CN102088274A - Production method of high-fundamental frequency crystal resonator - Google Patents
Production method of high-fundamental frequency crystal resonator Download PDFInfo
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- CN102088274A CN102088274A CN2010105789631A CN201010578963A CN102088274A CN 102088274 A CN102088274 A CN 102088274A CN 2010105789631 A CN2010105789631 A CN 2010105789631A CN 201010578963 A CN201010578963 A CN 201010578963A CN 102088274 A CN102088274 A CN 102088274A
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Abstract
The invention discloses a production method of a high-fundamental frequency crystal resonator, comprising the following steps: step A, selecting a quartz wafer for processing to enable a frequency of the wafer to be 152.6MHz +/-120kHz; step B, under vacuum condition, evaporating an aluminum layer on the quartz wafer first to reduce the frequency of the quartz wafer to 149.67MHz+/-120kHz, then evaporating a silver layer on the aluminum layer to reduce the frequency of the quartz wafer to 149.0MHz +/- 120kHz; step C, bombarding the silver layer via an ion etching method in a vacuum device to enable the frequency of the quartz wafer to rise again to 150MHz +/- 5kHz. According to the invention, oxidation of an aluminum electrode can be effectively avoided and the frequency control precision is improved. The operation is simple and practicable. The method in the invention can be applied to batch production.
Description
Technical field
The present invention relates to a kind of production method of crystal resonator, be specifically related to a kind of production method of high fundamental crystal resonator.
Background technology
Along with the development of technology such as microwave communication, satellite, space flight, radar, high fundamental frequency quartz crystal is used by commercial and military more and more widely.Owing to be the fundamental tone quartz crystal, than higher overtone crystal (as 3 overtones or 5 overtones), the crystal of same frequency, its thickness are the latter's 1/3 or 1/5, and because frequency is very high, so the quality of its wafer itself is very little.Existing high fundamental crystal resonator mostly adopts density very little (be about silver 1/4), and aluminium is as electrode material, but the very easy oxidation of aluminium uses chemical method to finely tune frequency, easily produces chemical contamination, and the FREQUENCY CONTROL precision is low, is not easy to produce in batches.
Summary of the invention
The production method that the purpose of this invention is to provide a kind of high fundamental crystal resonator can effectively prevent the oxidation of aluminium electrode and improve the FREQUENCY CONTROL precision that operation is simple, and be suitable for producing in batches.
To achieve these goals, the present invention is by the following technical solutions:
A kind of production method of high fundamental crystal resonator comprises the steps:
Steps A is chosen quartz wafer and is processed, and making the quartz wafer frequency is 152.6MHz ± 120kHz; Step B, under vacuum condition, evaporation aluminium lamination on quartz wafer makes the quartz wafer frequency values be reduced to 149.67MHz ± 120kHz earlier, at aluminium lamination surface evaporation silver layer, makes the quartz wafer frequency be reduced to 149.0MHz ± 120kHz again;
Step C in vacuum equipment, bombards silver layer with ion etching process, and the central value of the frequency of quartz wafer is gone up to 150MHz ± 5kHz.
Further, in the described steps A, the thickness of quartz wafer is about 0.011mm.
Further, among the described step C, adopt the argon ion bombardment silver layer.
Beneficial effect of the present invention is:
The present invention prevents the oxidation of aluminium electrode with silverskin aluminium coating electrode, is convenient to follow-up ion etching; The technology that the method for former chemical corrosion is changed into ion etching is adjusted high fundamental crystal resonant frequency and is reached or the convergence nominal frequency, with the method frequency modulation of ion etching, can effectively control pollution, improves frequency accuracy; The high fundamental crystal resonator electric performance stablity that uses this method to produce, the frequency stability height.
Other advantages of the present invention, target and feature will be set forth to a certain extent in the following description, and to a certain extent, based on being conspicuous to those skilled in the art, perhaps can obtain instruction from the practice of the present invention to investigating hereinafter.
Embodiment
With the production frequency is that the high fundamental crystal resonator of 150MHz is an example:
Steps A is chosen quartz wafer and is processed, and the central value that makes the quartz wafer frequency is 152.6MHz;
Because the frequency of high fundamental crystal resonator, has only so the thickness of quartz wafer calculates according to nominal frequency up to 150MHz
, very thin, the central value of actual quartz wafer frequency is 152.6MHz.
Step B, under vacuum condition, first evaporation aluminium lamination (being the aluminium electrode), make frequency be reduced to 149.67MHz, evaporation silver layer more at once then on the aluminium lamination surface, promptly evaporation silver layer on the aluminium electrode makes frequency be reduced to 149.0MHz(and makes frequency a little less than nominal frequency); When wafer takes out vacuum chamber, just can avoid the oxidation of aluminium lamination (being the aluminium electrode) like this.
Step C with the method calibrating frequency of ion etching, promptly in vacuum equipment, use the argon ion bombardment silver layer, bombards the part silver layer, makes frequency progressively go back up to nominal frequency (150MHz ± 5kHz).
The employing physical method is that the method for ion etching is carried out frequency trim, and this method is to carry out on ion etching equipment, and its advantage is: FREQUENCY CONTROL precision height is easy to produce in batches.
High fundamental tone crystal resonator because of its quartz wafer is very thin, approximately has only 0.01mm thick, and the quality of quartz wafer is very little, so when doing electrode on quartz wafer, generally adopt the less aluminium of density (Al) to do electrode.Do electrode with aluminium, all the technology that adopts chemical corrosion when frequency calibration, unnecessary aluminium lamination is corroded, so that frequency reaches or near the nominal frequency that requires, but this calibrating frequency method only is suitable for the development stage---do not need main equipment, dispose some chemical agents and can carry out trial-production.And owing to be to use chemicals, have following shortcoming: the corrosion medicament is difficult for cleaning up as easy as rolling off a log residual corrosivity medicament; In crystal element, even the residual corrosive substance that trace is arranged also can make the crystal product technical indicator progressively reduce; Method verification frequency with chemical corrosion can only be carried out at present one by one, repeated detection, checking again, and production efficiency is low, can't implement to produce in batches.The easy oxidation of aluminium electrode is owing to have the protection of oxide layer, the not convenient technology that is used for vacuum ionic or laser ablation.
Explanation is at last, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, other modifications that those of ordinary skills make technical scheme of the present invention or be equal to replacement, only otherwise break away from the spirit and scope of technical solution of the present invention, all should be encompassed in the middle of the claim scope of the present invention.
Claims (3)
1. the production method of a high fundamental crystal resonator is characterized in that: comprise the steps:
Steps A is chosen quartz wafer and is processed, and the central value that makes the quartz wafer frequency is 152.6MHz ± 120kHz;
Step B, under vacuum condition, evaporation aluminium lamination on quartz wafer makes the central value of quartz wafer frequency be reduced to 149.67MHz ± 120kHz earlier, at aluminium lamination surface evaporation silver layer, makes the central value of quartz wafer frequency be reduced to 149.0MHz ± 120kHz again;
Step C in vacuum equipment, bombards silver layer with ion etching process, and the central value of the frequency of quartz wafer is gone up to 150MHz ± 5kHz.
2. the production method of a kind of high fundamental crystal resonator according to claim 1 is characterized in that: in the described steps A, the thickness of quartz wafer is 0.011mm.
3. the production method of a kind of high fundamental crystal resonator according to claim 2 is characterized in that: among the described step C, adopt the argon ion bombardment silver layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2010105789631A CN102088274A (en) | 2010-12-08 | 2010-12-08 | Production method of high-fundamental frequency crystal resonator |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105789631A CN102088274A (en) | 2010-12-08 | 2010-12-08 | Production method of high-fundamental frequency crystal resonator |
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| CN102088274A true CN102088274A (en) | 2011-06-08 |
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| CN2010105789631A Pending CN102088274A (en) | 2010-12-08 | 2010-12-08 | Production method of high-fundamental frequency crystal resonator |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017020534A1 (en) * | 2015-08-04 | 2017-02-09 | 中山泰维电子有限公司 | Silver/aluminium alloy crystal oscillation plate coating process |
| CN107634733A (en) * | 2017-09-27 | 2018-01-26 | 合肥晶威特电子有限责任公司 | A kind of quartz-crystal resonator and its processing method |
| CN107666296A (en) * | 2017-09-27 | 2018-02-06 | 合肥晶威特电子有限责任公司 | A kind of processing method of quartz-crystal resonator |
| CN109687865A (en) * | 2018-12-02 | 2019-04-26 | 南京中电熊猫晶体科技有限公司 | A kind of big pressure controlled constant tempeature crystal oscillator of small size |
| CN110729981A (en) * | 2019-11-11 | 2020-01-24 | 四川省三台水晶电子有限公司 | Preparation method of quartz wafer based on filter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1124328A1 (en) * | 2000-02-10 | 2001-08-16 | Lucent Technologies Inc. | A method of fabricating a zinc oxide based resonator |
| CN101741333A (en) * | 2008-11-04 | 2010-06-16 | 日照旭日电子有限公司 | Production technology of resonator base |
-
2010
- 2010-12-08 CN CN2010105789631A patent/CN102088274A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1124328A1 (en) * | 2000-02-10 | 2001-08-16 | Lucent Technologies Inc. | A method of fabricating a zinc oxide based resonator |
| CN101741333A (en) * | 2008-11-04 | 2010-06-16 | 日照旭日电子有限公司 | Production technology of resonator base |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017020534A1 (en) * | 2015-08-04 | 2017-02-09 | 中山泰维电子有限公司 | Silver/aluminium alloy crystal oscillation plate coating process |
| CN107634733A (en) * | 2017-09-27 | 2018-01-26 | 合肥晶威特电子有限责任公司 | A kind of quartz-crystal resonator and its processing method |
| CN107666296A (en) * | 2017-09-27 | 2018-02-06 | 合肥晶威特电子有限责任公司 | A kind of processing method of quartz-crystal resonator |
| CN109687865A (en) * | 2018-12-02 | 2019-04-26 | 南京中电熊猫晶体科技有限公司 | A kind of big pressure controlled constant tempeature crystal oscillator of small size |
| CN110729981A (en) * | 2019-11-11 | 2020-01-24 | 四川省三台水晶电子有限公司 | Preparation method of quartz wafer based on filter |
| CN110729981B (en) * | 2019-11-11 | 2023-03-14 | 四川省三台水晶电子有限公司 | Preparation method of quartz wafer based on filter |
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Application publication date: 20110608 |