CN105093724B - 阵列基板以及液晶面板 - Google Patents

阵列基板以及液晶面板 Download PDF

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CN105093724B
CN105093724B CN201510585499.1A CN201510585499A CN105093724B CN 105093724 B CN105093724 B CN 105093724B CN 201510585499 A CN201510585499 A CN 201510585499A CN 105093724 B CN105093724 B CN 105093724B
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farmland
groove
recessed portion
lug boss
pixel electrode
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CN105093724A (zh
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甘启明
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明公开了一种阵列基板，其包括多个像素结构，每一像素结构包括设置于玻璃基板上的薄膜晶体管以及像素电极，所述薄膜晶体管与所述像素电极之间设置有钝化层，所述像素电极通过设置于所述钝化层中的过孔电性连接到所述薄膜晶体管，其中，所述钝化层中设置有沟槽结构，所述沟槽结构包括周期性排列的多个凹陷部以及间隔每两个相邻凹陷部的凸起部；所述钝化层中还设置有一第二沟槽，所述第二沟槽环绕于所述沟槽结构的四周，所述第二沟槽将多个凹陷部相互连通；所述像素电极呈一整面地覆设于所述凹陷部和所述凸起部上，并且，所述像素电极的边缘延伸至所述第二沟槽中。本发明还公开了包含如上所述阵列基板的液晶面板。

Description

阵列基板以及液晶面板
技术领域
本发明涉及液晶显示技术领域,尤其涉及一种阵列基板，还涉及包含该阵列基板的液晶面板。
背景技术
液晶显示器(Liquid Crystal Display，LCD)，为平面超薄的显示设备，液晶面板是液晶显示器的重要组成部分。常用的液晶面板至少包括相对设置的阵列基板(arraysubstrate)和滤光基板(color filter substrate)以及位于阵列基板和滤光基板之间的液晶层。
现有技术中，垂直取向(Vertical Alignment，VA)模式的液晶显示器使用表现出负介电各项异性的液晶来构成液晶层。在垂直取向模式的液晶显示器不施加电压的情况下，液晶分子垂直于导电玻璃排列；在垂直取向模式的液晶显示器施加电压的情况下，液晶分子趋向于垂直电场的方向排列。但是，垂直取向模式的液晶显示器，大视角下会发生严重的色偏(color washout)问题，目前只要采用多畴(multi domain)显示的像素结构设计，来改善这一问题。
参阅图1和图2，现有的一种像素结构，其包括钝化层1和设置于钝化层1上的像素电极2。具体地，所述钝化层1中设置有沟槽结构3，所述沟槽结构3包括周期性排列的多个凹陷部3a以及间隔每两个相邻凹陷部3a的凸起部3b，所述像素电极2呈一整面连续地覆设于所述凹陷部3a和所述凸起部3b上。其中，如图1所示，所述钝化层1中，以其中心为原点，设置X轴和Y轴，X轴和Y轴将所述钝化层1分为第一畴1a、第二畴1b、第三畴1c和第四畴1d。所述沟槽结构3的凸起部3a和凹陷部3b在第一畴1a、第二畴1b、第三畴1c和第四畴1d中分别具有不同的倾斜角度。相应的，覆设于所述凹陷部3a和所述凸起部3b上的像素电极2，在第一畴1a、第二畴1b、第三畴1c和第四畴1d中也分别形成具有不同的倾斜角度的条状电极，由此可以改善大视角下发生的色偏问题。
