CN105088336B - A kind of polysilicon preparing device and method - Google Patents
A kind of polysilicon preparing device and method Download PDFInfo
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- CN105088336B CN105088336B CN201510444194.9A CN201510444194A CN105088336B CN 105088336 B CN105088336 B CN 105088336B CN 201510444194 A CN201510444194 A CN 201510444194A CN 105088336 B CN105088336 B CN 105088336B
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Abstract
The invention discloses a kind of polysilicon preparing devices to include：One support platform, the support platform surface is provided with reflecting layer, the reflecting layer has multiple speculums and diffusing reflection layer, the diffusing reflection layer is arranged between the speculum and the speculum, glass substrate is provided on the reflecting layer, buffer layer is provided on the glass substrate, amorphous silicon layer is provided on the buffer layer；When carrying out laser annealing, penetrate when the laser of the amorphous silicon layer is radiated at the diffusing reflection layer region and diffusing reflection occurs；When being radiated at the reflector area, the laser of reflection can be converged on the amorphous silicon layer, so that the non-crystalline silicon in the region can be absorbed into energy, energy gradient is formed with other regions.The direction of growth when present invention can control crystallization direction and control polysilicon formation improves the size of crystal grain, improves the electron mobility of polysilicon.
Description
【Technical field】
The present invention relates to display technology field, more particularly to a kind of polysilicon preparing device and method.
【Background technology】
With the development of FPD, high-resolution, the panel demand of low energy consumption are constantly suggested, non-crystalline silicon electron transfer
Rate is low, and low temperature polycrystalline silicon possesses high electron mobility and can make C-MOS circuits because that can make at low temperature, therefore quilt
It is widely studied reaching the demand of panel high-resolution, low energy consumption.
Making the method for low temperature polycrystalline silicon at present includes：Solid-phase crystallization (SPC), crystallization inducing metal (MIC) and quasi-molecule
The radium-shine annealing of radium-shine annealing (ELA), wherein quasi-molecule is current the most widely used method.
As shown in Figure 1；The polysilicon preparing device includes：One support platform 1 is set on 1 surface of support platform
There is glass substrate 2, buffer layer 3 is provided on the glass substrate 2, amorphous silicon layer 4 is provided on the buffer layer 3.ELA
The method for making low temperature polycrystalline silicon is that a buffer layer is grown on glass, then grows non-crystalline silicon, then high temperature dehydrogenation, is recycled
The radium-shine scanning non-crystalline silicon of ELA, non-crystalline silicon are subject to high temperature melting to recrystallize to form polysilicon.
The size of low-temperature polysilicon silicon crystal grain has a major impact the electric property of polysilicon, in ELA processing procedures, non-crystalline silicon by
Become approximate (nearly completely melts) state of melting completely after to high temperature, then recrystallization forms polysilicon.Weight
It can be crystallized during crystallization according to low energy to high-energy direction, low temperature is crystallized to high temperature direction；So the starting point and direction of crystallization are
In disorder, as shown in Figure 2；Crystal grain is less than normal after causing crystallization, and intercrystalline crystal boundary is on the high side, therefore affects the electron transfer of polysilicon
Rate.
Therefore, it is necessary to a kind of new technical solution is proposed, to solve above-mentioned technical problem.
【The content of the invention】
It is an object of the invention to provide a kind of polysilicon preparing device and methods, can control crystallization direction and control
Direction of growth during polysilicon formation processed improves the size of crystal grain, improves the electron mobility of polysilicon.
To solve the above problems, technical scheme is as follows：
A kind of polysilicon preparing device, the polysilicon preparing device include：One support platform, in the support platform table
Face is provided with reflecting layer, and the reflecting layer has multiple speculums and diffusing reflection layer, and the diffusing reflection layer is arranged at the reflection
Between mirror and the speculum, glass substrate is provided on the reflecting layer, buffer layer is provided on the glass substrate,
Amorphous silicon layer is provided on the buffer layer；When carrying out laser annealing, penetrate the amorphous silicon layer laser be radiated at it is described
Diffusing reflection occurs during diffusing reflection layer region；When being radiated at the reflector area, the laser of reflection can converge in the non-crystalline silicon
On layer, so that the non-crystalline silicon in the region can be absorbed into energy, energy gradient is formed with other regions.
Preferably, in the polysilicon preparing device, the speculum is spherical reflector.
