CN105072793A - Microwave plasma torch device - Google Patents
Microwave plasma torch device Download PDFInfo
- Publication number
- CN105072793A CN105072793A CN201510442041.0A CN201510442041A CN105072793A CN 105072793 A CN105072793 A CN 105072793A CN 201510442041 A CN201510442041 A CN 201510442041A CN 105072793 A CN105072793 A CN 105072793A
- Authority
- CN
- China
- Prior art keywords
- microwave
- coupling
- cavity
- pipe
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008878 coupling Effects 0.000 claims abstract description 67
- 238000010168 coupling process Methods 0.000 claims abstract description 67
- 238000005859 coupling reaction Methods 0.000 claims abstract description 67
- 230000005684 electric field Effects 0.000 claims abstract description 14
- 230000005540 biological transmission Effects 0.000 claims description 12
- 239000007769 metal material Substances 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 6
- 241000168254 Siro Species 0.000 claims description 3
- 238000009987 spinning Methods 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000002510 pyrogen Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 13
- 230000009977 dual effect Effects 0.000 description 10
- 239000000443 aerosol Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000010183 spectrum analysis Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002663 nebulization Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Abstract
The invention provides a microwave plasma torch device which comprises a cavity part, a microwave coupling part and a tuning part. The cavity part comprises an inner tube, a middle tube and an outer tube, wherein the inner tube, the middle tube and the outer tube are successively coaxially arranged from the inside out. One end of the cavity part is open. The tuning part is arranged on the other end to adjust the field strength of the open end. A microwave coupling opening is arranged in the side wall of the outer tube. The microwave coupling part and the cavity part are in microwave coupling through the microwave coupling opening. A first microwave resonant cavity is formed between the outer tube and the middle tube. A porous pad which is used for coaxially fixing the inner tube and the middle tube is arranged between the inner tube and the middle tube. The first microwave resonant cavity couples microwave into a space between the inner tube and the middle tube through the open end of the cavity part to form a second microwave resonant cavity. The upper surface of the porous pad is the reflective surface of the second microwave resonant cavity. The microwave plasma torch device provided by the invention has the advantages of wide application power range and excellent plasma gas stability, and further avoids a series of problems caused by superposition of high-strength electric field pyrogenicity and a plasma heat source.
Description
Technical field
The invention belongs to field of spectral analysis technology, concrete, relate to a kind of microwave plasma torch device, the plasma that stability is splendid can be obtained, and the scope that is applicable at several watts on kilowatt power condition.
Background technology
The torch pipe of MPT (microwave plasma torch) is generally three pipe coaxial configurations of one end open, sample (aerosol, or aerosol and plasma carrier gas in conjunction with air-flow) pass in interior pipe, plasma gas passes between interior pipe and middle pipe, microwave is by being coupled into torch pipe, excite plasma gas to produce plasma at torch tube opening end, thus sample carry out spectrum analysis after plasma.
The volume of plasma formed due to hectowatt grade MPT is less, gas temperature lower (2100K), sample in the plasma the time of staying shorter, be unfavorable for sample aerosol by completing evaporation during plasma source, go molten, atomization, ionize, excite, a series of process such as transmitting, when doing complex sample and analyzing, matrix effect is more serious.Therefore, having to, it is molten to carry out before sample enters plasma source, and sampling system also just becomes complicated.If under traditional Structure of Microwave Plasma Torch is used in high-power condition, although excite ability stronger, often the single-point monofilament formed without actual analysis using value discharges, and is difficult to form valuable, stable funnel shaped plasma.Based on this, be necessary to research and develop the microwave plasma torch device having and excite more by force ability, the plasma with actual analysis using value can be formed, be beneficial to the spectrum analysis of sample.
In addition, the electric field that formation two is stronger is needed in MPT structure, one is coupled into MPT cavity for microwave energy, one for exciting and maintain plasma, and in existing design two comparatively highfield spatial distribution superposes substantially, can cause under high-power condition that plasma stability and microwave transmission efficiency are disturbed mutually, plasma high-temperature causes the problems such as microwave transmission efficiency reduction.
Summary of the invention
Object to be solved by this invention is to provide a kind of microwave plasma torch device, and suitable power scope is wider, and the plasma gas stability of acquisition is splendid, can avoid because high-strength electric field pyrogenicity superposes the series of problems caused with plasma heat source simultaneously.
For solving the problem, the present invention proposes a kind of microwave plasma torch device, comprises cavity portion, microwave coupling part and tuning part, cavity portion comprises from inside to outside the coaxial interior pipe arranged successively, middle pipe, outer tube, cavity portion one end is openend, the other end arranges described tuning part in order to adjust the field intensity of openend, outer tube wall is provided with microwave coupling opening, microwave coupling part is through this microwave coupling opening and cavity portion microwave coupling, the first microwave cavity is formed between outer tube and middle pipe, be provided with in order to by interior pipe and the co-axially fixed porous gasket of middle pipe between interior pipe and middle pipe, microwave coupling is extremely formed the second microwave cavity between interior pipe and middle pipe through the openend of cavity portion by described first microwave cavity, the upper surface of described porous gasket is configured to the reflecting surface of this second microwave cavity.
According to one embodiment of present invention, described outer tube, middle pipe, interior pipe and porous gasket are metal material object.
According to one embodiment of present invention, the outer wall of the inwall of described outer tube, the inside and outside wall of middle pipe, interior pipe, and the upper surface of porous gasket is formed by metal material.
According to one embodiment of present invention, the distance range of described porous gasket distance cavity portion openend end face exists
between, wherein, N is positive odd number, and λ is the wavelength of microwave.
According to one embodiment of present invention, described tuning part is adjusted to the degree of depth of cavity portion and is
m is positive odd number, and λ is the wavelength of microwave.
According to one embodiment of present invention, described microwave coupling part comprises coupled antenna and coupling loop, coupling loop is connected on middle pipe outer wall, coupled antenna one end connects microwave transmission line, by microwave coupling to forming described first microwave cavity between outer tube and middle pipe through described microwave coupling opening butt coupling ring, the other end.
According to one embodiment of present invention, described coupled antenna is configured in cavity portion internal electric field and distributes most strong position place.
According to one embodiment of present invention, pipe outer wall in described coupling loop compact siro spinning technology, or, pipe outer wall in described coupling loop recessed bond ing.
According to one embodiment of present invention, described microwave coupling part comprises coupled antenna, this coupled antenna one end connects tuning part upper surface through described microwave coupling opening, the other end connects microwave transmission line, by microwave coupling to forming described first microwave cavity between outer tube and middle pipe.
According to one embodiment of present invention, described coupled antenna is configured in cavity portion internal magnetic field and distributes most strong position place.
After adopting technique scheme, the present invention has following beneficial effect compared to existing technology: microwave coupling part by microwave coupling to after between outer tube and middle pipe, microwave is coupled between middle pipe and interior pipe by the openend of cavity portion, tuning part is as the microwave reflection face of outer tube and middle pipe, incident wave between outer tube and middle pipe and reflected wave define standing wave, pad is as the microwave reflection face of middle pipe and interior pipe, incident wave between middle pipe and interior pipe and reflected wave also form standing wave, be tuned as the strongest in the electric field strength of openend, under high-power condition and small-power condition, all can form the thread plasma around middle tubular axis line High Rotation Speed, the root of plasma is arranged in inside pipe wall apart from openend end face certain depth place, plasma root and middle pipe contact area large, thus area of dissipation is larger, make plasma source in, heat deposition on inner tubal wall reduces, thus in decreasing, the deformation quantity that interior pipe causes due to heat deposition, avoid the electromagnetic transmission character caused due to deformation to change, and from interior pipe sample out not with the root direct effect of plasma, the root of survivable plasma, the stability of plasma is splendid.
Further, the mode of magnetic Field Coupling is adopted to introduce microwave, microwave coupling district is spatially separated with plasma forming region, avoid high-power coupled antenna due to close to thermal source temperature rise, thus cause as efficiency of transmission reduce, the problem of the destruction effective output stability such as thermal losses is serious, partial discharge and plasma stability.The parts of microwave plasma torch device connect convenient, magnetic coupling does not need to realize electrical contact with middle pipe simultaneously, the transmission avoiding heat with superpose, the function that magnetic Field Coupling and electric field excite is separated to be separated with space and eliminates coupled structure to the symmetric interference of MPT openend electromagnetic symmetry and flow field.
