CN105140252A - Wafer-level packaging method of image sensor and packaged product thereof - Google Patents
Wafer-level packaging method of image sensor and packaged product thereof Download PDFInfo
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- CN105140252A CN105140252A CN201510410477.1A CN201510410477A CN105140252A CN 105140252 A CN105140252 A CN 105140252A CN 201510410477 A CN201510410477 A CN 201510410477A CN 105140252 A CN105140252 A CN 105140252A
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Abstract
The invention relates to a wafer-level packaging method of an image sensor and a packaged product thereof. The method comprises the steps of: bonding the upper surface of an image sensor chip and the lower surface of a signal processing chip together; carrying out thinning polishing on the lower surface of the image sensor chip, adding a color filter and a micro-lens to the image sensor chip after the thinning polishing, then removing cutting channel parts of the image sensor chip, and exposing cutting channels of the signal processing chip; taking a transparent substrate, bonding the transparent substrate and the signal processing chip together through a supporting wall, wherein the supporting wall is arranged in the cutting channel of the signal processing chip; carrying out thinning polishing on the upper surface of the signal processing chip, and making leads and welded balls on the signal processing chip after the thinning polishing; and carrying out scribing along the cutting channels of the signal processing chip, and directly obtaining surface-mounted single chips. According to the invention, any temporary bonding is not needed for assistance, and the flow is simplified.
Description
Technical field
The present invention does not only disclose a kind of wafer-level packaging method of imageing sensor, the invention also discloses a kind of wafer-level packaging product of imageing sensor, the invention belongs to technical field of semiconductor encapsulation.
Background technology
Along with the development of semiconductor technology, imageing sensor has been widely used in the various field needing to carry out digital imagery, such as, in the electronic product such as digital camera, Digital Video.According to the difference of working method and physical structure, imageing sensor can be divided into two classes usually: charge coupled device (ChargeCoupledDevice, CCD) imageing sensor and complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor.
Increasing in recent years along with image sensor chip pixel value, the physical size of the single pixel of transducer is more and more less, like this integrated circuit fabrication process of Sensor section in chip is also become increasingly complex, to such an extent as to this part is difficult to out manufactured in technique with signal processing module.In addition the photosensitive region due to single pixel is more and more less, and in order to prevent image fault, it there has also been stricter restriction to the amount of incident photon.Encapsulated from chip back in the past, transmission of photons metal interconnection layer enters photosensitive regions of pixels, and complicated metal interconnection layer often blocks a part of photon, and the photon number causing photosensitive region to obtain can not meet the requirement of imaging.
In order to solve said problem above, when design chips, image sensing module is made in a chip, with comparatively high technology level production, the module of processing signals is accomplished in another chip, by the explained hereafter of comparatively saving money, after finishing, realizes the interconnected of two chips by the mode of encapsulation.Use back-illuminated type technique simultaneously, originally the circuit part be between camera lens and light receiving semiconductor to be transferred to around light receiving semiconductor or below, make light directly can enter photosensitive region, prevent interconnect circuit to the stop of light, significantly improve the utilization ratio of single pixel cell to light.
Had detailed introduction to the packaged type of back-illuminated type chip in the industry at present, and also had similar report to the chip package of stack, but it is also more rare to carry out the technical scheme of wafer-level packaging by the back side illumination image sensor chip of TSV technology to stack.
Summary of the invention
An object of the present invention overcomes the deficiencies in the prior art, provide a kind of need not any ephemeral key synthetic circle do carrier, can a kind of wafer-level packaging method of imageing sensor of simplification of flowsheet.
Another object of the present invention is to provide a kind of wafer-level packaging product of imageing sensor.
According to technical scheme provided by the invention, the wafer-level packaging method of described a kind of imageing sensor comprises the following steps:
A, the upper surface of image sensor chip and the lower surface of signal processing chip to be bonded together;
B, attenuated polishing is carried out to the lower surface of image sensor chip, on image sensor chip, add colored filter and lenticule after attenuated polishing, then remove the Cutting Road part of image sensor chip, expose the Cutting Road of signal processing chip;
C, get transparency carrier, transparency carrier and signal processing chip are bonded together by knee wall, and knee wall is positioned in the Cutting Road of signal processing chip;
D, attenuated polishing is carried out to the upper surface of signal processing chip, on signal processing chip, after attenuated polishing, make lead-in wire and soldered ball;
E, carry out scribing along the Cutting Road position of signal processing chip, obtain the one chip that can directly carry out mounting.
