CN105489695A - Titanium dioxide porous membrane/silicon n-n heterojunction-based ultraviolet detector and preparation method thereof - Google Patents
Titanium dioxide porous membrane/silicon n-n heterojunction-based ultraviolet detector and preparation method thereof Download PDFInfo
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- CN105489695A CN105489695A CN201610021356.2A CN201610021356A CN105489695A CN 105489695 A CN105489695 A CN 105489695A CN 201610021356 A CN201610021356 A CN 201610021356A CN 105489695 A CN105489695 A CN 105489695A
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 63
- 239000010703 silicon Substances 0.000 title claims abstract description 63
- 239000012528 membrane Substances 0.000 title claims abstract description 53
- 239000004408 titanium dioxide Substances 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000004544 sputter deposition Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000004528 spin coating Methods 0.000 claims abstract description 9
- 230000004044 response Effects 0.000 claims abstract description 8
- 238000011084 recovery Methods 0.000 claims abstract description 7
- 230000035945 sensitivity Effects 0.000 claims abstract description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 11
- 229910052763 palladium Inorganic materials 0.000 claims description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 235000019441 ethanol Nutrition 0.000 claims description 7
- 125000005909 ethyl alcohol group Chemical group 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 238000013019 agitation Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 206010034960 Photophobia Diseases 0.000 claims description 4
- 208000013469 light sensitivity Diseases 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 2
- 239000007773 negative electrode material Substances 0.000 claims 2
- 239000007774 positive electrode material Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 239000007772 electrode material Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 230000003321 amplification Effects 0.000 abstract 1
- 238000005265 energy consumption Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 4
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 3
- 238000000825 ultraviolet detection Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000007170 pathology Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 208000017520 skin disease Diseases 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Hybrid Cells (AREA)
Abstract
The invention particularly discloses a high-performance ultraviolet detector of an n-n homotype heterojunction material formed by a titanium dioxide porous membrane and an n-type silicon substrate. The titanium dioxide porous membrane grows on the n-type silicon substrate by a spin-coating method; and then a transmitting metal layer electrode film is prepared on the surface of the titanium dioxide porous membrane through a mask and a sputtering method. The titanium dioxide porous membrane/silicon n-n heterojunction-based ultraviolet detector prepared by the amplification effect of the titanium dioxide porous membrane/silicon n-n heterojunction has the characteristics of simplicity in technology, low cost, low energy consumption, high sensitivity and short response and recovery time, has good detection performance on ultraviolet light, and has an important application prospect.
Description
Technical field
The invention belongs to sensor field, be specifically related to a kind of ultraviolet light detector based on titanium dioxide porous membrane/silicon n-n heterojunction and preparation method thereof.
Background technology
Ultraviolet detection technology is a new technology based on the propagation in atmosphere of ultraviolet radiation and attenuation characteristic and high-performance ultraviolet transducer.Infraredly to compare with Laser Detection Technique with traditional, ultraviolet detection technology is in many aspects by peculiar advantage, and this also makes it all to have a wide range of applications value in a lot of occasions.The application wide range of ultraviolet detection technology, can be used for detection solar ultraviolet radiation intensity, can directly see pathology details during checkout and diagnosis skin disease, can also be used to [optical technology, 1998,02:88-91] such as the pathologies of detection cell.
Semiconductor type sensor have easy-to-use, cost is low, to match etc. with modern electronics industry advantage, day by day becomes the emphasis of people's research.Metal-oxide semiconductor (MOS) ultraviolet light detector because device preparation is simple, the environmental protection life-span is long, cost is low, the reaction response time is than very fast, consistency and repeatability is better etc. that plurality of advantages has become the focus studied in ultraviolet light detector.Especially titanium dioxide nano material, has caused and has paid close attention to widely.X.D.Li etc. [NanoEnergy, 2012,1 (4): 640-645] use TiO
2nano thin-film has prepared the self-powered ultraviolet light detector of photochemical cell structure, and device has very high photoelectric respone.At present, improve sensitivity, the response of metal-oxide semiconductor (MOS) ultraviolet light detector and remain main goal in research recovery time.
