CN105047763A - Crystalline silicon texturing groove - Google Patents
Crystalline silicon texturing groove Download PDFInfo
- Publication number
- CN105047763A CN105047763A CN201510541923.2A CN201510541923A CN105047763A CN 105047763 A CN105047763 A CN 105047763A CN 201510541923 A CN201510541923 A CN 201510541923A CN 105047763 A CN105047763 A CN 105047763A
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- CN
- China
- Prior art keywords
- tank
- crystal silicon
- texturing slot
- acid
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 4
- 238000005530 etching Methods 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 57
- 229910052710 silicon Inorganic materials 0.000 claims description 57
- 239000010703 silicon Substances 0.000 claims description 57
- 239000013078 crystal Substances 0.000 claims description 56
- 239000002253 acid Substances 0.000 claims description 32
- 239000007788 liquid Substances 0.000 claims description 20
- 230000003197 catalytic effect Effects 0.000 claims description 14
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 9
- 229910001431 copper ion Inorganic materials 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 8
- 239000003513 alkali Substances 0.000 claims description 5
- 230000005587 bubbling Effects 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 238000006555 catalytic reaction Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 235000008216 herbs Nutrition 0.000 description 9
- 210000002268 wool Anatomy 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a crystalline silicon texturing groove, which comprises a metal catalysis etching groove, a residual metal cleaning tank, a secondary cleaning tank and a drying pretreatment tank, which are sequentially formed along the operation direction of crystalline silicon. The crystalline silicon texturing groove provided by the invention is low in cost and good in universality, and can be applied to texturing processes of monocrystalline silicon and polycrystalline silicon.
Description
Technical field
The present invention relates to etching device, be specifically related to a kind of texturing slot.
Background technology
In photovoltaic industry, in order to improve the conversion efficiency of silica-based solar cell, need to carry out making herbs into wool etching processing to silicon chip, thus obtain antireflective suede structure.
, there is two kinds of etching devices, i.e. groove type etching equipment and chain-type texture-etching equipment in the market in the principle of the making herbs into wool of based single crystal silicon and polysilicon making herbs into wool.Wherein groove type etching equipment is used for the making herbs into wool of monocrystalline silicon alkali, thus obtains pyramid shape matte; Chain-type texture-etching equipment is used for the making herbs into wool of polycrystalline silicic acid, thus obtains worm channel shape matte.
But there is not the etching device that can carry out making herbs into wool respectively to polysilicon and monocrystalline silicon in the market.
Summary of the invention
The technical problem to be solved in the present invention be to provide a kind of can to the texturing slot of polysilicon and monocrystalline silicon making herbs into wool.
An embodiment provides a kind of crystal silicon texturing slot, comprise metal catalytic etching groove, residual metal rinse bath, secondary cleaning groove and dry pretreatment tank that the direction of operating along described crystal silicon is arranged in order.
Preferably, described metal catalytic etching groove comprises the sour texturing slot and the first tank that the direction of operating along described crystal silicon arranges.
Preferably, described metal catalytic etching groove also comprises: attemperating unit, and it is for controlling the temperature constant of the acid Woolen-making liquid in described sour texturing slot; And be positioned at the first shower nozzle of described first tank overthe openings.
Preferably, described metal catalytic etching groove also comprises the bubbling device being arranged in described sour texturing slot.
Preferably, described metal catalytic etching groove also comprises:
Copper ion checkout gear, the electrode of described copper ion checkout gear inserts in the acid Woolen-making liquid in described sour texturing slot;
Fluorine ion checkout gear, the electrode of described fluorine ion checkout gear inserts in the acid Woolen-making liquid in described sour texturing slot; And
Acid Woolen-making liquid conveying device, it for carrying acid Woolen-making liquid in described sour texturing slot.
Preferably, described residual metal rinse bath comprises the first acid tank and the second tank that the direction of operating along described crystal silicon arranges.
Preferably, described residual metal rinse bath also comprises the ultrasonic cleaning equipment being arranged in described first acid tank and the second shower nozzle being positioned at described second tank overthe openings.
Preferably, described secondary cleaning groove comprises the second acid tank, the 3rd tank, alkali groove and the 4th tank that the direction of operating along described crystal silicon arranges.
Preferably, described secondary cleaning groove also comprises the 3rd shower nozzle and the 4th shower nozzle of the overthe openings laying respectively at described 3rd tank and the 4th tank.
Preferably, described dry pretreatment tank comprises: the 3rd acid tank that the direction of operating along described crystal silicon arranges and the 5th tank; And be positioned at the 5th shower nozzle of described 5th tank overthe openings.
Crystal silicon texturing slot cost of the present invention is low, versatility good, can be used in the process for etching of monocrystalline silicon and polysilicon.
Accompanying drawing explanation
Referring to accompanying drawing, embodiments of the present invention is further illustrated, wherein:
Fig. 1 is the vertical view of the crystal silicon texturing slot according to first embodiment of the invention.
Fig. 2 is the vertical view of the crystal silicon texturing slot according to second embodiment of the invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with accompanying drawing, by specific embodiment, the present invention is described in more detail.
Fig. 1 is the vertical view of the crystal silicon texturing slot according to present pre-ferred embodiments.As shown in Figure 1, crystal silicon texturing slot 10 comprises metal catalytic etching groove 11, residual metal rinse bath 12, secondary cleaning groove 13 and the dry pretreatment tank 14 that the direction of operating D along crystal silicon is arranged in order.Wherein the direction of operating D of crystal silicon is the movement of crystal silicon on process for etching line or the direction of motion.
Metal catalytic etching groove 11 comprises the sour texturing slot 111 and tank 112 that the direction of operating D along crystal silicon arranges; The attemperating unit (Fig. 1 is not shown) also comprising the temperature for controlling the acid Woolen-making liquid in sour texturing slot 111, the bubbling device 113 being arranged in sour texturing slot 111 and be positioned at the shower nozzle 114 of tank 112 overthe openings.When making, first crystal silicon is placed in sour texturing slot 111, because bubbling device 113 is for blasting bubble in oxytropism Woolen-making liquid, thus the surperficial inverted pyramid matte obtaining being evenly distributed under acid Woolen-making liquid effect of crystal silicon.Crystal silicon after making herbs into wool is moved in tank 112, removed the acid Woolen-making liquid on crystal silicon surface by shower nozzle 114 to crystal silicon Air washer.
Residual metal rinse bath 12 comprises the acid tank 121 and tank 122 that the direction of operating D along crystal silicon arranges; Also comprise the ultrasonic cleaning equipment 123 being arranged in acid tank 121 and the shower nozzle 124 being positioned at tank 122 overthe openings.Crystal silicon is moved to and is equipped with in the acid tank 121 of salpeter solution, under salpeter solution and ultrasonic cleaning effect, crystal silicon surface residual metal oxygen is changed into metal ion and enters in salpeter solution.Afterwards crystal silicon is moved in tank 122, removed the acidic liquid on crystal silicon surface by shower nozzle 124 to crystal silicon Air washer.
Secondary cleaning groove 13 comprises acid tank 131, tank 132, alkali groove 133 and the tank 134 that the direction of operating D along crystal silicon arranges; Also comprise the shower nozzle 135 being positioned at tank 132 overthe openings and the shower nozzle 136 being positioned at tank 134 overthe openings.Crystal silicon is placed on successively acid tank 131, tank 132, alkali groove 133 and tank 134 and carries out twice cleaning, to remove the various attachments on crystal silicon surface.
Dry pretreatment tank 14 comprises the acid tank 141 and tank 142 that the direction of operating D along crystal silicon arranges; Also comprise the shower nozzle 143 being positioned at tank 142 overthe openings.Crystal silicon is moved in the acid tank 141 that hydrofluoric acid is housed and process, finally move in tank 142 and use washed with de-ionized water hydrofluoric acid, carrying out crystal silicon, in follow-up dried journey, can ensureing that crystal silicon surface does not exist washmarking mark like this.
Fig. 2 is the vertical view of the crystal silicon texturing slot according to second embodiment of the invention.The crystal silicon texturing slot 20 of Fig. 2 is substantially identical with the crystal silicon texturing slot 10 of Fig. 1, difference is, metal catalytic etching groove 11 also comprises copper ion checkout gear 115 and fluorine ion checkout gear 116, and it can select existing copper ion concentration analyzer and Concentration Measuring Apparatus for Fl-ion on market.The electrode of copper ion checkout gear 115 and fluorine ion checkout gear 116 inserts in acid Woolen-making liquid, is respectively used to the concentration of copper ion and fluorine ion in detection of acidic Woolen-making liquid.Metal catalytic etching groove 11 also comprises acid Woolen-making liquid conveying device 117, for carrying acid Woolen-making liquid constantly or discontinuously in sour texturing slot 111, makes the concentration of copper ion and fluorine ion in predetermined scope.
Carrying out in making herbs into wool process to crystal silicon, designing the spatial accommodation size of each groove according to the size and number of the crystal silicon of a batch process.Each groove can be selected and can the material of simultaneously acid-fast alkali-proof make.
Crystal silicon texturing slot 10,20 of the present invention can be used in the process for etching of monocrystalline silicon and polysilicon industrialization, and universal performance is good, solves the problem that existing etching device purposes is single.Crystal silicon texturing slot 10,20 of the present invention only has one for controlling the attemperating unit of the temperature constant of acid Woolen-making liquid in sour texturing slot 111, and therefore equipment cost is lower.
Although the present invention is described by preferred embodiment, but the present invention is not limited to embodiment as described herein, also comprises done various change and change without departing from the present invention.
Claims (10)
1. a crystal silicon texturing slot, is characterized in that, comprises metal catalytic etching groove, residual metal rinse bath, secondary cleaning groove and dry pretreatment tank that the direction of operating along described crystal silicon is arranged in order.
2. crystal silicon texturing slot according to claim 1, is characterized in that, described metal catalytic etching groove comprises the sour texturing slot and the first tank that the direction of operating along described crystal silicon arranges.
3. crystal silicon texturing slot according to claim 2, is characterized in that, described metal catalytic etching groove also comprises:
Attemperating unit, it is for controlling the temperature constant of the acid Woolen-making liquid in described sour texturing slot; And
Be positioned at the first shower nozzle of described first tank overthe openings.
4. crystal silicon texturing slot according to claim 2, is characterized in that, described metal catalytic etching groove also comprises the bubbling device being arranged in described sour texturing slot.
5. crystal silicon texturing slot according to claim 2, is characterized in that, described metal catalytic etching groove also comprises:
Copper ion checkout gear, the electrode of described copper ion checkout gear inserts in the acid Woolen-making liquid in described sour texturing slot;
Fluorine ion checkout gear, the electrode of described fluorine ion checkout gear inserts in the acid Woolen-making liquid in described sour texturing slot; And
Acid Woolen-making liquid conveying device, it for carrying acid Woolen-making liquid in described sour texturing slot.
6. crystal silicon texturing slot according to any one of claim 1 to 5, is characterized in that, described residual metal rinse bath comprises the first acid tank and the second tank that the direction of operating along described crystal silicon arranges.
7. crystal silicon texturing slot according to claim 6, is characterized in that, described residual metal rinse bath also comprises the ultrasonic cleaning equipment being arranged in described first acid tank and the second shower nozzle being positioned at described second tank overthe openings.
8. crystal silicon texturing slot according to any one of claim 1 to 5, is characterized in that, described secondary cleaning groove comprises the second acid tank, the 3rd tank, alkali groove and the 4th tank that the direction of operating along described crystal silicon arranges.
9. crystal silicon texturing slot according to claim 8, is characterized in that, described secondary cleaning groove also comprises the 3rd shower nozzle and the 4th shower nozzle of the overthe openings laying respectively at described 3rd tank and the 4th tank.
10. crystal silicon texturing slot according to any one of claim 1 to 5, is characterized in that, described dry pretreatment tank comprises:
The 3rd acid tank arranged along the direction of operating of described crystal silicon and the 5th tank; And
Be positioned at the 5th shower nozzle of described 5th tank overthe openings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510541923.2A CN105047763A (en) | 2015-08-28 | 2015-08-28 | Crystalline silicon texturing groove |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510541923.2A CN105047763A (en) | 2015-08-28 | 2015-08-28 | Crystalline silicon texturing groove |
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| CN105047763A true CN105047763A (en) | 2015-11-11 |
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| CN201510541923.2A Pending CN105047763A (en) | 2015-08-28 | 2015-08-28 | Crystalline silicon texturing groove |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932108A (en) * | 2016-06-13 | 2016-09-07 | 中国科学院物理研究所 | Chain crystalline silicon texturing equipment and preparation method |
| CN106449878A (en) * | 2016-10-31 | 2017-02-22 | 苏州宝馨科技实业股份有限公司 | Black silicon preparing method, fluffing machine and black silicon manufactured through preparing method |
| WO2017035905A1 (en) * | 2015-09-06 | 2017-03-09 | 常州捷佳创精密机械有限公司 | Monocrystal and polycrystal texturing apparatus |
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2015
- 2015-08-28 CN CN201510541923.2A patent/CN105047763A/en active Pending
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017035905A1 (en) * | 2015-09-06 | 2017-03-09 | 常州捷佳创精密机械有限公司 | Monocrystal and polycrystal texturing apparatus |
| US10177013B2 (en) | 2015-09-06 | 2019-01-08 | Changzhou S.C Exact Equipment Co., Ltd. | Monocrystal and polycrystal texturing device |
| CN105932108A (en) * | 2016-06-13 | 2016-09-07 | 中国科学院物理研究所 | Chain crystalline silicon texturing equipment and preparation method |
| CN106449878A (en) * | 2016-10-31 | 2017-02-22 | 苏州宝馨科技实业股份有限公司 | Black silicon preparing method, fluffing machine and black silicon manufactured through preparing method |
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Effective date of registration: 20161008 Address after: Baoan District Songgang Street Tangxia Shenzhen 518105 Guangdong province with rich industrial zone Chung Run Road No. 2. Applicant after: Shenzhen Gold Stone Technology Co., Ltd Address before: 100190 Beijing City, Haidian District Zhongguancun South Street No. 8 Applicant before: Research Institute of Physics, Chinese Academy of Sciences |
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Application publication date: 20151111 |