CN108439814A - A kind of plasma-activated Direct Bonding method using vapor pretreating surface - Google Patents
A kind of plasma-activated Direct Bonding method using vapor pretreating surface Download PDFInfo
- Publication number
- CN108439814A CN108439814A CN201810380619.8A CN201810380619A CN108439814A CN 108439814 A CN108439814 A CN 108439814A CN 201810380619 A CN201810380619 A CN 201810380619A CN 108439814 A CN108439814 A CN 108439814A
- Authority
- CN
- China
- Prior art keywords
- plasma
- vapor
- quartz glass
- activated
- bonding method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/006—Other surface treatment of glass not in the form of fibres or filaments by irradiation by plasma or corona discharge
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
Abstract
The invention discloses a kind of plasma-activated Direct Bonding method using vapor pretreating surface, the method specific implementation step is as follows：One, quartz glass to be bonded is placed on the sample stage of vapor treatment and carries out steam treatment；Two, using plasma activates the quartz glass after steam treatment；Three, the quartz glass after will be plasma-activated is bonded, and is stood under atmosphere at room temperature environment；Four, the quartz glass after fitting is kept the temperature.The present invention it is plasma-activated it is preceding quartz glass is handled using vapor, it is plasma-activated compared to single, under identical annealing temperature and annealing time, the bond strength between quartz glass and quartz glass can be significantly increased.
Description
Technical field
The invention belongs to wafer bond techniques fields, are related to a kind of plasma-activated bonding method of glass, and in particular to
A kind of low-temperature direct bonding method plasma-activated using vapor pretreated glass.
Background technology
Glass is the amorphous material for the single component being made of silica, and close structure has fabulous light saturating
The property crossed, coefficient of thermal expansion are extremely low（5.6×10-7/K）, heat resisting temperature is up to 1000 DEG C or more.In addition to hydrofluoric acid, glass at room temperature
Glass is hardly reacted with other acid or alkali, has good chemical stability.Based on above-mentioned advantage possessed by glass, usually
It is applied to imaging sensor, solar cell and fiber waveguide device etc..Wafer bonding refer to by clean surface be bonded after,
Under the action of external energy so that interface, which is formed, to be covalently attached, the process to be combined as a whole.Key between glass and glass
It closes, since the transmission of the light to different-waveband is bigger, high mechanical strength is widely used in the preparation of microfluidic device.
Currently, the bonding method between glass mainly has melting bonding method and plasma-activated bonding method.But melting key
It is legal to usually require to realize higher bond strength under 800 ~ 1000 DEG C of high annealing, easily damage the sensitive member of temperature
The function of device.And plasma-activated bonding method when annealing temperature be less than 250 DEG C when, bond strength is extremely low, or even can not hold
Generated mechanical stress in by subsequent mechanical process.Therefore, the low temperature between glass（≤ 200℃）Bonding is for temperature
The exploitation of sensitive microfluidic device has important research significance with application.
Invention content
Based on the high problem of above-mentioned bonding temperature, the present invention provides a kind of using vapor pretreating surface
Plasma-activated Direct Bonding method.This method can realize glass and glass under the annealing temperature not higher than 200 DEG C
High intensity is bonded.
The purpose of the present invention is what is be achieved through the following technical solutions：
A kind of plasma-activated Direct Bonding method using vapor pretreating surface realizes that low temperature is high according to the following steps
Intensity is bonded：Glass pre-process using vapor treatment → using plasma to the glass of steam treatment into
It anneals under the plasma-activated glass surface → low temperature of row activation → fitting, specific implementation step is as follows：
One, glass to be bonded is placed on the sample stage of vapor treatment and carries out steam treatment, at the vapor
The temperature of reason is 150 ~ 500 DEG C, and the time is 0.5 ~ 30min；
Two, using plasma activates the glass after steam treatment, and the gaseous species of the plasma are O2With
N2, the power of activation process is 50 ~ 300W, and the time is 0.5 ~ 10min；
Three, the glass after will be plasma-activated is bonded, and is stood under atmosphere at room temperature environment, and the time of the standing is
12~72h；
Four, the glass after fitting being kept the temperature, the temperature of the heat preservation is 100 ~ 200 DEG C, the time is 2 ~ for 24 hours.
The bonding principle of the present invention is as follows：
Stress corrosion and the H of water can occur in water vapor atmosphere for glass2O can occur anti-with the Si-O-Si structures of glass surface
It answers：Si-O-Si + H2O → Si-OH+HO-Si, on the one hand so that the Si-OH density of glass surface increases, more
It is hydrophilic；On the other hand, a degree of softening can occur for glass surface, be conducive to the interatomic phase counterdiffusion in interface.Through it is equal from
After daughter processing, the Si-OH density of glass surface can further increase, and surface can become more smooth so that quartz glass is easy
In bonding, and higher bond strength is obtained under process annealing.
Compared with the prior art, the present invention has the following advantages：
The present invention it is plasma-activated it is preceding glass is handled using vapor, it is plasma-activated compared to single,
Under identical annealing temperature and annealing time, the bond strength between glass and glass can be significantly increased.
Description of the drawings
Fig. 1 is the bonding method process flow chart of the present invention；
Fig. 2 is that oxygen plasma activates after pre-processing 10min using oxygen plasma activation and 170 DEG C of vapor in embodiment 1
The pre- bond strength bar chart of glass/glass；
In figure：1 is quartz glass, and 2 be vapor treatment sample stage, and 3 be deionized water, and 4 be culture dish, and 5 be warm table,
6 be plasma-activated device（Manufacturer is Germany Plasmatechnology GmbH, model PlasmaFlecto
10）, 6-1 is activated gas air inlet, and 6-2 is air inlet, and 6-3 is plasma-activated device sample stage, and 6-4 is vacuum
Bleeding point, 6-5 are power supply adaptor, and 7 be heating and thermal insulation stove.
Specific implementation mode
Technical scheme of the present invention is further described with reference to embodiment, however, it is not limited to this, every right
Technical solution of the present invention is modified or replaced equivalently, and without departing from the spirit of the technical scheme of the invention and range, should all be contained
It covers in protection scope of the present invention.
Embodiment 1：
A kind of plasma-activated Direct Bonding method using vapor pretreating surface is present embodiments provided, such as Fig. 1 institutes
Show, specific implementation step is as follows：
（1）Quartz glass is pre-processed using vapor treatment：
Quartz glass to be bonded is placed on the sample stage of vapor treatment, 10min is handled at a temperature of 170 DEG C.
As shown in Figure 1, vapor treatment used in the present embodiment is by warm table, the first culture dish, the second culture dish, sample
Four parts of sample platform form, wherein：The first culture dish and the second culture dish are provided on the warm table, and the first culture dish is set
In in the second culture dish, sample stage is placed in the first culture dish；The manufacturer of the warm table is CHEMAT Co., Ltds, type
Number it is MODEL KW-4AH, heating temperature is controllable at 50 ~ 500 DEG C；First culture dish and the second culture dish be it is cylindric, first
A diameter of 60 ~ 80mm of culture dish is highly 10 ~ 15mm, and wall thickness is 1 ~ 3mm, the diameter of the second culture dish is 100 ~
120mm is highly 20 ~ 25mm, and wall thickness is 1 ~ 3mm；The sample stage be cuboid, length be 30 ~ 50mm, width be 30 ~
50mm is highly 15 ~ 18mm.
（2）Using plasma activates the quartz glass of steam treatment：
Using O2Plasma activates 1 min to the quartz glass after steam treatment under the power of 150W.
（3）It is bonded plasma-activated Quartz glass surfaces：
By O2Quartz glass fitting after plasma-activated, and 24 h are stood under atmosphere at room temperature environment.It can from Fig. 2
Go out, after steam treatment, pre- bond strength is substantially improved.
（4）It anneals under low temperature：
Fitting quartz glass/quartz glass is annealed at a temperature of 150 DEG C, and keeps the temperature 12 h.
Embodiment 2：
A kind of plasma-activated Direct Bonding method using vapor pretreating surface is present embodiments provided, such as Fig. 1 institutes
Show, specific implementation step is as follows：
（1）Quartz glass is pre-processed using vapor treatment：
Quartz glass to be bonded is placed on the sample stage of vapor treatment, 10min is handled at a temperature of 200 DEG C.
