CN105448668B - A method of improving SiNx adhesivenesses on GaAs wafers - Google Patents

A method of improving SiNx adhesivenesses on GaAs wafers Download PDF

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CN105448668B
CN105448668B CN201511023964.9A CN201511023964A CN105448668B CN 105448668 B CN105448668 B CN 105448668B CN 201511023964 A CN201511023964 A CN 201511023964A CN 105448668 B CN105448668 B CN 105448668B
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passed
sinx
gaas
flow
plasma
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CN105448668A (en
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任占强
宋克昌
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XI'AN LIXIN OPTOELECTRONIC TECHNOLOGY Co Ltd
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XI'AN LIXIN OPTOELECTRONIC TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention proposes a kind of method improving SiNx adhesivenesses on GaAs wafers.The present invention is before main technique starts, N2 and the stronger NH3 of activity are passed through when carrying out Plasma pre-cleaning to crystal column surface, physical cleaning is carried out to GaAs crystal column surfaces using the plasma of N2, chemical reaction is carried out using the plasma of the stronger NH3 of activity and the oxide layer of crystal column surface and exposes the fresh surfaces GaAs, carries out the growth of follow-up SiN films on this basis.The technical solution can more effectively remove contamination and the oxide layer on surface, improve the adhesiveness between SiNx films and substrate to the full extent.Wherein also especially technological parameter is optimized, the best configuration of the parameters such as NH3 is different from film deposition link in prerinse link, technique after complex optimum can avoid the phenomenon that film tilts in Cleaving Process completely, to improve the yield rate and performance of product.