Preferably, in the polysilicon preparing device, the spherical reflector is arranged at the reflecting layer at equal intervals
In.
Preferably, in the polysilicon preparing device, the speculum is pyrometric cone speculum.
Preferably, in the polysilicon preparing device, the pyrometric cone speculum is arranged at the reflection at equal intervals
In layer.
A kind of polycrystalline silicon preparation method, the described method includes：
One support platform is provided；
Reflecting layer is set on the support platform surface, and the reflecting layer has multiple speculums and diffusing reflection layer, described
Diffusing reflection layer is arranged between the speculum and the speculum；
Glass substrate is provided on the reflecting layer；
Buffer layer is provided on the glass substrate；
Amorphous silicon layer is provided on the buffer layer；
When carrying out laser annealing, penetrate occur when the laser of the amorphous silicon layer is radiated at the diffusing reflection layer region it is unrestrained
Reflection；When being radiated at the reflector area, the laser of reflection can be converged on the amorphous silicon layer, so that the amorphous in the region
Silicon can be absorbed into energy, and energy gradient is formed with other regions.
Preferably, in the polycrystalline silicon preparation method, the speculum is spherical reflector.
Preferably, in the polycrystalline silicon preparation method, the spherical reflector is arranged at the reflecting layer at equal intervals
In.
Preferably, in the polycrystalline silicon preparation method, the speculum is pyrometric cone speculum.
Preferably, in the polycrystalline silicon preparation method, the pyrometric cone speculum is arranged at the reflection at equal intervals
In layer.
Compared with the prior art, the present invention is described unrestrained by setting multiple speculums and diffusing reflection layer on support platform surface
Reflecting layer is arranged between the speculum and the speculum, when carrying out laser annealing, penetrates swashing for the amorphous silicon layer
When being radiated at the diffusing reflection layer region diffusing reflection occurs for light；When being radiated at the reflector area, the laser of reflection can converge
On the amorphous silicon layer, so that the non-crystalline silicon in the region can be absorbed into energy, energy gradient is formed with other regions.Therefore,
Direction of growth when can control crystallization direction and control polysilicon formation improves the size of crystal grain, improves the electronics of polysilicon
Mobility.
The above to allow the present invention can be clearer and more comprehensible, preferred embodiment cited below particularly, and coordinate institute's accompanying drawings, be made
Detailed description are as follows.
【Description of the drawings】
Fig. 1 is the structure diagram for the polysilicon preparing device that the prior art provides；
Fig. 2 is the structure diagram for the polysilicon preparing device that the prior art provides；
Fig. 3 is the structure diagram of polysilicon preparing device provided in an embodiment of the present invention；
Fig. 4 is the realization flow diagram of polycrystalline silicon preparation method provided in an embodiment of the present invention.
【Specific embodiment】
Word used in this specification " embodiment " means serving as example, example or illustration.In addition, this specification and institute
Article " one " used in attached claim can usually be interpreted to mean " one or more ", unless otherwise or
Understand guiding singulative from context.
In the present invention, by support platform surface multiple speculums and diffusing reflection layer, the diffusing reflection layer being set to set
It is placed between the speculum and the speculum, when carrying out laser annealing, the laser for penetrating the amorphous silicon layer is radiated at
Diffusing reflection occurs during the diffusing reflection layer region；When being radiated at the reflector area, the laser of reflection can converge in described non-
On crystal silicon layer, so that the non-crystalline silicon in the region can be absorbed into energy, energy gradient is formed with other regions.Accordingly, it is capable to control knot
Chip to and direction of growth during control polysilicon formation, improve the size of crystal grain, improve the electron mobility of polysilicon.
In order to illustrate technical solutions according to the invention, illustrated below by specific embodiment.
Referring to Fig. 3, the structure diagram for polysilicon preparing device provided in an embodiment of the present invention；For the ease of saying
It is bright, it illustrates only and the relevant part of the embodiment of the present invention.
The polysilicon preparing device includes：One support platform 10 is provided with reflecting layer on 10 surface of support platform,
The reflecting layer have multiple speculums 20 and diffusing reflection layer 30, the diffusing reflection layer 30 be arranged at the speculum 20 with it is described
Between speculum 20, glass substrate 40 is provided on the reflecting layer, buffer layer 50 is provided on the glass substrate 40,
Amorphous silicon layer 60 is provided on the buffer layer 50.
In embodiments of the present invention, when carrying out laser annealing, penetrate the amorphous silicon layer 60 laser be radiated at it is described
Diffusing reflection occurs during diffusing reflection 30 region of layer；When being radiated at 20 region of speculum, the laser of reflection can converge in described non-
On crystal silicon layer 60, so that the non-crystalline silicon in the region can be absorbed into energy, energy gradient is formed with other regions.
As a preferred embodiment of the present invention, the speculum 20 is spherical reflector.The spherical reflector is at equal intervals
It is arranged in the reflecting layer.Specifically, the spherical reflector in cells arranged in matrix in the reflecting layer.It however, can
With understanding, the size of multiple spherical reflectors can be identical or differs.Matrix can be arranged flexibly.
As another preferred embodiment of the present invention, the speculum 20 is pyrometric cone speculum.The pyrometric cone speculum
It is arranged at equal intervals in the reflecting layer.Specifically, the pyrometric cone speculum in cells arranged in matrix in the reflecting layer.
It is understood, however, that the size of multiple pyrometric cone speculums can be identical or differs.Matrix can be arranged flexibly.
As further embodiment of the present invention, the speculum includes spherical reflector and pyrometric cone speculum, described
Spherical reflector and the pyrometric cone speculum are alternately disposed in the reflecting layer, and the diffusing reflection layer is arranged at the spherical surface
Between speculum and the pyrometric cone speculum.It is understood, however, that the spherical reflector and pyrometric cone reflection
The size of mirror can be identical or differs.The spherical reflector and the pyrometric cone speculum it is equally spaced be arranged at it is described anti-
It penetrates in layer.
Referring to Fig. 4, the realization flow diagram for polycrystalline silicon preparation method provided in an embodiment of the present invention.The polycrystalline
Silicon preparation method comprises the following steps：
In step S101, a support platform is provided；
In step s 102, the support platform surface set reflecting layer, the reflecting layer have multiple speculums and
Diffusing reflection layer, the diffusing reflection layer are arranged between the speculum and the speculum；
In step s 103, it is provided with glass substrate on the reflecting layer；
In step S104, buffer layer is provided on the glass substrate；
In step S105, amorphous silicon layer is provided on the buffer layer；
When carrying out laser annealing, penetrate occur when the laser of the amorphous silicon layer is radiated at the diffusing reflection layer region it is unrestrained
Reflection；When being radiated at the reflector area, the laser of reflection can be converged on the amorphous silicon layer, so that the amorphous in the region
Silicon can be absorbed into energy, and energy gradient is formed with other regions.
As a preferred embodiment of the present invention, the speculum is spherical reflector.The spherical reflector is set at equal intervals
It is placed in the reflecting layer.Specifically, the spherical reflector in cells arranged in matrix in the reflecting layer.However, it is possible to
Understand, the size of multiple spherical reflectors can be identical or differs.Matrix can be arranged flexibly.
As another preferred embodiment of the present invention, the speculum is pyrometric cone speculum.Described pyrometric cone speculum etc.
It is arranged at intervals in the reflecting layer.Specifically, the pyrometric cone speculum in cells arranged in matrix in the reflecting layer.So
And, it is to be understood that the size of multiple pyrometric cone speculums can be identical or differs.Matrix can be arranged flexibly.
As further embodiment of the present invention, the speculum includes spherical reflector and pyrometric cone speculum, described
Spherical reflector and the pyrometric cone speculum are alternately disposed in the reflecting layer, and the diffusing reflection layer is arranged at the spherical surface
Between speculum and the pyrometric cone speculum.It is understood, however, that the spherical reflector and pyrometric cone reflection
The size of mirror can be identical or differs.The spherical reflector and the pyrometric cone speculum it is equally spaced be arranged at it is described anti-
It penetrates in layer.
In conclusion polysilicon preparing device provided by the invention and method, multiple by being set on support platform surface
Speculum and diffusing reflection layer, the diffusing reflection layer are arranged between the speculum and the speculum, when progress laser annealing
When, it penetrates when the laser of the amorphous silicon layer is radiated at the diffusing reflection layer region and diffusing reflection occurs；It is radiated at the speculum
During region, the laser of reflection can be converged on the amorphous silicon layer, so that the non-crystalline silicon in the region can be absorbed into energy, with other
Region forms energy gradient.Accordingly, it is capable to direction of growth when controlling crystallization direction and controlling polysilicon formation, improves crystal grain
Size, improve the electron mobility of polysilicon.