In the present invention, we utilize the enlarge-effect of titanium dioxide porous membrane/silicon n-n heterojunction, have developed a kind of titanium dioxide porous membrane/silicon dissimilar materials with ultraviolet sensitivity characteristic, the sensitiveness of titanium dioxide to ultraviolet light can be made greatly to improve.Such as, result shows under the ultraviolet lighting of 0.1 milliwatt every square centimeter, and when reverse voltage 2 volts, the ratio of photoelectric current and dark current is maximum, are respectively fastest response time and recovery time ~ 0.01 and ~ 0.01 second; Under the different monochromatic light of 0.1 milliwatt every square centimeter shine, under reverse voltage, the photoelectric current of ultraviolet light is maximum.Therefore, this heterojunction is the highest to ultraviolet light sensitivity; Under the different monochromatic light of 0.1 milliwatt every square centimeter shine, under reverse voltage 2 volts, the sensitivity of heterojunction to ultraviolet light is the highest, and on-off ratio is ~ 5300%.
Titanium dioxide porous membrane/silicon n-n heterojunction utilizes the enlarge-effect of titanium dioxide porous membrane/silicon n-n heterojunction, and improve the responsiveness of device, device performance is significantly improved.Therefore, titanium dioxide porous membrane/silicon n-n heterojunction shows unique application prospect in ultraviolet light detector making.
Summary of the invention
The object of the invention is to provide a kind of based on titanium dioxide porous membrane/silicon n-n heterojunction ultraviolet photo-detector and preparation method thereof.
The present invention adopts the N-shaped silicon having silicon dioxide to cover as substrate, prepares ultraviolet light detector using titanium dioxide porous membrane as basis material, make use of the enlarge-effect of titanium dioxide porous membrane/silicon n-n heterojunction.The technique of simultaneously inventing employing is simple, room temperature condition detection and with semiconductor planar process compatible, be easy to integrated, be suitable for producing in enormous quantities, thus there is important using value.
Ultraviolet light detector of the present invention comprise successively from top to bottom retain silicon dioxide oxide layer N-shaped silicon base, adopt the nano titanium dioxide porous film that spin-coating method and annealing process grow in N-shaped silicon base, the transparent metal layer electrode film utilizing mask and DC magnetron sputtering method to prepare on nano titanium dioxide porous film; Indium point electrode on transparent metal layer electrode film and indium metal layer electrode respectively as positive and negative electrode, extracting power supply cord, DC power supply and ammeter are connected in series connection, and the voltage of DC power supply is-2 volts; The N-shaped silicon base thickness wherein covering silicon dioxide is 0.5 ~ 2 millimeter, and the thickness of nano titanium dioxide porous film is 100 nanometers, and the thickness of transparent metal layer electrode film is 20 nanometers.
Preparation method based on titanium dioxide porous membrane/silicon n-n heterojunction ultraviolet photo-detector of the present invention, its step is as follows:
(1) process of N-shaped silicon base
First in ultrasonic wave, clean N-shaped silicon base 10-20 minute with deionized water, then in ultrasonic wave, clean N-shaped silicon base 10-20 minute with acetone, finally use washes of absolute alcohol N-shaped silicon base 10-20 minute again; Dry, repeat above-mentioned cleaning process again.
(2) preparation of titanium dioxide porous membrane
First in beaker, add at ambient temperature about 15 ~ 20 milliliter absolute ethyl alcohols, then add in absolute ethyl alcohol by 5 ~ 10 milliliters of butyl titanates, magnetic agitation 20 ~ 40 minutes, obtains yellow solution A; While A liquid stirs, carry out the preparation of B solution, 2 ~ 4 ml deionized water, 8 ~ 10 milliliters of acetic acid, 8 ~ 10 milliliters of absolute ethyl alcohols are mixed in beaker, then adds 1 ~ 3g polyvinylpyrrolidone, stir and make it abundant dissolving; Maintaining under the condition stirred, B solution being slowly added dropwise in solution A, completely after mixing, continuing magnetic agitation 30 minutes; Cleaned N-shaped silicon base is put into spin coating instrument, and draw 5 ~ 15 Al of Solution and drip to N-shaped silicon base central authorities, spin speed 5000 ~ 10000 rpms, spin-coating time 50 seconds, obtains titanium deoxid film.To place it in the drying box of 40 ~ 60 DEG C dry 20 ~ 40 minutes.Dried titanium deoxid film is placed in the annealing of 800 DEG C, tube furnace, is incubated two hours, obtains titanium dioxide porous membrane.
