CN105197880A - Bonding method of wafers with cavities - Google Patents
Bonding method of wafers with cavities Download PDFInfo
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- CN105197880A CN105197880A CN201410286773.0A CN201410286773A CN105197880A CN 105197880 A CN105197880 A CN 105197880A CN 201410286773 A CN201410286773 A CN 201410286773A CN 105197880 A CN105197880 A CN 105197880A
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Abstract
The invention discloses a bonding method of wafers with cavities and a product manufactured by means of the method. By means of the method, the problem that the bonding quality is poor due to residual liquid is solved, and a good basis is provided for achieving high-quality cavity bonding. The bonding method of the wafers with the cavities comprises the steps that a, prewashing is conducted on the two wafers to be bonded to form hydrophilic groups beneficial for bonding; b, the two wafers to be bonded are aligned; c, the aligned wafers are put into a bonding chamber, and the bonding chamber is vacuumized and heated to remove liquid residual on the surfaces of the wafers.
Description
Technical field
The present invention relates to field of semiconductor manufacture, the product that the bonding method particularly relating to band cavity wafer manufactures according to the method.
Background technology
Bonding (bonding) refers to the process being connected two or more substrate or wafer (such as chip glass or silicon wafer) by various chemistry with physical action, mainly comprises gluing bonding, anode linkage, eutectic bonding, melting bonding, glass paste bonding, metal diffusion interlinked etc.Along with developing rapidly of the 3D manufacturing technologies such as silicon through hole (TSV), MEMS, the requirement of para-linkage technology and bonding quality is also got up further in detail and strictly.
Bonding chip (waferbonding) is very important sport technique segment during MEMS (MEMS) device manufactures.Vacuum bonding (vacuumbonding) is the class important branch in bonding techniques.For the development in recent years device such as pressure sensor, oscillator rapidly, their common features all need to form a vacuum cavity after bonding, and the vacuum in cavity has very important effect to guarantee device performance index.
Along with the develop rapidly of micromachining technology, occurred a kind of novel bonding techniques---Si-Si direct bonding technology, it refers to and silicon chip and the material tight such as silicon chip, oxide layer is joined together to form an overall method by chemistry and the effect of physics.Surface Machining and body processing can organically combine by it, occupy an important position in micromachined.It is often combined with other means, both can form micro-structural, is formed support and protection micro-structural, and the electricity that can realize again between micro mechanical structure or between micro mechanical structure and circuit connects.
Such as, based in the cavity devices Si-Si bonding process of melting bonding principle, first, cleaning process is in advance carried out.Its objective is the hydrophilic group being beneficial to bonding in the silicon wafer surface formation through plasma treatment.The final step of cleaning in advance is generally the centrifugal force (Rotary drying or drying) utilizing chuck High Rotation Speed to produce, and the deionized water of wafer surface remnants is dried.
Fig. 1 illustrates the cross-sectional view of the cavity body structure formed by Si-Si bonding process.As can be seen from Figure 1, between two wafer 101 and 104 of bonding, there is large-area cavity 102 and the marking groove (scribelane) 103 with certain depth.Therefore, at wash phase in advance, only use Rotary drying cannot remove the deionized water remained in large area cavity and deep trench completely.This not only affects after bonding completes, and the vacuum of cavity devices and bonding quality, also because of liquid residue in cavity, leave hidden danger safely to device.
At present, for the bonding technology of cavity devices, the melting bonding technology method that general employing is traditional, not yet has cavity devices bonding special process targetedly.
Equally, residual liquid minimizing technology mainly relies on Rotary drying to realize.The cavity devices that, area high for depth-to-width ratio is large, because the raffinate linear velocity in the different radii upper plenum of wafer is different, cannot rely on and extend rotational time or improve the means solutions such as rotary rpm.Such as, rotating the central area of wafer, the linear velocity of residual liquid is relatively slow, therefore relatively many at central area cavity residual liquid, and when carrying out melting bonding to this wafer, the Liquid Residue in this region knows from experience the large stretch of space of generation, causes bonding failure.
In addition, the restriction of subject wafer bonding technology condition, generally also cannot apply the methods such as isopropyl alcohol (IPA) drying.
Fig. 2 illustrates traditional Si-Si bonding process flow chart.
First, in step 201, two wafer surface carrying out bonding are cleaned in advance, at least one wherein in these two wafers, be formed with the structure such as cavity, groove.The bonding surface of wash phase wafer in advance introduces deionized water, thus is formed with the hydrophilic group being beneficial to bonding.Then, the centrifugal force utilizing the High Rotation Speed of wafer chuck to produce, dries the residual level of wafer surface.
In step 202, by two wafer aligned to be bonded.
In step 203, two wafer surface of aiming at are coincided together.The hydrogen bond of wafer surface is utilized to carry out bonding.