Although the present invention, those skilled in the art have shown and described compared with one or more realization methods
Based on the reading to the specification and drawings and understand it will be appreciated that equivalent variations and modification.The present invention includes all such repair
Change and modification, and be limited only by the scope of the following claims.In particular, to the various functions performed by said modules, use
Being intended to correspond to the specified function of performing the component in the term of component as description, (such as it is functionally of equal value
) random component (unless otherwise instructed), even if with performing the exemplary realization of this specification shown in this article in structure
The open structure of function in mode is not equivalent.In addition, although the special characteristic of this specification is compared with several realization sides
Only one in formula is disclosed, but this feature can with as can be it is expected and favorably for given or specific application
Other one or more combinations of features of other realization methods.Moreover, with regard to term " comprising ", " having ", " containing " or its deformation
For being used in specific embodiment or claim, such term is intended to the bag in a manner of similar to term "comprising"
It includes.
In conclusion although the present invention is disclosed above with preferred embodiment, above preferred embodiment is not to limit
The system present invention, those of ordinary skill in the art without departing from the spirit and scope of the present invention, can make various changes and profit
Decorations, therefore protection scope of the present invention is subject to the scope that claim defines.
Claims (6)
1. a kind of polysilicon preparing device, which is characterized in that the polysilicon preparing device includes：One support platform, described
Support platform surface is provided with reflecting layer, and the reflecting layer has multiple speculums and diffusing reflection layer, and the diffusing reflection layer is set
Between the speculum and the speculum, glass substrate is provided on the reflecting layer, is set on the glass substrate
There is buffer layer, amorphous silicon layer is provided on the buffer layer；When carrying out laser annealing, the laser of the amorphous silicon layer is penetrated
Diffusing reflection occurs when being radiated at the diffusing reflection layer region；When being radiated at the reflector area, the laser of reflection can converge in
On the amorphous silicon layer, so that the non-crystalline silicon in the region can be absorbed into energy, energy gradient is formed with other regions；Wherein, institute
State speculum in cells arranged in matrix in the reflecting layer；
Wherein, the speculum includes spherical reflector and pyrometric cone speculum, and the spherical reflector and the pyrometric cone are anti-
It penetrates mirror to be alternately disposed in the reflecting layer, the diffusing reflection layer is arranged at the spherical reflector and the pyrometric cone speculum
Between；
Wherein, the size of multiple spherical reflectors differs, and the size of multiple pyrometric cone speculums differs.
2. polysilicon preparing device according to claim 1, which is characterized in that the spherical reflector is arranged at equal intervals
In the reflecting layer.
3. polysilicon preparing device according to claim 1, which is characterized in that the pyrometric cone speculum is set at equal intervals
In the reflecting layer.
4. a kind of polycrystalline silicon preparation method, which is characterized in that the described method includes：
One support platform is provided；
Reflecting layer is set on the support platform surface, and the reflecting layer has multiple speculums and diffusing reflection layer, described unrestrained anti-
Layer is penetrated to be arranged between the speculum and the speculum；Wherein, the speculum is in cells arranged in matrix in the reflection
In layer；Wherein, the speculum includes spherical reflector and pyrometric cone speculum, and the spherical reflector and the pyrometric cone are anti-
It penetrates mirror to be alternately disposed in the reflecting layer, the diffusing reflection layer is arranged at the spherical reflector and the pyrometric cone speculum
Between；Wherein, the size of multiple spherical reflectors differs, and the size of multiple pyrometric cone speculums differs；
Glass substrate is provided on the reflecting layer；
Buffer layer is provided on the glass substrate；
Amorphous silicon layer is provided on the buffer layer；
When carrying out laser annealing, penetrate occur when the laser of the amorphous silicon layer is radiated at the diffusing reflection layer region it is unrestrained anti-
It penetrates；When being radiated at the reflector area, the laser of reflection can be converged on the amorphous silicon layer, so that the non-crystalline silicon in the region
Energy can be absorbed into, energy gradient is formed with other regions.
5. polycrystalline silicon preparation method according to claim 4, which is characterized in that the spherical reflector is arranged at equal intervals
In the reflecting layer.
6. polycrystalline silicon preparation method according to claim 4, which is characterized in that the pyrometric cone speculum is set at equal intervals
In the reflecting layer.
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