CN105448668A - Method for improving adhesion of SiNx on GaAs wafer - Google Patents
Method for improving adhesion of SiNx on GaAs wafer Download PDFInfo
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- CN105448668A CN105448668A CN201511023964.9A CN201511023964A CN105448668A CN 105448668 A CN105448668 A CN 105448668A CN 201511023964 A CN201511023964 A CN 201511023964A CN 105448668 A CN105448668 A CN 105448668A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
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Abstract
The invention provides a method for improving adhesion of SiNx on a GaAs wafer. The method comprises the following steps: before a main process, introducing N2 and NH3 with a strong activity when plasma pre-cleaning is performed on a wafer surface, using a plasma of the N2 to perform physical cleaning on the GaAs wafer surface, using a plasma of the NH3 with the strong activity and an oxide layer of the wafer surface to perform a chemical reaction and exposing a fresh GaAs surface, and carrying out the growth of a subsequent SiN thin film on this basis. The technical scheme of the invention can more effectively remove contamination and the oxide layer on the surface, and improve the adhesion between a SiNx thin film and a substrate to a maximum extent. Technological parameters are optimized especially, and the optimum allocation of the NH3 and other parameters in a pre-cleaning link is different from a thin film deposition link, and the process after comprehensive optimization can completely avoid the film tilt phenomenon in a cleavage process, so that the yield and performance of products can be improved.
Description
Technical field
The present invention relates to a kind of semiconductor substrate surface processing method.
Background technology
At semicon industry, wafer substrate grows SiNx as dielectric film, for the passivation, isolation, capacitor dielectric etc. of semiconductor device.And the adhesiveness between SiNx and substrate considers a major criterion of dielectric film deposition quality.Usual way is before the main technique of thin film deposition starts, pass into inert gas (such as argon gas and nitrogen) glow discharge, utilizes plasma bombardment substrate surface, to reach the object on clean substrate surface.Then, pass into SiH4, NH3, N2 and He when thin film deposition, utilize nitrogen plasma to bombard and strengthen Si-N bonding force, other reacting gass decompose more completely to utilize the metastable state of He to promote, thus the adhesion of enhanced film.
But in the preparation technology of semiconductor laser chip, need the chip depositing SiNx film to be cleaved into little bar bar, the adhesion of Cleaving Process to SiNx film and wafer substrate requires very harsh.Applicant finds in practice, at GaAs (GaAs) Grown SiNx as dielectric film, by changing the power of N2 gas flow and glow discharge in cleaning process, and the flow of each gas, proportioning, the technological parameter such as RF power and underlayer temperature all cannot reach satisfied adhesiving effect in film deposition process, still there will be the phenomenon of film tilting in cleavage process process, thus have a strong impact on rate of finished products and the performance of product.
Summary of the invention
In order to solve the problem that SiNx film prepared by the traditional handicraft film when subsequent wafer cleavage tilts, the present invention proposes one and improving SiNx adhering method on GaAs wafer.
Technical scheme of the present invention is as follows:
One improves SiNx adhering method on GaAs wafer, comprises the following steps:
Step one: GaAs wafer is put in PECVD reaction chamber, vacuumizes;
Step 2: pass into N2 in reaction chamber chamber is purged, vacuumize again afterwards;
Step 3: pass into N2 and NH3, the flow-rate ratio scope that the range of flow wherein passing into N2 is 130 ~ 390sccm, the range of flow of NH3 is 10 ~ 50sccm, N2 and NH3 is 6:1 ~ 7:1;
Step 4: treat chamber inner pressure strong stability, radio frequency is lighted a fire, and makes N2 and NH3 form plasma and carries out physical cleaning and chemical cleaning to crystal column surface respectively;
Step 5: chamber is vacuumized, and repeatedly purge;
Step 6: pass into SiH4, NH3, N2 and He, after voltage stabilizing, radio frequency igniting, carries out SiNx film growth.
On the basis of above scheme, the present invention has also made following important optimization to concrete technology parameter:
The flow passing into N2 in step 3 is the flow of 270sccm, NH3 is 40sccm.
In step 4, radio-frequency power is 45-55W.
In step 4, the radio frequency retention time is 30s.
Pass into N2 and NH3 in step 3 and make stable lasting more than the 1min of pressure.
The flow passing into N2 in step 2 is 500sccm.
Technique effect of the present invention is as follows:
Before main technique starts, N2 and active stronger NH3 is passed into when carrying out Plasma pre-cleaning to crystal column surface, the plasma of N2 is utilized to carry out physical cleaning to GaAs crystal column surface, utilize the active stronger plasma of NH3 and the oxide layer of crystal column surface to carry out chemical reaction and expose fresh GaAs surface, carry out the growth of follow-up SiN film on this basis.This technical scheme more effectively can remove contamination and the oxide layer on surface, improves the adhesiveness between SiNx film and substrate to the full extent.
The present invention is also optimized technological parameter especially, in prerinse link, the isoparametric best configuration of NH3 is different from thin film deposition link, technique after complex optimum can avoid the phenomenon that in Cleaving Process, film tilts completely, thus improves rate of finished products and the performance of product.
Accompanying drawing explanation
Fig. 1 is the film layer structure of cleavage chip.In figure, 1-GaAs wafer, 2-SiNx film, 3-metal film.
Fig. 2 is for improving front cleavage chip photo (embodiment one).
Fig. 3 is for improving rear cleavage chip photo (embodiment six).
Embodiment
Embodiment one (control group):
Step one: GaAs wafer is put in PECVD reaction chamber, vacuumizes;
Step 2: pass into N2500sccm in reaction chamber chamber is purged, then vacuumize;
Step 3: the N2 passing into prewashed 260sccm, stablizes 1min, opens radio-frequency power 50w, starts prerinse, continues 60s;
Step 4: radio frequency is lighted a fire, makes N2 form plasma and carries out physical cleaning and chemical cleaning to crystal column surface respectively, and keep certain hour;
Step 5: chamber is vacuumized, and repeatedly purge;
Step 6: pass into SiH4, NH3, N2 and He, after voltage stabilizing, radio frequency igniting, carries out SiNx film growth.
Through experiment, the rate of finished products (with film tilting for considering) of the program is almost nil.
Embodiment two (control group):
Step one: GaAs wafer is put in PECVD reaction chamber, vacuumizes;
Step 2: pass into N2500sccm in reaction chamber chamber is purged, then vacuumize;
Step 3: N2 and 40sccmN2O passing into prewashed 280sccm, stablizes 1min, opens radio-frequency power 53w, starts prerinse, continues 30s;
Step 4: radio frequency is lighted a fire, makes N2 and NO2 form plasma and carries out physical cleaning and chemical cleaning to crystal column surface respectively, and keep certain hour;
Step 5: chamber is vacuumized, and repeatedly purge;
Step 6: pass into SiH4, NH3, N2 and He, after voltage stabilizing, radio frequency igniting, carries out SiNx film growth.
Through experiment, the rate of finished products (with film tilting for considering) of the program is 20%.
Embodiment three (control group: the prerinse stage uses N2 and NH3 passes into the conventional amount used of flow with reference to the main technique of film growth):
Step one: GaAs wafer is put in PECVD reaction chamber, vacuumizes;
Step 2: pass into N2500sccm in reaction chamber chamber is purged, then vacuumize;
Step 3: N2 and 8sccmNH3 passing into prewashed 850sccm, stablizes 1min, opens radio-frequency power 60w, starts prerinse, continues 30s;
Step 4: radio frequency is lighted a fire, makes N2 and NH3 form plasma and carries out physical cleaning and chemical cleaning to crystal column surface respectively, and keep certain hour;
Step 5: chamber is vacuumized, and repeatedly purge;
Step 6: pass into SiH4, NH3, N2 and He, after voltage stabilizing, radio frequency igniting, carries out SiNx film growth.
Through experiment, the rate of finished products (with film tilting for considering) of the program, about 25%.Visible, use the combination of N2 and NH3 in prerinse link, if consumption conveniently, effect there is no essential difference with using the combination (embodiment two) of N2 and N2O.
Embodiment four (embodiment of the present invention):
Step one: GaAs wafer is put in PECVD reaction chamber, vacuumizes;
Step 2: pass into N2500sccm in reaction chamber chamber is purged, then vacuumize;
Step 3: N2 and 10sccmNH3 passing into prewashed 270sccm, stablizes 1min, opens radio-frequency power 50w, starts prerinse, continues 30s;
Step 4: radio frequency is lighted a fire, makes N2 and NH3 form plasma and carries out physical cleaning and chemical cleaning to crystal column surface respectively, and keep certain hour;
Step 5: chamber is vacuumized, and repeatedly purge;
Step 6: pass into SiH4, NH3, N2 and He, after voltage stabilizing, radio frequency igniting, carries out SiNx film growth.
Through experiment, the rate of finished products (with film tilting for considering) of the program increases, about 50%.
Embodiment five (embodiment of the present invention):
Step one: GaAs wafer is put in PECVD reaction chamber, vacuumizes;
Step 2: pass into N2500sccm in reaction chamber chamber is purged, then vacuumize;
Step 3: N2 and 30sccmNH3 passing into prewashed 180sccm, stablizes 1min, opens radio-frequency power 45w, starts prerinse, continues 30s;
Step 4: radio frequency is lighted a fire, makes N2 and NH3 form plasma and carries out physical cleaning and chemical cleaning to crystal column surface respectively, and keep certain hour;
Step 5: chamber is vacuumized, and repeatedly purge;
Step 6: pass into SiH4, NH3, N2 and He, after voltage stabilizing, radio frequency igniting, carries out SiNx film growth.
Through experiment, the rate of finished products (with film tilting for considering) of the program can reach 80%.