In step 204, two wafers through bonding are checked.
In step 205, high annealing is carried out to form the stronger siloxane bond of bond energy (Si-O-Si) to two wafers through bonding.
Utilize traditional silicon silicon cavity bonding technology to test, find: to experimental result after analyzing under traditional Si-Si bonding process condition, change bonding force, bonding time and surface treatment condition, the improvement effect of para-linkage quality is very limited.Residual liquid in the wafer produces large stretch of space.
Therefore, remove the liquid that wash phase is residual in advance and become further important.
Summary of the invention
The object of this invention is to provide a kind of method with cavity bonding chip, the method effectively removes the residual liquid remained in wafer device structure, improves the vacuum after cavity devices bonding and bonding quality, decreases the potential safety hazard of cavity devices simultaneously.
According to one embodiment of present invention, a kind of bonding method of wafer is provided, comprises:
A) clean in advance to be formed with the hydrophilic group being beneficial to bonding to two wafers to be bonded;
B) by two wafer aligned to be bonded;
C) wafer after aligning is put into bonding room, bonding room is vacuumized and heats to remove the residual liquid of wafer surface.
According to one embodiment of present invention, preceding method be also included in step a) before, activation process is carried out to wafer surface to be bonded.
According to one embodiment of present invention, a) clean in advance by deionized water is introduced bonding surface in step.
According to one embodiment of present invention, step c) comprise the following steps in one or more steps:
C1) bonding room vacuumized and keep certain hour;
C2) formation gas is filled with to bonding room;
C3) bonding room be heated at specified temp and keep certain hour;
C4) again bonding room vacuumized and keep certain hour.
According to one embodiment of present invention, step c) be also included in step c4) and be again filled with formation gas to bonding room afterwards, then bonding room vacuumized and keep certain hour.
According to one embodiment of present invention, form the mist that gas can be nitrogen and hydrogen, after being filled with described formation gas, the air pressure of described bonding indoor is at least 800 millibars.
According to one embodiment of present invention, specified temp is between 22 DEG C to 80 DEG C.
According to one embodiment of present invention, specified temp is 60 DEG C.
According to one embodiment of present invention, the wafer after preceding method also comprises para-linkage is annealed.
According to one embodiment of present invention, at least one wafer surface to be bonded has cavity structure.
According to another embodiment of the invention, provide a kind of semiconductor devices, comprise the bonding structure manufactured by preceding method.
Compared with prior art, advantage of the present invention comprises:
Method according to the present invention, for cavity devices bonding performance, proposes to utilize vacuum drying principle in conventional melt bonding technology, solves the difficult problem that raffinate causes bonding quality difference, provides good basis for realizing high-quality cavity bonding.Meanwhile, the method, without the need to newly added equipment, changes little to existing technological process, has the advantages such as cost is low, risk is little, implementation is strong.
Accompanying drawing explanation
In order to illustrate above and other advantage and the feature of various embodiments of the present invention further, present the description more specifically of various embodiments of the present invention with reference to accompanying drawing.Be appreciated that exemplary embodiments of the present invention only described by these accompanying drawings, therefore will not be considered to restriction on its scope.In the accompanying drawings, in order to cheer and bright, be exaggerated the thickness in layer and region.Identical or corresponding parts will represent with same or similar mark.
Fig. 1 illustrates the cross-sectional view of the cavity body structure formed by Wafer Bonding Process.
Fig. 2 illustrates traditional Wafer Bonding Process flow chart.
Fig. 3 A-3G illustrates the schematic diagram of the bonding chip according to one embodiment of the present of invention.
Fig. 4 illustrates the flow chart of Wafer Bonding Process according to an embodiment of the invention.
Fig. 5 illustrates the three-phase diagram of water.
Detailed description of the invention
In the following description, with reference to each embodiment, present invention is described.But, person of skill in the art will appreciate that and can replace when neither one or multiple specific detail or with other and/or implement each embodiment together with addition method, material or assembly.In other situation, not shown or do not describe known structure, material or operation in detail in order to avoid make the aspects of various embodiments of the present invention obscure.Similarly, in order to the object explained, specific quantity, material and configuration are set forth, to provide the complete understanding to embodiments of the invention.But the present invention can implement when not having specific detail.In addition, each embodiment shown in accompanying drawing should be understood be illustrative expression and not necessarily draw in proportion.
Fig. 3 A-3G illustrates the schematic diagram of the bonding chip according to one embodiment of the present of invention.
First, carry out activation process to two wafer surface will carrying out bonding, the surface of at least one in these two wafers is formed with the structure such as cavity, groove.
