CN105097983B - 一种异质结近红外光敏传感器及其制备方法 - Google Patents
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Abstract
本发明属于光电子领域，涉及一种异质结近红外光敏传感器及其制备方法。是由热蒸发气相沉积法制备的碲锌氧复合物与p‑Si形成的异质结光敏传感器，包括p型硅衬底，碲锌氧复合物，顶电极和底电极。其关键在于碲锌氧复合物的制备。这种新型的传感器表现出了波段可调的稳定优良的光敏探测性能，可探测波长从紫外‑可见‑近红外波段调节至限定在1040nm的近红外波段。
Description
技术领域
本发明属于纳米材料制备与应用领域，也属于光电子领域，涉及一种硅/碲锌氧复合物异质结近红外光敏传感器及其制备方法。
背景技术
硅材料是当代半导体产业的基石，在光敏探测领域有着极其重要的应用，传统的Si探测器的光谱响应范围一般是400-1100 nm。最近这些年来，Si 与其它一些半导体材料如石墨烯（Zhu M, Zhang L, Li X, He Y, Li X, Guo F, Zhang X, Wang K, Xie D, LiX, Wei B and Zhu H 2015 J. Mater. Chem. A 7 8133）、氧化锌（Tsai D H, Lin C A,Lien W C, Chang H C, Wang Y L and He J H 2011 ACS Nano 5 7748）、氧化铜（Hong Q,Cao Y, Xu J, Lu H, He J and Sun J L 2014 ACS Appl. Mater. Interfaces 620887）、PEDOT:PSS（Lin T, Liu X, Zhou B, Zhan Z, Cartwright A N and Swihart M T2014 Adv. Funct. Mater. 24 6016）、硫化镉（Manna S, Das S, Mondal S P, Singha Rand Ray S K 2012 J. Phys. Chem. C 116 7126）、锗量子点（Chien C Y, Lai W T,Chang Y J, Wang C C, Kuo M H and Li P W 2014 Nanoscale 6 5303）、ITO（Yun J H,Kim J and Park Y C 2014 J. Appl. Phys. 116 064904）形成的异质结光敏探测器器件得到了深入的研究。在这些半导体材料中，由于宽禁带半导体氧化锌在紫外光敏探测器方面具有很大的潜力，其与硅形成的异质结光敏探测器件深受研究人员的青睐。然而由于氧化锌对紫外光敏感、硅对可见-近红外光敏感，二者形成的异质结光敏探测器也都受限于此，并没有获得过比较纯净的只对近红外光敏感的探测器。
发明内容
本发明所要解决的技术问题是提供一种异质结近红外光敏传感器及其制备方法。
本发明为解决上述问题，提供一种碲锌氧新型复合物材料的制备方法，并制备了一种碲锌氧复合物/p-Si异质结光敏探测器。碲锌氧复合物具有良好的衬底附着力，随着复合物中各组分相对含量的变化，器件表现出了波段可调的稳定优良的光敏探测性能。
本发明的异质结近红外光敏传感器，是由热蒸发气相沉积法制备的碲锌氧复合物与p-Si形成的异质结光敏传感器，包括p型硅衬底，碲锌氧复合物，顶电极和底电极。
所述顶电极是半透明Au电极，底电极是铟镓电极。
所述P型硅衬底电阻率1-10Ω·cm。
上述近红外光敏传感器的制备方法，采用如下具体步骤：
首先在硅衬底上沉积一层对氧化锌具有亲和性的薄膜作为种子层，然后将衬底和蒸发源同时放入可控气氛管式炉，二者距离约7-16cm，控制反应温度为1000℃，升温速度10℃/min，保温10-30min，通入反应气体为Ar和O2，所述蒸发源是由摩尔比为1：1：（0.05-0.07）的ZnO粉末、碳粉、碲粉组成；
反应完成后利用金属掩模，继续用磁控溅射法镀一层半透明的Au顶电极。最后在衬底底部刮涂铟镓电极，完成对器件的封装。
所述种子层为金，其厚度为30-100nm。
反应气体为20 sccm 的Ar气和8 sccm 的O2。
