CN105261582B - A kind of wafer angle calibration method - Google Patents
A kind of wafer angle calibration method Download PDFInfo
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- CN105261582B CN105261582B CN201410314289.4A CN201410314289A CN105261582B CN 105261582 B CN105261582 B CN 105261582B CN 201410314289 A CN201410314289 A CN 201410314289A CN 105261582 B CN105261582 B CN 105261582B
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Abstract
The present invention provides a kind of wafer angle calibration method, including at least following steps：S1：Choose a chip to be measured；S2：Ion implanting is carried out to the chip to be measured；S3：The parameter value on the symmetrical at least parameter value of 2 row points of X-axis and on the symmetrical at least two row point of Y-axis on the chip to be measured is measured, wherein, often include at least two measuring points in row point and each column point；S4：The angle [alpha] that the chip to be measured deflects around Y-axis is determined according to the average value difference on the chip to be measured measured on the symmetrical at least parameter value of 2 row points of X-axis；The average value difference for arranging the parameter values put on Y-axis symmetrical at least two according to measuring determines the angle beta that the chip to be measured deflects around X-axis；S5：Angle calibration system is carried out to the chip to be measured according to the angle [alpha] and the angle beta.The wafer angle calibration method of the present invention only needs a wafer, can not only reduce cost, can also improve the accuracy of wafer angle measurement result.
Description
Technical field
The invention belongs to field of semiconductor manufacture, the wafer angle calibration method being related in a kind of ion implanting engineering.
Background technology
To adsorb chip, platen is fixed on and can moved up and down and can platen (Platen) device of ion implantation apparatus
With on the cylindrical object of left-right rotation.Chip can be swung up and down on platen around fixing axle.So noted in ion beam
Chip left and right and can be swung up and down simultaneously when entering, and then realize that ion beam carries out ion implanting at an angle.
Non-zero angle injection is that very important one of pocket (Pocket) injection technology requires, the accuracy of implant angle
Most important, the deviation of any angle can all make the dosage of target location that drift or the depth injected generation deviation occur,
These deviations are fatal to the lethality of the WAT/CP parameters of chip.Sum it up, implant angle is in IC ion implantation technologies
In importance it is self-evident.And to ensure the accuracy of implant angle, its major prerequisites is exactly the datum mark of X-axis and Y-axis must
Must be correct.If datum mark zero point is incorrect, that all angle will be all subjected to displacement.
In large batch of production process, the fluctuation of ion beam (beam line) angle and old due to moving component
Change the deterioration for the control element for being either lost or controlling moving component, can all make ion beam relative and X-axis or Y-axis
Datum mark drift about.And then have influence on the yield rate of all products.Therefore the periodic calibration to implanter references angle is just
As certainty.
Wafer angle calibration method is still to be entered with 9 wafers according to different relative to the axisymmetric angles of X/Y at present
Row injection, then compare the symmetrical chip of implant angle heat wave (Thermal wave, TW) value it is whether consistent, so as to interpretation note
Whether the references angle entered is drifted about, and the size of drift is calculated accordingly by calculation formula.Wherein heat wave value can be with
Reflect degree of injury of the ion implanting to lattice.Specifically, with good naked (bare) control wafer of 9 comparison of coherence, select first
5 angles using X-axis as axle center are taken, are 1,0.5,0, -0.5, -1 respectively.5 angles using Y-axis as axle center are chosen again, respectively
It is 1,0.5,0, -0.5, -1.Wherein 0 degree of X-axis shares a wafer for 0 degree with Y-axis.Other angles are respectively with a chip.It is altogether every
Group chip shares 9.After the completion of all wafers ion implanting, respectively using each axial direction as curve map abscissa, with respective axes
The TW values of each angle make curve map for ordinate.The angle corresponding to the minimum in matched curve figure in the graph
Angle value is exactly this actual axial benchmark zero point in absolute physical meaning.Namely need to adjust OFFSET values.
But following shortcoming existing for the program：1) number of wafers needed is more；2) selected whole group chip one is required
Cause property is high, and otherwise, measurement result is inaccurate, in addition if very big waste can be caused by replacing whole group chip again；3) at present
Chip be recycle, after being finished every time, annealed, then reused.Monolithic injection in engineering is injected is different
Often or the monolithic technology in annealing process can all cause the uniformity of whole group chip to reduce extremely, and the above method is only first
Begin to detect the uniformity of whole group chip, do not account for then as the uniformity for recycling whole group chip can reduce
The fact, cause measurement result inaccuracy after recycling, influence angle analysis and calibration, and then under the yield rate of IC performances
Drop；4) chip recycled, with the increase of the number used, the cumulative effect of injection is also more and more obvious and this
The size that cumulative effect obtains angle of the variation tendency with injecting is corresponding.So as to mask the real OFFSET values of board so that
Measurement figure obtained by wafer angle measurement is better than its actual value, and this is also the not conceivable knot of those skilled in the art
Fruit.
Therefore it provides a kind of wafer angle calibration method is necessary with solving the above problems.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of wafer angle calibration method,
Required number of wafers is more during for solving in the prior art to calibrate wafer angle in ion implantation apparatus, measurement process is multiple
Miscellaneous, the problem of measurement result is inaccurate.
In order to achieve the above objects and other related objects, the present invention provides a kind of wafer angle calibration method, comprises at least
Following steps：
S1：Choose a chip to be measured；
S2：Ion implanting is carried out to the chip to be measured；
S3：Measure on the symmetrical at least parameter value of 2 row points of X-axis and symmetrical extremely on Y-axis on the chip to be measured
The parameter value of few two row point, wherein, often include at least two measuring points in row point and each column point；
S4：According to being averaged on the symmetrical at least parameter value of 2 row points of X-axis on the chip to be measured measured
Value difference value determines the angle [alpha] that the chip to be measured deflects around Y-axis；According to the ginseng on the symmetrical at least two row point of Y-axis measured
The average value difference of numerical value determines the angle beta that the chip to be measured deflects around X-axis；
S5：Angle calibration system is carried out to the chip to be measured according to the angle [alpha] and the angle beta.
Alternatively, the parameter value includes heat wave value or resistivity value.
Alternatively, in the step S1, the method for choosing chip to be measured is：The parameter value of chip is measured, if measured
The uniformity and average value of point within a preset range, then choose the chip as chip to be measured.
Further, method of the invention is further comprising the steps of：Establish the parameter on the symmetrical two rows point of X-axis
First table of comparisons of the relation between the angle [alpha] that the average value difference and chip of value deflect around Y-axis.
Alternatively, ion implanting is carried out using spot beam；Injected for spot beam, first table of comparisons is same
Between the angle beta that sample deflects suitable for the average value difference and chip of the parameter value on the symmetrical two row point of Y-axis around X-axis
Relation；In the step S4, according to the parameter value on the chip to be measured measured on the symmetrical two rows point of X-axis
Average value difference, search first table of comparisons, determine the angle [alpha] that the chip to be measured deflects around Y-axis；According to the institute measured
The average value difference for the parameter value for arranging point on chip to be measured on Y-axis symmetrical two is stated, searches first table of comparisons, really
The angle beta that the fixed chip to be measured deflects around X-axis.
Further, method of the invention is further comprising the steps of：Establish the parameter on the symmetrical two row point of Y-axis
Second table of comparisons of the relation between the angle beta that the average value difference and chip of value deflect around X-axis.
Alternatively, in the step S4, according to the institute on the chip to be measured measured on the symmetrical two rows point of X-axis
The average value difference of parameter value is stated, first table of comparisons is searched, determines the angle [alpha] that the chip to be measured deflects around Y-axis；According to
The average value difference of the parameter value of point is arranged on the chip to be measured measured on Y-axis symmetrical two, searches described second
The table of comparisons, determine the angle beta that the chip to be measured deflects around X-axis.
Alternatively, ion implanting is carried out using ribbon ion beam.
Alternatively, method of the invention comprises the following steps：
S1：Choose a chip to be measured；Measure on the chip to be measured on the symmetrical two rows point of X-axis parameter value and on
The parameter value of the symmetrical two rows point of Y-axis；
S2：Ion implanting is carried out to the chip to be measured；
S3：On the parameter value of the symmetrical two rows point of X-axis and on Y on the chip to be measured after measurement ion implanting
The parameter value of axisymmetric two row point；
S4：Calculate on the chip to be measured on the first row point in the symmetrical two rows point of X-axis before ion implantation after institute
The average value A2 of the difference of the parameter value after stating the average value A1 of the difference of parameter value, the first row point before ion implantation,
And calculate on Y-axis it is symmetrical two row point in first row point before ion implantation after the parameter value difference average value
B1, first row point before ion implantation after the parameter value difference average value B2；According to the average value A1 and averagely
Value A2 difference determines the angle [alpha] that the chip to be measured deflects around Y-axis；It is true according to the average value B1 and average value B2 difference
The angle beta that the fixed chip to be measured deflects around X-axis；
S5：Angle calibration system is carried out to the chip to be measured according to the angle [alpha] and the angle beta.