Embodiment six (preferred embodiment):
Step one: GaAs wafer is put in PECVD reaction chamber, vacuumizes;
Step 2: pass into N2500sccm in reaction chamber chamber is purged, then vacuumize;
Step 3: N2 and 40sccmNH3 passing into prewashed 270sccm, stablizes 1min, opens radio-frequency power 52w, starts prerinse, continues 30s;
Step 4: radio frequency is lighted a fire, makes N2 and NH3 form plasma and carries out physical cleaning and chemical cleaning to crystal column surface respectively, and keep certain hour;
Step 5: chamber is vacuumized, and repeatedly purge;
Step 6: pass into SiH4, NH3, N2 and He, after voltage stabilizing, radio frequency igniting, carries out SiNx film growth.
Through experiment, the rate of finished products (with film tilting for considering) of the program can reach 100%.
Embodiment seven (embodiment of the present invention):
Step one: GaAs wafer is put in PECVD reaction chamber, vacuumizes;
Step 2: pass into N2500sccm in reaction chamber chamber is purged, then vacuumize;
Step 3: N2 and 50sccmNH3 passing into prewashed 350sccm, stablizes 1min, opens radio-frequency power 55w, starts prerinse, continues 30s;
Step 4: radio frequency is lighted a fire, makes N2 and NH3 form plasma and carries out physical cleaning and chemical cleaning to crystal column surface respectively, and keep certain hour;
Step 5: chamber is vacuumized, and repeatedly purge;
Step 6: pass into SiH4, NH3, N2 and He, after voltage stabilizing, radio frequency igniting, carries out SiNx film growth.
Through experiment, the rate of finished products (with film tilting for considering) of the program can reach 85%.
Claims (6)
1. improve SiNx adhering method on GaAs wafer, it is characterized in that comprising the following steps:
Step one: GaAs wafer is put in PECVD reaction chamber, vacuumizes;
Step 2: pass into N2 in reaction chamber chamber is purged, vacuumize again afterwards;
Step 3: pass into N2 and NH3, the flow-rate ratio scope that the range of flow wherein passing into N2 is 130 ~ 390sccm, the range of flow of NH3 is 10 ~ 50sccm, N2 and NH3 is 6:1 ~ 7:1;
Step 4: treat chamber inner pressure strong stability, radio frequency is lighted a fire, and makes N2 and NH3 form plasma and carries out physical cleaning and chemical cleaning to crystal column surface respectively;
Step 5: chamber is vacuumized, and repeatedly purge;
Step 6: pass into SiH4, NH3, N2 and He, after voltage stabilizing, radio frequency igniting, carries out SiNx film growth.
2. method according to claim 1, is characterized in that: the flow passing into N2 in step 3 is the flow of 270sccm, NH3 is 40sccm.
3. method according to claim 2, is characterized in that: in step 4, radio-frequency power is 45-55W.
4. method according to claim 3, is characterized in that: in step 4, the radio frequency retention time is 30s.
5. method according to claim 1, is characterized in that: pass into N2 and NH3 in step 3 and make stable lasting more than the 1min of pressure.
6. method according to claim 1, is characterized in that: the flow passing into N2 in step 2 is 500sccm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201511023964.9A CN105448668B (en) | 2015-12-30 | 2015-12-30 | A method of improving SiNx adhesivenesses on GaAs wafers |
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| CN201511023964.9A CN105448668B (en) | 2015-12-30 | 2015-12-30 | A method of improving SiNx adhesivenesses on GaAs wafers |
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| CN105448668A true CN105448668A (en) | 2016-03-30 |
| CN105448668B CN105448668B (en) | 2018-09-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115896756A (en) * | 2022-11-18 | 2023-04-04 | 福建中科光芯光电科技有限公司 | SiO for improving InGaAs surface deposition 2 Method of exfoliation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114574A (en) * | 2006-07-24 | 2008-01-30 | 株式会社上睦可 | Method for manufacturing bonded soi wafer and bonded soi wafer manufactured thereby |
| US20100326511A1 (en) * | 2008-02-12 | 2010-12-30 | Tokyo Electron Limited | Solar cell wherein solar photovolatic thin film is directly formed on base |
| CN102903626A (en) * | 2012-10-29 | 2013-01-30 | 镇江大全太阳能有限公司 | Silicon nitride coating method with silicon wafer surface cleaning function |
| CN105070646A (en) * | 2015-07-27 | 2015-11-18 | 成都嘉石科技有限公司 | Preparation method of low-stress silicon nitride film |
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- 2015-12-30 CN CN201511023964.9A patent/CN105448668B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114574A (en) * | 2006-07-24 | 2008-01-30 | 株式会社上睦可 | Method for manufacturing bonded soi wafer and bonded soi wafer manufactured thereby |
| US20100326511A1 (en) * | 2008-02-12 | 2010-12-30 | Tokyo Electron Limited | Solar cell wherein solar photovolatic thin film is directly formed on base |
| CN102903626A (en) * | 2012-10-29 | 2013-01-30 | 镇江大全太阳能有限公司 | Silicon nitride coating method with silicon wafer surface cleaning function |
| CN105070646A (en) * | 2015-07-27 | 2015-11-18 | 成都嘉石科技有限公司 | Preparation method of low-stress silicon nitride film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115896756A (en) * | 2022-11-18 | 2023-04-04 | 福建中科光芯光电科技有限公司 | SiO for improving InGaAs surface deposition 2 Method of exfoliation |
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