CN104166305A - OPC method for reducing correction iterations - Google Patents
OPC method for reducing correction iterations Download PDFInfo
- Publication number
- CN104166305A CN104166305A CN201410428712.3A CN201410428712A CN104166305A CN 104166305 A CN104166305 A CN 104166305A CN 201410428712 A CN201410428712 A CN 201410428712A CN 104166305 A CN104166305 A CN 104166305A
- Authority
- CN
- China
- Prior art keywords
- opc
- original
- new
- iterations
- correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides an OPC method for reducing correction iterations. The OPC method comprises the following steps: executing an OPC process, thereby obtaining an original OPC correction diagram via original iterations; verifying the original OPC correction diagram; finding out the difference between the original correction diagram and a target diagram as the original OPC correction quantity, and setting the supercritical value of the original OPC correction; marking a target diagram with the original OPC correction quantity exceeding the critical value of the original OPC correction in the original OPC correction diagram; setting new iterations, executing the new OPC iteration process, and assigning the original OPC correction quantity to the marked target diagram in the first time of iteration; acquiring and verifying the new OPC correction diagram; and judging whether the verification result of the OPC correction diagram is within the error standard, if yes, taking the new iterations as the new OPC iterations, and if not, adding one to the new iterations, and executing the new OPC process again until the verification result of the new OPC is within the error standard, so that the OPC precision is ensured, and the time is saved.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of OPC method of revising iterations that reduces.
Background technology
In deep-submicron semiconductor fabrication, along with characteristic dimension constantly reduce become more and more higher with figure complexity, OPC technology is during the mask of widespread use and each key level has been published.The OPC method being most widely used is at present the OPC modification method based on model, its ultimate principle is by setting up the exposure model based on specific etching condition, original layout or target domain are simulated to obtain simulation error, then original layout is carried out to segmentation cutting by certain rule, according to simulation error, segment is carried out to migration simulation again, domain after the simulation of the several bouts correction consistent with target domain with obtaining analog result with correction.
Based on model OPC method, in makeover process, generally will experience repeatedly and revise (revise and be called an iteration each time), until revised analog result meets targeted graphical, or the error of the revised analogue value and desired value is in allowed band.The time that OPC revises depends primarily on the number of times of iteration, and the number of times of iteration is more, and the number of times of revising and simulating is more, and total OPC correction time is just longer, and as shown in Figure 1, along with the minimizing of iterations, the OPC correction time is corresponding minimizing also; Yet the accuracy of revising in order to ensure OPC, repeatedly iteration is necessary, as shown in Figure 1, schematic diagram for the result of the OPC of different iterationses, when iterations reduces to 5 times gradually from 10 times, the Pinch number increase sharply that reports an error, the minimum value of pinch CD also declines to some extent, and this has all shown that iterations reduces the impact on OPC accuracy.
OPC revises and conventionally can be applied in lithography process.It is nonlinear in lithography process, being subject to figure deformation or distortion that the impact of optical approach effect causes, both relevant with lithography process condition, be subject to again the impact of figure itself, if the distortion of general targeted graphical is smaller, the number of times that need to carry out iteration is just fewer, because its correction is also relatively little, and if the distortion of targeted graphical is larger, need more correction to go to make up aliasing, due to complicated influencing each other between figure, conventionally need to repeatedly revise and approach best result, also need repeatedly OPC iteration.However, be conventionally also difficult to guarantee that all figures can both reach expected result after OPC revises.
In theory, OPC iterations is more, and the OPC accuracy that can reach is also better.Yet be subject to the restriction of product frequence of issue, OPC working time must be in rational scope.For when guaranteeing OPC accuracy, also want the OPC execution time in reasonable acceptable scope, normally according to the size of characteristic dimension, the complexity of figure, the impacts of approach effect etc. are because usually formulating a rational OPC iterations, thus execution OPC process.And traditional OPC method based on model is generally considered the impact of edge placement error, and do not consider the impact that the variation of mask plate scale error, etching condition offset variation etc. are brought the precision of OPC.Therefore, reduce the decline that iterations causes OPC precision on the contrary.
Summary of the invention
In order to overcome above problem, the invention provides a kind of OPC method that reduces iterations, in the targeted graphical of the original OPC correction assignment that gap between targeted graphical and the revised figure of original OPC is formed in the iterative process for the first time of new OPC process, reduce OPC iterations simultaneously, thereby under not declining prerequisite, OPC precision do not reduce the OPC correction time
To achieve these goals, the invention provides to a kind of OPC method of revising iterations that reduces, it comprises the following steps:
Step 01: carry out OPC process, after certain original iterations, obtain original OPC correction pattern; And original OPC correction pattern is verified, be verified result;
Step 02: the gap of finding out original OPC correction pattern and targeted graphical is original OPC correction, and set the critical value that original OPC revises;
Step 03: the targeted graphical that the original OPC correction in original OPC correction pattern is surpassed to the critical value of original OPC correction carries out mark;
Step 04: set new iterations, carry out new OPC iterative process; Wherein, in iteration for the first time, by described original OPC correction assignment in the targeted graphical of described mark;
Step 05: obtain new OPC correction pattern, and verify new OPC correction pattern, be verified result;
Step 06: set the error criterion of the result of new OPC correction pattern, and the result that judges new OPC correction pattern is whether in error criterion;
Step 07: described new OPC the result in described error criterion, the iterations that described new iterations is described new OPC; Otherwise, make described new iterations add again 1, and re-execute new OPC process, until the result of described new OPC is in described error criterion;
Step 08: finish new OPC process.
Preferably, the critical value that described original OPC revises be described original OPC correction pattern and described targeted graphical gap peaked 1/3.
Preferably, in described step 05, set new iterations and be half of original iterations.
Preferably, in described step 03, according to the graphic feature of described targeted graphical, carry out mark.
Preferably, described graphic feature comprise the adjacent pattern of described targeted graphical size, with the distance of adjacent pattern and the size of described targeted graphical.
Preferably, the size of described targeted graphical comprises live width or spacing.
The OPC method of minimizing iterations of the present invention, in the targeted graphical of the original OPC correction assignment forming by the gap between targeted graphical and the revised figure of original OPC just in iterative process for the first time, and in conjunction with reducing OPC iterations, thereby can guarantee under the condition of OPC accuracy, reduce the OPC correction time, improve and revise efficiency.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the result of the OPC of different iterationses
Fig. 2 is the schematic flow sheet of OPC method of the minimizing iterations of a preferred embodiment of the present invention
Fig. 3 is the targeted graphical of a preferred embodiment of the present invention and the contrast schematic diagram of the revised figure of original OPC
Fig. 4 is the schematic diagram of graphic feature of the targeted graphical of a preferred embodiment of the present invention
Fig. 5 a-5b is the result of the new OPC of a preferred embodiment of the present invention, wherein, and the result that Fig. 5 a is pinch, the result that Fig. 5 b is bridge
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
Below with reference to accompanying drawing 2-5 and specific embodiment, the OPC method of minimizing iterations of the present invention is described in further detail.It should be noted that, accompanying drawing all adopts very the form simplified, uses non-ratio accurately, and only in order to object convenient, that clearly reach aid illustration the present embodiment.
Referring to Fig. 2, is the schematic flow sheet of the OPC method of the minimizing iterations of a preferred embodiment of the present invention, and the OPC method of the minimizing iterations of this enforcement, specifically comprises the following steps:
Step 01: carry out OPC process, after certain original iterations, obtain original OPC correction pattern; And original OPC correction pattern is verified, be verified result;
Concrete, OPC process can adopt existing OPC method, and in the present embodiment, original iterations can be 10.OPC iterative process and OPC proof procedure can be used the Calibre software of Mentor, and the present invention is not restricted this.
Step 02: the gap of finding out original OPC correction pattern and targeted graphical is original OPC correction, and set the critical value that original OPC revises;
Concrete, the critical value that original OPC revises can be set as original OPC correction pattern and targeted graphical gap peaked 1/3, for example, the gap of original OPC correction pattern and targeted graphical has 2nm, 3nm, 5nm, 15nm, 22nm, 47nm, 60nm, the maximal value of these gaps is 60nm, and the critical value setting of now original OPC being revised is 20nm; The critical value that original OPC revises is too little of iteration assignment is nonsensical for the first time below, and too large impact is the effect of iteration assignment for the first time.Referring to Fig. 3, is the targeted graphical of a preferred embodiment of the present invention and the contrast schematic diagram of the revised figure of original OPC.Original OPC correction pattern is solid line, targeted graphical is dotted line, the difference that gap between dotted line and solid line is original OPC correction pattern and targeted graphical that is to say original OPC correction, sets the critical value that peaked 1/3 in these gaps are revised for original OPC.In new OPC process, for original OPC correction, surpass the mode that targeted graphical that original OPC revises critical value adopts assignment in OPC iteration for the first time, can guarantee to reduce OPC iterations in the situation of OPC precision.
Step 03: the targeted graphical that the original OPC correction in original OPC correction pattern is surpassed to the critical value of original OPC correction carries out mark;
Concrete, can carry out mark according to the graphic feature of targeted graphical.Graphic feature comprise the adjacent pattern of targeted graphical size, with the distance of adjacent pattern and the size of targeted graphical.The size of targeted graphical comprises live width or spacing.
It should be noted that, the targeted graphical that why the original OPC correction in original OPC correction pattern will be surpassed to the critical value that original OPC revises carry out mark be because: the gap between the revised figure of original OPC makeover process and targeted graphical, obtains by repeatedly revising and simulating; The place that these gaps are larger, the iterations needing is also more, and the less place of these gaps, the iterations needing is fewer; Therefore, the figure that these gaps is surpassed to the critical value of original OPC correction carries out mark, carries out assignment and reduce iterations so that follow-up.
For example, the gap of original OPC correction pattern and targeted graphical has 2nm, 3nm, 5nm, 15nm, 22nm, 47nm, 60nm, and these are original OPC correction; The maximal value of these gaps is 60nm, and the critical value setting of now original OPC being revised is 20nm; By gap, be that 22nm, 47nm, the corresponding targeted graphical of 60nm carry out mark.
Referring to Fig. 4, is the schematic diagram of the graphic feature of the targeted graphical of a preferred embodiment of the present invention; In Fig. 4, targeted graphical is line segment A, and the graphic feature of line segment A comprises: the size of adjacent segments B and C, line segment A and around the distance S of figure and the figure live width of T and line segment A.
Step 04: set new iterations, carry out new OPC iterative process; Wherein, in iteration for the first time, by original OPC correction assignment in the targeted graphical of mark; Concrete, please again consult Fig. 3, line segment X1 and X2 are the targeted graphical of mark, in the iteration for the first time of new OPC process, by original OPC correction assignment in line segment X1 and X2, the original OPC correction of line segment X1 in iteration is for the first time negative M1, and the original OPC correction of line segment X2 in iteration is for the first time positive M2.
For example, the gap of original OPC correction pattern and targeted graphical has 2nm, 3nm, 5nm, 15nm, 22nm, 47nm, 60nm, and these are original OPC correction; The maximal value of these gaps is 60nm, and the critical value setting of now original OPC being revised is 20nm; By gap, be that 22nm, 47nm, the corresponding targeted graphical of 60nm carry out mark; In iterative process for the first time, by original OPC correction 22nm, 47nm, 60nm respectively assignment in its corresponding targeted graphical.
Here, setting new iterations can be half of original iterations, is 5 times here.New OPC iterative process and new OPC proof procedure can be used the Calibre software of Mentor, and the present invention is not restricted this.Step 05: obtain new OPC correction pattern, and verify new OPC correction pattern, be verified result;
Concrete, to the result of new OPC figure, can comprise: new OPC figure is simulated and check whether have the narrow down place of (pinch) of figure pitch smaller (bridge) and figure live width.
Step 06: set the error criterion of the result of new OPC correction pattern, and the result that judges new OPC correction pattern is whether in error criterion;
Concrete, refer to Fig. 5 a-5b, be the result of the new OPC of a preferred embodiment of the present invention, wherein, the result that Fig. 5 a is pinch, the result that Fig. 5 b is bridge.Set the number that reports an error of bridge and pinch in the result of new OPC and be all no more than 150, that is to say that error criterion is 150.
Step 07: new OPC the result is in error criterion, and new iterations is the iterations of new OPC; Otherwise, make new iterations add again 1, and re-execute new OPC process, until new OPC the result is in error criterion.
Concrete, consult Fig. 5 a and Fig. 5 b, when new iterations is 5 times, the number that reports an error of bridge is 97, and the number that reports an error of pinch is 453, has surpassed the error criterion 150 setting, not within the scope of error criterion, new iterations is increased by 1 time again, be 6 times, re-execute new OPC process; Again consult Fig. 5 a and Fig. 5 b, when new iterations is 6 times, the number that reports an error of bridge is 98, and the number that reports an error of pinch is 230, still surpassed 150, continue to increase by 1 iterations, new iterations is 7 times, and re-executes new OPC process; Again consult Fig. 5 a and Fig. 5 b, when new iterations is 7 times, the bridge number that reports an error is that 97, the pinch number that reports an error is that the number that reports an error of 125, bridge and pinch is all less than 150, determines that new iterations is 7 times.In order to determine whether the in addition less number that reports an error, then continue to increase by 1 iterations, when new iterations is 8 times, find that the bridge number that reports an error is that 324, the pinch number that reports an error is 47, exceeded error criterion, cast out.Therefore, finally determine that new iterations is 7 times.
Step 08: finish new OPC process.
As can be seen here, than traditional OPC method, the OPC method of minimizing iterations of the present invention, in the targeted graphical of the original OPC correction assignment forming by the gap between targeted graphical and the revised figure of original OPC just in iterative process for the first time, reduced OPC iterations, thereby can not reduce under the condition of OPC precision, reduce the OPC correction time, improve and revise efficiency.
Although the present invention discloses as above with preferred embodiment; right described embodiment only gives an example for convenience of explanation; not in order to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection domain that the present invention advocates should be as the criterion with described in claims.
Claims (6)
1. reduce an OPC method of revising iterations, it is characterized in that, comprise the following steps:
Step 01: carry out OPC process, after certain original iterations, obtain original OPC correction pattern; And original OPC correction pattern is verified, be verified result;
Step 02: the gap of finding out original OPC correction pattern and targeted graphical is original OPC correction, and set the critical value that original OPC revises;
Step 03: the targeted graphical that the original OPC correction in original OPC correction pattern is surpassed to the critical value of original OPC correction carries out mark;
Step 04: set new iterations, carry out new OPC iterative process; Wherein, in iteration for the first time, by described original OPC correction assignment in the targeted graphical of described mark;
Step 05: obtain new OPC correction pattern, and verify new OPC correction pattern, be verified result;
Step 06: set the error criterion of the result of new OPC correction pattern, and the result that judges new OPC correction pattern is whether in error criterion;
Step 07: described new OPC the result in described error criterion, the iterations that described new iterations is described new OPC; Otherwise, make described new iterations add again 1, and re-execute new OPC process, until the result of described new OPC is in described error criterion;
Step 08: finish new OPC process.
2. the OPC method of minimizing correction iterations according to claim 1, is characterized in that, the critical value that described original OPC revises be described original OPC correction pattern and described targeted graphical gap peaked 1/3.
3. the OPC method of minimizing correction iterations according to claim 1, is characterized in that, in described step 05, sets new iterations and be half of original iterations.
4. the OPC method of minimizing correction iterations according to claim 1, is characterized in that, in described step 03, according to the graphic feature of described targeted graphical, carries out mark.
5. the OPC method of minimizing correction iterations according to claim 3, is characterized in that, described graphic feature comprise the adjacent pattern of described targeted graphical size, with the distance of adjacent pattern and the size of described targeted graphical.
6. the OPC method of minimizing correction iterations according to claim 4, is characterized in that, the size of described targeted graphical comprises live width or spacing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410428712.3A CN104166305B (en) | 2014-08-27 | 2014-08-27 | OPC method for reducing correction iteration times |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410428712.3A CN104166305B (en) | 2014-08-27 | 2014-08-27 | OPC method for reducing correction iteration times |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104166305A true CN104166305A (en) | 2014-11-26 |
CN104166305B CN104166305B (en) | 2020-10-02 |
Family
ID=51910188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410428712.3A Active CN104166305B (en) | 2014-08-27 | 2014-08-27 | OPC method for reducing correction iteration times |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104166305B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109543330A (en) * | 2018-11-30 | 2019-03-29 | 上海华力微电子有限公司 | A kind of optical adjacent correction method pixel-based and system of Self Matching |
CN111505898A (en) * | 2020-04-26 | 2020-08-07 | 上海华力集成电路制造有限公司 | OPC correction method combined with graph matching |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040103388A1 (en) * | 2002-11-27 | 2004-05-27 | Stanislav Aleshin | First approximation for OPC significant speed-up |
US20060026541A1 (en) * | 2004-08-02 | 2006-02-02 | Melvin Lawrence S Iii | Method and apparatus for expediting convergence in model-based OPC |
JP2006292941A (en) * | 2005-04-08 | 2006-10-26 | Sony Corp | Optical proximity effect correction method and apparatus therefor |
US20070074146A1 (en) * | 2005-09-26 | 2007-03-29 | Renesas Technology Corp. | Method for designing mask pattern and method for manufacturing semiconductor device |
US20080295060A1 (en) * | 2005-10-28 | 2008-11-27 | Freescale Semiconductor, Inc. | Method for Forming a Semiconductor Device Using Optical Proximity Correction for the Optical Lithography |
CN102478761A (en) * | 2010-11-25 | 2012-05-30 | 无锡华润上华半导体有限公司 | Photomask manufacturing method and system |
CN103186034A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
CN103309149A (en) * | 2013-06-08 | 2013-09-18 | 上海华力微电子有限公司 | Optical proximity effect correction method |
JP2014081472A (en) * | 2012-10-16 | 2014-05-08 | Renesas Electronics Corp | Optical proximity effect correction method, processing unit, program, production method of mask, and production method of semiconductor device |
-
2014
- 2014-08-27 CN CN201410428712.3A patent/CN104166305B/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040103388A1 (en) * | 2002-11-27 | 2004-05-27 | Stanislav Aleshin | First approximation for OPC significant speed-up |
US20060026541A1 (en) * | 2004-08-02 | 2006-02-02 | Melvin Lawrence S Iii | Method and apparatus for expediting convergence in model-based OPC |
JP2006292941A (en) * | 2005-04-08 | 2006-10-26 | Sony Corp | Optical proximity effect correction method and apparatus therefor |
US20070074146A1 (en) * | 2005-09-26 | 2007-03-29 | Renesas Technology Corp. | Method for designing mask pattern and method for manufacturing semiconductor device |
US20080295060A1 (en) * | 2005-10-28 | 2008-11-27 | Freescale Semiconductor, Inc. | Method for Forming a Semiconductor Device Using Optical Proximity Correction for the Optical Lithography |
CN102478761A (en) * | 2010-11-25 | 2012-05-30 | 无锡华润上华半导体有限公司 | Photomask manufacturing method and system |
CN103186034A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
JP2014081472A (en) * | 2012-10-16 | 2014-05-08 | Renesas Electronics Corp | Optical proximity effect correction method, processing unit, program, production method of mask, and production method of semiconductor device |
CN103309149A (en) * | 2013-06-08 | 2013-09-18 | 上海华力微电子有限公司 | Optical proximity effect correction method |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109543330A (en) * | 2018-11-30 | 2019-03-29 | 上海华力微电子有限公司 | A kind of optical adjacent correction method pixel-based and system of Self Matching |
CN111505898A (en) * | 2020-04-26 | 2020-08-07 | 上海华力集成电路制造有限公司 | OPC correction method combined with graph matching |
CN111505898B (en) * | 2020-04-26 | 2023-08-11 | 上海华力集成电路制造有限公司 | OPC correction method combining pattern matching |
Also Published As
Publication number | Publication date |
---|---|
CN104166305B (en) | 2020-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8196068B2 (en) | Modeling critical-dimension (CD) scanning-electron-microscopy (CD-SEM) CD extraction | |
US7827520B2 (en) | Method for correcting optical proximity effect | |
CN105093808B (en) | Optical proximity correction method for hole layer for avoiding large length-width ratio pattern | |
US10747938B2 (en) | Method for integrated circuit manufacturing | |
CN104898367A (en) | Optical proximity correction method for improving through-hole process window | |
CN114609857A (en) | Optical proximity effect correction method and system and mask | |
US9064078B2 (en) | Methods and systems for designing and manufacturing optical lithography masks | |
CN105824187B (en) | Optical proximity correction method | |
US8458631B2 (en) | Cycle time reduction in data preparation | |
CN105093809A (en) | Optical proximity correction method for enhancing lithography process window | |
CN117348333B (en) | Mask, optical proximity correction method and device and electronic equipment | |
CN104166305A (en) | OPC method for reducing correction iterations | |
JP2004302263A (en) | Method for correcting mask pattern and photomask | |
CN106707681A (en) | Method for increasing OPC (Optical Proximity Correction) processing accuracy | |
US9811615B2 (en) | Simultaneous retargeting of layout features based on process window simulation | |
CN103744265A (en) | Optical proximity correction method for improving process window | |
CN103777460A (en) | Method for improving precision of optical proximity effect correction model | |
US20080134129A1 (en) | Design rule checking for alternating phase shift lithography | |
CN112946994B (en) | Optical proximity correction method and manufacturing method of mask | |
CN108681205B (en) | OPC verification method for grid region | |
KR101143622B1 (en) | Method for verifying optical proximity correction | |
KR101883067B1 (en) | A method of reducing shot count in direct writing by a particle or photon beam | |
CN113504701B (en) | OPC hot spot repairing method | |
CN115185165A (en) | Construction method of assistant model, optical correction method and device and terminal | |
KR100859266B1 (en) | A method for correctiong layout |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |