CN103824790A - Ion beam etching depth monitoring method - Google Patents
Ion beam etching depth monitoring method Download PDFInfo
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- CN103824790A CN103824790A CN201410052343.2A CN201410052343A CN103824790A CN 103824790 A CN103824790 A CN 103824790A CN 201410052343 A CN201410052343 A CN 201410052343A CN 103824790 A CN103824790 A CN 103824790A
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- H01—ELECTRIC ELEMENTS
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The invention provides an ion beam etching depth monitoring method. The ion beam etching depth monitoring method is characterized in that the ion beam etching depth monitoring method comprises the following steps that: step one, a layer of a standard material is plated on an electrode surface of a quartz crystal and is adopted as a plated film layer, such that a plated film quartz crystal can be obtained; step two, the plated film quartz crystal and a material to be etched are put in an ion beam etching machine, the plated film quartz crystal is connected with a frequency detection device; step three, the material to be etched and the plated film layer are etched simultaneously, and the frequency detection device monitors the etching depth of the plated film layer in real time, and when the frequency detection device monitors that the etching depth of the plated film layer achieves predetermined depth, etching is stopped, and an etched material that satisfies target etching depth can be obtained. The ion beam etching depth monitoring method provided by the invention is advantageous in simple devices, operational easiness, high precision and low cost.
Description
Technical field
The invention belongs to Micrometer-Nanometer Processing Technology field, be specifically related to a kind of quartz crystal oscillator method that adopts and carry out the monitoring method that monitoring ion bundle etching depth changes.
Background technology
Ion beam etching is a kind of application Micrometer-Nanometer Processing Technology very widely, and it reaches the object of removing material and shaping to the physical sputtering effect of material by ion beam, have the advantages such as resolution is high, directionality is good.
Etching depth is an important index in ion beam etching technology, therefore, is an important sport technique segment in etching process to the monitoring of etching depth.
At present, mostly adopt time control act or take light path and survey interference light intensity and carry out method and monitor the etching depth in etching process.Time control act is with needing the degree of depth of etching divided by the etch rate of the material to be etched of measuring in advance, obtain the time that this material is etched under same process condition, because etch rate is relevant with many factors, in etching process, be difficult to keep definite value, error is larger.When light path monitoring interference light intensity method monitoring etching depth is taken in employing, on the one hand, often more complicated of the light path of building, and each experiment all needs again to build light path, for user brings larger inconvenience, on the other hand, need to make accurate judgement to the extreme value of interference light intensity, carry out according to personal experience but judgement is many, therefore judged result often differs greatly, and stability is bad.Therefore, how can simple and quick and accurately the etching depth in ion beam etching of Fresnel be monitored, be problem demanding prompt solution.
Both at home and abroad the characteristic research of quartz crystal vibration has been had for a long time, achievement is remarkable, the quartz crystal monitoring instrument of Thickness Monitoring in coating process as well known.Due to the superperformance of quartz crystal oscillator and arrange simple, precision is high, the brilliant control of quartz instrument has obtained and has developed rapidly in recent years, be widely used in that electrochemistry is synthetic, course of dissolution, conducting polymer materials research, surface, surface physics chemical process on-line monitoring, multiple fields such as medical diagnosis, bacteriology, biochemistry and molecular biology.
Summary of the invention
The object of this invention is to provide a kind of monitoring method of the ion beam etching degree of depth, to address the above problem.
To achieve these goals, the technical solution adopted in the present invention is:
The monitoring method of the ion beam etching degree of depth, is characterized in that, comprises the following steps:
Step 1: plate one deck standard material as film plating layer on the electrode surface of quartz crystal, obtain plated film quartz crystal;
Step 2: plated film quartz crystal and material to be etched are inserted in ion bean etcher, and plated film quartz crystal is connected with frequency detecting device;
Step 3: simultaneously material to be etched and film plating layer are carried out to etching, frequency detecting device is monitored in real time to the etching depth of film plating layer, when the etching depth that monitors film plating layer when frequency detecting device reaches predetermined etching depth, stops etching, obtain meeting the etching material of the target etch degree of depth
Wherein, predetermined etching depth, according to the etch rate ratio of the target etch degree of depth and standard material and material to be etched, calculates.
In addition, the monitoring method of the ion beam etching degree of depth involved in the present invention can also have such feature: wherein, frequency detecting device passes through the frequency of oscillation of monitoring plated film quartz crystal, and the variation of frequency of oscillation is analyzed, and calculates the etching depth of film plating layer.
In addition, the monitoring method of the ion beam etching degree of depth involved in the present invention can also have such feature: wherein, the thickness of film plating layer is greater than predetermined etching depth.
In addition, the monitoring method of the ion beam etching degree of depth involved in the present invention can also have such feature: standard material is aluminium film.
Effect and the effect of invention
According to the monitoring method of the ion beam etching degree of depth provided by the present invention, owing to by frequency detecting device, the etching depth of film plating layer being carried out to Real-Time Monitoring, in the time reaching predetermined etching depth, stop etching, and predetermined etching depth calculates according to the etch rate ratio of the described target etch degree of depth and described standard material and described material to be etched, thereby indirectly realize the real-time monitoring to material etching depth to be etched, compared with taking light path monitoring interference light intensity method monitoring etching depth, monitoring method provided by the invention does not need to build complicated light path, therefore experimental technique is simple, easy operating.
In addition, because quartz crystal natural mode shape stability is high, therefore result accuracy is good.
In addition, because quartz crystal is cheap, therefore the monitoring method cost of the ion beam etching degree of depth provided by the present invention is lower.
Accompanying drawing explanation
Fig. 1 is the electrode surface plated film key diagram of quartz crystal in embodiment;
Fig. 2 is the etching key diagram of material to be etched and plated film quartz crystal in embodiment; And
Fig. 3 is material to be etched and the complete key diagram of plated film quartz crystal etching in embodiment.
Embodiment
Below in conjunction with accompanying drawing, the monitoring method of the ion beam etching degree of depth involved in the present invention is described further.
< embodiment >
The present embodiment is at energy 500ev, beam current density 1mA/cm
2etching under the experiment condition of vertical incidence, material to be etched is silicon chip, and standard material is aluminium film, and the target etch degree of depth of silicon chip is 190nm.
Get silicon chip and aluminium film and under above-mentioned experiment condition, carry out respectively ion beam etching experiment, obtain the etch rate of aluminium film and silicon chip, thereby the aluminium film of asking is 1.29:1 with the etch rate ratio of silicon chip.
According to the etch rate ratio of the two and the target etch degree of depth of silicon chip, through calculating, the predetermined etching depth that draws aluminium film is 245nm, and this predetermined etching depth is for to carry out etching by aluminium film and silicon chip simultaneously under above-mentioned experiment condition, the etching depth of aluminium film in the time that silicon chip reaches the target etch degree of depth.
Fig. 1 is the electrode surface plated film key diagram of quartz crystal in embodiment.
Fig. 2 is the etching key diagram of material to be etched and plated film quartz crystal in embodiment.
Fig. 3 is material to be etched and the complete key diagram of plated film quartz crystal etching in embodiment.
The monitoring method of the ion beam etching degree of depth that the present embodiment provides comprises the following steps:
Step 1: get quartz crystal and put into vacuum coating equipment, plate the aluminium film of about 350nm thickness on the electrode surface 11 of quartz crystal as shown in Figure 1, be film plating layer 12, obtain plated film quartz crystal 10;
Step 2: plated film quartz crystal 10 and material to be etched 13 are put into ion beam etcher, and plated film quartz crystal 10 is connected with frequency detecting device 14 as shown in Figure 2;
Step 3: at energy 500ev, beam current density 1mA/cm
2under the experiment condition of vertical incidence, film plating layer 12 and material to be etched 13 are carried out to etching simultaneously, frequency detecting device 14 is used for measuring the frequency of oscillation of plated film quartz crystal 10, and frequency of oscillation is changed and analyzed, according to analysis result, the etching depth of film plating layer 12 is calculated in real time and shown, in the time that frequency detecting device 14 shows that the etching depth of film plating layer 12 is 245nm, stop etching, take out silicon chip, obtain etching material 15 as shown in Figure 3, in Fig. 3, dotted portion is the part that is etched.
Through measurement, the etching depth of etching material 15 is 201nm, with the error of the target etch degree of depth be 5.7%, in the error range of global error 10%, meet requirement of experiment.
The effect of embodiment and effect
The monitoring method of the ion beam etching degree of depth providing according to the present embodiment, owing to calculating according to etch rate ratio and the target etch degree of depth, draw the predetermined etching depth of aluminium film, by frequency detecting device, the etching depth of film plating layer is carried out to Real-Time Monitoring, and then indirectly realize the real-time monitoring to material etching depth to be etched, compared with taking light path monitoring interference light intensity method monitoring etching depth, do not need to build complicated light path, therefore equipment therefor is simple, easy operating.
In addition, because quartz crystal natural mode shape stability is high, therefore result accuracy is good, and after etching completes, the etching depth of gained etching material and the error of the target etch degree of depth are only 5.7%.
In addition, because quartz crystal is cheap, be also cheaply easy to get as the aluminium film of standard material, thereby the method cost that the present embodiment is provided is lower.
The monitoring method of the ion beam etching degree of depth certainly involved in the present invention is not merely defined in the content in above-described embodiment.Above content is only the basic explanation of the present invention under conceiving, and according to any equivalent transformation that technical scheme of the present invention is done, all should belong to protection scope of the present invention.
In addition, standard material in above-described embodiment is aluminium film, in addition, standard material involved in the present invention can have multiple choices, can also select the metal coating materials such as Au, Ag, Cu, Ti, alloy, all right selective oxidation thing (as silicon dioxide, titanium oxide) and fluoride (as barium fluoride, magnesium fluoride) etc.
In addition, the selection silicon chip in above-described embodiment is only that under the present invention is conceived one illustrates as material to be etched, and this material to be etched, according to object difference, can be selected other material.
Claims (4)
1. the monitoring method of the ion beam etching degree of depth, is characterized in that, comprises the following steps:
Step 1: plate one deck standard material as film plating layer on the electrode surface of quartz crystal, obtain plated film quartz crystal;
Step 2: described plated film quartz crystal and material to be etched are inserted in ion bean etcher, and described plated film quartz crystal is connected with frequency detecting device;
Step 3: simultaneously described material to be etched and described film plating layer are carried out to etching, described frequency detecting device is monitored in real time to the etching depth of described film plating layer, when the etching depth that monitors described film plating layer when described frequency detecting device reaches predetermined etching depth, stop etching, obtain meeting the etching material of the target etch degree of depth
Wherein, described predetermined etching depth, according to the etch rate ratio of the described target etch degree of depth and described standard material and described material to be etched, calculates.
2. the monitoring method of the ion beam etching degree of depth according to claim 1, is characterized in that:
Wherein, described frequency detecting device passes through the frequency of oscillation of the described plated film quartz crystal of monitoring, and the variation of frequency of oscillation is analyzed, and calculates the etching depth of described film plating layer.
3. the monitoring method of the ion beam etching degree of depth according to claim 1, is characterized in that:
Wherein, the thickness of described film plating layer is greater than described predetermined etching depth.
4. the monitoring method of the ion beam etching degree of depth according to claim 1, is characterized in that:
Wherein, described standard material is aluminium film.
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| CN201410052343.2A CN103824790A (en) | 2014-02-17 | 2014-02-17 | Ion beam etching depth monitoring method |
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| CN201410052343.2A CN103824790A (en) | 2014-02-17 | 2014-02-17 | Ion beam etching depth monitoring method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810615A (en) * | 2016-04-21 | 2016-07-27 | 苏州能屋电子科技有限公司 | Method and system for monitoring in-situ etching of etching sample by employing crystal oscillator |
| CN105870012A (en) * | 2016-04-21 | 2016-08-17 | 苏州能屋电子科技有限公司 | Method and system for fabricating recessed gate enhanced high electron mobility transistor (HEMT) device by in-situ etching monitoring |
| WO2017020534A1 (en) * | 2015-08-04 | 2017-02-09 | 中山泰维电子有限公司 | Silver/aluminium alloy crystal oscillation plate coating process |
| CN110426451A (en) * | 2019-07-15 | 2019-11-08 | 深圳市华星光电技术有限公司 | The method for measurement of etch-rate measuring equipment and lateral etch rate |
| CN110850812A (en) * | 2019-11-18 | 2020-02-28 | 北京邮电大学 | Ion beam etching rate control method and device based on model |
| CN111609810A (en) * | 2020-05-19 | 2020-09-01 | 中国科学院光电技术研究所 | Method for determining etching depth of high-energy ion beam on glass substrate |
| CN111653467A (en) * | 2020-06-02 | 2020-09-11 | 西安交通大学 | Etching end point detection system and method based on resonator |
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| US20020100745A1 (en) * | 1998-03-02 | 2002-08-01 | Dirk M. Knotter | Ethching method |
| CN102004499A (en) * | 2009-08-31 | 2011-04-06 | 上海欧菲尔光电技术有限公司 | Thickness control method of infrared optical thin film in production process of infrared optical filter |
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2014
- 2014-02-17 CN CN201410052343.2A patent/CN103824790A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020100745A1 (en) * | 1998-03-02 | 2002-08-01 | Dirk M. Knotter | Ethching method |
| CN102004499A (en) * | 2009-08-31 | 2011-04-06 | 上海欧菲尔光电技术有限公司 | Thickness control method of infrared optical thin film in production process of infrared optical filter |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017020534A1 (en) * | 2015-08-04 | 2017-02-09 | 中山泰维电子有限公司 | Silver/aluminium alloy crystal oscillation plate coating process |
| CN105810615A (en) * | 2016-04-21 | 2016-07-27 | 苏州能屋电子科技有限公司 | Method and system for monitoring in-situ etching of etching sample by employing crystal oscillator |
| CN105870012A (en) * | 2016-04-21 | 2016-08-17 | 苏州能屋电子科技有限公司 | Method and system for fabricating recessed gate enhanced high electron mobility transistor (HEMT) device by in-situ etching monitoring |
| CN105870012B (en) * | 2016-04-21 | 2018-07-17 | 苏州能屋电子科技有限公司 | The method and system of the enhanced HEMT device of recessed grid are prepared by etching monitoring in situ |
| CN110426451A (en) * | 2019-07-15 | 2019-11-08 | 深圳市华星光电技术有限公司 | The method for measurement of etch-rate measuring equipment and lateral etch rate |
| CN110426451B (en) * | 2019-07-15 | 2021-12-24 | Tcl华星光电技术有限公司 | Etching rate measuring device and lateral etching rate measuring method |
| CN110850812A (en) * | 2019-11-18 | 2020-02-28 | 北京邮电大学 | Ion beam etching rate control method and device based on model |
| CN111609810A (en) * | 2020-05-19 | 2020-09-01 | 中国科学院光电技术研究所 | Method for determining etching depth of high-energy ion beam on glass substrate |
| CN111609810B (en) * | 2020-05-19 | 2021-08-13 | 中国科学院光电技术研究所 | Method for determining etching depth of high-energy ion beam on glass substrate |
| CN111653467A (en) * | 2020-06-02 | 2020-09-11 | 西安交通大学 | Etching end point detection system and method based on resonator |
| CN111653467B (en) * | 2020-06-02 | 2021-05-14 | 西安交通大学 | Etching end point detection system and method based on resonator |
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Inventor after: Sheng Bin Inventor after: Yang Sai Inventor after: Zhang Dawei Inventor after: Tang Qingyong Inventor after: Chen Peng Inventor before: Yang Sai Inventor before: Sheng Bin Inventor before: Zhang Dawei Inventor before: Tang Qingyong Inventor before: Chen Peng |
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Free format text: CORRECT: INVENTOR; FROM: YANG SAI SHENG BIN ZHANG DAWEI TANG QINGYONG CHEN PENG TO: SHENG BIN YANG SAI ZHANG DAWEI TANG QINGYONG CHEN PENG |
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Application publication date: 20140528 |