Alternatively, if the angle [alpha] and the angle beta are in preset threshold range, it is determined that the chip to be measured is vertical
In ion beam.
As described above, the wafer angle calibration method of the present invention, has the advantages that：(1) chip angle of the invention
Spend in calibration method, it is only necessary to a piece of chip to be measured is chosen, so as to avoid the need for ensureing that multiple chips have good uniformity
Problem, overcomes that number of wafers needed for calibration method of the prior art is more, the problem of needing whole group wafer uniformity high；(2)
Due to only needing to choose a piece of chip to be measured in the wafer angle calibration method of the present invention, production cost can be effectively saved；(3) with
Calibration method of the prior art is compared, and wafer angle calibration method of the invention can substantially reduce the abnormal interference of control wafer,
Reduce and find and solve the number of problem and cost of labor；(4) compared with prior art, the present invention can more accurately judge
The angle skew of ion injection machine table；(5) for the chip of recycling, the present invention can be by measuring the parameter of chip in advance
Value, using the chip for meeting preparatory condition as chip to be measured, prevents the cumulative effect of ion implanting from being led to the adverse effect of chip
Cause angle detection inaccurate, and then prevent that calibration is inaccurate；(6) present invention can be by measuring chip to be measured before and after ion implanting
The parameter value of upper respective point, the influence that chip to be measured inhomogeneities itself is brought is reduced, further improves calibration accuracy.
Brief description of the drawings
Fig. 1 is shown as the flow chart of the wafer angle calibration method of the present invention.
The ribbon ion beam that Fig. 2 is shown as incides the schematic diagram on chip to be measured.
The spot beam that Fig. 3 is shown as incides the schematic diagram on chip to be measured.
Fig. 4 is shown as measuring the schematic diagram for the parameter value for arranging point on chip to be measured on Y-axis symmetrical two.
Fig. 5 be shown as measuring on chip to be measured on the symmetrical two rows point of X-axis parameter value schematic diagram.
Component label instructions
S1~S5 steps
1 ribbon ion beam
2 chips to be measured
3 spot beams
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Fig. 1 is referred to Fig. 5.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, the component relevant with the present invention is only shown in schema then rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
The present invention provides a kind of wafer angle calibration method, referring to Fig. 1, being shown as the flow chart of this method, at least wraps
Include following steps：
Step S1：Choose a chip to be measured；
Step S2：Ion implanting is carried out to the chip to be measured；
Step S3：Measure on the chip to be measured on the symmetrical at least parameter value of 2 row points of X-axis and symmetrical on Y-axis
At least two row point parameter value, wherein, often row point and each column point in include at least two measuring points；
Step S4：According on the chip to be measured measured on the symmetrical at least parameter value of 2 row points of X-axis
Average value difference determines the angle [alpha] that the chip to be measured deflects around Y-axis；According to measuring on the symmetrical at least 2 row points of Y-axis
The average value difference of parameter value determine the angle beta that the chip to be measured deflects around X-axis；
Step S5：Angle calibration system is carried out to the chip to be measured according to the angle [alpha] and the angle beta.
Present invention utilizes following principle：Ion beam increasingly dissipates with the increase of transmission range, vertical in chip
When ion beam, ion beam vertical injection chip, density (or the ion on chip on the symmetrical position ion implanting of X-axis
To the degree of injury of lattice) it is roughly the same, the density on the symmetrical position ion implanting of Y-axis on chip is roughly the same；
When chip and ion beam out of plumb, ion beam no longer vertical injection chip, on the symmetrical luxuriant son of position middle-range of X-axis on chip
The density of the near position ion implanting of beam transmitter is big, and the density of the position ion implanting remote apart from ion emitter is small, chip
On the position ion implanting near on the luxuriant beamlet transmitter of the symmetrical position middle-range of Y-axis density it is big, apart from ion emitter
The density of remote position ion implanting is small.It is thus possible to measure respectively on chip on the symmetrical position of X-axis and on Y-axis pair
The parameter value of the opening position reflection ion implanting density of title, according to the difference of the parameter value on the symmetrical opening position of X-axis and is closed
It can determine that chip deviates the angle of upright position in the difference of the parameter value of the symmetrical opening position of Y-axis, so as to carry out angle to chip
Degree calibration.
