CN105088140A - Copper aluminum alloy crystal oscillator chip coating process - Google Patents
Copper aluminum alloy crystal oscillator chip coating process Download PDFInfo
- Publication number
- CN105088140A CN105088140A CN201510469620.4A CN201510469620A CN105088140A CN 105088140 A CN105088140 A CN 105088140A CN 201510469620 A CN201510469620 A CN 201510469620A CN 105088140 A CN105088140 A CN 105088140A
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- Prior art keywords
- aluminium
- quartz plate
- film
- copper
- target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an alloy coating process of a copper aluminum alloy crystal oscillator chip; a copper aluminum alloy film formed on a quartz plate through the process is firmly combined with the quartz plate, and the copper and aluminum component ratio in the copper aluminum alloy film can be precisely controlled, so that all performances of the finally finished copper aluminum alloy crystal oscillator chip can achieve needed settings on the basis of satisfying basic use requirements; and the copper aluminum alloy crystal oscillator chip has needed cooling capacity, electrical conductivity, lower impedance and hardness.
Description
Technical field
The present invention relates to a kind of coating process, particularly a kind of alloy coating technique of X alloy crystal-vibration-chip.
Background technology
Quartz plate plates metal conductive film layer, as material mainly gold and silver, aluminium and the copper of metallic conduction rete, the crystal-vibration-chip making conductive layer with aluminium has best resistance to stress effect, but this material of aluminium is too soft, easy scratch and oxidation, and contrasting gold and silver and copper, the impedance of aluminium is large, and its electric conductivity and thermal conductivity are all lower.
Adopt X alloy both to improve the resistance to stress effect of crystal-vibration-chip, overcome again aluminium crystal-vibration-chip middle impedance comparatively large, the deficiency that specific conductivity and thermal conductivity are all lower,
Traditional X alloy coating process copper and aluminium is placed in molybdenum boat or crucible by a certain percentage to heat in vacuum environment evaporation on quartz plate, detailed process is as follows: during evaporation, above fixture quartz plate being placed in vacuum chamber, by weight ratio copper, aluminum alloy materials are positioned on boat or crucible; Copper, the boat of aluminum alloy materials or crucible are placed in heating under vacuum conditions, and after one side copper, aluminum alloy materials being plated in quartz plate forms alloy film, turnover fixture, adopts and copper, aluminum alloy materials are plating on the another side of quartz plate in a like fashion.In above-mentioned evaporate process, copper, aluminum evaporation component proportions is out difficult to control, and the copper thus on quartz plate, the content of aluminium alloy do not reach preset value than often, thus cause copper, requirement that the performance of aluminium alloy does not reach needs.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides a kind of alloy coating technique of X alloy crystal-vibration-chip, accurately can control the component proportions of copper and aluminium in X alloy film.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of X alloy crystal-vibration-chip coating process, is characterized in that: comprise the following steps:
Step one, prepares aluminium target, copper material target and needs the quartz plate of plated film,
Step 2, aluminium target, copper material target and quartz plate are positioned in magnetic-controlled sputtering coating equipment, plated film work area in described magnetic-controlled sputtering coating equipment is filled with high purity argon, and this magnetic-controlled sputtering coating equipment comprises the ion launcher for launching high energy particle and the transport unit for mobile quartz plate
Step 3, starts magnetic-controlled sputtering coating equipment, is launched the bombardment of high energy particle by ion launcher, makes aluminium target sputtering occur and make aluminium atomic deposition on quartz plate, and on quartz plate, plates the aluminium film that a layer thickness is D,
Step 4, after aluminium film is plated to certain thickness, ion launcher stops launching, and by transport unit, quartz plate is moved to the working position relative with copper material target, and keeps the temperature of quartz plate to be that a certain scope can not cool,
Step 5, launches high-energy particle bombardment by ion launcher, and make copper material target that sputtering occur and copper atom be deposited on to merge above aluminium film and with aluminium film to form uniform X alloy film, the thickness of X alloy film is H, and D/(H-D)=X,
Step 6, takes out finished product detection warehouse-in.
The both sides of described quartz plate are provided with ion launcher, aluminium target and copper material target, thus can simultaneously at the both sides plated with copper aluminium alloy film of quartz plate after starting magnetic-controlled sputtering coating equipment.
Temperature in described step 4 is: 200-550 degree.
In described step 5, the scope of X is: 5-20,
The invention has the beneficial effects as follows: the X alloy film formed on quartz plate by this technique is not only combined with quartz plate firmly, and accurately can control the component proportions of copper and aluminium in X alloy film, thus, the properties of final finished X alloy crystal-vibration-chip is on the basis meeting basic service requirements, the setting required for us can be reached, there is the thermal diffusivity required for us, electroconductibility, less impedance and hardness.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 is the schematic diagram of wherein a kind of product of X alloy crystal-vibration-chip of the present invention.
Embodiment
With reference to Fig. 1, the invention discloses a kind of X alloy crystal-vibration-chip coating process, comprise the following steps:
Step one, prepare aluminium target, copper material target and need the quartz plate of plated film, in this technique, aluminium target and copper material target must be all the materials of fine aluminium or fine copper, and hybrid metal can not as target,
Step 2, by aluminium target, copper material target and quartz plate are positioned in magnetic-controlled sputtering coating equipment, plated film work area in described magnetic-controlled sputtering coating equipment is filled with high purity argon, and this magnetic-controlled sputtering coating equipment comprises the ion launcher for launching high energy particle and the transport unit for mobile quartz plate, magnetic-controlled sputtering coating equipment is outsourcing device, this does not describe its structure in detail again, but the both sides of described quartz plate are provided with ion launcher, aluminium target and copper material target, thus can simultaneously at the both sides plated with copper aluminium alloy film of quartz plate after starting magnetic-controlled sputtering coating equipment, such plated film efficiency is higher.
The principle of work of this equipment is: high energy particle is electronics, under the effect of electric field, collides in the process flown out with ar atmo, makes it ionize and produces argon ion and new electronics; Argon ion accelerates to fly to cathode target under electric field action, and in this example, cathode target is aluminium target and copper material target, and with high-energy bombardment target surface, target is sputtered.In sputtering particle, neutral target atom is deposited on quartz plate and forms film, and the secondary electron produced can be subject to Electric and magnetic fields effect, be bound in the heating region on target surface, and ionize a large amount of argon ions in this region and bombard target, thus achieve sedimentation rate at a high speed.Along with the increase of collision frequency, the energy expenditure of secondary electron totally, gradually away from target surface, and be finally deposited on quartz plate under the effect of electric field, because the energy of this electronics is very low, the energy passing to quartz plate is very little, causes quartz plate temperature rise lower, thus can not cause the aluminium that fusing point is lower on quartz plate, form molten hole.
Step 3, start magnetic-controlled sputtering coating equipment, the bombardment of high energy particle is launched by ion launcher, aluminium target is made sputtering to occur and make aluminium atomic deposition on quartz plate, first on quartz plate, plate the aluminium film that a layer thickness is D, in this example, must first aluminium plating film on quartz plate, because the bonding force on aluminium and quartz plate surface is best
Step 4, after aluminium film is plated to certain thickness, ion launcher stops launching, and by transport unit, quartz plate is moved to the working position relative with copper material target, and keeps the temperature of quartz plate to be that a certain scope can not cool, this temperature is 200-550 degree, in this temperature range, copper has amalgamation good with aluminium film, and copper atom can incorporate in aluminium film very well, thus uniform X alloy film can be formed in subsequent steps
Step 5, high-energy particle bombardment is launched by ion launcher, make copper material target that sputtering occur and copper atom be deposited on to merge above aluminium film and with aluminium film to form uniform X alloy film, the thickness of X alloy film is H, and D/(H-D)=X, the scope of X is: 5-20, the value direct representation of above-mentioned X be the ratio increasing thickness in aluminium thickness and step 5, this increase thickness is H-D, and this increase thickness forms because of the copper atom deposition sputtered from copper material target, because the area of plated film is constant, thus X value illustrates in fact aluminium and the component proportions of copper in X alloy film, and this component proportions is the key factor of the performance determining this X alloy film, under this ratio, both basic service requirements had been met, ensure that again the properties of X alloy crystal-vibration-chip can reach the setting of our needs, tool thermal diffusivity in need, electroconductibility, less impedance, and hardness, if the ratio of copper is too low, certainly thermal diffusivity is not reached, electroconductibility, less impedance, and there is the basic demand of certain hardness, and easily impression or scratch is played in detection and use procedure, if the ratio of copper is too high, not only cost is high, and excessive copper can not evenly incorporate aluminium film after on aluminium film and can form copper stain at aluminium film surface being splashed to, and thus affects the outward appearance of whole product.
Step 6, takes out finished product detection warehouse-in.
Above to the alloy coating technique of a kind of X alloy crystal-vibration-chip that the embodiment of the present invention provides, be described in detail, apply specific case herein to set forth principle of the present invention and embodiment, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (4)
1. kind of X alloy crystal-vibration-chip coating process, is characterized in that: comprise the following steps:
Step one, prepares aluminium target, copper material target and needs the quartz plate of plated film,
Step 2, aluminium target, copper material target and quartz plate are positioned in magnetic-controlled sputtering coating equipment, plated film work area in described magnetic-controlled sputtering coating equipment is filled with high purity argon, and this magnetic-controlled sputtering coating equipment comprises the ion launcher for launching high energy particle and the transport unit for mobile quartz plate
Step 3, starts magnetic-controlled sputtering coating equipment, is launched the bombardment of high energy particle by ion launcher, makes aluminium target sputtering occur and make aluminium atomic deposition on quartz plate, and on quartz plate, plates the aluminium film that a layer thickness is D,
Step 4, after aluminium film is plated to certain thickness, ion launcher stops launching, and by transport unit, quartz plate is moved to the working position relative with copper material target, and keeps the temperature of quartz plate to be that a certain scope can not cool,
Step 5, launches high-energy particle bombardment by ion launcher, and make copper material target that sputtering occur and copper atom be deposited on to merge above aluminium film and with aluminium film to form uniform X alloy film, the thickness of X alloy film is H, and D/(H-D)=X,
Step 6, takes out finished product detection warehouse-in.
2. a kind of X alloy crystal-vibration-chip coating process according to claim 1, is characterized in that: in described step 5, the scope of X is: 5-20.
3. a kind of X alloy crystal-vibration-chip coating process according to claim 1, it is characterized in that: the both sides of described quartz plate are provided with ion launcher, aluminium target and copper material target, thus can simultaneously at the both sides plated with copper aluminium alloy film of quartz plate after starting magnetic-controlled sputtering coating equipment.
4. a kind of X alloy crystal-vibration-chip coating process according to claim 1, is characterized in that: the temperature in described step 4 is: 200-550 degree.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510469620.4A CN105088140A (en) | 2015-08-04 | 2015-08-04 | Copper aluminum alloy crystal oscillator chip coating process |
| PCT/CN2016/000422 WO2017020535A1 (en) | 2015-08-04 | 2016-08-01 | Copper/aluminium alloy crystal oscillation plate coating process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510469620.4A CN105088140A (en) | 2015-08-04 | 2015-08-04 | Copper aluminum alloy crystal oscillator chip coating process |
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| CN105088140A true CN105088140A (en) | 2015-11-25 |
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| CN201510469620.4A Pending CN105088140A (en) | 2015-08-04 | 2015-08-04 | Copper aluminum alloy crystal oscillator chip coating process |
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| CN (1) | CN105088140A (en) |
| WO (1) | WO2017020535A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017020535A1 (en) * | 2015-08-04 | 2017-02-09 | 中山泰维电子有限公司 | Copper/aluminium alloy crystal oscillation plate coating process |
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| CN113471034B (en) * | 2021-05-29 | 2023-11-14 | 南京三乐集团有限公司 | Preparation method of magnesium oxide secondary emitter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1811010A (en) * | 2005-01-27 | 2006-08-02 | 中华映管股份有限公司 | Magnetically controlled sputtering process |
| CN103334079A (en) * | 2013-06-25 | 2013-10-02 | 苏州奕光薄膜科技有限公司 | Coating process of electronic device |
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| US20020110700A1 (en) * | 2001-02-12 | 2002-08-15 | Hein Gerald F. | Process for forming decorative films and resulting products |
| CN101244898B (en) * | 2008-01-25 | 2011-05-11 | 东莞南玻工程玻璃有限公司 | Golden low radiation film coating glass and manufacturing method thereof |
| CN101363110A (en) * | 2008-09-24 | 2009-02-11 | 四川大学 | Physical vapor-phase preparation method of c-sic coating for hydrogen (tritium) resistance |
| CN101736302B (en) * | 2009-12-18 | 2012-07-04 | 西安交通大学 | Preparation method of homogeneous multilayer nanometer metallic film material |
| CN103360122B (en) * | 2013-06-21 | 2014-11-05 | 西南交通大学 | Method for improving metalized surface performance of ceramic workpiece |
| CN105088140A (en) * | 2015-08-04 | 2015-11-25 | 中山泰维电子有限公司 | Copper aluminum alloy crystal oscillator chip coating process |
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2015
- 2015-08-04 CN CN201510469620.4A patent/CN105088140A/en active Pending
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- 2016-08-01 WO PCT/CN2016/000422 patent/WO2017020535A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1811010A (en) * | 2005-01-27 | 2006-08-02 | 中华映管股份有限公司 | Magnetically controlled sputtering process |
| CN103334079A (en) * | 2013-06-25 | 2013-10-02 | 苏州奕光薄膜科技有限公司 | Coating process of electronic device |
Non-Patent Citations (1)
| Title |
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| 王振林,杨惠: "AZ31镁合金磁控溅射镀铝膜的性能研究", <<轻合金加工技术>> * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017020535A1 (en) * | 2015-08-04 | 2017-02-09 | 中山泰维电子有限公司 | Copper/aluminium alloy crystal oscillation plate coating process |
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| WO2017020535A1 (en) | 2017-02-09 |
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Application publication date: 20151125 |
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