本发明利用气相法的生长机理，首次在蒸发源中加入碲粉末，实现了一种碲锌氧新型复合物的合成。并且制备出了p-Si/碲锌氧复合物异质结光敏探测器，随着复合物中各组分相对含量的变化，这种新型的传感器表现出了波段可调的稳定优良的光敏探测性能，可探测波长从紫外-可见-近红外波段调节至限定在1040nm的近红外波段，进而被调节至可见-近红外波段。获得了一种紫外-可见-近红外光敏探测器，探测波长为380-1050nm，对805nm单色光响应度为4.10 mA/W; 获得了一种近红外光敏探测器，探测波长被限定在1040nm附近，对1040 nm单色光响应度为24.61 mA/W; 获得了一种可见-近红外光敏探测器，探测波长为400-1100 nm，对855 nm单色光响应度为102.41 mA/W。
附图说明
图1是气相法制备TeZnO复合物的可控气氛管式炉的装置示意图，1为蒸发源的位置，2、3、4、5、6为衬底的位置，距离蒸发源以此为7、10、13、16、19cm，7为通入反应气体Ar和O2， 8为管式炉炉管。
图2是p-Si/TeZnO复合物异质结光敏探测器结构示意图；其中：1为p-Si衬底，2为TeZnO复合物，3为Au电极，4为InGa电极。
图3是用光敏测试系统测量实施例1所制备的光敏探测器在0伏偏压下的不同波长的光响应谱，其中，横坐标是波长，纵坐标是响应度。
图4是用光敏测试系统测量实施例2所制备的光敏探测器在0伏偏压下的不同波长的光响应谱，其中，横坐标是波长，纵坐标是响应度。
图5是用光敏测试系统测量实施例3所制备的光敏探测器在0伏偏压下的不同波长的光响应谱，其中，横坐标是波长，纵坐标是响应度。
图6是用光敏测试系统测量实施例4所制备的光敏探测器在0伏偏压下的不同波长的光响应谱，其中，横坐标是波长，纵坐标是响应度。
图7是用光敏测试系统测量实施例5所制备的光敏探测器在0伏偏压下的不同波长的光响应谱，其中，横坐标是波长，纵坐标是响应度。
具体实施方式
本发明的异质结近红外光敏传感器的制备和检测流程如下：
1.在干净的衬底上利用磁控溅射镀膜的方法沉积一层30-100nm厚的Au作为种子层。
2.将蒸发源和衬底同时放入可控气氛管式炉中，蒸发源所处的温度设为1000oC，衬底以此放置在距离蒸发源7、10、13、16或19cm的位置，升温速度10℃/min，保温10-30min，反应气氛为Ar气20 sccm和O2 8 sccm。蒸发源是0.255-0.265g ZnO粉末、0.040-0.060g碳粉、0.020-0.030g碲粉。
3.反应完成后将衬底取出，旋涂聚甲基丙烯酸甲酯(PMMA)溶液填充复合物表面的孔隙。
4.利用金属掩模的方法继续沉积半透明的金属Au顶电极。
5.然后在衬底底部刮涂InGa电极。
6.利用银浆和铜导线将顶电极和底电极引出，并在100℃下烘干。
7.利用光敏测试系统测试器件的光敏特性。
下面结合附图和实施例对本发明进一步阐述，但并不因此将本发明限制在所述的实施例范围之内。
实施例1：
本例中，衬底放于图1中2的位置。具体步骤如下：
1.采用传统的半导体工艺清洗p-Si衬底。
2.在衬底上沉积一层30nm的Au薄膜作为种子层。
3.将衬底和蒸发源放入可控气氛管式炉，衬底距离蒸发源7 cm，蒸发源所处的温度设为1000oC，升温速度10℃/min，保温10min，反应气氛为Ar气20 sccm和O2 8 sccm。蒸发源是0.261g ZnO粉末、0.043g碳粉、0.020g碲粉。
4.反应完成后将衬底取出，旋涂PMMA溶液填充复合物表面的孔隙。
5.利用金属掩模的方法继续沉积半透明的金属Au顶电极。
6.然后在衬底底部刮涂InGa电极。
7.利用银浆和铜导线将顶电极和底电极引出，并在100℃下烘干。
8.利用光敏测试系统测试器件的光敏特性，即可得到器件对光的响应谱结果，参见附图3。
9.由响应谱看出，该传感器的敏感波长范围比较宽，从380nm到接近1000nm，响应度最高点位于665nm附近，最高响应度为0.92mA/W.
实施例2：
在本例中，衬底放于图1中3的位置。具体步骤如下：
1.采用传统的半导体工艺清洗p-Si衬底。
2.在衬底上沉积一层30 nm的Au薄膜作为种子层。
3.将衬底和蒸发源放入可控气氛管式炉，衬底距离蒸发源10 cm，蒸发源所处的温度设为1000oC，升温速度10℃/min，保温30 min，反应气氛为Ar气20 sccm和O2 8 sccm。蒸发源是0.264g ZnO粉末、0.053g碳粉、0.024g碲粉。
4.反应完成后将衬底取出，旋涂PMMA溶液填充复合物表面的孔隙。
5.利用金属掩模的方法继续沉积半透明的金属Au顶电极。
6.然后在衬底底部刮涂InGa电极。
7.利用银浆和铜导线将顶电极和底电极引出，并在100oC下烘干。
8.利用光敏测试系统测试器件的光敏特性，即可得到器件对光的响应谱结果，参见附图4。
9.由响应谱看出，该传感器的敏感波长范围比较宽，从380nm到接近1050nm，响应度最高点位于805nm附近，最高响应度为4.10 mA/W.