It is substrate that described step c is specially with transparency carrier, makes knee wall at the upper surface of transparency carrier, is bonded together after the wall top of knee wall is coated with bonding glue with the signal processing chip in Cutting Road.
Described step c is specially and makes knee wall in the Cutting Road of signal processing chip, is bonded together after the wall primary coat bonding glue of knee wall with got transparency carrier.
Described bonding glue is heat curing-type glue or light curable type glue, loses viscosity by this glue after laser or infrared radiation.
In step a, the upper surface of image sensor chip and the lower surface of signal processing chip are bonded together by the hybrid bonded mode of copper oxygen, directly Si-Si bonding mode, silica bonding pattern or oxygen-oxygen bond mode of closing.
In step b, removed the Cutting Road part of image sensor chip by gold-tinted, etching or direct cutting.
Described transparency carrier is pmma substrate, unorganic glass substrate, ceramic substrate substrate, plastic base, organic film or silicon chip, and transparency carrier thickness is 50um ~ 500um.
Described knee wall is the figure that positive photoresistance or negative photoresistance are produced by light blockage coating, exposure or developing process, the photoresistance line then solidify to form, and knee wall be individual layer or multilayer; Or knee wall is direct adhesion, the material of coating or deposition is the film of polyacrylate or polyisoprene rubber, the lines that this film is formed by gold-tinted and etching technics, and knee wall be individual layer or multilayer.
In steps d, the THICKNESS CONTROL after signal processing chip is thinning is at 20 ~ 150um.
According to technical scheme provided by the invention, a kind of wafer-level packaging product of imageing sensor, it comprises image sensor chip, signal processing chip, colorized optical filtering mirror, lenticule, transparency carrier, knee wall, lead-in wire and soldered ball; Colorized optical filtering mirror and lenticule is provided with in image sensor chip, the lower surface of signal processing chip is connected with the upper surface of image sensor chip, transparency carrier is provided with in the below of image sensor chip, knee wall is connected with at the lower surface of the substrate layer of signal processing chip, the bottom of knee wall is connected with the upper surface of transparency carrier, gap is there is between the lower surface of image sensor chip and the upper surface of transparency carrier, in the substrate layer of signal processing chip, be provided with lead-in wire, be provided with soldered ball at the upper surface of lead-in wire.
The present invention has the following advantages:
The present invention, by signal processing chip and the face-to-face bonding of image sensor chip, utilizes signal processing chip to do the thinning image sensor chip of carrier, and then does the thinning signal processing chip of carrier with cover glass, finally complete TSV and RDL technique after bonding.Or first utilize image sensor chip to do the thinning signal processing chip of carrier after bonding, after completing TSV and RDL, do the reduction process of image sensor chip again, need not do auxiliary by any interim bonding, simplify flow process.
Signal processing chip and image sensor chip make separately and optimize ic manufacturing process, improve yield.Signal processing module is moved out separately from image sensor chip, and what improve image sensor chip utilizes area, is conducive to arranging more pixel cell.
Sensitive chip Cutting Road removes a part, and knee wall directly and logic wafer contacts, avoids the destruction of bearing stress to thinner sensitive chip.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below.Apparently, the accompanying drawing in the following describes is only some embodiments recorded in the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of the packaging body that step a of the present invention obtains.
Fig. 2 is the structural representation of the packaging body that step b of the present invention obtains.
Fig. 3 is the structural representation of the packaging body that step c of the present invention obtains.
Fig. 4 is the structural representation of the packaging body that steps d of the present invention obtains.
Fig. 5 is the structural representation of the packaging body that step e of the present invention obtains.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
Describe the present invention below with reference to embodiment shown in the drawings.But these execution modes do not limit the present invention, the structure that those of ordinary skill in the art makes according to these execution modes, method or conversion functionally are all included in protection scope of the present invention.
In addition, label or the sign of repetition may be used in various embodiments.These repeat only clearly to describe the present invention in order to simple, do not represent between discussed different embodiment and/or structure and have any relevance.
The label had about step mentioned in the embodiments of the present invention, is only used to the convenience described, and does not have the contact of sequencing in fact.Different step in each embodiment, can carry out the combination of different sequencing, realize goal of the invention of the present invention.
Embodiment 1
A kind of wafer-level packaging method of imageing sensor comprises the following steps:
A, the conventional hybrid bonded mode of copper oxygen is adopted to be bonded together the lower surface of the upper surface of image sensor chip 1 and signal processing chip 2, as shown in Figure 1;
B, attenuated polishing is carried out to the lower surface of image sensor chip 1, on image sensor chip 1, colored filter 3 and lenticule 4 is added after attenuated polishing, then removed the Cutting Road part of image sensor chip 1 by gold-tinted, expose the Cutting Road of signal processing chip 2, as shown in Figure 2;
C, get thickness and be 50 μm and material is the transparency carrier 5 of polymethyl methacrylate, with transparency carrier 5 for substrate, the knee wall 6 of polyacrylate material is made at the upper surface of transparency carrier 5, be bonded together with the signal processing chip 2 in Cutting Road after the wall top of knee wall 6 is coated with bonding glue, bonding glue is heat curing-type glue, as shown in Figure 3;
D, carry out attenuated polishing to the upper surface of signal processing chip 2, the THICKNESS CONTROL after signal processing chip is thinning, at 20um, makes lead-in wire 7 and soldered ball 8 after attenuated polishing, as shown in Figure 4 on signal processing chip 2;
E, carry out scribing along the Cutting Road position of signal processing chip 2, obtain the one chip that can directly carry out mounting, as shown in Figure 5.
Embodiment 2
A kind of wafer-level packaging method of imageing sensor comprises the following steps:
A, conventional direct Si-Si bonding mode is adopted to be bonded together the lower surface of the upper surface of image sensor chip 1 and signal processing chip 2, as shown in Figure 1;
B, attenuated polishing is carried out to the lower surface of image sensor chip 1, on image sensor chip 1, colored filter 3 and lenticule 4 is added after attenuated polishing, then removed the Cutting Road part of image sensor chip 1 by etching, expose the Cutting Road of signal processing chip 2, as shown in Figure 2;
C, get thickness and be 200 μm and material is the transparency carrier 5 of unorganic glass, with transparency carrier 5 for substrate, the knee wall 6 of polyisoprene rubber material is made at the upper surface of transparency carrier 5, be bonded together with the signal processing chip 2 in Cutting Road after the wall top of knee wall 6 is coated with bonding glue, bonding glue is light curable type glue, as shown in Figure 3;
D, carry out attenuated polishing to the upper surface of signal processing chip 2, the THICKNESS CONTROL after signal processing chip is thinning, at 70um, makes lead-in wire 7 and soldered ball 8 after attenuated polishing, as shown in Figure 4 on signal processing chip 2;
E, carry out scribing along the Cutting Road position of signal processing chip 2, obtain the one chip that can directly carry out mounting, as shown in Figure 5.
Embodiment 3
A kind of wafer-level packaging method of imageing sensor comprises the following steps:
A, conventional silica bonding pattern is adopted to be bonded together the lower surface of the upper surface of image sensor chip 1 and signal processing chip 2, as shown in Figure 1;
B, attenuated polishing is carried out to the lower surface of image sensor chip 1, on image sensor chip 1, colored filter 3 and lenticule 4 is added after attenuated polishing, then by directly cutting the Cutting Road part removing image sensor chip 1, expose the Cutting Road of signal processing chip 2, as shown in Figure 2;
C, get thickness and be 500 μm and material is the transparency carrier 5 of plastics, the knee wall 6 of polyacrylate material is made in the Cutting Road of signal processing chip 2, be bonded together with got transparency carrier 5 after the wall primary coat bonding glue of knee wall 6, bonding glue is heat curing-type glue, as shown in Figure 3;
D, carry out attenuated polishing to the upper surface of signal processing chip 2, the THICKNESS CONTROL after signal processing chip is thinning, at 100um, makes lead-in wire 7 and soldered ball 8 after attenuated polishing, as shown in Figure 4 on signal processing chip 2;
E, carry out scribing along the Cutting Road position of signal processing chip 2, obtain the one chip that can directly carry out mounting, as shown in Figure 5.
