CN105303222B - A kind of laser imaging antifalsification label and preparation method thereof - Google Patents
A kind of laser imaging antifalsification label and preparation method thereof Download PDFInfo
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- CN105303222B CN105303222B CN201510770189.7A CN201510770189A CN105303222B CN 105303222 B CN105303222 B CN 105303222B CN 201510770189 A CN201510770189 A CN 201510770189A CN 105303222 B CN105303222 B CN 105303222B
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Abstract
The present invention discloses a kind of laser-projection-type antifalsification label and preparation method thereof, belongs to optical anti-counterfeiting and micro-nano technology field.The label surface is the unordered nanometer-scale relief structure of single-layer or multi-layer, and anti-counterfeiting image can be presented upon laser irradiation.The label surface structure of the present invention becomes the phase modulating structure that anti-counterfeiting image of changing commanders is changed into label surface by area of computer aided optical design, using diffraction optics and Fourier Optics.Under conditions of identical incident light, different anti-counterfeiting images corresponds to different label surfaces.The preparation method of the label includes that optical graving prepares nickel template and nano impression prepares label for caster, plating.Laser-projection-type antifalsification label in the present invention, by common laser pen as identification of means, the anti_counterfeiting mark brightness that projects is big, visual impact is strong, is different from that common laser holographic label light variation image contrast is small, the characteristics of being difficult to differentiate, can effectively improve the anti-counterfeiting performance of label.
Description
Technical field
The invention belongs to optical anti-counterfeitings and micro-nano technology field, and in particular to diffraction optics designs and photoetching, reactive ion
The micro-nano manufacturing process such as etching, nano impression prepares the antifalsification label of laser projection micro nano structure.
Background technology
Anti-counterfeiting technology refers to the measure forged and taken in order to prevent, can accurately discern the false from the genuine in a certain range, and do not allow
The technology for being easily imitated and replicating.China is every year because loss reaches hundreds billion of RMB caused by counterfeit and shoddy goods.Strike is false
Low-quality goods is emitted, it is very urgent to improve anti-counterfeiting technology.With the appearance of digital scanning device and color printer, the anti-fake skill of tradition
The threshold that art is replicated and cracks is lower and lower, and there is an urgent need for the exploitation of antifalse technology, nanotechnology is anti-fake to be provided newly thus
Solution route.
The features such as optical anti-counterfeiting has visual impact strong, easy memory is more suitble to the public anti-fake.Optical anti-counterfeiting at present
The discriminating fashion that label is largely become using light, i.e., can be seen different images in different angle or color change, adopt more
Achieve the effect that discoloration with concave-convex optical grating construction or multilayer film system to distinguish the light of different-waveband in white light.Wherein with
Laser hologram label is most widely used.So far from nineteen sixty First laser invention, laser technology has been widely used work
Industry, the fields such as medicine, national defence and scientific research.The appearance of laser technology promotes the development of holography, and Benton is carried within 1969
Rainbow hologram art is gone out, has started the eighties to be widely used in the anti-fake of banknote, card, passport, security and social famous-brand and high-quality goods
It screens.Rainbow holography, which is the interference used up and diffraction principle, to be recorded before the certain wave of object and in the form of interference fringe
Come, with a kind of holography of white light reconstruction filtergram.Add slit in the appropriate location of light path when feature is record, when white light reconstruction
The reproduction image of object and slit changes because of the difference of wavelength, to can see that the picture of different colours in different location.First
For rainbow holography technology due to technological diffusion, anti-counterfeit capability is lost substantially, subsequently there are many follow-on holographic skills
Art, such as Computer Image Processing improve hologram, using the encrypted hologram picture of image coding encrypting technology.
It is anti-to have developed a set of laser micropore due to being used directly for processing with high-energy in anti-counterfeiting technology for laser beam
Pseudo- technology.I.e. under protective gas effect, micropore, group are burnt on label or paper using the laser pulse of high-strength high-density energy
Identifiable specific pattern is synthesized to reach antifalse effect.View mode, which is generally looked squarely, loses picture and text, visible to light to hide
Picture and text；Or head-up is dot matrix image, to visible multi-level image of light side view etc..It is still being widely used at present, especially in banknote
With card surface.
