CN101570852B - Cathode for sputtering coating - Google Patents
Cathode for sputtering coating Download PDFInfo
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- CN101570852B CN101570852B CN2009100270438A CN200910027043A CN101570852B CN 101570852 B CN101570852 B CN 101570852B CN 2009100270438 A CN2009100270438 A CN 2009100270438A CN 200910027043 A CN200910027043 A CN 200910027043A CN 101570852 B CN101570852 B CN 101570852B
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Abstract
The invention discloses a cathode for sputtering coating, which comprises a target, a cathode assembly internally provided with a cavity, and a magnet, wherein the magnet is positioned in the cavity of the cathode assembly. The cathode is characterized in that one magnetic pole of the magnet faces to the direction of the target, while the other magnetic pole backs to the direction of the target; the end face of the magnetic pole of the magnet facing to the direction of the target is a concave curved surface; the target is positioned in a magnetic field generated by the magnet; and the direction of the magnetic field is vertical to the surface of the target. By adopting the cathode for plane sputtering coating, a magnetic target and a non-magnetic target can obtain higher sputtering rate, and simultaneously the target can be etched evenly on the whole, the utilization rate of the target can be improved to be between 85 and 90 percent or more, and the cathode is advantageous for the crystal growth of a film and the preparation of a high-quality film; besides, the cathode for the sputtering coating has a simple structure, not only can be applied to designing and manufacturing a novel sputtering coating system, but also can be conveniently applied to transforming the prior cathode for the sputtering coating so as to improve the performance and the efficiency of the coating system.
Description
Technical field
The present invention relates to a kind of preparation facilities of thin-film material, be specifically related to a kind of auxiliary cathode construction of realizing sputter coating in magnetic field that is used for.
Background technology
In the time of in d.c. sputtering or the radio-frequency sputtering coating process, the electronics and the ar atmo of flight bump, and ionization goes out a large amount of argon ions and secondary electron.Wherein, argon ion quickens under effect of electric field, bombards target, sputters a large amount of target atom, and neutral target atom (or molecule) is deposited on and forms film on the substrate.The magnetron sputtering basic device improves electrode structure and forms on these sputter equipment bases, shown in accompanying drawing 1, planar magnetic control sputtering cathode of the prior art be utilize be placed on negative electrode inside be " mountain " font magnet N and near the part zone of S utmost point target material surface produces a non-homogeneous transverse magnetic field that is parallel to the surface, secondary electron is subjected to the effect of this transverse magnetic field in flying to the process of substrate, be bound near in the plasma body zone of target surface and do cyclotron motion, prolong electronics greatly and arrived the anodic stroke, making in this trip with the ar atmo ionized probability that bumps increases, the concentration of the positive ion of bombardment target also thereby increase, thereby improved the speed of sputter coating.Add that solid materials such as nearly all metal, alloy, semi-conductor and pottery can carry out plated film as target, magnetron sputtering technology has become and has been widely used in scientific research and large-area coating film production every field.But existing planar magnetic control sputtering cathode also exists some to expect improved distinct disadvantage: the one, and the reason of the magnetic field structure that adopts in the negative electrode, the plasma body of the magnetic field of uneven distribution generation uneven distribution causes the inhomogeneous etching on the target face near the target material surface, the utilization ratio of target has only 25～45%, causes the insufficient of the utilization of resources; The 2nd, the transverse magnetic field on target surface also plays the constraint effect to charged particle, along with the increase of leaving the target surface distance, charged particle concentration reduces rapidly, and major part is that neutral particle just is not subjected to the constraint in magnetic field to fly to the substrate film forming, and these particle activity are strong, be difficult to form high quality thin film; The 3rd, because the magnetic screening action of magnetic target, the plated film speed of magneticsubstance is not high.
For overcoming these shortcomings in the magnetron sputtering membrane process, recent two decades comes, people done various improvement Distribution of Magnetic Field aspect effort.For improving plasma concentration, the non-balance magnetically controlled sputter technology has appearred, promptly adopt asymmetric magnetic pole that the magnetic pole S make among Fig. 1 and magnetic pole N get unequal sectional area or on magnetic structure basis shown in Figure 1 additional solenoid, in order to improve plasma concentration and distributed areas thereof; Be improving target utilization, mainly is to increase in extra magnetic field, the coating process constantly moving magnet position etc. by the structure that changes magnetic circuit in the negative electrode, additional auxiliary electromagnetic coil or magnet, reaches the distribution area and the homogeneity that increase transverse magnetic field on the target face; For improving target utilization and plasma concentration simultaneously, the research experiment sputter coating system of outfit plasma ejecting gun (Plasma Launch System) has been released in the PQL company exploitation of Britain.But all these technology all need additionalamount outer structure or functional unit, and the equipment structure is complicated more, are difficult to the production field of penetration and promotion to large-area coating film.
Summary of the invention
The object of the invention provides a kind of negative electrode that is used for sputter coating, and is low to overcome in the existing magnetron sputtering coating method target utilization, and the problem that is difficult to improve film quality.
For achieving the above object, the technical solution used in the present invention is: a kind of negative electrode that is used for sputter coating, comprise that target, inside are provided with the cathode assembly of cavity, magnet, described magnet is positioned at the cavity of cathode assembly, a magnetic pole of described magnet is towards the target direction, and another magnetic pole target direction dorsad is provided with, and magnet is the curved surface of indent towards the magnetic pole end face of target, make described target be arranged in the magnetic field that is produced by magnet, the direction in magnetic field is perpendicular to target material surface.
In the technique scheme, near the magnetic field distribution target material surface more evenly is advisable.
The invention provides a kind of by auxiliary plane, magnetic field sputtering coated cathode perpendicular to target material surface, promptly be installed in planar targets on this negative electrode and be in the magnetic field that is produced by permanent magnet or electro-magnet, the direction in this magnetic field is perpendicular to target material surface and relatively be evenly distributed in the entire target face.Negative electrode can because of purposes be divided into be used for circular target or be used for rectangle target etc. dissimilar, corresponding magnet shape can adopt right cylinder or flat rectangular parallelepiped respectively, its size is equal to or greater than the length and width of the diameter or the rectangle target of circular target, the upper surface is designed to concave spherical or recessed cylinder shape, utilize how much interfaces to the restriction of Distribution of Magnetic Field, produce one the whole surface arrangement of target relatively uniformly and with the vertical magnetic field of target material surface.The pairing magnetic pole of magnet concave part can be got the N utmost point or the S utmost point according to the material of plated film target, and make even face or curved surface of lower surface all can.
In the technique scheme, when used target was circular, this negative electrode profile was the cylinder bodily form, and described magnet is right cylinder; When the diameter of magnet equals the diameter of target, be inner sunken face towards the magnetic pole end face of target, radius-of-curvature is 0.6 times～3 times of target diameter; Magnet diameter is during greater than the diameter of target, and the radius-of-curvature of magnetic pole end face inner sunken face is greater than 0.6 times of the target diameter.
Perhaps, when used target was rectangular target, this negative electrode profile was a cuboid, and described magnet is flat rectangular parallelepiped; When the width of magnet equals the width of target, be the indent cylinder towards the magnetic pole end face of target, radius-of-curvature is 0.6 times～3 times of target width; The magnet width is during greater than the width of target, and the radius-of-curvature of magnetic pole end face indent cylinder is greater than 0.6 times of target width.
Because the technique scheme utilization, the present invention compared with prior art has following advantage:
1. adopt plane of the present invention sputtering coated cathode, can both obtain higher sputter rate to magnetic and non magnetic target, simultaneously can more whole etching target, the utilization ratio of target can bring up to more than 85～90%, the high density plasma body spreads all over the spatial feature between target and the plating piece (substrate) in addition, helps the crystalline growth of film and the preparation of high quality thin film.
2. sputtering coated cathode of the present invention, simple in structure.Can be used for manufacturing and designing of novel sputter coating system, also can be used for transformation easily, improve the performance and the efficient of coating system existing sputtering coated cathode.
Description of drawings
Fig. 1 is the structural representation of sputtering coated cathode in the prior art;
Fig. 2 is a cathode construction synoptic diagram among the embodiment one.
When Fig. 3 is sputter Cu target, the aura distribution of shapes photo that embodiment one method produces;
Fig. 4 is that embodiment one method and common magnetically controlled sputter method target etching degree compare photo.
Wherein: 1, target; 2, cooling cavity; 3, magnet; 4, cathode assembly; 5, entrance of cooling water; 6, cooling water outlet.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment one: a kind of negative electrode that is used for sputter coating, comprise that target 1, inside are provided with the cathode assembly 4 of cavity, magnet 3, described magnet 3 is positioned at the cavity of cathode assembly 4, a magnetic pole of described magnet 3 is towards the target direction, another magnetic pole target direction dorsad is provided with, magnet 3 is the curved surface of indent towards the magnetic pole end face of target 1, makes described target be arranged in the magnetic field that is produced by magnet, and the direction in magnetic field is perpendicular to target material surface.
Magnet wherein can adopt permanent magnet or electro-magnet, magnet is arranged in the cooling cavity 2 of cathode assembly usually, entrance of cooling water 5 and cooling water outlet 6 are set on the cavity, utilize water-cooled to reduce the temperature of magnet and target, avoid the magnet temperature to surpass Curie temperature and cause losing efficacy.
Described target can be circular target or rectangle target, and correspondingly, described magnet is right cylinder or flat rectangular parallelepiped.When magnet is right cylinder, when its diameter equals the diameter of target, be inner sunken face towards the magnetic pole end face of target, radius-of-curvature is 0.6 times～3 times of target diameter; Magnet diameter is during greater than the diameter of target, and the radius-of-curvature of magnetic pole end face inner sunken face is 0.6 times～infinity of target diameter.When magnet is flat rectangular parallelepiped, when its width equals the width of target, be the indent cylinder towards the magnetic pole end face of target, radius-of-curvature is 0.6 times～3 times of target width; The magnet width is during greater than the width of target, and the radius-of-curvature of magnetic pole end face indent cylinder is 0.6 times～infinity of target width.
Different magnetic structure negative electrodes plasma body aura state when the sputter coating is compared, can show the influence of the distribution of different magnetic structure article on plasma bodies.The result shows that for common magnetic control sputtering cathode, plasma body is near the target material surface of negative electrode; And adopt the negative electrode of present embodiment, the space (as Fig. 3) of plasma distribution between target and substrate, its distributing homogeneity to depend on the size of magnet, the homogeneity of Distribution of Magnetic Field just.
When adopting common magnetron cathode, form tangible annular groove on the target, when the degree of depth of ditch reached target thickness, target was punched, can not be re-used.Therefore, the utilization ratio of target is about 30%.
When adopting the negative electrode of present embodiment, except that edge section, target is (as the Fig. 4) that is used by whole etching basically.The homogeneity of regulating Distribution of Magnetic Field can make the homogeneity of further raising etching depth distribution, and promptly pinwheel reaches unanimity to the etching depth with the edge.
The negative electrode of employing present embodiment can also improve the sedimentation rate of sputter coating.
Adopt the negative electrode and the common planar magnetic control sputtering cathode of present embodiment to compare test, test situation is described below:
The sputter semiconductor silicon film: argon gas operating air pressure 0.5Pa, target and substrate spacing 35mm, the diameter 50mm of magnet, magnetic induction density 3500 Gausses, 70 watts of radio-frequency sputtering power, depositing of thin film speed is 17.5nm/min.And use the common planar magnetron sputtering, sputtering power 70 watt-hour depositing of thin film speed are almost nil.
Splash-proofing sputtering metal aluminium film: argon gas operating air pressure 0.5Pa, target and substrate spacing 35mm, the diameter 50mm of magnet, magnetic induction density 3500 Gausses, radio-frequency sputtering power 200 watt-hour depositing of thin film speed are 42nm/min.And use the common planar magnetron sputtering, the plated film speed of sputtering power 200 watt-hours is only 7.3nm/min.
Splash-proofing sputtering metal copper film: argon gas and nitrogen blending ratio are 8: 1, operating air pressure 0.5Pa, and target and substrate spacing 25mm, the diameter 25mm of magnet, magnetic induction density 4200 Gausses, 150 watts of radio-frequency sputtering power, depositing of thin film speed is 63nm/min.And under similarity condition, use the common planar magnetron sputtering, plated film speed is 32nm/min.
The splash-proofing sputtering metal iron thin film: argon gas operating air pressure 3Pa, target and substrate spacing 25mm, the diameter 25mm of magnet, magnetic induction density 4200 Gausses, 150 watts of radio-frequency sputtering power, depositing of thin film speed is 31nm/min.And under similarity condition, use the common planar magnetron sputtering, plated film speed is 6.2nm/min.
Claims (3)
1. negative electrode that is used for sputter coating, comprise that target, inside are provided with the cathode assembly of cavity, magnet, described target is a planar targets, described magnet is positioned at the cavity of cathode assembly, a magnetic pole of described magnet is towards the target direction, another magnetic pole target direction dorsad is provided with, and it is characterized in that: magnet towards the magnetic pole end face of target be indent curved surface, make described target be arranged in the magnetic field that produces by magnet, the direction in magnetic field is perpendicular to target material surface.
2. the negative electrode that is used for sputter coating according to claim 1 is characterized in that: when used target was circular, this negative electrode profile was the cylinder bodily form, and described magnet is right cylinder; When the diameter of magnet equals the diameter of target, be inner sunken face towards the magnetic pole end face of target, radius-of-curvature is 0.6 times～3 times of target diameter; Magnet diameter is during greater than the diameter of target, and the radius-of-curvature of magnetic pole end face inner sunken face is greater than 0.6 times of the target diameter.
3. the negative electrode that is used for sputter coating according to claim 1 is characterized in that: when used target was rectangular target, this negative electrode profile was a cuboid, and described magnet is flat rectangular parallelepiped; When the width of magnet equals the width of target, be the indent cylinder towards the magnetic pole end face of target, radius-of-curvature is 0.6 times～3 times of target width; The magnet width is during greater than the width of target, and the radius-of-curvature of magnetic pole end face indent cylinder is greater than 0.6 times of target width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100270438A CN101570852B (en) | 2009-05-25 | 2009-05-25 | Cathode for sputtering coating |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100270438A CN101570852B (en) | 2009-05-25 | 2009-05-25 | Cathode for sputtering coating |
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| CN101570852A CN101570852A (en) | 2009-11-04 |
| CN101570852B true CN101570852B (en) | 2011-06-29 |
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| CN2009100270438A Expired - Fee Related CN101570852B (en) | 2009-05-25 | 2009-05-25 | Cathode for sputtering coating |
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| CN102691042B (en) * | 2011-03-24 | 2014-07-23 | 京东方科技集团股份有限公司 | Method and system for manufacture of target material |
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Address after: Suzhou City, Jiangsu province 215137 Xiangcheng District Ji Road No. 8 Patentee after: Soochow University Address before: 215123 Suzhou City, Suzhou Province Industrial Park, No. love road, No. 199 Patentee before: Soochow University |
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