Embodiment 4
A kind of wafer-level packaging method of imageing sensor comprises the following steps:
A, conventional oxygen-oxygen bond mode of closing is adopted to be bonded together the lower surface of the upper surface of image sensor chip 1 and signal processing chip 2, as shown in Figure 1;
B, attenuated polishing is carried out to the lower surface of image sensor chip 1, on image sensor chip 1, colored filter 3 and lenticule 4 is added after attenuated polishing, then by directly cutting the Cutting Road part removing image sensor chip 1, expose the Cutting Road of signal processing chip 2, as shown in Figure 2;
C, get thickness be 500 μm and material be pottery transparency carrier 5, the knee wall 6 of polyisoprene rubber material is made in the Cutting Road of signal processing chip 2, be bonded together with got transparency carrier 5 after the wall primary coat bonding glue of knee wall 6, bonding glue is heat curing-type glue, as shown in Figure 3;
D, carry out attenuated polishing to the upper surface of signal processing chip 2, the THICKNESS CONTROL after signal processing chip is thinning, at 150um, makes lead-in wire 7 and soldered ball 8 after attenuated polishing, as shown in Figure 4 on signal processing chip 2;
E, carry out scribing along the Cutting Road position of signal processing chip 2, obtain the one chip that can directly carry out mounting, as shown in Figure 5.
The one chip (i.e. the wafer-level packaging product of imageing sensor) obtained, it comprises image sensor chip 1, signal processing chip 2, colorized optical filtering mirror 3, lenticule 4, transparency carrier 5, knee wall 6, lead-in wire 7 and soldered ball 8; Colorized optical filtering mirror 3 and lenticule 4 is provided with in image sensor chip 1, the lower surface of signal processing chip 2 is connected with the upper surface of image sensor chip 1, transparency carrier 5 is provided with in the below of image sensor chip 1, knee wall 6 is connected with at the lower surface of the substrate layer of signal processing chip 2, the bottom of knee wall 6 is connected with the upper surface of transparency carrier 5, gap is there is between the lower surface of image sensor chip 1 and the upper surface of transparency carrier 5, in the substrate layer of signal processing chip 2, be provided with lead-in wire 7, be provided with soldered ball 8 at the upper surface of lead-in wire 7.
Described step c is specially with transparency carrier 5 for substrate, makes knee wall 6 at the upper surface of transparency carrier 5, is bonded together after the wall top of knee wall 6 is coated with bonding glue with the signal processing chip 2 in Cutting Road; Described bonding glue is heat curing-type glue or light curable type glue, loses viscosity by this glue after laser or infrared radiation.
Described knee wall 6 is figures that positive photoresistance or negative photoresistance are produced by light blockage coating, exposure or developing process, the photoresistance line then solidify to form, and knee wall be individual layer or multilayer; Or knee wall is direct adhesion, the material of coating or deposition is the film of polyacrylate or polyisoprene rubber, the lines that this film is formed by gold-tinted and etching technics, and knee wall be individual layer or multilayer.
Described step c is specially and makes knee wall 6 in the Cutting Road of signal processing chip 2, is bonded together after the wall primary coat bonding glue of knee wall 6 with got transparency carrier 5; Described bonding glue is heat curing-type glue or light curable type glue, loses viscosity by this glue after laser or infrared radiation.
In step a, the upper surface of image sensor chip 1 and the lower surface of signal processing chip 2 are bonded together by the hybrid bonded mode of copper oxygen, directly Si-Si bonding mode, silica bonding pattern or oxygen-oxygen bond mode of closing.
In step b, removed the Cutting Road part of image sensor chip 1 by gold-tinted, etching or direct cutting.
Described transparency carrier 5 is pmma substrate, unorganic glass substrate, ceramic substrate substrate, plastic base, organic film or silicon chip, and its effect is that the lenticule of protection image sensor chip is not by the pollution of successive process.The photoresistance doing light-resistance wall can be negative photoresistance, also can be positive photoresistance or other materials that can provide a supporting role.The modes such as its execution mode can adopt coating, then the mode of exposure imaging, also directly can adopt silk screen printing, 3D printing.This wall can be that individual layer is single-row, also can be multilayer multiple row.
In steps d, the THICKNESS CONTROL after signal processing chip 2 is thinning at 20 ~ 150um, to meet follow-up TSV technique needs.
In step e, scribing herein can be directly cut chip and transparency carrier open; Also can be cut chip open, cutting mouth rests on knee wall, then goes bonding or infrared heating etc. to remove knee wall top adhesivity by laser, chip can be separated with transparency carrier; Or cut chip and knee wall open, by viscosity of removing photoresist, reach the separation of chip.
Those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, can realize the present invention in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.Any Reference numeral in claim should be considered as the claim involved by limiting.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, and the technical scheme in each embodiment also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
Claims (10)
1. a wafer-level packaging method for imageing sensor, is characterized in that the method comprises the following steps:
A, the lower surface of the upper surface of image sensor chip (1) and signal processing chip (2) to be bonded together;
B, attenuated polishing is carried out to the lower surface of image sensor chip (1), on image sensor chip (1), colored filter (3) and lenticule (4) is added after attenuated polishing, then remove the Cutting Road part of image sensor chip (1), expose the Cutting Road of signal processing chip (2);
C, get transparency carrier (5), transparency carrier (5) and signal processing chip (2) are bonded together by knee wall (6), and knee wall (6) is positioned in the Cutting Road of signal processing chip (2);
D, attenuated polishing is carried out to the upper surface of signal processing chip (2), after attenuated polishing, on signal processing chip (2), make lead-in wire (7) and soldered ball (8);
E, carry out scribing along the Cutting Road position of signal processing chip (2), obtain the one chip that can directly carry out mounting.
2. the wafer-level packaging method of a kind of imageing sensor as claimed in claim 1, it is characterized in that: described step c is specially with transparency carrier (5) as substrate, make knee wall (6) at the upper surface of transparency carrier (5), be bonded together with the signal processing chip (2) in Cutting Road after the wall top of knee wall (6) is coated with bonding glue.
3. the wafer-level packaging method of a kind of imageing sensor as claimed in claim 1, it is characterized in that: described step c is specially and makes knee wall (6) in the Cutting Road of signal processing chip (2), be bonded together with got transparency carrier (5) after the wall primary coat bonding glue of knee wall (6).
4. the wafer-level packaging method of a kind of imageing sensor as claimed in claim 2 or claim 3, is characterized in that: described bonding glue is heat curing-type glue or light curable type glue, loses viscosity by this glue after laser or infrared radiation.
5. the wafer-level packaging method of a kind of imageing sensor as claimed in claim 1, it is characterized in that: in step a, the upper surface of image sensor chip (1) and the lower surface of signal processing chip (2) are bonded together by the hybrid bonded mode of copper oxygen, directly Si-Si bonding mode, silica bonding pattern or oxygen-oxygen bond mode of closing.
6. the wafer-level packaging method of a kind of imageing sensor as claimed in claim 1, is characterized in that: in step b, is removed the Cutting Road part of image sensor chip (1) by gold-tinted, etching or direct cutting.
7. the wafer-level packaging method of a kind of imageing sensor as claimed in claim 1, it is characterized in that: described transparency carrier (5) is pmma substrate, unorganic glass substrate, ceramic substrate substrate, plastic base, organic film or silicon chip, and transparency carrier (5) thickness is 50um ~ 500um.
8. the wafer-level packaging method of a kind of imageing sensor as claimed in claim 1, it is characterized in that: described knee wall (6) is the figure that positive photoresistance or negative photoresistance are produced by light blockage coating, exposure or developing process, then the photoresistance line solidify to form, and knee wall (6) is individual layer or multilayer; Or knee wall (6) is direct adhesion, the material of coating or deposition is the film of polyacrylate or polyisoprene rubber, the lines that this film is formed by gold-tinted and etching technics, and knee wall (6) is individual layer or multilayer.
9. the wafer-level packaging method of a kind of imageing sensor as claimed in claim 1, is characterized in that: in steps d, and the THICKNESS CONTROL after signal processing chip (2) is thinning is at 20 ~ 150um.
10. wafer-level packaging product for imageing sensor, is characterized in that: it comprises image sensor chip (1), signal processing chip (2), colorized optical filtering mirror (3), lenticule (4), transparency carrier (5), knee wall (6), lead-in wire (7) and soldered ball (8), colorized optical filtering mirror (3) and lenticule (4) is provided with in image sensor chip (1), the lower surface of signal processing chip (2) is connected with the upper surface of image sensor chip (1), transparency carrier (5) is provided with in the below of image sensor chip (1), knee wall (6) is connected with at the lower surface of the substrate layer of signal processing chip (2), the bottom of knee wall (6) is connected with the upper surface of transparency carrier (5), gap is there is between the lower surface of image sensor chip (1) and the upper surface of transparency carrier (5), lead-in wire (7) is provided with in the substrate layer of signal processing chip (2), soldered ball (8) is provided with at the upper surface of lead-in wire (7).
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| CN105140252B (en) | 2018-02-23 |
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