CN105141261A - Silicon-based low-leakage current cantilever grid field effect transistor differential amplifier - Google Patents
Silicon-based low-leakage current cantilever grid field effect transistor differential amplifier Download PDFInfo
- Publication number
- CN105141261A CN105141261A CN201510379118.4A CN201510379118A CN105141261A CN 105141261 A CN105141261 A CN 105141261A CN 201510379118 A CN201510379118 A CN 201510379118A CN 105141261 A CN105141261 A CN 105141261A
- Authority
- CN
- China
- Prior art keywords
- cantilever beam
- nmos tube
- beam grid
- differential amplifier
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Amplifiers (AREA)
Abstract
The invention relates to a silicon-based low-leakage current cantilever grid field effect transistor differential amplifier which mainly comprises two cantilever grid N-channel metal oxide semiconductor (NMOS) transistors and a constant current source, wherein the sources of the two NMOS transistors are connected and are jointly connected with the below constant current source, the constant current source is grounded, the grids of the two NMOS transistors jointly serve as an input end of an alternating-current signal, the drains of the two NMOS transistors are respectively connected with resistors, the resistors are taken as loads, and the two resistors are jointly connected with power supply voltages. The differential amplifier is fabricated on a P-type silicon substrate; the grids of the two NMOS transistors are suspended on a silicon dioxide layer and made of Al; the part, under a cantilever grid, of a pull-down electrode is covered by the silicon dioxide layer, and the pull-down electrode is grounded through a high-frequency choke coil; the grid of the cantilever grid MOSFET used by the differential amplifier is suspended above the silicon dioxide layer by means of support of an anchor region rather than directly contacted on the silicon dioxide layer; and a pull-down voltage of the cantilever grid of the NMOS transistor is designed to be equal to a threshold voltage of the NMOS transistor.
Description
Technical field
The present invention proposes silica-based low-leakage current cantilever beam gate MOSFET differential amplifier, belong to the technical field of microelectromechanical systems.
Background technology
Along with the deep development of microelectric technique; nowadays the size of transistor is developed to Nano grade; the integrated level of corresponding lsi unit area is still constantly promoting; the function of chip is also increasingly sophisticated; present the state of numerical model analysis, the processing speed of chip is more and more higher simultaneously.The thing followed is exactly the power problems of integrated circuit, and too high power consumption can make chip overheating, the operating characteristic of transistor can be subject to the impact of temperature and change, so overheated chip temperature not only can make chip service life reduction, and can affect the stability of chip.Development due to battery technology has met with unprecedented technical bottleneck, so find a kind of solution of low-power consumption just to seem very important.
Differential amplifier circuit is a kind of important circuit structure in analog circuit, it can suppress common-mode signal while amplifying difference mode signal, thus effectively suppressing the impact of the extraneous factor changes such as temperature on circuit, this good performance of differential amplifier circuit makes it more and more be integrated among various chip.Conventional differential amplifier becomes more and more serious along with the lifting power problems of integrated level, the development of MEMS technology makes to manufacture to be had and the transistor of moving grid can become possibility, have and the transistor of moving grid can effectively can reduce the grid leakage current that grid voltage brings, and then reduce the power consumption of differential amplifier circuit.
Summary of the invention
Technical problem: the object of this invention is to provide a kind of silica-based low-leakage current cantilever beam gate MOSFET differential amplifier, the conventional MOSFET differential pair adopted in conventional differential amplifier is changed to the MOSFET differential pair with cantilever beam grid, effectively can reduces grid leakage current thus the power consumption of reduction circuit.
Technical scheme: one of the present invention silica-based low-leakage current cantilever beam grid field effect transistor differential amplifier is by two NMOS tube i.e. the first cantilever beam grid NMOS tube, second cantilever beam grid NMOS tube and a constant-current source are formed, the source electrode of two NMOS tube links together, jointly be connected with below constant-current source, the other end ground connection of constant-current source, the drain electrode of two NMOS tube connects with resistance respectively, resistance uses as load, two resistance connect with supply voltage jointly, υ in inputs between the grid of two NMOS tube, υ out exports between the drain electrode and load resistance of two NMOS tube, lead-in wire Al makes, the grid of NMOS tube is suspended in the top formation cantilever beam grid of silicon dioxide layer, the Liang Gemao district polysilicon of cantilever beam grid is produced on silicon dioxide layer, N+ active area is source electrode and the drain electrode of NMOS tube, source electrode is connected with lead-in wire by through hole with drain electrode, the part of pull-down electrode under cantilever beam grid is covered by silicon dioxide layer, and whole circuit production is in P-type silicon substrate.
Described cantilever beam grid are not be directly close to above silicon dioxide layer, but rely on anchor district be supported and suspended on above silicon dioxide layer, cantilever beam grid actuation voltage design equal with the threshold voltage of NMOS tube, voltage added on the cantilever beam grid of this NMOS tube is only had to be greater than the threshold voltage of NMOS tube, this cantilever beam grid could be drop-down and contact silicon dioxide layer thus make the conducting of cantilever beam grid NMOS tube transoid, when institute's making alive is less than the threshold voltage of NMOS tube, cantilever beam grid just can not be drop-down, cantilever beam grid NMOS tube just can not conducting, when being in operating conditions under the effect of differential amplifier in AC signal, two NMOS tube alternate conduction, when NMOS tube is in OFF state, its cantilever beam grid are just in suspended state, differential amplifier has less DC leakage current.
The first described cantilever beam grid NMOS tube, the pull-down electrode of the second cantilever beam grid NMOS tube is by high frequency choke coil ground connection, AC signal is prevented to run off with passing through, between cantilever beam grid AC signal υ in being added in two NMOS tube by anchor district, the cantilever beam grid of the first cantilever beam grid NMOS tube in differential pair can be made drop-down when AC signal is in positive half cycle and conducting, second cantilever beam grid NMOS tube is in off state, it is then contrary when AC signal υ in is in negative half period, two NMOS tube in differential amplifier are so just made to break off a friendship for the state of change along with AC signal is in one logical one, when NMOS tube is in OFF state, its cantilever beam grid are just in suspended state, this just effectively reduces the grid leakage current of the MOSFET in this differential amplifier, so after AC signal υ in inputs, this differential amplifier just realizes the amplification of this AC signal and exports υ out.
Beneficial effect: silica-based low-leakage current cantilever beam gate MOSFET differential amplifier of the present invention is owing to having movable cantilever beam grid, when this NMOS tube is in off state, its cantilever beam grid and be just in suspended state, reduce direct grid current leakage current, the power consumption of the differential amplifier in the present invention is obtained and effectively reduces.
Accompanying drawing explanation
Fig. 1 is the vertical view of silica-based low-leakage current cantilever beam gate MOSFET differential amplifier,
Fig. 2 be silica-based low-leakage current cantilever beam gate MOSFET differential amplifier A-A' to profile,
Fig. 3 be silica-based low-leakage current cantilever beam gate MOSFET differential amplifier B-B' to profile,
Fig. 4 is the schematic diagram of silica-based low-leakage current cantilever beam gate MOSFET differential amplifier,
Figure comprises: the first cantilever beam grid NMOS tube 1, second cantilever beam grid NMOS tube 2, constant-current source 3, lead-in wire 4, silicon dioxide layer 5, cantilever beam grid 6, active area, anchor district 7, N+ 8, through hole 9, pull-down electrode 10, P-type silicon substrate 11.
Embodiment
Silica-based low-leakage current cantilever beam gate MOSFET differential amplifier of the present invention is mainly by two cantilever beam grid NMOS tube i.e. the first cantilever beam grid NMOS tube 1, second cantilever beam grid NMOS tube 2 and a constant-current source 3 are formed, the source electrode of two NMOS tube links together, jointly be connected with below constant-current source 3, the other end ground connection of constant-current source, the drain electrode of two NMOS tube connects with resistance respectively, resistance uses as load, two resistance connect with supply voltage jointly, signal inputs between the grid of two NMOS tube, export between the drain electrode and load resistance of two NMOS tube, lead-in wire 4 makes of Al, the grid of NMOS tube is suspended in the top formation cantilever beam grid 6 of silicon dioxide layer 5, the Liang Gemao district 7 of cantilever beam grid 6 is produced on silicon dioxide layer 5 with polysilicon, N+ active area 8 is source electrode and the drain electrode of NMOS tube, source electrode is connected with lead-in wire 4 by through hole 9 with drain electrode, the part of pull-down electrode 10 under cantilever beam grid 6 is covered by silicon dioxide layer 5, and whole circuit production is in P-type silicon substrate 11.
