CN105229910A - 电力转换装置 - Google Patents

电力转换装置 Download PDF

Info

Publication number
CN105229910A
CN105229910A CN201380076700.2A CN201380076700A CN105229910A CN 105229910 A CN105229910 A CN 105229910A CN 201380076700 A CN201380076700 A CN 201380076700A CN 105229910 A CN105229910 A CN 105229910A
Authority
CN
China
Prior art keywords
circuit
bridge arm
arm unit
switch element
power inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201380076700.2A
Other languages
English (en)
Other versions
CN105229910B (zh
Inventor
大西悠季生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Publication of CN105229910A publication Critical patent/CN105229910A/zh
Application granted granted Critical
Publication of CN105229910B publication Critical patent/CN105229910B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/02—Details
    • H02H3/025—Disconnection after limiting, e.g. when limiting is not sufficient or for facilitating disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/1213—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for DC-DC converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
    • H02H7/1225—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters responsive to internal faults, e.g. shoot-through
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1588—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08148—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)

Abstract

本发明的电力转换装置仅在功率半导体元件的短路时实现电路的断路并在与蓄电池保险丝的熔断相比而较早的时间点上实现电路的断路，所述电力转换装置具备：一对功率半导体元件，其为被串联连接正极电极与负极电极之间的上桥臂元件以及下桥臂元件；短路检测电路，其对下桥臂元件的短路进行检测；保险丝用开关元件，其介于上桥臂元件的正极电极侧的正极侧端子与下桥臂元件的负极电极侧的负极侧端子之间，并在短路的检测时以使正极侧端子与负极侧端子连接的方式而被驱动；断路部，其由使负极侧端子与负极电极连接的金属细线构成。

Description

电力转换装置
技术领域
本发明涉及一种电力转换装置，尤其涉及一种在构成一对功率半导体元件的下桥臂元件的短路时使电路迅速地断路方面为优选的电力转换装置。
背景技术
一直以来，已知一种在功率半导体元件的短路时使电路断路的电力转换装置(例如，参照专利文献1)。在该电力转换装置中，功率半导体元件经由金属细线而与正极端子连接，并且经由金属细线而与负极端子连接。在该构造中，当功率半导体元件短路时，将会流过额定电流的几倍到几十倍的过电流，从而金属细线会通过其自发热而熔断。因此，在功率半导体元件的短路时能够使电路迅速地断路，从而能够阻止过电流的流通。
在先技术文献
专利文献
专利文献1：日本特开2008-235502号公报
发明内容
发明所要解决的课题
可是，例如在上述的电力转换装置被搭载于车辆上的情况下，在功率半导体元件的短路时，如果设置在上流侧的蓄电池保险丝熔断，则此后将不能继续进行利用蓄电池而进行的行驶。因此，在避免该事态的发生这方面，要求在功率半导体元件的短路时，在与蓄电池保险丝的熔断相比而较早的时间点上实施金属细线的熔断。但是，即使按照该要求来设定金属细线的熔断特性，但作为该熔断特性，在通常使用区域中产生了脉动或过渡电流时使金属细线不熔断较为困难。
本发明是鉴于上述情况而完成的，其目的在于，提供一种能够仅在功率半导体元件的短路时实现电路的断路并在与蓄电池保险丝的熔断相比而较早的时间点上实现电路的断路的电力转换装置。
用于解决课题的方法
上述的目的通过以下电力转换装置来实现，所述电力转换装置具备：一对功率半导体元件，其为被串联连接在正极电极与负极电极之间的上桥臂元件以及下桥臂元件；短路检测电路，其对所述下桥臂元件的短路进行检测；保险丝用开关元件，其介于所述上桥臂元件的所述正极电极侧的正极侧端子与所述下桥臂元件的所述负极电极侧的负极侧端子之间，并在所述短路的检测时以使所述正极侧端子与所述负极侧端子连接的方式而被驱动；断路部，其由使所述负极侧端子和所述负极电极连接的金属细线构成。
发明效果
根据本发明，能够使电路的断路仅在功率半导体元件的短路时被实现并在与蓄电池保险丝的熔断相比而较早的时间点上被实现。
附图说明
图1为作为本发明的一个实施例的电力转换装置的电路结构图。
图2为本实施例的电力转换装置所具备的功率模块的构造图。
图3为在本实施例的电力转换装置中被执行的控制程序的一个示例的流程图。
图4为表示本实施例的电力转换装置所具备的保险丝用开关元件的特性的图。
图5为用于对在本实施例的电力转换装置中通过保险丝用开关元件的导通驱动而使电路断路的情况进行说明的电路结构图。
图6为在本实施例中电路被断路之前和之后的电力转换装置的主要部分剖视图。
图7为作为本发明的改变例的电力转换装置的电路结构图。
具体实施方式
以下，使用附图来对本发明所涉及的电力转换装置的具体的实施方式进行说明。
图1表示作为本发明的一个实施例的电力转换装置10的电路结构图。此外，图2表示本实施例的电力转换装置10所具备的功率模块的构造图。另外，在图2(A)中图示了功率模块的俯视图，在图2(B)中图示了图2(A)所示的功率模块的III-III剖视图，此外，在图2(C)中图示了图2(B)所示的功率模块的主要部分的放大剖视图。
本实施例的电力转换装置10为，例如被搭载于电动汽车或混合动力车辆上并对车载蓄电池的电力进行转换而向驱动用电机等进行供给的装置。如图1所示，电力转换装置10具备车载蓄电池12、升压电路14、倒相电路16。
车载蓄电池12为能够进行充放电的锂离子电池或镍氢电池等，且为例如能够输出240伏的直流电压的高压蓄电池。在车载蓄电池12的输出端连接有蓄电池保险丝18。蓄电池保险丝18为具有如下熔断特性的保险丝，所述熔断特性为，在电力转换装置10的通常使用区域中不熔断，而在流通了规定以上的电流的情况下通过自发热而进行熔断。
升压电路14为，经由蓄电池保险丝18而与车载蓄电池12连接并使从车载蓄电池12被供给的输入电压升压至预定的直流电压(例如，650伏)的电路。此外，倒相电路16为，与升压电路14连接并将从升压电路14被供给的直流电压转换为交流电压的电路。在倒相电路16上，连接有驱动用电机等的负载。该负载通过从倒相电路16被供给的交流电力而进行工作。
另外，上述的驱动用电机等的负载也作为发电机而发挥功能。在负载作为发电机而发挥功能时，倒相电路16将从负载侧被供给的交流电压转换为直流电压并向升压电路14进行供给，升压电路14使从倒相电路16被供给的直流电压降压至预定的直流电压(与车载蓄电池12的电压匹配的电压)。在该情况下，车载蓄电池12能够对通过负载而发生的电力进行积蓄。
升压电路14具有滤波电容器20、电抗器22、一对功率半导体元件24、26、以及平滑电容器28。滤波电容器20为，与车载蓄电池12并联连接并使从车载蓄电池12向升压电路14供给的输入电压稳定化的电容器。电抗器22被构成为，一端与车载蓄电池12的正极端子连接，另一端与一对功率半导体元件24、26彼此的共用连接点CL连接。电抗器22具有在车载蓄电池12侧与倒相电路16侧之间实施电压转换时进行电力的释放以及积蓄的作用。
一对功率半导体元件24、26为，被串联连接在正极电极P与负极电极N之间的上桥臂元件以及下桥臂元件。作为与正极电极P连接的上桥臂元件的功率半导体元件24，由作为实施开关动作的开关元件的绝缘栅双极性晶体管(IBGT)24a、被并联连接在IGBT24a的集电极与发射极之间的二极管24b构成。二极管24b容许电流从IGBT24a的发射极E向集电极C的流通。
此外，作为与负极电极N连接的下桥臂元件的功率半导体元件26，由作为实施开关动作的开关元件的绝缘栅双极性晶体管(IBGT)26a、被并联连接在IGBT26a的集电极与发射极之间的二极管26b构成。二极管26b容许电流从IGBT26a的发射极E向集电极C的流通。上述的电抗器22的另一端与IGBT24a的发射极以及IGBT26a的集电极连接。
平滑电容器28为，连接在正极电极P与负极电极N之间，并使正极电极P与负极电极N之间的电压、即升压电路14的输出平滑化的电容器。正极电极P和负极电极N与倒相电路16连接。倒相电路16将正极电极P与负极电极N之间的直流电压转换为交流电压并向驱动用电机等负载进行供给。
此外，电力转换装置10具备开关元件30，开关元件30介于上桥臂元件24的正极电极P侧的正极侧端子(即，IGBT24a的集电极C)与下桥臂元件26的负极电极N侧的负极侧端子(即，IGBT26a的发射极E)之间。开关元件30为，通过在下桥臂元件26的短路时被导通驱动而使电路断路的保险丝用元件。以下，将开关元件30称作保险丝用开关元件30。
保险丝用开关元件30为，能够承受在正极电极P与负极电极N之间产生的电压(例如，650伏)的高耐压小电容的绝缘栅双极性晶体管(IBGT)。保险丝用开关元件30被构成为，集电极C与上桥臂元件24的正极侧端子(即，IGBT24a的集电极C以及正极电极P)连接，且发射极E与下桥臂元件26的负极侧端子(即，IGBT26a的发射极E)连接。
保险丝用开关元件30的发射极E与下桥臂元件26的负极侧端子连接，并且与负极电极N连接。保险丝用开关元件30的发射极E与下桥臂元件26的负极侧端子通过作为金属细线的接合线32而被连接。此外，保险丝用开关元件30的发射极E与负极电极N通过作为金属细线的接合线34而被连接。接合线32、34例如由铝或铜、金等构成。
升压电路14的上桥臂元件24以及下桥臂元件26和保险丝用开关元件30分别为，如图2所示的搭载于被树脂模压的功率模块40上的半导体元件，并由被形成为薄壁的矩形形状的半导体芯片而构成。功率模块40为，在作为金属板的引线框42上装载有上桥臂元件24的IGBT24a以及二极管24b、且在作为金属板的引线框44上装载有下桥臂元件26的IGBT26a以及二极管26b的状态下被树脂密封的模块。功率模块40具有由环氧树脂等树脂而构成的树脂部46，并被形成为大致矩形形状。
功率模块40以如下方式被安装，即，与上桥臂元件24的正极侧端子连接的正极电极P的一部分(以下，称作正极突出部50)向外部突出，下桥臂元件26的负极侧端子的一部分(以下，称作负极突出部52)向外部突出，并且，作为上桥臂元件24与下桥臂元件26的共用连接点CL的连接电极的一部分(以下，称作连接突出部54)向外部突出。此外，功率模块40以如下方式被安装，即，对上桥臂元件24的IGBT24a以及下桥臂元件26的IGBT26a进行驱动控制或用于实施电流检测的控制电极的一部分(以下，称作控制突出部56)向外部突出。
在功率模块40中，正极突出部50与负极突出部52以相互邻接的方式而被接近配置。正极突出部50具有主体部50a、从该主体部50a进一步突起的突起部50b。突起部50b在负极突出部52的顶端的外侧以与该负极突出部52的顶端邻接的方式而配置。在突起部50b上，装载有保险丝用开关元件30。保险丝用开关元件30以集电极与突起部50b的表面接触且发射极向表面露出的方式通过焊锡等而被固定于突起部50b上。负极突出部52与保险丝用开关元件30的发射极通过接合线32而被连接。
负极电极N在正极突出部50的突起部50b的外侧以与该突起部50b邻接的方式而配置。负极电极N与保险丝用开关元件30的发射极通过接合线34而被连接。负极突出部52与正极突出部50的突起部50b和负极电极N，通过由环氧树脂等树脂构成的壳体58而被模压。保险丝用开关元件30以及接合线32、34通过被插入壳体58内的凝胶状部件60而被保护。
电力转换装置10具备对上桥臂元件24的IGBT24a进行驱动控制的上桥臂用驱动IC70、和对下桥臂元件26的IGBT26a进行PWM驱动控制的下桥臂用驱动IC72。上桥臂用驱动IC70向IGBT24a的栅极输出栅极信号，以便对IGBT24a的驱动实施PWM控制。此外，下桥臂用驱动IC72向IGBT26a的栅极输出栅极信号，以便对IGBT26a的驱动实施PWM控制。
在上述的电力转换装置10中，当电抗器22中被输入了来自车载蓄电池12的电压时，通过使电流按照车载蓄电池12的正极端子→电抗器22→上桥臂元件24的二极管24b→正极电极P→负载侧→负极电极N→车载蓄电池12的负极端子的顺序进行流通，从而对电抗器22进行充电。
当从该状态起通过来自下桥臂用驱动IC72的栅极信号而使下桥臂元件26的IGBT26a被导通驱动时，由于电流按照车载蓄电池12的正极端子→电抗器22→下桥臂元件26的IGBT26a→接合线32→保险丝用开关元件30的发射极→接合线34→负极电极N→车载蓄电池12的负极端子的顺序进行流通，从而该电流量会随着时间的经过而直线性地增加，并且，随着该电流量的增加从而使电抗器22被进一步充电。此时，由于平滑电容器28被放电，从而维持了向负载侧的电力供给。
接下来，当下桥臂元件26的IGBT26a被断开驱动时，由于电流按照车载蓄电池12的正极端子→电抗器22→上桥臂元件24的二极管24b→正极电极P→负载侧→负极电极N→车载蓄电池12的负极端子的顺序进行流通，从而该电流量会随着时间的经过而直线性地减少，并且，随着该电流量的减少从而使电抗器22被放电。
当实施该处理时，升压电路14的输出电压与车载蓄电池12的输出电压相比而升高，从而平滑电容器28被充电至该电压为止，并且维持了向负载侧的电力供给。此后，通过重复实施下桥臂元件26的IGBT26a的导通、断开，从而升压电路14继续朝向负载侧输出与车载蓄电池12的输出电压相比而较高的电压。
此外，在倒相电路16将从作为发电机的负载侧被供给的交流电压转换为直流电压的情况下，当通过来自上桥臂用驱动IC70的栅极信号而使上桥臂元件24的IGBT24a被导通驱动时，通过向电抗器22、滤波电容器20、以及车载蓄电池12施加电压，从而电抗器22通过由倒相电路16产生的直流电压与滤波电容器20的电压之间的差分的电压而被充电。此时，由于电流按照倒相电路16侧→正极电极P→上桥臂元件24的IGBT24a→电抗器22→滤波电容器20以及车载蓄电池12的顺序进行流通，从而该电流量会随着时间的经过而直线性地增加。
接下来，当上桥臂元件24的IGBT24a被断开驱动时，电抗器22通过并联连接的滤波电容器20的电压而被放电。此时，由于电流按照电抗器22→滤波电容器20以及车载蓄电池12→负极电极N→接合线34→保险丝用开关元件30的发射极→接合线32→下桥臂元件26的二极管26b的顺序进行流通，从而该电流量会随着时间的经过而直线性地减少。
当实施该处理时，升压电路14的输出电压与由倒相电路16产生的直流电压相比而降低，从而滤波电容器20以及车载蓄电池12被充电至该电压为止。此后，通过重复实施上桥臂元件24的IGBT24a的导通、断开，从而升压电路14继续朝向车载蓄电池12侧输出与由倒相电路16产生的直流电压相比而较低的电压。
图3为表示在本实施例的电力转换装置10中被执行的控制程序的一个示例的流程图。
在本实施例的电力转换装置10中，上桥臂元件24的IGBT24a具有对集电极电流进行分流的感应发射极SE。该感应发射极SE具有将集电极电流分流为极小的电流(例如，相对于全部发射极电流为几千分之一的电流)的功能。在感应发射极SE上连接有电流感应电阻74。电流感应电阻74具有电阻值Rs，并具有将在感应发射极SE中流动的感应电流转换为感应电压Vs的功能、即作为发射极电压而进行提取的功能。
通过电流感应电阻74而对感应电流进行了转换的感应电压Vs被供给至比较器76。比较器76为，根据感应电压Vs来辨别在正极电极P与负极电极N之间的电路中是否流动有预定以上的电流(即，过电流)，并对是否存在正极电极P与负极电极N之间的短路(具体而言为，上桥臂元件24的IGBT24a被导通驱动时在下桥臂元件26的IGBT26a中产生的短路)进行检测的比较器。
比较器76的输出信号被供给至上桥臂用驱动IC70。在将对上桥臂元件24的IGBT24a进行导通驱动的栅极信号对于该IGBT24a而进行输出的状况(步骤100的肯定判断时)下，上桥臂用驱动IC70根据来自比较器76的信号，来辨别在正极电极P与负极电极N之间的电路中流动的电流ISE是否为预定阈值ISH以上(步骤110)。另外，预定阈值ISH为，会被判断为产生了正极电极P与负极电极N之间的短路从而在电路中流有过电流的最小的电流值。
在上桥臂用驱动IC70辨别为正极电极P与负极电极N之间的电路中流动的电流ISE为预定阈值ISH以上的情况下，判断为正极电极P与负极电极N发生短路，且在上桥臂元件24的IGBT24a被导通驱动时下桥臂元件26的IGBT26a中产生了短路(步骤120)，并产生使保险丝用开关元件30导通驱动的驱动信号(步骤130)。
在上桥臂用驱动IC70的输出侧连接有光电耦合器78的输入侧。上桥臂用驱动IC70将以上述方式而生成的驱动信号对光电耦合器78进行输出。在光电耦合器78的输出侧连接有浮动电源80，并且，连接有光电耦合器82的输入侧。光电耦合器78为，利用光而使来自上桥臂用驱动IC70的驱动信号电绝缘并将之向光电耦合器82进行传递的元件。在光电耦合器82的输出侧连接有下桥臂用驱动IC72的输入侧。光电耦合器82为，利用光而使来自光电耦合器78的传递信号电绝缘并将之向其下桥臂用驱动IC72进行传递的元件。
在下桥臂用驱动IC72上连接有上述的保险丝用开关元件30的栅极。下桥臂用驱动IC72根据经由光电耦合器78、82的来自上桥臂用驱动IC70的驱动信号，而对正极电极P与负极电极N之间的短路进行检测，并生成应当向保险丝用开关元件30的栅极供给的栅极信号。具体而言，在正极电极P与负极电极N短路，且上桥臂用驱动IC70输出使保险丝用开关元件30导通驱动的驱动信号的情况下，生成使该保险丝用开关元件30导通驱动的栅极信号。
图4为表示本实施例的电力转换装置10所具备的保险丝用开关元件30的特性的图。图5为用于对在本实施例的电力转换装置10中通过保险丝用开关元件30的导通驱动而使电路断路的情况进行说明的电路结构图。此外，图6图示了在本实施例中电路被断路之前和之后的电力转换装置10的主要部分剖视图。
在本实施例中，当生成使保险丝用开关元件30导通驱动的栅极信号时，下桥臂用驱动IC72将该栅极信号对保险丝用开关元件30的栅极而进行输出。此时，下桥臂用驱动IC72使保险丝用开关元件30在非饱和区域内导通驱动。例如，保险丝用开关元件30的栅极与发射极之间的电压被设定为，作为该非饱和区域的9伏。
当保险丝用开关元件30被导通驱动时，在图5以及图6(A)中如箭头所示，电流按照正极电极P→保险丝用开关元件30的集电极→发射极→接合线34→负极电极N的顺序流动。此外，当保险丝用开关元件30在非饱和区域被导通驱动时，在该保险丝用开关元件30的自身中将产生过大的电力损失，以至于该保险丝用开关元件30将会热损坏。
当保险丝用开关元件30热损坏时，通过由该热损坏而产生的冲击，从而使对该保险丝用开关元件30与负极电极N进行连接的接合线34断裂(图6(B))。当接合线34断裂时，由于正极电极P与负极电极N之间的电路被断路，因此，正极电极P与负极电极N之间的短路被消除。
在该电路断路的结构中，对于在下桥臂元件26的IGBT26a的短路时实现电路断路，不需要通过自发热而使下桥臂元件26的负极电极N侧的负极侧端子(即，IGBT26a的发射极E)与负极电极N之间的接合线32、34熔断，只要使保险丝用开关元件30在非饱和区域导通驱动就足够了。
关于这一点，根据本实施例，由于能够使接合线32、34的熔断特性与蓄电池保险丝18的熔断特性同样地从通常使用区域可靠地避开，因此，能够防止在通常使用时于产生脉动或过渡电流时使接合线32、34错误地熔断的情况，并能够确保接合线32、34对于脉动或过渡电流的耐性。
此外，在上述的电路断路的结构中，对于在下桥臂元件26的IGBT26a的短路时实现电路断路，只需在检测到正极电极P与负极电极N之间的短路的基础上，使保险丝用开关元件30在非饱和区域导通驱动就足够了。当上桥臂元件24的IGBT24a被导通驱动时，如果下桥臂元件26的IGBT26a发生短路，则在该短路的发生于上桥臂用驱动IC70中被检测到之后，经由光电耦合器78、82而向下桥臂用驱动IC72传递，而且，该下桥臂用驱动IC72使保险丝用开关元件30导通驱动。
关于这一点，根据本实施例，由于下桥臂元件26的IGBT26a的短路时的电路断路并不是通过由接合线34的自发热所实施的熔断来实现的，而是通过由因非饱和区域内的导通驱动而使保险丝用开关元件30自身热损坏的冲击实施的接合线34的断裂来实现的，因此，能够响应性较佳且迅速地实施该电路断路。
因此，根据本实施例的电力转换装置10，能够仅在下桥臂元件26的IGBT26a的短路时实现正极电极P与负极电极N之间的电路断路并在与蓄电池保险丝18的熔断相比而较早的时间点上实现正极电极P与负极电极N之间的电路断路。因此，根据本实施例，能够避免正极电极P与负极电极N之间的电路断路因下桥臂元件26的IGBT26a的短路以外的主要原因而被实施，从而能够避免在该下桥臂元件26的IGBT26a的短路时蓄电池保险丝18被熔断的情况。
另外，在本实施例中，由于在通常使用时，电流在桥臂元件26→接合线32→保险丝用开关元件30的发射极→接合线34→负极电极N的路径中流通，因此，电路的电感比较低，从而能够抑制在该电路中产生的损失。因此，根据本实施例的电力转换装置10，能够将通常使用时的电路损失抑制得较低。
此外，在本实施例中，由于保险丝用开关元件30为在下桥臂元件26的IGBT26a的短路时在非饱和区域被导通驱动的半导体元件，因此，只要在实现其功能的方面具有低电流电容就够了。因此，根据本实施例的电力转换装置10，能够避免导致保险丝用开关元件30的大型化，能够实现该装置10自身的小型化。
此外，在本实施例中，使电路断路的接合线34并不是在功率模块40的主体侧使用环氧树脂等而被树脂模压了的线材，而是通过凝胶状部件60而被保护的线材。因此，根据本实施例，与接合线34被树脂模压的结构不同，能够防止因树脂模压而使得在接合线34处使电路断裂变得困难的情况，在这一点上，也能够避免在下桥臂元件26的IGBT26a的短路时蓄电池保险丝18被熔断的情况。
另外，在上述的实施例中，上桥臂元件24的IGBT24a的感应发射极SE、电流感应电阻74、比较器76、以及上桥臂用驱动IC70相当于权利要求书中所记载的“短路检测电路”，接合线34相当于权利要求书中所记载的“断路部”，上桥臂用驱动IC70以及下桥臂用驱动IC72相当于权利要求书中所记载的“保险丝驱动电路”。
另外，在上述的实施例中，在对下桥臂元件26的短路进行检测时，使用了在上桥臂元件24的IGBT24a的感应发射极SE中流动的电流。但是，本发明并不限定于此，如图7所示，也可以在电力转换装置100上新设置保险丝IC102，并在对下桥臂元件26的短路进行检测时，使用在下桥臂元件26的集电极与发射极之间的电压。
在该改变例中，保险丝IC102只要在监视下桥臂元件26的集电极与发射极之间的电压的基础上，例如通过DESAT等方法而对下桥臂元件26的短路进行检测即可。在该情况下，保险丝IC102只要在下桥臂元件26的短路检测时使保险丝用开关元件30在非饱和区域导通驱动即可。在该改变例中，也能够获得与上述实施例同样的效果。另外，在该改变例中，保险丝IC102相当于权利要求书中所记载的“短路检测电路”。
此外，在上述的实施例中，对构成升压电路14的下桥臂元件26的短路进行了检测。但是，本发明并不限定于此，也可以应用于对构成倒相电路16的桥臂元件的短路进行检测的构件中。
此外，在上述的实施例中，作为具有功率半导体、即上桥臂元件24以及下桥臂元件26的开关元件而使用了IGBT24a、26a。但是，本发明并不限定于此，也可以使用功率MOSFET。
此外，在上述的实施例中，设为将电力转换装置10搭载于电动汽车或混合动力车辆上。但是，本发明并不限定于此，也可以设为搭载在车辆以外的装置上。
符号说明
10：电力转换装置；
12：车载蓄电池；
14：升压电路；
16：倒相电路；
18：蓄电池保险丝；
24：上桥臂元件；
26：下桥臂元件；
30：保险丝用开关元件；
32、34：接合线；
40：功率模块；
70：上桥臂用驱动IC；
72：下桥臂用驱动IC；
P：正极电极；
N：负极电极；
CL：共用连接点。

Claims (10)

1.一种电力转换装置，其特征在于，具备：
一对功率半导体元件，其为被串联连接在正极电极与负极电极之间的上桥臂元件以及下桥臂元件；
短路检测电路，其对所述下桥臂元件的短路进行检测；
保险丝用开关元件，其介于所述上桥臂元件的所述正极电极侧的正极侧端子与所述下桥臂元件的所述负极电极侧的负极侧端子之间，并在所述短路的检测时以使所述正极侧端子与所述负极侧端子连接的方式而被驱动；及
断路部，其由使所述负极侧端子和所述负极电极连接的金属细线构成。
2.如权利要求1所述的电力转换装置，其特征在于，具备：
保险丝驱动电路，其在通过所述短路检测电路而检测出所述短路时，对所述保险丝用开关元件进行导通驱动。
3.如权利要求2所述的电力转换装置，其特征在于，
所述保险丝驱动电路在非饱和区域对所述保险丝用开关元件进行导通驱动。
4.如权利要求1至3中的任意一项所述的电力转换装置，其特征在于，
所述保险丝用开关元件为，能够耐受所述正极电极与所述负极电极之间的电压的高耐压小电容的绝缘栅双极性晶体管。
5.如权利要求4所述的电力转换装置，其特征在于，
所述保险丝用开关元件以集电极与所述正极侧端子连接且发射极与所述负极侧端子连接的方式而被安装，
并且，作为所述断路部的金属细线介于所述保险丝用开关元件的发射极与所述负极电极之间。
6.如权利要求5所述的电力转换装置，其特征在于，
所述负极侧端子与所述保险丝用开关元件的发射极经由金属细线而被连接。
7.如权利要求1至6中的任意一项所述的电力转换装置，其特征在于，
所述短路检测电路基于所述上桥臂元件的导通驱动时流过感应发射极的电流，来对所述下桥臂元件的短路进行检测。
8.如权利要求1至6中的任意一项所述的电力转换装置，其特征在于，
所述短路检测电路基于所述下桥臂元件的集电极与发射极之间的电压，来对该下桥臂元件的短路进行检测。
9.如权利要求1至8中的任意一项所述的电力转换装置，其特征在于，
所述一对功率半导体元件为，搭载于被树脂模压的功率模块上的元件。
10.如权利要求1至9中的任意一项所述的电力转换装置，其特征在于，
所述一对功率半导体元件为，构成升降压电路或倒相电路的元件。
CN201380076700.2A 2013-05-22 2013-05-22 电力转换装置 Active CN105229910B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/064254 WO2014188538A1 (ja) 2013-05-22 2013-05-22 電力変換装置

Publications (2)

Publication Number Publication Date
CN105229910A true CN105229910A (zh) 2016-01-06
CN105229910B CN105229910B (zh) 2017-11-28

Family

ID=51933127

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380076700.2A Active CN105229910B (zh) 2013-05-22 2013-05-22 电力转换装置

Country Status (5)

Country Link
US (1) US9627957B2 (zh)
JP (1) JP6061029B2 (zh)
CN (1) CN105229910B (zh)
DE (1) DE112013007105B4 (zh)
WO (1) WO2014188538A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112910234A (zh) * 2019-12-04 2021-06-04 大众汽车股份公司 升压转换器和运行升压转换器的方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2545236B (en) * 2015-12-10 2017-12-13 Rolls Royce Plc A method of controlling an inverter
JP6376199B2 (ja) * 2016-10-17 2018-08-22 マツダ株式会社 車両の電源供給装置
JP6800723B2 (ja) * 2016-12-05 2020-12-16 株式会社ミツトヨ エンコーダ及びエンコーダの光源
CN108879904A (zh) * 2018-08-22 2018-11-23 成都信息工程大学 一种车载充电机变流电路
EP3691127A1 (de) * 2019-01-31 2020-08-05 Siemens Aktiengesellschaft Sicherer elektronischer schalter
JP7142751B1 (ja) * 2021-07-05 2022-09-27 三菱電機株式会社 電力変換装置、及び遮断機構

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08126304A (ja) * 1994-10-28 1996-05-17 Toshiba Emi Ltd スイッチング電源
JP2008235502A (ja) * 2007-03-20 2008-10-02 Mitsubishi Electric Corp 樹脂封止型半導体装置
CN101382585A (zh) * 2007-09-07 2009-03-11 比亚迪股份有限公司 一种电机中逆变器的测试方法、装置及电机
JP2010015831A (ja) * 2008-07-03 2010-01-21 Sumitomo Heavy Ind Ltd 充放電システムの異常判定方法及び異常判定装置
US20120153719A1 (en) * 2009-07-23 2012-06-21 Hitachi Automotive Systems, Ltd. Semiconductor Element Control Device and In-Vehicle Electrical System
CN102822967A (zh) * 2010-04-01 2012-12-12 日立汽车系统株式会社 功率模块、以及具备功率模块的电力变换装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006280014A (ja) 2005-03-25 2006-10-12 Fuji Xerox Co Ltd 電源装置の保護回路
EP2428387A4 (en) 2009-04-23 2017-03-22 Toyota Jidosha Kabushiki Kaisha Power supply system of electric vehicle and control method thereof
JP5720641B2 (ja) * 2012-08-21 2015-05-20 株式会社デンソー スイッチングモジュール
FR3000322B1 (fr) * 2012-12-21 2016-05-20 Schneider Electric Ind Sas Dispositif de protection contre une surintensite electrique d'au moins une branche electronique de commutation, systeme de conversion comportant un tel dispositif de protection, et procede de pilotage associe
JP5915775B2 (ja) * 2012-12-25 2016-05-11 トヨタ自動車株式会社 半導体装置
JP2014166033A (ja) * 2013-02-25 2014-09-08 Toyota Motor Corp 電源装置
US9653999B2 (en) * 2013-06-24 2017-05-16 Toyota Jidosha Kabushiki Kaisha Power supply apparatus
WO2015145679A1 (ja) * 2014-03-27 2015-10-01 株式会社日立製作所 電力変換ユニット、電力変換装置、及び電力変換装置の製造方法
DE102015103247A1 (de) * 2015-03-05 2016-09-08 Ge Energy Power Conversion Technology Limited Schaltmodul mit Kurzschlussschutz und Leistungselektronikmodul mit diesem

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08126304A (ja) * 1994-10-28 1996-05-17 Toshiba Emi Ltd スイッチング電源
JP2008235502A (ja) * 2007-03-20 2008-10-02 Mitsubishi Electric Corp 樹脂封止型半導体装置
CN101382585A (zh) * 2007-09-07 2009-03-11 比亚迪股份有限公司 一种电机中逆变器的测试方法、装置及电机
JP2010015831A (ja) * 2008-07-03 2010-01-21 Sumitomo Heavy Ind Ltd 充放電システムの異常判定方法及び異常判定装置
US20120153719A1 (en) * 2009-07-23 2012-06-21 Hitachi Automotive Systems, Ltd. Semiconductor Element Control Device and In-Vehicle Electrical System
CN102822967A (zh) * 2010-04-01 2012-12-12 日立汽车系统株式会社 功率模块、以及具备功率模块的电力变换装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112910234A (zh) * 2019-12-04 2021-06-04 大众汽车股份公司 升压转换器和运行升压转换器的方法

Also Published As

Publication number Publication date
DE112013007105B4 (de) 2021-08-05
JPWO2014188538A1 (ja) 2017-02-23
US20160072401A1 (en) 2016-03-10
US9627957B2 (en) 2017-04-18
CN105229910B (zh) 2017-11-28
JP6061029B2 (ja) 2017-01-18
WO2014188538A1 (ja) 2014-11-27
DE112013007105T5 (de) 2016-03-10

Similar Documents

Publication Publication Date Title
CN105229910A (zh) 电力转换装置
WO2020259104A1 (zh) 开关控制装置及方法、电机控制器和电池组加热控制系统
US10023052B2 (en) Power supply system
CN107820658A (zh) 控制装置、蓄电装置、蓄电系统以及控制方法
CN102412722A (zh) Dc－dc转换器
US20220385096A1 (en) Battery control circuit, battery, and related electronic device
JP5206198B2 (ja) 電力変換回路の駆動回路
CN102969918B (zh) 三相桥式逆变器系统及紧急下短路保护电路
CN104704589B (zh) 用于为中间电路电容器充电的电路装置和方法及具有该电路装置的蓄电池和机动车
JP5720641B2 (ja) スイッチングモジュール
CN104393761A (zh) 控制电路、集成电路和应用其的开关型变换器
EP3722142B1 (en) Electric vehicle power relay assembly and driving method therefor
CN109104886A (zh) 逆变器装置
JP2019004595A (ja) 車両の電源装置
CN105915092A (zh) 电力转换装置
CN108475911B (zh) 供电控制装置
CN118753056A (zh) 一种车辆、充电装置、电机控制电路
CN109952698A (zh) Dcdc转换器
US9160192B2 (en) Charging circuit with inductance-based current limiting and method for operating such circuit
CN113746152A (zh) 电池能量处理装置和车辆
TWI676038B (zh) 動態特性測試裝置及動態特性測試方法
CN105896940B (zh) 电力转换装置
CN205239171U (zh) Dcdc主电路及电车供电电路
CN208241316U (zh) 一种充电机的放电电路
CN108521846A (zh) 电力转换装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20200408

Address after: Aichi Prefecture, Japan

Patentee after: DENSO Corp.

Address before: Aichi Prefecture, Japan

Patentee before: Toyota Motor Corp.

TR01 Transfer of patent right