CN105226130B - 成像探测器及其制造方法 - Google Patents
成像探测器及其制造方法 Download PDFInfo
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- CN105226130B CN105226130B CN201410243348.3A CN201410243348A CN105226130B CN 105226130 B CN105226130 B CN 105226130B CN 201410243348 A CN201410243348 A CN 201410243348A CN 105226130 B CN105226130 B CN 105226130B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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CN201410243348.3A CN105226130B (zh) | 2014-06-03 | 2014-06-03 | 成像探测器及其制造方法 |
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CN201410243348.3A CN105226130B (zh) | 2014-06-03 | 2014-06-03 | 成像探测器及其制造方法 |
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CN105226130A CN105226130A (zh) | 2016-01-06 |
CN105226130B true CN105226130B (zh) | 2017-03-29 |
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CN201410243348.3A Active CN105226130B (zh) | 2014-06-03 | 2014-06-03 | 成像探测器及其制造方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109132994A (zh) * | 2018-07-11 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | Mems电极微桥形成方法 |
CN111106205A (zh) * | 2019-11-29 | 2020-05-05 | 中国科学院微电子研究所 | 硅基光子器件及其制造方法 |
CN113031250B (zh) * | 2019-12-09 | 2022-12-30 | 觉芯电子(无锡)有限公司 | 一种具有创新电互连结构的微镜装置及制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1405892A (zh) * | 2002-11-15 | 2003-03-26 | 清华大学 | 硅基薄膜晶体管室温红外探测器 |
CN101713688A (zh) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | 一种mems非制冷双波段红外探测器及其制备方法 |
CN202453088U (zh) * | 2011-11-03 | 2012-09-26 | 无锡萌涉传感技术有限公司 | 一种光谱微测辐射热计 |
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KR20050095643A (ko) * | 2003-02-03 | 2005-09-29 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 반도체 장치 제조 방법 및 이러한 방법을 이용하여얻어지는 반도체 장치 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1405892A (zh) * | 2002-11-15 | 2003-03-26 | 清华大学 | 硅基薄膜晶体管室温红外探测器 |
CN101713688A (zh) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | 一种mems非制冷双波段红外探测器及其制备方法 |
CN202453088U (zh) * | 2011-11-03 | 2012-09-26 | 无锡萌涉传感技术有限公司 | 一种光谱微测辐射热计 |
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Effective date of registration: 20190902 Address after: 323000 Room 307, Block B, 268 Shiniu Road, Nanmingshan Street, Liandu District, Lishui City, Zhejiang Province Patentee after: Zhejiang Core Microelectronics Co.,Ltd. Address before: 201203 Shanghai City, Pudong New Area Shanghai Zhangjiang hi tech park, long East Road No. 3000 Building No. 5 room 501B Patentee before: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. |
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Effective date of registration: 20230217 Address after: 201203 501b, building 5, No. 3000, Longdong Avenue, Pudong New Area, Shanghai Patentee after: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. Address before: 323000 room 307, block B, building 1, No.268 Shiniu Road, nanmingshan street, Liandu District, Lishui City, Zhejiang Province Patentee before: Zhejiang Core Microelectronics Co.,Ltd. |
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Effective date of registration: 20230519 Address after: 323000 room 307, block B, building 1, No.268 Shiniu Road, nanmingshan street, Liandu District, Lishui City, Zhejiang Province Patentee after: Zhejiang Core Microelectronics Co.,Ltd. Address before: 201203 501b, building 5, No. 3000, Longdong Avenue, Pudong New Area, Shanghai Patentee before: LEXVU OPTO MICROELECTRONICS TECHNOLOGY (SHANGHAI) Ltd. |