CN208921325U - A kind of Magnetron Sputtering Thin Film pressure sensor core - Google Patents
A kind of Magnetron Sputtering Thin Film pressure sensor core Download PDFInfo
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- CN208921325U CN208921325U CN201821830198.6U CN201821830198U CN208921325U CN 208921325 U CN208921325 U CN 208921325U CN 201821830198 U CN201821830198 U CN 201821830198U CN 208921325 U CN208921325 U CN 208921325U
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- alloy
- elastomer
- pressure sensor
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- thin film
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Abstract
The utility model discloses a kind of Magnetron Sputtering Thin Film pressure sensor cores; elastomer is strained including cupuliform alloy; metallic circuit support ring is connected on the alloy strain elastomer, described successively sputtering has aluminum oxide insulating layer, sputtered film resistive layer, sputtering aluminum oxide protective film layer and Pt trace layer from inside to outside in cupuliform alloy strain elastomeric apex outer surface.Alloy strains elastomer and uses GH3044 nickel-base high-temperature high elastic modulus alloy, so that the performance realized under high temperature, high pressure and adverse circumstances is stablized, improves sensor accuracy；Use sputtered film resistance layer material for PdCr13, keep sputtering resistance film adhesive force stronger, sensing element is realized with the atom of elastomer ining conjunction with, solve the problems, such as tradition strain transducer because bonding agent is generated by high temperature forced-slip between sensing element and elastomer temperature drift, null offset so as to cause it is unstable, insecure.
Description
Technical field
The utility model belongs to sensor technical field, and in particular to a kind of Magnetron Sputtering Thin Film pressure sensor core.
Background technique
Pressure sensor is a kind of sensor the most commonly used in industrial stresses test, is widely used in various Industrial Measurement pressures
Environment is related to numerous industries such as Aeronautics and Astronautics, petrochemical industry, electric power, ship.Pressure sensor is to experience pressure signal, and can press
Pressure signal is converted into the device or device of the electric signal of available output according to certain rule.Pressure sensor is usually by pressing
Force sensitive element and signal processing unit composition.By different test pressure types, pressure sensor can be divided into gauge pressure transducer,
Differential pressure pick-up and absolute pressure sensor.
The principle of magnetron sputtering technology is that low density gas is made in the plasma that abnormal glow discharge generates in electric field
Cathode targets surface is bombarded with lower, the molecule of target material surface, atom, ion and electronics etc. are sputtered out, are sputtered
Ion out has certain kinetic energy, along certain direction directive matrix surface, forms coating in matrix surface.
Strain gauge transducer is based on a kind of sensor strained caused by measurement object receiving force deformation.Resistance strain gage
It is then its commonly used sensing element, it is the sensing that a kind of variation that can will be strained on mechanical component is converted to resistance variations
Element, traditional strain transducer is because of the temperature drift that high temperature forced-slip generates between sensing element and elastomer, null offset
So as to cause unstable problem.
Utility model content
The utility model solves the deficiencies in the prior art, and providing a kind of includes cupuliform alloy strain elastomer, three oxidations
Two aluminum insulation layers and sputtered film resistive layer, sputtering resistance film adhesive force are stronger.Realize the original of sensing element and elastomer
Son combines, and solves traditional strain transducer because of bonding agent is generated by high temperature forced-slip between sensing element and elastomer temperature
Degree drift, null offset so as to cause unstable, insecure problem.
The technical scheme adopted by the utility model is a kind of Magnetron Sputtering Thin Film pressure sensor core, including cupuliform
Alloy strains elastomer, is connected with metallic circuit support ring on the alloy strain elastomer, the cupuliform alloy strains bullet
Property body outer surface of cupular part on from inside to outside successively sputtering have aluminum oxide insulating layer, sputtered film resistive layer, sputtering three oxidation
Two aluminium protective film layers and Pt trace layer, Pt trace layer end make Pt lead point, the metallic circuit support ring
Thick film compensation circuit plate is equipped with far from connection alloy strain elastomer other end outside.
Preferably, metallic circuit support ring cross section is that both ends band step circles are ring-like.
It is furthermore preferred that the alloy strain elastomer is made of GH3044 nickel-base high-temperature high elastic modulus alloy material.
Even more preferably, the aluminum oxide insulating layer with a thickness of 3-6um.
Even more preferably, the sputtered film resistive layer is made of PdCr13 material, and sputtered film electricity
Resistance layer with a thickness of 0.2-0.5um.
Even more preferably, it is described sputtering aluminum oxide protective film layer with a thickness of 1.5-3um.
Even more preferably, the Pt lead point with a thickness of 1.5-3um.
Compared to the prior art, the utility model has the advantages that a kind of Magnetron Sputtering Thin Film pressure sensor core
Body, including cupuliform alloy strain elastomer, are connected with metallic circuit support ring on the alloy strain elastomer, described in cup
Successively sputtering has aluminum oxide insulating layer, sputtered film resistance from inside to outside on shape alloy elastic response body outer surface of cupular part
Layer, sputtering aluminum oxide protective film layer and Pt trace layer, alloy strain elastomer and use GH3044 nickel-base high-temperature high resiliency
Alloy is stablized to realize performance of the sensor under high temperature, high pressure and adverse circumstances, improves sensor accuracy；Using
Sputtered film resistance layer material is PdCr13, keeps sputtering resistance film adhesive force stronger, realizes the original of sensing element and elastomer
Son combines, and the traditional strain transducer of solution is because of the temperature that bonding agent is generated by high temperature forced-slip between sensing element and elastomer
Drift, null offset so as to cause unstable, insecure problem；Insulating layer is sputtered using aluminum oxide, compared to tradition
Insulating layer material silicon dioxide film, production technology performance stablize, convenient for large-scale production.
Detailed description of the invention
Fig. 1 is the utility model structure diagram.
Specific embodiment
The utility model is described in detail with reference to the accompanying drawings and detailed description.
A kind of Magnetron Sputtering Thin Film pressure sensor core, refering to fig. 1, including cupuliform alloy strains elastomer 1, the conjunction
Be connected with metallic circuit support ring 2 on gold strain elastomer 1, on cupuliform alloy strain 1 outer surface of cupular part of elastomer by
From inside to outside successively sputtering have aluminum oxide insulating layer 3, sputtered film resistive layer 4, sputtering aluminum oxide protective film layer 5 and
Pt trace layer 6,6 end of Pt trace layer are equipped with Pt lead point, and the metallic circuit support ring 2 is far from connection alloy
It strains and is equipped with thick film compensation circuit plate 7 on the outside of the elastomer other end, because sputtering resistance film adhesive force is stronger, realize sensing element
In conjunction with the atom of elastomer, solve traditional strain transducer because between sensing element and elastomer bonding agent because high temperature stress is sliding
Unstable, insecure problem caused by the raw temperature drift of movable property, null offset, using aluminum oxide insulating layer 3, phase
Than traditional insulating layer material silicon dioxide film, production technology performance is stablized, convenient for large-scale production.
With continued reference to Fig. 1,2 cross section of metallic circuit support ring is that both ends band step circles are ring-like.
With continued reference to Fig. 1, the alloy strain elastomer 1 is made of GH3044 nickel-base high-temperature high elastic modulus alloy material,
Stablize to realize the performance under high temperature, high pressure and adverse circumstances, improves sensor accuracy.
With continued reference to Fig. 1, the aluminum oxide insulating layer 3 with a thickness of 3-6um.
With continued reference to Fig. 1, the sputtered film resistive layer 4 is made of PdCr13 material, and the sputtered film resistance
Layer 4 with a thickness of 0.2-0.5um.
With continued reference to Fig. 1, it is described sputtering aluminum oxide protective film layer 5 with a thickness of 1.5-3um.
With continued reference to Fig. 1, the Pt lead point with a thickness of 1.5-3um.
When prepared by the utility model Magnetron Sputtering Thin Film pressure sensor core, using nickel-base high-temperature high elastic modulus alloy
GH3044 processes alloy and strains elastomer 1, and the coefficient of thermal expansion (within the scope of 100 DEG C -800 DEG C) of the material is (11-15) x10-6/
DEG C, the material against oxidative ability is strong, and alloy strain elastomer 1 is finish-machined to after design requirement and grinds and polishes through Seiko；It closes
Gold strain 1 upper surface of elastomer is aluminum oxide insulating layer 3, and the coefficient of thermal expansion of insulating film is 11x10-6/ DEG C and elastic membrane
Coefficient of thermal expansion is close, therefore can omit heat expansion buffer layer, and aluminum oxide insulating layer 3 is prepared using radio-frequency sputtering, and thickness 3-6 is micro-
Rice；The PdCr13 sputtered film resistive layer 4 for depositing 0.2-0.5 microns with sputtering method again, etches four resistance through photoetching process
Item, then 1.5-3 microns of thick Pt lead points are sputtered with mask method, sputtering is had to the Magnetron Sputtering Thin Film pressure sensing of plural layers
Device core carries out 900 DEG C in vacuum environment and is heat-treated three hours, finally carries out sensor assembly.
Above-described embodiment, the only preferred embodiment of the utility model not are used to limit the implementation model of the utility model
It encloses, therefore all equivalent variationss done with content described in the utility model claims, the utility model right should all be included in and wanted
Within the scope of asking.
Claims (7)
1. a kind of Magnetron Sputtering Thin Film pressure sensor core, which is characterized in that strain elastomer (1) including cupuliform alloy, institute
It states and is connected with metallic circuit support ring (2) in alloy strain elastomer (1), at the top of cupuliform alloy strain elastomer (1)
Successively sputtering has aluminum oxide insulating layer (3), sputtered film resistive layer (4), sputtering aluminum oxide from inside to outside for outer surface
Protective film layer (5) and Pt trace layer (6), Pt trace layer (6) end are equipped with Pt lead point, the metallic circuit branch
Pushing out ring (2) is equipped with thick film compensation circuit plate (7) far from connection alloy strain elastomer (1) other end outside.
2. a kind of Magnetron Sputtering Thin Film pressure sensor core as described in claim 1, which is characterized in that the metallic circuit
Plate support ring (2) cross section is that both ends band step circles are ring-like.
3. a kind of Magnetron Sputtering Thin Film pressure sensor core as claimed in claim 2, which is characterized in that the alloy strain
Elastomer (1) is made of GH3044 nickel-base high-temperature high elastic modulus alloy material.
4. a kind of Magnetron Sputtering Thin Film pressure sensor core as claimed in claim 3, which is characterized in that three oxidation two
Aluminum insulation layer (3) with a thickness of 3-6um.
5. a kind of Magnetron Sputtering Thin Film pressure sensor core as claimed in claim 4, which is characterized in that the sputtered film
Resistive layer (4) is made of PdCr13 material, and the sputtered film resistive layer (4) with a thickness of 0.2-0.5um.
6. a kind of Magnetron Sputtering Thin Film pressure sensor core as claimed in claim 5, which is characterized in that three oxygen of the sputtering
Change two aluminium protective film layers (5) with a thickness of 1.5-3um.
7. a kind of Magnetron Sputtering Thin Film pressure sensor core as claimed in claim 6, which is characterized in that the Pt lead point
With a thickness of 1.5-3um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821830198.6U CN208921325U (en) | 2018-11-07 | 2018-11-07 | A kind of Magnetron Sputtering Thin Film pressure sensor core |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821830198.6U CN208921325U (en) | 2018-11-07 | 2018-11-07 | A kind of Magnetron Sputtering Thin Film pressure sensor core |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208921325U true CN208921325U (en) | 2019-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821830198.6U Expired - Fee Related CN208921325U (en) | 2018-11-07 | 2018-11-07 | A kind of Magnetron Sputtering Thin Film pressure sensor core |
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| CN (1) | CN208921325U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111157165A (en) * | 2019-12-29 | 2020-05-15 | 西安中星测控有限公司 | MCS pressure sensor and preparation method thereof |
-
2018
- 2018-11-07 CN CN201821830198.6U patent/CN208921325U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111157165A (en) * | 2019-12-29 | 2020-05-15 | 西安中星测控有限公司 | MCS pressure sensor and preparation method thereof |
| CN111157165B (en) * | 2019-12-29 | 2022-03-18 | 西安中星测控有限公司 | MCS pressure sensor and preparation method thereof |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190531 Termination date: 20201107 |
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| CF01 | Termination of patent right due to non-payment of annual fee |