CN105093808A - Hole layer optical proximity correction method for avoiding large aspect ratio pattern - Google Patents
Hole layer optical proximity correction method for avoiding large aspect ratio pattern Download PDFInfo
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Abstract
The present invention provides a hole layer optical proximity correction method for avoiding large aspect ratio pattern. The hole layer optical proximity correction method comprises: A, providing an original pattern to be corrected; B, providing a process model of OPC; C, calculating the hole outline according to the original pattern or the post-OPC pattern and the process model; D, calculating the EPE of each edge of the post-OPC pattern; E, determining whether the EPE meets the predetermined target, if not, performing a step F, and if so, performing a step I; F, determining whether the aspect ratio after the OPC is larger than the requirement and the lengths of the two edges in the length direction and the width direction are larger than two times the minimum segment length in each pattern, if so, performing a step G and then performing a step H, and if not, directly performing the step H; G, cutting the edge into a plurality of segments on the target layer; H, moving the edge, and returning to the step C; and I, outputting the post-OPC pattern. According to the present invention, the good fidelity can be obtained during the mask plate manufacturing process, and the high precision at the OPC simulation stage can be ensured.
Description
Technical field
The present invention relates to the optical proximity correction technical field in semiconductor fabrication process, specifically, the present invention relates to one avoids aspect than the method for figure in hole layer optical proximity correction (OpticalProximityCorrection, OPC) process.
Background technology
Along with the high speed development of integrated circuit (IC) design, how to reduce the later distortion of layout patterns photoetching and deviation, suppress the negative effect of optical proximity effect, and then improve the yield rate of chip production, key is played a part to the development of manufacture of microchips.For this problem, a kind of method that current industry generally adopts is optical proximity correction, and it reduces the deviation exposing the litho pattern obtained by the shape changing original layout figure.
In prior art, the process of optical proximity correction generally comprises: carry out optical analogy to original layout figure, obtains mimic diagram; By contrasting the mimic diagram and original layout figure that obtain, the wherein pattern of site error not in allowed band is marked, and adopt certain calibration principle to correct with the pattern of described labeling position in original layout figure, until obtain the mimic diagram meeting designing requirement.
Because the layout style of original layout figure changes with deviser, there is diversity, directly optics neighbour is carried out to original layout figure and correct and usually will obtain the to be marked and pattern that corrects in a large number, thus make trimming process spend a large amount of manpowers and time.For this reason, industry also has some methods improved calibration principle of proposition, such as: by the prior setting of the ingredient to simple patterns such as line segment, line end, turnings correction rule, make calibration principle not only comprise some simple bearing calibrations, the set of these special correction rules can also be comprised.When there is similar pattern in original layout, the described correction rule corresponding with pattern being applied in actual trimming process, to reduce the time of actual trimming process, thus improving correction efficiency, cost-saving.
In order to eliminate the impact of optical proximity effect, the figure on the actual photomask manufactured is not identical with the desired litho pattern obtained, and the figure on photomask have passed through optical proximity correction process.In addition along with characteristic dimension (CriticalDimension; CD) enter more among a small circle; the live width of the figure on mask even only has 1/3 of optical wavelength; except the optical proximity correction process of above-mentioned necessity; usually also need to be aided with around exposure figure to arrange auxiliary figure with low resolution (Sub-resolutionassistantfeature, SRAF).These auxiliary figure with low resolution are only arranged on lay photoetching mask plate, and after actual exposure, its figure can't be transferred to semiconductor devices, only play the depth of focus increasing proximity exposure figure, improve the effect of exposure degree of accuracy.
For more advanced technology node, the design of last part technology Hole layer (holelayer) has the spacing of very dense and very complicated structure.As long as reach the target at minimum edge site error (minimumedgeplacementerror), after many aspect ratio (biglength-widthratio) (being generally greater than 2.5) figures will be formed in optical proximity correction (PostOPC) domain on.
And in mask manufacture process, aspect has obviously larger feature size error (length direction has negativity error, and Width has positivity error) than figure.
In addition in OPC model, aspect also has obviously larger predicated error than figure.
For the above-mentioned problem brought than the appearance of figure by aspect, the following two kinds mode in prior art, is generally taked to overcome:
1. optimize scattering strip (scatteringbar)
For some figure, it can change the shape after OPC effectively.But in intensive spacing, there is no enough spaces to insert scattering strip.Therefore it can not address this problem up hill and dale.
2. in OPC menu, limit length breadth ratio
This enforceable method will cause the reservation of marginal position error.Some process layers with the requirement of strict characteristic dimension can not allow to do like this.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of aspect of avoiding than the hole layer optical adjacent correction method of figure, can obtain better fidelity, and guarantee to have higher degree of accuracy in the OPC dummy run phase in mask manufacture process.
For solving the problems of the technologies described above, the invention provides a kind of aspect of avoiding than the hole layer optical adjacent correction method of figure, comprising step:
A., original figure to be revised is provided;
B., the process modeling of optical proximity correction is provided;
C. the profile of hole is calculated according to the figure after described original figure or optical proximity correction and described process modeling;
D. the contiguous marginal position error revising each edge of rear figure of calculating optical;
E. judge whether described marginal position error meets intended target;
If F. described marginal position error does not meet described intended target, then for each figure, judge whether length that whether length breadth ratio after optical proximity correction is greater than requirement and two edges is in the longitudinal direction greater than the twice of minimum section length;
If the length that the length breadth ratio G. after optical proximity correction is greater than requirement and two edges is in the longitudinal direction greater than the twice of described minimum section length, then on destination layer, described edge segmentation is become multiple segmentation;
H. move described edge, return to above-mentioned steps C;
If I. described marginal position error has met described intended target, then export the figure after optical proximity correction.
Alternatively, for the judged result of above-mentioned steps F, if the length that the length breadth ratio after optical proximity correction is not greater than requirement or two edges in the longitudinal direction is not greater than the twice of described minimum section length, then directly enter step H.
Alternatively, also comprise in above-mentioned steps F:
If described marginal position error does not meet described intended target, then for each figure, after judging optical proximity correction, whether the length at two edges in the direction of the width is also greater than the twice of described minimum section length; If so, be introduced into step G, then enter step H; If not, then directly step H is entered.
Alternatively, described aspect is than referring to that the length breadth ratio of described figure is greater than 2.5.
Alternatively, in above-mentioned steps G, each described edge segmentation is become two or three segmentations.
Compared with prior art, the present invention has the following advantages:
The present invention, in each OPC circulates, except the marginal position error (EPE) at the such as every bar edge of prior art inspection, also checks the length at the length breadth ratio after each figure OPC and two edges on length direction and/or Width.When finding that the length at two edges in the excessive and a direction of length breadth ratio is excessive, by corresponding edge being divided into the multiple segmentations being greater than minimum section length, thus the length breadth ratio numerical value of figure after reducing OPC.
By reducing the numerical value of graphic aspect ratio, better fidelity can be obtained in follow-up mask manufacture process, and guaranteeing, in the OPC dummy run phase, there is higher degree of accuracy.
In addition, the present invention can reach the target of minimum edge site error, also facilitates and realizes in OPC flow process, in OPC menu, do not occur a large amount of script.
Accompanying drawing explanation
The above and other features of the present invention, character and advantage become more obvious by passing through below in conjunction with the description of drawings and Examples, wherein:
Fig. 1 is the process flow diagram of a kind of traditional hole layer optical adjacent correction method of the prior art;
Fig. 2 be one embodiment of the invention avoid aspect than the process flow diagram of the hole layer optical adjacent correction method of figure;
Fig. 3 be adopt one embodiment of the invention avoid aspect than the contrast schematic diagram of shape and mask shape after hole layer optical adjacent correction method and the OPC adopting traditional hole layer optical adjacent correction method to obtain respectively of figure.
Embodiment
In order to form contrast, description is of the present invention avoid the hole layer optical adjacent correction method of aspect than figure before, first describe before this in prior art traditional hole layer optical adjacent correction method how to perform.Fig. 1 is the process flow diagram of a kind of traditional hole layer optical adjacent correction method of the prior art; The contrast schematic diagram that Fig. 3 is shape after the traditional hole layer optical adjacent correction method of employing and the OPC avoiding aspect to obtain respectively than the hole layer optical adjacent correction method of figure adopting one embodiment of the invention and mask shape.As Fig. 1 and shown in composition graphs 3, this flow process comprises step:
Perform step S201, original figure to be revised is provided;
Perform step S202, provide the process modeling of optical proximity correction (not shown), this is a kind of OPC algorithm;
Perform step S203, calculate the simulation profile (contour) of hole according to the figure (" after OPC shape " namely in Fig. 3) after original figure or optical proximity correction and process modeling;
Perform step S204, the marginal position error at each edge of the contiguous revised figure of calculating optical (for shape and original figure after OPC each edge between gap, as shown in Figure 3);
Perform step S205, judge whether marginal position error meets intended target (target, and namely ultimate aim be identical above-mentioned original figure to be revised); If do not meet, enter step S206; If meet, then directly enter step S207;
Perform step S206, each bar edge of the contiguous revised figure of mobile optical, returns and performs above-mentioned steps S203; And
Perform step S207, export the figure after optical proximity correction." the mask shape " of the prior art in Fig. 3 be according to the optical proximity correction of this flow process after the shape of the mask (mask) made by figure.
For traditional hole layer optical adjacent correction method, generally only there is a segmentation (fragment, the unit of the movement of optical proximity correction), because its edge is shorter.In addition, for each OPC cyclic process, only check each edge marginal position error separately.
Below in conjunction with specific embodiments and the drawings, the invention will be further described; set forth more details in the following description so that fully understand the present invention; but the present invention obviously can implement with multiple this alternate manner described that is different from; those skilled in the art can when doing similar popularization, deduction without prejudice to when intension of the present invention according to practical situations, therefore should with content constraints protection scope of the present invention of this specific embodiment.
Fig. 2 be one embodiment of the invention avoid aspect than the process flow diagram of the hole layer optical adjacent correction method of figure; Fig. 3 be adopt one embodiment of the invention avoid aspect than the contrast schematic diagram of shape and mask shape after hole layer optical adjacent correction method and the OPC adopting traditional hole layer optical adjacent correction method to obtain respectively of figure.In the present embodiment, aspect is than referring to that the length breadth ratio of figure is greater than 2.5.As Fig. 2 and shown in composition graphs 3, this flow process comprises step:
Perform step S301, original figure to be revised is provided;
Perform step S302, provide the process modeling of optical proximity correction (not shown), this is a kind of OPC algorithm;
Perform step S303, calculate the simulation profile of hole according to the figure (" after OPC shape " namely in Fig. 3) after original figure or optical proximity correction and process modeling;
Perform step S304, the marginal position error at each edge of the contiguous revised figure of calculating optical (for shape and original figure after OPC each edge between gap, as shown in Figure 3);
Perform step S305, judge whether marginal position error meets intended target; If do not meet, enter step S306; If meet, then enter step S309;
Perform step S306, for each figure, judge whether the length breadth ratio after optical proximity correction is greater than requirement (spec), and whether the length at two edges on length direction and/or Width is greater than the twice of a minimum section length (L, minimumfragmentlength); If so, be introduced into step S307, then enter step S308; If not, then directly step S308 is entered;
Perform step S307, each bar edge segmentation becomes multiple segmentation (such as two or three segmentations) by destination layer;
Perform step S308, each bar edge of the contiguous revised figure of mobile optical, returns to above-mentioned steps S303; And
Perform step S309, export the figure after optical proximity correction." mask shape " of the present invention in Fig. 3 be according to the optical proximity correction of this flow process after the shape of the mask (mask) made by figure.
By contrast, for hole layer optical adjacent correction method of the present invention, hole layer edge can have multiple segmentation, as long as each segmentation meets minimum sector boss angle value.
In addition, for each OPC cyclic process, except the marginal position error checking each edge, also check the length at the length breadth ratio after each figure OPC and edge.When all excessive both finding, the corresponding edge of this figure be divided into the multiple segmentations being greater than minimum section length, then perform remaining OPC and circulate.The edge of multiple segmentation can reduce the length breadth ratio numerical value of figure after OPC.
In addition as shown in Figure 3, can understand from the shape obtained after traditional OPC flow process (prior art), it has excessive length breadth ratio, and this can have poor fidelity in mask manufacture process, thus causes the larger simulation error for wafer data.
And as can be seen from the shape obtained after OPC flow process of the present invention, its length breadth ratio has been lowered, good fidelity can be had in mask manufacture process, thus the simulation error for wafer data can have been reduced.
Although prior art and two kinds of simulation profiles of the present invention can meet intended target, new OPC method of the present invention can reduce the length breadth ratio of figure.
In sum, the present invention is in each OPC circulates, except the marginal position error (EPE) at the such as every bar edge of prior art inspection, also check the length at the length breadth ratio after each figure OPC and two edges on length direction and/or Width.When finding that the length at two edges in the excessive and a direction of length breadth ratio is excessive, by corresponding edge being divided into the multiple segmentations being greater than minimum section length, thus the length breadth ratio numerical value of figure after reducing OPC.
By reducing the numerical value of graphic aspect ratio, better fidelity can be obtained in follow-up mask manufacture process, and guaranteeing, in the OPC dummy run phase, there is higher degree of accuracy.
In addition, the present invention can reach the intended target of minimum edge site error, also facilitates and realizes in OPC flow process, in OPC menu, do not occur a large amount of script.
Although the present invention with preferred embodiment openly as above, it is not that any those skilled in the art without departing from the spirit and scope of the present invention, can make possible variation and amendment for limiting the present invention.Therefore, every content not departing from technical solution of the present invention, any amendment done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all fall within protection domain that the claims in the present invention define.
Claims (5)
1. avoid aspect than a hole layer optical adjacent correction method for figure, comprise step:
A., original figure to be revised is provided;
B., the process modeling of optical proximity correction is provided;
C. the profile of hole is calculated according to the figure after described original figure or optical proximity correction and described process modeling;
D. the contiguous marginal position error revising each edge of rear figure of calculating optical;
E. judge whether described marginal position error meets intended target;
If F. described marginal position error does not meet described intended target, then for each figure, judge whether length that whether length breadth ratio after optical proximity correction is greater than requirement and two edges is in the longitudinal direction greater than the twice of minimum section length;
If the length that the length breadth ratio G. after optical proximity correction is greater than requirement and two edges is in the longitudinal direction greater than the twice of described minimum section length, then on destination layer, described edge segmentation is become multiple segmentation;
H. move described edge, return to above-mentioned steps C;
If I. described marginal position error has met described intended target, then export the figure after optical proximity correction.
2. optical adjacent correction method according to claim 1, it is characterized in that, for the judged result of above-mentioned steps F, if the length that the length breadth ratio after optical proximity correction is not greater than requirement or two edges in the longitudinal direction is not greater than the twice of described minimum section length, then directly enter step H.
3. optical adjacent correction method according to claim 1, is characterized in that, also comprises in above-mentioned steps F:
If described marginal position error does not meet described intended target, then for each figure, after judging optical proximity correction, whether the length at two edges in the direction of the width is also greater than the twice of described minimum section length; If so, be introduced into step G, then enter step H; If not, then directly step H is entered.
4. optical adjacent correction method according to any one of claim 1 to 3, is characterized in that, described aspect is than referring to that the length breadth ratio of described figure is greater than 2.5.
5. optical adjacent correction method according to any one of claim 1 to 3, is characterized in that, in above-mentioned steps G, each described edge segmentation is become two or three segmentations.
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| CN201410163043.1A CN105093808B (en) | 2014-04-22 | 2014-04-22 | Optical proximity correction method for hole layer for avoiding large length-width ratio pattern |
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| CN201410163043.1A CN105093808B (en) | 2014-04-22 | 2014-04-22 | Optical proximity correction method for hole layer for avoiding large length-width ratio pattern |
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| CN107908072A (en) * | 2017-12-21 | 2018-04-13 | 上海华力微电子有限公司 | A kind of OPC modification methods for reducing connection aperture layer formula run time |
| CN109254494A (en) * | 2017-07-12 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | A kind of optical adjacent correction method |
| CN110426915A (en) * | 2019-08-13 | 2019-11-08 | 德淮半导体有限公司 | Optical adjacent correction method |
| CN110456615A (en) * | 2019-08-13 | 2019-11-15 | 上海华力集成电路制造有限公司 | Optical proximity correction method and its update the system |
| CN112415864A (en) * | 2020-11-24 | 2021-02-26 | 上海华力集成电路制造有限公司 | Method for determining OPC minimum segmentation length |
| CN108663897B (en) * | 2017-03-29 | 2021-06-08 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
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| CN110456615A (en) * | 2019-08-13 | 2019-11-15 | 上海华力集成电路制造有限公司 | Optical proximity correction method and its update the system |
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| CN112415864A (en) * | 2020-11-24 | 2021-02-26 | 上海华力集成电路制造有限公司 | Method for determining OPC minimum segmentation length |
| CN112415864B (en) * | 2020-11-24 | 2023-04-07 | 上海华力集成电路制造有限公司 | Method for determining OPC minimum segmentation length |
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