Accompanying drawing explanation
Fig. 1 is the structural representation of the microwave plasma torch device of one embodiment of the invention;
Fig. 2 is the structural representation of the microwave plasma torch device of another embodiment of the present invention;
Fig. 3 is the Electric Field Simulation distribution map of the microwave plasma torch device of one embodiment of the invention;
MPT cavity portion electric field strength maximum distribution map when Fig. 4 is porous gasket distance cavity portion openend end face different depth;
Fig. 5 a is the plasma schematic diagram that MPT traditional under small-power condition is formed;
Fig. 5 b is the plasma schematic diagram that under small-power condition, MPT of the present invention is formed;
Fig. 6 is the plasma schematic diagram that under high-power condition, MPT of the present invention is formed.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
Referring to Fig. 1, in the present embodiment, microwave plasma torch device comprises outer tube 1, middle pipe 2, interior pipe 3, tuning part 4, coupled antenna 5, coupling loop 6, porous gasket 7.
Outer tube 1, middle pipe 2 and interior pipe 3 constitute the cavity portion of microwave plasma torch device, the upper end of cavity portion is an openend, lower end is provided with tuning part 4, the upper surface of tuning part 4 is the reflectings surface as microwave between outer tube 1 and middle pipe 2, the position of adjustment tuning part 4 can regulate the height of this reflecting surface, thus change reflected wave, between outer tube 1 and middle pipe 2, form the first microwave cavity, in the first microwave cavity, produce required electromagnetic field standing wave.
The lower end of interior pipe 3 is used for passing into sample, sample is such as aerosol, or the mixture air-flow of aerosol and plasma gas, certainly can also be other the object air-flow for spectrum analysis, middle pipe 2 is used to pass into plasma gas, and plasma gas can be such as argon gas, nitrogen, helium etc., and the plasma gas passed into is between middle pipe 2 and interior pipe 3, to be excited formation plasma at the openend of cavity portion, sample and this Plasma Interaction.
In Fig. 1, outer tube 1 wall is offered a microwave coupling opening, and coupling loop 6 is connected on middle pipe 2 outer wall, and coupled antenna 5 is connected with coupling loop 6 through this microwave coupling opening, after coupled antenna 5 connects microwave transmission line and introduces microwave, microwave coupling is transferred between outer tube 1 and middle pipe 2.Preferably, coupled antenna 5 is configured in cavity portion internal electric field and distributes most strong position place, and adjustment tuning part 4 highly makes the electric field strength of cavity portion openend the strongest, and field strength is the most weak, and tuning part 4 is preferably adjusted to and makes the degree of depth of cavity portion to be
m is positive odd number, and λ is the wavelength of microwave.
Optionally, pipe 2 outer wall in coupling loop 6 compact siro spinning technology, in the mode of conductance coupling by between microwave energy feed-in outer tube 1 and middle pipe 2; Or pipe 2 outer wall in coupling loop 6 recessed bond ing, namely also has certain gap between coupling loop 6 and middle pipe 2 outer wall, in capacity coupled mode by between microwave energy feed-in outer tube 1 and middle pipe 2.
At the microwave coupling of the openend outer tube 1 of cavity portion and middle pipe 2 between middle pipe 2 and interior pipe 3, owing to being provided with porous gasket 7 between middle pipe 2 and interior pipe 3, porous gasket 7 is concentric ring structures, the external diameter of porous gasket 7 is consistent with the internal diameter of middle pipe 2, the internal diameter of porous gasket 7 is consistent with the external diameter of interior pipe 3, porous gasket 7 has been offered multiple air vent hole, the effect of porous gasket 7 except routine be used for circulate plasma gas and in ensureing pipe 2 and interior pipe 3 axiality except, also be used as the reflecting surface of microwave between middle pipe 2 and interior pipe 3, be appreciated that, as the reflecting surface of microwave, this face can be used for being reflected into ejected wave, thus the first microwave cavity is formed between middle pipe 2 and interior pipe 3, electromagnetic field standing wave needed for producing in microwave cavity.