In the activation process stage of bonding surface, as shown in Figure 3A, utilize nitrogen gas plasma to bombard the surface of silicon wafer, due to autoxidation effect, the surface of silicon wafer has Si-O key.As shown in Figure 3 B, due to plasma bombardment, the part Si-O key in silicon face natural oxidizing layer interrupts, and forms dead key, as shown in Figure 3 C.
Then, carry out wash phase in advance, the wafer surface through plasma treatment introduces deionized water, and make it be combined with Si-dead key, be formed with the hydrophilic group being beneficial to bonding, as shown in Figure 3 D.Deionized water can adopt dropping liquid-spin coating mode to coat on the surface of silicon wafer.Usually utilize the centrifugal force that wafer chuck High Rotation Speed produces in the prior art, surface residual moisture is dried.But for the wafer containing large-area cavity or darker groove, this method cannot remove the residual moisture in cavity or groove completely, thus cause bonding failure.In order to overcome this problem, in an embodiment of the present invention, by vacuumizing-baking-vacuum step in bonding stage increase, removing wash phase in advance and remaining in hydrone in wafer device structure.Bonding process is described in detail below with reference to Fig. 4.The hydrogen bond of wafer surface is utilized to carry out by two bonding chips together in this process, as shown in FIGURE 3 E.
Annealing stage, as illustrated in Figure 3 F, utilizes pyroreaction, forms the siloxane bond (Si-O-Si) that bond energy is stronger, as shown in Figure 3 G.
Fig. 4 illustrates the flow chart of Wafer Bonding Process according to an embodiment of the invention.
First, in step 401, activation process is carried out to two wafer surface will carrying out bonding.In one embodiment, surface active is carried out by N2 plasma bombardment.
In step 402, the wafer through plasma treatment cleans in advance.In one embodiment, by deionized water being introduced bonding surface to be formed with the hydrophilic group being beneficial to bonding.
In step 403, by two wafer aligned to be bonded.In one embodiment, wafer to be bonded can be put into the chuck of wafer aligned machine, utilize alignment machine to complete wafer aligned, then wafer chuck is put into bonding room.
In step 404, bonding room is vacuumized and keeps certain hour.In one embodiment, bonding room can be evacuated to 1 millibar, and keep 5 minutes.
Optionally, in step 405, formation gas can be filled with to bonding room.In one embodiment, the formation gas be filled with is hydrogen and nitrogen, and after being filled with formation gas, the air pressure of bonding room is at least 800 millibars.
In step 406, bonding room is kept 5 minutes at a certain temperature.In one embodiment, this specified temp is between 22 DEG C to 80 DEG C.Such as, this specified temp can be 60 DEG C.
In step 407, again bonding room vacuumized and keep certain hour.In one embodiment, bonding room can be evacuated to 0.01 millibar, and keep 5 minutes.
Optionally, in step 408, again formation gas can be filled with to bonding room.In one embodiment, the formation gas be filled with is hydrogen and nitrogen, and after being filled with formation gas, the air pressure of bonding room is at least 800 millibars.
In step 409, again bonding room vacuumized and keep certain hour.
In one embodiment, in order to reduce the concentration of the steam of bonding indoor further, can repeatedly repeat step 408 and 409.
In step 410, two wafers through bonding are checked.In one embodiment, by scanning electronic microscope observation, between wafer, whether there is large stretch of space.Also can check wafer whether flexural deformation.
In step 411, high annealing is carried out to form the stronger siloxane bond of bond energy (Si-O-Si) to two wafers through bonding.In one embodiment, the annealing temperature of wafer is about 300 DEG C.
Utilize above-mentioned bonding method, by vacuumizing-baking-vacuum step in bonding stage increase, eliminate wash phase in advance and remain in raffinate in wafer device structure, improve the vacuum after cavity devices bonding and bonding quality, decrease the potential safety hazard of cavity devices simultaneously.
As can be seen from the three-phase diagram of the water shown in Fig. 5, in dry run, the vaporization of aqueous water has evaporation and boiling two kinds of modes.The vaporization rate of water when seething with excitement is more faster than the vaporization rate when evaporating, and moisture evaporation becomes steam and can carry out at any temperature.Moisture boiling becomes steam, can only carry out at a certain temperature.But in time reducing pressure, the boiling point of water also reduces.As under 19.6kPa air pressure, the boiling point of water can drop to 60 DEG C.
Therefore, bonding method according to the present invention makes full use of the feature of water under low pressure boiling point reduction, and under the indoor vacuum state formed of bonding, by the heat transfer type such as heat transfer, heat radiation, the enough heats of sustainable supply moisture, promote the boiling of wafer surface residual liquid, accelerate vaporization rate.Meanwhile, vacuumize and extract out fast the steam of vaporization, and form negative pressure state at wafer periphery, make between wafer and surrounding medium, to form larger moist gradient, accelerate vaporization rate, reach quick-drying object.
