CN105244406A - Ultraviolet detector based on palladium/tin dioxide/silicon heterojunction and preparation method thereof - Google Patents
Ultraviolet detector based on palladium/tin dioxide/silicon heterojunction and preparation method thereof Download PDFInfo
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 61
- 239000010703 silicon Substances 0.000 title claims abstract description 61
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims description 13
- 229910003445 palladium oxide Inorganic materials 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 49
- 238000004544 sputter deposition Methods 0.000 claims abstract description 36
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000004044 response Effects 0.000 claims abstract description 10
- 238000011084 recovery Methods 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000005273 aeration Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- VRVAZSINCAZFLH-UHFFFAOYSA-N oxygen(2-) tin(4+) titanium(4+) Chemical compound [O--].[O--].[Ti+4].[Sn+4] VRVAZSINCAZFLH-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 2
- 238000006701 autoxidation reaction Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000003197 catalytic effect Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 239000003054 catalyst Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 238000005265 energy consumption Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000007170 pathology Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000011540 sensing material Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention particularly provides a p-n heterotypic heterojunction material formed by a nanometer tin dioxide thin film and a silicon substrate, and a high performance ultraviolet detector using palladium as a catalyst layer. The tin dioxide thin film grows on the silicon substrate through a sputtering method. Mask and sputtering methods are used to prepare the palladium catalyst layer whose area is smaller than the area of the tin oxide film on the surface of the thin film. According to the invention, the palladium/tin dioxide/silicon heterojunction hydrogen ultraviolet detector which is prepared through the catalytic effect of the palladium film and the amplification effect of tin dioxide/silicon heterojunction has the advantages of simple process, low cost, low energy consumption, high sensitivity and fast response and recovery, does not need a heater, can work under room temperature, can well detect ultraviolet, and has an important application prospect.
Description
Technical field
The invention belongs to ultraviolet light detector field, be specifically related to a kind of ultraviolet light detector based on palladium/tin ash/silicon heterogenous.
Background technology
Ultraviolet detection technology is one of the research hot topic in photodetection field in recent years.The emerging Detection Techniques of another door continued beyond laser, the detection of infrared and visible ray.It is widely used at military, medical treatment, scientific research and other industrial circles.Such as, militarily, ultraviolet detection technology can be used for [photoelectron technology .2014.24 (2): 129-133.] such as Ultraviolet Communication, ultraviolet guidance, ultraviolet interference, UV warming; Medically can be used for the detection [NuclearPhysicsA, 2006,563 (1): 27-30.] of cancer cell, microbe, red blood born of the same parents, white blood born of the same parents, hemochrome, nucleus and other pathologies; The industrial detection analysis that can be used for gas; For environmental monitoring in environmental protection, particularly the improvement etc. of ozone layer, makes the development and application of more highly sensitive ultraviolet light detector more urgent.
In recent years, the key of ultraviolet detector acquisition extensive use is the reduction with cost of manufacture that improves constantly of Detection Techniques, and the performance of prepared detector also constantly obtains breakthrough.Silicon-based semiconductor material has the technology of preparing of comparative maturity, and preparation technology is relatively perfect, therefore silica-base material oneself become and make ultraviolet detector topmost material.The volume of the silica-based ultraviolet detector utilizing silicon-based semiconductor material to manufacture is general less, lighter in weight, and without the need to the circuit of complexity, substantially increase the scope of application of ultraviolet detector, but because its most of energy gap is narrower, except absorbing ultraviolet light, also absorb visible ray [FreseniusJAnalChem.2001.371 (8): 1070-1075].Compared with silicon-based semiconductor, also has a kind of monocrystal thin films ultraviolet detector, such transducer is using semi-conducting material as ultraviolet-sensitive material, main utilization only absorbs the features such as the electron drift saturated velocity of the wide-band gap material of ultraviolet light is high, dielectric constant is little, energy gap is large, these features are applicable to make high frequency, high-power, radiation-resistant detector, the ultraviolet detector of monocrystal thin films has also been stepped and has gone up Industrialization.Monocrystal thin films such as the materials such as carborundum, gallium nitride, zinc oxide also start to put into production, but because growing single crystal semiconductor film equipment needed thereby is expensive, and with regard to current Crystal Growth Technique, its preparation technology's difficulty still just cannot obtain very greatly universal and application.Therefore, in order to improve sensitivity, response speed also its reduction working temperature of silicon-based semiconductor gas sensor, further improvement must be done to Metal Oxide Semiconductor Gas Sensing sensing material.
In the present invention, we utilize the enlarge-effect of the catalytic effect of palladium film and tin ash/silicon heterogenous, have developed a kind of palladium/tin ash/silicon dissimilar materials with ultraviolet-sensitive characteristic, tin ash can be made greatly to improve UV light sensitivity.Such as, when UV-irradiation intensity is 1 milliwatt every square centimeter, sensitivity is 2092%, this detector response time 0.5 second, 0.2 second recovery time; When ultraviolet ray intensity is 2 milliwatt every square centimeter, this detector sensitivity reaches 3302%, 0.27 second response time, 0.1 second recovery time; And when ultraviolet ray intensity is 5 milliwatt every square centimeter, sensitivity just reaches 12240%, 0.43 second response time, 0.3 second recovery time.
Palladium/tin ash/silicon heterogenous utilizes the enlarge-effect of the catalytic effect of palladium film and tin ash/silicon heterogenous, and improve the responsiveness of device, device performance is significantly improved.Therefore, palladium/tin ash/silicon heterogenous application prospect demonstrating uniqueness in ultraviolet detector making.
Summary of the invention
The object of the invention is to provide a kind of preparation method based on palladium/tin ash/silicon heterogenous ultraviolet light detector and this detector.
The present invention adopts the silicon having silicon dioxide to cover as substrate, prepares ultraviolet light detector, make use of the enlarge-effect comprehensive advantage of the catalytic effect of palladium and the heterojunction of tin ash and silicon using palladium/tin ash as basis material.The technique that simultaneously the present invention adopts is simple, room temperature condition detection and with semiconductor planar process compatible, be easy to integrated, be suitable for producing in enormous quantities, thus there is important using value.
Ultraviolet light detector of the present invention comprises silicon substrate that silicon dioxide covers from top to bottom successively, adopts direct current magnetron sputtering process at the nanometer titanium dioxide tin thin film of Grown, on tin dioxide thin film layer, utilizes mask and the DC magnetron sputtering method preparation palladium chtalyst layer less than tin ash membrane area; Indium point electrode on palladium membranes and the indium point electrode on indium metal layer respectively as upper and lower electrode, extracting power supply cord, Keithley digital sourcemeter 2602B is connected in series connection, and the voltage of power supply is-0.5 volt; The Si-Substrate Thickness wherein covering silicon dioxide is 0.5 ~ 2 millimeter, and the thickness of nanometer titanium dioxide tin thin film is 50-100 nanometer, preferably 70 nanometers, and the thickness of palladium chtalyst layer is 10 ~ 30 nanometers, preferred 15nm.
Preparation method based on palladium/tin ash/silicon heterogenous ultraviolet light detector of the present invention, its step is as follows:
(1) process of substrate
First use deionized water cleaning silicon chip 10 minutes in ultrasonic wave, then use acetone cleaning silicon chip 1 hour in ultrasonic wave, finally use washes of absolute alcohol silicon chip 0.5 hour again.
(2) preparation of tin dioxide thin film
Put into sputtering chamber after being dried up by cleaned p-type silicon substrate, the resistivity of p-type silicon substrate is 0.1-1 Europe rice centimetre, utilizes pumped vacuum systems to make sputtering chamber be in vacuum state, until background vacuum reaches target vacuum (0.5 ~ 2.5 × 10
-4handkerchief); Under the prerequisite of maintenance 5 handkerchief pressure, with volume ratio 1::2 to 2:1, the ratio of preferred about 1:1 passes into argon gas/oxygen mixed gas in sputtering chamber, after stable gas pressure, tin target is utilized to start sputtering, wherein tin target purity used is 99.9% (mass fraction), and sputtering power and sputtering time elect 90 watts and 5-10 minute respectively as; After sputtering, keep aeration status 15-35 minute, continue afterwards to vacuumize and make sputtering chamber be in vacuum state.
(3) preparation of palladium chtalyst layer
On the basis of step (two), when vacuum degree reaches 0.5 ~ 2.5 × 10
-4after handkerchief, under the prerequisite of maintenance 3 handkerchief pressure, argon gas is passed in sputtering chamber, after stable gas pressure, start the sputtering of palladium target, wherein palladium target purity used is 99.9% (mass fraction), and sputtering direct voltage, sputtering direct current and sputtering time are respectively 0.26 kilovolt, 0.20 ampere and 1 ~ 3 minute; Vacuumize and make system vacuum reach 1 ~ 2 × 10
-4handkerchief, after 2 hours, takes out sample.
Can obtain palladium/tin ash/Si heterojunction material by said process like this, this material has sensitlzing effect to 365nm ultraviolet.Such as, at ambient temperature with under 365nm ultraviolet light, palladium/tin ash/silicon heterogenous photoelectric current (luminous power is 5 milliwatt every square centimeter) resistance ratio dark current resistance increases by 12240%; Are about the fastest response time and recovery time 0.43 second and 0.3 second.
