CN103186034A - Optical proximity correction method - Google Patents
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- CN103186034A CN103186034A CN201110459747XA CN201110459747A CN103186034A CN 103186034 A CN103186034 A CN 103186034A CN 201110459747X A CN201110459747X A CN 201110459747XA CN 201110459747 A CN201110459747 A CN 201110459747A CN 103186034 A CN103186034 A CN 103186034A
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Abstract
An optical proximity correction method includes the following steps: acquiring a current correction mask plate figure subjected to at least one time of optical proximity correction, and performing optical simulation on the current correction mask plate figure to acquire a simulation figure; comparing the simulation figure and a target figure to obtain an error of multiple border positions; when the error of the border positions is greater than a preset value and the distance from a to-be-corrected edge of the current correction mask plate figure to an adjacent mask plate figure is greater than the minimum design size of a mask plate, correcting the to-be-corrected edge of the current correction mask plate figure; when the error of the border positions is greater than a preset value and the distance from a to-be-corrected edge of the current correction mask plate figure to an adjacent mask plate figure is equal to the minimum design size of the mask plate, moving outwards an adjacent edge of the to-be-corrected edge of the current correction mask plate figure; and repeating the procedures until the error of the border positions is within the preset value. The method disclosed by the embodiment of the invention improves the efficiency of optical proximity correction.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of optical adjacent correction method.
Background technology
In semiconductor fabrication process, in order to overcome owing to critical size (Critical Dimension, dwindling and a series of optical proximity effects (Optical Proximity Effect of bringing CD), OPE), industry has adopted a lot of resolution enhance technology, and (Resolution Enhancement Technology RET), comprises optical proximity correction, phase shifting mask plate (Phase Shifting Mask, PSM) and off-axis illumination (Off Axis Illumination, technology such as OAI).
Optical proximity correction (MBOPC) method based on model is a kind of of optical adjacent correction method, be called the simulation type optical adjacent correction method again, mainly be that mimic diagram to be exposed and targeted graphical are compared, set up the modification model of figure to be exposed, the recycling emulator carries out the corrected Calculation of a succession of complexity according to parameters such as illumination condition and first prior exposure results.
In publication number is the Chinese patent application of CN 1776695A, can find with based on the relevant information of the method for model optical proximity correction.
With reference to figure 1, Fig. 1 is the schematic flow sheet of existing optical adjacent correction method based on model.Execution in step S101 obtains through the current mask correction plate figure after the optical proximity correction; Execution in step S102 carries out verification to current mask correction plate figure, obtains mimic diagram with the verification software simulation; Execution in step S103 compares mimic diagram and targeted graphical, obtains marginal position error (EPE); Execution in step S104 judges that whether marginal position error (EPE) surpasses predetermined value, if marginal position error (EPE) is greater than predetermined value, execution in step S105 revises current mask correction plate figure, and execution in step S101～S104 again; If the marginal position error is in predetermined value, execution in step S106 finishes verification.
It is limited that existing optical adjacent correction method carries out the effect of optical proximity correction.
Summary of the invention
The problem that the present invention solves provides a kind of method of optical proximity correction, improves the effect of optical proximity correction.
For addressing the above problem, the invention provides a kind of modification method of optical adjacent, comprising:
Acquisition is carried out optical analogy to current mask correction plate figure and is obtained mimic diagram to simulate the image of this mask plate figure through forming at silicon chip after photoetching process through the current mask correction plate figure after the optical proximity correction at least one times;
Mimic diagram and targeted graphical are compared, obtain a plurality of marginal position errors;
Judge that whether the marginal position error surpasses predetermined value, if the marginal position error is greater than predetermined value, be limit to be revised greater than the limit of the current mask correction plate figure of the marginal position error correspondence of predetermined value;
Whether the distance of waiting to revise limit and adjacent mask plate figure of judging current mask correction plate figure is greater than the minimum design dimension of mask plate, if the distance that the waiting of current mask correction plate figure revised limit and adjacent mask plate figure is during greater than the minimum design dimension of mask plate, limit to be revised to current mask correction plate figure is revised, when if the waiting of current mask correction plate figure revised the distance of limit and adjacent mask plate figure and equaled the minimum design dimension of mask plate, the adjacent edge of revising the limit of waiting of current mask correction plate figure is outwards moved;
Repeat said process, until the marginal position error of current mask correction plate figure within predetermined value.
Optionally, describedly judge that whether the marginal position error surpasses after the predetermined value step, also comprise step: whether judge iterations greater than pre-determined number, if iterations is less than or equal to pre-determined number, then directly the limit to be revised of current mask correction plate figure is revised; If iterations is greater than pre-determined number, that then judges current mask correction plate figure waits to revise the distance of limit and adjacent mask plate figure and the size of the minimum design dimension of mask plate, when current mask correction plate figure wait that the distance of revising limit and adjacent mask plate figure equals the minimum design dimension of mask plate the time, the adjacent edge of revising the limit of waiting of current mask correction plate figure is outwards moved, when the distance of waiting to revise limit and adjacent mask plate figure of current mask correction plate figure during greater than the minimum design dimension of mask plate, the limit to be revised of current mask correction plate figure is revised.
Optionally, after described each iteration, the adjacent edge that the waiting of current mask correction plate figure revised the limit outwards mobile distance is fixed value.
Optionally, the scope of described fixed value is 0～0.5 nanometer.
Optionally, after described each iteration, the adjacent edge that the waiting of current mask correction plate figure revised the limit outwards mobile distance is weighted value and wait that when time iteration to revise the marginal position error on limit long-pending.
Optionally, the scope of described weighted value is 0～1.
Optionally, described weighted value is fixed weight value or variable weighted value.
Optionally, when carrying out repeatedly iteration, described variable weighted value increases afterwards earlier and reduces.
Optionally, before the distance that the waiting of the current mask correction plate of described judgement figure revised limit and adjacent mask plate and the step of the minimum design dimension size of mask plate, also comprise step, when judging nearest 2～3 times iteration, whether wait to revise the limit moves, if wait to revise the limit of limit after with respect to last iteration movement is arranged, then treat and revise the limit and revise; If it is not mobile to wait to revise the limit of limit after with respect to last iteration, that carries out then that step judges current mask correction plate figure waits to revise the distance of limit and adjacent mask plate and the minimum design dimension size of mask plate.
Compared with prior art, technical solution of the present invention has the following advantages:
When the distance that the waiting of current mask correction plate figure revised limit and adjacent mask plate figure equals the mask plate minimum design dimension, waiting to revise the limit can not outwards move, current mask correction plate figure wait that revising the masked plate design rule in limit freezes, but this moment, the marginal position error was still greater than predetermined value, the adjacent edge of revising the limit of waiting of current mask correction plate figure is outwards moved, obtain the mask plate figure of new correction, the mask plate figure of new correction has bigger area with respect to the mask plate figure of original correction, when with simulation softward the mask plate figure of new correction being carried out optical analogy and obtains new mimic diagram, conditions of exposure during simulation is constant, because the mask plate area of graph of new correction increases, increased the luminous flux of the mask plate figure of new correction, it is big that the size of the feasible new mimic diagram that obtains becomes, has bigger size than original mimic diagram, new mimic diagram and the marginal position error between the targeted graphical reduce, thereby finish this optical proximity correction process, avoided endless loop, improve efficient, satisfied the requirement of photoetching process.
Further, whether the distance of waiting to revise limit and adjacent mask plate figure of judging current mask correction plate figure is before the minimum design dimension greater than mask plate, earlier judge that whether iterations is greater than pre-determined number, generally speaking, iterations is during less than pre-determined number, optical proximity correction is conventional correction, after iterations reaches predetermined value, the situation that limit to be revised can not outwards be moved just can appear, reaching the distance of waiting to revise limit and adjacent mask plate figure that predetermined value just judges current mask correction plate figure whether greater than the minimum design dimension of mask plate, carry out follow-up step then, improve the efficient of optical proximity correction.
Description of drawings
Fig. 1 is the schematic flow sheet of existing optical adjacent correction method based on model;
Fig. 2 is the schematic flow sheet of embodiment of the invention optical adjacent correction method;
Fig. 3～Fig. 6 is the structural representation of embodiment of the invention optical proximity correction process.
Embodiment
In the existing optical adjacent correction method, mimic diagram and targeted graphical are compared, obtain marginal position error (EPE, edge placement error), when marginal position error (EPE) surpasses predetermined value, the corresponding limit of revising can outwards be moved, the mask plate figure that obtains revising, then the mask plate figure of revising is simulated the mimic diagram of being simulated again again, the mimic diagram that to simulate again and targeted graphical compare again, obtain the marginal position error and judge whether the marginal position error exceeds predetermined value, so repeatedly, be positioned within the predetermined value until the marginal position error.