In step 405 and 408, during bonding, be filled with the object forming gas to bonding room is to make the specific bonding atmosphere of the indoor maintenance of bonding on the one hand, the formation gas be filled with on the other hand can reduce the concentration of bonding indoor water steam and other gaseous impurity, thus is conducive to accelerating dry and providing bonding yield rate.
The foregoing describe some embodiments of the present invention.But the present invention can be embodied as other concrete form and not deviate from its spirit or substantive characteristics.Described embodiment all should be considered to be only illustrative and nonrestrictive in all respects.Therefore, scope of the present invention by appended claims but not aforementioned description limit.Fall in the implication of the equivalents of claims and scope to change contain by the scope of claims.
Claims (11)
1. a bonding method for wafer, comprising:
A) clean in advance to be formed with the hydrophilic group being beneficial to bonding to two wafers to be bonded;
B) by two wafer aligned to be bonded;
C) wafer after aligning is put into bonding room, bonding room is vacuumized and heats to remove the residual liquid of wafer surface.
2. the method for claim 1, be also included in step a) before, activation process is carried out to wafer surface to be bonded.
3. the method for claim 1, is characterized in that, a) cleans in advance by deionized water is introduced bonding surface in step.
4. the method for claim 1, is characterized in that, described step c) comprise the following steps in one or more steps:
C1) bonding room vacuumized and keep certain hour;
C2) formation gas is filled with to bonding room;
C3) bonding room be heated at specified temp and keep certain hour;
C4) again bonding room vacuumized and keep certain hour.
5. method as claimed in claim 4, is characterized in that, described step c) be also included in step c4) be again filled with formation gas to bonding room afterwards, then bonding room vacuumized and keep certain hour.
6. method as claimed in claim 4, it is characterized in that, described formation gas is the mist of nitrogen and hydrogen, and after being filled with described formation gas, the air pressure of described bonding indoor is at least 800 millibars.
7. method as claimed in claim 4, it is characterized in that, described specified temp is between 22 DEG C to 80 DEG C.
8. method as claimed in claim 4, it is characterized in that, described specified temp is 60 DEG C.
9. the method for claim 1, is characterized in that, the wafer also comprised after para-linkage is annealed.
10. the method for claim 1, is characterized in that, at least one wafer surface to be bonded has cavity structure.
11. 1 kinds of semiconductor devices, comprise the bonding structure manufactured by method described in any one in claim 1 to 11.
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| CN201410286773.0A CN105197880B (en) | 2014-06-24 | 2014-06-24 | A kind of bonding method with cavity chip |
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| CN201410286773.0A CN105197880B (en) | 2014-06-24 | 2014-06-24 | A kind of bonding method with cavity chip |
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| CN105197880B CN105197880B (en) | 2018-03-20 |
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Cited By (4)
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| CN107633997A (en) * | 2017-08-10 | 2018-01-26 | 长江存储科技有限责任公司 | A kind of wafer bonding method |
| CN108439814A (en) * | 2018-04-25 | 2018-08-24 | 哈尔滨工业大学 | A kind of plasma-activated Direct Bonding method using vapor pretreating surface |
| WO2020140212A1 (en) * | 2019-01-02 | 2020-07-09 | Yangtze Memory Technologies Co., Ltd. | Plasma activation treatment for wafer bonding |
| CN114777427A (en) * | 2022-05-10 | 2022-07-22 | 星恒电源股份有限公司 | Drying method of square laminated lithium ion battery cell |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107633997A (en) * | 2017-08-10 | 2018-01-26 | 长江存储科技有限责任公司 | A kind of wafer bonding method |
| CN107633997B (en) * | 2017-08-10 | 2019-01-29 | 长江存储科技有限责任公司 | A kind of wafer bonding method |
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| CN108439814A (en) * | 2018-04-25 | 2018-08-24 | 哈尔滨工业大学 | A kind of plasma-activated Direct Bonding method using vapor pretreating surface |
| CN108439814B (en) * | 2018-04-25 | 2021-04-20 | 哈尔滨工业大学 | Plasma activation direct bonding method for surface pretreatment by using water vapor |
| WO2020140212A1 (en) * | 2019-01-02 | 2020-07-09 | Yangtze Memory Technologies Co., Ltd. | Plasma activation treatment for wafer bonding |
| US10790260B2 (en) | 2019-01-02 | 2020-09-29 | Yangtze Memory Technologies Co., Ltd. | Plasma activation treatment for wafer bonding |
| CN114777427A (en) * | 2022-05-10 | 2022-07-22 | 星恒电源股份有限公司 | Drying method of square laminated lithium ion battery cell |
| CN114777427B (en) * | 2022-05-10 | 2023-11-17 | 星恒电源股份有限公司 | Drying method for square laminated lithium ion battery cell |
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