CN105051581A

CN105051581A - Optical waveguide and electronic device

Info

Publication number: CN105051581A
Application number: CN201480017773.9A
Authority: CN
Inventors: 久保田匠
Original assignee: Sumitomo Bakelite Co Ltd
Current assignee: Sumitomo Bakelite Co Ltd
Priority date: 2013-03-29
Filing date: 2014-03-24
Publication date: 2015-11-11
Anticipated expiration: 2034-03-24
Also published as: JP2015127783A; TWI619977B; WO2014157039A1; JP6394018B2; US9557481B2; TW201445203A; US20160047978A1; CN105051581B

Abstract

An optical waveguide is provided with a core layer in which a core is formed, a first cladding layer laminated on one surface of the core layer, a second cladding layer laminated on the other surface of the core layer, and a hollow section which passes through the second cladding layer and the core layer and reaches to the first cladding layer, and is characterized in that a part of the inner wall surface of the hollow section is configured as an inclined surface which is inclined to and intersects with the plane containing the interface between the core layer and the first cladding layer, and in that plane, the minimum radius of curvature of the area of connection between the inclined surface and the other parts of the inner wall surface continuous therewith is 1-500 mu m.

Description

Optical waveguide and electronic equipment

Technical field

The present invention relates to optical waveguide and electronic equipment.

The application advocate in based on March 29th, 2013 in No. 2013-075387, the Patent of Japanese publication and the right of priority on November 26th, 2013 in No. 2013-243997, the Patent of Japanese publication, and quote its content at this.

Background technology

In recent years, as the means for other place of being led from the three unities by light signal, optical waveguide is popularized gradually.This optical waveguide has the core of wire and is set to the coating portion of the surrounding covering core.Core is made up of the material transparent in fact relative to light, and coating portion is made up of the material that refractive index ratio core is low.

In optical waveguide, the light imported from one end of core carries out reflection limit in the boundary edge in core and coating portion and is carried by the other end.In optical waveguide, be configured with the light-emitting components such as semiconductor laser at the light incident side of light, be configured with the photo detectors such as photodiode in the exiting side of light.Incident and propagate optical waveguide to optical waveguide from the light of light-emitting component injection, then received by photo detector.Communicate based on the blinker pattern of light received or the strong and weak pattern of light.

Such as, if the electric wiring in signal processing substrate is replaced as optical waveguide, then problem specific to the electric signal can expecting to eliminate the generation of high frequency noise, the deterioration of electric signal and so on, thus the further high throughput of signal processing substrate can be made.

In order to electric wiring is replaced as optical waveguide, need the mutual conversion carrying out electric signal and light signal.Therefore, the optical waveguide module of optical waveguide possessing light-emitting component and photo detector, will be connected to be optically between light-emitting component with photo detector is developed.

Such as, Patent Document 1 discloses and there is tellite, be equipped on the light-emitting component on tellite and be arranged at the optical interface of optical waveguide of lower face side of tellite.And, via being formed at being connected to be optically for the through hole that is through hole transmitting light signal of tellite between optical waveguide and light-emitting component.

In above-mentioned optical interface, in order to make the flashlight penetrated from the illuminating part of light-emitting component to the core incidence of optical waveguide, need to utilize the catoptron conversion light path being formed at optical waveguide.

Above-mentioned catoptron such as can be made up of the dip plane of the core be formed as in only transversal optical waveguide, but also can described in patent documentation 2, spread all over the dip plane that core and the coating being laminated in this core formed continuously and form.Disclose after stacked under-clad layer, core and top covering at patent documentation 2, formed relative to the axis of core in their one end, namely length direction tilts the dip plane of 45 °, thus to be used this dip plane be the light reflection surface of optical waveguide.

Patent documentation 1: Japanese Unexamined Patent Publication 2005-294407 publication

Patent documentation 2: Japanese Unexamined Patent Publication 2012-208306 publication

But, when arranging dip plane at duplexer, worry to be peeling between core and coating, and make the problem that the transmission characteristic of optical waveguide reduces, the reflection characteristic of catoptron reduces.

Summary of the invention

The object of the present invention is to provide and a kind ofly can suppress the reduction of transmission characteristic and carry out the optical waveguide of the optical communication of high-quality and possess the electronic equipment of above-mentioned optical waveguide.

Above-mentioned object can be realized by the present invention of following (1) ~ (11).

(1) a kind of optical waveguide, its have the sandwich layer being formed with core, the one side being laminated in above-mentioned sandwich layer the first coating, be laminated in the another side of above-mentioned sandwich layer the second coating and respectively through above-mentioned second coating and above-mentioned sandwich layer until the blank part of above-mentioned first coating

The feature of above-mentioned optical waveguide is,

The part of the internal face of above-mentioned blank part by relative to comprising the planar tilt at above-mentioned sandwich layer and the interface of above-mentioned first coating and the dip plane intersected is formed,

In above-mentioned plane, above-mentioned dip plane and above-mentioned internal face, be 1 ~ 500 μm with the minimum profile curvature radius of the connecting portion of above-mentioned dip plane other parts of continuous print.

(2) optical waveguide described in above-mentioned (1), is characterized in that, be configured to:

Above-mentioned blank part is arranged on the extended line of the length direction of above-mentioned core or above-mentioned core,

The optical axis of the transversal above-mentioned core in above-mentioned dip plane or its extended line.

(3) optical waveguide described in above-mentioned (1) or (2), is characterized in that,

In the above-mentioned blank part in the face of the side contrary with above-mentioned sandwich layer in above-mentioned second coating, above-mentioned dip plane and above-mentioned internal face, be 1 ~ 500 μm with the minimum profile curvature radius of the connecting portion of above-mentioned dip plane other parts of continuous print.

(4) described any one of above-mentioned (1) ~ (3) optical waveguide, is characterized in that,

In the above-mentioned blank part at the interface of above-mentioned second coating and above-mentioned sandwich layer, above-mentioned dip plane and above-mentioned internal face, be 1 ~ 500 μm with the minimum profile curvature radius of the connecting portion of above-mentioned dip plane other parts of continuous print.

(5) described any one of above-mentioned (1) ~ (4) optical waveguide, is characterized in that,

There is the overlayer in the face of the side contrary with above-mentioned sandwich layer being laminated in above-mentioned second coating.

(6) described any one of above-mentioned (1) ~ (5) optical waveguide, is characterized in that,

The internal face of above-mentioned blank part comprises relative to above-mentioned plane the vertical surface of the angular cross with the angle of acute side being 60 ~ 90 °.

(7) described any one of above-mentioned (1) ~ (6) optical waveguide, is characterized in that,

Above-mentioned dip plane relative to above-mentioned plane with the angular cross of 20 ~ 90 °.

(8) optical waveguide described in above-mentioned (6) or (7), is characterized in that, be configured to:

The internal face of above-mentioned blank part comprises two above-mentioned dip plane and two above-mentioned vertical surfaces,

Above-mentioned blank part within it wall by the section after above-mentioned plane cutting, above-mentioned dip plane each other and above-mentioned vertical surface opposed separately from each other.

(9) described any one of above-mentioned (6) ~ (8) optical waveguide, is characterized in that,

Above-mentioned vertical surface bends along the length direction of optical waveguide.

(10) described any one of above-mentioned (1) ~ (5) optical waveguide, is characterized in that, be configured to:

The internal face of above-mentioned blank part becomes acute angle with the angle of the angle between above-mentioned plane that is the side contrary with above-mentioned blank part side.

(11) electronic equipment, is characterized in that,

Possesses optical waveguide described any one of above-mentioned (1) ~ (10).

According to the present invention, the reduction that can suppress transmission characteristic can be obtained and the optical waveguide of carrying out the optical communication of high-quality.

In addition, according to the present invention, the electronic equipment that the reliability that possesses above-mentioned optical waveguide is higher can be obtained.

Accompanying drawing explanation

The part that Fig. 1 is through optical waveguide represents the stereographic map of the first embodiment of optical waveguide of the present invention.

Fig. 2 is the vertical view of the optical waveguide shown in Fig. 1.

Fig. 3 is the vertical view of the opening after the plane cutting schematically showing recess (blank part) the involved sandwich layer of the optical waveguide shown in Fig. 2 and the interface of the first coating.

Fig. 4 is the vertical view of the opening of the recess (blank part) schematically showing the optical waveguide shown in Fig. 2.

Fig. 5 is the vertical view of the optical waveguide involved by the second embodiment.

Fig. 6 is the vertical view of the optical waveguide involved by the 3rd embodiment.

Fig. 7 is the cut-open view of the optical waveguide involved by the 4th embodiment.

Fig. 8 is the stereographic map of an example of the laser processing device that the manufacture schematically showing optical waveguide of the present invention uses.

Fig. 9 be a diagram that and makes laser machining mask relative movement and the vertical view forming the situation of recess.

Figure 10 is the vertical view of other configuration examples of the opening schematically showing the recess shown in Fig. 4.

Embodiment

Below, based on preferred implementation shown in the drawings, optical waveguide of the present invention and electronic equipment are described in detail.

< optical waveguide >

" the first embodiment "

First, the first embodiment of optical waveguide of the present invention is described.

Fig. 1 is through the stereographic map that a part represents the first embodiment of optical waveguide of the present invention, Fig. 2 is the vertical view of the optical waveguide shown in Fig. 1, Fig. 3 is the vertical view of the opening after the plane cutting schematically showing recess (also referred to as blank part, groove) the involved sandwich layer of the optical waveguide shown in Fig. 2 and the interface of the first coating, and Fig. 4 is the vertical view of the opening of the recess (blank part) schematically showing the optical waveguide shown in Fig. 2.

Optical waveguide 1 shown in Fig. 1, in banded, transmit light signal, carries out optical communication between light incident section and light exit portion.

Optical waveguide 1 shown in Fig. 1 possesses the duplexer 10 of stacked coating 11, sandwich layer 13 and coating 12 from downside.In sandwich layer 13, be formed strip core 14 and with the flank abutment of core 14 the side that arranges be coated to portion 15.In addition, in Fig. 1, Fig. 2, dotted line etc. is utilized also the core 14 sandwich layer 13 can had an X-rayed from coating 12, side to be coated to portion 15 and to illustrate.

The width of core 14 and the height (thickness of sandwich layer 13) of core 14 are not particularly limited, but are preferably about 1 ~ 200 μm, are more preferably about 5 ~ 100 μm.Thereby, it is possible to realize the densification of the core 14 of sandwich layer 13, thus the transmission efficiency of the light of optical waveguide can be improved.That is, the number of the core 14 can laid in each unit area can be increased, even if therefore optical waveguide is small size, also can carry out jumbo optical communication.

In addition, the number being formed at the core 14 of sandwich layer 13 is not particularly limited, but such as can form 1 ~ 100.

In addition, the index distribution of the Width of optical waveguide 1 and the index distribution of thickness direction can be respectively the distribution of so-called step-refraction index (SI) type that refractive index changes discontinuously, the distribution of so-called graded-index (GI) type that also can change continuously for refractive index.

The recess (blank part) 170 its part removing formed is provided with in optical waveguide 1.That is, optical waveguide 1 possesses duplexer 10 and is formed at the recess 170 of duplexer 10.Recess 170 shown in Fig. 1 is positioned at the midway of the length direction of core 14.A part for the medial surface of recess 170 becomes the optical axis relative to core 14, i.e. the dip plane 171 of the length direction inclination of core 14.In other words, dip plane 171 intersects relative to the planar tilt comprising sandwich layer 13 and the interface of coating 11.Above-mentioned dip plane 171 plays function as the catoptron (light path converting portion) of the light path of conversion core 14.That is, the catoptron be made up of dip plane 171 makes the light propagated from the upside of Fig. 2 towards downside in core 14 reflect towards the paper inboard of Fig. 2, thus the conversion direction of propagation.

Recess 170 is configured to after by orthogonal with the upper surface of coating 12 and parallel with the length direction of core 14 plane cutting, and its section shape is the trapezoidal of the narrower and wider width of opening of the width of bottom.In addition, recess 170 also can be configured to when by orthogonal with the upper surface of coating 12 and parallel with the length direction of core 14 plane cutting, and its section shape is in the triangle taking bottom as summit.

In addition, as shown in Figure 1 and Figure 2, dip plane 171 be from coating 12 via sandwich layer 13 until the tabular surface formed continuously between the midway of coating 11.In addition, the position opposed with dip plane 171 in the medial surface of recess 170 is provided with another dip plane 172.This dip plane 172 also identically with dip plane 171, for from coating 12 via sandwich layer 13 until the tabular surface formed continuously between the midway of coating 11.

On the other hand, in the medial surface of recess 170 with the optical axis of core 14, two faces that namely length direction is almost parallel are respectively the vertical surface 173,174 with the relation vertical with the lower surface of coating 11.This vertical surface 173,174 is configured to, when overlooking the plane at the interface comprising sandwich layer 13 and coating 11, as shown in Figure 2, can observe slight curvature.

The medial surface of recess 170 is made up of 171,172 and two, above-mentioned two dip plane vertical surface 173,174.

If form recess in optical waveguide, then often produce the undesirable unfavorable condition relevant with transmission characteristic, reflection characteristic.Above-mentioned unfavorable condition produces with higher frequency when carrying out the such accelerated test of temperature cycling test to optical waveguide, therefore be thought of as the load brought along with accelerated test, and optical waveguide produce some chemical in or problem in structure.

The present inventor attentively investigates the reason producing unfavorable condition in the optical waveguide possessing above-mentioned recess, studies.Then, found that the reason of unfavorable condition is the splitting produced near recess, the splitting that the sandwich layer specifically near above-mentioned dip plane and the interface of coating produce.Then, found that the generation of above-mentioned splitting is suppressed when the shape of the peristome of recess meets defined terms, its result, the unfavorable condition produced in optical waveguide can have been eliminated, and complete the present invention.

Namely, by when utilizing the peristome of the recess 170 after comprising sandwich layer in optical waveguide 1 13 and the internal face of the plane cutting recess 170 at the interface of coating 11 to be set to " peristome 177 ", the plan view shape of peristome 177 in by with above-mentioned two dip plane 171,172 corresponding straight-line segment 171b, 172b and the ellipse that forms with straight-line segment 171b, 172b adjacent (continuously) and with above-mentioned two vertical surfaces 173,174 corresponding arc 173b, 174b.And the minimum profile curvature radius of the connecting portion 178 of each straight-line segment 171b, 172b and each arc 173b, 174b becomes 1 ~ 500 μm (with reference to the radius-of-curvature r of Fig. 3 ₂).

According to the recess 170 with above-mentioned section shape, stress in its vicinity concentrating of local is relaxed.Its result, can suppress the position of concentrating with stress to be that starting point produces be full of cracks, interlayer near recess 170 is peeling.Its result, can obtain can suppress the reduction of the transmission efficiency of optical waveguide 1, dip plane 171 reflection efficiency reduction and carry out the optical waveguide 1 of the optical communication of high-quality.

In addition, minimum profile curvature radius r ₂be preferably formed about 3 ~ 400 μm, be more preferably formation about 5 ~ 350 μm, be more preferably formation about 10 ~ 100 μm further, most preferably form about 20 ~ 40 μm.

If the minimum profile curvature radius of connecting portion 178 is less than above-mentioned lower limit, then stress easily concentrates on connecting portion 178, thus the probability producing the stripping between be full of cracks with this as the starting point, generating layer increases.On the other hand, if the minimum profile curvature radius of connecting portion 178 is greater than above-mentioned higher limit, then cause expecting further effect, in addition, peristome 177 is inevitable excessive, therefore produces the problem that cannot form less recess 170.

In addition, so-called connecting portion 178 is in the peristome 177 shown in Fig. 3, such as, be positioned at the part between the straight-line segment 171b corresponding with dip plane 171 and the arc 173b corresponding with vertical surface 173 (other parts).In addition, connecting portion 178 more specifically refers in figure 3, L1 is set in the maximum length of the X-direction by peristome 177, when the length of straight-line segment 171b is set to L2, the terminal 171b ' in the left side from straight-line segment 171b in peristome 177 has the width of (L1-L2)/4 to the left, and is contained in the part of the scope of the band shape parallel with Y-direction.

Identical therewith, the terminal 172b ' in the left side from straight-line segment 172b of the peristome 177 shown in Fig. 3 is had to the left the width of (L1-L2)/4, and the part being contained in the scope of the band shape parallel with Y-direction is called connecting portion 178.

On the other hand, the terminal 171b on the right side from straight-line segment 171b of the peristome 177 shown in Fig. 3 " there is the width of (L1-L2)/4 to the right, and the part being contained in the scope of the band shape parallel with Y-direction is also connecting portion 178.

In addition, the terminal 172b on the right side from straight-line segment 172b of the peristome 177 shown in Fig. 3 " there is the width of (L1-L2)/4 to the right, and the part being contained in the scope of the band shape parallel with Y-direction is also connecting portion 178.

Above-mentioned scope is adjoin with dip plane 171, dip plane 172, the region therefore for easily causing stress specific to dip plane to be concentrated.In the present invention, found by make above-mentioned scope and connecting portion 178 specific, and at least specify minimum profile curvature radius at connecting portion 178, can stripping more reliably between inhibition layer.

In addition, the shape that the rectangular pyramid that recess 170 gradually changes in cross-sectional area is such, therefore the peristome 175 as the open end of recess 170 is in area ratio peristome 177 greatly, and the similarity relation of the part in the relation roughly similar to peristome 177 or compression or elongated openings portion 177.Therefore, the plan view shape of the peristome 175 of the recess 170 shown in Fig. 2 is in the ellipse be made up of upper end, dip plane 171a, 172a and vertical surface upper end 173a, 174a, wherein upper end, dip plane 171a, 172a are formed by with above-mentioned two dip plane 171,172 corresponding straight-line segment, and vertical surface upper end 173a, 174a are formed by with above-mentioned two vertical surfaces 173,174 corresponding arcs.Therefore, even if in this peristome 175, the connecting portion 176 of each dip plane upper end 171a, 172a and each vertical surface upper end 173a, 174a also preferably becomes curve.Thus, above-mentioned effect is more remarkable.That is, near recess 170, when producing the stress along with the change, thermal distortion etc. of structure, this stress is also difficult to concentrate on connecting portion 176.Its result, can suppress to concentrate along with stress and produce and be peeling with connecting portion 176 be full of cracks that is starting point, interlayer near connecting portion 176.Its result, can obtain can more suppress the reduction of the transmission efficiency of optical waveguide 1, dip plane 171 reflection efficiency reduction and carry out the optical waveguide 1 of the optical communication of high-quality.

In this case, the minimum profile curvature radius r of connecting portion 176 ₁(with reference to Fig. 4) is not particularly limited, but is preferably about 1 ~ 500 μm, is more preferably about 3 ~ 400 μm, more preferably about 5 ~ 350 μm, is more preferably about 10 ~ 100 μm further, most preferably is about 20 ~ 40 μm.By the minimum profile curvature radius r of connecting portion 176 ₁be set in above-mentioned scope, thus the stress that can relax connecting portion 176 is especially concentrated, and then the generation of the unfavorable condition concentrated along with stress can be suppressed.

In addition, so-called connecting portion 176 is in the peristome 175 shown in Fig. 4, such as, part between the dip plane upper end 171a corresponding with dip plane 171 and the vertical surface upper end 173a corresponding with vertical surface 173.In addition, connecting portion 176 more specifically refers in the diagram, L3 is set in the maximum length of the X-direction by peristome 175, when the length of upper end, dip plane 171a is set to L4, the terminal 171a ' in the left side from upper end, dip plane 171a of peristome 175 has the width of (L3-L4)/4 to the left, and is contained in the part of the scope of the band shape parallel with Y-direction.

Identical therewith, the terminal 172a ' in the left side from upper end, dip plane 172a of the peristome 175 shown in Fig. 4 is had to the left the width of (L3-L4)/4, and the part being contained in the scope of the band shape parallel with Y-direction is called connecting portion 176.

On the other hand, the terminal 171a on the right side from upper end, dip plane 171a in the peristome 175 shown in Fig. 4 " there is the width of (L3-L4)/4 to the right, and the part being contained in the scope of the band shape parallel with Y-direction is also connecting portion 176.

In addition, the terminal 172a on the right side from upper end, dip plane 172a in the peristome 175 shown in Fig. 4 " there is the width of (L3-L4)/4 to the right, and the part being contained in the scope of the band shape parallel with Y-direction is also connecting portion 176.

In addition, not only above-mentioned peristome 175, peristome 177, such as in the peristome of recess 170, the bottom of recess 170 at coating 12 and the interface of sandwich layer 13, the minimum profile curvature radius of the connecting portion of the straight-line segment corresponding with dip plane 171 and the arc corresponding with vertical surface 173 is also preferably about 1 ~ 500 μm respectively, be more preferably about 3 ~ 400 μm, more preferably about 5 ~ 350 μm, be more preferably about 10 ~ 100 μm further, most preferably be about 20 ~ 40 μm.Thus, in optical waveguide 1, more reliably can suppress the generation of the unfavorable condition concentrated along with stress.

In addition, the minimum profile curvature radius of the part beyond the connecting portion 178 of peristome 177 also can in above-mentioned scope, if but in above-mentioned scope, then not only each connecting portion, even if also comprising the peristome entirety (bottom integrated) of the line segment corresponding with dip plane, the arc corresponding with vertical surface, preferred minimum profile curvature radius is also in above-mentioned scope.Thus, in optical waveguide 1, more reliably can suppress the generation of the unfavorable condition concentrated along with stress.

In addition, the shape of recess 170 preferably in roughly tetrapyamid shape, but may not be defined in above-mentioned shape, and in this case, peristome 177 also can be mutually different from the shape of peristome 175.

In addition, the global shape of peristome 177, peristome 175 is formed above-mentioned ellipse, thus above-mentioned effect is more remarkable.Namely, the shape of peristome 177, peristome 175 is formed ellipse, even if thus when supposing to apply the external force of stretching along its length to optical waveguide 1, the shape effect of peristome 177, peristome 175 also can be passed through, mitigation stress concentrating to connecting portion 176 especially.Therefore, connecting portion 178, connecting portion 176 are formed curve as described above, and the shape of peristome 177, peristome 175 is formed ellipse, thus the generation of the unfavorable condition concentrated along with stress can be suppressed especially.In addition, " ellipse " of this instructions so-called refers to that the part at circumference comprises the circle of straight line portion.

In addition, the global shape of peristome 175 is not limited to ellipse, and the part beyond the 171a of upper end, dip plane can be also arbitrary shape, such as, can enumerate the polygon that quadrilateral, pentagon, hexagon are such.This situation is also identical in peristome 177.

In addition, dip plane 171 plays function as catoptron, therefore, it is possible to suitably set its angle of inclination accordingly with the direction of the light path of conversion core 14, but with the lower surface of sandwich layer 13 for reference field time, reference field and dip plane 171 angulation (acute side) are preferably about 30 ~ 60 °, are more preferably about 40 ~ 50 °.Angle of inclination is set in above-mentioned scope, thus in dip plane 171, the light path of core 14 can be changed efficiently, and then the loss along with light path converting can be suppressed.

In addition, reference field and dip plane 172 angulation (acute side) are not particularly limited, but are preferably about 20 ~ 90 °, are more preferably about 30 ~ 60 °, more preferably about 40 ~ 50 °, most preferably formed identical with the angle of inclination of dip plane 171.Thus, when producing stress near recess 170, stress distribution is even, thus can also suppress the generation of the unfavorable condition concentrated along with stress especially.In addition, so-called reference field and dip plane 171,172 angulation (acute side) refer to the angle of the side contrary with recess 170 side in reference field and dip plane 171,172 angulation.

In the first embodiment, vertical surface 173,174 is with to comprise sandwich layer 13 orthogonal with the plane at the interface of coating 11.But reference field and vertical surface 173,174 angulation (acute side) are not limited to this, are preferably formed about 60 ~ 90 ° respectively, are more preferably formation about 70 ~ 90 °, are preferably formed about 80 ~ 90 ° further.Reference field and vertical surface 173,174 angulation are set in above-mentioned scope, thus the stress at the interface putting on coating 11 and sandwich layer 13 can be suppressed especially.In addition, in the various figures, reference field and vertical surface 173,174 angulation are illustrated as roughly 90 °.In addition, so-called reference field and vertical surface 173,174 angulation (acute side) refer to the angle of the side contrary with recess 170 side of reference field and vertical surface 173,174 angulation.

The width occupied by above-mentioned recess 170 suppresses, for Min., therefore when forming multiple recess 170 adjacently, its interval can be made to minimize.Therefore, reference field and vertical surface 173,174 angulation being limited to above-mentioned scope, inherent also can to configure this point of recess 170 to high-density relative to the core 14 be set up in parallel with narrower spacing useful.In addition, reference field and vertical surface 173,174 angulation are limited in above-mentioned scope, thus can suppress near vertical surface 173,174 that the stress that causes is concentrated because forming the physical property difference of the material of each layer especially, and then be difficult to especially produce splitting, therefore, it is possible to improve the reliability of optical waveguide 1 especially.

In addition, the shape of the vertical surface 173,174 of peristome 177, peristome 175, the shape entirety of namely above-mentioned arc 173b, 174b, vertical surface upper end 173a, 174a becomes curved shape.The vertical surface 173,174 forming above-mentioned shape can relax concentrating of stress especially.Its result, becomes curve as described above with the connecting portion 178 of peristome 177, the connecting portion 176 of peristome 175 and interacts, more reliably can suppress the generation of the unfavorable condition near recess 170.

In addition, the depth capacity of recess 170 is set appropriately according to the thickness of duplexer 10, is not particularly limited, but the viewpoint of physical strength, pliability and so on from optical waveguide 1, be preferably formed about 1 ~ 500 μm, be more preferably formation about 5 ~ 400 μm.

In addition, the maximum length of recess 170, namely the maximum length of the Y-direction of the recess 170 of Fig. 2 is not particularly limited, but from coating 11,12, the thickness of sandwich layer 13, the angle of inclination of dip plane 171 relation, be preferably formed about 2 ~ 1200 μm, be more preferably formation about 10 ~ 1000 μm.

Further, the breadth extreme of recess 170, namely the maximum length of the X-direction of the recess 170 of Fig. 2 is not particularly limited, and is set properly accordingly with the width etc. of core 14, but is preferably formed about 1 ~ 600 μm, is more preferably formation about 5 ~ 500 μm.

In addition, recess 170 also can arrange one relative to a core 14, but also can relative to many cores 14 to arrange a recess 170 across the mode of these cores.

In addition, when forming multiple recess 170, the forming position of these recesses can be position mutually identical in the Y direction, also can mutually stagger.

Sandwich layer 13 as described above and coating 11, the constituent material (main material) of 12, such as acrylic resin can be used, metha crylic resin, polycarbonate, polystyrene, epikote, the cyclic ether system resin that oxetanes system resin is such, polyamide, polyimide, polybenzoxazole, polycrystalline silane, polysilazane, silicone-based resin, fluorine-type resin, polyurethane, polyolefin-based resins, polybutadiene, polyisobutylene, polychlorobutadiene, polyethylene terephthalate (PET), the polyester that polybutylene terephthalate (PBT) is such, polyglycol, polysulfones, polyethers, benzocyclobutene system resin, the various resin materials etc. that the annular ethylene series resin such as norbornene resin are such.In addition, resin material also can be the compound substance of the material of the different composition of combination.These materials because processing is than being easier to, so preferred as being formed with the sandwich layer 13 of recess 170, the constituent material of coating 11,12.

" the second embodiment "

Next, the second embodiment of optical waveguide of the present invention is described.

Below, the second embodiment is described, but in the following description, the difference with the first embodiment is described, omit the explanation to identical item.

The optical waveguide 1 involved by the second embodiment shown in Fig. 5 is except the forming position difference of recess 170, identical with the optical waveguide 1 involved by the first embodiment.

That is, recess 170 side be formed on the extended line of core 14 shown in Fig. 5 is coated to portion 15.When forming above-mentioned recess 170, processing coating 12, side are coated to portion 15 and coating 11, but the position of these processing place all for being made up of lining material.Therefore, when processing each position, the processing conditionss such as process velocity are roughly equal.Its result, can implement processing with higher machining precision, thus can improve the dimensional accuracy of formed recess 170 especially.Therefore, according to the present embodiment, can obtain and possess the high recess of dimensional accuracy 170, thus the reflection efficiency of dip plane 171 is high, and the optical waveguide 1 of the optical communication of high-quality can be carried out.

Even if in the second above-mentioned embodiment, also the effect identical with the first embodiment, effect can be obtained.

" the 3rd embodiment "

Next, the 3rd embodiment of optical waveguide of the present invention is described.

Below, the 3rd embodiment is described, but in the following description, the difference with the first embodiment is described, omit the explanation to identical item.

In the optical waveguide 1 involved by the first above-mentioned embodiment, vertical surface 173,174 is orthogonal with the plane at the interface of coating 11 relative to comprising sandwich layer 13, on the other hand, in the optical waveguide 1 involved by present embodiment, these vertical surfaces 173,174 become the dip plane 173 ', 174 ' to intersect relative to the mode of above-mentioned planar tilt.Optical waveguide 1 involved by present embodiment is except except this some difference, identical with the optical waveguide 1 involved by the first embodiment.

The medial surface of above-mentioned recess 170 is made up of four dip plane.That is, the medial surface entirety of recess 170 is configured to become acute angle with the angle of reference field (angle of the side contrary with recess 170 side).Above-mentioned recess 170, in so-called mortar shape, is therefore formed than being easier to.Therefore, it is possible to easily form the high dip plane 171 of dimensional accuracy (precision at pitch angle and surface accuracy).

Even if in the 3rd above-mentioned embodiment, also the effect identical with the first embodiment, effect can be obtained.

" the 4th embodiment "

Next, the 4th embodiment of optical waveguide of the present invention is described.

Below, the 4th embodiment is described, but in the following description, the difference with the first embodiment is described, omit the explanation to identical item.

The optical waveguide 1 involved by the 4th embodiment shown in Fig. 7 is except the supporting diaphragm 2 that possesses the lower surface being laminated in coating 11 further and the covering diaphragm 3 of upper surface being laminated in coating 12, identical with the optical waveguide 1 involved by the first embodiment.

In addition, recess 170 is configured to through covering diaphragm 3.Therefore, dip plane 171 become be formed as from covering diaphragm 3 respectively via coating 12 and sandwich layer 13 until continuous print tabular surface between the midway of coating 11.

Even if in the 4th above-mentioned embodiment, also the effect identical with the first embodiment, effect can be obtained.

In addition, according to the 4th embodiment, dip plane 171 also comprises the section covering diaphragm 3, therefore has wider area.Therefore, easily dip plane 171 is formed with higher precision.That is, the face for processing is wider, more easily can improve the machining precision of the section of core 14, therefore according to the 4th embodiment, can improve the reflection efficiency of catoptron especially.

In addition, not only above-mentioned peristome 175, peristome 177, the peristome of recess 170 at the interface of coating 12 and sandwich layer 13 and the bottom of recess 170, even if covering the peristome of diaphragm 3 with the recess 170 at the interface of coating 12, the peristome of the recess 170 at the interface of coating 11 and supporting diaphragm 2, the minimum profile curvature radius of the connecting portion of the straight-line segment corresponding with dip plane 171 and the arc corresponding with vertical surface 173 is also preferably about 1 ~ 500 μm respectively, be more preferably about 3 ~ 400 μm, more preferably about 5 ~ 350 μm, be more preferably about 10 ~ 100 μm further, most preferably be about 20 ~ 40 μm.Thus, in optical waveguide 1, more reliably can suppress the generation of the unfavorable condition concentrated along with stress.

The manufacture method > of < optical waveguide

Next, the manufacture method of optical waveguide of the present invention is described.

Optical waveguide 1 shown in Fig. 1 can manufacture by having the method for following operation, namely stacks gradually coating 11, sandwich layer 13 and coating 12 and obtains the operation of duplexer 10 and apply the processing of the part removing duplexer 10 thus the operation of formation recess 170.

Below, successively each operation is described.

[1] first, by (a) film forming and manufacture the method for the constituent for the formation of coating 11, the constituent for the formation of sandwich layer 13 and the constituent for the formation of coating 12 successively, b () is after each constituent of use forms coating 11, sandwich layer 13 and coating 12 respectively, stacked method, c () simultaneously extrusion molding three kinds of constituents and manufacture the method etc. of duplexer, obtain sandwich layer and form layer or comprise the cambial multi-ply construction of sandwich layer.

Now, as the constituent for the formation of sandwich layer 13, use the material with the index modulation ability that refractive index changes because of exposure, only layer is formed to this sandwich layer and implement exposure-processed, the sandwich layer 13 comprised with the core 14 of desired pattern laying can be obtained.

In addition, the manufacture method of sandwich layer 13 is not limited to above-mentioned method, and that such as repeatedly carries out film formation process and combined light lithography and etching technique portrays pattern operation, thus can obtain the sandwich layer 13 comprising the core 14 laid with desired pattern.

[2] following, implement the processing of a part for removing duplexer 10.Thus, be formed with recess 170, thus optical waveguide 1 can be obtained.In the formation method of recess 170, various method can be enumerated.Such as, except the mechanical processing method of cut, grinding and so on, laser processing method, electron beam process method, stamped method etc. can also be enumerated.Wherein, according to laser processing method, the higher recess of dimensional accuracy 170 can be formed with comparalive ease.Below, as representative, the method being formed recess 170 by laser processing method is described.

Fig. 8 is the stereographic map of an example of the laser processing device that the manufacture schematically showing optical waveguide of the present invention uses, and Fig. 9 be a diagram that and makes laser machining mask relatively move and form the vertical view of the appearance of recess.

Laser machine (laser processing device) 900 shown in Fig. 8 possesses not shown LASER Light Source, is configured at the laser machining mask 910 on the optical axis of laser and is configured at the side contrary with LASER Light Source across laser machining mask 910 and makes duplexer 10 relative to the not shown driving worktable of laser machining mask 910 relatively movement.Below, the structure in each portion of laser machine 900 is described in detail.

The wavelength of the laser of LASER Light Source and vibration is suitably selected accordingly, but such as can enumerate YAG laser, YVO ₄various solid state lasers, CO that laser instrument, Yb laser instrument, semiconductor laser are such ₂the various gas lasers etc. that laser instrument, He-Ne laser instrument, excimer laser are such.

In addition, the wavelength of laser and the constituent material of duplexer 10 are set properly accordingly, such as, can form about 150 ~ 950nm.

As driving worktable, such as, X-Y table, linear actuator etc. can be used.Make to be placed in and drive the duplexer 10 on worktable relatively to move relative to laser machining mask 910, thus the irradiation area of laser can be made relative to duplexer 10 with arbitrary pattern scan.Thereby, it is possible to implement the laser irradiation of random time to the arbitrary position of duplexer 10.

If irradiating laser, then produce gasification reaction at irradiation area, thus produce recess.Therefore, scanning irradiation area, thus form recess continuously along track while scan, final formation has the recess of the opening corresponding with track while scan.

In addition, duplexer 10 can not be made to move relative to fixing laser machining mask 910, and under the state of fixing duplexer 10, make laser machining mask 910 move, both sides also can be made all to move.

Laser machining mask 910 involved by this manufacture method is tabular body, and possesses the occlusion part 911 blocking laser and the through portion 912 supplying laser light.If via this laser machining mask 910 irradiating laser, be then formed with the irradiation area of laser in through portion 912, thus can to the regioselectivity ground irradiating laser on the duplexer 10 corresponding with the plan view shape of through portion 912.

Next, to using above-mentioned laser machining mask 910, the method forming recess 170 at duplexer 10 is described.

Use the laser machining mask 910 shown in Fig. 8, make through portion 912 along the length direction of core 14, namely Y-direction relatively moves and irradiates laser.Fig. 9 show off and on above-mentioned mobile time the position of through portion 912.

If through portion 912 (irradiation area of laser) moves with track as shown in Figure 9, be then formed with the recess 170 of peristome 175 as shown in Figure 4 accordingly with the track of this irradiation area.That is, the recess 170 of the peristome 175 with the ovalize when overlooking can easily be formed.

In addition, if through portion 912 (irradiation area of laser) moves with track as shown in Figure 9, the end of then accompanying in the Y direction therewith, namely moves starting end and mobile end end, is formed with accumulative light quantity along with the accumulative light quantity distribution reduced gradually towards edge.Therefore, the upper end of the track shown in Fig. 9 and bottom are formed with dip plane as shown in Figure 1 171 and dip plane 172.In addition, suitably change the translational speed of through portion 912 now, thus the angle of inclination of dip plane 171,172 can be adjusted.

In addition, for the position corresponding with the connecting portion 178 of peristome 177 in through portion 912, as mentioned above, form the curve of minimum profile curvature radius 1 ~ 500 μm, thus connecting portion 178 also can be made to meet above-mentioned condition.That is, use laser machining mask 910, thus above-mentioned recess 170 can be formed efficiently.

< electronic equipment >

The transmission efficiency of above-mentioned optical waveguide involved in the present invention is higher, and superior with the coupling efficiency of other optics.Optical waveguide of the present invention is possessed therefore, it is possible to obtain, thus the electronic equipment that the reliability can carrying out the optical communication of high-quality is high (electronic equipment of the present invention).

As the electronic equipment possessing optical waveguide of the present invention, such as, can enumerate the electronic equipment classes such as mobile phone, game machine, route device, WDM device, personal computer, TV, home server.In these electronic equipments, all need such as between the memory storages such as arithmetic unit and RAM such as LSI, to transmit jumbo data at high speed.Therefore, above-mentioned electronic equipment possesses optical waveguide of the present invention, thus can eliminate the unfavorable condition such as noise, Signal Degrade specific to electric wiring, thus can expect the significant raising of its performance, therefore, it is possible to contribute to the cost degradation of electronic equipment.

In addition, in optical waveguide portion, thermal value reduces significantly compared with electric wiring.Therefore, it is possible to reduce the electric power needed for cooling, thus the power consumption of electronic equipment entirety can be reduced.

Above, optical waveguide of the present invention and electronic equipment are illustrated, but the present invention is not limited to this, such as, also can be attached with arbitrary construct in optical waveguide.

In addition, when using dip plane for light incident side catoptron, light exit side can make light from the end face of core 14 along the optical axis outgoing of core 14, now, also can be provided with connector at exit end.On the other hand, when using dip plane for light exit side catoptron, light incident side can make light incident along the optical axis of core 14 from the end face of core 14, now, also can be provided with connector in incidence end.

In addition, also multiple recess can be formed with in optical waveguide.Such as when being formed with two recesses, the dip plane of a side can be used is light incident side catoptron, and being used the dip plane of the opposing party is light exit side catoptron.

In addition, the plan view shape of the peristome of recess also can in shape as shown in Figure 10.Figure 10 is the vertical view of other configuration examples of the opening schematically showing the recess shown in Fig. 4.

The peristome 175 of the recess 170 shown in Figure 10 (a) in the form of a substantially rectangular.In addition, the peristome 175 of the recess 170 shown in Figure 10 (b) is in roughly trapezoidal.In addition, the peristome 175 of the recess 170 shown in Figure 10 (c) is in roughly hexagon.Connect the upper end (upper end, dip plane 171a) of the dip plane 171 of above-mentioned recess 170 and become curve as described above with the connecting portion 176 of the upper end (vertical surface upper end 173a) of vertical surface 173.Even if in the optical waveguide of recess possessing above-mentioned shape, the effect identical with the optical waveguide involved by above-mentioned each embodiment, effect also can be obtained.