Palladium/tin ash/Si heterojunction material provided by the present invention, can develop ultraviolet-sensitive device with it, and this device, without the need to heater, can at room temperature work, and consumes energy low, and technique is simple, highly sensitive, and response, recovery time are short.
Accompanying drawing explanation
The structural representation of Fig. 1 device of the present invention.
Fig. 2 take p-type silicon chip as the palladium/tin ash/silicon heterogenous volt-ampere characteristic under room temperature and different uv power of substrate.
Fig. 3 take p-type silicon chip as the palladium/tin ash/silicon heterogenous electric current change curve in time under room temperature, dark condition and in different uitraviolet intensity of substrate.
As shown in Figure 1, each component names is: indium electrode layer silicon chip 1, p-type silicon base 2, silicon dioxide layer 3, tin dioxide thin film 4, palladium membranes 5, indium point electrode 6 and Keithley digital sourcemeter 2602B7;
As shown in Figure 2, in room temperature, different uitraviolet intensity, with silicon chip be the silicon heterogenous current-voltage curve under different uv power of palladium/tin ash/p-of substrate.Are respectively fastest response time and recovery time 0.27 second and 0.3 second.
As shown in Figure 3, under room temperature, dark condition and different uv power, the current versus time curve that palladium/tin ash/p-is silicon heterogenous.
Embodiment
Embodiment 1:
We have chosen thickness be the p-type monocrystalline silicon piece of 0.5 millimeter as substrate, retain its natural oxidizing layer.With deionized water cleaning silicon chip 10 minutes in ultrasonic wave, then use acetone cleaning silicon chip 1 hour in ultrasonic wave, finally use washes of absolute alcohol silicon chip 0.5 hour again.
Adopt direct current magnetron sputtering process to prepare tin dioxide thin film: cleaned silicon chip is put into sputtering chamber, open pumped vacuum systems and vacuumize; When background vacuum is 2.0 × 10
-4during handkerchief, pass into argon gas/oxygen mixed gas, two kinds of gas ratios at 1:1, and maintain the pressure of 5 handkerchiefs, and after stable gas pressure, start to sputter tin target, sputtering power is 90 watts, and sputtering time is 10 minutes, and base reservoir temperature is room temperature.Form the tin dioxide film that a layer thickness is about 70 nanometers on silicon.After sputtering, keep aeration status 20 minutes, then stop logical argon gas and oxygen, pumped vacuum systems works on.
Mask and direct current magnetron sputtering process is adopted to prepare palladium chtalyst layer: when background vacuum is 0.5 ~ 2.5 × 10
-4during handkerchief, pass into argon gas, and maintain the pressure of 3 handkerchiefs, after stable gas pressure, start with purity for (mass fraction) 99.9% palladium target sputtering, sputtering direct voltage be 0.26 kilovolt, sputtering direct current is 0.20 ampere, and sputtering time is 2 minutes, and base reservoir temperature is room temperature.After sputtering, stop logical argon gas, pumped vacuum systems works on, and makes sample be 1.5 × 10 in vacuum degree
-4keep 2 hours under the environment of handkerchief, then take out sample.Thickness 15 nanometer of palladium membranes 5; The area of silicon chip and tin dioxide thin film is 1 cm x 1 centimetre, and the area of palladium membranes is 0.5 cm x 0.5 centimetre.
Indium point electrode 6 on palladium membranes 5 and indium metal layer 1 are respectively as upper and lower electrode, and Keithley digital sourcemeter 2602B7 is connected in series connection, and the voltage of power supply is-0.5 volt.Like this, the ultraviolet light transducer that one has palladium/tin ash/p-silicon heterogenous is prepared complete, and its structure as shown in Figure 1.
As shown in Figure 2, to device made by the present invention at ambient temperature, the current versus time curve under different uv power is measured.Result shows: palladium/tin ash/silicon heterogenous from unglazed to when having light to change, curent change is larger.Show good UV light sensitivity.
As shown in Figure 3, under room temperature, reverse voltage 0.5 volt, the ultraviolet sensitiveness of 365nm under different luminous power is measured to device made by the present invention.Experiment shows: palladium/tin ash/p-is silicon heterogenous under the ultraviolet light of 1 milliwatt every square metre, 2 milliwatts every square metre, 5 milliwatt every square metre, and sensitivity is respectively 2092%, 3302% and 12240%.Response time is respectively 0.5 second, 0.27 second, 0.43 second; Be respectively 0.2 second, 0.1 second, 0.3 second recovery time.
Claims (5)
1. based on a ultraviolet light detector for palladium/tin ash/silicon heterogenous,
Wherein, adopt the palladium/tin ash/Si heterojunction material with ultraviolet-sensitive,
Agent structure is the special-shaped heterojunction of p-n that nanometer titanium dioxide tin thin film (4) and p-type silicon base (2) are formed; Wherein, silicon base retains the silicon dioxide layer (3) of autoxidation, tin dioxide thin film surface is coated with palladium chtalyst layer (5); At palladium chtalyst layer (5) upper formation indium point electrode (6), form indium metal layer (1) on the surface as another electrode in the upper side relative with silicon dioxide layer (3) of silicon base (2);
Connect indium positive electrode (6) and indium metal layer negative electrode (1), and digital sourcemeter of connecting (7); Voltage is-0.5 volt;
At ambient temperature with under 365nm UV-irradiation condition, palladium/tin ash/silicon heterogenous in-0.5 voltaism pressure, photoelectric current resistance ratio dark current resistance increases by 12240%, and its luminous power is 5 milliwatt every square centimeter; Are respectively the fastest response time and recovery time 0.43 second and 0.3 second.
2. as claimed in claim 1 based on the ultraviolet light detector of palladium/tin ash/silicon heterogenous,
It is characterized in that: the thickness of tin dioxide thin film (4) is 50-100 nanometer, the thickness of palladium chtalyst layer (5) is 10 ~ 30 nanometers, and the thickness of silicon is 0.5-2 millimeter, and the resistivity of p-type silicon is 0.1-1 ohmcm.
3., as claimed in claim 1 based on the preparation method of the ultraviolet light detector of palladium/tin ash/silicon heterogenous, its preparation methods steps is as follows:
(1) first use deionized water cleaning silicon chip in ultrasonic wave, then use acetone cleaning silicon chip in ultrasonic wave, finally use washes of absolute alcohol silicon chip again;
(2) put into sputtering chamber after cleaned p-type silicon base being dried up, utilize pumped vacuum systems to make sputtering chamber be in vacuum state, until background vacuum reaches target vacuum, 0.5 ~ 2.5 × 10
-4handkerchief;
(3) under the prerequisite of maintenance 5 handkerchief pressure, in sputtering chamber, pass into argon gas/oxygen mixed gas, after stable gas pressure, utilize tin target to start sputtering, sputtering power and sputtering time elect 90 watts and 5-10 minute respectively as;
(4) in 15-35 minute after silicon substrate surface obtains tin dioxide thin film, need to continue to keep aeration status, stop passing into of argon gas and oxygen afterwards, continue to utilize pumped vacuum systems to make sputtering chamber be in vacuum state, until background vacuum reaches target vacuum, 0.5 ~ 2.5 × 10
-4handkerchief;
(5) under the prerequisite of maintenance 3 handkerchief pressure, argon gas is passed in sputtering chamber, after stable gas pressure, start the sputtering of palladium target, its palladium target purity is 99.9% (mass fraction), and sputtering direct voltage, sputtering direct current and sputtering time are respectively 0.26 kilovolt, 0.20 ampere and 1 ~ 3 minute; Pumped vacuum systems is again utilized to make background vacuum reach 1 × 10
-4~ 2 × 10
-4handkerchief, after 2 hours, takes out sample.
4., as claimed in claim 3 based on the preparation method of the ultraviolet light detector of palladium/tin ash/silicon heterogenous, it is characterized in that: described in step (3) and (5) prepare tin dioxide thin film (4) and palladium chtalyst layer (5) is at ambient temperature.
5., as claimed in claim 3 based on the preparation method of the ultraviolet light detector of palladium/tin ash/silicon heterogenous, it is characterized in that: the tin dioxide thin film (4) described in step (3) does not need annealed process.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489694A (en) * | 2016-01-14 | 2016-04-13 | 中国石油大学(华东) | Zinc oxide/silicon p-n heterojunction ultraviolet light detector and preparation method thereof |
| CN113136547A (en) * | 2021-04-14 | 2021-07-20 | 山东省科学院能源研究所 | Tin dioxide oxide film, preparation method and application thereof in hydrogen detection |
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| CN101807611A (en) * | 2010-04-01 | 2010-08-18 | 中国石油大学(华东) | Palladium-doped carbon film material with photovoltaic effect |
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| CN113136547A (en) * | 2021-04-14 | 2021-07-20 | 山东省科学院能源研究所 | Tin dioxide oxide film, preparation method and application thereof in hydrogen detection |
| CN113136547B (en) * | 2021-04-14 | 2022-09-16 | 山东省科学院能源研究所 | Tin dioxide oxide film, preparation method and application thereof in hydrogen detection |
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