The pattern of ion implanting can be divided into ribbon ion beam (Ribbon Beam) injection and spot beam (Spot
Beam) inject, above-mentioned principle is applied to ribbon ion beam and spot beam simultaneously.Wherein, ribbon ion beam refers to be in banding
Ion beam, or be shaped as being more than the along the ion beam of second direction along the first size of the ion beam in a direction
Two sizes, wherein second direction is perpendicular to first direction.Ribbon ion beam can have substantially rectangular cross section shape, wherein
The height of this ribbon ion beam is more than at least three times of its width.Spot beam refers to movement, the shifting of chip by ion beam
Dynamic or both to be combined, ion beam can be distributed over the entire surface of the wafer.Atomic time in ionic bombardment chip, these
Ion meeting off-energy, and the certain depth in chip is stopped, the energy that the depth of injection is had by ion determines.It please join
Fig. 2 is read, ribbon ion beam 1 is shown as and incides schematic diagram on chip 2 to be measured.Referring to Fig. 3, it is shown as spot beam 3
Incide the situation on chip 2 to be measured.
In the present invention, according to the parameter value on the chip to be measured measured on the symmetrical at least 2 row points of X-axis
Average value difference determine the angle [alpha] that the chip to be measured deflects around Y-axis；Arranged according to measuring on Y-axis symmetrical at least two
The average value difference of the parameter value of point determines the angle beta that the chip to be measured deflects around X-axis.Can be by pre-establishing on X
First of relation between the angle [alpha] that the average value difference and chip of the parameter value of axisymmetric two rows point deflect around Y-axis
The table of comparisons, establish the angle beta deflected on the average value difference of the parameter value of the symmetrical two row point of Y-axis with chip around X-axis
Between relation second table of comparisons.And according to the ginseng on the chip to be measured measured on the symmetrical two rows point of X-axis
The average value difference of numerical value, first table of comparisons is searched, determines the angle [alpha] that the chip to be measured deflects around Y-axis；According to measuring
The chip to be measured on Y-axis it is symmetrical two row point the parameter value average value difference, search it is described second control
Table, determine the angle beta that the chip to be measured deflects around X-axis.If the angle [alpha] and the angle beta are in preset threshold range, such as
In the range of [- σ, σ], it is determined that for the chip to be measured perpendicular to ion beam, wherein σ is the value close to zero, such as 0.01 °.
Wherein, when being ribbon ion beam for incident ion beam, differ because the distribution of ion beam X-direction is distributed with Y-direction
Cause, it is necessary to establish first table of comparisons and second table of comparisons respectively, and angle [alpha] and angle are determined by searching the corresponding table of comparisons respectively
β.When being spot beam for incident ion beam, the distribution of ion beam X-direction is consistent with Y-direction distribution, therefore can only establish
First table of comparisons, first table of comparisons are equally applicable to the average value difference of the parameter value on the symmetrical two row point of Y-axis
Relation between the angle beta deflected with chip around X-axis, angle [alpha] and angle beta can be true by searching first table of comparisons
It is fixed.
Specifically, the parameter value measured in the step S3 can be reflection ion implanting density (or reflection ion note
Enter the degree of injury to lattice) heat wave value (Thermal wave values, TW values).Ion implanting can be to regular silicon into crystal
Lattice causes a certain amount of damage, and heat wave probe method is exactly come monitoring ion injection technology by the detection of the damage to lattice
's.Because ion implanting density is different, the resistivity of corresponding injection region is also different, and therefore, the parameter value can also be electricity
Resistance rate.Certain parameter value can also be the parameter value that other reactive ions inject density.
In order to reduce the influence of defect of chip to be measured itself and inhomogeneities to calibration result, the present invention is in the step S1
In, certain standard can be used to choose suitable chip to be measured.Specifically, the method for choosing chip to be measured is：Measure chip
Parameter value, such as heat wave value or resistivity value, if the uniformity of measuring point and average value are within a preset range, choose should
Chip is as chip to be measured.Wherein, measurement point is more, more uniform more be advantageous to select chip to be measured exactly.
For the chip of recycling, the chip for meeting preparatory condition is chosen by the measuring process, ion can be prevented
The cumulative effect of injection causes angle detection inaccurate to the adverse effect of chip, and then prevents that calibration is inaccurate.Certainly, also may be used
With qualified chip directly known to selection, without the measuring process.
Illustrate the wafer angle calibration method of the present invention below by specific embodiment.
Embodiment one
A kind of wafer angle calibration method, comprises the following steps：
Step S1：Choose a piece of chip to be measured；
Specifically, heat wave value (hereinafter referred to as TW) value of chip is measured, if the uniformity of measuring point and average value are pre-
If in the range of, then the chip can be chosen as chip to be measured.
Step S2：The chip to be measured is placed in position to be detected, ion implanting then is carried out to the chip to be measured；
Step S3：Chip to completing ion implanting, measures the TW values on the symmetrical two rows point of X-axis on chip to be measured,
And measure the TW values on chip to be measured on the symmetrical two row point of Y-axis；
Step S4：Determined according to the difference of the TW value average values on the chip to be measured measured on the symmetrical two rows point of X-axis
The angle [alpha] that the chip to be measured in the position to be measured deflects around Y-axis, and arranged according to measuring on Y-axis symmetrical two
The difference of the TW value average values of point determines the angle beta that the chip to be measured in the position to be measured deflects around X-axis.
Step S5：Angle calibration system is carried out to the chip to be measured according to the angle [alpha] and the angle beta.
Specifically, assume TW (x, y)=Txi+TyJ, wherein, TW (x, y) represents the TW values at (x, y) coordinate points on chip,
TxRepresent the component of TW values in the direction of the x axis on chip at (x, y) coordinate points, TyRepresent the TW at (x, y) coordinate points on chip
The component of value in the y-axis direction.
It is pointed out that herein x-axis and y-axis in chip to be measured institute in the plane, and pass through center wafer to be measured.
Referring to Fig. 4, the upper coordinate points (x1, y1) of the row of X=x1 mono-, (x1, y2), (x1, y3), (x1, y4) on measurement chip
Arranged with X=-x1 mono- and go up coordinate points (- x1, y1), (- x1, y2), (- x1, y3), the TW values of (- x1, y4), wherein, coordinate points (x1,
Y1) with (- x1, y1), (x1, y2) and (- x1, y2), (x1, y3) and (- x1, y3), (x1, y4) is with (- x1, y4) respectively about y
Axial symmetry, the TW values of each coordinate points are respectively：
TW (x1, y1)=Tx1i+Ty1J, TW (- x1, y1)=T-x1i+Ty1j；
TW (x1, y2)=Tx1i+Ty2J, TW (- x1, y2)=T-x1i+Ty2j；
TW (x1, y3)=Tx1i+Ty3J, TW (- x1, y3)=T-x1i+Ty3j；
TW (x1, y4)=Tx1i+Ty4J, TW (- x1, y4)=T-x1i+Ty4j；
Wherein, the coordinate points (x1, y1) on chip on the row of X=x1 mono-, (x1, y2), (x1, y3), the TW values of (x1, y4)
Average value is：
1/4 (TW (x1, y1)+TW (x1, y2)+TW (x1, y3)+TW (x1, y4))
=1/4 (Tx1i+Ty1j+Tx1i+Ty2j+Tx1i+Ty3j+Tx1i+Ty4j)
=1/4 [4Tx1i+(Ty1+Ty2+Ty3+Ty4)j]
=Tx1i+1/4(Ty1+Ty2+Ty3+Ty4)j
Wherein, the coordinate points (- x1, y1) on chip on the row of X=-x1 mono-, (- x1, y2), (- x1, y3), (- x1, y4's)
The average value of TW values is：
1/4 (TW (- x1, y1)+TW (- x1, y2)+TW (- x1, y3)+TW (- x1, y4))
=1/4 (T-x1i+Ty1j+T-x1i+Ty2j+T-x1i+Ty3j+T-x1i+Ty4j)
=1/4 [4T-x1i+(Ty1+Ty2+Ty3+Ty4)j]
=T-x1i+1/4(Ty1+Ty2+Ty3+Ty4)j
The average value difference of TW values on the above-mentioned coordinate points on the symmetrical two row X=x1 and X=-x1 of Y-axis is：
[Tx1i+1/4(Ty1+Ty2+Ty3+Ty4)j]-[T-x1i+1/4(Ty1+Ty2+Ty3+Ty4)j]
=Tx1i-T-x1i
=(Tx1-T-x1)i
It can be seen that the difference only has the component in X-axis, without the component in Y-axis, therefore, chip can be determined by the difference
Around the angle of Y-axis deflection, even if chip deflects around X-axis, the difference angle that also only reflection chip deflects around Y-axis.
Similarly, as shown in figure 5, coordinate points (x2, y5) in Y=y5 a line can be measured on chip, (x3, y5), (x4,
Y5), coordinate points (x2 ,-y5) in (x5, y5) and Y=-y5 a line, (x3 ,-y5), (x4 ,-y5), the TW values of (x5 ,-y5), its
In, coordinate points (x2, y5) and (x2 ,-y5), (x3, y5) and (x3 ,-y5), (x4, y5) and (x4 ,-y5), (x5, y5) with (x5 ,-
Y5 it is) symmetrical respectively about X-axis.
Average value difference on the TW values of the above-mentioned coordinate points on the symmetrical two rows Y=y5 and Y=-y5 of X-axis is：
[1/4(Tx2+Tx3+Tx4+Tx5)i+Ty5j]-[1/4(Tx2+Tx3+Tx4+Tx5)i+T-y5j]
=Ty5j-T-y5j
=(Ty5-T-y5)j
It can be seen that the difference only has the component in Y-axis, without the component in X-axis, therefore, chip can be determined by the difference
Around the angle of X-axis deflection, even if chip deflects around Y-axis, the difference angle that also only reflection chip deflects around X-axis.
On being determined according to the average value difference of the TW values on the chip measured on the symmetrical two rows point of X-axis in described
The angle that the chip to be measured of position to be measured deflects around Y-axis, specifically, can by establish in advance on TW difference DELTAs TW with
Chip is around the table of comparisons of reference axis deflection angle, such as table 1：
| Deflection angle α | 0.05 | 0.1 | 0.15 | 0.2 | 0.25 | 0.3 |
| ΔTW | -- | -- | -- | -- | -- | -- |
Wherein, deflection angle and the corresponding relation of TW differences can be obtained by way of experiment, can also pass through prior art
In specific formulation be calculated.
Then, deflection angle corresponding with the difference is searched from the table of comparisons that this is established in advance.For incident ion beam
For ribbon ion beam when, due to ion beam X-direction distribution with Y-direction distribution it is inconsistent, it is necessary to establish respectively first table of comparisons and
Second table of comparisons, and determine angle [alpha] and angle beta by searching the corresponding table of comparisons respectively.It is point-like ion for incident ion beam
Shu Shi, the distribution of ion beam X-direction is consistent with Y-direction distribution, therefore can only establish first table of comparisons, and first table of comparisons is same
Between the angle beta that average value difference and chip suitable for the parameter value on the symmetrical two row point of Y-axis deflect around X-axis
Relation, angle [alpha] and angle beta can be can determine that by searching first table of comparisons.
Wherein, if on the symmetrical at least average value difference of the TW values of 2 row points of X-axis and measured on the chip measured
The TW values on the symmetrical at least two row point of Y-axis average value difference in predetermined threshold range [- σ, σ], it is determined that locate
In the position to be measured the chip to be measured perpendicular to ion beam, that is, relative to Y-axis and X-axis into about zero degree.Wherein,
σ be close to zero value, such as 0.01 °.If the average value on the chip measured on the symmetrical at least TW values of 2 row points of X-axis
The average value difference of difference and the TW values on the symmetrical at least two row point of Y-axis measured more than predetermined threshold range [- σ,
σ], then angle calibration system is carried out to the chip to be measured according to angle α and angle beta so that the benchmark injection of ion implantation apparatus
Angle is vertical with chip.
It is pointed out that in the present embodiment, four measuring points are often chosen in row point and each column point, in other embodiments
In, the measuring point of other numbers can also be chosen, such as six, eight, number is more, and the degree of accuracy is higher, herein should be inundue
Limit the scope of the invention.
Further, in the present embodiment, only measure on the chip to be measured on the symmetrical two rows point of X-axis parameter value and
On the parameter value of the symmetrical two row point of Y-axis, in other embodiments, the line number and columns of measuring point can also be increased, to enter
One step improves the accuracy of measurement result.The parameter value of 4 row points and four row point is such as measured respectively, it is middle wherein in the four rows point
2 row points are symmetrical on X-axis, and the row point of outside two is symmetrical on X-axis；In the four row point, the row of centre two point, outside symmetrical on Y-axis
2 row points are symmetrical on Y-axis.
The wafer angle calibration method of the present invention only needs a wafer, it is not necessary to ensures that multiple chips have well consistent
Property, cost can be not only reduced, the accuracy of wafer angle measurement result can also be improved, so as to more accurately judge
The angle skew of ion injection machine table, so as to accurately be calibrated to ion injection machine table references angle, ensure that ion implanting is brilliant
The accuracy of the angle of piece.The present invention can also choose suitable chip to be measured, Ran Houjin using certain screening criteria in advance
The detection and calibration of row wafer angle, accordingly even when can also avoid the accumulation of ion implanting in the case where recycling chip
Effect causes the problem of measurement result inaccuracy.
Embodiment two
The present embodiment uses essentially identical technical scheme with embodiment one, and difference is, passes through in the present embodiment
The parameter value of respective point on chip to be measured before and after ion implanting is measured, reduces the influence that chip to be measured inhomogeneities itself is brought,
Further improve calibration accuracy.
The wafer angle calibration method of the present invention comprises the following steps：
Step S1：Choose a chip to be measured；Measure on the chip to be measured on the symmetrical two rows point of X-axis parameter value and
Parameter value on the symmetrical two rows point of Y-axis；
Step S2：Ion implanting is carried out to the chip to be measured；
Step S3：Measure after ion implanting on the chip to be measured on the symmetrical two rows point of X-axis the parameter value and
The parameter value on the symmetrical two row point of Y-axis；
Step S4：Calculate on the chip to be measured on the first row point in the symmetrical two rows point of X-axis before ion implantation after
The average value A1 of difference of the parameter value, the first row point before ion implantation after the parameter value difference average value
A2, and calculate on first row point in the symmetrical two row point of Y-axis before ion implantation after the difference of the parameter value be averaged
Value B1, first row point before ion implantation after the parameter value difference average value B2；According to the average value A1 with putting down
Average A2 difference determines the angle [alpha] that the chip to be measured deflects around Y-axis；According to the average value B1 and average value B2 difference
Determine the angle beta that the chip to be measured deflects around X-axis；
S5：Angle calibration system is carried out to the chip to be measured according to the angle [alpha] and the angle beta.
In the present embodiment, the influence that chip to be measured inhomogeneities itself is brought has been reduced, can further improve calibration essence
Degree.
In summary, wafer angle calibration method of the invention, has the advantages that：(1) chip angle of the invention
Spend in calibration method, it is only necessary to a piece of chip to be measured is chosen, so as to avoid the need for ensureing that multiple chips have good uniformity
Problem, overcomes that number of wafers needed for calibration method of the prior art is more, the problem of needing whole group wafer uniformity high；(2)
Due to only needing to choose a piece of chip to be measured in the wafer angle calibration method of the present invention, production cost can be effectively saved；(3) with
Calibration method of the prior art is compared, and wafer angle calibration method of the invention can substantially reduce the abnormal interference of control wafer,
Reduce and find and solve the number of problem and cost of labor；(4) compared with prior art, the present invention can more accurately judge
The angle skew of ion injection machine table；(5) for the chip of recycling, the present invention can be by measuring the parameter of chip in advance
Value, using the chip for meeting preparatory condition as chip to be measured, prevents the cumulative effect of ion implanting from being led to the adverse effect of chip
Cause angle detection inaccurate, and then prevent that calibration is inaccurate；(6) present invention can be by measuring chip to be measured before and after ion implanting
The parameter value of upper respective point, the influence that chip to be measured inhomogeneities itself is brought is reduced, further improves calibration accuracy.So
The present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. a kind of wafer angle calibration method, it is characterised in that when chip is perpendicular to ion beam, ion beam vertical injection is brilliant
Piece, it is roughly the same on the density of the symmetrical position ion implanting of X-axis in chip using any point as origin on chip,
Density on the symmetrical position ion implanting of Y-axis on chip is roughly the same, including at least following steps：
S1：Choose a chip to be measured；
S2：Ion implanting is carried out to the chip to be measured；
S3：Measure on the chip to be measured on the symmetrical at least parameter value of 2 row points of X-axis and on Y-axis symmetrical at least two
The parameter value of point is arranged, wherein, often include at least two measuring points in row point and each column point；
S4：According to the average value difference on the chip to be measured measured on the symmetrical at least parameter value of 2 row points of X-axis
Value determines the angle [alpha] that the chip to be measured deflects around Y-axis；According to the parameter value on the symmetrical at least two row point of Y-axis measured
Average value difference determine the angle beta that the chip to be measured deflects around X-axis；
S5：Angle calibration system is carried out to the chip to be measured according to the angle [alpha] and the angle beta.
2. wafer angle calibration method according to claim 1, it is characterised in that：The parameter value includes heat wave value or electricity
Values of resistivity.
3. wafer angle calibration method according to claim 1, it is characterised in that：In the step S1, choose to be measured
The method of chip is：Measure on chip on the symmetrical at least parameter value of 2 row points of X-axis and on symmetrical at least two row of Y-axis
Point parameter value, wherein, often row point and each column point in include at least two measuring points, if the uniformity of measuring point and averagely
Value within a preset range, then chooses the chip as chip to be measured.
4. wafer angle calibration method according to claim 1, it is characterised in that further comprising the steps of：Establish on X
First of relation between the angle [alpha] that the average value difference and chip of the parameter value of axisymmetric two rows point deflect around Y-axis
The table of comparisons.
5. wafer angle calibration method according to claim 4, it is characterised in that：Ion note is carried out using spot beam
Enter；First table of comparisons is equally applicable to the average value difference and chip of the parameter value on the symmetrical two row point of Y-axis
Relation between the angle beta of X-axis deflection；In the step S4, according to symmetrical on X-axis on the chip to be measured measured
2 row points the parameter value average value difference, search first table of comparisons, determine that the chip to be measured deflects around Y-axis
Angle [alpha]；According on the chip to be measured measured on Y-axis it is symmetrical two row point the parameter value average value difference,
First table of comparisons is searched, determines the angle beta that the chip to be measured deflects around X-axis.
6. wafer angle calibration method according to claim 4, it is characterised in that further comprising the steps of：Establish on Y
Second of relation between the average value difference and the angle beta that is deflected around X-axis of chip of the parameter value of axisymmetric two row point
The table of comparisons.
7. wafer angle calibration method according to claim 6, it is characterised in that：In the step S4, according to measuring
The chip to be measured on the symmetrical two rows point of X-axis the parameter value average value difference, search it is described first control
Table, determine the angle [alpha] that the chip to be measured deflects around Y-axis；Arranged according on the chip to be measured measured on Y-axis symmetrical two
The average value difference of the parameter value of point, second table of comparisons is searched, determines the angle that the chip to be measured deflects around X-axis
β。
8. wafer angle calibration method according to claim 6, it is characterised in that：Ion note is carried out using ribbon ion beam
Enter.
9. wafer angle calibration method according to claim 1, it is characterised in that comprise the following steps：
S1：Choose a chip to be measured；Measure on the chip to be measured on the parameter value of the symmetrical two rows point of X-axis and on Y-axis
The parameter value of symmetrical two rows point；
S2：Ion implanting is carried out to the chip to be measured；
S3：On the parameter value of the symmetrical two rows point of X-axis and on Y-axis pair on the chip to be measured after measurement ion implanting
The parameter value of the 2 row points claimed；
S4：Calculate on the chip to be measured on the first row point in the symmetrical two rows point of X-axis before ion implantation after the ginseng
The average value A1 of the difference of numerical value, the first row point before ion implantation after the parameter value difference average value A2, and count
Calculate on first row point in the symmetrical two row point of Y-axis before ion implantation after the parameter value difference average value B1, the
One arranges the average value B2 of the difference of the parameter value after putting before ion implantation；According to the average value A1's and average value A2
Difference determines the angle [alpha] that the chip to be measured deflects around Y-axis；According to determining the average value B1 and average value B2 difference
The angle beta that chip to be measured deflects around X-axis；
S5：Angle calibration system is carried out to the chip to be measured according to the angle [alpha] and the angle beta.
10. wafer angle calibration method according to claim 1, it is characterised in that：If the angle [alpha] and the angle beta
In preset threshold range, it is determined that the chip to be measured is perpendicular to ion beam.
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| CN107248491A (en) * | 2017-06-14 | 2017-10-13 | 上海华力微电子有限公司 | A kind of bearing calibration of the implant angle of ion beam |
| KR102506098B1 (en) * | 2019-09-11 | 2023-03-06 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Method and system of estimating wafer crystalline orientation |
| CN111584388B (en) * | 2020-06-11 | 2022-07-01 | 上海华虹宏力半导体制造有限公司 | Monitoring method of ion implantation machine |
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| CN101197241A (en) * | 2002-04-10 | 2008-06-11 | 应用材料公司 | A method of implanting a substrate and an ion implanter for performing the method |
| CN101651086A (en) * | 2008-08-15 | 2010-02-17 | 和舰科技(苏州)有限公司 | Method for monitoring ion implantation angle |
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| JP4385699B2 (en) * | 2003-09-25 | 2009-12-16 | オムロン株式会社 | Semiconductor wafer direction adjusting method and semiconductor wafer direction adjusting apparatus |
| US7459703B2 (en) * | 2005-08-31 | 2008-12-02 | Varian Semiconductor Equipment Associates, Inc. | Ion implant beam angle integrity monitoring and adjusting |
| JP2008146863A (en) * | 2006-12-06 | 2008-06-26 | Nissin Ion Equipment Co Ltd | Ion beam measuring method |
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| CN101651086A (en) * | 2008-08-15 | 2010-02-17 | 和舰科技(苏州)有限公司 | Method for monitoring ion implantation angle |
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