CN105280798B - Luminescent device - Google Patents

Luminescent device Download PDF

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Publication number
CN105280798B
CN105280798B CN201510284707.4A CN201510284707A CN105280798B CN 105280798 B CN105280798 B CN 105280798B CN 201510284707 A CN201510284707 A CN 201510284707A CN 105280798 B CN105280798 B CN 105280798B
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China
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pad
hole
luminescent device
component
layer
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CN201510284707.4A
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CN105280798A (en
Inventor
李建和
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Suzhou Lekin Semiconductor Co Ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Abstract

Luminescent device according to the present invention, including supporting member, with ontology, the first pad being separated from each other on the body and the second pad and at least one of hole in the body and recessed portion；Luminescence chip, third pad and the 4th pad with light emitting structure and below light emitting structure；And the stickup component between supporting member and luminescence chip, wherein third pad is electrically connected to the first pad, 4th pad is electrically connected to the second pad, light emitting structure includes the first conductive semiconductor layer, active layer and the second conductive semiconductor layer, and a part of stickup component is disposed at least one of hole and recessed portion.

Description

Luminescent device
Technical field
The present invention relates to luminescent device and with the lighting unit of the luminescent device.
Background technique
Luminescent device, such as light emitting diode (LED) is the semiconductor devices for converting electric energy to light, and as substitution The light source of new generation of conventional fluorescent lamps and glow lamp and be widely used.
Due to LED by using semiconductor devices generate light, so compared to by heating tungsten generate light glow lamp or By excitation ultraviolet light (generating by electrion), collide with fluorescent material generates the fluorescent lamp of light to person, the power consumption of LED It is low.
In addition, LED by using semiconductor devices potential difference generate light, therefore service life, response characteristic and Environmental-friendly requirement etc., compared with conventional lighting sources, LED is advantageous.
In this regard, various researchs is had been carried out to replace conventional lighting sources with LED.LED is increasingly being used as illuminating The light source of device, such as various lamps, liquid crystal display, electronic mark board and street lamp that indoor and outdoors use.
Summary of the invention
The present invention provides a kind of luminescent devices with new light scattering structure.
The present invention provides a kind of luminescent devices with new electric connection structure.
The present invention provides a kind of luminescent devices, and wherein luminescence chip is adhered to supporting member by membrane type stickup component.
The electric reliability of luminescent device and the lighting unit with the luminescent device can be improved in the present invention.
Luminescent device according to the present invention includes supporting member, which has ontology, is spaced each other on the body The first pad and the second pad opened and hole or recessed portion in ontology；Luminescence chip has light emitting structure and in light emitting structure The third pad of lower section and the 4th pad；And the stickup component between supporting member and luminescence chip, wherein third pad is electrically connected To the first pad, the 4th pad is electrically connected to the second pad, and light emitting structure includes the first conductive semiconductor layer (first conductive Semiconductor layer, such as the first conductive semiconductor layer), active layer and the second conductive semiconductor layer (second Conductive semiconductor layer, such as the second conductive semiconductor layer), and a part for pasting component is arranged In hole or recessed portion.
Detailed description of the invention
Fig. 1 is the sectional view for showing luminescent device according to first embodiment.
Fig. 2 is the exemplary plan view for showing the supporting member of luminescent device shown in Fig. 1.
Fig. 3 is the exemplary plan view for showing the luminescence chip of luminescent device shown in Fig. 1.
Fig. 4 is the view for showing the manufacturing process of luminescent device shown in Fig. 1.
Fig. 5 A is the sectional view for showing luminescent device according to the second embodiment.
Fig. 5 B is the exemplary plan view for showing supporting member shown in Fig. 5 A.
Fig. 6 is the sectional view for showing luminescent device according to the third embodiment.
Fig. 7 is the sectional view for showing the luminescent device according to fourth embodiment.
Fig. 8 is the sectional view for showing the luminescent device according to the 5th embodiment.
Fig. 9 is another the exemplary view for showing luminescent device shown in fig. 7.
Figure 10 is the sectional view for showing the luminescent device according to sixth embodiment.
Figure 11 is the view for showing the manufacturing process of luminescent device shown in Figure 10.
Figure 12 is the sectional view for showing the luminescent device according to the 7th embodiment.
Figure 13 is the sectional view for showing the luminescent device according to the 8th embodiment.
Figure 14 is the sectional view for showing the luminescent device according to the 9th embodiment.
Figure 15 is the sectional view for showing the luminescent device according to the tenth embodiment.
Figure 16 is for explaining during manufacturing luminescent device, and when supporting member does not have hole, each region is glued Paste the view of the thickness change of component.
Figure 17 and 18 is to use the supporting substrate of the pressing member with mutually different shape for explaining according to embodiment Luminescence chip and pad pressing process view.
Figure 19 is the sectional view for showing the luminescent device according to the 11st embodiment.
Figure 20 is the sectional view for showing the luminescent device according to the 12nd embodiment.
Specific embodiment
In the description of the present invention, it should be appreciated that when layer (or film), region, pattern or structure be referred to as another substrate, When another layer (or film), another region, another pad or another pattern " on " or " under ", can be " directly " or " Ground connection " is on another substrate, layer (or film), region, pad or pattern, or there may also be one or more intervening layers. The position of such layer has been described with reference to the accompanying drawings.In addition, identical appended drawing reference will refer to identical element in figure.
It reference will now be made in detail to the luminescent device that attached drawing describes embodiment according to the present invention below.
Fig. 1 is the sectional view for showing the luminescent device of first embodiment according to the present invention, and Fig. 2 is to show institute in Fig. 1 The exemplary plan view of the supporting member of the luminescent device shown, and Fig. 3 is the luminescence chip for showing luminescent device shown in Fig. 1 Plan view.
Referring to figs. 1 to Fig. 3, luminescent device 100 includes supporting member 110, the luminescence chip 120 on supporting member 110 And the stickup component 150 between supporting member 110 and luminescence chip 120.
Supporting member 110 may include ontology 111, such as conductive body (conductive body, such as conductive sheet Body).Conductive body 111 may include silicon, and p-type impurity or n-type impurity can be doped in conductive body 111.Another In a example, ontology 111 may include insulating body 111.For example, since ontology 111 is made of the silicon with high thermal conductivity, because This heat generated by luminescence chip 120 that can effectively dissipate.Supporting member 110 can have at 180 μm to 210 μ ms Thickness.If the thickness of supporting member 110 is less than above range, supporting member 110 is not useable for supporting, and the effect that radiates Rate may be lowered.If the thickness of supporting member 10 exceeds above range, the thickness of device may be increased.Due to support The radiating efficiency of component 10 can be improved, therefore the luminescence chip 120 with the output of large area height can be used.
As illustrated in fig. 1 and 2, supporting member 110 may include recessed portion, which had both been recessed in supporting member 10 Portion.Recessed portion can be various forms, and hole including complete penetration supporting member 110 is partially formed in supporting member 110 Recess portion or gap, the storage unit being formed in a part of supporting member 110 or chamber and the table for being formed in supporting member 110 Channel or groove on face.In the embodiment of the present invention shown in Fig. 1 and 2, recessed portion is the form in multiple holes 11 and 13.Cause This, supporting member 110 includes multiple holes 11 and 13 and pad 115 and 117.When supporting member 110 includes conductive body 111, Protective layer 113 can be disposed between pad 115,117 and conductive body 111.Protective layer 113 can be disposed in conduction originally On the surface of body 111 and extend to hole 11 and 13.Protective layer 113 may include insulating materials (for example, silicon oxide layer or nitridation Silicon layer) and single-layer or multi-layer can be prepared as.
Hole 11 and 13 may include the first hole 11 and the second hole 13 for being spaced apart with the first hole 11.One the first hole 11 or Multiple first holes 11 can be formed in conductive body 111.One the second hole 13 or multiple second holes 13 can be formed on In conductive body 111.Protective layer 113 extends to the first hole 11 and the second hole 13.First hole 11 and the second hole 13 can be Vertical direction is Chong Die with luminescence chip 120.First hole 11 and the second hole 13 can shining in vertical direction and luminescence chip 120 Structure 125 is overlapped.First hole 11 and the second hole 13 can be in the vertical direction not marginal portions with the substrate 121 of luminescence chip 120 Overlapping.
Supporting member 110 may include the first pad 115 and the second pad 117 for being spaced apart with the first pad 115.First pad 115 may include the first contact portion being arranged on the top surface (or first surface towards luminescence chip 120) of ontology 111 51, the first connecting portion 53 being formed in the first hole 11 and be arranged on the bottom surface (or second surface) of ontology 111 first Bonding part 55.First contact portion 51 can extend to the top surface of ontology 111 from the inside in the first hole 11, and the first bonding part 55 can To extend to the bottom surface of ontology 111 from the inside in the first hole 11.First connecting portion 53 can be disposed in anti-in the first hole 11 On sheath 113.First hole 11 may include open area, be formed and passing vertically through the inside of supporting member 110.Hole 11 Include the conductor formed on the inside of first surface, second surface and hole 11 and 13 with 13, with formed from first surface to The electrical connection of second surface.
