CN105067165A - 单晶硅传感器芯片的生产工艺 - Google Patents
单晶硅传感器芯片的生产工艺 Download PDFInfo
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- CN105067165A CN105067165A CN201510421946.XA CN201510421946A CN105067165A CN 105067165 A CN105067165 A CN 105067165A CN 201510421946 A CN201510421946 A CN 201510421946A CN 105067165 A CN105067165 A CN 105067165A
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- monocrystalline silicon
- silicon substrate
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- 238000002161 passivation Methods 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 63
- 238000005516 engineering process Methods 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 230000001419 dependent effect Effects 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 230000013011 mating Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
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Priority Applications (1)
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CN201510421946.XA CN105067165B (zh) | 2015-07-19 | 2015-07-19 | 单晶硅传感器芯片的生产工艺 |
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CN201510421946.XA CN105067165B (zh) | 2015-07-19 | 2015-07-19 | 单晶硅传感器芯片的生产工艺 |
Publications (2)
Publication Number | Publication Date |
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CN105067165A true CN105067165A (zh) | 2015-11-18 |
CN105067165B CN105067165B (zh) | 2018-02-02 |
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CN201510421946.XA Active CN105067165B (zh) | 2015-07-19 | 2015-07-19 | 单晶硅传感器芯片的生产工艺 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101349602A (zh) * | 2008-09-12 | 2009-01-21 | 中国电子科技集团公司第四十九研究所 | 高掺杂点电极soi压阻式压力传感器及制造方法 |
CN101615590A (zh) * | 2009-07-31 | 2009-12-30 | 上海新傲科技股份有限公司 | 采用选择腐蚀工艺制备绝缘体上硅材料的方法 |
CN101996922A (zh) * | 2009-08-13 | 2011-03-30 | 江苏丽恒电子有限公司 | Soi晶片及其形成方法 |
CN202075068U (zh) * | 2011-03-24 | 2011-12-14 | 上海赛素传感器科技有限公司 | 高稳定高灵敏单片硅基微压传感器 |
CN103350983A (zh) * | 2013-07-01 | 2013-10-16 | 广东合微集成电路技术有限公司 | 一种集成晶圆级真空封装的mems器件及其制造方法 |
CN104089727A (zh) * | 2014-07-11 | 2014-10-08 | 龙微科技无锡有限公司 | 集成温度的高性能压力传感器芯片及制造方法 |
-
2015
- 2015-07-19 CN CN201510421946.XA patent/CN105067165B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101349602A (zh) * | 2008-09-12 | 2009-01-21 | 中国电子科技集团公司第四十九研究所 | 高掺杂点电极soi压阻式压力传感器及制造方法 |
CN101615590A (zh) * | 2009-07-31 | 2009-12-30 | 上海新傲科技股份有限公司 | 采用选择腐蚀工艺制备绝缘体上硅材料的方法 |
CN101996922A (zh) * | 2009-08-13 | 2011-03-30 | 江苏丽恒电子有限公司 | Soi晶片及其形成方法 |
CN202075068U (zh) * | 2011-03-24 | 2011-12-14 | 上海赛素传感器科技有限公司 | 高稳定高灵敏单片硅基微压传感器 |
CN103350983A (zh) * | 2013-07-01 | 2013-10-16 | 广东合微集成电路技术有限公司 | 一种集成晶圆级真空封装的mems器件及其制造方法 |
CN104089727A (zh) * | 2014-07-11 | 2014-10-08 | 龙微科技无锡有限公司 | 集成温度的高性能压力传感器芯片及制造方法 |
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CN105067165B (zh) | 2018-02-02 |
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Effective date of registration: 20160222 Address after: 215600, Jiangsu Suzhou Zhangjiagang Free Trade Zone, Hong Kong and Macao Road 15 sensor industry park Applicant after: Mou Heng Address before: 215600 Jiangsu, Suzhou, Zhangjiagang Free Trade Zone, Hong Kong and Macao road sensor industry park Applicant before: The gloomy sensor Science and Technology Ltd. of Jiangsu Dare |
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Effective date of registration: 20160318 Address after: 400714 Chongqing District of Beibei city and high-tech Industrial Park Road No. 5, No. 317 of the Milky way Applicant after: Chongqing Adelson Sensor Technology Co., Ltd. Address before: 215600, Jiangsu Suzhou Zhangjiagang Free Trade Zone, Hong Kong and Macao Road 15 sensor industry park Applicant before: Mou Heng |
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Effective date of registration: 20171228 Address after: Suzhou City, Jiangsu province 215634 Zhangjiagang Bonded Zone Huada Road No. 36 Science Park A Building 2 floor Applicant after: The gloomy sensor Science and Technology Ltd. of Jiangsu Dare Address before: 400714 Chongqing District of Beibei city and high-tech Industrial Park Road No. 5, No. 317 of the Milky way Applicant before: Chongqing Adelson Sensor Technology Co., Ltd. |
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Effective date of registration: 20210415 Address after: 210000 Zhongguancun Software Park, 7 Yingcui Road, Jiangjun Avenue, Jiangning Development Zone, Nanjing City, Jiangsu Province Patentee after: JIANGSU DER SENSOR HOLDINGS Ltd. Address before: 215634 2nd floor, building a, kechuangyuan, No.36, Huada Road, Zhangjiagang Free Trade Zone, Suzhou City, Jiangsu Province Patentee before: JIANGSU DERSON SENSOR TECHNOLOGY Co.,Ltd. |