CN105070646A - Preparation method of low-stress silicon nitride film - Google Patents
Preparation method of low-stress silicon nitride film Download PDFInfo
- Publication number
- CN105070646A CN105070646A CN201510445567.4A CN201510445567A CN105070646A CN 105070646 A CN105070646 A CN 105070646A CN 201510445567 A CN201510445567 A CN 201510445567A CN 105070646 A CN105070646 A CN 105070646A
- Authority
- CN
- China
- Prior art keywords
- reaction chamber
- flow
- gas
- preparation
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a preparation method of a low-stress silicon nitride film, relates to the technical field of semiconductor preparation, and solves the problem that a silicon nitride film prepared in the prior art is high in the stress and cannot meet the requirements for gallium arsenide devices. The low-stress preparation method comprises the following steps that a wafer is loaded into a reaction chamber, the reaction chamber is vacuumized, and the vacuum degree of the reaction chamber is kept at a preset vacuum degree for a preset time length; the temperature value in the reaction chamber is controlled at a preset temperature value and kept for a second preset time length; SiH4 gas of first flow, NH3 gas of second flow, N2 gas of third flow and He gas of fourth flow are input to the reaction chamber, and the reaction chamber is kept for a third preset time length after input of the gases; and RF ignition is carried out to enable the gases to form plasma state and react with one another and generate the silicon nitride film at the surface of the wafer. Thus, the silicon nitride film of low stress can be prepared.
Description
Technical field
The present invention relates to technical field of semiconductor preparation, particularly relate to a kind of preparation method of low stress nitride silicon thin film.
Background technology
In gaas compound semiconductor pHEMT manufacturing process, silicon nitride film hardness is high and be the dielectric of high-k, is a kind of good moisture and Na
+barrier layer.Generally be used as the surface passivation of device and preventing pollution (as dust, steam, acid gas etc.), scratch and particle protection, metal level spacer medium, condenser dielectric etc.
The silicon nitride film that PECVD method (plasma enhanced chemical vapor deposition method) grows can effectively prevent steam and sodium ion from staiing, there is better thermal stability, but the formation by crack is discharged stress by the silicon nitride film of plus external carbuncle during deposition, fissare film makes the surface of film thicker, and impurity also can penetrate in wafer, will cause short circuit time serious, and because of GaAs be piezoelectric, the stress of silicon nitride can reduce the performance parameter of its electric crystal, as saturation current I
dss, puncture voltage B
v, mutual conductance g
m, cut-ff voltage V
pwith microwave property etc.
Deielectric-coating stress intensity is relevant with thickness and medium kind, people sometimes select suitable thickness make compression stress and tensile stress moderate, sometimes the two media (as nitrogenize silicon/oxidative silicon duplicature) that stress is contrary is selected, obtain and answer equilibrium of forces, avoid impacting the performance of device and reliability, but in commercial Application, prepare the increase that two media film can cause processing time and device cost, required cost is higher.
Traditional PECVD nitride deposition mode adopts SiH
4and NH
3or SiH
4and N
2reaction generates silicon nitride film, recently also has test at SiH
4and NH
3basis on add N
2, utilizes nitrogen plasma to bombard and strengthen Si-N bonding force thus improve density of film, but for GaAs pHEMT device, the method is Shortcomings part still, easily generate the silicon nitride film with tensile stress.
Therefore, to prepare in silicon nitride film stress comparatively large in prior art, the technical problem of the requirement of GaAs device is unsuitable for.
Summary of the invention
The present invention is by providing a kind of preparation method of low stress nitride silicon thin film, solve in prior art to prepare stress in silicon nitride film larger, be unsuitable for the technical problem of the requirement of GaAs device, and then achieve the technique effect of the silicon nitride film can preparing low stress.
The technical scheme of the embodiment of the present invention is specially:
A preparation method for low stress nitride silicon thin film, comprises the steps:
S10, vacuumizes described reaction chamber after wafer being loaded into reaction chamber, and the vacuum degree of described reaction chamber is remained on predetermined vacuum degree, and keeps the first preset duration;
S20, controls temperature value in described reaction chamber to preset temperature value, and keeps the second preset duration;
S30, passes into the SiH of first flow respectively in described reaction chamber
4the NH of gas, the second flow
3the N of gas, the 3rd flow
2the He gas of gas and the 4th flow, and after passing into each gas, keep the 3rd preset duration;
S40, carries out radio frequency igniting, makes each gas form plasmoid and react each other, generates silicon nitride film at described crystal column surface.
Further, after S40, also comprise:
N is carried out in described reaction chamber
2purge and after vacuum breaker, wafer is set out.
Further, the scope of described predetermined vacuum degree is 500-2000 millitorr.
Further, the scope of described preset temperature value is 230 DEG C-350 DEG C.
Further, described first flow is 640sccm, and the second flow is 20sccm, and the 3rd flow is 1000sccm, and the 4th flow is 3500sccm.
Further, in S40, the scope of carrying out the radio-frequency power of radio frequency igniting is 120W-190W, and the fluctuating range of radio-frequency power predetermined power value ± 10% scope in.
Further, described first preset duration, the second preset duration and the 3rd preset duration are 10 seconds.
The one or more technical schemes provided in the embodiment of the present invention, at least have following technique effect or advantage:
Due to adopt wafer is loaded into reaction chamber after gas in reaction chamber cavity is vacuumized, and the pressure in this cavity is controlled to predetermined vacuum degree, and after keeping the first preset duration, temperature value in control reaction chamber is to preset temperature value, after keeping the second preset duration, in reaction chamber, pass into the SiH of first flow respectively
4gas, NH
3gas, N
2gas, He gas, after passing into each gas, after keeping the 3rd preset duration, carry out radio frequency igniting, make each gas form plasmoid reacting each other, generate silicon nitride film at crystal column surface, solve in prior art to prepare stress in silicon nitride film larger, be unsuitable for the technical problem of the requirement of GaAs device, achieve the technique effect of the silicon nitride film can preparing low stress.
Accompanying drawing explanation
Fig. 1 is the flow chart of steps of the preparation method of low stress nitride silicon thin film in the embodiment of the present invention.
Embodiment
The present invention is by providing a kind of preparation method of low stress nitride silicon thin film, solve in prior art to prepare stress in silicon nitride film larger, be unsuitable for the technical problem of the requirement of GaAs device, and then achieve the technique effect of the silicon nitride film can preparing low stress.
In order to solve in above-mentioned prior art to prepare in silicon nitride film stress comparatively large, be unsuitable for the technical problem of the requirement of GaAs device, below in conjunction with Figure of description and concrete execution mode, technique scheme being described in detail.
The embodiment of the present invention provides a kind of preparation method of low stress nitride silicon thin film, as shown in Figure 1, comprise following content: S10, after wafer being loaded into reaction chamber, reaction chamber is vacuumized, the vacuum degree of reaction chamber is remained on predetermined vacuum degree, and keep the first preset duration, first, in this reaction chamber cavity, being loaded into wafer, specifically when preparing this silicon nitride film, forming this silicon nitride film on the wafer.Concrete, in S10, this predetermined vacuum degree is specially 500-2000 millitorr (mTorr), certainly, as the case may be, under can also being set in other vacuum degrees, do not do concrete restriction in embodiments of the present invention, pass through vacuum pump extracting gases, control after this vacuum degree remains on predetermined vacuum degree, need maintenance first preset duration, being to ensure that the vacuum degree in this reaction chamber can stablize a period of time, can be specifically 10s during this period of time.Then, perform S20, the temperature value in control reaction chamber is to preset temperature value, and keep the second preset duration, in a particular embodiment, this set temperature value is specially the value between 230 DEG C-350 DEG C, certainly, also this preset temperature value is not limited to, set as the case may be, after temperature reaches this preset temperature value, keep the second Preset Time, such as 10s, to ensure the uniformity of this reaction chamber cavity technological temperature.
In above-mentioned steps, S10 and S20 is that suitable reaction condition built by silicon nitride film for preparing this low stress, then, performs S30, passes into the SiH of first flow in this reaction chamber respectively
4the NH of gas, the second flow
3the N of gas, the 3rd flow
2the He gas of gas, the 4th flow.Concrete SiH
4the first flow of gas is 640sccm, NH
3the second flow be 20sccm, N
2the 3rd flow be the 4th flow of 1000sccm, He be 3500sccm, pass into the gas of above-mentioned each flow, in the process passed into, can carry out adjust flux along with the service time of equipment, the concrete flow regulated changes in the default undulating value of this preset flow, and general fluctuating range is no more than ± and 10%, after passing into each gas, keeping the 3rd preset duration, can be specifically 10s, to ensure the counterdiffusion of each gas phase, reactive material can be uniformly distributed, and is conducive to abundant reaction.
Then, perform S40, carry out radio frequency igniting, make each gas form plasmoid and react each other, generate silicon nitride film at crystal column surface, the deposition rate of the silicon nitride generated like this is 20-25nm/min, deposition thickness can change according to the purposes in device, such as, during as dielectric deposition, thickness is 150nm; When depositing as protective layer, thickness is 80nm.Concrete deposition of thick angle value is according to practical devices designing requirement change, and in technical process, general amplitude of variation is ± 10%.Due to the reacting gas SiH in this reaction chamber
4gas, NH
3gas, N
2he gas is added in gas, this He plasma is utilized to have the Peng Ning reaction coefficient of higher thermal conductivity and Geng Gao, improve the uniformity of reactant and product heat distribution in reaction chamber diameter range, not only well meet uniformity and the consistency requirements of silicon nitride film, and preparation is applicable to the low stress nitride silicon thin film of GaAs pHEMT device.
When the silicon nitride film of above-mentioned this low stress of preparation, adopt single-frequency 13.56MHz or 2.45GHz flat-type plasma PECVD device, radio-frequency power is set as between 120W-190W, and the fluctuating range of this radio-frequency power predetermined power value ± 10% scope in.
Silicon nitride film in the embodiment of the present application on GaAs device has done the test about uniformity, deposition rate and stress, and repeatedly test result is as following table:
As can be seen here, thickness evenness≤2.0% of each test bay, have good uniformity, adopting the stress of UNAXIS stress test testing of equipment silicon nitride film, it is unstressed that test result is that 0 ± 80MPa(0 ± 100MPa is generally considered as), thus obtained silicon nitride film stress is lower, meets the requirement of GaAs pHEMT device.And silicon nitride film deposition rate higher (22.5nm/min), the needs of large-scale industrial production can be met, another silicon nitride film is etched in the BOE etching bath of 7:1, etching result is 19-21nm/min, visible deposition silicon nitride film compact structure, pinhole rate are little, meet the requirement of GaAs device low stress high-quality silicon nitride.Low stress nitride silicon thin film prepared by technical scheme according to the present invention, utilize the heat transfer that helium (He) is good, thus reach the object preparing low stress compact silicon nitride film, make it be applicable to GaAs pHEMT device, improve the Performance And Reliability of device.
Although describe the preferred embodiments of the present invention, those skilled in the art once obtain the basic creative concept of cicada, then can make other change and amendment to these embodiments.So claims are intended to be interpreted as comprising preferred embodiment and falling into all changes and the amendment of the scope of the invention.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (7)
1. a preparation method for low stress nitride silicon thin film, is characterized in that, comprises the steps:
S10, vacuumizes described reaction chamber after wafer being loaded into reaction chamber, and the vacuum degree of described reaction chamber is remained on predetermined vacuum degree, and keeps the first preset duration;
S20, controls temperature value in described reaction chamber to preset temperature value, and keeps the second preset duration;
S30, passes into the SiH of first flow respectively in described reaction chamber
4the NH of gas, the second flow
3the N of gas, the 3rd flow
2the He gas of gas and the 4th flow, and after passing into each gas, keep the 3rd preset duration;
S40, carries out radio frequency igniting, makes each gas form plasmoid and react each other, generates silicon nitride film at described crystal column surface.
2. the preparation method of low stress nitride silicon thin film according to claim 1, is characterized in that, after S40, also comprises:
N is carried out in described reaction chamber
2purge and after vacuum breaker, wafer is set out.
3. the preparation method of low stress nitride silicon thin film according to claim 1, is characterized in that, the scope of described predetermined vacuum degree is 500-2000 millitorr.
4. the preparation method of low stress nitride silicon thin film according to claim 1, is characterized in that, the scope of described preset temperature value is 230 DEG C-350 DEG C.
5. the preparation method of low stress nitride silicon thin film according to claim 1, is characterized in that, described first flow is 640sccm, and the second flow is 20sccm, and the 3rd flow is 1000sccm, and the 4th flow is 3500sccm.
6. the preparation method of low stress nitride silicon thin film according to claim 1, is characterized in that, in S40, the scope of carrying out the radio-frequency power of radio frequency igniting is 120W-190W, and the fluctuating range of radio-frequency power predetermined power value ± 10% scope in.
7. the preparation method of low stress nitride silicon thin film according to claim 1, is characterized in that, described first preset duration, the second preset duration and the 3rd preset duration are 10 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510445567.4A CN105070646B (en) | 2015-07-27 | 2015-07-27 | A kind of preparation method of low stress nitride silicon thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510445567.4A CN105070646B (en) | 2015-07-27 | 2015-07-27 | A kind of preparation method of low stress nitride silicon thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105070646A true CN105070646A (en) | 2015-11-18 |
| CN105070646B CN105070646B (en) | 2017-11-10 |
Family
ID=54499984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510445567.4A Active CN105070646B (en) | 2015-07-27 | 2015-07-27 | A kind of preparation method of low stress nitride silicon thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105070646B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448668A (en) * | 2015-12-30 | 2016-03-30 | 西安立芯光电科技有限公司 | Method for improving adhesion of SiNx on GaAs wafer |
| CN108493760A (en) * | 2018-04-10 | 2018-09-04 | 青岛海信宽带多媒体技术有限公司 | A kind of Si3N4/ SiON composite membranes, chip of laser and preparation method |
| CN110582838A (en) * | 2017-09-27 | 2019-12-17 | 奥塔装置公司 | High growth rate deposition of III/V materials |
| CN116254518A (en) * | 2023-05-10 | 2023-06-13 | 上海陛通半导体能源科技股份有限公司 | Preparation method of silicon nitride film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6165917A (en) * | 1995-11-30 | 2000-12-26 | International Business Machines Corporation | Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD |
| CN1504819A (en) * | 2002-12-04 | 2004-06-16 | Lg.飞利浦Lcd有限公司 | Liquid crystal display device and manufacturing method thereof |
| CN103022248A (en) * | 2012-11-27 | 2013-04-03 | 东方日升新能源股份有限公司 | Photovoltaic cell with three layers of antireflective films in composite structures and composite coating method thereof |
-
2015
- 2015-07-27 CN CN201510445567.4A patent/CN105070646B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6165917A (en) * | 1995-11-30 | 2000-12-26 | International Business Machines Corporation | Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD |
| CN1504819A (en) * | 2002-12-04 | 2004-06-16 | Lg.飞利浦Lcd有限公司 | Liquid crystal display device and manufacturing method thereof |
| CN103022248A (en) * | 2012-11-27 | 2013-04-03 | 东方日升新能源股份有限公司 | Photovoltaic cell with three layers of antireflective films in composite structures and composite coating method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448668A (en) * | 2015-12-30 | 2016-03-30 | 西安立芯光电科技有限公司 | Method for improving adhesion of SiNx on GaAs wafer |
| CN105448668B (en) * | 2015-12-30 | 2018-09-14 | 西安立芯光电科技有限公司 | A method of improving SiNx adhesivenesses on GaAs wafers |
| CN110582838A (en) * | 2017-09-27 | 2019-12-17 | 奥塔装置公司 | High growth rate deposition of III/V materials |
| CN108493760A (en) * | 2018-04-10 | 2018-09-04 | 青岛海信宽带多媒体技术有限公司 | A kind of Si3N4/ SiON composite membranes, chip of laser and preparation method |
| CN116254518A (en) * | 2023-05-10 | 2023-06-13 | 上海陛通半导体能源科技股份有限公司 | Preparation method of silicon nitride film |
| CN116254518B (en) * | 2023-05-10 | 2023-08-18 | 上海陛通半导体能源科技股份有限公司 | Preparation method of silicon nitride film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105070646B (en) | 2017-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101379089B1 (en) | Metal hard mask fabrication | |
| US8334219B2 (en) | Method of forming stress-tuned dielectric film having Si-N bonds by modified PEALD | |
| KR101644732B1 (en) | Aspect ratio dependent deposition to improve gate spacer profile, fin-loss and hardmask-loss for finfet scheme | |
| EP2657363B1 (en) | Method of depositing silicon dioxide films | |
| CN105070646A (en) | Preparation method of low-stress silicon nitride film | |
| US20110057326A1 (en) | Method for forming through electrode and semiconductor device | |
| US11417534B2 (en) | Selective material removal | |
| KR20080082443A (en) | Method of forming integrated circuit structures using insulator deposition and insulator gap filling techniques | |
| CN103839800A (en) | Method for producing silicon nitride | |
| WO2020079903A1 (en) | Method for forming nitride film and method for manufacturing semiconductor device | |
| CN101736314B (en) | Formation method of silicon oxide film and metal-insulator-metal capacitor | |
| CN104599961B (en) | A kind of method for reducing silicon oxynitride film surface charge | |
| US9418835B2 (en) | Methods for manufacturing semiconductor devices | |
| US20060079100A1 (en) | High density plasma grown silicon nitride | |
| CN101393869A (en) | Forming method for silicon nitride film and contact etching stop layer | |
| CN112760615A (en) | Silicon dioxide film and low-temperature preparation method thereof | |
| US8426288B2 (en) | Method for improving capacitance uniformity in a MIM device | |
| US20130052365A1 (en) | Dielectric film defect reduction | |
| US11942320B2 (en) | Method of manufacturing semiconductor structure | |
| CN106098611B (en) | The production method of wafer scale uniaxial strain SGOI based on silicon nitride stress film and scale effect | |
| CN103117201B (en) | The forming method of PECVD device and semiconductor device | |
| JP2004119938A (en) | Manufacturing method for a silicon oxide film and apparatus thereof | |
| CN111933566A (en) | Method for forming shallow trench isolation structure | |
| CN112670173A (en) | Method for forming copper metal layer and semiconductor structure | |
| CN102312225B (en) | Method for depositing silicon oxide on silicon nitride surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 610000 Sichuan, Shuangliu County, Southwest Airport Economic Development Zone, the Internet of things industry park Applicant after: CHENGDU HIWAFER TECHNOLOGY CO., LTD. Address before: 610000 Sichuan, Shuangliu County, Southwest Airport Economic Development Zone, the Internet of things industry park Applicant before: CHENGDU GASTONE TECHNOLOGY CO., LTD. |
|
| COR | Change of bibliographic data | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |