CN105226130A - 成像探测器及其制造方法 - Google Patents
成像探测器及其制造方法 Download PDFInfo
- Publication number
- CN105226130A CN105226130A CN201410243348.3A CN201410243348A CN105226130A CN 105226130 A CN105226130 A CN 105226130A CN 201410243348 A CN201410243348 A CN 201410243348A CN 105226130 A CN105226130 A CN 105226130A
- Authority
- CN
- China
- Prior art keywords
- layer
- interconnected pores
- dielectric layer
- reflector
- thermistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410243348.3A CN105226130B (zh) | 2014-06-03 | 2014-06-03 | 成像探测器及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410243348.3A CN105226130B (zh) | 2014-06-03 | 2014-06-03 | 成像探测器及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105226130A true CN105226130A (zh) | 2016-01-06 |
CN105226130B CN105226130B (zh) | 2017-03-29 |
Family
ID=54994964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410243348.3A Active CN105226130B (zh) | 2014-06-03 | 2014-06-03 | 成像探测器及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105226130B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109132994A (zh) * | 2018-07-11 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | Mems电极微桥形成方法 |
CN111106205A (zh) * | 2019-11-29 | 2020-05-05 | 中国科学院微电子研究所 | 硅基光子器件及其制造方法 |
CN113031250A (zh) * | 2019-12-09 | 2021-06-25 | 觉芯电子(无锡)有限公司 | 一种具有创新电互连结构的微镜装置及制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1405892A (zh) * | 2002-11-15 | 2003-03-26 | 清华大学 | 硅基薄膜晶体管室温红外探测器 |
US20060166483A1 (en) * | 2003-02-03 | 2006-07-27 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device and semiconductor device obtained by using such a method |
CN101713688A (zh) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | 一种mems非制冷双波段红外探测器及其制备方法 |
CN202453088U (zh) * | 2011-11-03 | 2012-09-26 | 无锡萌涉传感技术有限公司 | 一种光谱微测辐射热计 |
-
2014
- 2014-06-03 CN CN201410243348.3A patent/CN105226130B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1405892A (zh) * | 2002-11-15 | 2003-03-26 | 清华大学 | 硅基薄膜晶体管室温红外探测器 |
US20060166483A1 (en) * | 2003-02-03 | 2006-07-27 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device and semiconductor device obtained by using such a method |
CN101713688A (zh) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | 一种mems非制冷双波段红外探测器及其制备方法 |
CN202453088U (zh) * | 2011-11-03 | 2012-09-26 | 无锡萌涉传感技术有限公司 | 一种光谱微测辐射热计 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109132994A (zh) * | 2018-07-11 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | Mems电极微桥形成方法 |
CN111106205A (zh) * | 2019-11-29 | 2020-05-05 | 中国科学院微电子研究所 | 硅基光子器件及其制造方法 |
CN113031250A (zh) * | 2019-12-09 | 2021-06-25 | 觉芯电子(无锡)有限公司 | 一种具有创新电互连结构的微镜装置及制作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105226130B (zh) | 2017-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9029212B2 (en) | MEMS pressure sensors and fabrication method thereof | |
US6359276B1 (en) | Microbolom infrared sensors | |
US9676615B2 (en) | MEMS silicone microphone and manufacturing method thereof | |
US20160112807A1 (en) | Mems microphone structure and method of manufacturing the same | |
CN104280161A (zh) | 压力传感器及其形成方法 | |
US9875965B2 (en) | Semiconductor device | |
CN104692319B (zh) | 对封装应力不敏感的mems芯片的制造方法及其mems芯片 | |
CN105430581B (zh) | 一种麦克风结构的形成方法 | |
US9716141B2 (en) | Applications for nanopillar structures | |
CN105226130A (zh) | 成像探测器及其制造方法 | |
US9511998B2 (en) | MEMS device having a getter | |
CN103204461B (zh) | 半导体结构及其形成方法 | |
CN105261622A (zh) | 一种成像探测器的制造方法 | |
CN210193393U (zh) | 一种mems结构 | |
CN102891158B (zh) | 一种背照式cmos图像传感器的制造方法 | |
KR101408904B1 (ko) | 고온 공정이 가능한 mems 디바이스 제조방법 | |
CN101183658A (zh) | 沟槽的制造方法及其应用于制造图像传感器方法 | |
CN102285637A (zh) | 带侧壁保护的腔体制造方法 | |
CN209815676U (zh) | 一种mems结构 | |
CN204214578U (zh) | 空腔薄膜压阻式压力传感器 | |
CN103633106B (zh) | Cmos感光器件接触孔刻蚀方法及cmos感光器件制造方法 | |
CN209835625U (zh) | Mems器件 | |
US7395706B2 (en) | Micro sample heating apparatus and method of making the same | |
CN104163398B (zh) | 半导体器件中深槽的填充结构及其填充方法 | |
CN102034756B (zh) | 图像传感器的互连封装方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190902 Address after: 323000 Room 307, Block B, 268 Shiniu Road, Nanmingshan Street, Liandu District, Lishui City, Zhejiang Province Patentee after: Zhejiang Core Microelectronics Co.,Ltd. Address before: 201203 Shanghai City, Pudong New Area Shanghai Zhangjiang hi tech park, long East Road No. 3000 Building No. 5 room 501B Patentee before: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230217 Address after: 201203 501b, building 5, No. 3000, Longdong Avenue, Pudong New Area, Shanghai Patentee after: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. Address before: 323000 room 307, block B, building 1, No.268 Shiniu Road, nanmingshan street, Liandu District, Lishui City, Zhejiang Province Patentee before: Zhejiang Core Microelectronics Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230519 Address after: 323000 room 307, block B, building 1, No.268 Shiniu Road, nanmingshan street, Liandu District, Lishui City, Zhejiang Province Patentee after: Zhejiang Core Microelectronics Co.,Ltd. Address before: 201203 501b, building 5, No. 3000, Longdong Avenue, Pudong New Area, Shanghai Patentee before: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. |
|
TR01 | Transfer of patent right |