（2）Using plasma activates the quartz glass of steam treatment：
Using O2Plasma activates 1 min to the quartz glass after steam treatment under the power of 100 W.
（3）It is bonded plasma-activated Quartz glass surfaces：
By O2Quartz glass fitting after plasma-activated, and stood for 24 hours under atmosphere at room temperature environment.
（4）It anneals under low temperature：
Fitting quartz glass/quartz glass is annealed at a temperature of 150 DEG C, and keeps the temperature 12h.
Embodiment 3：
A kind of plasma-activated Direct Bonding method using vapor pretreating surface is present embodiments provided, such as Fig. 1 institutes
Show, specific implementation step is as follows：
（1）Quartz glass is pre-processed using vapor treatment：
Quartz glass to be bonded is placed on the sample stage of vapor treatment, 15min is handled at a temperature of 150 DEG C.
（2）Using plasma activates the quartz glass of steam treatment：
Using N2Plasma activates 1.5min to the quartz glass after steam treatment under the power of 150W.
（3）It is bonded plasma-activated Quartz glass surfaces：
By N2Quartz glass fitting after plasma-activated, and stand 36h under atmosphere at room temperature environment.
（4）It anneals under low temperature：
Fitting quartz glass/quartz glass is annealed at a temperature of 150 DEG C, and keeps the temperature 12h.
Claims (6)
1. a kind of plasma-activated Direct Bonding method using vapor pretreating surface, it is characterised in that the method has
Body implementation steps are as follows：
One, quartz glass to be bonded is placed on the sample stage of vapor treatment and carries out steam treatment；
Two, using plasma activates the quartz glass after steam treatment；
Three, the quartz glass after will be plasma-activated is bonded, and is stood under atmosphere at room temperature environment；
Four, the quartz glass after fitting is kept the temperature.
2. the plasma-activated Direct Bonding method according to claim 1 using vapor pretreating surface, special
Sign is that the temperature of the steam treatment is 150 ~ 500 DEG C, and the time is 0.5 ~ 30min.
3. the plasma-activated Direct Bonding method according to claim 1 using vapor pretreating surface, special
Sign is that the gaseous species of the plasma are O2And N2。
4. the plasma-activated Direct Bonding method according to claim 1 using vapor pretreating surface, special
Sign is that the power of the activation process is 50 ~ 300W, and the time is 0.5 ~ 10min.
5. the plasma-activated Direct Bonding method according to claim 1 using vapor pretreating surface, special
Sign is that the time of the standing is 12 ~ 72h.
6. the plasma-activated Direct Bonding method according to claim 1 using vapor pretreating surface, special
Sign be the heat preservation temperature be 100 ~ 200 DEG C, the time be 2 ~ for 24 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810380619.8A CN108439814B (en) | 2018-04-25 | 2018-04-25 | Plasma activation direct bonding method for surface pretreatment by using water vapor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810380619.8A CN108439814B (en) | 2018-04-25 | 2018-04-25 | Plasma activation direct bonding method for surface pretreatment by using water vapor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108439814A true CN108439814A (en) | 2018-08-24 |
| CN108439814B CN108439814B (en) | 2021-04-20 |
Family
ID=63201082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810380619.8A Active CN108439814B (en) | 2018-04-25 | 2018-04-25 | Plasma activation direct bonding method for surface pretreatment by using water vapor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108439814B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109081595A (en) * | 2018-09-30 | 2018-12-25 | 江苏耀兴安全玻璃有限公司 | A kind of preparation method of devitrified glass |
| CN110473778A (en) * | 2019-08-17 | 2019-11-19 | 哈尔滨工业大学 | A method of utilizing plasma-activated Direct Bonding zirconium oxide and aluminum oxide |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101990697A (en) * | 2008-04-10 | 2011-03-23 | 信越化学工业株式会社 | Method for manufacturing bonded substrate |
| US20110290320A1 (en) * | 2006-10-30 | 2011-12-01 | Shin-Etsu Chemical Co., Ltd. | Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
| CN105016632A (en) * | 2015-06-12 | 2015-11-04 | 哈尔滨工业大学深圳研究生院 | Method of cryogenic surface activation direct bonding for preparation of quartz glass capillary tube |
| CN105161437A (en) * | 2015-09-18 | 2015-12-16 | 北京工业大学 | Plasma-assisted glass or quartz chip microstructure alignment and pre-bonding method |
| CN105197880A (en) * | 2014-06-24 | 2015-12-30 | 中芯国际集成电路制造(上海)有限公司 | Bonding method of wafers with cavities |
-
2018
- 2018-04-25 CN CN201810380619.8A patent/CN108439814B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110290320A1 (en) * | 2006-10-30 | 2011-12-01 | Shin-Etsu Chemical Co., Ltd. | Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
| CN101990697A (en) * | 2008-04-10 | 2011-03-23 | 信越化学工业株式会社 | Method for manufacturing bonded substrate |
| CN105197880A (en) * | 2014-06-24 | 2015-12-30 | 中芯国际集成电路制造(上海)有限公司 | Bonding method of wafers with cavities |
| CN105016632A (en) * | 2015-06-12 | 2015-11-04 | 哈尔滨工业大学深圳研究生院 | Method of cryogenic surface activation direct bonding for preparation of quartz glass capillary tube |
| CN105161437A (en) * | 2015-09-18 | 2015-12-16 | 北京工业大学 | Plasma-assisted glass or quartz chip microstructure alignment and pre-bonding method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109081595A (en) * | 2018-09-30 | 2018-12-25 | 江苏耀兴安全玻璃有限公司 | A kind of preparation method of devitrified glass |
| CN110473778A (en) * | 2019-08-17 | 2019-11-19 | 哈尔滨工业大学 | A method of utilizing plasma-activated Direct Bonding zirconium oxide and aluminum oxide |
| CN110473778B (en) * | 2019-08-17 | 2021-10-15 | 哈尔滨工业大学 | Method for directly bonding zirconium oxide and aluminum oxide by using plasma activation |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108439814B (en) | 2021-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103467126B (en) | Preparation method of SiC nanowire modified C/C composite material | |
| CN108439814A (en) | A kind of plasma-activated Direct Bonding method using vapor pretreating surface | |
| Lei et al. | Experimental study of glass to metal seals for parabolic trough receivers | |
| CN101798184B (en) | Sealing connection method of metal and glass of novel medium-high temperature solar energy heat collection pipe | |
| CN101786805B (en) | Sealing method of borosilicate glass and kovar alloy of solar collector tube | |
| CN106102189B (en) | Unit heater and annealing device | |
| CN104577699A (en) | Diffusion bonding method of recombination laser media | |
| CN106673685A (en) | Method for brazing AlON ceramics and boron nitride/silicon nitride composite ceramics by adopting Ag-Cu-Ti brazing filler metal | |
| CN113735608A (en) | Bonding method of laser ceramic and crystal | |
| CN101285912A (en) | Optical waveguide apparatus and method for manufacturing the same | |
| CN106543979B (en) | Graphite/carbon nanotube fibers beam/graphene thermally conductive laminated film preparation method | |
| CN101286444B (en) | Method for manufacturing an soi substrate | |
| CN108975675A (en) | square core fibre and preparation method thereof | |
| CN106083120A (en) | One prepares gradient-structure C/C MoSi2the method of SiC ceramic matrix composite material | |
| CN112897899B (en) | Glass assembly bonding method | |
| CN109166793A (en) | A method of using first vacuum-ultraviolet light, two step of nitrogen plasma activates Direct Bonding lithium niobate and silicon wafer again | |
| CN102676756B (en) | Tubular annealing furnace for magnetic heat treatment | |
| JPH10324585A (en) | Transparent porous body for heat-insulating and its production | |
| WO2005036210A3 (en) | Optical hot tip | |
| CN105198500B (en) | A kind of laminar C/C MoSi2The preparation method of composite | |
| CN103730541B (en) | Solar cell nanometer emitter stage and preparation method thereof | |
| JP2005522400A (en) | Direct bonding method using lithium | |
| CN112919815A (en) | Glass assembly bonding method | |
| CN107541714A (en) | A kind of method for fast growing of big size graphene glass | |
| CN103274715A (en) | Low-temperature active diffusion connecting method of interstitial carbide or nitride ceramic based on high temperature application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |