CN105092138A - Thick film pressure sensor and manufacturing method thereof - Google Patents
Thick film pressure sensor and manufacturing method thereof Download PDFInfo
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- CN105092138A CN105092138A CN201410197042.9A CN201410197042A CN105092138A CN 105092138 A CN105092138 A CN 105092138A CN 201410197042 A CN201410197042 A CN 201410197042A CN 105092138 A CN105092138 A CN 105092138A
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Abstract
The invention discloses a thick film pressure sensor and a manufacturing method thereof. The thick film pressure sensor comprises a metal basal body, a dielectric layer, a thick film strain resistor, a conduction band, a pad and an insulation protecting layer. The thick film pressure sensor is characterized in that the metal basal body is an elastic body of the thick film strain sensor; the dielectric layer is arranged on the metal elastic body; the thick film strain resistor, the conduction band and the pad are arranged on the dielectric layer; the thick film strain resistor is connected with the pad through the conduction band to form a Wheatstone bridge; and the insulation protecting layer is arranged on the thick film strain resistor, the conduction band and the pad in a printing and firing way. By directly arranging the dielectric layer and the thick film strain resistor on the metal elastic body in a printing and firing way, the thick film pressure sensor achieves stable performance. The thick film pressure sensor has the advantages of low temperature coefficient and wide working temperature and measuring range. Meanwhile, the thick film techniques are mature. The metal basal body has a low cost.
Description
Technical field
The present invention relates to a kind of measuring sensor, particularly a kind of structure of thick film pressure transducer and manufacture method thereof.
Background technology
Tradition is all adopt stupalith (Al2O3 based on the elastic body of the strain pressure transducer of thick film, 96%) stupalith has good insulativity, physical strength and heat-resisting quantity, adapt to the General Requirements of strain transducer, but the pressure transducer of ceramic matrix has following deficiency at least:
1) stupalith is nonmetallic materials, and due to the restriction of Machining of Ceramics technique, can only adopt assembly structure based on the elastomeric pressure transducer of pottery when secondary encapsulation, easily produce erection stress, the precision performance of sensor can not be guaranteed;
2) because pottery is hard brittle material, poor toughness, thus ceramic elastomeric pressure transducer can only be applied to the measurement of lower pressure, and its anti-overload ability is lower, and exceed the applied environment being loaded with instantaneous pressure impact at high range under, ceramic elastic body does not obviously meet the demands.
3) due to the material behavior of ceramic elastic body own, sensor is caused can not to adopt welding technology in air-tight packaging.Ceramic sensor element common on market all adopts seal with O ring, such as the ceramic sensor element of U.S. Senseta company.But seal with O ring deposits problem both ways, one is that some corrosive pressure transmission medium has corrosive attack to O shape circle, causes sensor failure, even if medium does not have corrosive attack to O shape circle, O shape circle also can passing in time occur aging; In addition, O shape circle is easily damaged, work long hours and can produce distortion, and resistance to elevated temperatures is poor, the inefficacy that finally all can cause sensor that these are not enough.
In sum, for the occasion that General Requirements is lower, pressure transducer based on ceramic matrix can be suitable for, and for the field of application conditions harshness, as Aero-Space, the fields such as large-scale engineering machinery, it does not obviously meet the demands, thus thick film strain sensor application field is restricted.And the thick film sensor of metallic matrix, due to the characteristic of metal itself, the request for utilization under making it meet harsh conditions.
Summary of the invention
The object of the invention is the defect for existing in prior art, a kind of structure and manufacture method of thick film pressure transducer are provided.The present invention includes: metallic matrix, dielectric layer, thick-film strain resistor, conduction band, pad, insulating protective layer; it is characterized in that described metallic matrix is the elastic body of thick film strain sensor; metal elastic gonosome arranges dielectric layer; dielectric layer is arranged thick-film strain resistor, conduction band, pad; described thick-film strain resistor connects into Wheatstone bridge (Wheatstonebridge) by conduction band and pad, and described thick-film strain resistor, conduction band and pad are provided with insulating protective layer.
The manufacture method of thick film pressure transducer of the present invention, described metal elastic gonosome is manufactured with dielectric layer by serigraphy and thick-film technique, dielectric layer adopts serigraphy and thick film firing technique to be produced on metal elastic gonosome, thick-film strain resistor, conduction band, pad adopt serigraphy and thick film firing technique to be produced on dielectric layer, and described dielectric layer manufacturing process steps is:
A) select 165-325 object silk screen printed medium slurry on stainless steel base, gross thickness is 80-90 micron;
B) printed matter at room temperature places 3-10 minute, until reticulate pattern disappears;
C) printed matter at the temperature of 145-150 DEG C dry 10 minutes;
D) at the peak temperature sintering 10-12 minute of 850 DEG C-860 DEG C;
Described thick-film strain resistor, conduction band, pad adopt serigraphy and thick film firing technique to be produced on dielectric layer, and the concrete manufacturing process steps of thick-film strain resistor is:
E) 165-325 object silk screen print thickness on dielectric layer is selected to be the resistance slurry of 22-25 micron;
F) printed matter at room temperature places 3-10 minute, until reticulate pattern disappears;
G) printed matter at the temperature of 145 DEG C-150 DEG C dry 10 minutes;
H) at the peak temperature sintering 10-12 minute of 850 DEG C-860 DEG C.
Advantage of the present invention is that dielectric layer and thick-film strain resistor are directly printed on metal elastic gonosome, and by high temperature sintering, and metal elastic gonosome is formed securely and is integrated.Therefore, thick film pressure transducer avoids conventional strain gauge transducer because of the creep caused by use bonding agent stickup strain resistor and sluggishness, and performance is more stable.Simultaneously, thick film pressure transducer operating temperature range wide (normally can work at 200 DEG C at-50 DEG C), temperature coefficient little (being generally less than 100ppm/ DEG C), can measuring pressure large (reaching as high as 280MPa), function admirable, reliability is high, and thick-film technique is ripe, metallic matrix is cheap, and this is all that Metal Substrate thick film pressure transducer large-scale application creates good condition.
Accompanying drawing explanation
The structural representation of Fig. 1 embodiment of the present invention one;
The structural representation of Fig. 2 embodiment of the present invention two;
Fig. 3 embodiment of the present invention one and the thick-film resistor in example two and wire arrangements schematic diagram
In figure: 1 metallic matrix, 2 dielectric layers, 2a ground floor dielectric layer, 2b second layer dielectric layer, 2c third layer dielectric layer, 3 are thick-film resistor wire and pad layer, 3a thick-film strain resistor, 3b thick film resistance trimming resistance, 3c pad, 4 insulating protective layers.
Embodiment
Embodiment one
Further illustrate embodiments of the invention below in conjunction with accompanying drawing: see Fig. 1 and Fig. 3, the present invention is made up of metallic matrix 1, dielectric layer 2, thick-film resistor wire and pad layer 3, thick-film strain resistor 3a, thick film resistance trimming resistance 3b, pad 3c, insulating protective layer 4.Metallic matrix 1 is the elastic body of thick film strain sensor, and metal elastic gonosome arranges dielectric layer 2, and dielectric layer 2 is arranged thick-film strain resistor 3a, pad 3c, conduction band.The material of metal elastic gonosome is ferritic stainless steel, as 430 stainless steels, also can adopt aerometal, as Haast nickel alloy (hastalloy), inconel alloy etc.This sensor is compared with thick film ceramic sensor, and except possessing its all advantages had, it also has higher reliability, more stable output characteristics, more competitive manufacturing cost, larger pressure limit and compressive resistance overload capacity.Metal elastic gonosome is manufactured with dielectric layer 2 by serigraphy and thick-film technique; on dielectric layer 2,4 symmetrical thick-film strain resistor 3a, two thick film resistance trimming resistance 3b, conduction band, pad 3c are manufactured with by serigraphy and thick-film technique; described thick-film strain resistor 3a connects into the Wheatstone bridge (Wheatstonebridge) of semi-loop by conduction band and pad, and described thick-film strain resistor 3a and conduction band print burning insulating protective layer 4.
Metal elastic gonosome 1 is manufactured with dielectric layer 2 by serigraphy and thick-film technique, dielectric layer 2 adopts serigraphy and thick film firing technique to be produced on metal elastic gonosome 1, thick-film strain resistor 3a, thick film resistance trimming resistance 3b, conduction band, pad 3c adopt serigraphy and thick film firing technique to be produced on dielectric layer 2, and the concrete technology of dielectric layer comprises following steps:
A) 165-325 object silk screen printed medium slurry on stainless steel base is selected, gross thickness 80-90 micron;
B) printed matter at room temperature places 3-10 minute, until reticulate pattern disappears;
C) printed matter at the temperature of 145 DEG C-150 DEG C dry 10 minutes;
D) at the peak temperature sintering 10-12 minute of 850 DEG C-860 DEG C.
In the present embodiment, dielectric layer 2 is printed by layering and is then sintered to metallic matrix 1, according to different dielectric pastes, has two kinds to print burning order:
(1) print the first thickness dielectric paste 2a and after oven dry, sinter at once, and then burning second layer 2b and third layer 2c by iterative process print, generally at least printing burning three layers.The print of every one deck dielectric paste is burnt thickness and is about 28-30 micron.
(2) print the first thickness dielectric paste 2a and dry after, wouldn't sinter, and then be printed on printing second layer 2b and third layer 2c on ground floor 2a by iterative process, general at least printing three layers, the print of every one deck dielectric paste is burnt thickness and is about 28-30 micron, is then sintered together by the multilayer slurry of printing.
Described thick-film strain resistor 3a, resistance trimming resistance 3b, conduction band, pad adopt serigraphy and thick film firing technique to be produced on dielectric layer 2, and the concrete technology step of thick-film strain resistor 3a and thick film resistance trimming resistance 3b is:
E) 165-325 object silk screen print thickness 22-25 micron thick-film resistor paste on dielectric layer 2 is selected;
F) printed matter at room temperature places 3-10 minute, until reticulate pattern disappears;
G) printed matter at the temperature of 145 DEG C-150 DEG C dry 10 minutes;
H) at the peak temperature sintering 10-12 minute of 850 DEG C-860 DEG C.
Embodiment two
Embodiment two is identical with embodiment one, and difference is that one of them pad of 4 pads is made into the form cut open, and cut place's spacing 1 ~ 2 millimeter open, thick film resistance trimming resistance short circuit is outside Wheatstone bridge.Dielectric paste is not layering printing or sintering, but print burns on metallic matrix once, and thickness is 80-90 micron, see Fig. 2.
Claims (5)
1. a thick film pressure transducer; comprise: metallic matrix, dielectric layer, thick-film strain resistor, conduction band, pad, insulating protective layer; it is characterized in that described metallic matrix is the elastic body of thick film strain sensor; metal elastic gonosome arranges dielectric layer; dielectric layer is arranged thick-film strain resistor, thick film resistance trimming resistance, conduction band, pad; described thick-film strain resistor connects into Wheatstone bridge by conduction band and pad, and described thick-film strain resistor, conduction band and pad are provided with insulating protective layer.
2. thick film pressure transducer according to claim 1, is characterized in that described metal elastic gonosome is ferritic stainless steel or aerometal.
3. thick film pressure transducer according to claim 1, is characterized in that described thick film resistance trimming resistance short circuit is outside Wheatstone bridge.
4. thick film pressure transducer according to claim 1, is characterized in that the wherein individual pad of described pad is made into the form cut open, cuts place's spacing 1 ~ 2 millimeter open.
5. the manufacture method of thick film pressure transducer as claimed in claim 1, it is characterized in that described metal elastic gonosome is manufactured with dielectric layer by serigraphy and thick-film technique, dielectric layer adopts serigraphy and thick film firing technique to be produced on metal elastic gonosome, thick-film strain resistor, conduction band, pad adopt serigraphy and thick film firing technique to be produced on dielectric layer, and the manufacturing process steps of described dielectric layer is:
A) select 165-325 object silk screen printed medium slurry on stainless steel base, gross thickness is about 80-90 micron;
B) printed matter at room temperature places 3-10 minute, until reticulate pattern disappears;
C) printed matter at the temperature of 145 DEG C-150 DEG C dry 10 minutes;
D) at the peak temperature sintering 10-12 minute of 850 DEG C-860 DEG C;
Described thick-film strain resistor, conduction band, pad adopt serigraphy and thick film firing technique to be produced on dielectric layer, and the concrete manufacturing process steps of thick-film strain resistor is:
E) 165-325 object silk screen print thickness on dielectric layer is selected to be the resistance slurry of 22-25 micron;
F) printed matter at room temperature places 3-10 minute, until reticulate pattern disappears;
G) printed matter at the temperature of 145 DEG C-150 DEG C dry 10 minutes;
H) at the peak temperature sintering 10-12 minute of 850 DEG C-860 DEG C.
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| CN201410197042.9A CN105092138A (en) | 2014-05-12 | 2014-05-12 | Thick film pressure sensor and manufacturing method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106248268A (en) * | 2016-08-31 | 2016-12-21 | 西安中星测控有限公司 | A kind of strain gauge transducer and preparation method thereof |
| CN106322113A (en) * | 2016-08-24 | 2017-01-11 | 浙江沁园水处理科技有限公司 | High-pressure switch and water purifier using high-pressure switch |
| CN106768524A (en) * | 2017-02-20 | 2017-05-31 | 广东海洋大学 | A kind of diaphragm pressure sensor and its manufacture method |
| CN107870054A (en) * | 2016-09-22 | 2018-04-03 | 罗伯特·博世有限公司 | Sense the pressure sensor and its manufacture method of fluid medium pressure |
| CN108901091A (en) * | 2018-08-22 | 2018-11-27 | 湖南海曙科技有限公司 | A kind of stainless steel base thick film heating part making method |
| CN109987577A (en) * | 2019-03-18 | 2019-07-09 | 西安中星测控有限公司 | A kind of ceramic insulating layer of pressure sensor and preparation method thereof |
| CN116929610A (en) * | 2023-07-24 | 2023-10-24 | 中航光电华亿(沈阳)电子科技有限公司 | High-temperature micro-melting pressure sensor core and preparation method thereof |
| CN117073873A (en) * | 2023-08-23 | 2023-11-17 | 无锡胜脉电子有限公司 | Force sensor for electromechanical braking system and preparation method |
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| CN1215157A (en) * | 1998-10-31 | 1999-04-28 | 中国科学院合肥智能机械研究所 | Thick film micropressure sensor and making method thereof |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106322113A (en) * | 2016-08-24 | 2017-01-11 | 浙江沁园水处理科技有限公司 | High-pressure switch and water purifier using high-pressure switch |
| CN106248268A (en) * | 2016-08-31 | 2016-12-21 | 西安中星测控有限公司 | A kind of strain gauge transducer and preparation method thereof |
| CN107870054A (en) * | 2016-09-22 | 2018-04-03 | 罗伯特·博世有限公司 | Sense the pressure sensor and its manufacture method of fluid medium pressure |
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| CN106768524A (en) * | 2017-02-20 | 2017-05-31 | 广东海洋大学 | A kind of diaphragm pressure sensor and its manufacture method |
| CN108901091A (en) * | 2018-08-22 | 2018-11-27 | 湖南海曙科技有限公司 | A kind of stainless steel base thick film heating part making method |
| CN108901091B (en) * | 2018-08-22 | 2021-05-25 | 湖南特发新材料有限公司 | Preparation method of stainless steel substrate thick film heating element |
| CN109987577A (en) * | 2019-03-18 | 2019-07-09 | 西安中星测控有限公司 | A kind of ceramic insulating layer of pressure sensor and preparation method thereof |
| CN116929610A (en) * | 2023-07-24 | 2023-10-24 | 中航光电华亿(沈阳)电子科技有限公司 | High-temperature micro-melting pressure sensor core and preparation method thereof |
| CN116929610B (en) * | 2023-07-24 | 2024-07-23 | 中航光电华亿(沈阳)电子科技有限公司 | High-temperature micro-melting pressure sensor core and preparation method thereof |
| CN117073873A (en) * | 2023-08-23 | 2023-11-17 | 无锡胜脉电子有限公司 | Force sensor for electromechanical braking system and preparation method |
| CN117073873B (en) * | 2023-08-23 | 2024-04-30 | 无锡胜脉电子有限公司 | Force sensor for electromechanical braking system and preparation method |
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Application publication date: 20151125 |