实施例3：
在本例中，衬底放于图1中4的位置。具体步骤如下：
1.采用传统的半导体工艺清洗p-Si衬底。
2.在衬底上沉积一层100 nm的Au薄膜作为种子层。
3.将衬底和蒸发源放入可控气氛管式炉，衬底距离蒸发源13 cm，蒸发源所处的温度设为1000oC，升温速度10℃/min，保温10min，反应气氛为Ar气20 sccm和O2 8 sccm。蒸发源是0.255g ZnO粉末、0.044g碳粉、0.020g碲粉。
4.反应完成后将衬底取出，旋涂PMMA溶液填充复合物表面的孔隙。
5.利用金属掩模的方法继续沉积半透明的金属Au顶电极。
6.然后在衬底底部刮涂InGa电极。
7.利用银浆和铜导线将顶电极和底电极引出，并在100℃下烘干。
8.利用光敏测试系统测试器件的光敏特性，即可得到器件对光的响应谱结果，参见附图5。
9.由响应谱看出，该传感器的敏感波长范围比较窄，只对1000nm到1100 nm范围的光比较敏感，响应度最高点位于1040 nm附近，最高响应度为1.27 mA/W.
实施例4：
在本例中，衬底放于图1中5的位置。具体步骤如下：
1.采用传统的半导体工艺清洗p-Si衬底。
2.在衬底上沉积一层100 nm的Au薄膜作为种子层。
3.将衬底和蒸发源放入可控气氛管式炉，衬底距离蒸发源16 cm，蒸发源所处的温度设为1000oC，升温速度10℃/min，保温30min，反应气氛为Ar气20 sccm和O2 8 sccm。蒸发源是0.263g ZnO粉末、0.047g碳粉、0.030g碲粉。
4.反应完成后将衬底取出，旋涂PMMA溶液填充复合物表面的孔隙。
5.利用金属掩模的方法继续沉积半透明的金属Au顶电极。
6.然后在衬底底部刮涂InGa电极。
7.利用银浆和铜导线将顶电极和底电极引出，并在100℃下烘干。
8.利用光敏测试系统测试器件的光敏特性，即可得到器件对光的响应谱结果，参见附图6。
9.由响应谱看出，该传感器的敏感波长范围比较窄，只对1000nm到1100 nm范围的光比较敏感，响应度最高点位于1040nm附近，最高响应度为24.61 mA/W.
实施例5：
在本例中，衬底放于图1中6的位置。具体步骤如下：
1.采用传统的半导体工艺清洗p-Si衬底。
2.在衬底上沉积一层100 nm的Au薄膜作为种子层。
3.将衬底和蒸发源放入可控气氛管式炉，衬底距离蒸发源19 cm，蒸发源所处的温度设为1000oC，升温速度10℃/min，保温30min，反应气氛为Ar气20 sccm和O2 8 sccm。蒸发源是0.265g ZnO粉末、0.048g碳粉、0.026g碲粉。
4.反应完成后将衬底取出，旋涂PMMA溶液填充复合物表面的孔隙。
5.利用金属掩模的方法继续沉积半透明的金属Au顶电极。
6.然后在衬底底部刮涂InGa电极。
7.利用银浆和铜导线将顶电极和底电极引出，并在100℃下烘干。
8.利用光敏测试系统测试器件的光敏特性，即可得到器件对光的响应谱结果，参见附图7。
9.由响应谱看出，该传感器的敏感波长范围比较宽，从400nm到接近1100nm，响应度最高点位于855nm附近，最高响应度为102.41 mA/W。
Claims (6)
1.一种异质结近红外光敏传感器，其特征在于，是由热蒸发气相沉积法制备的碲锌氧复合物与p-Si形成的异质结光敏传感器，包括p型硅衬底，碲锌氧复合物，顶电极和底电极，所述碲锌氧复合物的蒸发源是由摩尔比为1：1：（0.05-0.07）的ZnO粉末、碳粉、碲粉组成。
2.根据权利要求1所述的异质结近红外光敏传感器，其特征在于，所述顶电极是半透明Au电极，底电极是铟镓电极。
3.根据权利要求1所述的异质结近红外光敏传感器，其特征在于，所述p型硅衬底电阻率为1-10Ω·cm。
4.权利要求1所述的近红外光敏传感器的制备方法，其特征在于采用如下步骤：
首先在硅衬底上沉积一层对氧化锌具有亲和性的薄膜作为种子层，然后将衬底和蒸发源同时放入可控气氛管式炉，二者距离7-16cm，控制反应温度为1000℃，升温速度10℃/min，保温10-30min，通入反应气体为Ar和O2，所述蒸发源是由摩尔比为1：1：（0.05-0.07）的ZnO粉末、碳粉、碲粉组成；
反应完成后利用金属掩模，继续用磁控溅射法镀一层半透明的Au顶电极；
最后在衬底底部刮涂铟镓电极，完成对器件的封装。
5.根据权利要求4所述的制备方法，其特征在于，所述种子层为金，其厚度为30-100nm。
6.根据权利要求4或5所述的制备方法，其特征在于，反应气体为20 sccm 的Ar气和8sccm 的O2。
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