Second pad 117 may include the second contact portion 71 being arranged on the top surface of ontology 111, be formed in the second hole 13 Second connecting portion 73 and the second bonding part 75 for being arranged on the bottom surface of ontology 111.Second contact portion 71 can be from second The inside in hole 13 extends to the top surface of ontology 111, and the second bonding part 75 can extend to ontology 111 from the inside in the second hole 13 Bottom surface.Second connecting portion 73 can be disposed between the second hole 13 and protective layer 113.Second hole 13 may include open zone Domain, the developing zone are formed and passing vertically through the inside of supporting member 110.
First hole 11 and the second hole 13 are with the top and bottom for leaving ontology 111 and closer to the center side of ontology 111 To width can become narrow gradually.Ontology 111 is centrally disposed between the top and bottom of ontology 111.First hole 11 and second The upper width in hole 13 can be greater than the width of the central area of ontology 111.The lower width in the first hole 11 and the second hole 13 can be big Width in the central area of ontology 111.When viewed from the top, the first hole 11 and the second hole 13 can have as shown in Figure 2 Polygonal shape.In another example, the first hole 11 and the second hole 13 can have circular shape or oval shape.Another In one example, the first hole 11 and the second hole 13 can from upper part to lower part width having the same.Therefore, when observation Fig. 1's When side view, part is most narrow therebetween for hole 11 and hole 13, but such structure is not required, and hole 11 and 13 can push up End, the either end of bottom end are most narrow at this both ends.In an embodiment of the present invention, the inner wall formed on hole 11 and 13 It can be protruding portion or rough surface that the surface of inner vertical walls extends.
First pad 115 and the second pad 117 can be made of metal-containing material.For example, the first pad 115 and the second pad 117 can To include at least one of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P and their alloy, and can be with single-layer or multi-layer Form preparation.
Luminescence chip 120 is disposed on supporting member 110, and may include having multiple semiconductor layers and multiple pads 145,147 light emitting structure 125.Semiconductor layer can realize by using II race to VI compound semiconductor, for example, Group III-V compound semiconductor or II-VI group compound semiconductor.Pad 145 and 147 can be operatively connected to light emitting structure 125 semiconductor layer, to power.
Light emitting structure 125 may include the first conductive semiconductor layer 122, active layer 123 and the second conductive semiconductor layer 124.First conductive semiconductor layer 122 may include doped with first conduction dopant (first conductive dopant, Such as first conductive dopant) Group III-V compound semiconductor, such as from GaN, AlN, AlGaN, InGaN, InN, One of selection in group composed by InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP.If first Conduction type (first conducive type, such as the first conduction type) is n-type semiconductor, then the first conduction dopant can To include n-type dopant, such as Si, Ge, Sn, Se or Te.First conductive semiconductor layer 122 can be prepared as single-layer or multi-layer, The present embodiment is without being limited thereto.
Active layer 123 is disposed in the lower section of the first conductive semiconductor layer 122, and can have single quantum, more One of quantum well structure, quantum-dot structure and quantum cable architecture.Active layer 123 can be by using iii-v chemical combination Object semiconductor is formed in trap/barrier layer circulation (cycle).For example, active layer 123 can be formed on InGaN/GaN, In the circulation of InGaN/InGaN, InGaN/InAlGaN or InGaN/AlGaN.Conduct coating (conductive clad Layer, such as conductive cladding) side above and/or under active layer 123 can be formed in.Conducting coating can be by AlGaN semiconductor structure At.Second conductive semiconductor layer 124 is disposed under active layer 123, and may include doped with the second conduction dopant The Group III-V compound semiconductor of (second conductive dopant, such as the second conductive dopant), for example, from GaN, Group composed by AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP One of middle selection.If the second conduction type (second conducive type, such as the second conduction type) is p-type half Conductor, then the second conduction dopant may include p-type dopant, such as Mg or Ze.Second conductive semiconductor layer 124 can be produced For single-layer or multi-layer, and the present embodiment is without being limited thereto.
For example, due to the stacked structure of semiconductor layer, light emitting structure 125 can have NP junction structure, PN connected structure, At least one of NPN junction structure and positive-negative-positive structure.
As shown in figures 1 and 3, the pad 145 and 147 of luminescence chip 120 may include below luminescence chip 120 each other Third pad 145 and the 4th pad 147 spaced apart.Third pad 145 is electrically connected to the second conductive semiconductor layer 124, and the 4th pads 147 are electrically connected to the first conductive semiconductor layer 122.When viewing from the bottom, third pad 145 and the 4th pad 147 can have Polygonal shape.For example, third pad 145 and the 4th pad 147 can have shape corresponding with the first pad 115 and the second pad 117 Shape.The floor space of third pad 145 and the 4th pad 147 can correspond to the top surface size of the first pad 115 and the second pad 117.
Luminescence chip 120 may include substrate 121.Substrate 121 is disposed on light emitting structure 125.For example, substrate 121 It can be transparent substrate, insulating substrate or electrically-conductive backing plate.That is, substrate 121 may include transparent substrate, insulating substrate Or electrically-conductive backing plate.Substrate 121 may include from Al2O3、GaN、SiC、ZnO、Si、GaP、InP、Ga2O3And GaAs is formed Group in select one of.Substrate 121 can be growth (growth) substrate.
Luminescence chip 120 may include the buffer layer and non-impurity-doped semiconductor layer between substrate 121 and light emitting structure 125 At least one of.The lattice mismatch that buffer layer can decay between substrate 121 and semiconductor layer, and II can be used by selection Race is formed to VI compound semiconductor.Non-impurity-doped Group III-V compound semiconductor can be additionally formed below buffer layer Layer, but the present embodiment is without being limited thereto.
Luminescence chip 120 may include electrode layer 141 and 142, articulamentum 143 and be arranged in below light emitting structure 125 Insulating layer 131 and 133.Electrode layer 141 and 142 is formed as single-layer or multi-layer, and can serve as current spreading layer.For example, If electrode layer 141 and 142 is formed as multilayer, electrode layer 141 and 142 may include being arranged in 125 lower section of light emitting structure First electrode layer 141 and the second electrode lay 142 for being arranged in 141 lower section of first electrode layer.
Mutually different material can be used to be formed in first electrode layer 141 and the second electrode lay 142.First electrode layer 141 can be formed by transparent material, such as metal oxide or metal nitride.For example, first electrode layer 141 may include from ITO (indium tin oxide), ITON (ITO nitride), IZO (indium-zinc oxide), IZON (IZO nitride), IZTO (zinc indium tin oxygen Compound), IAZO (aluminium indium zinc oxide), IGZO (indium gallium zinc oxide), IGTO (gallium indium tin oxide), AZO (Zinc-aluminium), One of selection in group composed by ATO (tin-antimony oxide) and GZO (gallium zinc oxide).The second electrode lay 142 and first The bottom surface of electrode layer 141 contacts, and serves as reflection electrode layer.The second electrode lay 142 may include the height with 80% or more The metal of reflectivity, such as AG, Au or Al.When first electrode layer 141 has open area, the second electrode lay 142 can be with Bottom surface (for example, bottom surface of the second conductive semiconductor layer 124) part of light emitting structure 125 contacts.
In another example, electrode layer 141 and 142 can be with ODR (omnibearing reflector layer) build stack.ODR structure Can have stacked structure, the stacked structure include have low-refraction first electrode layer 141 and with first electrode layer 141 Contact and the second electrode lay 142 with high refractive metal material.For example, electrode layer 141 and 142 can have the heap of ITO/Ag Stack structure.Therefore, the comprehensive angle of reflection at the interface between first electrode layer 141 and the second electrode lay 142 can be changed It is kind.
According to another example, it is convenient to omit the second electrode lay 142 and can be formed with special-shaped (hetero) material Reflecting layer.Reflecting layer, which can have, to be alternately arranged two DBR with mutually different index dielectric (distribution bragg is anti- Emitter) structure.For example, two dielectric layers can respectively selectively include SiO2Layer, Si3N4Layer, TiO2Layer, Al2O3Layer and One of MgO layer and different another one.In another example, electrode layer 141 and 142 or reflecting layer can include simultaneously Both dbr structure and ODR structure.In this case, luminescence chip 120 can have 98% or more light reflection.
Articulamentum 143 is disposed in 142 lower section of the second electrode lay, and electric with first electrode layer 141 and the second electrode lay 142 Insulation.For example, articulamentum 143 may include metal, which includes in Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag and P At least one.Third pad 145 and the 4th pad 147 are disposed in 143 lower section of articulamentum.Insulating layer 131 and 133 can be with blocking electrode Undesirable contact between layer 141 and 142, articulamentum 143, third pad 145 and the 4th pad 147 and light emitting structure 125.Insulation Layer 131 and 133 may include the first insulating layer 131 and second insulating layer 133.First insulating layer 131 can be disposed in connection Between layer 143 and the second electrode lay 142.Second insulating layer 133 can be disposed in articulamentum 143 and third pad 145 and Between four pads 147.Third pad 145 and the 4th pad 147 may include material identical with the first pad 115 and the second pad 117.
Articulamentum 143 is connected to the first conductive semiconductor layer 122.A part 144 of articulamentum 143 passes through electrode layer 141 and 142 and light emitting structure 125 in the through-hole structure that is formed contacted with the first conductive semiconductor layer 122.First insulating layer 131 extend to the periphery of the part 144, with blocking electrode layer 141 and 142, the second conductive semiconductor layer 124 and active layer Undesirable contact between 123.The part 144 of articulamentum 143 can be towards the protruding portion outstanding of substrate 121, and can One or more protruding portions are arranged.
Below second insulating layer 133, third pad 145 passes through the open area and first electrode layer of second insulating layer 133 The connection of at least one of 141 and the second electrode lay 142 or contact.Below second insulating layer 133, the 4th pad 147 passes through the The open area of two insulating layers 133 is connected to articulamentum 143.Therefore, the protruding portion 146 of third pad 145 can pass through electrode layer 141 and 142 are electrically connected to the second conductive semiconductor layer 124, and the protruding portion 148 of the 4th pad 147 can pass through 143 quilt of articulamentum It is electrically connected to the first conductive semiconductor layer 122.
Third pad 145 and the 4th pad 147 are separated from each other below luminescence chip 120, and towards supporting member 110 First pad 115 and the second pad 117.
Since a part 134 of second insulating layer 133 is formed in the side of the light emitting structure 125 of luminescence chip 120, so It can protect the outside of light emitting structure 125.In addition, the perimeter of the first conductive semiconductor layer 122 of light emitting structure 125 can be with With hierarchic structure A1, wherein the bottom width of the first conductive semiconductor layer 122 is narrower than top surface width.
Pasting component 150 may include conductive membranes, for example, heat conducting film.Heat conducting film may include (including poly- pair of polyester resin Ethylene terephthalate, polybutylene terephthalate (PBT), polyethylene naphthalate and poly- naphthalenedicarboxylic acid butanediol Ester), polyimide resin, acrylic resin, styrene base resin (styrene-based resin) (including polystyrene or Acrylonitrile), polycarbonate resin, at least one of polylactic resin and polyurethane resin.Moreover, heat conducting film may include Polyolefin resin (including polyethylene, polypropylene or ethylene-propylene copolymer), vinyl (including polyvinyl chloride or gather inclined two Vinyl chloride), polyamide, alum base resin, polyether-ether-ketone base resin (polyether-ether ketone-based Resin), at least one of aryl resin and the mixing of above-mentioned resin.For example, pasting component 150 may include poly- to benzene Naphthalate (PET) film.Binding compositions can be applied to paste the two sides of component 150, but the present embodiment is not It is limited to this.
Pasting component 150 has in 2 μm of thickness to 25 μ ms.The a part 152 for pasting component 150 is disposed in the One pad 115, the second pad 117,145 to the 4th pad 147 of third pad region in, and protective layer 113 and second insulating layer 133 it Between bond.Paste component 150 perimeter be disposed on the outer top surface of supporting member 110, and can vertical direction with The top surface of first conductive semiconductor layer 122 is overlapped.Paste component 150 perimeter can be disposed in vertical direction not with have The equitant region of active layer 123.
Pasting component 150 may include 151 He of protruding portion being arranged at least one of the first hole 11 and the second hole 13 153.For example, protruding portion 151 and 153 is respectively disposed in the first hole 11 and the second hole 13.Protruding portion 151 and 153 can have There are the length or height of the height or depth less than the first hole 11 and the second hole 13.Protruding portion 151 and 153, which can have, is less than branch Support the height of the thickness of component 150.The protruding portion 151 and 153 being arranged in the first hole 11 and the second hole 13 can be with luminous core The third pad 145 of piece 120 and the contact of the 4th pad 147.Protruding portion 151 and 153 can be mutually Chong Die with luminescence chip 120 in vertical direction It is folded.The width that protruding portion 151 and 153 can be configured to upper area is more wider than the width of lower region thereof, but the present embodiment It is without being limited thereto.Protruding portion 151 and 153 can be separated from each other in supporting member 110.
Adhesive layer can be arranged between the first pad 115 and third pad 145 and the second pad 117 and the 4th pad 147 it Between region in.Adhesive layer may include Au/Sn, Ni/Cu, Pb/Sn, Au/Ge, Au/Sn/Ge, Au/Pb/Sn and Cu/Pb/ Sn。
The exterior section for pasting component 150 is arranged in outside the side of light emitting structure 125.Paste the exterior section of component 150 It can be disposed in except third pad 145 and the 4th pad 147.The top surface for pasting the exterior section of component 150 can compare light-emitting junction The bottom surface of structure 125 is low.The exterior section for pasting component 150 can overlap in the exterior section of vertical direction and substrate 121.Thoroughly Bright layer, which can be disposed in, to be pasted between the exterior section of component 150 and the top surface of the first conductive semiconductor layer 122, and hyaline layer It may include air or resin material.Hyaline layer can have the thickness bigger than the thickness of active layer 123.
The supporting member 110 and hair of the ontology 111 with silicon materials are bonded to according to the stickup component 150 of the present embodiment Between optical chip 120, and heat conduction member can be served as, so as to effectively transmit or dissipation luminescence chip 120 is generated Heat.
In addition, luminescence chip 120 can penetrate the surface of substrate 121 and the side emitting of illuminated component 125, so as to Improve light extraction efficiency.Moreover, because without reflector around luminescence chip 120, so can be shone with wide orientation angle.
According to the present embodiment, the base area of luminescence chip 120 can be narrower than the top surface area of supporting member 110.In addition, Settable space in supporting member, to allow to paste the partial movement in supporting member 110 of component 150 during adhesion process. Moreover, in supporting member 110, for adhesion process, in the first pad 115, the second pad 117, third pad 145 and the 4th pad 147 Perimeter at can for paste 150 installation space of component.
In this case, luminescence chip 120 can be directly bonded on supporting member 110, to simplify adhesion process. In addition, the radiating efficiency of luminescence chip 120 can be enhanced, so as to effectively utilize luminescence chip in illumination field 120。
The manufacturing process of luminescent device is described hereinafter with reference to Fig. 4.It pastes component 150 and is disposed in supporting member 110 After upper, make luminescence chip 120 towards 110 heat pressing of supporting member.As a result, as shown in Figure 1, the third pad of luminescence chip 120 145 and the 4th pad 147 contacted with the first pad 115 of supporting member 110 and the second pad 117, and the third pad of luminescence chip 120 145 and the 4th pad 147 be thermally bonded to the first pad 115 and the second pad 117 of supporting member 110.In this case, when from The interface between interface and the second pad 117 and the 4th pad 147 between one pad 115 and third pad 145 pushes away stickup component When 150, the movement of component 150 is pasted, to make to paste the first hole 11 and the second hole 13 that component 150 is introduced into supporting member 110. In addition, a part for pasting component 150 is moved between the perimeter and pad 115,117,145 and 147 of luminescence chip 120 Region.Solidify when pasting component 150, the stickup component 150 being arranged in the first hole 11 and the second hole 13 of supporting member 110 Protruding portion can be formed.
The thickness range that component 150 is pasted before pressing process is 20 μm to 25 μm, and is pressed after process from pad 115, the boundary between 117,145 and 147 is removed completely.In this case, in the area of neighbouring pad 115,117,145 and 147 It needs at domain for receiving the space for pasting component 150.If during hot pressing process, in neighbouring pad 115,117,145 and 147 Region at be not used to paste the space of component 150, then paste component 150 cannot completely from pad 115,117,145 and 147 it Between interface remove.In this case, the interface between pad 115,117,145 and 147 may occur not exclusively to connect Touching causes electrical contact to be failed.According to the present embodiment, hole 11 and 13 correspond to neighbouring pad 115,117,145 and 147 or with pad 115, 117, the formation of stickup component 150 at the region of 145 and 147 overlappings, to allow hole 11 and 13 in the heat for pasting component 150 The reception space for pasting component 150 is served as during pressing process.Supporting member 110 can be moved by pasting a part of of component 150 Space between luminescence chip or perimeter.
When pasting the solidification of component 150, luminescence chip 120 is adhered to supporting member 110, therefore luminescence chip 120 can To be cut into Package size or light emitting module can be used for.Although 120 quilt of luminescence chip has been described in embodiment It is mounted on supporting member 110, but can be set on supporting member 110 at least two and be separated from each other the shining of preset distance Chip 120.
Fig. 5 A is the sectional view for showing luminescent device according to the second embodiment, and Fig. 5 B is shown shown in Fig. 5 A The exemplary plan view of supporting member.In the description of following figure 5 A and Fig. 5 B, first will be incorporated to by quoting same parts Implement.
With reference to Fig. 5 A, luminescent device includes supporting member 110, the luminescence chip 120 on supporting member 110 and is propping up Support the stickup component 150 between component 110 and luminescence chip 120.
As fig. 5 a and fig. 5b, the first recess portion 118 can be formed at least the one of neighbouring first hole 11 and the second hole 13 The upper part of supporting member 110 at a region, and the first recess portion 118 is from the top surface of ontology 111 to lower recess.Protective layer 113 can form in the first recess portion 118, and the present embodiment is without being limited thereto.First recess portion 118 can be disposed in supporting member Between 110 the first pad 115 and the second pad 117.First recess portion 118 can be arranged in proximity to the first contact of the first pad 115 At least one of portion 51 and the second contact portion 71 of the second pad 117.In addition, the first contact portion 51 of the first pad 115 and At least one of second contact portion 71 of second pad 117 extends to the table of the protective layer 113 formed in the first recess portion 118 Face.As shown in Figure 5A, the upper width of the first recess portion 118 is than the gap between the first contact portion 51 and the second contact portion 71 It is narrow.As shown in Figure 5 B, the length of the first recess portion 118 can be shorter or long than the length of the first contact portion 51 and the second contact portion 71. With reference to Fig. 5 B, the width direction of the first recess portion 118 can be transverse direction, and the length direction of the first recess portion 118 can be it is vertical To direction.
According to another example, the first recess portion 118 can be located elsewhere.For example, the first recess portion 118 can be located at the Between one pad 115 and the top edge of supporting member 110 or between the second pad 117 and the top edge of supporting member 110. Multiple first recess portions 118 can be arranged around the first pad 115 and the second pad 117, and the present embodiment is without being limited thereto.Paste component The first recess portion 118 can be inserted in 150 a part 152, but the present embodiment is without being limited thereto.It is pressed when pasting component 150 by heat When, one or more first recess portions 118 are arranged around the first pad 115 and the second pad 117, thus during hot pressing process with Stickup component 150 it is mobile, pasting component 150 can be usefully received in the first recess portion 118.
First recess portion 118 can have the depth smaller than the thickness of ontology 111.The bottom of first recess portion 118 can be located at Bottom surface than protruding portion 151 and 153 is low.
Fig. 6 is the sectional view for showing luminescent device according to the third embodiment.In the description of following figure 6, it will pass through It quotes identical component and is incorporated to the description of Fig. 1, Fig. 5 A and Fig. 5 B.
With reference to Fig. 6, luminescent device includes supporting member 110, the luminescence chip 120 on supporting member 110 and is propping up Support the stickup component 150 between component 110 and luminescence chip 120.
Supporting member 110 includes the first recess portion 118 formed in ontology 111, and luminescence chip 120 includes to substrate The second recess portion 128 that 121 top surface or light emitting structure 125 are recessed.First recess portion 118 can be in vertical direction and the second recess portion 128 overlappings.In another example, the first recess portion 118 can be deviated from the second recess portion 128 along the vertical direction, or vertical Direction does not overlap with the second recess portion 128.
One or more second recess portions 128 can be disposed in luminescence chip 120 the first pad 115 and the second pad 117 it Between region.Second recess portion 128 can be configured to the exposing depth of corresponding first insulating layer 131.In another example, Two recess portions 128 can be configured at least one of corresponding the second electrode lay 142, articulamentum 143 and first insulating layer 131 Expose depth.That is, the second recess portion 128 can be configured to corresponding the second electrode lay 142, articulamentum 143 or first absolutely Exposing depth of the edge layer 131 away from second insulating layer 133.Second recess portion 128 can pass through a part of the first insulating layer 131, Two insulating layers 133 and articulamentum 143 are formed.The part 152A for pasting component 110 can be disposed in 128 He of the second recess portion In first recess portion 118.
Second recess portion 128 can have the predetermined depth from the bottom surface of second insulating layer 133, and the depth of the second recess portion 128 Degree can be lower than the depth of the first recess portion 118.
The first recess portion 118 and the second recess portion 128 can be filled by pasting component 150.For example, when being arranged in luminescence chip 120 When stickup component 150 between supporting member 110 is pressed, it is mobile and then fill the first recess portion 118 and the to paste component 150 Two recess portions 128.
Fig. 7 is the sectional view for showing the luminescent device according to fourth embodiment.In the description of following figure 7, it will pass through Quote the description that identical component is incorporated to Fig. 1.
With reference to Fig. 7, luminescent device includes supporting member 110, the luminescence chip 120 on supporting member 110 and is propping up Support the stickup component 150 between component 110 and luminescence chip 120.
The exterior section 155 for pasting component 150 can extend outside light emitting structure 125.Paste the exterior section of component 150 155 can contact with the part 134 of the second insulating layer 133 for the outer surface for being arranged in light emitting structure 125.Paste component 150 The top surface of exterior section 155 can be located at it is lower than the top surface of the first conductive semiconductor layer 122, than the first conductive semiconductor layer 122 The high position in bottom surface.The part 134 of the exterior section 155 and second insulating layer 133 of pasting component 150 can be deposited on hair On the outer surface of photo structure 125, to prevent the outer surface of moisture infiltration light emitting structure 125.In another example, Ke Yiyi Except the part 134 of the second insulating layer 133 for the outer surface for being arranged in light emitting structure 125.In this case, component 150 is pasted Exterior section 155 can be adhered to the outer surface of light emitting structure 125, that is to say, that the second conductive semiconductor layer 124 has The outer surface of active layer 123 and the first conductive semiconductor layer 122.
According to fourth embodiment, pasting component 150 can be bonded between luminescence chip 120 and supporting member 110, and The exterior section 155 for pasting component 150 can be bonded between the perimeter and supporting member of luminescence chip 120.Due to It pastes component 150 and fills the perimeter of luminescence chip 120, therefore can prevent from pasting component 150 to 110 evagination of supporting member Out.
Fig. 8 is the sectional view for showing the luminescent device according to the 5th embodiment.In the description of following figure 8, it will pass through Quote the description that identical component is incorporated to Fig. 7.
With reference to Fig. 8, luminescent device includes supporting member 110, the luminescence chip 120 on supporting member 110 and is propping up Support the stickup component 150 between component 110 and luminescence chip 120.
Luminescence chip 120 may include light emitting structure 125 and substrate 121, and coarse patterns 121A can be formed in substrate On 121 top surface.Coarse patterns 121A can change the critical angle that light passes through substrate 121, so as to improve light extraction efficiency.
Resin layer 180 can be formed on substrate 121.Resin layer 180 can be prepared as single-layer or multi-layer.Resin layer 180 It may include the phosphor for changing the wavelength for the light that luminescence chip 120 issues.Resin layer 180 may include the transparent of not impurity Layer (such as phosphor), or can have the stacked structure of hyaline layer and phosphor layer.
Lens with curvature can be coupled on resin layer, but the present embodiment is not limited thereto.
Fig. 9 is another embodiment for showing luminescent device shown in fig. 7.
With reference to Fig. 9, luminescent device includes supporting member 110, the luminescence chip 120 on supporting member 110 and is propping up Support the stickup component 150 between component 110 and luminescence chip 120.
Luminescence chip 120 can be obtained by removing the substrate 121 formed on the light emitting structure 125 of Fig. 7.Substrate 121 can remove by physical schemes or chemistry protocols.For example, substrate 121 can be by irradiating laser beam or passing through execution Wet etching removes.
When substrate 121 is removed, the surface of light emitting structure 125, the i.e. top of the first conductive semiconductor layer 122 can be exposed Face.The top surface of first conductive semiconductor layer 122 can be formed with coarse patterns, but the present embodiment is not limited thereto.Another In a example, buffer layer or undoped semiconductor layer can be exposed in the region for removing substrate 121.Buffer layer or undoped half Conductor layer can be disposed on light emitting structure 125.
Transparent resin layer 180 can be disposed on light emitting structure 125.Transparent resin layer 180 can be prepared as single layer or Multilayer, and if necessary may include phosphor.In addition, the lens with curvature are coupled on resin layer 180, but this reality Example is applied to be not limited thereto.
Figure 10 is the sectional view for showing the luminescent device according to sixth embodiment.In the description of following figure 10, it will lead to The identical component crossed in reference Figure 10 is incorporated to the structure of luminescence chip 120 and supporting member 110 shown in FIG. 1.
With reference to Figure 10, luminescent device includes supporting member 110, the luminescence chip 120 on supporting member 110 and is propping up Support the stickup component 160 between component 110 and luminescence chip 120.
Supporting member 110 may include ontology 111, protective layer 113 and the first pad 115 and the second pad 117.
Luminescence chip 120 may include substrate 121, light emitting structure 125, electrode layer 141 and 142, insulating layer 131 and 132, Articulamentum 143 and third pad 145 and the 4th pad 147.
Pasting component 160 may include conductive membranes, such as conductive film.Conductive membranes may include at least one in insulating film A conductive particles (conductive particle) 61.Conductive particles 61, for example, may include in metal, metal alloy and carbon At least one.Conductive particles 61 may include at least one of Ni, Ag, Au, Al, Cr, Cu and C.Conductive particles 61 can be with Including anisotropic conductive film or anisotropic conductive adhesive.
It will be described with reference to Figure 11 the adhesion process for pasting component 160 later.Stickup component 160 can be disposed in luminous Between chip 120 and supporting member 110, hot pressing process is then executed.Therefore, the conductive particles 61 of conductive membranes are distributed on branch Between the first pad 115 and the second pad 117 and the third pad 145 and the 4th pad 147 of luminescence chip 120 for supportting component 110.Conduction Particle 61 is contacted with the first pad 115 and third pad 145 and the second pad 117 and the 4th pad 147.Therefore, the first pad 115 and third Pad 145 is connected to each other by conductive particles 61, and the second pad 117 and the 4th pad 14 are connected to each other by conductive particles 61.Due to Conductive particles 61 are distributed in mutually different region, therefore electricity will not occur relative to pad 115,117,145 and 147 and do It disturbs.
Component 160 is pasted to be bonded between luminescence chip 120 and supporting member 110.Due to pasting component 160, shine Chip 120 can be separated with supporting member 110 with 2 μm or smaller minimum interval.Between first pad 115 and third pad 145 Interval and the second pad 117 and the 4th pad 147 between interval be smaller than the diameter of conductive particles 61 (for example, 2 μm or more It is small).
Pasting component 160 includes 161 He of protruding portion being arranged at least one of the first hole 11 and the second hole 13 163.For example, protruding portion 161 and 163 is respectively disposed in the first hole 11 and the second hole 13.Protruding portion 161 and 163 can have There is the length smaller than the height in the first hole 11 and the second hole 13.161 He of protruding portion being arranged in the first hole 11 and the second hole 13 163 can contact with the third pad 145 of luminescence chip 120 and the 4th pad 147.Protruding portion 161 and 163 can vertical direction with Luminescence chip 120 overlaps.Protruding portion 161 and 163 can overlap in vertical direction and third pad 145 and the 4th pad 147.It is prominent Out portion 161 and 163 can be configured to upper area width it is more wider than lower region thereof, but the present embodiment is not limited to This.Protruding portion 161 and 163 can be separated from each other in supporting member 110.
The exterior section for pasting component 160 may be arranged on the outside of the side of light emitting structure 125.Paste the outside of component 160 Part can be disposed in the outside of third pad 145 and the 4th pad 147.The top surface for pasting the exterior section of component 160 can compare The bottom surface of light emitting structure 125 is low.The exterior section for pasting component 160 can be in the exterior section phase of vertical direction and substrate 121 Overlapping.
According to the present embodiment, the support structure that component 160 is connected and is bonded in the ontology 111 with silicon materials is pasted in conduction Between part 110 and luminescence chip 120, so that the thermal energy generated of luminescence chip 120 is effectively spread or dissipates.
It as shown in Figure 10 and Figure 11, can be towards support structure after stickup component 160 is disposed on supporting member 110 Part 110 presses luminescence chip 120.As a result, conductive particles 61 are disposed in the first pad 115 and the second pad 117 of supporting member 110 Between and the third pad 145 and the 4th pad 147 of luminescence chip 120 between, so that supporting member 110 be allow to be adhered to hair Optical chip 120.In this case, when from the interface and the second pad 117 and between the first pad 115 and third pad 145 When interface between four pads 147 pushes away stickup component 160, it is mobile to paste component 160, so that stickup component 160 be made partially to be drawn Enter the first hole 11 and the second hole 13.In addition, paste component 160 be moved into luminescence chip 120 perimeter and pad 115, 117, the region between 145 and 147.When pasting component 160 and solidifying, be arranged in supporting member 110 the of component 160 is pasted Part in one hole 11 and the second hole 13 can form protruding portion.Later, luminescent device can be cut into Package size or can To be used for the light emitting module with one or at least two luminescence chips 120.
Component 160 is pasted before pressing process to be had in 20 μm of thickness to 25 μ ms, and after pressing process The part for pasting component 160 is removed completely from the interface between pad 115,117,145 and 147.In this case, exist The region of neighbouring pad 115,117,145 and 147 is needed for receiving the space for pasting component 160.
According to the present embodiment, in the neighbouring or Chong Die region of pad 115 and 117 with supporting member 110 of supporting member 110 Hole 11 and 13 is formed, so that serving as hole 11 and 13 during the hot pressing process for pasting component 160 pastes component 160 Reception space.Therefore, the gap between pad 115,117,145 and 147 can be narrower.Pasting a part of of component 160 can move Enter the space between the perimeter of supporting member 110 and luminescence chip or luminescence chip 120.
When pasting the solidification of component 150, luminescence chip 120 is adhered to supporting member 110.At this moment, corresponding pad 115, 117, the interval between 145 and 147 can be less than 4 μm or can be in 2 μm to 3 μm of range.That is to say, it is padded with corresponding 115, the conductive particles 61 of 117,145 and 147 contacts can have diameter of the range at 2 μm to 3 μm.Before pressing process, Conductive particles 61 can have diameter of the range at 4 μm to 6 μm.That is to say, not with corresponding pad 115,117,145 and 147 The conductive particles 61 of contact can have diameter of the range at 4 μm to 6 μm.The thickness for pasting another region of component 160 can be with Equal to or more than 15 μm or equal to or more than 20 μm.
Figure 12 is the sectional view for showing the luminescent device according to the 7th embodiment.In the description of following figure 12, it will lead to It crosses and quotes the description that identical component is incorporated to Figure 10.
With reference to Figure 12, luminescent device includes supporting member 110, the luminescence chip 120 on supporting member 110 and is propping up Support the stickup component 160 between component 110 and luminescence chip 120.
Pasting component 160 may include conductive film.For example, pasting component 160 may include with insulating resin and addition To the film of the conductive particles 61 of insulating resin.
First recess portion 118 is formed in the upper part of supporting member 110.For example, supporting member 110 may include first Recess below region between pad 115 and the second pad 117 is lower than the first recess portion 118 of the top surface of ontology 111.First recess portion 118 can increase the reception at the region between the first pad 115 and third pad 145 and between the second pad 117 and the 4th pad 147 Space.Therefore, when pasting the movement of component 160, a part 162 for pasting component 160 fills the first recess portion 118.In addition, second A part of insulating layer 133 is open at the region below luminescence chip 120, so as to expose articulamentum 143, but this reality Example is applied to be not limited thereto.The open area of second insulating layer 133 can serve as paste component 160 part 162 fill Recess portion.In another example, a part of of articulamentum 143 can be in the regional opening below luminescence chip 120, to be formed such as Second recess portion 128 shown in Fig. 6.
Figure 13 is the sectional view for showing the luminescent device according to the 8th embodiment.In the description of following figure 13, it will lead to It crosses and quotes the description that identical component is incorporated to Figure 10.
With reference to Figure 13, the exterior section 165 for pasting component 160 can extend to outside light emitting structure 125.For example, pasting structure The exterior section 165 of part 160 extends to the second conductive semiconductor layer 124, active layer 123 and the first conductive semiconductor layer 122 outer surface.Therefore, the exterior section 165 for pasting component 160 can protect the outer surface of light emitting structure 125.If shone The outer surface of structure 125 does not have second insulating layer 133, then the exterior section 165 for pasting component 160 can be with light emitting structure 125 Appearance face contact.
According to the present embodiment, the recess area with hierarchic structure is disposed in the perimeter of light emitting structure 125, therefore The exterior section 165 for pasting component 160 can be received in recess area.It therefore, can when pasting component 160 by heat pressing It is more protruded outward with preventing from pasting component 160 than the side of supporting member.In addition, due to paste component 160 be disposed in it is luminous The outer surface of structure 125, therefore prevent moisture from penetrating into light emitting structure 125.
Figure 14 is another example of Figure 13.With reference to Figure 14, coarse patterns 121A can be formed in the base of luminescence chip 120 The top surface of plate 121 is to extract light.The light extraction efficiency through substrate 121 can be improved in coarse patterns 121A.Resin layer 180 can be with It is formed on substrate 121.Resin layer 180 can be prepared as single-layer or multi-layer.Resin layer 180 may include impurity (such as phosphorescence Body).Lens with curvature can be coupled on resin layer 180.
Figure 15 is another example of Figure 13.With reference to Figure 15, substrate can be removed from the luminescence chip 120 of luminescent device 121, and semiconductor layer can luminescence chip 120 top surface expose.Semiconductor layer can be light emitting structure 125, for example, the first conduction Semiconductor layer 122.Semiconductor layer can be buffer layer or undoped semiconductor layer, but the present embodiment is not limited thereto.Tree Rouge layer 180 or coarse patterns can be formed on light emitting structure 125.
Meanwhile for receiving the reception space for pasting component 150 or 160 in the supporting member 110 according to the present embodiment Volume setting is as follows.Reception space is arranged in luminescence chip 120 or supporting member 110, with receive paste component 150 or 160, and can be limited by the first hole 11 and the second hole 13 or the first recess portion 118 and the second recess portion 128.Reception space can be with With the volume for being enough to allow to paste the movement of component 150 or 160.When luminescence chip 120 has the size of 1mm x 1mm, connect The volume and the ratio between the first pad 115 or the top surface area of the second pad 117 for receiving space can be in the ranges of 380:1 to 420:1.Separately Outside, the volume of reception space and the ratio between the first pad 115 and the top surface area summation of the second pad 117 can be in 190:1 to 210:1's Range.The volume in hole 11 and 13 can be set into and the top surface area of the first pad 115 of supporting member 110 and the second pad 117 Predetermined magnifying power is proportional.
Table 1 shows the volume of the reception space of supporting member 110 and the top surface area of the first pad 115 and the second pad 117. In this case, supporting member 110 can have thickness of the range at 180 μm to 210 μm, and paste before pressing process The thickness of component 150 or 160 changes to 30 μm from 10 μm.
Table 1
Reception space volume (μm3) First pad top surface area (μm2) Second pad top surface area (μm2)
8,000,000 20000 20000
9,000,000 22500 22500
10,000,000 25000 25000
11,000,000 27500 27500
12,000,000 30000 30000
13,000,000 32500 32500
14,000,000 35000 35000
15,000,000 37500 37500
16,000,000 40000 40000
17,000,000 42500 42500
18,000,000 45000 45000
19,000,000 47500 47500
20,000,000 50000 50000
21,000,000 52500 52500
22,000,000 55000 55000
23,000,000 57500 57500
24,000,000 60000 60000
25,000,000 62500 62500
26,000,000 65000 65000
27,000,000 67500 67500
28,000,000 70000 70000
It, can be by considering the first pad 115 when the resin for pasting component 150 or 160 is moved due to hot pressing process The thickness that component 150 or 160 is pasted with the area of the second pad 117 and before hot pressing process carrys out the body of providing holes 11 and 13 Product.If the volume in hole 11 and 13 is less than above range or hole 11 and 13 is omitted, it is arranged in the first pad 115 and third pad The conductive particles 61 of the stickup component 160 in the region between 145 and between the second pad 117 and the 4th pad 147 can not be pressed. For example, as shown in figure 16, thickness T1, T2, T3 and the T4 for pasting component 150 or 160 can be from the edge Ps of luminescence chip 120 It is gradually increased to center Po, as indicated by region B1, B2, B3 and B4.Because having for pasting the movement of component 150 or 160 Space, so the edge Ps for pasting component 150 or 160 can be thinning, and because of the sky not moved for pasting component 150 or 160 Between, so the center Po for pasting component 150 or 160 is thicker than fringe region B1.If the thickness T4 of center Po becomes than pasting structure The diameters of the conductive particles 61 of part 160 is thick, as shown in figure 11, then can stop between the first pad 115 and third pad 145 and the Electrical connection between two pads 117 and the 4th pad 147.In addition, if the thickness T4 of center Po becomes thicker, it is shown in FIG. 1 viscous Patch component 150 may remain in the area between the first pad 115 and third pad 145 and between the second pad 117 and the 4th pad 147 Domain, so not contacted between the first pad 115 and third pad 145 and between the second pad 117 and the 4th pad 147.At another In example, when the first hole 11 and the second hole 13 and the first recess portion 118 are arranged in supporting member 110 simultaneously, it is contemplated that The volume of first recess portion 118, can reduce the volume in hole 11 and 13.
In the supporting member 110 according to the present embodiment, reception space (such as hole 11 and 13, the first recess portion 118 or the second Recess portion 128) it is arranged on the region neighbouring or Chong Die with the first pad 115 and the second pad 117, so that with during hot pressing process The movement of component 150 or 160 is pasted, pasting component 150 or 160 can be received in reception space.In this case, hole 11 With 13 in the stickup component 150 or 160 filled can form protruding portion, and between the first pad 115 and third pad 145 and It may be implemented to be electrically connected between two pads 117 and the 4th pad 147.
Figure 17 is another the exemplary view for the manufacturing process for showing luminescent device.
With reference to Figure 17, paste component 150 or 160 be disposed in supporting member 110 and luminescent device luminescence chip 120 it Between.
Pasting component 150 or 160 may include conductive adhesive film or electrical isolation adhesive film.
The first pad 115 and the second pad 117 of supporting member 110 may include have convex top surface warp architecture 51A and 71A.The third pad 145 and the 4th pad 147 of luminescence chip 120 may include the warp architecture R1 and R2 with lower convex bottom face.The One pad 115, the second pad 117, third pad 145 and the 4th pad and 147 can have semi-tubular cross-section.
When pasting component 150 or 160 and being pressed by luminescence chip 120 to the heat of supporting member 110, the of luminescence chip 120 Three pads 145 and the 4th pad 147 can be connect due to warp architecture 51A and 71A with the first pad 115 of supporting member 110 and the second pad 117 Touching, or contacted with conductive particles 61 as shown in Figure 10.That is to say, due to the warp architecture 51A/R1 that corresponds to each other and 71A/R2, pasting component 150 or 160 can effectively be pressed.Then, the first pad 115 and third pad 145 and the second pad 117 and the 4th pad 147 can be bonded to each other, or can by pass through paste component 150 or 160 with conductive particles 61 bond. The bottom surface of first pad 115 and third pad 145 and the second pad 117 and the 4th pad 147 can have warp architecture 51A and 71A with And R1 and R2, or can have flat structures, but the present embodiment is not limited thereto.
Figure 18 shows another embodiment of luminescent device.
With reference to Figure 18, the first pad 115 and the second pad 117 of supporting member 110 may include the protrusion with convex top surface Portion 51B and 71B, and the third pad 145 of luminescence chip 120 and the 4th pad 147 may include the protruding portion R3 with lower convex bottom face And R4.Each pad 115,117,145 and 147 can have multiple protruding portion 51B and 71B and R3 and R4, but the present embodiment It is not limited thereto.Protruding portion 51B and 71B and R3 and R4 can have triangle or multi-sided cross-sectional shape.It is bonding At later, the bottom surface and third pad 145 of the first pad 115 and the second pad 117 and the bottom surface of the 4th pad 147 can have protruding portion The shape of 51B and 71B and R3 and R4, or can have even shape, but the present embodiment is not limited thereto.
Figure 19 is the sectional view for showing the luminescent device according to the 11st embodiment.
With reference to Figure 19, multiple luminescence chips 120 can be arranged on supporting member 110, and according to the viscous of the present embodiment Patch component 150 can be disposed between supporting member 110 and each luminescence chip 120.The a part for pasting component 150 can be with It protrudes into the hole of supporting member 110.In other examples, pasting component 150 may include the conductive membranes with conductive particles.
Figure 20 is the sectional view for showing the luminescent device according to the 12nd embodiment.It, will in the description of following figure 20 It is incorporated by reference into previous description.
With reference to Figure 20, supporting member 110 includes ontology 111, such as conductive body.Conductive body 111 may include silicon, and And p-type impurity or n-type impurity can be formed in wherein.One or more extrinsic regions 91 and 92, such as p-type and n Type extrinsic region can be formed in ontology.The property of can choose of extrinsic region 91 and 92 it is connected to the of supporting member 110 One pad 115 and the second pad 117.Extrinsic region 91 and 92 may be implemented as the device with p-n junction region and p-n-p tie region Part.The device can serve as example diode, TFT, zener diode, bridge diode, chip driver (IC driver) or The component of resistor.Such device may be implemented as circuit, to control one or more operations of luminescent device.
In addition, in supporting member 110, extrinsic region 91 and 92 can be arranged in be spaced apart with luminescence chip 120 The low portion of ontology 111, or it is arranged in the upper part of the ontology 111 of neighbouring luminescence chip 120.
The embodiment provides the luminescent devices with radiating structure.The embodiment provides tools There is the luminescent device of novel electric connection structure.According to an embodiment of the invention, luminescence chip can be bonded by pasting component Onto supporting member.According to an embodiment of the invention, supporting member can be electrically connected to luminous by using component is pasted Chip.According to an embodiment of the invention, luminescent device and the lighting unit with the luminescent device can have it is improved can By property.
It can be set on a printed circuit board (pcb) according to multiple luminescent devices of above-described embodiment, for use in photograph Bright system, such as light emitting module or lighting unit.In light emitting module, luminescent device is arranged on PCB and (can be with circuit The substrate of layer) on.Lighting unit may include according to the light guide plate of the light emission side of the luminescent device of the present embodiment, diffusion sheet and At least one of prismatic lens.Lighting system may include headlamp, signal lamp, the headlight of vehicle or electronic mark board.
" one embodiment ", " embodiment ", " exemplary embodiment " mentioned in this specification etc. mean association Specific features, structure or characteristic described in embodiment are included at least one embodiment of the invention.In the description These terms occurred everywhere are not necessarily referring to identical embodiment.In addition, when being associated with any embodiment to specific features, structure Or characteristic is when being described, it is believed that is associated with other embodiments in the cognition of those skilled in the art to make these features, structure Or characteristic effect.
Although referring to multiple exemplary embodiments, present invention is described, it should be understood that, art technology Personnel can design many other changes and embodiment in the spirit and scope for falling into the principle of the present invention.More specifically, In specification, attached drawing and the scope of the appended claims, the various modifications of components and/or arrangement to theme combination arrangement It is possible with change.Other than modification and change to components and/or arrangement, being replaced also will be to those skilled in the art Member is obvious.

Claims (21)

1. a kind of luminescent device, comprising:
Supporting member, with ontology, the first pad being separated from each other on the body and the second pad and in the ontology Recessed portion；
Luminescence chip, third pad and the 4th pad with light emitting structure and below the light emitting structure；And
Component is pasted, between the supporting member and the luminescence chip,
Wherein the third pad on the luminescence chip is electrically connected to the first pad of the supporting member,
The 4th pad on the luminescence chip is electrically connected to the second pad of the supporting member,
The light emitting structure includes the first conductive semiconductor layer, active layer and the second conductive semiconductor layer, and
Described a part for pasting component is disposed in the recessed portion,
Wherein the recessed portion includes the second surface institute that the ontology is passed through from the first surface of the ontology to the ontology The hole of formation, the first surface are the surfaces towards the luminescence chip,
Wherein the stickup component includes the protruding portion extending into the hole,
Wherein the hole includes multiple holes, and first hole in the multiple hole and the third pad of the luminescence chip are be overlapped vertically, and And second hole in the multiple hole and the 4th pad of the luminescence chip are vertical Chong Die,
Wherein the protruding portion, which is disposed in each hole in first hole and second hole and has, is less than described first The height of the depth in hole and second hole,
Wherein first hole and second hole are to be formed by open area by the inside of the supporting member vertically,
Wherein the lower width in first hole and second hole is greater than first hole and second hole in the ontology The width of central area.
2. luminescent device according to claim 1, wherein the width in first hole and the second hole is into the ontology Heart district domain gradually becomes narrower than the top and bottom of the ontology.
3. luminescent device according to claim 1 or 2, wherein the recessed portion includes on the first surface of the ontology The concave portion of formation.
4. luminescent device according to claim 2, wherein the hole be included in the first surface, the second surface with And the conductor that the inside in the hole is formed, to be formed from the first surface to the electrical connection of the second surface.
5. luminescent device according to claim 3, wherein the hole be included in the first surface, the second surface with And the conductor that the inside in the hole is formed, to be formed from the first surface to the electrical connection of the second surface.
6. luminescent device according to claim 1 or 2, wherein the exterior section of the light emitting structure includes hierarchic structure,
The exterior section of first conductive semiconductor layer is disposed in the hierarchic structure, and is glued in vertical direction with described The perimeter overlapping of component is pasted,
Wherein the exterior section for pasting component is arranged in the exterior section of the light emitting structure.
7. luminescent device according to claim 1 or 2, wherein first pad includes the first contact on the body It portion, the first bonding part below the ontology and is arranged in first hole so that first contact portion is connected to institute The first connecting portion of the first bonding part is stated, and
Second pad includes the second contact portion on the body, the second bonding part below the ontology and arrangement So that second contact portion is connected to the second connecting portion of second bonding part in second hole.
8. luminescent device according to claim 7, wherein the stickup component includes insulating film,
First pad contacts the third pad, and
Second pad contact the 4th pad.
9. luminescent device according to claim 7, wherein the stickup component includes the insulating film with conductive particles, with And
The conductive particles are arranged in region between first pad and third pad and second pad and the 4th pad Between region.
10. luminescent device according to claim 9, wherein conductive particles contact first pad and third pad and Second pad and the 4th pad.
11. luminescent device according to claim 8, wherein the recessed portion includes being arranged in first pad and the second pad Between region recess portion, and be recessed to the depth of the first surface lower than the ontology, and
Described a part for pasting component is disposed in the recess portion.
12. luminescent device according to claim 1 or 2, wherein the luminescence chip is included in below the light emitting structure First electrode layer；
The second electrode lay is arranged in below the first electrode layer with reflected light；
First insulating layer, below the second electrode lay；
Articulamentum is arranged in below first insulating layer and is connected to first conductive semiconductor layer；And
Second insulating layer, below the articulamentum,
The third pad is connected to the second electrode lay by the second insulating layer, and
4th pad is connected to the articulamentum by the second insulating layer.
13. luminescent device according to claim 12, wherein the luminescence chip includes recess portion, the recess portion is arranged in neighbour The region of the nearly third pad and the 4th pad, and recessed expose the articulamentum, described first absolutely from the second insulating layer The depth of at least one of edge layer and the second electrode lay, and
Described a part for pasting component is disposed in the recess portion.
14. luminescent device according to claim 12, wherein the exterior section for pasting component is arranged in the hair The outer surface of photo structure, and
Wherein it is described paste component the exterior section top surface be located at it is lower than the top surface of first conductive semiconductor layer and The position higher than the bottom surface of first conductive semiconductor layer.
15. luminescent device according to claim 14, wherein the second insulating layer extends to the outer of the stickup component In region between portion part and the outer surface of the light emitting structure.
16. luminescent device according to claim 12, further include transparent substrate on the light emitting structure, resin layer with And at least one of lens.
17. luminescent device according to claim 12, wherein the supporting member includes be arranged in conductive material described Protective layer between ontology and first pad and the second pad, and
The ontology of conductive material includes the silicon with extrinsic region different from each other.
18. luminescent device according to claim 9, wherein the recessed portion includes recess portion, the recess portion is arranged in described Region between first pad and the second pad, and it is recessed to the depth of the first surface lower than the ontology, and
Described a part for pasting component is disposed in the recess portion.
19. luminescent device according to claim 9, wherein the luminescence chip includes below the light emitting structure One electrode layer；
The second electrode lay is arranged in below the first electrode layer with reflected light；
First insulating layer, below the second electrode lay；
Articulamentum is arranged in below first insulating layer and is connected to first conductive semiconductor layer；And
Second insulating layer, below the articulamentum,
The third pad is connected to the second electrode lay by the second insulating layer,
4th pad is connected to the articulamentum by the second insulating layer,
Wherein the luminescence chip includes recess portion, and the recess portion is arranged in the region of the neighbouring third pad and the 4th pad, and It is recessed to be exposed in the articulamentum, first insulating layer and the second electrode lay with having from the second insulating layer The depth of at least one,
Described a part for pasting component is disposed in the recess portion, and
Wherein the exterior section for pasting component is arranged in the outer surface of the light emitting structure.
20. luminescent device according to claim 1 or 2, wherein reception space volume (μm3) with it is described first pad or institute State the second pad top surface area (μm2) the ratio between 380:1 to 420:1 range,
Wherein the reception space is arranged in the supporting member, to receive the stickup component and including first hole With the second hole.
21. luminescent device according to claim 1 or 2, wherein the exterior section of the light emitting structure includes hierarchic structure, And
The exterior section of first conductive semiconductor layer is disposed in the hierarchic structure, and is glued in vertical direction with described The perimeter overlapping of component is pasted,
Wherein the exterior section for pasting component extends outside the light emitting structure, and be arranged in the outer of the light emitting structure A part contact of the second insulating layer on surface.
CN201510284707.4A 2014-05-28 2015-05-28 Luminescent device Active CN105280798B (en)

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Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104081547A (en) * 2012-02-15 2014-10-01 松下电器产业株式会社 Light emitting apparatus and method for manufacturing same
JP7011148B2 (en) * 2016-04-01 2022-01-26 日亜化学工業株式会社 A method for manufacturing a light emitting element mounting substrate and a method for manufacturing a light emitting device using the same, and a light emitting element mounting substrate and a light emitting device using the same.
US10644210B2 (en) * 2016-04-01 2020-05-05 Nichia Corporation Method of manufacturing light emitting element mounting base member, method of manufacturing light emitting device using the light emitting element mounting base member, light emitting element mounting base member, and light emitting device using the light emitting element mounting base member
KR102455096B1 (en) * 2016-10-11 2022-10-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device and light emitting device package
KR101743022B1 (en) * 2016-10-31 2017-06-02 신화인터텍 주식회사 Heat radiation sheet and method for manufacturing of the same
KR102356216B1 (en) * 2017-05-30 2022-01-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light unit
KR102473399B1 (en) * 2017-06-26 2022-12-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light unit
KR102432216B1 (en) * 2017-07-11 2022-08-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package
US10497846B2 (en) * 2017-07-11 2019-12-03 Lg Innotek Co., Ltd. Light emitting device package
US10497827B2 (en) * 2017-07-21 2019-12-03 Lg Innotek Co., Ltd. Light emitting device package
DE102017117165B4 (en) * 2017-07-28 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Electronic component and method for manufacturing an electronic component
KR102393035B1 (en) * 2017-09-01 2022-05-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package
KR102393666B1 (en) * 2017-09-01 2022-05-03 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package
KR102401824B1 (en) * 2017-09-01 2022-05-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package
KR102455086B1 (en) * 2017-09-12 2022-10-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light emitting apparatus
JP2020533778A (en) * 2017-09-12 2020-11-19 エルジー イノテック カンパニー リミテッド Light emitting element package
KR102401826B1 (en) * 2017-09-15 2022-05-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and lighting apparatus
CN107818931B (en) * 2017-09-30 2021-10-19 厦门市三安光电科技有限公司 Transfer method and transfer device for semiconductor micro-component
DE102017123773B4 (en) * 2017-10-12 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Display element and display device
KR102426118B1 (en) * 2017-10-13 2022-07-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light source unit
KR102433841B1 (en) * 2017-10-20 2022-08-18 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package
WO2019088701A1 (en) 2017-11-01 2019-05-09 엘지이노텍 주식회사 Light-emitting device package and light source apparatus
KR102426833B1 (en) * 2017-11-01 2022-07-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light unit
KR102509064B1 (en) * 2017-11-03 2023-03-10 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and lighting apparatus
KR102471688B1 (en) * 2017-11-10 2022-11-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package, lighting device and method of manufacturing the same
KR102486038B1 (en) * 2017-12-01 2023-01-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package
KR102455087B1 (en) * 2017-12-11 2022-10-14 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light unit
KR102413223B1 (en) * 2017-12-19 2022-06-24 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package
KR102539278B1 (en) * 2018-01-12 2023-06-05 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package
KR102595927B1 (en) * 2018-04-11 2023-10-30 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package, manufacturing method thereof and light source unit
US11699688B2 (en) * 2019-12-03 2023-07-11 Nichia Corporation Surface-emitting light source and method of manufacturing the same
JP2023524892A (en) * 2020-05-15 2023-06-13 ルミレッズ リミテッド ライアビリティ カンパニー A light-emitting device that can set the spatial distribution of radiant intensity
TWI752707B (en) 2020-11-03 2022-01-11 財團法人工業技術研究院 Substrate with through via and method of fabricating the same
KR102571257B1 (en) * 2021-06-11 2023-08-25 주식회사 로티 Organic Light Emitting Diode for Illumination And Method Form Manufacturing The Same
CN115000270B (en) * 2022-06-16 2023-12-01 惠州华星光电显示有限公司 Light source module and display device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020020927A1 (en) * 1999-09-02 2002-02-21 Salman Akram Apparatus and methods of testing and assembling bumped devices using an anisotropically conductive layer
CN1340857A (en) * 2000-08-31 2002-03-20 株式会社日立制作所 Electronic device and method for manufacturing this device
CN1768434A (en) * 2003-03-28 2006-05-03 吉尔科有限公司 LED power package
US20080308314A1 (en) * 2007-06-18 2008-12-18 Elpida Memory, Inc. Implementation structure of semiconductor package
US20110169034A1 (en) * 2007-10-24 2011-07-14 Advanced Optoelectronic Technology, Inc. Package structure of photoelectronic device and fabricating method thereof
CN102263194A (en) * 2011-04-13 2011-11-30 日月光半导体制造股份有限公司 Semiconductor packaging and method for manufacturing same
DE102010033868A1 (en) * 2010-08-10 2012-02-16 Osram Opto Semiconductors Gmbh Chip carrier, electronic component with chip carrier and method for producing a chip carrier
EP2555254A2 (en) * 2011-08-04 2013-02-06 Creotecc GmbH Flat roof installation system for photovoltaic modules
CN203277380U (en) * 2012-05-29 2013-11-06 璨圆光电股份有限公司 Light-emitting component and light-emitting device thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06166210A (en) * 1992-11-30 1994-06-14 Oki Electric Ind Co Ltd Optical print head mounting structure
JP4211210B2 (en) 2000-09-08 2009-01-21 日本電気株式会社 Capacitor, mounting structure thereof, manufacturing method thereof, semiconductor device and manufacturing method thereof
JP4304717B2 (en) * 2003-06-26 2009-07-29 日本電気株式会社 Optical module and manufacturing method thereof
TWI246783B (en) 2003-09-24 2006-01-01 Matsushita Electric Works Ltd Light-emitting device and its manufacturing method
KR100854328B1 (en) * 2006-07-07 2008-08-28 엘지전자 주식회사 LED package and method for making the same
DE102007019776A1 (en) * 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing a plurality of optoelectronic components
KR20100038937A (en) 2008-10-07 2010-04-15 삼성엘이디 주식회사 Light emitting deving package
KR101092097B1 (en) 2009-08-31 2011-12-12 엘지이노텍 주식회사 Light emitting diode package and facbrication method thereof
US8400064B2 (en) 2009-09-09 2013-03-19 Koninklijke Philips Electronics N.V. Zener diode protection network in submount for LEDs connected in series
JP5659519B2 (en) * 2009-11-19 2015-01-28 豊田合成株式会社 Light emitting device, method for manufacturing light emitting device, method for mounting light emitting device, and light source device
KR101372084B1 (en) 2010-06-29 2014-03-07 쿨레지 라이팅 인크. Electronic devices with yielding substrates
JP5670250B2 (en) * 2011-04-18 2015-02-18 イビデン株式会社 LED substrate, light emitting module, device having light emitting module, method for manufacturing LED substrate, method for manufacturing light emitting module, and method for manufacturing device having light emitting module
CN104428912A (en) * 2012-06-26 2015-03-18 株式会社村田制作所 Mounting board and light-emitting device
US9337405B2 (en) 2012-08-31 2016-05-10 Nichia Corporation Light emitting device and method for manufacturing the same
KR102077232B1 (en) * 2013-03-07 2020-02-13 삼성전자주식회사 Lighting device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020020927A1 (en) * 1999-09-02 2002-02-21 Salman Akram Apparatus and methods of testing and assembling bumped devices using an anisotropically conductive layer
CN1340857A (en) * 2000-08-31 2002-03-20 株式会社日立制作所 Electronic device and method for manufacturing this device
CN1768434A (en) * 2003-03-28 2006-05-03 吉尔科有限公司 LED power package
US20080308314A1 (en) * 2007-06-18 2008-12-18 Elpida Memory, Inc. Implementation structure of semiconductor package
US20110169034A1 (en) * 2007-10-24 2011-07-14 Advanced Optoelectronic Technology, Inc. Package structure of photoelectronic device and fabricating method thereof
DE102010033868A1 (en) * 2010-08-10 2012-02-16 Osram Opto Semiconductors Gmbh Chip carrier, electronic component with chip carrier and method for producing a chip carrier
CN102263194A (en) * 2011-04-13 2011-11-30 日月光半导体制造股份有限公司 Semiconductor packaging and method for manufacturing same
EP2555254A2 (en) * 2011-08-04 2013-02-06 Creotecc GmbH Flat roof installation system for photovoltaic modules
CN203277380U (en) * 2012-05-29 2013-11-06 璨圆光电股份有限公司 Light-emitting component and light-emitting device thereof

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EP2950359B1 (en) 2022-10-19
JP6496601B2 (en) 2019-04-03
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CN105280798A (en) 2016-01-27
US20150349223A1 (en) 2015-12-03
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JP2015226056A (en) 2015-12-14
EP2950359A1 (en) 2015-12-02

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