From the typical laser antifalsification technology of two above and the relevant technologies it is known that existing laser multi-purpose is schemed in record
As information or it is directly used in processing, still without using technology of the laser beam as anti false information carrier itself.It can produce at present sharp
There is the problem of hundreds of families, the diffusion and production management of technology in the manufacturer of light holographic anti-counterfeiting label so that some really identify and are not easy
The mark of identification, some emulation can mix the spurious with the genuine again.These greatly reduce the anti-counterfeiting performance of laser holographic anti counterfeiting label.Together
When, in the preparation process of label, how to reduce cost and obtain cheap finished product, determines that can the label expanded.
Invention content
Present invention aims at a kind of laser-projection-type antifalsification label is provided for anti-counterfeit field, pass through design surface medium
Laser beam can be changed into image by micro-structure, and can not observe directly any information in label surface.Meanwhile the present invention will
Integrated circuit technique, electroplating technology and nanometer embossing are combined, and provide a kind of preparation of the laser-projection-type antifalsification label
Method.
The technical solution adopted by the present invention is as follows：
A kind of laser-projection-type antifalsification label, the antifalsification label export anti-counterfeiting image, the anti-counterfeiting label under laser irradiation
The surface of label is mixed and disorderly unordered nanoscale medium micro-structure, which is two-dimensional plane phase modulated structure；Laser irradiation
Transmission or reflection and diffraction occur in the micro-structure, interfering cancellation and interference on far field perspective plane enhances, to defeated
Go out anti-counterfeiting image；When the anti-counterfeiting image of output is symmetric figure, the antifalsification label surface is that the complete unordered of single layer is floated
Micro-structure is carved, relief microstructure size is suitable with wavelength, and dominant bit phase etching depth is 2 π；When the anti-counterfeiting image of output is non-right
When claiming figure, the antifalsification label surface is the complete unordered relief microstructure of bilayer, and the phase difference between double-layer structure is
π。
A kind of preparation method of above-mentioned laser-projection-type antifalsification label, includes the following steps：
(1) optical design：By ray-tracing software, under the conditions of known incident light field and known output plane light field,
Calculate incident laser by intermediate optical elements surface parameter, number is passed through to the parameter on the intermediate optical elements surface of acquisition
According to the surface texture image for obtaining the antifalsification label after being handled with figure；
(2) caster makes：Lithography mask version is made in calculated surface texture image, uses projection lithography and reaction
Ion etching technology prepares micro-structure mother matrix on the silicon chip that spin coating has photoresist, and carries out release treatment to surface；
(3) nickel template construct is imprinted：Using caster, suppressed using nanometer embossing opposite with master mold harden structure
Macromolecule subtemplate, then metallic nickel is steamed as conductive layer using electron beam to subtemplate, it is obtained and master mold version using electroplating technology
Mutually isostructural metallic nickel template；
(4) label is processed：Transparent membrane is suppressed using metallic nickel template and nanometer embossing, obtains transmission-type anti-counterfeiting label
Label.
After the step (4) obtains transmission-type antifalsification label, reflected to obtain the final product in the back side evaporated metal layer of the antifalsification label
Formula antifalsification label.Preferably, the thickness of the metal layer is 100nm.
The depth of microstructure of the transmission-type antifalsification label is the π of Ф λ/2 (n1-n0), micro- knot of the reflective antifalsification label
Structure depth is the π of Ф λ/2 2n0, wherein Ф is position difference, λ is incident wavelength, n1For label material refractive index, n0For air refraction
Rate.
Further, the macromolecule submodule version in the step (3) uses PMMA, and the temperature of nano impression is 140 DEG C,
Pressure is 0.5Mpa；Heat-insulation pressure keeping 5min after nano impression, is cooled to room temperature.
Further, the transparent membrane of the step (4) uses PC materials, and the temperature of nano impression is 150 DEG C, pressure
For 0.5MPa；Heat-insulation pressure keeping 2min after nano impression, is cooled to room temperature.
Different from traditional Techniques of Optical Security, the present invention discharges anti-counterfeiting information by the way of laser projection, i.e., will swash
Light beam is changed into the carrier of anti-counterfeiting information, and laser is changed into image by the antifalsification label designed through the invention.The present invention's is anti-
Pseudo label is decomposed into mixed and disorderly, the unordered micro-structure of label surface by optical transform software operation, and no matter micro-structure is in macroscopic view
Or can not all analyze any information on microcosmic, effect be laser beam spot is scattered, diffraction and interference, final group
Synthesize security pattern.Micro-structure minimum dimension is suitable with optical wavelength, and constructional depth is more than optical wavelength, thus can not by photoetching and
Printing technique replicates.
