CN105140180B - The method of making a thin film transistor array substrate and a method for fabricating a polysilicon material - Google Patents

The method of making a thin film transistor array substrate and a method for fabricating a polysilicon material Download PDF

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CN105140180B
CN105140180B CN 201510521942 CN201510521942A CN105140180B CN 105140180 B CN105140180 B CN 105140180B CN 201510521942 CN201510521942 CN 201510521942 CN 201510521942 A CN201510521942 A CN 201510521942A CN 105140180 B CN105140180 B CN 105140180B
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amorphous silicon
silicon layer
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CN105140180A (en )
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唐丽娟
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武汉华星光电技术有限公司
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Abstract

本发明公开了一种薄膜晶体管阵列基板的制作方法及多晶硅材料的制作方法。 The present invention discloses a manufacturing method of a method of manufacturing a thin film transistor array substrate and the polysilicon material. 该薄膜晶体管阵列基板的制作方法包括以下步骤:A、在基板上设置缓冲层和非晶硅层;B、利用紫外光照射非晶硅层,以使非晶硅层中的硅‑氢键断裂,照射时间为第一预定时间;C、利用红外线光对经过紫外光照射后的非晶硅层进行加热,以使非晶硅层中的氢从非晶硅层中脱离,加热时间为第二预定时间;D、对经过加热后的非晶硅层进行清洗;E、利用激光将清洗后的非晶硅层进行退火结晶处理,以形成多晶硅层;F、在多晶硅层上和/或缓冲层上设置显示器件。 The method for manufacturing a thin film transistor array substrate comprising the steps of: A, a buffer layer and an amorphous silicon layer on a substrate; B, the amorphous silicon layer is irradiated with ultraviolet light, so that the amorphous silicon layer in the silicon - hydrogen bonds irradiation time of a first predetermined time; C, using infrared light passes through the amorphous silicon layer after ultraviolet irradiation is heated, the amorphous silicon layer to cause release of hydrogen from the amorphous silicon layer is heated a second time a predetermined time; D, the amorphous silicon layer is heated after washing; E, the amorphous silicon layer by laser annealing crystallization after the washing process to form a polysilicon layer; F, on the polysilicon layer and / or a buffer layer provided on the display device. 本发明能有效降低薄膜晶体管阵列基板的制造成本和制造时间,提高薄膜晶体管阵列基板的制造效率。 The present invention can effectively reduce the manufacturing cost and manufacturing time of the TFT array substrate, improve the manufacturing efficiency of a thin film transistor array substrate.

Description

薄膜晶体管阵列基板的制作方法及多晶硅材料的制作方法【技术领域】 The method of making a thin film transistor array substrate and a method for fabricating a polysilicon material TECHNICAL FIELD

[0001] 本发明涉及显示技术领域,特别涉及一种薄膜晶体管阵列基板的制作方法及多晶硅材料的制作方法。 [0001] The present invention relates to the field of display technology, and particularly relates to a method for making a thin film transistor array substrate and a method for fabricating a polysilicon material. 【背景技术】 【Background technique】

[0002] 准分子激光退火(ELA,Excimer Laser Annealing)是传统的LTPS-TFT-LCD (Low Temperature Poly Silicon Thin FilmTransistor Liquid Crystal Display)中将非晶硅制作成多晶硅的一项重要工序。 [0002] The excimer laser annealing (ELA, Excimer Laser Annealing) is conventional in the LTPS-TFT-LCD (Low Temperature Poly Silicon Thin FilmTransistor Liquid Crystal Display) made of amorphous silicon into polycrystalline silicon is an important step.

[0003] 一般来讲,非晶硅中的氢含量大约为10 %。 [0003] In general, the hydrogen content of the amorphous silicon is about 10%. 要制造出品质较好的多晶硅,需要对非晶硅进行热处理,以去除非晶硅中的氢。 To produce good quality polycrystalline silicon, the amorphous silicon requires a heat treatment to remove hydrogen in the amorphous silicon. 而ELA工序中要求氢的含量达到1%以下,否则非晶硅薄膜中会出现氢爆的现象,这会导致多晶硅的表面存在严重的缺陷。 The ELA process requires hydrogen content of 1% or less, an amorphous silicon thin film or a hydrogen explosion phenomena occur, which can lead to serious defects in the surface of the polysilicon.

[0004] 要对非晶硅进行热处理,一般需要将非晶硅加热到较高的温度(例如,490摄氏度至520摄氏度),加热的时间为20分钟以上。 [0004] The heat treatment is performed to the amorphous silicon, amorphous silicon typically requires heating to a higher temperature (e.g., 490 degrees Celsius to 520 degrees Celsius), heating time of 20 minutes or more. 这大大增加了制造成本和制造时间。 This greatly increases manufacturing costs and manufacturing time.