Preferably, outer tube 1, middle pipe 2, interior pipe 3 and porous gasket 7 are metal material object, optionally, the inwall of outer tube 1, the inside and outside wall of middle pipe 2, the outer wall of interior pipe 3 and the upper surface of porous gasket 7 are formed by metal material, make can transmit microwave between outer tube 1 and middle pipe 2, between middle pipe 2 and interior pipe 3, and the upper surface of porous gasket 7 can be reflected into ejected wave.Metal material can be such as the good metals of electric conductivity such as gold, silver, copper, stainless steel.
Preferably, the distance scope that is configured between porous gasket 7 and cavity portion openend end face is existed
between, wherein, N is positive odd number, and λ is the wavelength of microwave, and its unit follows the unit of microwave wavelength λ.Porous gasket 7 is arranged on the positive odd number times vicinity of the cavity portion degree of depth 1/4 microwave wavelength, the electric field strength of cavity portion open end can be made to reach high value, certainly this distance range is only preferred value, also can realize dual resonance structure of the present invention at other distance value places, obtain good plasma.
Microwave between outer tube 1 and middle pipe 2, and the microwave between middle pipe 2 and interior pipe 3, define the dual resonance structure of microwave plasma torch device, and between outer tube and middle pipe, only form microwave in prior art, cannot form dual resonance structure.The microwave plasma torch device of dual resonance structure, higher in the maximum field intensity of cavity portion openend, far away higher than non-dual resonance structure, more easily puncture plasma gas form plasma and maintain, the root of plasma is arranged in pipe 2 inwall, the root of the survivable plasma of the sample passed through, the plasma formed is more stable.
Referring to Fig. 2, in the present embodiment, microwave plasma torch device comprises outer tube 1 ', middle pipe 2 ', interior pipe 3 ', tuning part 4 ', coupled antenna 5 ', porous gasket 7 '.Microwave coupling opening offered by outer tube 1 ' wall, coupled antenna stretches into this microwave coupling opening and is connected with the upper surface of tuning part 4 ', in the mode of magnetic Field Coupling by between microwave energy feed-in outer tube 1 ' and middle pipe 2 ', preferably, coupled antenna 5 ' is located at cavity portion internal magnetic field and distributes most strong position place.Microwave coupling district is positioned at tuning part 4 ' upper end surface area place, plasma forming region is positioned at the openend of cavity portion, it is far away that both spatially separate, avoid high-power coupled antenna 5 ' due to close to plasma heat source temperature rise, thus cause as efficiency of transmission reduce, the problem of the destruction effective output stability such as thermal losses is serious, partial discharge and plasma stability.Save coupling loop, the parts of microwave plasma torch device connect convenient, magnetic coupling does not need and the electrical contact of middle pipe 2 ' simultaneously, the transmission avoiding heat with superpose, the function that magnetic Field Coupling and electric field excite is separated to be separated with space and eliminates coupled structure to the symmetric interference of MPT openend electromagnetic symmetry and flow field.The associated description of other parts referring to the detailed description of previous embodiment, can not repeat them here.
Optionally, in the present embodiment, coupled antenna 5 ' can also by penetrating after the upper perforate of tuning part 4 ' from the perforate of tuning part 4 ', microwave is introduced between outer tube 1 ' and middle pipe 2 ', thus be more convenient for realizing tuber function, after outer tube 1 ' wall not arranging microwave coupling opening, also would not limit the tuning setting scope of tuning part 4 '.
It should be noted that; the mode of microwave coupling is not restricted to the embodiment provided in Fig. 1 and Fig. 2; other microwave coupling modes that microwave energy can be realized to be coupled into cavity portion can be used in microwave plasma torch device of the present invention; the change that those skilled in the art make according to the present invention easily all falls into protection scope of the present invention, such as, to the change of microwave coupling mode.