Present embodiment and this manufacture method comprise following technological thought.

The feature of above-mentioned optical waveguide is,

At the internal face of above-mentioned blank part by the section after above-mentioned plane cutting, above-mentioned dip plane is 1 ~ 500 μm with the minimum profile curvature radius with the connecting portion of above-mentioned other parts of internal face of its continuous print.

On the midway that above-mentioned blank part is arranged at above-mentioned core or extended line,

In the above-mentioned blank part in the face of the side contrary with above-mentioned sandwich layer of above-mentioned second coating and in the above-mentioned blank part at the interface of above-mentioned second coating and above-mentioned sandwich layer, above-mentioned dip plane is respectively 1 ~ 500 μm with the minimum profile curvature radius with the connecting portion of other parts of the above-mentioned internal face of its continuous print.

(4) described any one of above-mentioned (1) ~ (3) optical waveguide, is characterized in that, be configured to:

This optical waveguide has the overlayer in the face of the side contrary with above-mentioned sandwich layer being laminated in above-mentioned second coating further,

Above-mentioned blank part is through above-mentioned overlayer still.

The vertical surface that the internal face of above-mentioned blank part comprises above-mentioned dip plane and generally perpendicularly intersects with above-mentioned plane.

(6) optical waveguide described in above-mentioned (5), is characterized in that, be configured to:

Above-mentioned blank part be configured within it wall by the section after above-mentioned plane cutting, above-mentioned dip plane each other and above-mentioned vertical surface opposed separately from each other.

(7) optical waveguide described in above-mentioned (5) or (6), is characterized in that,

The above-mentioned vertical surface integrally bending of the above-mentioned section of above-mentioned blank part.

(8) described any one of above-mentioned (1) ~ (4) optical waveguide, is characterized in that, be configured to:

The internal face entirety of above-mentioned blank part becomes acute angle with the angle of the angle between above-mentioned plane that is the side contrary with above-mentioned blank part side.

(9) electronic equipment, is characterized in that,

Possesses optical waveguide described any one of above-mentioned (1) ~ (8).

[embodiment]

Next, specific embodiment of the present invention is described.

1. the manufacture of the optical waveguide of subsidiary recess

(embodiment 1-1)

(1) manufacture of coating formation resin combination

The alicyclic epoxy resin made Daicel chemical industry (strain), CELLOXIDE208120g, the cationic polymerization initiators of (strain) ADEKA, ADEKAOptomerSP-1700.6g and hexone 80g are uniformly mixed and have modulated solution.

Next, utilize the PTFE filtrator in 0.2 μm of aperture to filter obtained solution, obtain and clean and water white coating formation resin combination.

(2) manufacture of photosensitive resin composition

Using the phenoxy resin made as Nippon Steel's chemistry (strain) of epoxide polymer, YP-50S20g, the CELLOXIDE2021P5g made as the Daicel chemical industry (strain) of photopolymerization monomer and drop in hexone 80g as the ADEKAOptomerSP-1700.2g of (strain) ADEKA of polymerization initiator, stirring and dissolving and modulated solution.

Next, utilize the PTFE filtrator in 0.2 μm of aperture to filter obtained solution, obtain and clean and water white photosensitive resin composition.

(3) making of downside coating

After on the Kapton by scraper coating formation resin combination being coated on equably thickness 25 μm, drop into the dryer 10 minutes of 50 DEG C.After completely except desolventizing, by UV exposure machine to whole irradiation ultraviolet radiation, the resin combination of coating is solidified.Thus, the water white downside coating of thickness 10 μm is obtained.In addition, ultraviolet accumulative light quantity forms 500mJ/cm ².

(4) making of sandwich layer

After apply photosensitive resin composition equably by scraper on the downside coating made, drop into the dryer 5 minutes of 40 DEG C.Fully except desolventizing and after forming tunicle, on obtained tunicle with describe repeatedly alternating rectilinear, blank straight-line pattern mode by maskless exposure device irradiation ultraviolet radiation.The width W of core forms 50 μm, and the distance P between core forms 250 μm.In addition, the distance P between so-called core refers to the distance between the center line of core.The center line of so-called core refers to center by core and the straight line parallel with the length direction of core.In addition, ultraviolet accumulative light quantity forms 1000mJ/cm ².

Next, in the baking oven tunicle after exposure being dropped into 150 DEG C 30 minutes.Take out from baking oven if can confirm, then present distinct waveguide pattern at tunicle.In addition, the thickness of the sandwich layer obtained is 50 μm.

(5) making of upside coating

The sandwich layer made applies coating formation resin combination in the same manner with (3), obtains the water white upside coating of thickness 10 μm.

(6) formation of recess

Next, separated gap-forming two recesses of 10cm by Laser Processing at core, these recesses are set to respectively light incident side catoptron, light exit side catoptron.Recess makes in the same manner relative to all cores.The shape of the recess formed is as shown in following.In addition, recess is configured to become similarity relation as the shape of the peristome 177 after the shape of the peristome 175 of its open end and involved sandwich layer 13 and the plane cutting at the interface of coating 11.

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 5 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 125 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 105 μm

The depth capacity of recess 170: 65 μm

In addition, for the connecting portion of peristome of recess 170 and the connecting portion of the bottom of recess 170 at the connecting portion 176 of peristome 175, coating 12 and the interface of sandwich layer 13, their minimum profile curvature radius is 5 μm.

In addition, so-called connecting portion is the part between the straight-line segment corresponding with dip plane 171 and the arc corresponding with vertical surface 173.

(embodiment 1-2)

Except changing the shape of laser machining mask, and the shape of the recess of formation being altered to beyond following shape, obtaining optical waveguide identically with embodiment 1-1.

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 20 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 66.25 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 115 μm

The depth capacity of recess 170: 65 μm

In addition, for the connecting portion of peristome of recess 170 and the connecting portion of the bottom of recess 170 at the connecting portion 176 of peristome 175, coating 12 and the interface of sandwich layer 13, their minimum profile curvature radius is 20 μm.

(embodiment 1-3)

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 40 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 48.33 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 125 μm

The depth capacity of recess 170: 65 μm

In addition, for the connecting portion of peristome of recess 170 and the connecting portion of the bottom of recess 170 at the connecting portion 176 of peristome 175, coating 12 and the interface of sandwich layer 13, their minimum profile curvature radius is 40 μm.

(embodiment 1-4)

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 1 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 6.33 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 105 μm

The depth capacity of recess 170: 65 μm

In addition, for the connecting portion of peristome of recess 170 and the connecting portion of the bottom of recess 170 at the connecting portion 176 of peristome 175, coating 12 and the interface of sandwich layer 13, their minimum profile curvature radius is 1 μm.

(embodiment 1-5)

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 100 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 120 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 200 μm

The depth capacity of recess 170: 65 μm

In addition, for the connecting portion of peristome of recess 170 and the connecting portion of the bottom of recess 170 at the connecting portion 176 of peristome 175, coating 12 and the interface of sandwich layer 13, their minimum profile curvature radius is 100 μm.

(embodiment 1-6)

Except changing the shape of laser machining mask, and the shape of the recess of formation be altered to following shape and the distance P between core is set to beyond 500 μm, obtaining optical waveguide identically with embodiment 1-1.

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 300 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 340 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 640 μm

The depth capacity of recess 170: 65 μm

In addition, for the connecting portion of peristome of recess 170 and the connecting portion of the bottom of recess 170 at the connecting portion 176 of peristome 175, coating 12 and the interface of sandwich layer 13, their minimum profile curvature radius is 300 μm.

(embodiment 1-7)

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 450 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 580 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 900 μm

The depth capacity of recess 170: 65 μm

In addition, for the connecting portion of peristome of recess 170 and the connecting portion of the bottom of recess 170 at the connecting portion 176 of peristome 175, coating 12 and the interface of sandwich layer 13, their minimum profile curvature radius is 450 μm.

(embodiment 1-8)

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 100 μm

The maximum length of the Y-direction of recess 170: 900 μm

The maximum length of the X-direction of recess 170: 200 μm

The depth capacity of recess 170: 65 μm

(embodiment 2-1)

The shape > of < recess

The schematic diagram of peristome 175: Figure 10 (a)

The minimum profile curvature radius r of connecting portion 178 ₂: 5 μm

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 125 μm

The depth capacity of recess 170: 65 μm

(embodiment 2-2)

The shape > of < recess

The schematic diagram of peristome 175: Figure 10 (a)

The minimum profile curvature radius r of connecting portion 178 ₂: 20 μm

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 125 μm

The depth capacity of recess 170: 65 μm

(embodiment 2-3)

The shape > of < recess

The schematic diagram of peristome 175: Figure 10 (a)

The minimum profile curvature radius r of connecting portion 178 ₂: 40 μm

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 125 μm

The depth capacity of recess 170: 65 μm

(embodiment 2-4)

The shape > of < recess

The schematic diagram of peristome 175: Figure 10 (a)

The minimum profile curvature radius r of connecting portion 178 ₂: 100 μm

The maximum length of the Y-direction of recess 170: 900 μm

The maximum length of the X-direction of recess 170: 200 μm

The depth capacity of recess 170: 65 μm

(embodiment 3-1)

In the operation forming recess, except formed the recess of following shape by cut and grinding except, obtain optical waveguide identically with embodiment 1-1.

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 40 μm

The minimum profile curvature radius r of connecting portion 176 ₁: 80 μm

The minimum profile curvature radius of the connecting portion of the peristome of the recess 170 at the interface of coating 12 and sandwich layer 13: 80 μm

The connecting portion minimum profile curvature radius of the bottom of recess 170: 40 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 45 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 160 μm

The depth capacity of recess 170: 65 μm

(embodiment 3-2)

In the operation forming recess, except being formed the recess of following shape by cut and grinding and being set to except 500 μm by the distance P between core, obtain optical waveguide identically with embodiment 1-1.

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 300 μm

The minimum profile curvature radius r of connecting portion 176 ₁: 475 μm

The minimum profile curvature radius of the connecting portion of the peristome of the recess 170 at the interface of coating 12 and sandwich layer 13: 475 μm

The connecting portion minimum profile curvature radius of the bottom of recess 170: 300 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 300 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 950 μm

The depth capacity of recess 170: 65 μm

(embodiment 4)

In the present embodiment, form recess except the side portion of being coated on the extended line of core and change the shape of laser machining mask, the shape of the recess of formation being altered to beyond following shape, obtaining optical waveguide identically with embodiment 1-1.

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 20 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 20 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 115 μm

The depth capacity of recess 170: 65 μm

(embodiment 5-1)

In the present embodiment, except after by orthogonal with the upper surface of coating 12 and parallel with the length direction of core 14 plane cutting, it is the leg-of-mutton shape on summit and the shape of change laser machining mask that the section shape of recess becomes with bottom, the shape of the recess of formation is altered to beyond following shape, obtains optical waveguide identically with embodiment 1-1.

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 20 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 40 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 115 μm

The depth capacity of recess 170: 65 μm

(embodiment 5-2)

Except changing the shape of laser machining mask, and the shape of the recess of formation being altered to beyond following shape, obtaining optical waveguide identically with embodiment 5-1.

The shape > of < recess

The schematic diagram of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 100 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 150 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 200 μm

The depth capacity of recess 170: 65 μm

(embodiment 6-1)

The shape > of < recess

The schematic diagram of peristome 175: Figure 10 (b)

The minimum profile curvature radius r of the acutangulate connecting portion 178 of shape ₂': 0.5 μm

The minimum profile curvature radius r of the obtuse-angulate connecting portion 178 of shape ₂": 15.4 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 14.2 μm)

The maximum length of the Y-direction of recess 170: 80 μm

The maximum length of the X-direction of recess 170: 105 μm

The depth capacity of recess 170: 60 μm

In addition, for the connecting portion of peristome of recess 170 and the connecting portion of the bottom of recess 170 at the connecting portion 176 of peristome 175, coating 12 and the interface of sandwich layer 13, their minimum profile curvature radius is consistent with corresponding connecting portion 178.

(embodiment 6-2)

The shape > of < recess

The schematic diagram of peristome 175: Figure 10 (b)

The minimum profile curvature radius r of the acutangulate connecting portion 178 of shape ₂': 1.5 μm

The minimum profile curvature radius r of the obtuse-angulate connecting portion 178 of shape ₂": 45.3 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 50.46 μm)

The maximum length of the Y-direction of recess 170: 80 μm

The maximum length of the X-direction of recess 170: 135 μm

The depth capacity of recess 170: 60 μm

(embodiment 6-3)

The shape > of < recess

The schematic diagram of peristome 175: Figure 10 (b)

The minimum profile curvature radius r of the acutangulate connecting portion 178 of shape ₂': 3.3 μm

The minimum profile curvature radius r of the obtuse-angulate connecting portion 178 of shape ₂": 8.5 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 4.3 μm)

The maximum length of the Y-direction of recess 170: 140 μm

The maximum length of the X-direction of recess 170: 160 μm

The depth capacity of recess 170: 60 μm

In addition, for the connecting portion of peristome of recess 170 and the connecting portion of the bottom of recess 170 at the connecting portion 176 of peristome 175, coating 12 and the interface of sandwich layer 13, their connecting portion 178 of minimum profile curvature radius all with corresponding is consistent.

(embodiment 6-4)

The shape > of < recess

The schematic diagram of peristome 175: Figure 10 (b)

The minimum profile curvature radius r of the acutangulate connecting portion 178 of shape ₂': 4.2 μm

The minimum profile curvature radius r of the obtuse-angulate connecting portion 178 of shape ₂": 10.3 μm

The maximum length of the Y-direction of recess 170: 140 μm

The maximum length of the X-direction of recess 170: 160 μm

The depth capacity of recess 170: 60 μm

(embodiment 6-5)

The shape > of < recess

The schematic diagram of peristome 175: Figure 10 (b)

The minimum profile curvature radius r of the acutangulate connecting portion 178 of shape ₂': 6.2 μm

The minimum profile curvature radius r of the obtuse-angulate connecting portion 178 of shape ₂": 19.1 μm

The maximum length of the Y-direction of recess 170: 140 μm

The maximum length of the X-direction of recess 170: 160 μm

The depth capacity of recess 170: 60 μm

(embodiment 6-6)

The shape > of < recess

The schematic diagram of peristome 175: Figure 10 (b)

The minimum profile curvature radius r of the acutangulate connecting portion 178 of shape ₂': 16.0 μm

The minimum profile curvature radius r of the obtuse-angulate connecting portion 178 of shape ₂": 35.0 μm

The maximum length of the Y-direction of recess 170: 140 μm

The maximum length of the X-direction of recess 170: 160 μm

The depth capacity of recess 170: 60 μm

(embodiment 6-7)

The shape > of < recess

The schematic diagram of peristome 175: Figure 10 (b)

The minimum profile curvature radius r of the acutangulate connecting portion 178 of shape ₂': 18.9 μm

The minimum profile curvature radius r of the obtuse-angulate connecting portion 178 of shape ₂": 40.6 μm

The maximum length of the Y-direction of recess 170: 140 μm

The maximum length of the X-direction of recess 170: 160 μm

The depth capacity of recess 170: 60 μm

(embodiment 6-8)

The shape > of < recess

The schematic diagram of peristome 175: Figure 10 (b)

The minimum profile curvature radius r of the acutangulate connecting portion 178 of shape ₂': 43.0 μm

The minimum profile curvature radius r of the obtuse-angulate connecting portion 178 of shape ₂": 147.0 μm

The maximum length of the Y-direction of recess 170: 140 μm

The maximum length of the X-direction of recess 170: 160 μm

The depth capacity of recess 170: 60 μm

(comparative example 1)

The shape > of < recess

The concise and to the point shape of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 0.5 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 3.13 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 510 μm

The depth capacity of recess 170: 65 μm

In addition, for the connecting portion of peristome of recess 170 and the connecting portion of the bottom of recess 170 at the connecting portion 176 of peristome 175, coating 12 and the interface of sandwich layer 13, their minimum profile curvature radius is 0.5 μm.

(comparative example 2)

Except being set to except 500 μm by the distance P between core, obtain optical waveguide identically with comparative example 1.

(comparative example 3)

The shape > of < recess

The concise and to the point shape of peristome 175: Fig. 4

The minimum profile curvature radius r of connecting portion 178 ₂: 510 μm

The contour shape of the edge of peristome 175: arcuation (radius-of-curvature of arc 510 μm)

The maximum length of the Y-direction of recess 170: 210 μm

The maximum length of the X-direction of recess 170: 520 μm

The depth capacity of recess 170: 65 μm

In addition, for the connecting portion of peristome of recess 170 and the connecting portion of the bottom of recess 170 at the connecting portion 176 of peristome 175, coating 12 and the interface of sandwich layer 13, their minimum profile curvature radius is 510 μm.

(comparative example 4)

Except being set to except 500 μm by the distance P between core, obtain optical waveguide identically with comparative example 3.

2. the evaluation of optical waveguide

For the optical waveguide obtained in each embodiment and each comparative example, for temperature cycling test, the transmission characteristic before comparison test and after test, thus have rated permanance.In addition, the test condition of temperature cycling test is as follows.

The test condition > of < temperature cycling test

Temperature :-40 ~ 125 DEG C

Period: 500 circulations (each 30 minutes of high temperature, low temperature)

Evaluate characteristic: insertion loss

The result evaluated is shown in table 1, table 2, table 3.In addition, in table 1, table 2, table 3, so-called schematic diagram represents the schematic diagram of peristome 175, so-called r ₂represent the minimum profile curvature radius of connecting portion 178, so-called r ₁represent the minimum profile curvature radius of connecting portion 176, so-called r ₃represent the minimum profile curvature radius of the connecting portion of the peristome of the recess 170 at the interface of coating 12 and sandwich layer 13, so-called r ₄represent the connecting portion minimum profile curvature radius of the bottom of recess 170, so-called edge profile represents the contour shape of the edge of peristome 175, the radius-of-curvature of so-called arc represents the radius-of-curvature of the arc of the edge of peristome 175, so-called Y represents the maximum length of the Y-direction of recess 170, so-called X represents the maximum length of the X-direction of recess 170, the depth capacity of so-called depth representing recess 170, so-called P represents the distance P between core.In addition, so-called r ₂' represent at the minimum profile curvature radius of the acutangulate connecting portion 178 of roughly trapezoidal middle shape, r ₂" represent at the minimum profile curvature radius of the obtuse-angulate connecting portion 178 of roughly trapezoidal middle shape.

[table 1]

[table 2]

[table 3]

In addition, also with embodiment 1-1, condition that 1-2,1-3 and 2-4 are identical, to possess supporting diaphragm 2 as shown in Figure 7 and cover optical waveguide 1-1 ', the 1-2 ' of diaphragm 3,1-3 ' and 2-4 carried out identical evaluation.Now, the minimum profile curvature radius of the connecting portion of the peristome of the recess of through covering diaphragm 3 is identical with the minimum profile curvature radius r2 of each connecting portion 178.The results are shown in table 4.

[table 4]

, in the optical waveguide obtained in embodiments, before and after the test of temperature cycling test, there is not change in the value of insertion loss in the result evaluated.

On the other hand, in the optical waveguide obtained in comparative example 1 ~ 4, after temperature cycling test, insertion loss increase is larger.After calculating variable quantity, reach 20 ~ 100% of the measured value before test.For the optical waveguide through-thickness cutting recess after test, after observation section, think and to be peeling at the interface of coating and sandwich layer.

Accordingly, think according to optical waveguide of the present invention, be namely used in the reduction that temperature cycling test also can suppress transmission characteristic, reflection characteristic, thus the optical communication of high-quality can be carried out.

[industrial utilizes possibility]

According to the present invention, the reduction that can obtain transmission characteristic is suppressed thus carry out the optical waveguide of the optical communication of high-quality.In addition, according to the present invention, the electronic equipment that the reliability that possesses above-mentioned optical waveguide is higher can be obtained.

Therefore, the present invention can preferably be used in optical waveguide and electronic equipment, thus industrially of crucial importance.

[symbol description]

1 ... optical waveguide; 2 ... supporting diaphragm; 3 ... cover diaphragm; 10 ... duplexer; 11 ... coating; 12 ... coating; 13 ... sandwich layer; 14 ... core; 15 ... side is coated to portion; 170 ... recess; 171 ... dip plane; 171a ... upper end, dip plane; 171a ' ... the terminal in left side; 171a " ... the terminal on right side; 171b ... straight-line segment; 171b ' ... the terminal in left side; 171b " ... the terminal on right side; 172 ... dip plane; 172a ... upper end, dip plane; 172a ' ... the terminal in left side; 172a " ... the terminal on right side; 172b ... straight-line segment; 172b ' ... the terminal in left side; 172b " ... the terminal on right side; 173 ... vertical surface; 173 ' ... dip plane; 173a ... vertical surface upper end; 173b ... arc; 174 ... vertical surface; 174 ' ... dip plane; 174a ... vertical surface upper end; 174b ... arc; 175 ... peristome; 176 ... connecting portion; 177 ... peristome; 178 ... connecting portion; 900 ... laser machine; 910 ... laser machining mask; 911 ... occlusion part; 912 ... through portion; L ... laser instrument; R1, r2 ... radius-of-curvature.

Claims

1. an optical waveguide, its have the sandwich layer being formed with core, the one side being laminated in described sandwich layer the first coating, be laminated in the another side of described sandwich layer the second coating and respectively through described second coating and described sandwich layer until the blank part of described first coating

The feature of described optical waveguide is,

The part of the internal face of described blank part by relative to comprising the planar tilt at described sandwich layer and the interface of described first coating and the dip plane intersected is formed,

In described plane, described dip plane and described internal face, be 1 ~ 500 μm with the minimum profile curvature radius of the connecting portion of described dip plane other parts of continuous print.

2. optical waveguide according to claim 1, is characterized in that, is configured to:

Described blank part is arranged on the extended line of the length direction of described core or described core,

The optical axis of the transversal described core in described dip plane or its extended line.

3. optical waveguide according to claim 1 and 2, is characterized in that,

In the described blank part in the face of the side contrary with described sandwich layer in described second coating, described dip plane and described internal face, be 1 ~ 500 μm with the minimum profile curvature radius of the connecting portion of described dip plane other parts of continuous print.

4. the optical waveguide according to any one of claims 1 to 3, is characterized in that,

In the described blank part at the interface of described second coating and described sandwich layer, described dip plane and described internal face, be 1 ~ 500 μm with the minimum profile curvature radius of the connecting portion of described dip plane other parts of continuous print.

5. the optical waveguide according to any one of Claims 1 to 4, is characterized in that,

There is the overlayer in the face of the side contrary with described sandwich layer being laminated in described second coating.

6. the optical waveguide according to any one of Claims 1 to 5, is characterized in that,

The internal face of described blank part comprises relative to described plane the vertical surface of the angular cross with the angle of acute side being 60 ~ 90 °.

7. the optical waveguide according to any one of claim 1 ~ 6, is characterized in that,

Described dip plane relative to described plane with the angular cross of 20 ~ 90 °.

8. the optical waveguide according to claim 6 or 7, is characterized in that, is configured to:

The internal face of described blank part comprises two described dip plane and two described vertical surfaces,

Described blank part within it wall by the section after described plane cutting, described dip plane each other and described vertical surface opposed separately from each other.

9. the optical waveguide according to any one of claim 6 ~ 8, is characterized in that,

Described vertical surface bends along the length direction of optical waveguide.

10. the optical waveguide according to any one of Claims 1 to 5, is characterized in that, is configured to:

The internal face of described blank part becomes acute angle with the angle of the angle between described plane that is the side contrary with described blank part side.

11. 1 kinds of electronic equipments, is characterized in that,

Possesses the optical waveguide according to any one of claim 1 ~ 10.