(3) preparation of transparent metal layer electrode film
There is the N-shaped silicon base of titanium dioxide porous membrane to put into sputtering chamber growth, utilize pumped vacuum systems to make sputtering chamber be in vacuum state, until background vacuum reaches target vacuum ~ 2.0 × 10
-4handkerchief, passes into argon gas to sputtering chamber.When pressure is stabilized in 2 handkerchief, direct current magnetron sputtering process is utilized to sputter Metal Palladium, wherein Metal Palladium purity used is 99.9% (mass fraction), and sputtering direct voltage, sputtering direct current and sputtering time are respectively 0.26 kilovolt, 0.20 ampere and 2 minutes; After sputtering, stop passing into argon gas, background vacuum reaches 1.5 × 10
-4handkerchief, maintained after 2 hours, took out sample.
Can obtain titanium dioxide porous membrane/silicon n-n heterojunction material by said process like this, this material has ultraviolet-sensitive effect.Result shows under the ultraviolet lighting of 0.1 milliwatt every square centimeter, and when reverse voltage 2 volts, the ratio of photoelectric current and dark current is maximum, are respectively fastest response time and recovery time ~ 0.01 and ~ 0.01 second; Under the different monochromatic light of 0.1 milliwatt every square centimeter shine, under reverse voltage, the photoelectric current of ultraviolet light is maximum.Therefore, this heterojunction is the highest to ultraviolet light sensitivity; Under the different monochromatic light of 0.1 milliwatt every square centimeter shine, under reverse voltage 2 volts, the sensitivity of heterojunction to ultraviolet light is the highest, and on-off ratio is ~ 5300%.
Titanium dioxide porous membrane provided by the present invention/silicon n-n heterojunction material, can develop ultraviolet detector device with it, and the power consumption of this device is low, and technique is simple, highly sensitive, and response, recovery time are short.
Accompanying drawing explanation
The structural representation of Fig. 1 device of the present invention.
The surface topography (a) of Fig. 2 titanium dioxide porous membrane and cross-section morphology (b).
Fig. 3 take n-type silicon chip as the volt-ampere characteristic of the titanium dioxide porous membrane/silicon n-n heterojunction of substrate at room temperature, under dark condition and under different uv power.
Fig. 4 with n-type silicon chip be the titanium dioxide porous membrane/silicon n-n heterojunction of substrate at ambient temperature, under dark condition and different operating voltage, current change curve in time.
Fig. 5 take n-type silicon chip as the titanium dioxide porous membrane/volt-ampere characteristic of silicon n-n heterojunction at room temperature and under the monochromatic light of different wave length of substrate.
Fig. 6 take n-type silicon chip as the titanium dioxide porous membrane/silicon n-n heterojunction of the substrate on-off ratio curve of (0.1 milliwatt every square centimeter) under different wave length monochromatic light.
As shown in Figure 1, each component names is: N-shaped silicon base 4, indium metal layer 5, the Keithley digital sourcemeter 2602B6 of indium point electrode 1, transparent metal layer electrode film 2, titanium dioxide porous membrane 3, reservation silicon dioxide oxide layer;
Embodiment
We have chosen thickness be the monocrystalline silicon piece of 0.5 millimeter as substrate, retain its natural oxidizing layer.Use deionized water, acetone, absolute ethyl alcohol cleaning silicon chip 20 minutes in ultrasonic wave successively, after oven dry, repeated washing process again.
Adopt spin-coating method and annealing process to prepare titanium dioxide porous membrane: first to instill 18.95 milliliters of absolute ethyl alcohols at beaker, under room temperature condition, then by 8.31 milliliters of butyl titanate instillation absolute ethyl alcohols, magnetic agitation 30 minutes, obtains yellow solution A; While A liquid stirs, carry out the preparation of B solution, 3.51 ml deionized water, 9.75 milliliters of acetic acid, 9.48 milliliters of absolute ethyl alcohols are mixed in beaker, then adds 2 grams of polyvinylpyrrolidones, stir and make it abundant dissolving; Maintaining under the condition stirred, B solution being slowly added drop-wise in solution A, after instillation, continuing magnetic agitation 30 minutes; Cleaned N-shaped silicon base is put into spin coating instrument, the resistivity of N-shaped silicon base is 1-3 ohmcm, draw 15 Al of Solution with pipettor and be added drop-wise to the N-shaped silicon base central authorities that size is 10 × 10 square millimeters, select spin speed 8000 rpms, spin-coating time 50 seconds; Obtain titanium deoxid film, put it in drying baker and carry out drying, then drying grown afterwards and have the N-shaped silicon base of titanium deoxid film to put into tube furnace, in nitrogen protection gas, under 800 degrees Celsius, insulation obtains titanium dioxide porous membrane 3 for two hours.
