CN105088158A - Silver-aluminum alloy crystal oscillation wafer coating process - Google Patents
Silver-aluminum alloy crystal oscillation wafer coating process Download PDFInfo
- Publication number
- CN105088158A CN105088158A CN201510469592.6A CN201510469592A CN105088158A CN 105088158 A CN105088158 A CN 105088158A CN 201510469592 A CN201510469592 A CN 201510469592A CN 105088158 A CN105088158 A CN 105088158A
- Authority
- CN
- China
- Prior art keywords
- silver
- quartz plate
- aluminium
- film
- aerdentalloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000000576 coating method Methods 0.000 title claims abstract description 30
- 229910000838 Al alloy Inorganic materials 0.000 title abstract description 12
- -1 Silver-aluminum Chemical compound 0.000 title abstract description 9
- 239000013078 crystal Substances 0.000 title abstract 4
- 230000010355 oscillation Effects 0.000 title abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 49
- 239000010453 quartz Substances 0.000 claims abstract description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000004411 aluminium Substances 0.000 claims description 47
- 238000004544 sputter deposition Methods 0.000 claims description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 abstract description 19
- 239000004332 silver Substances 0.000 abstract description 19
- 238000000034 method Methods 0.000 abstract description 11
- 230000005855 radiation Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 10
- 239000000956 alloy Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000005267 amalgamation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000012946 outsourcing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a silver-aluminum alloy crystal oscillation wafer coating process, a silver-aluminum alloy film formed on a quartz plate through the process can be firmly combined with the quartz plate, a proportion of silver and aluminum components in the silver-aluminum alloy film can be precisely controlled, therefore, various performances of the final finished product silver-aluminum alloy crystal oscillation wafer can achieve the desired setting on the basis of meeting basic use requirements, and the silver-aluminum alloy crystal oscillation wafer has desired radiation, conductivity, smaller impedance and hardness.
Description
Technical field
The present invention relates to a kind of coating process, particularly a kind of alloy coating technique of aerdentalloy crystal-vibration-chip.
Background technology
Quartz plate plates metal conductive film layer, as material mainly gold and silver, aluminium and the copper of metallic conduction rete, the crystal-vibration-chip making conductive layer with aluminium has best resistance to stress effect, but this material of aluminium is too soft, easy scratch and oxidation, and contrasting gold and silver and copper, the impedance of aluminium is large, and its electric conductivity and thermal conductivity are all lower.
Adopt aerdentalloy both to improve the resistance to stress effect of crystal-vibration-chip, overcome again aluminium crystal-vibration-chip middle impedance comparatively large, the deficiency that specific conductivity and thermal conductivity are all lower,
Traditional aerdentalloy coating process silver and aluminium is placed in molybdenum boat or crucible by a certain percentage to heat in vacuum environment evaporation on quartz plate, detailed process is as follows: during evaporation, above fixture quartz plate being placed in vacuum chamber, by weight ratio silver, aluminum alloy materials are positioned on boat or crucible; Silver, the boat of aluminum alloy materials or crucible are placed in heating under vacuum conditions, and after one side silver, aluminum alloy materials being plated in quartz plate forms alloy film, turnover fixture, adopts and silver, aluminum alloy materials are plating on the another side of quartz plate in a like fashion.In above-mentioned evaporate process, silver, aluminum evaporation component proportions are out difficult to control, and the silver thus on quartz plate, the content of aluminium alloy do not reach preset value than often, thus cause silver, requirement that the performance of aluminium alloy does not reach needs.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides a kind of alloy coating technique of aerdentalloy crystal-vibration-chip, accurately can control the component proportions of silver and aluminium in aerdentalloy film.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of aerdentalloy crystal-vibration-chip coating process, is characterized in that: comprise the following steps:
Step one, prepares aluminium target, silver-colored material target and needs the quartz plate of plated film,
Step 2, aluminium target, silver-colored material target and quartz plate are positioned in magnetic-controlled sputtering coating equipment, plated film work area in described magnetic-controlled sputtering coating equipment is filled with high purity argon, and this magnetic-controlled sputtering coating equipment comprises the ion launcher for launching high energy particle and the transport unit for mobile quartz plate
Step 3, starts magnetic-controlled sputtering coating equipment, is launched the bombardment of high energy particle by ion launcher, makes aluminium target sputtering occur and make aluminium atomic deposition on quartz plate, and on quartz plate, plates the aluminium film that a layer thickness is D,
Step 4, after aluminium film is plated to certain thickness, ion launcher stops launching, and by transport unit, quartz plate is moved to the working position relative with silver-colored material target, and keeps the temperature of quartz plate to be that a certain scope can not cool,
Step 5, launches high-energy particle bombardment by ion launcher, and make silver-colored material target that sputtering occur and silver atoms be deposited on to merge above aluminium film and with aluminium film to form uniform aerdentalloy film, the thickness of aerdentalloy film is H, and D/(H-D)=X,
Step 6, takes out finished product detection warehouse-in.
The both sides of described quartz plate are provided with ion launcher, aluminium target and silver-colored material target, thus can plate aerdentalloy film in the both sides of quartz plate after startup magnetic-controlled sputtering coating equipment simultaneously.
Temperature in described step 4 is: 200-550 degree.
In described step 5, the scope of X is: 5-20,
The invention has the beneficial effects as follows: the aerdentalloy film formed on quartz plate by this technique is not only combined with quartz plate firmly, and accurately can control the component proportions of silver and aluminium in aerdentalloy film, thus, the properties of final finished aerdentalloy crystal-vibration-chip is on the basis meeting basic service requirements, the setting required for us can be reached, there is the thermal diffusivity required for us, electroconductibility, less impedance and hardness.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 is the structural representation of aerdentalloy crystal-vibration-chip of the present invention wherein a kind of product.
Embodiment
With reference to Fig. 1, the invention discloses a kind of aerdentalloy crystal-vibration-chip coating process, comprise the following steps:
Step one, prepare aluminium target, silver-colored material target and need the quartz plate of plated film, in this technique, aluminium target and silver-colored material target must be all the materials of fine aluminium or fine silver, and hybrid metal can not as target,
Step 2, by aluminium target, silver material target and quartz plate are positioned in magnetic-controlled sputtering coating equipment, plated film work area in described magnetic-controlled sputtering coating equipment is filled with high purity argon, and this magnetic-controlled sputtering coating equipment comprises the ion launcher for launching high energy particle and the transport unit for mobile quartz plate, magnetic-controlled sputtering coating equipment is outsourcing device, this does not describe its structure in detail again, but the both sides of described quartz plate are provided with ion launcher, aluminium target and silver-colored material target, thus aerdentalloy film can be plated in the both sides of quartz plate after startup magnetic-controlled sputtering coating equipment simultaneously, such plated film efficiency is higher.
The principle of work of this equipment is: high energy particle is electronics, under the effect of electric field, collides in the process flown out with ar atmo, makes it ionize and produces argon ion and new electronics; Argon ion accelerates to fly to cathode target under electric field action, and in this example, cathode target is aluminium target and silver-colored material target, and with high-energy bombardment target surface, target is sputtered.In sputtering particle, neutral target atom is deposited on quartz plate and forms film, and the secondary electron produced can be subject to Electric and magnetic fields effect, be bound in the heating region on target surface, and ionize a large amount of argon ions in this region and bombard target, thus achieve sedimentation rate at a high speed.Along with the increase of collision frequency, the energy expenditure of secondary electron totally, gradually away from target surface, and be finally deposited on quartz plate under the effect of electric field, because the energy of this electronics is very low, the energy passing to quartz plate is very little, causes quartz plate temperature rise lower, thus can not cause the aluminium that fusing point is lower on quartz plate, form molten hole.
Step 3, start magnetic-controlled sputtering coating equipment, the bombardment of high energy particle is launched by ion launcher, aluminium target is made sputtering to occur and make aluminium atomic deposition on quartz plate, first on quartz plate, plate the aluminium film that a layer thickness is D, in this example, must first aluminium plating film on quartz plate, because the bonding force on aluminium and quartz plate surface is best
Step 4, after aluminium film is plated to certain thickness, ion launcher stops launching, by transport unit, quartz plate is moved to the working position relative with silver-colored material target, and keep the temperature of quartz plate to be that a certain scope can not cool, this temperature is 200-550 degree, in this temperature range, silver has amalgamation good with aluminium film, thus can form uniform aerdentalloy film in subsequent steps
Step 5, high-energy particle bombardment is launched by ion launcher, make silver-colored material target that sputtering occur and silver atoms be deposited on to merge above aluminium film and with aluminium film to form uniform aerdentalloy film, the thickness of aerdentalloy film is H, and D/(H-D)=X, the scope of X is: 5-20, the value direct representation of above-mentioned X be the ratio increasing thickness in aluminium thickness and step 5, this increase thickness is H-D, and this increase thickness forms because of the silver atoms deposition sputtered from silver-colored material target, because the area of plated film is constant, thus X value illustrates in fact aluminium and the component proportions of silver in aerdentalloy film, and this component proportions is the key factor of the performance determining this aerdentalloy film, under this ratio, both basic service requirements had been met, ensure that again the properties of aerdentalloy crystal-vibration-chip can reach the setting of our needs, tool thermal diffusivity in need, electroconductibility, less impedance, and hardness, if the ratio of silver is too low, certainly thermal diffusivity is not reached, electroconductibility, less impedance, and there is the basic demand of certain hardness, and easily impression or scratch is played in detection and use procedure, if the ratio of silver is too high, not only cost is high, and excessive silver can not evenly incorporate aluminium film after on aluminium film and can form silver-colored spot at aluminium film surface being splashed to, and thus affects the outward appearance of whole product.
Step 6, takes out finished product detection warehouse-in.
Above to the alloy coating technique of a kind of aerdentalloy crystal-vibration-chip that the embodiment of the present invention provides, be described in detail, apply specific case herein to set forth principle of the present invention and embodiment, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (4)
1. an aerdentalloy crystal-vibration-chip coating process, is characterized in that: comprise the following steps:
Step one, prepares aluminium target, silver-colored material target and needs the quartz plate of plated film,
Step 2, aluminium target, silver-colored material target and quartz plate are positioned in magnetic-controlled sputtering coating equipment, plated film work area in described magnetic-controlled sputtering coating equipment is filled with high purity argon, and this magnetic-controlled sputtering coating equipment comprises the ion launcher for launching high energy particle and the transport unit for mobile quartz plate
Step 3, starts magnetic-controlled sputtering coating equipment, is launched the bombardment of high energy particle by ion launcher, makes aluminium target sputtering occur and make aluminium atomic deposition on quartz plate, and on quartz plate, plates the aluminium film that a layer thickness is D,
Step 4, after aluminium film is plated to certain thickness, ion launcher stops launching, and by transport unit, quartz plate is moved to the working position relative with silver-colored material target, and keeps the temperature of quartz plate to be that a certain scope can not cool,
Step 5, launches high-energy particle bombardment by ion launcher, and make silver-colored material target that sputtering occur and silver atoms be deposited on to merge above aluminium film and with aluminium film to form uniform aerdentalloy film, the thickness of aerdentalloy film is H, and D/(H-D)=X,
Step 6, takes out finished product detection warehouse-in.
2. a kind of aerdentalloy crystal-vibration-chip coating process according to claim 1, is characterized in that: the scope of described X is: 5-20.
3. a kind of aerdentalloy crystal-vibration-chip coating process according to claim 1, it is characterized in that: the both sides of described quartz plate are provided with ion launcher, aluminium target and silver-colored material target, thus aerdentalloy film can be plated in the both sides of quartz plate simultaneously after startup magnetic-controlled sputtering coating equipment.
4. a kind of aerdentalloy crystal-vibration-chip coating process according to claim 1, is characterized in that: the temperature in described step 4 is: 200-550 degree.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510469592.6A CN105088158A (en) | 2015-08-04 | 2015-08-04 | Silver-aluminum alloy crystal oscillation wafer coating process |
| PCT/CN2016/000421 WO2017020534A1 (en) | 2015-08-04 | 2016-08-01 | Silver/aluminium alloy crystal oscillation plate coating process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510469592.6A CN105088158A (en) | 2015-08-04 | 2015-08-04 | Silver-aluminum alloy crystal oscillation wafer coating process |
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| Publication Number | Publication Date |
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| CN105088158A true CN105088158A (en) | 2015-11-25 |
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| CN201510469592.6A Pending CN105088158A (en) | 2015-08-04 | 2015-08-04 | Silver-aluminum alloy crystal oscillation wafer coating process |
Country Status (2)
| Country | Link |
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| CN (1) | CN105088158A (en) |
| WO (1) | WO2017020534A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017020534A1 (en) * | 2015-08-04 | 2017-02-09 | 中山泰维电子有限公司 | Silver/aluminium alloy crystal oscillation plate coating process |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230323524A1 (en) * | 2022-04-07 | 2023-10-12 | Cantech Inc. | Quartz crystal sensor coated with gold-aluminum by magnetron sputtering |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1811010A (en) * | 2005-01-27 | 2006-08-02 | 中华映管股份有限公司 | Magnetically controlled sputtering process |
| CN103334079A (en) * | 2013-06-25 | 2013-10-02 | 苏州奕光薄膜科技有限公司 | Coating process of electronic device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011066655A (en) * | 2009-09-17 | 2011-03-31 | Kyocera Kinseki Corp | Crystal vibrating element |
| JP5471928B2 (en) * | 2010-07-16 | 2014-04-16 | 株式会社大真空 | Crystal vibration device |
| JP2012093584A (en) * | 2010-10-27 | 2012-05-17 | Toyota Central R&D Labs Inc | Optical coupler, optical scanner and spectrometer |
| CN102088274A (en) * | 2010-12-08 | 2011-06-08 | 郑州原创电子科技有限公司 | Production method of high-fundamental frequency crystal resonator |
| CN201869177U (en) * | 2010-12-08 | 2011-06-15 | 郑州原创电子科技有限公司 | High fundamental frequency crystal resonator |
| CN103824790A (en) * | 2014-02-17 | 2014-05-28 | 上海理工大学 | Ion beam etching depth monitoring method |
| CN104022753A (en) * | 2014-06-19 | 2014-09-03 | 苏州普京真空技术有限公司 | Bi-metal crystal oscillation wafer |
| CN104022754A (en) * | 2014-06-19 | 2014-09-03 | 苏州普京真空技术有限公司 | Novel quartz crystal oscillator |
| CN105088158A (en) * | 2015-08-04 | 2015-11-25 | 中山泰维电子有限公司 | Silver-aluminum alloy crystal oscillation wafer coating process |
-
2015
- 2015-08-04 CN CN201510469592.6A patent/CN105088158A/en active Pending
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2016
- 2016-08-01 WO PCT/CN2016/000421 patent/WO2017020534A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1811010A (en) * | 2005-01-27 | 2006-08-02 | 中华映管股份有限公司 | Magnetically controlled sputtering process |
| CN103334079A (en) * | 2013-06-25 | 2013-10-02 | 苏州奕光薄膜科技有限公司 | Coating process of electronic device |
Non-Patent Citations (1)
| Title |
|---|
| 王振林,杨惠: "AZ31镁合金磁控溅射镀铝膜的性能研究", <<轻合金加工技术>> * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017020534A1 (en) * | 2015-08-04 | 2017-02-09 | 中山泰维电子有限公司 | Silver/aluminium alloy crystal oscillation plate coating process |
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| WO2017020534A1 (en) | 2017-02-09 |
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Application publication date: 20151125 |