[0005] 故,有必要提出一种新的技术方案,以解决上述技术问题。 [0005] Therefore, it is necessary to provide a new technical solution to solve the above problems. 【发明内容】 [SUMMARY]

[0006] 本发明的目的在于提供一种薄膜晶体管阵列基板的制作方法及多晶硅材料的制作方法,其能有效降低薄膜晶体管阵列基板的制造成本和制造时间,提高薄膜晶体管阵列基板的制造效率。 [0006] The object of the present invention to provide a method for manufacturing a thin film transistor array substrate and a method for fabricating a polysilicon material, which can reduce the manufacturing cost and manufacturing time of the TFT array substrate, improve the manufacturing efficiency of a thin film transistor array substrate.

[0007] 为解决上述问题,本发明的技术方案如下: [0007] In order to solve the above problem, the technical solution of the present invention is as follows:

[0008] 一种薄膜晶体管阵列基板的制作方法,所述方法包括以下步骤:A、在基板上设置缓冲层和非晶硅层,其中,所述缓冲层位于所述基板上,所述非晶硅层位于所述缓冲层上, 所述非晶硅层是由非晶硅材料形成的材料层;B、利用紫外光照射所述非晶硅层,以使所述非晶硅层中的硅-氢键断裂,照射时间为第一预定时间;C、利用红外线光对经过所述紫外光照射后的所述非晶硅层进行加热,以使所述非晶硅层中的氢从所述非晶硅层中脱离,加热时间为第二预定时间;D、对经过加热后的所述非晶硅层进行清洗;E、利用激光将清洗后的所述非晶硅层进行退火结晶处理,以形成多晶硅层;以及F、在所述多晶硅层上和/或所述缓冲层上设置显示器件,以形成薄膜晶体管阵列基板,其中,所述显示器件至少包括信号线、 像素电极;所述第二预定时间处于1分钟至20分钟 [0008] The method for manufacturing a thin film transistor array substrate, said method comprising the steps of: A, a buffer layer and an amorphous silicon layer on a substrate, wherein said buffer layer on said substrate, said amorphous a silicon layer on the buffer layer, the amorphous silicon layer is a material layer formed of amorphous silicon material; B, the amorphous silicon layer is irradiated with ultraviolet light, so that the amorphous silicon layer - hydrogen bonds, the irradiation time is a first predetermined time; C, using infrared light to the amorphous silicon layer through ultraviolet irradiation after the heating, so that the amorphous silicon layer from the hydrogen from the amorphous silicon layer, the heating time is a second predetermined time; D, the amorphous silicon layer is heated after washing; E, the amorphous silicon layer using a laser annealing crystallization after the washing process, to form a polysilicon layer; F., disposed on the polysilicon layer and / or on the buffer layer of the display device to form a thin film transistor array substrate, wherein the display device comprises at least a signal line, a pixel electrode; a second second predetermined time is 1-20 minutes 范围内;经过所述红外线光照射后的所述非晶硅层的温度处于预定温度范围内,所述预定温度范围为300摄氏度至400摄氏度。 The range; through the infrared temperature of the amorphous silicon layer after light irradiation is within a predetermined temperature range, the predetermined temperature range of 300 degrees Celsius to 400 degrees Celsius.

[0009] 在上述薄膜晶体管阵列基板的制作方法中,所述第一预定时间处于20秒至300秒的范围内。 [0009] In the method for manufacturing the thin film transistor array substrate, said first predetermined time is in the range of 20 to 300 seconds.

[0010] 在上述薄膜晶体管阵列基板的制作方法中,经过加热后的所述非晶硅层中的氢含量小于或等于1.0%。 [0010] In the method for manufacturing the thin film transistor array substrate, through the hydrogen content of the amorphous silicon layer after heating is less than or equal to 1.0%.

[0011] 一种多晶硅材料的制作方法,所述方法包括以下步骤:A、利用紫外光照射非晶硅材料,以使所述非晶硅材料中的硅-氢键断裂,照射时间为第一预定时间;B、利用红外线光对经过所述紫外光照射后的所述非晶硅材料进行加热,以使所述非晶硅材料中的氢从所述非晶硅材料中脱离,加热时间为第二预定时间;C、对经过加热后的所述非晶硅材料进行清洗;以及D、利用激光将清洗后的所述非晶硅材料进行退火结晶处理,以形成多晶硅材料;所述第二预定时间处于1分钟至20分钟的范围内;经过所述红外线光照射后的所述非晶硅层的温度处于预定温度范围内,所述预定温度范围为300摄氏度至400摄氏度。 [0011] The manufacturing method of a polysilicon material, said method comprising the steps of: A, an amorphous silicon material is irradiated with ultraviolet light, so that the amorphous material is silicon - hydrogen bonds, a first irradiation time a predetermined time; B, by using the infrared light passes through the amorphous silicon material after the ultraviolet irradiation heating, so that the hydrogen in the amorphous silicon material disengaged from the amorphous material, the heating time is a second predetermined time; C, after heating of the amorphous material may be washed; and D, the amorphous silicon material using a laser annealing crystallization after the washing process to form a polysilicon material; the second the predetermined time is in the range of 1 to 20 minutes; the temperature of the infrared ray passing through the amorphous silicon layer after light irradiation is within a predetermined temperature range, the predetermined temperature range of 300 degrees Celsius to 400 degrees Celsius.

[0012]在上述多晶娃材料的制作方法中,所述第一预定时间处于20秒至300秒的范围内。 [0012] In the method for manufacturing the polycrystalline material Wa, the first predetermined time is in the range of 20 to 300 seconds. [0013]在上述多晶硅材料的制作方法中,经过加热后的所述非晶硅层中的氢含量小于或等于1.0%。 [0013] In the above-described method for fabricating a polysilicon material, through the hydrogen content of the amorphous silicon layer after heating is less than or equal to 1.0%.

[0014]相对现有技术,本发明有效降低薄膜晶体管阵列基板或多晶硅材料的制造成本和制造时间,提高所述薄膜晶体管阵列基板或所述多晶硅材料的制造效率。 [0014] Compared with the prior art, the present invention effectively reduce the TFT array substrate or the manufacturing cost and manufacturing time of the polysilicon material, improve the manufacturing efficiency of the thin film transistor array substrate and said polysilicon material.

[0015]为让本发明的上述内容能更明显易懂,下文特举优选实施例,并配合所附图式,作详细说明如下。 [0015] In order to make the above-described present invention can be more fully understood by reading the following preferred embodiments and accompanying figures, described in detail below. 【附图说明】 BRIEF DESCRIPTION

[0016]图1至图5为本发明的薄膜晶体管阵列基板的制作方法的示意图; [0016] Figures 1 to 5 a schematic view of a method for manufacturing a thin film transistor array substrate of the present invention;

[0017]图6为本发明的薄膜晶体管阵列基板的制作方法的流程图; A flowchart of a method for manufacturing a thin film transistor array substrate [0017] FIG. 6 of the present invention;

[0018]图7为本发明的多晶硅材料的制作方法的流程图。 A flowchart of a method of manufacturing the polysilicon material of the invention [0018] Figure 7 is. 【具体实施方式】 【detailed description】

[0019]本说明书所使用的词语“实施例”意指实例、示例或例证。 Means instance, or illustration. [0019] As used in this specification, the words "Examples." 此外,本说明书和所附权利要求中所使用的冠词“一”一般地可以被解释为“一个或多个”,除非另外指定或从上下文可以清楚确定单数形式。 In addition, the articles of the present specification and the appended claims as "a," may be generally interpreted as "one or more" unless specified otherwise or clear from the context to determine a singular form.

[0020]参考图1至图6,图1至图5为本发明的薄膜晶体管阵列基板的制作方法的示意图, 图6为本发明的薄膜晶体管阵列基板的制作方法的流程图。 6, a schematic diagram of the method for manufacturing the thin film transistor array substrate of FIG. 1 to FIG. 5 of the present invention, a flowchart of method for manufacturing a thin film transistor array substrate of FIG. 6 of the present invention [0020] Referring to FIG. 1 to FIG.

[0021]本实施例的薄膜晶体管阵列基板的制作方法包括以下步骤: [0021] The present method of manufacturing a thin film transistor array substrate according to an embodiment comprises the steps of:

[0022]步骤601、在基板101上设置缓冲层102和非晶硅层103,其中,所述缓冲层102位于所述基板101上,所述非晶硅层103位于所述缓冲层102上,所述非晶硅层103是由非晶硅材料形成的材料层。 [0022] Step 601, a buffer layer 102 and the amorphous silicon layer 103 on the substrate 101, wherein the buffer layer 102 positioned on the substrate 101, the amorphous silicon layer 103 is located on the buffer layer 102, the amorphous silicon layer 103 is a material layer formed of an amorphous silicon material.

[0023]步骤6〇2、利用紫外光201照射所述非晶硅层1〇3,以使所述非晶硅层103中的硅-氢(Si-H)键断裂,照射时间为第一预定时间。 [0023] Step 6〇2, with ultraviolet light irradiating the amorphous silicon layer 201 1〇3 to the amorphous silicon layer 103 - hydrogen (Si-H) bond is broken, a first irradiation time scheduled time.

[0024]步骤603、利用红外线光301对经过所述紫外光201照射后的所述非晶硅层1〇3进行加热,以使所述非晶硅层103中的非晶硅分子1031的氢(元素)从所述非晶硅层103中脱离(例如,所述非晶硅层103中的氢以氢气的形式从所述非晶硅层103中逸出),加热时间为第二预定时间。 [0024] Step 603, using infrared light 301 pairs after the amorphous silicon layer 201 is irradiated with the ultraviolet light 1〇3 heated, so that the amorphous silicon layer 103 of the amorphous molecules in hydrogen 1031 (element) is disengaged from said amorphous silicon layer 103 (e.g., the hydrogen in the amorphous silicon layer 103 in the form of hydrogen gas to escape from the amorphous silicon layer 103), a second heating time of a predetermined time .

[0025]步骤604、对经过加热后的所述非晶硅层103进行清洗。 [0025] Step 604, the amorphous silicon layer 103 is heated after cleaning.

[0026]步骤6〇5、利用激光将清洗后的所述非晶硅层1〇3进行退火结晶处理,以形成多晶娃层401。 [0026] Step 6〇5, the amorphous silicon layer using a laser after the washing 1〇3 annealing crystallized to form a polycrystalline layer 401 baby. 此步骤所对应的技术即为ELA(Excimer Laser Annealing,准分子激光退火)技术。 This step corresponds to the art is the ELA (Excimer Laser Annealing, excimer laser annealing) technology.

[0027]步骤606、在所述多晶硅层401上和/或所述缓冲层102上设置显示器件501,以形成薄膜晶体管阵列基板,其中,所述显示器件501至少包括信号线、像素电极,所述信号线包括扫描线、数据线。 [0027] Step 606, disposed on the polysilicon layer 401 and / or the display device 501 a buffer layer 102 to form a thin film transistor array substrate, wherein the display device 501 includes at least a signal line, a pixel electrode, the said signal lines include scan lines, data lines.

[0028] 在本实施例中,所述第一预定时间处于20秒至300秒(5分钟)的范围内,例如,所述第一预定时间为20秒、25秒、30秒、35秒、40秒、45秒、50秒、55秒、60秒、65秒、70秒、75秒、80 秒、85秒、90秒、95秒、100秒、105秒、110秒、115秒、120秒、125秒、130秒、135秒、140秒、145 秒、150 秒、155 秒、160 秒、165 秒、170 秒、175 秒、180 秒、185 秒、190 秒、195 秒、200秒、205 秒、 210秒、215秒、220秒、225 秒、230 秒、235 秒、240秒、245 秒、250秒、255秒、260秒、265秒、270 秒、275秒、280秒、285秒、290秒、295秒、300秒。 [0028] In the present embodiment, the first predetermined time is in the range from 20 to 300 seconds (five minutes), for example, the first predetermined time of 20 seconds, 25 seconds, 30 seconds, 35 seconds, 40 seconds, 45 seconds, 50 seconds, 55 seconds, 60 seconds, 65 seconds, 70 seconds, 75 seconds, 80 seconds, 85 seconds, 90 seconds, 95 seconds, 100 seconds, 105 seconds, 110 seconds, 115 seconds, 120 seconds , 125 seconds, 130 seconds, 135 seconds, 140 seconds, 145 seconds, 150 seconds, 155 seconds, 160 seconds, 165 seconds, 170 seconds, 175 seconds, 180 seconds, 185 seconds, 190 seconds, 195 seconds, 200 seconds, 205 seconds, 210 seconds, 215 seconds, 220 seconds, 225 seconds, 230 seconds, 235 seconds, 240 seconds, 245 seconds, 250 seconds, 255 seconds, 260 seconds, 265 seconds, 270 seconds, 275 seconds, 280 seconds, 285 seconds, 290 seconds, 295 seconds, 300 seconds.

[0029] 优选地,所述第一预定时间处于1分钟至2分钟的范围内。 [0029] Preferably, the first predetermined time is in the range of 1 minute to 2 minutes.

[0030] 在本实施例中,所述第二预定时间处于1分钟至20分钟的范围内,例如,所述第二预定时间为60秒、75秒、90秒、105秒、120秒、135秒、150秒、165秒、180秒、195秒、210秒、225 秒、240秒、255秒、270秒、285秒、300秒、315秒、330秒、345秒、360秒、375秒、390秒、405秒、 420秒、435秒、450秒、465秒、480秒、495秒、510秒、525秒、540秒、555秒、570秒、585秒、600 秒、615秒、630秒、645秒、660秒、675秒、690秒、705秒、720秒、735秒、750秒、765秒、780秒、 795秒、810秒、825秒、840秒、855秒、870秒、885秒、900秒、915秒、930秒、945秒、960秒、975 秒、990 秒、1005秒、1020 秒、1035秒、1050 秒、1065 秒、1080 秒、1095 秒、1110 秒、1125 秒、1140 秒、1155秒、1170秒、1185秒、1200秒。 [0030] In the present embodiment, the second predetermined time is in the range of 1 minute to 20 minutes, for example, the second predetermined time of 60 seconds, 75 seconds, 90 seconds, 105 seconds, 120 seconds, 135 seconds, 150 seconds, 165 seconds, 180 seconds, 195 seconds, 210 seconds, 225 seconds, 240 seconds, 255 seconds, 270 seconds, 285 seconds, 300 seconds, 315 seconds, 330 seconds, 345 seconds, 360 seconds, 375 seconds, 390 seconds, 405 seconds, 420 seconds, 435 seconds, 450 seconds, 465 seconds, 480 seconds, 495 seconds, 510 seconds, 525 seconds, 540 seconds, 555 seconds, 570 seconds, 585 seconds, 600 seconds, 615 seconds, 630 seconds , 645 seconds, 660 seconds, 675 seconds, 690 seconds, 705 seconds, 720 seconds, 735 seconds, 750 seconds, 765 seconds, 780 seconds, 795 seconds, 810 seconds, 825 seconds, 840 seconds, 855 seconds, 870 seconds, 885 seconds, 900 seconds, 915 seconds, 930 seconds, 945 seconds, 960 seconds, 975 seconds, 990 seconds, 1005 seconds, 1020 seconds, 1035 seconds, 1050 seconds, 1065 seconds, 1080 seconds, 1095 seconds, 1110 seconds, 1125 seconds, 1140 seconds, 1155 seconds, 1170 seconds, 1185 seconds, 1200 seconds.

[0031] 优选地,所述第二预定时间处于10分钟至15分钟的范围内。 [0031] Preferably, the second predetermined time is in the range of 10 to 15 minutes.

[0032]在本实施例中,经过所述红外光照射后的所述非晶硅层103的温度处于预定温度范围内,所述预定温度范围为300摄氏度至400摄氏度,例如,所述温度为300摄氏度、305摄氏度、310摄氏度、315摄氏度、320摄氏度、325摄氏度、330摄氏度、335摄氏度、340摄氏度、 345摄氏度、350摄氏度、355摄氏度、360摄氏度、365摄氏度、370摄氏度、375摄氏度、380摄氏度、385摄氏度、390摄氏度、395摄氏度、400摄氏度。 [0032] In the present embodiment, after the temperature of the amorphous silicon layer after the irradiation of the infrared light 103 is within a predetermined temperature range, the predetermined temperature range of 300 degrees Celsius to 400 degrees Celsius, for example, the temperature is 300 degrees, 305 degrees, 310 degrees, 315 degrees, 320 degrees, 325 degrees, 330 degrees, 335 degrees, 340 degrees, 345 degrees, 350 degrees, 355 degrees, 360 degrees, 365 degrees, 370 degrees, 375 degrees, 380 degrees Celsius , 385 degrees, 390 degrees, 395 degrees, 400 degrees Celsius.

[0033] 优选地,所述预定温度范围为350摄氏度至400摄氏度。 [0033] Preferably, the predetermined temperature range is from 350 degrees Celsius to 400 degrees Celsius. 这样有利于在所述薄膜晶体管阵列基板为柔性的薄膜晶体管阵列基板(含有聚酰亚胺基板),并且所述柔性的薄膜晶体管阵列基板能承受的温度小于400摄氏度时,防止所述柔性的薄膜晶体管阵列基板因温度过高而损坏。 This facilitates when the thin film transistor array substrate is a flexible substrate, a thin film transistor array (containing polyimide substrate), and the flexible thin film transistor array substrate can withstand a temperature less than 400 degrees Celsius, to prevent the flexible film transistor array substrate damage due to high temperature.

[0034] 在本实施例中,经过加热后的所述非晶硅层103中的氢含量小于或等于lo%,gp, 所述多晶硅层401中的氢〇1)含量小于或等于1.0%,例如,所述氢含量为0.03%、〇. 11%、 0.19%、0.27%、0.35%、0.43%、0.51%、0.59%、0.67%、0.75%、0.83%、0.91%、1.0%。 [0034] In the present embodiment, after heating the hydrogen content of the amorphous silicon layer 103 is less than or equal to lo%, gp, hydrogen 〇1 said polysilicon layer 401) content is less than or equal to 1.0%, For example, the hydrogen content of 0.03%, square. 11%, 0.19%, 0.27%, 0.35%, 0.43%, 0.51%, 0.59%, 0.67%, 0.75%, 0.83%, 0.91%, 1.0%. [0035]通过上述技术方案,可以有效降低所述薄膜晶体管阵列基板的制造成本和制造时间,提高所述薄膜晶体管阵列基板的制造效率。 [0035] The above technical solution can effectively reduce the manufacturing cost and manufacturing time of the thin film transistor array substrate, improve the manufacturing efficiency of the thin film transistor array substrate.

[0036]参考图7,图7为本发明的多晶娃材料的制作方法的流程图。 7, a flowchart of FIG. 7 baby method of manufacturing a polycrystalline material of the present invention [0036] Referring to FIG.

[0037]本实施例的多晶硅材料的制作方法包括以下步骤: Polysilicon material manufacturing method of an embodiment of the [0037] present comprising the steps of:

[0038]步骤701、利用紫外光2〇1照射非晶硅材料,以使所述非晶硅材料中的硅-氢(Si-H) 键断裂,照射时间为第一预定时间。 [0038] Step 701, an amorphous silicon material is irradiated with ultraviolet 2〇1, so that the amorphous silicon material - hydrogen (Si-H) bond is broken, the irradiation time is a first predetermined time.

[0039]步骤7〇2、利用红外线光3〇1对经过所述紫外光2〇1照射后的所述非晶硅材料进行加热,以使所述非晶硅材料中的非晶硅分子1〇31的氢(元素)从所述非晶硅材料中脱离(例如,所述非晶桂材料中的氛以氢气的形式从所述非晶娃材料中逸出),加热时间为第二预定时间。 [0039] Step 7〇2, using infrared light through the 3〇1 after irradiation of the ultraviolet light 2〇1 amorphous material is heated to the amorphous silicon in the amorphous silicon material molecule 1 〇31 hydrogen (element) is disengaged from said amorphous silicon material (e.g., the amorphous material Guangxi atmosphere of hydrogen gas to escape from the form of the amorphous material Wa), a second predetermined heating time is time.

[0040] 步骤703、对经过加热后的所述非晶硅材料进行清洗。 [0040] Step 703, the amorphous silicon material is cleaned after heating.

[0041] 步骤704、利用激光将清洗后的所述非晶硅材料进行退火结晶处理,以形成多晶硅材料。 [0041] Step 704, the amorphous silicon material using a laser annealing crystallization after the washing process to form a polysilicon material. 此步骤所对应的技术即为ELA(Excimer Laser Annealing,准分子激光退火)技术。 This step corresponds to the art is the ELA (Excimer Laser Annealing, excimer laser annealing) technology. [0042]在本实施例中,所述第一预定时间处于20秒至300秒(5分钟)的范围内,例如,所述第一预定时间为20秒、25秒、30秒、35秒、40秒、45秒、50秒、55秒、60秒、65秒、70秒、75秒、80 秒、85秒、90秒、95秒、100秒、105秒、110秒、115秒、120秒、125秒、130秒、135秒、140秒、145 秒、150 秒、155 秒、160 秒、165 秒、170 秒、175 秒、180 秒、185 秒、190 秒、195 秒、200秒、205 秒、 210秒、215秒、220秒、225秒、230秒、235秒、240秒、245秒、250秒、255秒、260秒、265秒、270 秒、275秒、280秒、285秒、290秒、295秒、300秒。 [0042] In the present embodiment, the first predetermined time is in the range from 20 to 300 seconds (five minutes), for example, the first predetermined time of 20 seconds, 25 seconds, 30 seconds, 35 seconds, 40 seconds, 45 seconds, 50 seconds, 55 seconds, 60 seconds, 65 seconds, 70 seconds, 75 seconds, 80 seconds, 85 seconds, 90 seconds, 95 seconds, 100 seconds, 105 seconds, 110 seconds, 115 seconds, 120 seconds , 125 seconds, 130 seconds, 135 seconds, 140 seconds, 145 seconds, 150 seconds, 155 seconds, 160 seconds, 165 seconds, 170 seconds, 175 seconds, 180 seconds, 185 seconds, 190 seconds, 195 seconds, 200 seconds, 205 seconds, 210 seconds, 215 seconds, 220 seconds, 225 seconds, 230 seconds, 235 seconds, 240 seconds, 245 seconds, 250 seconds, 255 seconds, 260 seconds, 265 seconds, 270 seconds, 275 seconds, 280 seconds, 285 seconds, 290 seconds, 295 seconds, 300 seconds.

[0043] 优选地,所述第一预定时间处于1分钟至2分钟的范围内。 [0043] Preferably, the first predetermined time is in the range of 1 minute to 2 minutes.

[0044]在本实施例中,所述第二预定时间处于1分钟至20分钟的范围内,例如,所述第二预定时间为60秒、75秒、90秒、105秒、120秒、135秒、150秒、165秒、180秒、195秒、210秒、225 秒、240秒、255 秒、270 秒、285秒、300秒、315 秒、330 秒、345 秒、360秒、375 秒、390秒、405秒、 420秒、435秒、450秒、465秒、480秒、495秒、510秒、525秒、540秒、555秒、570秒、585秒、600 秒、615秒、630秒、645秒、660秒、675秒、690 秒、705 秒、720 秒、735秒、750秒、765秒、780秒、 795秒、810秒、825秒、840秒、855秒、870秒、885秒、900秒、915秒、930秒、945秒、960秒、975 秒、990 秒、1005秒、1020 秒、1035秒、1050 秒、1065 秒、1080 秒、1095 秒、1110 秒、1125 秒、1140 秒、1155秒、1170秒、1185秒、1200秒。 [0044] In the present embodiment, the second predetermined time is in the range of 1 minute to 20 minutes, for example, the second predetermined time of 60 seconds, 75 seconds, 90 seconds, 105 seconds, 120 seconds, 135 seconds, 150 seconds, 165 seconds, 180 seconds, 195 seconds, 210 seconds, 225 seconds, 240 seconds, 255 seconds, 270 seconds, 285 seconds, 300 seconds, 315 seconds, 330 seconds, 345 seconds, 360 seconds, 375 seconds, 390 seconds, 405 seconds, 420 seconds, 435 seconds, 450 seconds, 465 seconds, 480 seconds, 495 seconds, 510 seconds, 525 seconds, 540 seconds, 555 seconds, 570 seconds, 585 seconds, 600 seconds, 615 seconds, 630 seconds , 645 seconds, 660 seconds, 675 seconds, 690 seconds, 705 seconds, 720 seconds, 735 seconds, 750 seconds, 765 seconds, 780 seconds, 795 seconds, 810 seconds, 825 seconds, 840 seconds, 855 seconds, 870 seconds, 885 seconds, 900 seconds, 915 seconds, 930 seconds, 945 seconds, 960 seconds, 975 seconds, 990 seconds, 1005 seconds, 1020 seconds, 1035 seconds, 1050 seconds, 1065 seconds, 1080 seconds, 1095 seconds, 1110 seconds, 1125 seconds, 1140 seconds, 1155 seconds, 1170 seconds, 1185 seconds, 1200 seconds.

[0045] 优选地,所述第二预定时间处于10分钟至15分钟的范围内。 [0045] Preferably, the second predetermined time is in the range of 10 to 15 minutes.

[0046] 在本实施例中,经过所述红外光照射后的所述非晶硅材料的温度处于预定温度范围内,所述预定温度范围为300摄氏度至400摄氏度,例如,所述温度为300摄氏度、305摄氏度、31〇摄氏度、315摄氏度、320摄氏度、325摄氏度、330摄氏度、335摄氏度、340摄氏度、345 摄氏度、350摄氏度、355摄氏度、360摄氏度、365摄氏度、370摄氏度、375摄氏度、380摄氏度、 385摄氏度、390摄氏度、395摄氏度、400摄氏度。 [0046] In the present embodiment, after the temperature of the infrared light irradiation after the amorphous silicon material is at a temperature within a predetermined range, said predetermined temperature range is from 300 degrees Celsius to 400 degrees Celsius, for example, the temperature is 300 Celsius, 305 degrees Celsius, 31〇 degrees, 315 degrees, 320 degrees, 325 degrees, 330 degrees, 335 degrees, 340 degrees, 345 degrees, 350 degrees, 355 degrees, 360 degrees, 365 degrees, 370 degrees, 375 degrees, 380 degrees Celsius , 385 degrees, 390 degrees, 395 degrees, 400 degrees Celsius.

[0047] 优选地,所述预定温度范围为350摄氏度至400摄氏度。 [0047] Preferably, the predetermined temperature range is from 350 degrees Celsius to 400 degrees Celsius.

[0048] 在本实施例中,经过加热后的所述非晶硅材料中的氢含量小于或等于1.0%,即, 所述多晶硅材料中的氢(H)含量小于或等于1.0 %,例如,所述氢含量为0.03 %、0.11 %、 0.19%、0.27%、0.35%、0.43%、0.51%、0.59%、0.67%、0.75%、0.83%、0.91%、1.0%。 [0048] In the present embodiment, after the hydrogen content of the amorphous material after heating is less than or equal to 1.0%, i.e., the polysilicon material in hydrogen (H) content is less than or equal to 1.0%, e.g., the hydrogen content of 0.03%, 0.11%, 0.19%, 0.27%, 0.35%, 0.43%, 0.51%, 0.59%, 0.67%, 0.75%, 0.83%, 0.91%, 1.0%. [0049]通过上述技术方案,可以有效降低所述多晶硅材料的制造成本和制造时间,提高所述多晶硅材料的制造效率。 [0049] Through the above technical solution can effectively reduce the manufacturing cost and time of the polycrystalline material, improve the production efficiency of the polycrystalline material.

[0050]尽管已经相对于一个或多个实现方式示出并描述了本发明,但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。 [0050] Although with respect to one or more implementations shown and described the present invention, those skilled in the art upon reading and understanding of this specification and the accompanying drawings will occur equivalent variations and modifications. 本发明包括所有这样的修改和变型,并且仅由所附权利要求的范围限制。 The present invention includes all such variations and modifications, and is limited only by the limits of the appended claims. 特别地关于由上述组件执行的各种功能,用于描述这样的组件的术语旨在对应于执行所述组件的指定功能(例如其在功能上是等价的)的任意组件(除非另外指示),即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。 In particular regard to the various functions performed by the above described components, the terms used to describe such components are intended to correspond to the execution of the functions specified component (e.g., that is functionally equivalent) of any component (unless otherwise indicated) discloses the structure and function even in the structure shown herein to achieve the implementation of an exemplary embodiment of the present specification is not equivalent. 此外,尽管本说明书的特定特征已经相对于若千实现方式中的仅一个被公开,但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。 In addition, while a particular feature of this specification has been disclosed with respect to only one of the implementations if one thousand, as such feature may be a desirable and advantageous for other implementations of a given or particular application or other combinations of features. 而且,就术语“包括”、“具有”、“含有”或其变形攸用仕共怀头施万式或权利要求中而言,这样的术语旨在以与术诰笾a相似的刀JVEi 括。 Also, the terms "comprising", "having", "containing", or variants thereof with Shi Yau head were pregnant or Schwann formula in terms of the claims, such terms are intended to be similar to the operation Patent ji comprises a knife JVEi . _1]综上麗,虽然本发配以㈣实謝__上{日上述鶴嫌響非饰,因此本发明的保护麵以权利要求界定的范围为准。 _1] Li summary, although the present invention together with the __ {too loud, Crane (iv) above the non-solid decorative Xie, thereby protecting the surface of the present invention in the claims define the scope of equivalents. 神和犯围内,均可作各种更动与润 God within and around the guilty, can make various modifications and Run

Claims (6)

  1. 1.一种薄膜晶体管阵列基板的制作方法,其特征在于,所述方法包括以下步骤: A、 在基板上设置缓冲层和非晶硅层,其中,所述缓冲层位于所述基板上,所述非晶硅层位于所述缓冲层上,所述非晶硅层是由非晶硅材料形成的材料层; B、 利用紫外光照射所述非晶硅层,以使所述非晶硅层中的硅-氢键断裂,照射时间为第一预定时间; C、 利用红外线光对经过所述紫外光照射后的所述非晶硅层进行加热,以使所述非晶硅层中的氢从所述非晶硅层中脱离,加热时间为第二预定时间; D、 对经过加热后的所述非晶硅层进行清洗; E、 利用激光将清洗后的所述非晶硅层进行退火结晶处理,以形成多晶硅层;以及F、 在所述多晶硅层上和/或所述缓冲层上设置显示器件,以形成薄膜晶体管阵列基板, 其中,所述显示器件至少包括信号线、像素电极; 所述第二 1. A method for manufacturing a thin film transistor array substrate, wherein the method comprises the steps of: A, a buffer layer and an amorphous silicon layer on a substrate, wherein the buffer layer on the substrate, the said amorphous silicon layer located on the buffer layer, the amorphous silicon layer is a material layer formed of amorphous silicon material; B, the amorphous silicon layer is irradiated with ultraviolet light, so that the amorphous silicon layer silicon - hydrogen bonds, the irradiation time is a first predetermined time; C, using infrared light to the amorphous silicon layer through ultraviolet irradiation after the heating, so that hydrogen in the amorphous silicon layer departing from the amorphous silicon layer, the heating time is a second predetermined time; D, after heating of the amorphous silicon layer washed; E, the amorphous silicon layer using a laser annealing is performed after the washing crystallized to form a polysilicon layer; F., a display device disposed on said polysilicon layer and / or on the buffer layer to form a thin film transistor array substrate, wherein the display device comprises at least a signal line, a pixel electrode; The second 定时间处于1分钟至20分钟的范围内; 经过所述红外线光照射后的所述非晶硅层的温度处于预定温度范围内,所述预定温度范围为300摄氏度至400摄氏度。 In a given time range of 1 minute to 20 minutes; the temperature of the infrared ray passing through the amorphous silicon layer after light irradiation is within a predetermined temperature range, the predetermined temperature range of 300 degrees Celsius to 400 degrees Celsius.
  2. 2. 根据权利要求1所述的薄膜晶体管阵列基板的制作方法,其特征在于,所述第一预定时间处于20秒至300秒的范围内。 2. The method for manufacturing a thin film transistor array substrate according to claim 1, wherein said first predetermined time is in the range of 20 to 300 seconds.
  3. 3. 根据权利要求1所述的薄膜晶体管阵列基板的制作方法,其特征在于,经过加热后的所述非晶硅层中的氢含量小于或等于1.0%。 3. The thin-film forming method of the array substrate of the transistor according to claim 1, characterized in that, after the hydrogen content of the amorphous silicon layer after heating is less than or equal to 1.0%.
  4. 4. 一种多晶硅材料的制作方法,其特征在于,所述方法包括以下步骤: A、 利用紫外光照射非晶硅材料,以使所述非晶硅材料中的硅-氢键断裂,照射时间为第一预定时间; B、 利用红外线光对经过所述紫外光照射后的所述非晶硅材料进行加热,以使所述非晶硅材料中的氢从所述非晶硅材料中脱离,加热时间为第二预定时间; C、 对经过加热后的所述非晶硅材料进行清洗;以及D、 利用激光将清洗后的所述非晶硅材料进行退火结晶处理,以形成多晶硅材料; 所述第二预定时间处于1分钟至2〇分钟的范围内; 经过所述红外线光照射后的所述非晶硅层的温度处于预定温度范围内,所述预定温度范围为300摄氏度至400摄氏度。 4. A method for fabricating a polysilicon material, characterized in that the method comprises the steps of: A, an amorphous silicon material is irradiated with ultraviolet light, so that the amorphous material is silicon - hydrogen bonds, irradiation time a first predetermined time; B, using infrared light passes through the heating of the amorphous material after the irradiation of the ultraviolet light, so that the amorphous material from the release of hydrogen in the amorphous silicon material, the heating time for the second predetermined time; C, the heated amorphous material after washing; and D, the amorphous silicon material using a laser annealing crystallization after the washing process to form a polysilicon material; the said second predetermined time is in the range of 1 minute to 2〇 minutes; the temperature of the infrared ray passing through the amorphous silicon layer after light irradiation is within a predetermined temperature range, the predetermined temperature range of 300 degrees Celsius to 400 degrees Celsius.
  5. 5. 根据权利要求4所述的多晶硅材料的制作方法,其特征在于,所述第一预定时间处于20秒至300秒的范围内。 The production method according to claim polysilicon material, wherein said first predetermined time is in the range of 20 to 300 seconds.
  6. 6. 根据权利要求4所述的多晶硅材料的制作方法,其特征在于,经过加热后的所述非晶硅层中的氢含量小于或等于1.〇%。 6. A method for fabricating a polysilicon material as claimed in claim 4, characterized in that, after the hydrogen content of the amorphous silicon layer after heating is less than or equal 1.〇%.
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