Time in working order, the pull-down electrode 10 of two cantilever beam grid NMOS tube of this differential amplifier is by high frequency choke coil ground connection, on between the cantilever beam grid 6 AC signal υ in being added in two NMOS tube by anchor district 7, this AC signal is enough large, the cantilever beam grid 6 of the NMOS tube 1 in differential pair can be made drop-down when it is in positive half cycle and conducting, NMOS tube 2 is in off state, it is then contrary when AC signal υ in is in negative half period, two NMOS tube in differential amplifier are so just made to break off a friendship for the state of change along with AC signal υ in is in one logical one, when NMOS tube is in OFF state, its cantilever beam grid 6 are just in suspended state, this just effectively reduces the grid leakage current of the MOSFET in this differential amplifier, so after AC signal υ in inputs, this differential amplifier just can realize the amplification of this AC signal and export υ out, formula used is υ out=Av × υ in, wherein Av is the gain coefficient of this differential amplifier.
The preparation method of silica-based cantilever beam grid MOS differential amplifier comprises following step:
1) P type Si substrate 11 is prepared;
2) end oxide growth, grows the uniform oxide layer of one deck, as resilient coating by thermal oxidation at smooth silicon face;
3) deposited silicon nitride, then photoetching and etch nitride silicon layer, remain with the silicon nitride in source region, and the silicon nitride of place is removed;
4) field oxidation, carries out high-temperature thermal oxidation to silicon chip, grown required thick oxide layer 5 in place;
5) remove silicon nitride and basal oxygen sheet, adopt dry etching technology by silicon chip surface silicon nitride and end oxygen all remove;
6) on silicon chip, apply one deck photoresist, photoetching and etching photoresist, remove the photoresist needing to make cantilever beam battery lead plate position.Then deposit one deck Al, removes the Al on photoresist and photoresist, forms pull-down electrode 10;
7) carry out gate oxidation, form high-quality oxide layer;
8) ion implantation, the threshold voltage of adjustment NMOS;
9) utilize CVD technology deposit spathic silicon, photoetching gate figure and polysilicon lead-in wire figure, by dry etching technology etch polysilicon, retain the polysilicon of input lead 4 and position, cantilever beam Shan Mao district 7.
10) form PMGI sacrifice layer by spin coating mode, then photoetching sacrifice layer, only retain the sacrifice layer below cantilever beam grid 6;
11) evaporation growth Al;
12) apply photoresist, retain the photoresist above cantilever beam grid 6;
13) anti-carve Al, form cantilever beam grid 6;
14) apply photoresist, photoetching also etches the hand-hole of phosphorus, injects phosphorus, forms the active area 8 of NMOS tube;
15) through hole 9 and lead-in wire 4 is made;
16) discharge PMGI sacrifice layer, form the cantilever beam grid 6 suspended;
Difference with the prior art of the present invention:
The grid of the cantilever beam gate MOSFET that differential amplifier is in the present invention used is not be directly close to above silicon dioxide layer, but relies on being supported and suspended on above silicon dioxide layer of anchor district.The actuation voltage of the cantilever beam grid of NMOS tube designs equal with the threshold voltage of NMOS tube, when only having voltage added on the cantilever beam grid of NMOS tube to be greater than the threshold voltage of NMOS tube, its cantilever beam grid could be drop-down and contact silicon dioxide layer thus make the conducting of cantilever beam grid NMOS tube transoid, when institute's making alive is less than the threshold voltage of NMOS tube, cantilever beam grid just can not be drop-down, when being in operating conditions under the effect of this differential amplifier in AC signal, two NMOS tube alternate conduction, when NMOS tube is in OFF state, its cantilever beam grid are just in suspended state, Just because of this, with regard to making the differential amplifier in the present invention, there is less DC leakage current.
Namely the structure meeting above condition can be considered silica-based low-leakage current cantilever beam gate MOSFET differential amplifier of the present invention.
Claims (3)
1. a silica-based low-leakage current cantilever beam grid field effect transistor differential amplifier, it is characterized in that this differential amplifier is by two NMOS tube i.e. the first cantilever beam grid NMOS tube (1), second cantilever beam grid NMOS tube (2) and a constant-current source (3) are formed, the source electrode of two NMOS tube links together, jointly be connected with below constant-current source (3), the other end ground connection of constant-current source, the drain electrode of two NMOS tube connects with resistance respectively, resistance uses as load, two resistance connect with supply voltage jointly, υ in inputs between the grid of two NMOS tube, υ out exports between the drain electrode and load resistance of two NMOS tube, lead-in wire (4) makes of Al, the grid of NMOS tube is suspended in top formation cantilever beam grid (6) of silicon dioxide layer (5), the Liang Gemao district (7) of cantilever beam grid (6) is produced on silicon dioxide layer (5) with polysilicon, N+ active area (8) is source electrode and the drain electrode of NMOS tube, source electrode is connected with lead-in wire (4) by through hole (9) with drain electrode, the part of pull-down electrode (10) under cantilever beam grid (6) is covered by silicon dioxide layer (5), and whole circuit production is in P-type silicon substrate (11)
On.
2. silica-based low-leakage current cantilever beam grid field effect transistor differential amplifier according to claim 1, it is characterized in that described cantilever beam grid (6) be not directly be close to silicon dioxide layer (5) top, but rely on anchor district (7) be supported and suspended on silicon dioxide layer (5) top, cantilever beam grid (6) actuation voltage design equal with the threshold voltage of NMOS tube, the upper added voltage of cantilever beam grid (6) when this NMOS tube is only had to be greater than the threshold voltage of NMOS tube, this cantilever beam grid (6) could be drop-down and contact silicon dioxide layer (5) thus make the conducting of cantilever beam grid NMOS tube transoid, when institute's making alive is less than the threshold voltage of NMOS tube, cantilever beam grid (6) just can not be drop-down, cantilever beam grid NMOS tube just can not conducting, when being in operating conditions under the effect of differential amplifier in AC signal, two NMOS tube alternate conduction, when NMOS tube is in OFF state, its cantilever beam grid (6) are just in suspended state, differential amplifier has less DC leakage current.
3. silica-based low-leakage current cantilever beam grid field effect transistor differential amplifier according to claim 1, it is characterized in that the first described cantilever beam grid NMOS tube (1), the pull-down electrode (10) of the second cantilever beam grid NMOS tube (2) is by high frequency choke coil ground connection, AC signal is prevented to run off with passing through, AC signal υ in is added between the cantilever beam grid (6) of two NMOS tube by anchor district (7), the cantilever beam grid (6) of the first cantilever beam grid NMOS tube (1) in differential pair can be made drop-down when AC signal is in positive half cycle and conducting, second cantilever beam grid NMOS tube (2) is in off state, it is then contrary when AC signal υ in is in negative half period, two NMOS tube in differential amplifier are so just made to break off a friendship for the state of change along with AC signal is in one logical one, when NMOS tube is in OFF state, its cantilever beam grid (6) are just in suspended state, this just effectively reduces the grid leakage current of the MOSFET in this differential amplifier, so after AC signal υ in inputs, this differential amplifier just realizes the amplification of this AC signal and exports υ out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510379118.4A CN105141261B (en) | 2015-07-01 | 2015-07-01 | Silicon substrate low-leakage current cantilever beam grid field effect transistor difference amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510379118.4A CN105141261B (en) | 2015-07-01 | 2015-07-01 | Silicon substrate low-leakage current cantilever beam grid field effect transistor difference amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105141261A true CN105141261A (en) | 2015-12-09 |
| CN105141261B CN105141261B (en) | 2017-11-17 |
Family
ID=54726502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510379118.4A Active CN105141261B (en) | 2015-07-01 | 2015-07-01 | Silicon substrate low-leakage current cantilever beam grid field effect transistor difference amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105141261B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6882172B1 (en) * | 2002-04-16 | 2005-04-19 | Transmeta Corporation | System and method for measuring transistor leakage current with a ring oscillator |
| WO2007130913A2 (en) * | 2006-05-01 | 2007-11-15 | The Regents Of The University Of California | Metal-insulator-metal (mim) switching devices |
| US20120188023A1 (en) * | 2011-01-21 | 2012-07-26 | Imec | Optimal Leg Design for MEMS Resonator |
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
| US20120293271A1 (en) * | 2011-05-20 | 2012-11-22 | Nayfeh Osama M | Voltage tunable oscillator using bilayer graphene and a lead zirconate titanate capacitor |
-
2015
- 2015-07-01 CN CN201510379118.4A patent/CN105141261B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6882172B1 (en) * | 2002-04-16 | 2005-04-19 | Transmeta Corporation | System and method for measuring transistor leakage current with a ring oscillator |
| WO2007130913A2 (en) * | 2006-05-01 | 2007-11-15 | The Regents Of The University Of California | Metal-insulator-metal (mim) switching devices |
| US20120188023A1 (en) * | 2011-01-21 | 2012-07-26 | Imec | Optimal Leg Design for MEMS Resonator |
| US20120293271A1 (en) * | 2011-05-20 | 2012-11-22 | Nayfeh Osama M | Voltage tunable oscillator using bilayer graphene and a lead zirconate titanate capacitor |
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105141261B (en) | 2017-11-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105161798B (en) | The SCF and preparation method of silicon substrate low-leakage current cantilever beam grid | |
| CN109545855B (en) | Preparation method of active region of silicon carbide double-groove MOSFET device | |
| CN104967410B (en) | Silicon substrate low-leakage current clamped beam grid field effect transistor difference amplifier | |
| CN105024649B (en) | Silicon substrate low-leakage current cantilever beam gate metal oxide field-effect transistor nor gate | |
| CN105141261A (en) | Silicon-based low-leakage current cantilever grid field effect transistor differential amplifier | |
| CN104935298B (en) | The rest-set flip-flop of silicon substrate low-leakage current cantilever beam gate MOSFET nor gate | |
| CN104992941B (en) | Silicon substrate low-leakage current clamped beam grid cmos transmission gate and preparation method | |
| CN105161489B (en) | Silicon substrate low-leakage current clamped beam gate metal oxide field-effect transistor nor gate | |
| CN104954008B (en) | Silicon substrate low-leakage current double cantilever beam can moving grid metal-oxide-semiconductor nor gate | |
| CN104967437B (en) | Silicon substrate low-leakage current cantilever beam grid cmos transmission gate and preparation method | |
| CN105024661B (en) | Silicon substrate low-leakage current cantilever beam grid metal-oxide-semiconductor class B push-pull power amplifier | |
| CN104967439B (en) | Gallium nitride base low-leakage current clamped beam switching field effect transistor nor gate | |
| CN104935300B (en) | The cantilever beam of silicon substrate low-leakage current four can moving grid metal-oxide-semiconductor rest-set flip-flop | |
| CN105140225B (en) | Silicon substrate low-leakage current clamped beam grid metal-oxide-semiconductor phase inverter and preparation method | |
| CN105140224B (en) | Silicon substrate low-leakage current cantilever beam grid CMOS tube phase inverter and preparation method | |
| CN104935277B (en) | Silicon substrate low-leakage current clamped beam grid metal-oxide-semiconductor class B push-pull power amplifier | |
| CN105007061A (en) | RS trigger for silicon-based low-leakage-current clamped beam grid MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) NOR gate | |
| CN105024648B (en) | Silicon substrate low-leakage current cantilever beam field effect transistor mixer | |
| CN105141259A (en) | Silicon-based low leakage current clamped beam field effect transistor mixer | |
| CN104935290B (en) | The SCF and preparation method of silicon substrate low-leakage current clamped beam grid | |
| CN105099374B (en) | Gallium nitride base low-leakage current cantilever switch difference amplifier | |
| CN104953969A (en) | Gallium nitride-based low current leakage fixed beam switch differential amplifier | |
| CN104835787A (en) | Dual gate oxide device manufacturing method and dual gate oxide device | |
| CN105044454B (en) | Based on silicon substrate low-leakage current double cantilever beam can moving grid frequency detector | |
| CN104935297B (en) | Based on silicon substrate low-leakage current double cantilever beam can moving grid nor gate rest-set flip-flop |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |