CN105188204B - D/A converting circuit and method for AMOLED column drive circuits - Google Patents
D/A converting circuit and method for AMOLED column drive circuits Download PDFInfo
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Abstract
The present invention provides a kind of D/A converting circuit for AMOLED column drive circuits, including：Resistance string D/A converter module, the 1st of the resistance string D/A converter module reception data signal is converted to corresponding analog signal to (n m) position, and by the 1st of the data signal to (n m) position；(n m+1) position of the data signal is converted to corresponding analog signal to n-th by capacitance partial pressure D/A converter module, and output after being added with the analog signal that the resistance string D/A converter module is exported.The D/A converting circuit and method for AMOLED column drive circuits of the present invention passes through circuit optimization, so that first order D/A converter module only remains one group of univoltage selecting switch array, so as to greatly reduce DAC area so that the area of whole AMOLED row driving chips, which there has also been, significantly to be reduced.
Description
Technical field
The present invention relates to flat panel display technology field, a kind of more particularly to digital-to-analogue for AMOLED column drive circuits turns
Change circuit and method.
Background technology
AMOLED is shown compared with other Display Techniques, with ultra-thin, wide viewing angle, low-power consumption, fast response time, color
Natural the advantages of, be the most contenders of main flow Display Technique of future generation.In AMOLED display system, column drive circuit is by number
Word picture signal is converted into corresponding analog signal and is supplied directly to OLED pixel array, and column drive circuit includes shift LD
Device, sample register, data latches, level shifting circuit, D/A converting circuit (Digital-to-Analog
Converter, DAC) and output buffer circuit etc..There are hundreds of or even thousands of DAC in each column drive circuit, therefore
DAC area has a great impact to the area of whole column drive circuit.
As shown in figure 1, being traditionally used for AMOLED (Active-matrix organic light-emitting
Diode, active matrix organic light-emitting diode) column drive circuit DAC (Digital to analog converter, digital-to-analogue
Converter) it is resistance string DAC 1 (Resistor-string DAC, abbreviation RDAC), including global resistance string 11 and n are singly
Voltage-selected switch array 12.The global resistance string 11 includes 2nThe resistance identical resistance of individual series connection, n is integer, and is
The precision of the resistance string DAC 1.The global resistance string 11 includes (2n+ 1) individual series connection node, be defined as successively NR_0~
NR_2n, node NR_0 meets reference voltage VREFL, node NR_2nConnect reference voltage VREFH.The n univoltage selecting switch battle array
The 2 of row 12nIndividual input NS_0~NS_2n- 1 is connected respectively the series connection node of each resistance in the global resistance string 11
NR_0~NR_2n-1.Input signal b0~bn-1By controlling n voltage-selected switch arrays 12 to be selected from global resistance string 11
Corresponding reference voltage, realizes data signal to the conversion of analog signal, meanwhile, by the resistance value for controlling global resistance string 11
Gamma calibration functions can be realized.RDAC simple in construction and monotonicity is good, but with the raising of resolution ratio, the choosing of its voltage
The number of switches for selecting switch arrays is in exponential increase, and chip area is consequently increased, therefore resistance string DAC is not suitable for high-resolution
The AMOLED display drivings of rate.
In order to solve the above problems, the DAC of some two-layer configurations is suggested, and DAC points are two-stage by this structure, generally
The first order selects two adjacent voltages by voltage selector using global resistance string structure from global resistance string,
Then two neighboring voltages that the first order is obtained are entered by resistance string partial pressure, capacitance partial pressure or linear interpolation circuit in the second level
The accurate partial pressure of row, obtains final analog voltage.It is illustrated in figure 2 a kind of (Resistor of RFR DAC 2 of the prior art
Floating resistor string DAC, resistance string-floating resistance string DAC), the RFR DAC 2 use two-stage resistance
String structure, first order resistance string partial pressure DAC 21 realizes neighboring voltage by global resistance string and neighboring voltage selector 211
Selection, second level resistance string partial pressure DAC 22 realizes accurate partial pressure by floating resistance string, in order to reduce second level resistance string pair
The load effect of first order resistance string, in the second level, the upper and lower ends of resistance string insert two an equal amount of current sources so that
All nodes of second level resistance string all show high-impedance behavior, improve DAC precision.It is illustrated in figure 3 prior art
In another two-layer configuration DAC, the same first order use resistance string partial pressure DAC 31, pass through global resistance string and adjacent electricity
The selection neighboring voltage of selector 211 is pressed, the difference is that accurate partial pressure is realized in the second level using capacitance partial pressure DAC 32 method.
Compared with the DAC of single step arrangement, the DAC of both two-layer configurations reduces DAC area to a certain extent,
And then reduce the area of AMOLED row driving chips.But, by the comparative analysis to classical two-layer configuration DAC, we
It was found that, the first order of the two-stage DAC structure proposed at present includes a global resistance string and a neighboring voltage selector, such as
Shown in Fig. 4, the selection of neighboring voltage is realized by two univoltage selection circuits 211a and 211b, and its effect is respectively from the overall situation
Two adjacent magnitude of voltage V are selected in resistance stringLAnd VH, it is square that second level circuit can pass through resistance string partial pressure or capacitance partial pressure etc.
Formula realizes accurate partial pressure.For the first order be (n-m) position DAC, the first order by two groups of (n-m) positions univoltage selection circuit group
Into its number of switches phase is identical with the number of switches of the univoltage selection circuit of one group of (n-m+1) position, in other words, in tradition
Two-layer configuration DAC in, the number of switches of the first order is equivalent to two of number of switches in same precision traditional single stage resistance string DAC
Times.
In summary, because traditional two-layer configuration DAC first order is neighboring voltage selection circuit, its first order area is suitable
In twice of same precision univoltage selection circuit, area is still larger, it is necessary to realize whole DAC by further optimizing
The reduction of area.
The content of the invention
The shortcoming of prior art, is used for AMOLED row driving electricity it is an object of the invention to provide one kind in view of the above
The D/A converting circuit and method on road, for solving in the prior art, digital analog converter chip occupying area is big, be not suitable for height
The problem of resolution ratio AMOLED.
In order to achieve the above objects and other related objects, the present invention provides a kind of digital-to-analogue for AMOLED column drive circuits
Change-over circuit, the D/A converting circuit at least includes：
Two-stage D/A conversion unit, wherein, first order D/A converter module is resistance string D/A converter module, the resistance
D/A converter module of going here and there receives the 1st of data signal to (n-m) position, and by the 1st of the data signal to (n-m)
Position is converted to corresponding analog signal；
Second level D/A converter module is capacitance partial pressure D/A converter module, and the capacitance partial pressure D/A converter module is by institute
State (n-m+1) position of data signal and be converted to corresponding analog signal to n-th, and with the resistance string D/A converter module
The analog signal of output is exported after being added.
Preferably, the resistance string D/A converter module includes global resistance string and univoltage selecting switch array；It is described
Global resistance string includes 2nThe resistance identical resistance of individual series connection, the global resistance string includes (2n+ 1) individual series connection node, by electricity
Position is defined as NR_0~NR_2 successively from low to highn, the series connection node NR_0 ground connection of the global resistance string, series connection node NR_2n
Reference voltage is connected, wherein, the reference voltage is integer more than 0, n, and is used for the number of AMOLED column drive circuits to be described
The precision of analog conversion circuit；The univoltage selecting switch array is n univoltage selecting switch arrays, and it 2nIndividual input
NS_0~NS_2n- 1 is connected respectively series connection node NR_0~NR_2 of each resistance in the global resistance stringn- 1, and lead to
Cross the closing of each switching tube of the Digital Signals and open to select corresponding analog signal.
It is highly preferred that the univoltage selecting switch array is tree-like switch arrays, fully decoded switch arrays, two-dimension addressing
Switch arrays or three-dimensional search switch array.
Preferably, the capacitance partial pressure D/A converter module includes m partial pressure unit and a bit capacitor；Each partial pressure list
Member is connected to first node and Section Point, and the first pole plate ground connection of the bit capacitor, the second pole plate connects Section three
Point；The first node is connected to the ginseng by the first switching switch ground connection, the Section Point by the second switching switch
Voltage is examined, the 3rd node is connected to the output end of the resistance string D/A converter module by the 3rd switching switch, described
Pass through the 4th switching switch connection, the 3rd node and the first node or institute between first node and the Section Point
State Section Point and pass through the 5th switching switch connection；Wherein, it is described 4th switching switch and it is described 5th switching switch by when
Clock signal is controlled, and the first switching switch, the second switching switch and the 3rd switching switch are believed by the clock
Number inverted signal control.
It is highly preferred that the partial pressure unit includes derided capacitors, the first pole plate of the derided capacitors is grounded, the partial pressure
Second pole plate of electric capacity is connected to the first node by first choice switch, is connected to described the by the second selecting switch
Two nodes, the control signal of first choice switch isThe control signal of second selecting switch is bi, corresponding point
The value of voltage capacitance is the 2 of the bit capacitori+m-nTimes；biFor (i+1) position in the data signal,For biAnti- letter
Number, i ∈ { n-m, n-m+1, m-n+2 ... n-2, n-1 }, wherein, n is the digital-to-analogue conversion electricity for AMOLED column drive circuits
The precision on road, m is [1：N-1] interval in integer.
In order to achieve the above objects and other related objects, the present invention provides the above-mentioned digital-to-analogue for AMOLED column drive circuits
Conversion method, described digital-analog convertion method at least includes：
Charging stage：The resistance string D/A converter module is converted to the 1st of the data signal to (n-m) position
Analog signal, and corresponded to electric charge and be stored in the capacitance partial pressure D/A converter module；The capacitance partial pressure digital-to-analogue conversion
Module charges to obtain corresponding electric charge according to (n-m+1) position of the data signal to n-th to electric capacity；
The evaluation stage：The capacitance partial pressure D/A converter module is by the 1st of the data signal to (n-m) position and institute
Exported after (n-m+1) position to the n-th corresponding electric charge addition for stating data signal.
Preferably, charging stage, clock signal is low level；Evaluation stage, clock signal is high level.
Preferably, the total amount of electric charge of charging stage is：
Qpre_charge=C (VLSB+bn-mVREFH+2bn-m+1VREFH+.....+2m-1bn-1VREFH)
Wherein, VLSBThe analog signal exported for the first order D/A converter module, VREFHFor the reference voltage, bn-m
~bn-1For the data signal (n-m+1) position to n-th.
Preferably, evaluation stage output voltage expression formula is：
Wherein, VREFHFor the reference voltage, b0~bn-1For the 1st to n-th of the data signal.
As described above, the D/A converting circuit and method for AMOLED column drive circuits of the present invention, has with following
Beneficial effect：
The D/A converting circuit and method for AMOLED column drive circuits of the present invention is keeping second level digital-to-analogue conversion
On the basis of modular structure is simple, pass through circuit optimization so that first order D/A converter module only remains one group of univoltage choosing
Switch arrays are selected, the number of switches of first order D/A converter module is the half of traditional two-layer configuration DAC first order number of switches,
So as to greatly reduce DAC area so that the area of whole AMOLED row driving chips, which there has also been, significantly to be reduced.
Brief description of the drawings
Fig. 1 is shown as single step arrangement resistance string DAC of the prior art structural representation.
Fig. 2 is shown as a kind of two-layer configuration DAC of the prior art structural representation.
Fig. 3 is shown as another two-layer configuration DAC of the prior art structural representation.
Fig. 4 is shown as two-layer configuration DAC of the prior art first order electrical block diagram.
Fig. 5 is shown as the structural representation of the D/A converting circuit for AMOLED column drive circuits of the present invention.
Fig. 6 is shown as the structural representation of the resistance string D/A converter module of the present invention.
Fig. 7 is shown as the structural representation of the capacitance partial pressure D/A converter module of the present invention.
Fig. 8 is shown as the timing diagram of the D/A converting circuit for AMOLED column drive circuits of the present invention.
Fig. 9 is shown as the structural representation that capacitance partial pressure D/A converter module of the invention is operated in the charging stage.
Figure 10 is shown as the structural representation that capacitance partial pressure D/A converter module of the invention is operated in the evaluation stage.
Component label instructions
1 resistance string DAC
11 global resistance strings
12 n univoltage selecting switch array
2 two-layer configuration DAC
21 first order resistance string partial pressure DAC
211 neighboring voltage selectors
211a~211b univoltage selection circuits
22 second level resistance string partial pressure DAC
3 two-layer configuration DAC
31 resistance string partial pressure DAC
311 neighboring voltage selectors
32 capacitance partial pressure DAC
4 are used for the D/A converting circuit of AMOLED column drive circuits
41 resistance string D/A converter modules
411 global resistance strings
412 univoltage selecting switch arrays
42 capacitance partial pressure D/A converter modules
421 partial pressure units
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to Fig. 5~Figure 10.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, then in schema only display with relevant component in the present invention rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
As shown in Fig. 5~Fig. 7, the present invention provides a kind of D/A converting circuit 4 for AMOLED column drive circuits, described
Digital analog converter 4 at least includes：
Two-stage D/A conversion unit, the data signal of reception one n, b0~bn-1For the 1st~the of the data signal
N, wherein, first order D/A converter module is resistance string D/A converter module 41, and the resistance string D/A converter module 41 connects
Receive data signal the 1st is converted to corresponding mould to (n-m) position, and by the 1st of the data signal to (n-m) position
Intend signal；
Second level D/A converter module is capacitance partial pressure D/A converter module 42, the capacitance partial pressure D/A converter module 42
(n-m+1) position of the data signal is converted into corresponding analog signal to n-th, and with the resistance string digital-to-analogue conversion
The analog signal of module output is exported after being added.
The D/A converting circuit 3 for AMOLED column drive circuits includes two-stage, is respectively by the data signal
Low (n-m) position (i.e. the 1st to (n-m) position b0~bn-m-1) control first order D/A converter module；And by the numeral
(i.e. (n-m+1) position is to n-th b by high m of signaln-m~bn1) control second level D/A converter module, it is described to be used for
The output of the D/A converting circuit 4 of AMOLED column drive circuits is obtained by the output summation of two-stage D/A converter module.Wherein,
N is the precision of the D/A converting circuit 4 for AMOLED column drive circuits, and (n-m) is the first order digital-to-analogue conversion mould
The precision of block, m is the precision of the second level D/A converter module.Specific n size depends on application scenario, conventional DAC
Precision has 8,10.M value is relevant with the speed of the D/A converting circuit 4 for AMOLED column drive circuits, and m is
[1：N-1] arbitrary integer in interval, m values are bigger, the speed of the D/A converting circuit 4 for AMOLED column drive circuits
It is slower；M values are smaller, and the speed of the D/A converting circuit 4 for AMOLED column drive circuits is faster, can be according to actual needs
M values are set.
Specifically, as shown in fig. 6, the resistance string D/A converter module 41 includes global resistance string 411 and univoltage
Selecting switch array 412.The global resistance string 411 includes 2nThe resistance identical resistance of individual series connection, n is integer.It is described complete
Office's resistance string 411 includes (2n+ 1) individual series connection node, NR_0~NR_2 is defined as by current potential successively from low to highn, series connection node
NR_0 ground connection, series connection node NR_2nConnect reference voltage VREFH, wherein, the reference voltage VREFHFor the voltage more than 0V, institute
State reference voltage VREFHConcrete numerical value set according to actual needs, be not specifically limited herein.The univoltage selection is opened
It is n univoltage selecting switch arrays to close array 412, and it 2nIndividual input NS_0~NS_2n- 1 is connected respectively in described complete
Series connection node NR_0~NR_2 of each resistance in office's resistance string 411n-1.The univoltage selecting switch array 412 can be tree
Shape switch arrays, fully decoded switch arrays, two-dimension addressing switch arrays or three-dimensional search switch array, in the present embodiment, institute
State structure of the univoltage selecting switch array 412 using tree-like switch arrays.As shown in fig. 6, the univoltage selecting switch battle array
Row 412 include (n-m) and arrange switch, complete the function of multiselect one, and the univoltage selecting switch array 412 receives the data signal
The 1st to (n-m) position b0~bn-m-1, wherein, b0For the 1st (lowest order) of the data signal, control is connected to institute
A row switching tube of global resistance string 411 is stated, the like, bn-m-1It is defeated that control is connected to the resistance string D/A converter module 41
Go out a row switching tube at end, pass through the 1st of the data signal to (n-m) position b0~bn-m-1And its inverted signal
The closing of each switching tube and opening in the univoltage selecting switch array 412 are controlled, the voltage on corresponding resistor is obtained, with this
The 1st corresponding to the data signal is obtained to (n-m) position b0~bn-m-1Analog signal VLSB。
Specifically, as shown in fig. 7, the capacitance partial pressure D/A converter module 42 is low including m partial pressure unit 421 and one
Position electric capacity.The partial pressure unit 421 includes derided capacitors, and the first pole plate of the derided capacitors is grounded, the derided capacitors
Second pole plate connects first choice switch and the second selecting switch respectively, and the control signal of the first choice switch isInstitute
The control signal for stating the second selecting switch is bi, the value of corresponding derided capacitors is the 2 of the bit capacitori+m-nTimes；Wherein, bi
For (i+1) position in the data signal,For biInverted signal, i ∈ { n-m, n-m+1, m-n+2 ... n-2, n-1 }.Each point
First choice switch in pressure unit 421 is connected to first node A, and second selecting switch is connected to Section Point B.
The first pole plate ground connection of the bit capacitor, the second pole plate connects the 3rd node C, and the 3rd node C is the capacitance partial pressure
The output end of D/A converter module 42.The first node A switchs k1 ground connection by the first switching, and the Section Point B passes through
Second switching switch k2 is connected to the reference voltage VREFH, the 3rd node C by the 3rd switching switch k3 be connected to institute
State the analog signal V of the output of resistance string D/A converter module 41LSB.Pass through between the first node A and the Section Point B
4th switching switch k4 connections, the 3rd node C and first node A or described Section Points B is opened by the 5th switching
K5 connections are closed, in the present embodiment, the 3rd node C switchs k5 by the described 5th switching and is connected to the Section Point B.
Wherein, the 4th switching switch k4 and the 5th switching switch k5 subject clock signals Φ controls, first switching are opened
Close the inverted signal of k1, the second switching switch k2 and the 3rd switching switch k3 by the clock signalControl.
In the present embodiment, first pole plate is bottom crown, and second pole plate is top crown.
As shown in Fig. 8~Figure 10, the operation principle of the above-mentioned D/A converting circuit for AMOLED column drive circuits is as follows：
Charging stage：The resistance string D/A converter module 41 changes the 1st of the data signal to (n-m) position
For analog signal VLSB；As shown in figure 9, the clock signal Φ is low level, the first switching switch k1, described second cut
Change switch k2 and the 3rd switching switch k3 is closed, the 4th switching switch k4 and the 5th switching switch k5 are beaten
Open, the analog signal V that the resistance string D/A converter module 41 is exportedLSBIt is stored on the bit capacitor, the numeral letter
Number (n-m+1) position to n-th bn-m~bn-1Control the opening and closing of selecting switch being connected with each derided capacitors, ground
The GND and reference voltage VREFHEach derided capacitors are charged.
Now, the total amount of electric charge on m+1 electric capacity is：
Qpre_charge=C (VLSB+bn-mVREFH+2bn-m+1VREFH+.....+2m-1bn-1VREFH) (1),
Wherein, the analog signal V that the resistance string D/A converter module 41 is exportedLSBSize be：
Above formula (2) is substituted into above formula (1), then the total amount of electric charge of charging stage is：
The evaluation stage：As shown in Figure 10, the clock signal Φ is high level, the first switching switch k1, described the
Two switching switch k2 and the 3rd switching switch k3 are opened, the 4th switching switch k4 and the 5th switching switch
K5 is closed, and the electric charge being stored on the bit capacitor and each derided capacitors is output, and the electric charge being stored on all electric capacity is total
Amount can be expressed as：
Vevaluation=CVout(1+1+2+22+...+2m-1)=2mCVout (4)
It is equal with above formula (4) according to principle of charge conservation, i.e. above formula (3), obtain output voltage VoutExpression formula be：
Output after above formula (5), the D/A converting circuit evaluation for AMOLED column drive circuits of the invention
Voltage expression is identical with n DAC mathematic(al) representation, that is, realizes digital-to-analogue conversion.
As described above, the D/A converting circuit and method for AMOLED column drive circuits of the present invention, has with following
Beneficial effect：
The D/A converting circuit and method for AMOLED column drive circuits of the present invention is keeping second level digital-to-analogue conversion
On the basis of modular structure is simple, pass through circuit optimization so that first order D/A converter module only remains one group of univoltage choosing
Switch arrays are selected, the number of switches of first order D/A converter module is the half of traditional two-layer configuration DAC first order number of switches,
So as to greatly reduce DAC area so that the area of whole AMOLED row driving chips, which there has also been, significantly to be reduced.
In summary, the present invention provides a kind of D/A converting circuit for AMOLED column drive circuits, including：Two series
Mould converting unit, wherein, first order D/A converter module is resistance string D/A converter module, the resistance string D/A converter module
The 1st of data signal is received to (n-m) position, and the 1st of the data signal is converted to (n-m) position corresponding
Analog signal；Second level D/A converter module is capacitance partial pressure D/A converter module, and the capacitance partial pressure D/A converter module will
(n-m+1) position of the data signal is converted to corresponding analog signal to n-th, and with the resistance string digital-to-analogue conversion mould
The analog signal of block output is exported after being added.Charging stage：First order D/A converter module is by the 1st of data signal to
(n-m) position is converted to analog signal, and is corresponded to electric charge and be stored in the D/A converter module of the second level；The second level digital-to-analogue
Modular converter charges to obtain corresponding electric charge according to (n-m+1) position of the data signal to n-th to electric capacity；Evaluation rank
Section：The second level D/A converter module is by the 1st of the data signal to (n-m) position and (n-m+1) position to n-th
Corresponding electric charge is exported after being added.The D/A converting circuit and method for AMOLED column drive circuits of the present invention passes through circuit
Optimization so that first order D/A converter module only remains one group of univoltage selecting switch array, so as to greatly reduce DAC
Area so that the area of whole AMOLED row driving chips, which there has also been, significantly to be reduced.So, the present invention effectively overcomes
Various shortcoming of the prior art and have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (8)
1. a kind of D/A converting circuit for AMOLED column drive circuits, it is characterised in that the D/A converting circuit is at least
Including：
Two-stage D/A conversion unit, wherein, first order D/A converter module is resistance string D/A converter module, the resistance string number
Mould modular converter receives the 1st of data signal to (n-m) position, and the 1st of the data signal to (n-m) position is turned
It is changed to corresponding analog signal；Wherein, the resistance string D/A converter module includes global resistance string and univoltage selecting switch
Array；The global resistance string includes 2nThe resistance identical resistance of individual series connection, the global resistance string includes (2n+ 1) individual series connection
Node, NR_0~NR_2 is defined as by current potential successively from low to highn, the series connection node NR_0 ground connection of the global resistance string, string
Interlink point NR_2nReference voltage is connected, wherein, the reference voltage is integer more than 0, n, and is driven for the AMOLED row that are used for
The precision of the D/A converting circuit of dynamic circuit；The univoltage selecting switch array is n univoltage selecting switch arrays, and it 2n
Individual input NS_0~NS_2n- 1 is connected respectively series connection node NR_0~NR_ of each resistance in the global resistance string
2n- 1, and closing by each switching tube of the Digital Signals and open to select corresponding analog signal；
Second level D/A converter module is capacitance partial pressure D/A converter module, and the capacitance partial pressure D/A converter module is by the number
(n-m+1) position of word signal is converted to corresponding analog signal to n-th, and is exported with the resistance string D/A converter module
Analog signal be added after export.
2. the D/A converting circuit according to claim 1 for AMOLED column drive circuits, it is characterised in that：The list
Voltage-selected switch array is tree-like switch arrays, fully decoded switch arrays, two-dimension addressing switch arrays or three-dimensional search switch
Array.
3. the D/A converting circuit according to claim 1 for AMOLED column drive circuits, it is characterised in that：The electricity
Holding partial pressure D/A converter module includes m partial pressure unit and a bit capacitor；Each partial pressure unit is connected to first node
And Section Point, the first pole plate ground connection of the bit capacitor, the second pole plate the 3rd node of connection；The first node passes through
One switching switch ground connection, the Section Point is connected to the reference voltage by the second switching switch, and the 3rd node leads to
Cross the output end that the 3rd switching switch is connected to the resistance string D/A converter module, the first node and the Section Point
Between the 5th switching is passed through by the 4th switching switch connection, the 3rd node and the first node or the Section Point
Switch connection；Wherein, the 4th switching switch and the 5th switching switch subject clock signal control, first switching
Switch, the second switching switch and the 3rd switching switch are controlled by the inverted signal of the clock signal.
4. the D/A converting circuit according to claim 3 for AMOLED column drive circuits, it is characterised in that：Described point
Unit is pressed to include derided capacitors, the first pole plate of the derided capacitors is grounded, and the second pole plate of the derided capacitors passes through first
Selecting switch is connected to the first node, the Section Point is connected to by the second selecting switch, and the first choice is opened
The control signal of pass isThe control signal of second selecting switch is bi, the value of corresponding derided capacitors is the low level
The 2 of electric capacityi+m-nTimes；biFor (i+1) position in the data signal,For biInverted signal, i ∈ { n-m, n-m+1, n-m+
2 ... n-2, n-1 }, wherein, n is the precision of the D/A converting circuit for AMOLED column drive circuits, and m is [1：N-1] area
Interior integer.
5. a kind of digital-analog convertion method for AMOLED column drive circuits as described in Claims 1 to 4 any one, it is special
Levy and be, the digital-analog convertion method includes：
Charging stage：The resistance string D/A converter module is converted to simulation by the 1st of the data signal to (n-m) position
Signal, and corresponded to electric charge and be stored in the capacitance partial pressure D/A converter module；The capacitance partial pressure D/A converter module
Electric capacity is charged to n-th according to (n-m+1) position of the data signal with obtaining corresponding electric charge；
The evaluation stage：The capacitance partial pressure D/A converter module is by the 1st of the data signal to (n-m) position and the number
(n-m+1) position of word signal is exported after being added to n-th corresponding electric charge.
6. the digital-analog convertion method according to claim 5 for AMOLED column drive circuits, it is characterised in that：Charging rank
Section, clock signal is low level；Evaluation stage, clock signal is high level.
7. the digital-analog convertion method according to claim 5 for AMOLED column drive circuits, it is characterised in that：Charging rank
Section total amount of electric charge be：
Qpre_charge=C (VLSB+bn-mVREFH+2bn-m+1VREFH+...+2m-1bn-1VREFH)
Wherein, VLSBThe analog signal exported for the first order D/A converter module, VREFHFor the reference voltage, bn-m~bn-1
For the data signal (n-m+1) position to n-th.
8. the digital-analog convertion method according to claim 5 for AMOLED column drive circuits, it is characterised in that：Evaluation rank
Section output voltage expresses formula：
<mrow>
<msub>
<mi>V</mi>
<mrow>
<mi>o</mi>
<mi>u</mi>
<mi>t</mi>
</mrow>
</msub>
<mo>=</mo>
<mfrac>
<msub>
<mi>V</mi>
<mrow>
<mi>R</mi>
<mi>E</mi>
<mi>F</mi>
<mi>H</mi>
</mrow>
</msub>
<msup>
<mn>2</mn>
<mi>n</mi>
</msup>
</mfrac>
<mrow>
<mo>(</mo>
<msub>
<mi>b</mi>
<mn>0</mn>
</msub>
<mo>+</mo>
<mn>2</mn>
<msub>
<mi>b</mi>
<mn>1</mn>
</msub>
<mo>+</mo>
<msup>
<mn>2</mn>
<mn>2</mn>
</msup>
<msub>
<mi>b</mi>
<mn>2</mn>
</msub>
<mo>+</mo>
<mo>...</mo>
<mo>+</mo>
<msup>
<mn>2</mn>
<mrow>
<mi>n</mi>
<mo>-</mo>
<mi>m</mi>
<mo>-</mo>
<mn>1</mn>
</mrow>
</msup>
<msub>
<mi>b</mi>
<mrow>
<mi>n</mi>
<mo>-</mo>
<mi>m</mi>
<mo>-</mo>
<mn>1</mn>
</mrow>
</msub>
<mo>+</mo>
<msup>
<mn>2</mn>
<mrow>
<mi>n</mi>
<mo>-</mo>
<mi>m</mi>
</mrow>
</msup>
<msub>
<mi>b</mi>
<mrow>
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<mo>-</mo>
<mi>m</mi>
</mrow>
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<mo>+</mo>
<msup>
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<mrow>
<mi>n</mi>
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<mn>1</mn>
</mrow>
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</mrow>
</msub>
<mo>)</mo>
</mrow>
</mrow>
Wherein, VREFHFor the reference voltage, b0~bn-1For the 1st to n-th of the data signal.
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| CN105609075A (en) * | 2016-01-26 | 2016-05-25 | 京东方科技集团股份有限公司 | Gray-scale voltage generation circuit and control method thereof, driving circuit, and display apparatus |
| CN107196656B (en) * | 2016-03-15 | 2020-11-06 | 联发科技（新加坡）私人有限公司 | Signal calibration circuit and signal calibration method |
| CN106788442B (en) | 2017-01-10 | 2019-09-27 | 京东方科技集团股份有限公司 | D/A converting circuit and method, source electrode driver and display device |
| CN107342042B (en) * | 2017-07-04 | 2019-07-02 | 京东方科技集团股份有限公司 | D/A converting circuit, method and display device |
| CN107809251B (en) * | 2017-11-22 | 2021-02-26 | 京东方科技集团股份有限公司 | Digital-to-analog conversion circuit and method thereof and display device |
| CN108599771B (en) | 2018-05-09 | 2020-04-24 | 京东方科技集团股份有限公司 | Digital-to-analog conversion circuit, method and display device |
| CN108931955B (en) * | 2018-08-28 | 2023-12-26 | 康泰医学系统（秦皇岛）股份有限公司 | Analog output device for physiological signal |
| CN112233618B (en) * | 2020-10-29 | 2022-05-27 | 北京航空航天大学 | Three-level Gray code source driving circuit |
| CN113162623B (en) * | 2021-04-21 | 2023-10-20 | 北京大学 | Conversion circuit and digital-to-analog converter based on resistor voltage division and capacitor integration |
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| JP4639153B2 (en) * | 2006-01-20 | 2011-02-23 | Ｏｋｉセミコンダクタ株式会社 | Digital / analog converter |
| CN101471669A (en) * | 2007-12-28 | 2009-07-01 | 上海华虹Nec电子有限公司 | D/A converter and D/A converting method |
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| CN102324934A (en) * | 2011-07-04 | 2012-01-18 | 电子科技大学 | Resistance-string multiplexing circuit structure of SAR ADC (successive approximation analog to digital converter) |
| US9065480B1 (en) * | 2014-01-29 | 2015-06-23 | Mediatek Inc. | Digital-to-analog converter apparatus having a reconfigurable resistor-capacitor circuit |
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| CN104821828B (en) * | 2015-04-24 | 2018-07-06 | 北京大学深圳研究生院 | Low pressure digital analogue signal conversion circuit, data drive circuit and display system |
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