但是，在如上的像素结构中，在像素电极2的边缘部分，参阅图3和图4，由于像素电极2具有与凹陷部3a和凸起部3b相似的形状，不管是沿X方向还是沿Y方向，像素电极2的边缘都是突变的台阶结构，这样会使得像素结构边缘的液晶分子倒向紊乱。在液晶面板中，均匀稳定的液晶倒向行为应该是从像素结构的中心开始，逐渐推动外围的液晶分子倾倒。如果像素结构边缘的液晶分子倒向紊乱，则倒向紊乱的带动力与从像素结构中心开始的倒向推动力相遇，容易在像素结构中促使液晶分子紊乱，产生不规则的暗纹区，降低了液晶面板的光线透过率。
发明内容
鉴于现有技术存在的不足，本发明首先提供了一种阵列基板，通过对阵列基板中的像素结构进行改进，以使像素结构中可以得到更加均匀稳定的液晶分子倒向，提高了液晶面板的光线透过率。
为了实现上述目的，本发明采用了如下的技术方案：
一种阵列基板，包括多个像素结构，每一像素结构包括设置于玻璃基板上的薄膜晶体管以及像素电极，所述薄膜晶体管与所述像素电极之间设置有钝化层，所述像素电极通过设置于所述钝化层中的过孔电性连接到所述薄膜晶体管，其中，所述钝化层中设置有沟槽结构，所述沟槽结构包括周期性排列的多个凹陷部以及间隔每两个相邻凹陷部的凸起部；所述钝化层中还设置有一第二沟槽，所述第二沟槽环绕于所述沟槽结构的四周，所述第二沟槽将多个凹陷部相互连通；所述像素电极呈一整面地覆设于所述凹陷部和所述凸起部上，并且，所述像素电极的边缘延伸至所述第二沟槽中。
其中，所述过孔设置于所述沟槽结构的中心。
其中，以所述过孔为原点，设置X轴和Y轴，将所述沟槽结构所在区域分为第一畴、第二畴、第三畴和第四畴，所述凸起部和所述凹陷部在第一畴、第二畴、第三畴和第四畴内均相对于X轴倾斜；其中，第一畴和第二畴的凸起部和凹陷部与第三畴和第四畴内的凸起部和凹陷部关于X轴对称，第一畴和第四畴内的凸起部和凹陷部与第二畴和第三畴内的凸起部和凹陷部关于Y轴对称。
其中，所述第一畴中的凸起部和凹陷部相对于X轴呈45°倾斜，所述第二畴中的凸起部和凹陷部相对于X轴呈135°倾斜，所述第三畴中的凸起部和凹陷部相对于X轴呈-135°倾斜，所述第四畴中的凸起部和凹陷部相对于X轴呈-45°倾斜。
其中，所述凸起部和所述凹陷部的宽度相等。
其中，所述凹陷部的深度小于钝化层的厚度。
其中，所述第二沟槽与所述凹陷部的深度相等，所述第二沟槽的宽度大于所述凹陷部的宽度。
其中，所述像素电极的材料为ITO。
其中，所述钝化层的材料为SiNx或SiOx。
本发明还提供了一种液晶面板，包括相对设置的阵列基板和滤光基板以及位于所述阵列基板和滤光基板之间的液晶层，其中，所述阵列基板采用了如上所述的阵列基板。
相比于现有技术，本发明实施例提供的阵列基板以及液晶面板，通过对阵列基板中的像素结构进行改进，在钝化层中的沟槽结构四周还设置有第二沟槽，像素电极呈一整面连续地覆设于沟槽结构上，并且像素电极的边缘延伸至第二沟槽中，像素电极的边缘不管是沿X方向还是沿Y方向，均连续平滑地延伸一定的长度。因此，像素结构边缘的液晶分子不会发生倒向紊乱，使得像素结构中可以得到更加均匀稳定的液晶分子倒向，提高了液晶面板的光线透过率。
附图说明
图1是现有的一种像素结构中钝化层的俯视图。
图2是如图1中A部分的剖面图，图中还示出了位于钝化层上的像素电极。
图3是如图1中B部分的剖面图，图中还示出了位于钝化层上的像素电极。
图4是如图1中C部分的剖面图，图中还示出了位于钝化层上的像素电极。
图5是本发明实施例提供的阵列基板的结构示意图。
图6是本发明实施例的像素结构中钝化层的俯视图。
图7是如图6中D部分的剖面图，图中还示出了位于钝化层上的像素电极。
图8是本发明实施例提供的液晶面板的结构示意图。
图9是本发明实施例提供的液晶面板的光线透过率曲线图。
具体实施方式
下面将结合附图以及具体实施例，对本发明实施例中的技术方案进行详细地描述，显然，所描述的实施例仅仅是本发明一部分实例，而不是全部实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护范围。
参阅图5，本实施例提供的一种阵列基板，该阵列基板100包括玻璃基板10以及形成在所述玻璃基板10上的多个像素结构20(附图中仅示例性示出了其中的一个像素结构20的局部剖面图)。每一像素结构20包括设置于玻璃基板10上的薄膜晶体管30以及像素电极40，所述薄膜晶体管30与所述像素电极40之间设置有钝化层50。具体地，如图5所示的，所述薄膜晶体管30包括栅极31、栅极绝缘层32、有源层33、源极34以及漏极35，所述像素电极40通过设置于所述钝化层50中的过孔60电性连接到所述薄膜晶体管30的漏极35(在另外的一些实施例中也可以是连接到源极34)。其中，所述像素电极40的材料可以选择为ITO，所述钝化层50的可以选择材料为SiNx或SiOx。
其中，参阅图6和图7，所述钝化层50中设置有沟槽结构51，所述沟槽结构51包括周期性排列的多个凹陷部511以及间隔每两个相邻凹陷部511的凸起部512。所述钝化层50中还设置有一第二沟槽52，所述第二沟槽52环绕于所述沟槽结构51的四周，所述第二沟槽52将多个凹陷部511相互连通。所述像素电极40呈一整面地覆设于所述凹陷部511和所述凸起部512上，并且，所述像素电极40的边缘延伸至所述第二沟槽52中。
其中，如图6所示，所述过孔60设置于所述沟槽结构51的中心。以所述过孔60为原点，设置X轴和Y轴，X轴和Y轴将所述沟槽结构51所在区域分为第一畴51a、第二畴51b、第三畴51c和第四畴51d。所述沟槽结构51中凸起部512和凹陷部511在第一畴51a、第二畴51b、第三畴51c和第四畴51d内均相对于X轴倾斜；并且，第一畴51a和第二畴51b的凸起部512和凹陷部511与第三畴51c和第四畴51d内的凸起部512和凹陷部511关于X轴对称，第一畴51a和第四畴51d内的凸起部512和凹陷部511与第二畴51b和第三畴51c内的凸起部512和凹陷部511关于Y轴对称。具体到本实施例中，所述第一畴51a中的凸起部512和凹陷部511相对于X轴呈45°倾斜，所述第二畴51b中的凸起部512和凹陷部511相对于X轴呈135°倾斜，所述第三畴51c中的凸起部512和凹陷部511相对于X轴呈-135°倾斜，所述第四畴51d中的凸起部512和凹陷部511相对于X轴呈-45°倾斜。
如上提供的像素结构中，覆设于所述凹陷部511和所述凸起部512上的像素电极40，在第一畴51a、第二畴51b、第三畴51c和第四畴51d中分别形成具有不同的倾斜角度的条状电极，由此可以改善大视角下发生的色偏问题。进一步地，像素电极40的边缘延伸至第二沟槽52中，像素电极40的边缘不管是沿X方向还是沿Y方向，均连续平滑地延伸一定的长度。因此，像素结构边缘的液晶分子不会发生倒向紊乱，使得像素结构中可以得到更加均匀稳定的液晶分子倒向，提高了液晶面板的光线透过率。所述钝化层50需经黄光制程进行图案化处理以得到沟槽结构51和第二沟槽52，所述像素电极40连续不间断的覆盖于所述沟槽结构51和第二沟槽52上，其无需黄光制程，而是直接沉积于钝化层50的沟槽结构51和第二沟槽52上。
进一步地，如图7所示的，所述沟槽结构51中，所述凹陷部511的深度h1小于钝化层50的厚度h2，所述凹陷部511的深度值h1不固定，可根据所述钝化层50的厚度h2和设计需求进行优化调整。所述凹陷部511的宽度值d1和相邻的凸起部512的宽度值d2不固定，可根据设计需要进行变更调整，在本实施例中优选设计为d1＝d2。进一步地，第二沟槽52的深度h3也小于钝化层50的厚度h2，第二沟槽52的深度h3可大于或小于或等于凹陷部511的深度h1，可根据设计需要进行变更调整，在本实施例中优选设计为h3＝h1。所述第二沟槽52的宽度d3优选设计为大于所述凹陷部511的宽度，以使像素电极40的边缘具有较大的连续平滑延伸的长度，宽度d3的具体数值也不做具体限定，可根据设计需要进行变更调整。基于以上，本发明的像素结构无需高精细的沟槽结构51和第二沟槽52。
本实施例中还提供了一种液晶面板，如图8所示，该液晶面板包括如上所述的阵列基板100和与该阵列基板100相对设置的滤光基板200，还包括位于所述阵列基板100和滤光基板200之间的液晶层300。
图9是液晶面板的光线透过率曲线图。其中，曲线x-x是采用了本实施例提供的阵列基板的液晶面板，曲线y-y是采用了现有的阵列基板的液晶面板。从图中可以看出，本发明实施例提供的阵列基板，对像素结构进行改善之后，提高了液晶面板的光线透过率。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (8)

1.一种阵列基板，包括多个像素结构(20)，每一像素结构(20)包括设置于玻璃基板(10)上的薄膜晶体管(30)以及像素电极(40)，所述薄膜晶体管(30)与所述像素电极(40)之间设置有钝化层(50)，所述像素电极(40)通过设置于所述钝化层(50)中的过孔(60)电性连接到所述薄膜晶体管(30)，其特征在于，所述钝化层(50)中设置有沟槽结构(51)，所述沟槽结构(51)包括周期性排列的多个凹陷部(511)以及间隔每两个相邻凹陷部(511)的凸起部(512)；所述钝化层(50)中还设置有一第二沟槽(52)，所述第二沟槽(52)环绕于所述沟槽结构(51)的四周，所述第二沟槽(52)将多个凹陷部(511)相互连通；所述像素电极(40)呈一整面连续地覆设于所述凹陷部(511)和所述凸起部(512)上，并且，所述像素电极(40)的边缘延伸至所述第二沟槽(52)中；
其中，所述凹陷部(511)的深度小于所述钝化层(50)的厚度，所述第二沟槽(52)与所述凹陷部(511)的深度相等，所述第二沟槽(52)的宽度大于所述凹陷部(511)的宽度。
2.根据权利要求1所述的阵列基板，其特征在于，所述过孔(60)设置于所述沟槽结构(51)的中心。
3.根据权利要求2所述的阵列基板，其特征在于，以所述过孔(60)为原点，设置X轴和Y轴，将所述沟槽结构(51)所在区域分为第一畴(51a)、第二畴(51b)、第三畴(51c)和第四畴(51d)，所述凸起部(512)和所述凹陷部(511)在第一畴(51a)、第二畴(51b)、第三畴(51c)和第四畴(51d)内均相对于X轴倾斜；其中，第一畴(51a)和第二畴(51b)的凸起部(512)和凹陷部(511)与第三畴(51c)和第四畴(51d)内的凸起部(512)和凹陷部(511)关于X轴对称，第一畴(51a)和第四畴(51d)内的凸起部(512)和凹陷部(511)与第二畴(51b)和第三畴(51c)内的凸起部(512)和凹陷部(511)关于Y轴对称。
4.根据权利要求3所述的阵列基板，其特征在于，所述第一畴(51a)中的凸起部(512)和凹陷部(511)相对于X轴呈45°倾斜，所述第二畴(51b)中的凸起部(512)和凹陷部(511)相对于X轴呈135°倾斜，所述第三畴(51c)中的凸起部(512)和凹陷部(511)相对于X轴呈-135°倾斜，所述第四畴(51d)中的凸起部(512)和凹陷部(511)相对于X轴呈-45°倾斜。
5.根据权利要求1所述的阵列基板，其特征在于，所述凸起部(512)和所述凹陷部(511)的宽度相等。
6.根据权利要求1所述的阵列基板，其特征在于，所述像素电极(40)的材料为ITO。
7.根据权利要求1所述的阵列基板，其特征在于，所述钝化层(50)的材料为SiNx或SiOx。
8.一种液晶面板，包括相对设置的阵列基板(100)和滤光基板(200)以及位于所述阵列基板(100)和滤光基板(200)之间的液晶层(300)，其特征在于，所述阵列基板(100)为权利要求1-7任一所述的阵列基板。
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