In order to improve the actual application ability of optical proximity correction, mask plate design rule (MRC, mask rule check) also is applied in existing optical proximity correction (OPC) process, namely the distance between the mask graph of Xiu Zhenging and the adjacent mask figure is greater than the minimum design dimension of mask plate, the resolution characteristic of minimum design dimension reaction mask plate manufacture craft, when the mask graph of revising and the distance between the adjacent mask figure are equal to or less than the minimum design dimension of mask plate, even the mask graph after the optical proximity correction is meticulous again, the figure that the mask plate manufacture craft is made on the mask plate that forms also is distortion, the inventor finds in the process of the optical proximity correction of existing through hole, when the distance between the correction limit of mask graph and the adjacent mask graph equals the minimum design dimension of mask plate, because mask plate design rule (MRC, mask rule check) restriction, the corresponding limit of revising will can outwards not moved, frozen firmly (frozen), when revising next time, frozenly wait to revise the limit and still can not move, make optical proximity correction enter endless loop, efficient is low, and the effect of optical proximity correction is limited in this case, makes the exposure figure that finally obtains can not satisfy the requirement of technology.
For addressing the above problem, the inventor proposes a kind of method of optical proximity correction, comprise: obtain current mask correction plate figure to be carried out optical analogy obtain mimic diagram to simulate the image of this mask plate figure through forming at silicon chip after photoetching process through the current mask correction plate figure after the optical proximity correction at least one times; Mimic diagram and targeted graphical are compared, obtain a plurality of marginal position errors; Judge that whether the marginal position error surpasses predetermined value, if the marginal position error is greater than predetermined value, be limit to be revised greater than the limit of the current mask correction plate figure of the marginal position error correspondence of predetermined value; Whether the distance of waiting to revise limit and adjacent mask plate figure of judging current mask correction plate figure is greater than the minimum design dimension of mask plate, if the distance that the waiting of current mask correction plate figure revised limit and adjacent mask plate figure is during greater than the minimum design dimension of mask plate, limit to be revised to current mask correction plate figure is revised, when if the waiting of current mask correction plate figure revised the distance of limit and adjacent mask plate figure and equaled the minimum design dimension of mask plate, the adjacent edge of revising the limit of waiting of current mask correction plate figure is outwards moved; Repeat said process, until the marginal position error of current mask correction plate figure within predetermined value.
Before revising, that judges current mask correction plate figure waits to revise the distance of limit and adjacent mask plate figure and the size of the minimum design dimension of mask plate, when the distance that the waiting of current mask correction plate figure revised limit and adjacent mask plate figure equals the minimum design dimension of mask plate, the adjacent edge of revising the limit of waiting of current mask correction plate figure is outwards moved, increase the window for the treatment of mask graph, make and reduce in the mimic diagram that draws of simulation and the marginal position error between the targeted graphical under the identical conditions of exposure, until reaching within the predetermined value, avoided optical proximity correction to enter endless loop, improve efficient, be met the mask plate correction pattern of technology.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
With reference to figure 2, Fig. 2 is the schematic flow sheet of embodiment of the invention optical adjacent correction method, comprising:
Step S201 obtains through the current mask correction plate figure after the optical proximity correction at least one times;
Step S202 carries out optical analogy to current mask correction plate figure and obtains mimic diagram to simulate the image of this mask plate figure through forming at silicon chip after the photoetching process;
Step S203 compares mimic diagram and targeted graphical, obtains a plurality of marginal position errors;
Step S204 judges whether the marginal position error surpasses predetermined value, if the marginal position error greater than predetermined value, enters step S205; If the marginal position error is less than or equal to predetermined value, enter step S209, revise and finish;
Whether step S205 judges iterations greater than pre-determined number, if iterations greater than pre-determined number, enters step S206; Institute's iterations is less than or equal to pre-determined number, enters step S207;
Step S206, whether the distance of waiting to revise limit and adjacent mask plate figure of judging current mask correction plate figure is greater than the minimum design dimension of mask plate, if the waiting of current mask correction plate figure revised the distance of limit and adjacent mask plate figure greater than the minimum design dimension of mask plate, enter step S207; If the waiting of current mask correction plate figure revised the minimum design dimension that the distance of limit and adjacent mask plate figure equals mask plate, enter step S208;
Step S207 revises repeating step S201 to S204 to current mask correction plate figure;
Step S208 waits that the adjacent edge of revising the limit is outwards mobile, repeating step S201 to S204 with current mask correction plate figure;
Step S209 revises and finishes.
Fig. 3～Fig. 6 is the structural representation of embodiment of the invention optical proximity correction process.
Execution in step S201 obtains through the current mask correction plate figure after the optical proximity correction at least one times.
With reference to figure 3, the current mask correction plate figure 301 through optical proximity correction is provided, be example with current mask correction plate figure 301 in this example, described current mask correction plate figure 301 correspondences be the mask plate figure of through hole.Describedly refer to through the mask plate figure of optical proximity correction at least one times through the current mask correction plate figure 301 after the optical proximity correction.Also comprise around the current mask correction plate figure 301 and having revised or uncorrected mask plate figure.Need to prove that current mask correction plate figure 301 among Fig. 3 and the layout of mask plate figure around it only are example, should not limit protection scope of the present invention.
Execution in step S202 carries out optical analogy to current mask correction plate figure and obtains mimic diagram to simulate the image of this mask plate figure through forming at silicon chip after the photoetching process.
Adopt verification software that current mask correction plate figure is carried out verification, and obtain mimic diagram with the verification software simulation, in order to simulate the image of this mask plate figure through forming at silicon chip after the photoetching process.With reference to figure 4, mimic diagram 303 is that simulation obtains current mask correction plate figure 301 shown in Figure 2 through verification software among Fig. 4.Mimic diagram described in the embodiment of the invention 303 is through hole.
Execution in step S203 compares mimic diagram and targeted graphical, obtains a plurality of marginal position errors.
Described targeted graphical, be generally the figure in the semiconductor device design domain, its characteristic dimension satisfies semiconductor devices simultaneously and electrically requires and the photoetching process requirement, in the optical proximity correction process with the characteristic dimension of targeted graphical as the desired value of revising, in order to the mimic diagram comparison and judge whether to reach standard.
With reference to figure 4, targeted graphical 304 is for being used as the figure that compares with mimic diagram 303, and targeted graphical 304 is square, and the length of side of targeted graphical 304 equals the characteristic dimension that photoetching process requires.When mimic diagram 303 and targeted graphical 304 were compared, the center of circle of mimic diagram 303 overlapped with the center of targeted graphical 304, and marginal position error A is the vertical range of the round edge tangent line of each limit of targeted graphical 304 and corresponding simulating figure 303.Each limit of targeted graphical 304 is corresponding with each limit of current mask correction plate figure, it is the top of the corresponding current mask correction plate figure in top of targeted graphical 304, after mimic diagram 303 and targeted graphical 304 corresponding limits are compared the marginal position error of acquisition, if the marginal position error is during greater than predetermined value, the limit that current mask correction plate figure is revised is the limit corresponding with targeted graphical 304, the limit that current mask correction plate figure need be revised is also referred to as limit to be revised, and it is corresponding with the marginal position error greater than predetermined value to wait to revise the limit.
Execution in step S204 judges whether the marginal position error surpasses predetermined value, if the marginal position error greater than predetermined value, enters step S205; If the marginal position error is less than or equal to predetermined value, enter step S209, revise and finish.
Described predetermined value can be empirical value or experiment value, also can be the arbitrary value of definition.
Whether execution in step S205 judges iterations greater than pre-determined number, if iterations greater than pre-determined number, enters step S206; Institute's iterations is less than or equal to pre-determined number, enters step S207.
In the optical proximity correction process, basically incipient iteration several times is normal makeover process, when namely revising on the limit to be revised of current mask correction plate figure, the limit to be revised of current mask correction plate figure can normally move in or out, the waiting of current mask correction plate figure revises the limit and the adjacent distance of covering mask graph can be greater than the minimum design dimension of mask plate, at this moment can not be subjected to mask plate design rule (MRC, mask rule check) restriction, when marginal position error during always greater than predetermined value, then makeover process is carrying out always, iterations constantly increases, the distance of revising limit and adjacent mask plate figure of waiting until current mask correction plate figure equals the minimum dimension that mask plate designs, the limit to be revised of current mask correction plate figure can not be outwards mobile again, and masked plate design rule freezes.Therefore after judging that the marginal position error is greater than predetermined value, directly do not carry out the distance of waiting to revise limit and adjacent mask plate figure that follow-up step S206 judges current mask correction plate figure whether greater than the minimum design dimension of mask plate, whether judge iterations greater than pre-determined number but carry out step S205 earlier, improve the efficient of optical proximity correction.Generally speaking, pre-determined number is 10～20 times, and iterations is during less than pre-determined number, optical proximity correction is conventional correction, when iterations reached pre-determined number, end had been revised on the limit that current mask correction plate figure can be revised substantially, the limit of freezing except masked plate design rule.
Execution in step S206, whether the distance of waiting to revise limit and adjacent mask plate figure of judging current mask correction plate figure is greater than the minimum design dimension of mask plate, if the waiting of current mask correction plate figure revised the distance of limit and adjacent mask plate figure greater than the minimum design dimension of mask plate, enter step S207; If the waiting of current mask correction plate figure revised the minimum design dimension that the distance of limit and adjacent mask plate figure equals mask plate, enter step S208.
Limit greater than the current mask correction plate figure of the marginal position error correspondence of predetermined value is limit to be revised.The distance of waiting to revise limit and adjacent mask plate figure of judging current mask correction plate figure whether greater than the minimum design dimension of mask plate be for judge current mask correction plate figure wait revise the limit whether masked plate design rule freeze.Before the distance that the waiting of the current mask correction plate of described judgement figure revised limit and adjacent mask plate and the step of the minimum design dimension size of mask plate, also comprise step, when judging nearest 2～3 times iteration, whether wait to revise the limit moves, if wait to revise the limit of limit after with respect to last iteration movement is arranged, then treat and revise the limit and revise; If it is not mobile to wait to revise the limit of limit after with respect to last iteration, that carries out then that step judges current mask correction plate figure waits to revise the distance of limit and adjacent mask plate and the minimum design dimension size of mask plate, guarantees efficient and the accuracy of optical proximity correction.
With reference to figure 3, suppose limit that current mask correction plate figure 301 masked plate design rules freeze for waiting to revise limit 31, that namely waits to revise limit 31 and adjacent mask plate figure 302 equals the mask plate minimum design dimension apart from B.The figure of adjacent mask described in the embodiment of the invention refers to that the extended line of waiting to revise the adjacent edge on limit with current mask correction plate figure has and intersects and mask graph that vertical range is nearest.
Execution in step S207 revises repeating step S201 to S204 to current mask correction plate figure.
In this step current mask correction plate figure is carried out the mask plate figure makeover process that optical proximity correction is existing conventional, after finishing this step, repeating step S201 to S204.
Execution in step S208 waits that the adjacent edge of revising the limit is outwards mobile, repeating step S201 to S204 with current mask correction plate figure.
When the distance that the waiting of current mask correction plate figure revised limit and adjacent mask plate equals the minimum design dimension size of mask plate, be current mask correction plate figure wait that revising the masked plate design rule in limit freezes, the adjacent edge of revising the limit of waiting of current mask correction plate figure is outwards moved, generally, the limit to be revised that masked plate design rule freezes can not be outwards mobile again, the distance of revising limit and adjacent mask plate of waiting that is current mask correction plate figure equals the minimum design dimension size of mask plate, if fruit occur current mask correction plate figure wait revise the distance of limit and adjacent mask plate less than the situation of the minimum design dimension size of mask plate, it distance of revising limit and adjacent mask plate of waiting that is considered as current mask correction plate figure is equaled the situation of the minimum design dimension size of mask plate.
After each iteration, the adjacent edge that the waiting of described current mask correction plate figure revised the limit outwards mobile distance is fixed value.Described fixed value is generally very little, the scope of described fixed value is 0～0.5 nanometer, and preferred described fixed value can be 0.05 nanometer, 0.1 nanometer, 0.15 nanometer, 0.2 nanometer, 0.25 nanometer, 0.3 nanometer, 0.35 nanometer, 0.4 nanometer, 0.45 nanometer, 0.5 nanometer.When mobile distance is fixed value, feasible each mobile fixed distance, method of operating is simple.
After each iteration, the adjacent edge that the waiting of described current mask correction plate figure revised the limit outwards mobile distance is weighted value and wait that when time iteration to revise the marginal position error on limit long-pending.The scope of described weighted value is 0～1.Determine the outside mobile distance of adjacent edge by weighted value and when the amassing of marginal position error of revising the limit of waiting of time iteration, improved precision and the efficient of optical adjacent.
Described weighted value is the fixed weight value, and described fixed weight value can be 0.1,0.2,0.3,0.4,0.5,0.6,0.8,0.9,1.
Described weighted value is variable weighted value for the fixed weight value, when carrying out repeatedly iteration, described variable weighted value increases afterwards earlier and reduces, for example in nearest 3 iterative process, described weighted value is increased to 0.5 by 0.3 earlier and is reduced to 0.3 by 0.5 then, make weighted value that the process of a convergence be arranged, improved the precision of optical proximity correction.
With reference to figure 5, current mask correction plate figure 301 waits to revise the limit that freeze for the mask plate design rule on limit 31 among Fig. 5, waiting to revise limit 31 can not outwards move, but this moment, the marginal position error was still greater than predetermined value, in the embodiment of the invention, two adjacent edges 32 revising limit 31 of waiting of current mask correction plate figure 301 are all outwards moved, obtain the mask plate figure 301a of new correction, the mask plate figure 301a of new correction has bigger area with respect to the mask plate figure 301 of original correction, when with simulation softward the mask plate figure 301a of new correction being carried out optical analogy and obtains new mimic diagram, conditions of exposure during simulation is constant, because the area of the mask plate figure 301a of new correction increases, increased the luminous flux by the mask plate figure 301a of new correction, it is big that the size of the feasible new mimic diagram that obtains becomes, please refer to Fig. 6, mimic diagram 303a is the new mimic diagram through simulation, has bigger size than original mimic diagram 303, new mimic diagram 303a and the marginal position error between the targeted graphical 304 reduce, thereby finish this optical proximity correction process, avoided endless loop, improve efficient, satisfied the requirement of photoetching process.What the outside movement of indication referred to current mask correction plate figure in the embodiment of the invention waits that revising the edge moves to the opposite direction of current mask correction plate centre of figure.
In concrete implementation process, the waiting of current mask correction plate figure 301 revised the whole process of outside movement of the adjacent edge 32 on limit 31 can be for once finishing also and can repeatedly finish in the iterative process in the iterative process.For fear of the influence of the distance of adjacent mask graph and adjacent edge, when the adjacent edge 32 of mobile current mask correction plate figure 301, mobile wherein adjacent edge 32 only.
Execution in step S209 revises and finishes.(be less than or equal to predetermined value) when the marginal position error reaches in the predetermined value, the optical adjacent process finishes.
To sum up, the method of the optical proximity correction that the embodiment of the invention provides, when current mask correction plate figure wait that the distance of revising limit and adjacent mask plate figure equals the mask plate minimum design dimension time, waiting to revise the limit can not outwards move, current mask correction plate figure wait that revising the masked plate design rule in limit freezes, but this moment, the marginal position error was still greater than predetermined value, the adjacent edge of revising the limit of waiting of current mask correction plate figure is outwards moved, obtain the mask plate figure of new correction, the mask plate figure of new correction has bigger area with respect to the mask plate figure of original correction, when with simulation softward the mask plate figure of new correction being carried out optical analogy and obtains new mimic diagram, conditions of exposure during simulation is constant, because the mask plate area of graph of new correction increases, increased the luminous flux of the mask plate figure of new correction, it is big that the size of the feasible new mimic diagram that obtains becomes, has bigger size than original mimic diagram, new mimic diagram and the marginal position error between the targeted graphical reduce, thereby finish this optical proximity correction process, avoided endless loop, improve efficient, satisfied the requirement of photoetching process.
Further, whether the distance of waiting to revise limit and adjacent mask plate figure of judging current mask correction plate figure is before the minimum design dimension greater than mask plate, earlier judge that whether iterations is greater than pre-determined number, generally speaking, iterations is during less than pre-determined number, optical proximity correction is conventional correction, after iterations reaches predetermined value, the situation that limit to be revised can not outwards be moved just can appear, reaching the distance of waiting to revise limit and adjacent mask plate figure that predetermined value just judges current mask correction plate figure whether greater than the minimum design dimension of mask plate, carry out follow-up step then, improve the efficient of optical proximity correction.
Though the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection domain of technical solution of the present invention according to technical spirit of the present invention.
Claims (9)
1. an optical adjacent correction method is characterized in that, comprising:
Acquisition is carried out optical analogy to current mask correction plate figure and is obtained mimic diagram to simulate the image of this mask plate figure through forming at silicon chip after photoetching process through the current mask correction plate figure after the optical proximity correction at least one times;
Mimic diagram and targeted graphical are compared, obtain a plurality of marginal position errors;
Judge that whether the marginal position error surpasses predetermined value, if the marginal position error is greater than predetermined value, be limit to be revised greater than the limit of the current mask correction plate figure of the marginal position error correspondence of predetermined value;
Whether the distance of waiting to revise limit and adjacent mask plate figure of judging current mask correction plate figure is greater than the minimum design dimension of mask plate, if the distance that the waiting of current mask correction plate figure revised limit and adjacent mask plate figure is during greater than the minimum design dimension of mask plate, limit to be revised to current mask correction plate figure is revised, when if the waiting of current mask correction plate figure revised the distance of limit and adjacent mask plate figure and equaled the minimum design dimension of mask plate, the adjacent edge of revising the limit of waiting of current mask correction plate figure is outwards moved;
Repeat said process, until the marginal position error of current mask correction plate figure within predetermined value.
2. optical adjacent correction method as claimed in claim 1, it is characterized in that, describedly judge that whether the marginal position error surpasses after the predetermined value step, also comprise step: judge that whether iterations is greater than pre-determined number, if iterations is less than or equal to pre-determined number, then directly the limit to be revised of current mask correction plate figure is revised; If iterations is greater than pre-determined number, that then judges current mask correction plate figure waits to revise the distance of limit and adjacent mask plate figure and the size of the minimum design dimension of mask plate, when if the waiting of current mask correction plate figure revised the distance of limit and adjacent mask plate figure and equaled the minimum design dimension of mask plate, the adjacent edge of revising the limit of waiting of current mask correction plate figure is outwards moved, if the distance that the waiting of current mask correction plate figure revised limit and adjacent mask plate figure during greater than the minimum design dimension of mask plate, is revised the limit to be revised of current mask correction plate figure.
3. optical adjacent correction method as claimed in claim 2 is characterized in that, after described each iteration, the adjacent edge that the waiting of current mask correction plate figure revised the limit outwards mobile distance is fixed value.
4. optical adjacent correction method as claimed in claim 3 is characterized in that, the scope of described fixed value is 0～0.5 nanometer.
5. optical adjacent correction method as claimed in claim 2, it is characterized in that, after described each iteration, the adjacent edge that the waiting of current mask correction plate figure revised the limit outwards mobile distance is weighted value and wait that when time iteration to revise the marginal position error on limit long-pending.
6. optical adjacent correction method as claimed in claim 5 is characterized in that, the scope of described weighted value is 0～1.
7. optical adjacent correction method as claimed in claim 5 is characterized in that, described weighted value is fixed weight value or variable weighted value.
8. optical adjacent correction method as claimed in claim 7 is characterized in that, when carrying out repeatedly iteration, described variable weighted value increases afterwards earlier and reduces.
9. optical adjacent correction method as claimed in claim 2, it is characterized in that, before the distance that the waiting of the current mask correction plate of described judgement figure revised limit and adjacent mask plate and the step of the minimum design dimension size of mask plate, also comprise step, when judging nearest 2～3 times iteration, wait to revise the limit and whether move, if wait to revise the limit of limit after with respect to last iteration movement is arranged, then treat and revise the limit and revise; If it is not mobile to wait to revise the limit of limit after with respect to last iteration, that carries out then that step judges current mask correction plate figure waits to revise the distance of limit and adjacent mask plate and the minimum design dimension size of mask plate.
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| CN103869600A (en) * | 2014-04-09 | 2014-06-18 | 上海集成电路研发中心有限公司 | Optical proximity correction method |
| CN104166305A (en) * | 2014-08-27 | 2014-11-26 | 上海华力微电子有限公司 | OPC method for reducing correction iterations |
| CN104698761A (en) * | 2013-12-05 | 2015-06-10 | 中芯国际集成电路制造(上海)有限公司 | OPC model calibration method based on area |
| CN105044941A (en) * | 2015-08-03 | 2015-11-11 | 深圳市华星光电技术有限公司 | Photolithographic pattern size detection method |
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| CN105044941A (en) * | 2015-08-03 | 2015-11-11 | 深圳市华星光电技术有限公司 | Photolithographic pattern size detection method |
| CN105044941B (en) * | 2015-08-03 | 2018-01-12 | 深圳市华星光电技术有限公司 | The size detecting method of litho pattern |
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