The laser-projection-type antifalsification label of the present invention, by common laser pen as identification of means, what is projected is anti-fake
Icon brightness is big, visual impact is strong, is different from that common laser holographic label light variation image contrast is small, the characteristics of being difficult to differentiate,
The anti-counterfeiting performance of label can be effectively improved.The invention has the advantages that：
(1) antifalsification label surface is nanoscale medium micro-structure, has slight rainbow effect, surface beautiful under natural light
It sees.
(2) can be by transmission or reconstruction by reflection anti-counterfeiting information by laser irradiation, easy to operate, effect is intuitive, depending on
Feel that impact force is strong.It can reappearance anti-forge information using common laser pen.
(3) label surface medium micro-structure minimum dimension is hundred nano-scale, and constructional depth is up to micron order, complex-shaped nothing
Sequence, it is difficult to analyzed to crack.
(4) female stamp fabrication is combined using photoetching, reactive ion etching, nano impression and electroplating technology, and complex procedures relate to
And equipment is more, technology difficulty is big, it is possible to prevente effectively from being imitated, and ensures anti-counterfeiting performance.
(5) label production process uses nanometer embossing, and of low cost, efficient, yield is big, can reduce rapidly whole
The process costs of a label are easy to the marketing of product.
Description of the drawings
Fig. 1 is the surface texture schematic diagram of laser-projection-type antifalsification label of the present invention, and (a) is underlying structure surface, is (b)
Superstructure surface.
Fig. 2 is the two-layered medium micro-structure section schematic diagram of antifalsification label of the present invention, 1- superstructures, 2- understructures,
3- label support layers, 4- metallic reflectors.
Fig. 3 is the anti-counterfeiting information reproduction form of antifalsification label of the present invention, and (a) is that transmission-type label reproduces schematic diagram, is (b)
Reflective label reproduces schematic diagram；5- laser pens, 6- laser beams, 7- transmission-type labels, the reflective labels of 8-, 9- reproduce image.
Fig. 4 is mother matrix projection alignment schematic diagram and RIE process silicon face Morphology schematic diagrames, and (a) is to project for the first time
It exposes schematic diagram and RIE etches silicon result schematic diagram, be (b) that second of alignment exposes schematic diagram and RIE etches the signal of silicon result
Figure；10- ultraviolet systems, 11- carry the photo etched mask system of alignment, 12- projection scaling optical systems, 13- spin coating ultraviolet lights
The silicon substrate of photoresist, the master structure schematic diagram after 14- primary first-order equation ion etchings, carrying for 15- spin coating ultraviolet photoresists are single
The mother matrix of layer etching structure, the double-deck etching structure master structure schematic diagram after 16- secondary response ion etchings.
Fig. 5 is the preparation technology flow chart of laser-projection-type antifalsification label of the present invention.
Fig. 6 is optical Design schematic diagram, and 17- inputs the anti-counterfeiting image of computer, the first lens of 18-, and 19- is calculated
The diffraction element surface texture arrived, the second lens of 20-, 21- pass through the real image that diffraction element obtains.
Specific implementation mode
The present invention combines nanometer embossing to prepare the antifalsification label for anti-counterfeit field, table using diffraction optics design
Face is mixed and disorderly, unordered medium micro-structure, and anti-counterfeiting information can be released down in laser irradiation.
1, label surface Microstructure Optics design
Label surface micro-structure is calculated by optical design software.The optical field distribution of known incident light and wanted
The optical field distribution of the output plane reached, by the parameter for calculating intermediate optical elements so that incident light is after optical system
Optical field distribution meets design requirement.Design software mainly uses ray tracing, the design method then evaluated with transmission function.It obtains
The intermediate optical elements obtained are label surface microstructure graph.Since different output light fields needs different optical systems
System, therefore the antifalsification label of each different pattern corresponds to different surface micro-structures.
As shown in fig. 6, anti-counterfeiting image 17 is inputted in computer, input light is collimated monochromatic ligth, passes through the first lens 18
Diffraction element surface texture 19 can be obtained by carrying out inverse Fourier transform.By the second lens, to acquire monochromatic light logical for Fourier transformation again
Diffraction element is crossed in the optical field distribution on perspective plane, as laser pen passes through the image that is projected out after label surface.
As shown in Figure 1, when it is symmetric figure to export image, label surface is the complete micro- knot of unordered embossment of single layer
Structure, embossment structure depth play position phase adjustment effect, and dominant bit phase etching depth is 2 π.When output pattern be asymmetric image, by
There is positive and negative first-order diffraction in diffraction so single layer structure will produce two full symmetric in the original location images, it is therefore desirable in list
One layer of structure is added in layer structure again and introduces phase difference π increasing one image of removal, so asymmetric image label surface structure is more
For complexity.For transmission-type antifalsification label, light passes through the π of the phase difference Ф=2 (n in dielectric structure and air1-n0) d/ λ, it is micro-
Constructional depth is the π of Ф λ/2 (n1-n0), for reflective antifalsification label, light passes through phase difference Ф=2 in dielectric structure and air
πn02d/ λ, depth of microstructure are the π of Ф λ/2 2n0, wherein Ф is position difference, λ is incident wavelength, n1It is reflected for label material
Rate, n0Anti-counterfeiting information reproduction form for air refraction, two kinds of labels is as shown in Figure 3.
In the present embodiment, structure calculation is carried out to icon " nanoimprint " using virtuallab softwares, obtains bottom
Datagram and each one of upper layer data figure, each datagram correspond to actual size 512um*512um, and corresponding minimum dimension is
500nm.By datagram layout at 0.5cm*0.5cm datagrams are given, it is changed into the bitmap number that SF-100 maskless photoetching machines use
According to.The use of label material is PC refractive index 1.58, laser light source is 532nm wavelength, and label construction individual depths are 458nm, double
Layer depth is 916nm.
2, mastering
During development in laboratory, stepper is replaced using maskless photoetching machine (U.S. IMP company SF-100)
Carry out mastering.Preparation process is as shown in Figure 4 and Figure 5：
(1) the spin coating 600nm thickness BCI3511 ultraviolet photoresists on silicon chip, use maskless photoetching machine 20：1 scaling, carries out
First layer graph exposure obtains patterned photoetching offset plate figure using TMAH development 30s.
(2) use electron beam plated film instrument that 15nm chromium is deposited.Photoresist is lifted off using acetone ultrasound, obtains the micro-structure figure of chromium
Case.
(3) sample is put into inductively coupled plasma etching apparatus, uses CHF3/CF4/O2As etching gas, silicon is etched
Depth is 460nm.
Etching parameters：Reaction pressure 2pa, CF410sccm, CHF325sccm, O21.5sccm.Power coil power
30W, upper and lower power 45W, etch period 1600s.
(4) taking-up sample use washes chrome liquor and washes away chromium film, leaves the micro-structure of silicon.
(5) have first layer structure silicon chip on, then spin coating 600nm BCI-3511 photoresists, use no mask light
Quarter the second layer pattern of machine alignment, ensure overlay error be less than 500nm.
(6) step (3)-(5) are repeated, second layer micro-structure is obtained.Use acetone, isopropanol, deionization ultrasound clear successively
Wash silicon template.
(7) oxygen plasma treatment sample surfaces 1min is used, for 24 hours, the silicon for obtaining surface hydrophobicity is female for gaseous state release treatment
Version.Oxygen plasma parameter：Reaction pressure 2pa, O210sccm, power 30w.Time 60s.
3, prepared by subtemplate and nickel template
(1) it uses silicon mother matrix in nano marking press, 140 DEG C, the PMMA plates of 2mm thickness is imprinted under the conditions of 0.5MP, heat preservation is protected
5min is pressed, is cooled to room temperature, pressure is removed, obtains PMMA material subtemplates.
(2) use electron beam evaporation plating 80nm thickness nickel layer as the conductive layer of next step plating.
(3) subtemplate for having plated conductive layer is put into electroplating bath and is electroplated, obtain nickel mould identical with master structure
Plate.
Electroplating parameter：Nickel sulfamic acid 375g/L, nickel chloride 15g/L, boric acid 30-40g/L, lauryl sodium sulfate
0.5g/L.40-60 DEG C of temperature.pH4.0.Current density 1-2Adm-2..Electroplating time 3-5 hours.Nickel plate thickness 400-
600um。
4, prepared by label
(1) it uses nickel template in nano marking press, imprints the PC materials of 0.8mm thickness, 160 DEG C, 0.5MP pressure is kept the temperature
Pressurize 3min obtains transmission-type label.
(2) using the reverse side electron beam evaporation plating 100nm aluminium of clear label as reflecting layer, reflective label is obtained.
Claims (7)
1. a kind of laser-projection-type antifalsification label, the antifalsification label export anti-counterfeiting image under laser irradiation, which is characterized in that institute
The surface for stating antifalsification label is mixed and disorderly unordered nanoscale medium micro-structure, which is two-dimensional plane phase modulated structure；
Transmission or reflection and diffraction occur in the micro-structure for laser irradiation, interfere cancellation on far field perspective plane and interference increases
By force, to export anti-counterfeiting image；When the anti-counterfeiting image of output is symmetric figure, the antifalsification label surface is the complete of single layer
Unordered relief microstructure, relief microstructure size is suitable with wavelength, and dominant bit phase etching depth is 2 π；When the anti-fake figure of output
When as being asymmetrical graphic, the antifalsification label surface is double-deck complete unordered relief microstructure, between double-layer structure
Phase difference is π.
2. a kind of preparation method of laser-projection-type antifalsification label as described in claim 1, which is characterized in that including following step
Suddenly：
(1) optical design：By ray-tracing software, under the conditions of known incident light field and known output plane light field, calculate
Incident laser by intermediate optical elements surface parameter, to the parameter on the intermediate optical elements surface of acquisition by data and
The surface texture image of the antifalsification label is obtained after figure processing；
(2) caster makes：Lithography mask version is made in calculated surface texture image, uses projection lithography and reactive ion
Lithographic method prepares micro-structure mother matrix on the silicon chip that spin coating has photoresist, and carries out release treatment to surface；
(3) nickel template construct is imprinted：Using micro-structure mother matrix, suppressed and micro-structure master structure phase using nano-imprinting method
Anti- macromolecule subtemplate, then to subtemplate using electron beam steam metallic nickel be used as conductive layer, using electro-plating method acquisition with it is micro-
The mutually isostructural metallic nickel template of structure mother matrix；
(4) label is processed：Transparent membrane is suppressed using metallic nickel template and nano-imprinting method, obtains transmission-type antifalsification label.
3. preparation method according to claim 2, which is characterized in that after the step (4) obtains transmission-type antifalsification label,
The antifalsification label back side evaporated metal layer up to reflective antifalsification label.
4. preparation method according to claim 3, which is characterized in that the depth of microstructure of the transmission-type antifalsification label is
Фλ/2π(n1-n0), the depth of microstructure of the reflective antifalsification label is the π of Ф λ/2 2n0, wherein Ф be position difference, λ be into
Ejected wave length, n1For label material refractive index, n0For air refraction.
5. preparation method according to claim 3, which is characterized in that the thickness of the metal layer is 100nm.
6. the preparation method according to one of claim 2 to 5, which is characterized in that the macromolecule submodule in the step (3)
Version uses PMMA, and the temperature of nano impression is 140 DEG C, pressure 0.5Mpa；Heat-insulation pressure keeping 5min after nano impression, is cooled to
Room temperature.
7. the preparation method according to one of claim 2 to 5, which is characterized in that the transparent membrane of the step (4) uses
The temperature of PC materials, nano impression is 150 DEG C, pressure 0.5MPa；Heat-insulation pressure keeping 2min after nano impression, is cooled to room
Temperature.
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106054294A (en) * | 2016-04-29 | 2016-10-26 | 沈阳造币有限公司 | Metal coin or stamp with DOE (Diffraction Optical Element) anti-counterfeit pattern and manufacturing method thereof |
| CN107719851A (en) * | 2017-09-27 | 2018-02-23 | 中国科学院光电技术研究所 | One kind becomes pattern anti-fake relief type security devices |
| US11155113B2 (en) | 2017-11-03 | 2021-10-26 | Agency For Science, Technology And Research | Holographic security element and method of forming thereof |
| CN110315898B (en) * | 2019-07-03 | 2021-06-18 | 深圳市冠盟贴纸制品有限公司 | Manufacturing process of planar color three-dimensional relief and laser projection |
| CN111300963A (en) * | 2019-11-22 | 2020-06-19 | 珠海市瑞明科技有限公司 | Variable lattice holographic invisible pattern forming method |
| CN111751918A (en) * | 2020-06-17 | 2020-10-09 | 四川芯辰光微纳科技有限公司 | Microstructure diffraction slice and preparation thereof, and anti-counterfeiting device comprising microstructure diffraction slice |
| CN112590419A (en) * | 2020-11-24 | 2021-04-02 | 湖南大学 | Optical anti-counterfeiting mark with nano composite structure |
| CN112613591B (en) * | 2020-12-29 | 2024-04-09 | 苏州印象镭射科技有限公司 | Anti-counterfeiting label and preparation method thereof |
| CN114994937B (en) * | 2022-06-24 | 2024-01-12 | 山东泰宝信息科技集团有限公司 | Holographic anti-counterfeiting image manufacturing device and manufacturing method |
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