Fig. 3 is the Electromagnetic Simulation figure according to a kind of microwave plasma torch device provided by the invention, porous gasket is positioned at the openend end face 1/4 λ place apart from cavity portion, for 2450MHz electromagnetic wave, λ is 122.4mm, namely porous gasket is positioned at the openend end face 30.6mm apart from cavity portion, when this position, defines standing electromagnetic wave field A between outer tube and inner tube, and between middle pipe and interior pipe, also form standing electromagnetic wave field B, namely cavity portion forms dual resonance structure.Conventional porous gasket is placed in distance openend immediate area (lower than 15mm), mainly plays pipe and the effect of interior pipe concentricity in guarantee, does not do requirement, cannot form dual resonance structure to material.
Fig. 4 be porous gasket be positioned at apart from cavity portion openend end face diverse location place time, MPT cavity portion electric field strength maximum distribution map, when porous gasket distance openend is about 30mm, the maximum field intensity of MPT cavity portion is up to 2204kV/m, far away higher than non-dual resonance structure, more easily puncture plasma gas form plasma and maintain, the plasma formed is more stable, the openend endface position degree of depth of porous gasket apart from cavity portion of 1-35mm is illustrate only in Fig. 4, the maximum field intensity of odd-multiple vicinity of 1/4 wavelength that transverse axis forward extends in the drawings is also almost high with 30mm place.
The argon plasma that the MPT that Fig. 5 a is traditional under showing small-power condition is formed, porous gasket 70 is less than 15mm with the distance of cavity portion openend end face, plasma is easier to form the form in Fig. 5 a or static monofilament plasma form, in Fig. 5 a, the root a1 of plasma is formed in interior pipe 10 outer wall, with middle pipe 20 in a distance, be core portion a2 on the root a1 of plasma, be wake flame a3 on core portion a2, the root a1 of plasma is mainly positioned at outer wall of inner tube, interior pipe 10 inwall open end also has thread plasma to draw, this is totally unfavorable for spectrum analysis, interior pipe 10 is mainly used in the introducing of sample, sample aerosol when being drawn by interior pipe first with plasma root direct effect, the energy continuation of plasma root is damaged, greatly reduce the stability of plasma and the ability to bear to sample, the ability that excites of plasma is also subject to sample type, the extreme influence of character.
Fig. 5 b plasma that under showing small-power condition, MPT of the present invention is formed, the distance of porous gasket 7 and cavity portion openend end face is between 20-40mm, plasma is seen because skin effect is instantaneous and is thread plasma, because this thread plasma stability is positioned at certain region near axis, therefore its around axle High Rotation Speed time become space-time " motionless district ", thus make plasma macroscopic view present the characteristic of falling infundibulate with centre gangway; In addition because plasma is at High Rotation Speed, plasma also can not continue the heating of cavity portion point, and the heat of generation is taken away by high velocity air again, although therefore when MPT material adopts metallic copper, the spectral line can not observing copper in spectrum occurs.In Fig. 5 b, plasma root b1 is arranged in pipe 2 span openend certain depth place, be core portion b2 on the root b1 of plasma, be wake flame b3 on core portion b2, plasma is drawn between middle pipe 2 and interior pipe 1, sample aerosol not with plasma root b1 direct effect, and only interact with plasma space-time " motionless district " (core portion b2 and wake flame b3), the ability to bear of plasma to the sample such as aerosol, air using dual resonance structure MPT of the present invention to be formed improves greatly.
The plasma that under Fig. 6 shows high-power condition, (one kilowatt) MPT of the present invention is formed, plasma root c1 is arranged in pipe 2 span openend certain depth place, therefrom inside pipe wall is drawn, can find out, MPT dual resonance structure not only can form the plasma of macroeconomic stability under high-power condition, also inherit plasma that small-power MPT formed fall funnel shaped, there is the feature of centre gangway being beneficial to sample and introducing.Compared to small-power, the ability to bear of plasma to the sample such as aerosol and air molecule that multikilowatt MPT is formed is further improved, the direct nebulization sampling of sample can be accomplished, eliminate molten step, this be conventional disresonance MPT structure be difficult to accomplish.
Microwave plasma torch device operating frequency range of the present invention can be microwave and radio frequency band, power bracket can be 20W-5kW, the power scope of application is wider, the plasma stability formed is better, can be applicable to the fields such as atomic emission spectrum, atomic absorption spectrum, spectrum mass spectrometry, material surface process, exhaust-gas treatment.
Although the present invention with preferred embodiment openly as above; but it is not for limiting claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible variation and amendment, the scope that therefore protection scope of the present invention should define with the claims in the present invention is as the criterion.
Claims (10)
1. a microwave plasma torch device, is characterized in that, comprises cavity portion, microwave coupling part and tuning part, cavity portion comprises from inside to outside the coaxial interior pipe arranged successively, middle pipe, outer tube, cavity portion one end is openend, the other end arranges described tuning part in order to adjust the field intensity of openend, outer tube wall is provided with microwave coupling opening, microwave coupling part is through this microwave coupling opening and cavity portion microwave coupling, the first microwave cavity is formed between outer tube and middle pipe, be provided with in order to by interior pipe and the co-axially fixed porous gasket of middle pipe between interior pipe and middle pipe, microwave coupling is extremely formed the second microwave cavity between interior pipe and middle pipe through the openend of cavity portion by described first microwave cavity, the upper surface of described porous gasket is configured to the reflecting surface of this second microwave cavity.
2. microwave plasma torch device as claimed in claim 1, it is characterized in that, described outer tube, middle pipe, interior pipe and porous gasket are metal material object.
3. microwave plasma torch device as claimed in claim 1, it is characterized in that, the outer wall of the inwall of described outer tube, the inside and outside wall of middle pipe, interior pipe, and the upper surface of porous gasket is formed by metal material.
4. microwave plasma torch device as claimed in claim 1, is characterized in that, the distance range of described porous gasket distance cavity portion openend end face exists
between, wherein, N is positive odd number, and λ is the wavelength of microwave.
5. microwave plasma torch device as claimed in claim 1, it is characterized in that, the degree of depth that described tuning part is adjusted to cavity portion is
m is positive odd number, and λ is the wavelength of microwave.
6. microwave plasma torch device as claimed in claim 1, it is characterized in that, described microwave coupling part comprises coupled antenna and coupling loop, coupling loop is connected on middle pipe outer wall, coupled antenna one end connects microwave transmission line, by microwave coupling to forming described first microwave cavity between outer tube and middle pipe through described microwave coupling opening butt coupling ring, the other end.
7. microwave plasma torch device as claimed in claim 6, is characterized in that, described coupled antenna is configured in cavity portion internal electric field and distributes most strong position place.
8. microwave plasma torch device as claimed in claim 6, is characterized in that, pipe outer wall in described coupling loop compact siro spinning technology, or, pipe outer wall in described coupling loop recessed bond ing.
9. microwave plasma torch device as claimed in claim 1, it is characterized in that, described microwave coupling part comprises coupled antenna, this coupled antenna one end connects tuning part upper surface through described microwave coupling opening, the other end connects microwave transmission line, by microwave coupling to forming described first microwave cavity between outer tube and middle pipe.
10. microwave plasma torch device as claimed in claim 9, is characterized in that, described coupled antenna is configured in cavity portion internal magnetic field and distributes most strong position place.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510442041.0A CN105072793B (en) | 2015-07-24 | 2015-07-24 | A kind of microwave plasma torch device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510442041.0A CN105072793B (en) | 2015-07-24 | 2015-07-24 | A kind of microwave plasma torch device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105072793A true CN105072793A (en) | 2015-11-18 |
| CN105072793B CN105072793B (en) | 2017-11-14 |
Family
ID=54502029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510442041.0A Active CN105072793B (en) | 2015-07-24 | 2015-07-24 | A kind of microwave plasma torch device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105072793B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105898975A (en) * | 2016-06-12 | 2016-08-24 | 浙江大学 | High-power microwave plasma resonant cavity |
| CN106061090A (en) * | 2016-05-31 | 2016-10-26 | 吉林大学 | Secondary-coupling microwave plasma reforming device |
| CN106222711A (en) * | 2016-08-11 | 2016-12-14 | 浙江全世科技有限公司 | The surface treatment method of microwave plasma torch instrument torch pipe |
| CN106793439A (en) * | 2017-02-16 | 2017-05-31 | 浙江全世科技有限公司 | A kind of microwave plasma torch device of automatic ignition |
| CN107426909A (en) * | 2017-05-23 | 2017-12-01 | 浙江全世科技有限公司 | A kind of screening arrangement of microwave plasma torch |
| CN110267425A (en) * | 2019-06-21 | 2019-09-20 | 电子科技大学 | A kind of combined type double coaxial line atmos low-temperature microwave plasma jet source |
| CN112676270A (en) * | 2020-12-24 | 2021-04-20 | 暨南大学 | Cleaning device for mass spectrometer pole piece and method for cleaning mass spectrometer pole piece |
| WO2021226741A1 (en) * | 2020-05-09 | 2021-11-18 | 张麟德 | Surface coupling induced ionization technology, and plasma and plasma device corresponding thereto |
| WO2021243966A1 (en) * | 2020-06-01 | 2021-12-09 | 深圳先进技术研究院 | Atmospheric pressure radio frequency thermal plasma generator based on pre-ionization ignition device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4924061A (en) * | 1987-06-10 | 1990-05-08 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Microwave plasma torch, device comprising such a torch and process for manufacturing powder by the use thereof |
| US20040173316A1 (en) * | 2003-03-07 | 2004-09-09 | Carr Jeffrey W. | Apparatus and method using a microwave source for reactive atom plasma processing |
| US20050242070A1 (en) * | 2002-05-21 | 2005-11-03 | Hammer Michael R | Plasma torch for microwave induced plasmas |
| CN103269561A (en) * | 2013-05-15 | 2013-08-28 | 浙江大学 | Waveguide direct-feed-type microwave plasma torch device |
| CN203851356U (en) * | 2014-04-06 | 2014-09-24 | 浙江大学 | Improved microwave plasma torch device |
| CN104470183A (en) * | 2014-12-04 | 2015-03-25 | 浙江中控研究院有限公司 | Self-tuning magnetron microwave source MPT, self-tuning device and control method |
-
2015
- 2015-07-24 CN CN201510442041.0A patent/CN105072793B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4924061A (en) * | 1987-06-10 | 1990-05-08 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Microwave plasma torch, device comprising such a torch and process for manufacturing powder by the use thereof |
| US20050242070A1 (en) * | 2002-05-21 | 2005-11-03 | Hammer Michael R | Plasma torch for microwave induced plasmas |
| US20040173316A1 (en) * | 2003-03-07 | 2004-09-09 | Carr Jeffrey W. | Apparatus and method using a microwave source for reactive atom plasma processing |
| CN103269561A (en) * | 2013-05-15 | 2013-08-28 | 浙江大学 | Waveguide direct-feed-type microwave plasma torch device |
| CN203851356U (en) * | 2014-04-06 | 2014-09-24 | 浙江大学 | Improved microwave plasma torch device |
| CN104470183A (en) * | 2014-12-04 | 2015-03-25 | 浙江中控研究院有限公司 | Self-tuning magnetron microwave source MPT, self-tuning device and control method |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106061090A (en) * | 2016-05-31 | 2016-10-26 | 吉林大学 | Secondary-coupling microwave plasma reforming device |
| CN106061090B (en) * | 2016-05-31 | 2019-03-12 | 吉林大学 | A kind of secondary coupled microwave plasma reformer |
| CN105898975B (en) * | 2016-06-12 | 2018-07-17 | 浙江大学 | A kind of HIGH-POWERED MICROWAVES plasma resonant |
| CN105898975A (en) * | 2016-06-12 | 2016-08-24 | 浙江大学 | High-power microwave plasma resonant cavity |
| CN106222711A (en) * | 2016-08-11 | 2016-12-14 | 浙江全世科技有限公司 | The surface treatment method of microwave plasma torch instrument torch pipe |
| CN106222711B (en) * | 2016-08-11 | 2018-05-11 | 浙江全世科技有限公司 | The surface treatment method of microwave plasma torch instrument torch pipe |
| CN106793439A (en) * | 2017-02-16 | 2017-05-31 | 浙江全世科技有限公司 | A kind of microwave plasma torch device of automatic ignition |
| CN107426909A (en) * | 2017-05-23 | 2017-12-01 | 浙江全世科技有限公司 | A kind of screening arrangement of microwave plasma torch |
| CN107426909B (en) * | 2017-05-23 | 2019-04-16 | 浙江全世科技有限公司 | A kind of screening arrangement of microwave plasma torch |
| CN110267425A (en) * | 2019-06-21 | 2019-09-20 | 电子科技大学 | A kind of combined type double coaxial line atmos low-temperature microwave plasma jet source |
| WO2021226741A1 (en) * | 2020-05-09 | 2021-11-18 | 张麟德 | Surface coupling induced ionization technology, and plasma and plasma device corresponding thereto |
| WO2021243966A1 (en) * | 2020-06-01 | 2021-12-09 | 深圳先进技术研究院 | Atmospheric pressure radio frequency thermal plasma generator based on pre-ionization ignition device |
| CN112676270A (en) * | 2020-12-24 | 2021-04-20 | 暨南大学 | Cleaning device for mass spectrometer pole piece and method for cleaning mass spectrometer pole piece |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105072793B (en) | 2017-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105072793A (en) | Microwave plasma torch device | |
| CN106304602B (en) | A kind of microwave coupling plasma resonant | |
| CN105122951B (en) | Use the plasma generator of dielectric resonator | |
| US7030979B2 (en) | Microwave plasma source | |
| US6864633B2 (en) | X-ray source employing a compact electron beam accelerator | |
| JP2675561B2 (en) | Plasma trace element analyzer | |
| CN105355528B (en) | A kind of bielectron note terahertz radiation source for crossing mould cascade high-frequency structure | |
| JPH02215038A (en) | Device for analyzing trace element using microwave plasma | |
| CN107068518B (en) | A kind of extension interaction klystron and preparation method thereof | |
| JPH0395899A (en) | Microwave plasma generating device | |
| CA2412529A1 (en) | Plasma source for spectrometry | |
| CN206442573U (en) | A kind of microwave plasma torch device of automatic ignition | |
| CN105979693A (en) | High-power microwave plasma generation device | |
| CN110708853B (en) | Waveguide feed-in type microwave coupling plasma generating device | |
| CN104235859A (en) | Microwave gas cracking device | |
| CN202979451U (en) | Atmospheric-pressure microwave-plasma torch apparatus | |
| US11602040B2 (en) | Waveguide injecting unit | |
| CN109195299A (en) | A kind of periphery wave plasma generating device | |
| CN103114278A (en) | Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device | |
| CN107946156A (en) | Electronic collector of coaxial transit time oscillator capable of working in long pulse state | |
| CN209845424U (en) | High-power high-efficiency multipurpose microwave plasma torch | |
| CN109640505A (en) | A kind of large power high efficiency multipurpose microwave plasma torch | |
| CN114189973B (en) | Microwave plasma torch device with double microwave resonant cavities and application method thereof | |
| CN107069149B (en) | The high-power Cyclotron wave converter coupling input device of X-band | |
| CN106099326B (en) | A kind of magnetic-dipole antenna based on plasma medium modulation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20161227 Address after: 310053, Hangzhou, Binjiang District, No. six and road, a building (North) on the third floor B3155 room Applicant after: ZHEJIANG TRACETECH TECHNOLOGY CO.,LTD. Address before: 310053 Hangzhou Province, Binjiang District Province, No. six and No. 309 Road, the center of science and Technology Park (high tech Zone) () Applicant before: ZHEJIANG SUPCON RESEARCH Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 310053 Room 301, floor 3, building 3, No. 611, Dongguan Road, Binjiang District, Hangzhou, Zhejiang Province Patentee after: Zhongkong Quanshi Technology (Hangzhou) Co.,Ltd. Address before: 310053 Room B3155, 3rd floor, 368 Liuhe Road, Binjiang District, Hangzhou City, Zhejiang Province Patentee before: ZHEJIANG TRACETECH TECHNOLOGY CO.,LTD. |
|
| CP03 | Change of name, title or address |