Mask and direct current magnetron sputtering process is adopted to prepare palladium metal electrode layer: the N-shaped silicon base of growth titanium dioxide porous membrane to be put into sputtering chamber, utilizes pumped vacuum systems to make sputtering chamber be in vacuum state, until background vacuum reaches target vacuum 2.0 × 10
-4argon gas is passed into during handkerchief left and right; Under the prerequisite of maintenance 2 handkerchief pressure, start the sputtering of palladium target, wherein palladium target purity used is 99.9% (mass fraction), and sputtering direct voltage, sputtering direct current and sputtering time are respectively 0.26 kilovolt, 0.20 ampere and 2 minutes; After treating that above work completes, pass into argon gas no longer wherein, again utilize pumped vacuum systems to make background vacuum reach 1.5 × 10
-4handkerchief, after 2 hours, takes out sample.Thickness 20 nanometer of palladium membranes 2; The area of silicon chip 4 and titanium dioxide porous membrane 3 is 1 cm x 1 centimetre, and the area of palladium membranes 2 is 0.5 cm x 0.5 centimetre.
Indium point electrode 1 on palladium membranes 2 and indium metal layer 5 are respectively as positive and negative electrode, and at 1,2 contact place connecting power lines, Keithley digital sourcemeter 2602B6 is connected in series connection, and direct current power source voltage is-2 volts.A kind of ultraviolet light detector with titanium dioxide porous membrane/silicon n-n heterojunction is prepared complete, and its structure as shown in Figure 1.
As shown in Figure 2, titanium dioxide porous membrane surface topography is porous membrane, and cross-section morphology shows that thickness is 100nm.
As shown in Figure 3, the titanium dioxide porous membrane/volt-ampere characteristic of silicon n-n heterojunction under different uv power under room temperature, dark and different ultraviolet light luminous power.Result shows the increase along with uv power, and photoelectric current is increasing, and be greater than 2 volts at reverse voltage, photoelectric current tends towards stability.
As shown in Figure 4, under room temperature, dark condition and different operating voltage, the current versus time curve of titanium dioxide porous membrane/silicon n-n heterojunction.Result shows under the ultraviolet lighting of 0.1 milliwatt every square centimeter, and when reverse voltage 2 volts, the ratio of photoelectric current and dark current is maximum, are respectively fastest response time and recovery time ~ 0.01 and ~ 0.01 second.
As shown in Figure 5, at room temperature, under dark condition and different wave length monochromatic light, the volt-ampere characteristic of titanium dioxide porous membrane/silicon n-n heterojunction.Result shows that under reverse voltage, the photoelectric current of ultraviolet light is maximum under the different monochromatic light of 0.1 milliwatt every square centimeter shine.Therefore, this heterojunction is the highest to ultraviolet light sensitivity.
As shown in Figure 6, under room temperature and different wave length monochromatic light, the on-off ratio curve of titanium dioxide porous membrane/silicon n-n heterojunction.Result shows, under the different monochromatic light of 0.1 milliwatt every square centimeter shine, under reverse voltage 2 volts, the sensitivity of heterojunction to ultraviolet light is the highest, and on-off ratio is ~ 5300%.
Claims (5)
1. ultraviolet light detector based on titanium dioxide porous membrane/silicon n-n heterojunction and preparation method thereof,
Comprise N-shaped silicon base (4), the indium metal layer (5) of indium point electrode (1), transparent metal layer electrode film (2), titanium dioxide porous membrane (3), reservation silicon dioxide oxide layer from top to bottom successively; Be connected in series indium point electrode (positive electrode material) (1) and indium metal layer (negative electrode material) (5) and Keithley digital sourcemeter 2602B (6), voltage is-2.0 volts;
Under the ultraviolet lighting of 0.1 milliwatt every square centimeter, when reverse voltage 2 volts, the ratio of photoelectric current and dark current is maximum, are respectively fastest response time and recovery time ~ 0.01 and ~ 0.01 second; Under the different monochromatic light of 0.1 milliwatt every square centimeter shine, under reverse voltage, the photoelectric current of ultraviolet light is maximum, and this heterojunction is the highest to ultraviolet light sensitivity; Under the different monochromatic light of 0.1 milliwatt every square centimeter shine, under reverse voltage 2 volts, the sensitivity of heterojunction to ultraviolet light is the highest, and on-off ratio is ~ 5300%.
2. the ultraviolet light detector and preparation method thereof of titanium dioxide porous membrane/silicon n-n heterojunction as claimed in claim 1, it is characterized in that: the N-shaped silicon base (4) of titanium dioxide porous membrane (3) and reservation silicon dioxide oxide layer forms n-n homotype heterojunction structure, the thickness of titanium dioxide porous membrane (3) is 100 nanometers, the thickness of transparent metal layer electrode film (2) is 20 nanometers, and the thickness retaining the N-shaped silicon base (4) of silicon dioxide oxide layer is 0.5 ~ 2 millimeter, resistivity is 1-3 ohmcm.
3. ultraviolet light detector based on titanium dioxide porous membrane/silicon n-n heterojunction as claimed in claim 1 and preparation method thereof, is characterized in that: positive electrode and negative electrode material can be the metal electrode material such as gold, silver, indium; Transparent metal layer can be the metal material such as palladium, copper.
4. ultraviolet light detector based on titanium dioxide porous membrane/silicon n-n heterojunction as claimed in claim 1 and preparation method thereof,
Its preparation methods steps is as follows:
(1) first in ultrasonic wave, clean N-shaped silicon base 10-20 minute with deionized water, then in ultrasonic wave, clean N-shaped silicon base 10-20 minute with acetone, finally use washes of absolute alcohol N-shaped silicon base 10-20 minute again; Dry, repeat above-mentioned cleaning process again;
(2) in beaker, add about 15 ~ 20 milliliter absolute ethyl alcohols under room temperature condition, then add in absolute ethyl alcohol by 5 ~ 10 milliliters of butyl titanates, magnetic agitation 20 ~ 40 minutes, obtains yellow solution A;
(3) while A liquid stirs, carry out the preparation of B solution, 2 ~ 4 ml deionized water, 8 ~ 10 milliliters of acetic acid, 8 ~ 10 milliliters of absolute ethyl alcohols are mixed in beaker, then adds 1 ~ 3g polyvinylpyrrolidone, stir and make it abundant dissolving;
(4) under maintaining the condition stirred, B solution is slowly added dropwise in solution A, after mixing, continues magnetic agitation 30 minutes;
(5) cleaned N-shaped silicon base is put into spin coating instrument, draw 5 ~ 15 Al of Solution and drip to N-shaped silicon base central authorities, spin speed 5000 ~ 10000 rpms, spin-coating time 50 seconds, obtain titanium deoxid film, to place it in the drying box of 40 ~ 60 DEG C dry 20 ~ 40 minutes;
(6) dried titanium deoxid film is placed in the annealing of 800 DEG C, tube furnace, is incubated two hours, obtains titanium dioxide porous membrane;
(7) there is the N-shaped silicon base of titanium dioxide porous membrane to put into sputtering chamber growth, utilize pumped vacuum systems to make sputtering chamber be in vacuum state, until background vacuum reaches target vacuum ~ 2.0 × 10
-4handkerchief, argon gas is passed into sputtering chamber, when pressure is stabilized in 2 handkerchief, direct current magnetron sputtering process is utilized to sputter Metal Palladium, wherein Metal Palladium purity used is 99.9% (mass fraction), and sputtering direct voltage, sputtering direct current and sputtering time are respectively 0.26 kilovolt, 0.20 ampere and 2 minutes; After sputtering, stop passing into argon gas, background vacuum reaches 1.5 × 10
-4handkerchief, maintained after 2 hours, took out sample.
5. ultraviolet light detector based on titanium dioxide porous membrane/silicon n-n heterojunction as claimed in claim 1 and preparation method thereof, it is characterized in that: the titanium dioxide porous membrane (3) described in step (6) is through 800 DEG C of annealing, and in step (7), transparent metal layer electrode film (2) is at ambient temperature.
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