Description

A method of improving SiNx adhesivenesses on GaAs wafers
Technical field
The present invention relates to a kind of semiconductor substrate surface processing methods.
Background technology
In semicon industry, in wafer substrate growing SiNx is used as dielectric film, be used for semiconductor devices passivation, every From, capacitor dielectric etc..And the adhesiveness between SiNx and substrate is to consider a major criterion of dielectric film deposition quality.It is logical Normal way is to deposit before main technique starts to be passed through inert gas (such as argon gas and nitrogen) glow discharge in film, utilizes plasma Body bombards substrate surface, to achieve the purpose that clean substrate surface.Then, it is passed through SiH4, NH3, N2 and He when film deposits, Enhance Si-N bonding forces using nitrogen plasma bombardment, promotes other reaction gas more completely to divide using the metastable state of He Solution, to the adhesion strength of enhanced film.
However, in the preparation process of semiconductor laser chip, need the chip for depositing SiNx films being cleaved into small Bar item, Cleaving Process requires the adhesion strength of SiNx films and wafer substrate extremely harsh.Applicant in practice, it has been found that GaAs (GaAs) Grown SiNx is as dielectric film, by changing N2 gas flows and glow discharge in cleaning process Power and film deposition process in the technological parameters such as flow, proportioning, RF power and underlayer temperature of each gas can not reach To satisfied adhesiving effect, still will appear the phenomenon that film tilts in cleavage process process, to seriously affected product at Product rate and performance.
Invention content
In order to solve the problems, such as that SiNx films prepared by the traditional handicraft film in subsequent wafer cleavage tilts, the present invention carries A kind of method improving SiNx adhesivenesses on GaAs wafers is gone out.
Technical scheme is as follows：
A method of improving SiNx adhesivenesses on GaAs wafers, includes the following steps：
Step 1：GaAs wafers are put into PECVD reaction chambers, are vacuumized；
Step 2：It is passed through N2 into reaction chamber to purge chamber, vacuumizes again later；
Step 3：It is passed through N2 and NH3, wherein the range of flow for being passed through N2 is 130~390sccm, the range of flow of NH3 is The flow-rate ratio of 10~50sccm, N2 and NH3 ranging from 6:1~7:1；
Step 4：Wait for that chamber inner pressure strong stability, radio frequency igniting make N2 and NH3 form plasma respectively to crystal column surface Carry out physical cleaning and chemical cleaning；
Step 5：Chamber is vacuumized, and is repeatedly purged；
Step 6：It is passed through SiH4, NH3, N2 and He, radio frequency is lighted a fire after voltage stabilizing, carries out SiNx film growths.
On the basis of above scheme, the present invention has also made following important optimization to specific process parameter：
The flow that N2 is passed through in step 3 is that the flow of 270sccm, NH3 are 40sccm.
Radio-frequency power is 45-55W in step 4.
The radio frequency retention time is 30s in step 4.
N2 and NH3 is passed through in step 3 makes pressure stablize lasting 1min or more.
The flow that N2 is passed through in step 2 is 500sccm.
The technique effect of the present invention is as follows：
Before main technique starts, N2 and the stronger NH3 of activity, profit are passed through when carrying out Plasma pre-cleaning to crystal column surface Physical cleaning is carried out to GaAs crystal column surfaces with the plasma of N2, utilizes the plasma and wafer table of the stronger NH3 of activity The oxide layer in face carries out chemical reaction and exposes the fresh surfaces GaAs, carries out the growth of follow-up SiN films on this basis.The skill Art scheme can more effectively remove contamination and the oxide layer on surface, improve to the full extent viscous between SiNx films and substrate Attached property.
The present invention is also especially optimized technological parameter, and the best configuration of the parameters such as NH3 is different in prerinse link Link is deposited in film, the technique after complex optimum can avoid the phenomenon that film tilts in Cleaving Process completely, to improve The yield rate and performance of product.
Description of the drawings
Fig. 1 is the film layer structure of cleavage chip.In figure, 1-GaAs wafers, 2-SiNx films, 3- metal films.
Fig. 2 is cleavage chip photo (embodiment one) before improving.
Fig. 3 is cleavage chip photo (embodiment six) after improving.
Specific implementation mode
Embodiment one (control group)：
Step 1：GaAs wafers are put into PECVD reaction chambers, are vacuumized；
Step 2：It is passed through N2500sccm into reaction chamber to purge chamber, then vacuumizes；
Step 3：It is passed through the N2 of prewashed 260sccm, stablizes 1min, opens radio-frequency power 50w, starts prerinse, holds Continuous 60s；
Step 4：Radio frequency is lighted a fire, and so that N2 is formed plasma and is carried out physical cleaning and chemical cleaning to crystal column surface respectively, And kept for certain time；
Step 5：Chamber is vacuumized, and is repeatedly purged；
Step 6：It is passed through SiH4, NH3, N2 and He, radio frequency is lighted a fire after voltage stabilizing, carries out SiNx film growths.
Through experiment, the yield rate (being to consider with film tilting) of the program is almost nil.
Embodiment two (control group)：
Step 1：GaAs wafers are put into PECVD reaction chambers, are vacuumized；
Step 2：It is passed through N2500sccm into reaction chamber to purge chamber, then vacuumizes；
Step 3：N2 the and 40sccm N2O of prewashed 280sccm are passed through, 1min is stablized, open radio-frequency power 53w, Start prerinse, continues 30s；
Step 4：Radio frequency is lighted a fire, and so that N2 and NO2 is formed plasma and is carried out physical cleaning and chemistry to crystal column surface respectively Cleaning, and kept for certain time；
Step 5：Chamber is vacuumized, and is repeatedly purged；
Step 6：It is passed through SiH4, NH3, N2 and He, radio frequency is lighted a fire after voltage stabilizing, carries out SiNx film growths.
Through experiment, the yield rate (being to consider with film tilting) of the program is 20%.
Three (control group of embodiment：The prerinse stage uses N2 and NH3, is passed through flow and grows main technique with reference to film Conventional amount used)：
Step 1：GaAs wafers are put into PECVD reaction chambers, are vacuumized；
Step 2：It is passed through N2500sccm into reaction chamber to purge chamber, then vacuumizes；
Step 3：N2 the and 8sccm NH3 of prewashed 850sccm are passed through, 1min is stablized, radio-frequency power 60w is opened, opens Beginning prerinse continues 30s；
Step 4：Radio frequency is lighted a fire, and so that N2 and NH3 is formed plasma and is carried out physical cleaning and chemistry to crystal column surface respectively Cleaning, and kept for certain time；
Step 5：Chamber is vacuumized, and is repeatedly purged；
Step 6：It is passed through SiH4, NH3, N2 and He, radio frequency is lighted a fire after voltage stabilizing, carries out SiNx film growths.
Through experiment, the yield rate (being to consider with film tilting) of the program, 25% or so.As it can be seen that in prerinse link Using the combination of N2 and NH3, if according to conventional dosage, effect is had no with using the combination (embodiment two) of N2 and N2O Essential difference.
Embodiment four (embodiment of the present invention)：
Step 1：GaAs wafers are put into PECVD reaction chambers, are vacuumized；
Step 2：It is passed through N2500sccm into reaction chamber to purge chamber, then vacuumizes；
Step 3：N2 the and 10sccm NH3 of prewashed 270sccm are passed through, 1min is stablized, open radio-frequency power 50w, Start prerinse, continues 30s；
Step 4：Radio frequency is lighted a fire, and so that N2 and NH3 is formed plasma and is carried out physical cleaning and chemistry to crystal column surface respectively Cleaning, and kept for certain time；
Step 5：Chamber is vacuumized, and is repeatedly purged；
Step 6：It is passed through SiH4, NH3, N2 and He, radio frequency is lighted a fire after voltage stabilizing, carries out SiNx film growths.
Through experiment, the yield rate (being to consider with film tilting) of the program increases, 50% or so.
Embodiment five (embodiment of the present invention)：
Step 1：GaAs wafers are put into PECVD reaction chambers, are vacuumized；
Step 2：It is passed through N2500sccm into reaction chamber to purge chamber, then vacuumizes；
Step 3：N2 the and 30sccm NH3 of prewashed 180sccm are passed through, 1min is stablized, open radio-frequency power 45w, Start prerinse, continues 30s；
Step 4：Radio frequency is lighted a fire, and so that N2 and NH3 is formed plasma and is carried out physical cleaning and chemistry to crystal column surface respectively Cleaning, and kept for certain time；
Step 5：Chamber is vacuumized, and is repeatedly purged；
Step 6：It is passed through SiH4, NH3, N2 and He, radio frequency is lighted a fire after voltage stabilizing, carries out SiNx film growths.
Through experiment, the yield rate (being to consider with film tilting) of the program can reach 80%.
Embodiment six (preferred embodiment)：
Step 1：GaAs wafers are put into PECVD reaction chambers, are vacuumized；
Step 2：It is passed through N2500sccm into reaction chamber to purge chamber, then vacuumizes；
Step 3：N2 the and 40sccm NH3 of prewashed 270sccm are passed through, 1min is stablized, open radio-frequency power 52w, Start prerinse, continues 30s；
Step 4：Radio frequency is lighted a fire, and so that N2 and NH3 is formed plasma and is carried out physical cleaning and chemistry to crystal column surface respectively Cleaning, and kept for certain time；
Step 5：Chamber is vacuumized, and is repeatedly purged；
Step 6：It is passed through SiH4, NH3, N2 and He, radio frequency is lighted a fire after voltage stabilizing, carries out SiNx film growths.
Through experiment, the yield rate (being to consider with film tilting) of the program can reach 100%.
Embodiment seven (embodiment of the present invention)：
Step 1：GaAs wafers are put into PECVD reaction chambers, are vacuumized；
Step 2：It is passed through N2500sccm into reaction chamber to purge chamber, then vacuumizes；
Step 3：N2 the and 50sccm NH3 of prewashed 350sccm are passed through, 1min is stablized, open radio-frequency power 55w, Start prerinse, continues 30s；
Step 4：Radio frequency is lighted a fire, and so that N2 and NH3 is formed plasma and is carried out physical cleaning and chemistry to crystal column surface respectively Cleaning, and kept for certain time；
Step 5：Chamber is vacuumized, and is repeatedly purged；
Step 6：It is passed through SiH4, NH3, N2 and He, radio frequency is lighted a fire after voltage stabilizing, carries out SiNx film growths.
Through experiment, the yield rate (being to consider with film tilting) of the program can reach 85%.

Claims (6)

1. a kind of method improving SiNx adhesivenesses on GaAs wafers, it is characterised in that include the following steps：
Step 1：GaAs wafers are put into PECVD reaction chambers, are vacuumized；
Step 2：It is passed through N into PECVD reaction chambers2, PECVD reaction chambers are purged, are vacuumized again later；
Step 3：It is passed through N2And NH3, wherein being passed through N2Range of flow be 130~390sccm, NH3Range of flow be 10~ 50sccm, N2And NH3Flow-rate ratio ranging from 6:1~7:1；
Step 4：Wait for that PECVD reaction chamber internal pressure strong stabilities, radio frequency igniting make N2And NH3Plasma is formed respectively to GaAs Crystal column surface carries out physical cleaning and chemical cleaning；
Step 5：PECVD reaction chambers are vacuumized, and are repeatedly purged；
Step 6：It is passed through SiH4、NH3、N2And He, radio frequency is lighted a fire after voltage stabilizing, carries out SiNx film growths.
2. according to the method described in claim 1, it is characterized in that：N is passed through in step 32Flow be 270sccm, NH3Stream Amount is 40sccm.
3. according to the method described in claim 2, it is characterized in that：Radio-frequency power is 45-55W in step 4.
4. according to the method described in claim 3, it is characterized in that：The radio frequency retention time is 30s in step 4.
5. according to the method described in claim 1, it is characterized in that：N is passed through in step 32And NH3So that pressure is stablized and continues 1min More than.
6. according to the method described in claim 1, it is characterized in that：N is passed through in step 22Flow be 500sccm.
CN201511023964.9A 2015-12-30 2015-12-30 A method of improving SiNx adhesivenesses on GaAs wafers Active CN105448668B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101114574A (en) * 2006-07-24 2008-01-30 株式会社上睦可 Method for manufacturing bonded soi wafer and bonded soi wafer manufactured thereby
CN102903626A (en) * 2012-10-29 2013-01-30 镇江大全太阳能有限公司 Silicon nitride coating method with silicon wafer surface cleaning function
CN105070646A (en) * 2015-07-27 2015-11-18 成都嘉石科技有限公司 Preparation method of low-stress silicon nitride film

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JP5219538B2 (en) * 2008-02-12 2013-06-26 大成建設株式会社 Solar cell with photovoltaic thin film directly formed on substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101114574A (en) * 2006-07-24 2008-01-30 株式会社上睦可 Method for manufacturing bonded soi wafer and bonded soi wafer manufactured thereby
CN102903626A (en) * 2012-10-29 2013-01-30 镇江大全太阳能有限公司 Silicon nitride coating method with silicon wafer surface cleaning function
CN105070646A (en) * 2015-07-27 2015-11-18 成都嘉石科技有限公司 Preparation method of low-stress silicon nitride film

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