CN204118047U - A kind of gas shower device - Google Patents
A kind of gas shower device Download PDFInfo
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- CN204118047U CN204118047U CN201420627197.7U CN201420627197U CN204118047U CN 204118047 U CN204118047 U CN 204118047U CN 201420627197 U CN201420627197 U CN 201420627197U CN 204118047 U CN204118047 U CN 204118047U
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- gas shower
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Abstract
The utility model discloses a kind of gas shower device, comprise spray system and the exhausting system of corresponding setting up and down, described spray system comprises intake interface, spray head, is located at the side air draft passage outside spray head and is communicated with the exhausting interface one of side air draft passage, described exhausting system comprises the exhausting groove, the exhausting interface two being communicated with exhausting groove and the air blast that are communicated with described spray system side air draft passage, and air blast is connected respectively with exhausting interface one, exhausting interface two.The utility model structure is simple, easy to operate, and compatibility is strong, can use, not only may be used for the batch process on oxidation, passivated semiconductor surface in conjunction with plurality of devices and gas, can also realize multiple uses such as drying up after body surface purges clean and cleaning.
Description
Technical field
The utility model relates to and belongs to semiconductor equipment manufacture field, is specifically related to a kind of gas shower device.
Background technology
Silicon materials are important materials of semiconductor applications, due to the existence of the defect levels such as dangling bonds, dislocation, chemical residue, silicon face is made to there is a large amount of complex centres, the principal element become and reduce semiconductor minority carrier lifetime, increasing recombination-rate surface, has had a strong impact on the quality of product.High-quality semiconductor product is all utilize good surface passivation technique to reduce the surface activity of semiconductor in the market, and the recombination velocity on surface is reduced.Its major way is the dangling bonds arranging saturated semiconductor surface place, reduces surface activity, increases the cleaning procedure on surface, avoids introducing impurity due to superficial layer and forming complex centre, reduces the surface recombination velocity of minority carrier with this.
Carrying out saturated by oxidation to silicon chip surface dangling bonds is one of Main Means of fix the defect, but in semicon industry, the oxidation of silicon chip mainly utilizes oxygen to realize in high temperature oxidation furnace at present, this mode is due to complicated operation, equipment cost is high, the factors such as energy consumption is high, rate of finished products is low and be not suitable for batch production, so the paralysis facility seeking a kind of applicable batch production becomes an industry difficult problem.
Summary of the invention
Goal of the invention: for the deficiencies in the prior art, the utility model provides a kind of gas shower device, and structure is simple, and compatibility is strong, can realize the batch process to silicon chip under present technical conditions.
Technical scheme: gas shower device described in the utility model, comprise spray system and the exhausting system of corresponding setting up and down, described spray system comprises intake interface, spray head, is located at the side air draft passage outside spray head and is communicated with the exhausting interface one of side air draft passage, described exhausting system comprises the exhausting groove, the exhausting interface two being communicated with exhausting groove and the air blast that are communicated with described spray system side air draft passage, and air blast is connected respectively with exhausting interface one, exhausting interface two.
Described spray head comprises the current-sharing pipe be connected with described intake interface and the spray panel be located at below current-sharing pipe.
Described side air draft passage is inverse u shape passage, is made up of outer U-shaped plate and interior U-shaped plate; Described exhausting groove is " U " type passage, is made up of outer U-type groove and interior U-type groove.
Distance between described outer U-shaped plate and described interior U plate is 3-10cm.
Described air blast is connected with described spray system exhausting interface one, described exhausting system exhausting interface two with air draft pipe one, air draft pipe two respectively by threeway.
Described intake interface is the fast interface of multiple caliber or hose connection.
Described current-sharing pipe is connected with described intake interface by connecting line, and connecting line is the gas pipeline that in PU, PVC, silica gel, arbitrary material is made.
Described spray panel is made up of the sieve aperture evenly distributed by matrix, and the diameter of sieve aperture is 0.5-1.5mm.
Distance between described spray panel and described current-sharing pipe is 1-5cm.
Described spray system both sides are extended with wing plate, and wing plate is provided with the nut one regulating height distance, and described exhausting system is provided with the nut two regulating height distance.
The utility model is arranged on exit position, crystal silicon solar energy battery etch cleaner operation discharging area, make discharging area roller just in time between spray system and exhausting system, crystal silicon solar energy battery after etch cleaner eliminates surface of crystalline silicon impurity fast under effect of the present utility model, avoid the formation in complex centre and the shortening of semiconductor minority carrier lifetime, effectively improve quality and the useful life of crystalline silicon.In addition the utility model can use in conjunction with other semiconductor equipments, dry up after realizing object cleaning, semiconductor surface oxidation, the multiple use such as passivation and surface cleaning.
Beneficial effect: compared with prior art, advantage of the present utility model:
1, structure is simple, cost is low, easy to operate, safeguard simple, and stabilization of equipment performance and good process repeatability, with existing technique perfect adaptation, can realize producing in batches, applicable large-scale promotion;
2, the utility model can use at normal temperatures, and effective in conjunction with Strong oxdiative gas passivates, energy consumption is low;
3, the utility model compatibility is strong, can use in conjunction with plurality of devices and gas, not only may be used for oxidation, passivated semiconductor surface, can also realize multiple uses such as drying up after body surface purges clean and cleaning.
Accompanying drawing explanation
Fig. 1 is cross section structure schematic diagram of the present utility model;
Wherein, 1---exhausting interface one, 21---intake interface, 2---connecting tube, 3---outer U-shaped plate,
4---interior U-shaped plate, 5---shower plate face, 6---current-sharing pipe, 7---outer U-type groove, 8---interior U-type groove,
9---exhausting interface two, 10---nut two, 11---nut one, 12---air draft pipe, 13---admission line, 14---air draft pipes two.
Fig. 2 is the vertical view of the utility model spray system.
Fig. 3 is shower plate facial plane figure;
Wherein, 51---spray apertures.
Embodiment
Below by accompanying drawing, technical solutions of the utility model are described in detail.
embodiment 1:gas shower device as shown in Figure 1 to Figure 2, comprises spray system and the exhausting system of corresponding setting up and down; Spray system comprises exhausting interface 1, intake interface 21, connecting tube 2, outer U-shaped plate 3, interior U-shaped plate 4, shower plate face 5, current-sharing pipe 6 and nut 1, and exhausting system comprises outer U-type groove 7, interior U-type groove 8, exhausting interface 29, nut 2 10 and external air blast.Outer U-shaped plate 3 is in downward opening " U " template, interior U-shaped plate 4 is also in downward opening " U " template, interior U-shaped plate 4 is located at outer U-shaped plate 3 inside and is kept the parallel distance of 5cm with outer U-shaped plate 3, the top middle portion of outer U-shaped plate 3 is provided with exhausting interface 1, interior U-shaped plate 4 inside is provided with current-sharing pipe 6, the upper end of current-sharing pipe 6 is connected with the intake interface 21 being located at exhausting interface 1 inside by connecting tube 2, the connecting tube that connecting tube 2 is made for PU material, at the bottom opening of interior U-shaped plate 4, spray panel 5 is provided with apart from 3cm place apart from equal discharge orifice 6, the structure of spray panel 5 as shown in Figure 3, be made up of the sieve aperture 51 evenly distributed by matrix, the diameter of sieve aperture 51 is 1mm, spray system both sides are extended with wing plate, wing plate are provided with nut 1, outer U-type groove 7 and interior U-type groove 8 are " U " template of opening upwards, interior U-type groove 8 to be located in outer U-type groove 7 and with outer U-type groove keeping parallelism, a side of outer U-type groove 7 is provided with exhausting interface 29, and the bottom of outer U-type groove 7 is provided with nut 2 10,
The utility model can be used for the oxidation on crystal silicon solar energy battery surface, and be arranged on exit position, crystal silicon solar energy battery etch cleaner operation discharging area during use, installation method is as follows:
(1) exhausting system is placed in below the roller of discharging area, nut 2 10 is set, make discharging area roller lower limb apart from exhausting groove end face 3-5cm, and with air draft pipe 2 14, exhausting interface 29 is connected with air blast;
(2) spray system is placed in position above the roller of discharging area, directly over exhausting system, nut 1 is set, make the bottom surface of spray system apart from the position of roller top edge 0.5-1cm, and with air draft pipe 1, exhausting interface 1 is connected with air blast, be connected with source of the gas by intake interface 21 with admission line 13, admission line 13 is flexible pipe.
Using method: open air blast, pass into the gas with oxidation susceptibility, when the silicon chip that etch cleaner completes is by blanking bench, silicon chip surface can be oxidized by the shower plate be positioned at above discharging area.In addition the utility model can coordinate other semiconductor equipments to use, dry up after realizing object cleaning, semiconductor surface oxidation, the multiple use such as passivation and surface cleaning.
As mentioned above, although represented with reference to specific preferred embodiment and described the utility model, it shall not be construed as the restriction to the utility model self.Under the spirit and scope prerequisite of the present utility model not departing from claims definition, various change can be made in the form and details to it.
Claims (10)
1. a gas shower device, it is characterized in that: the spray system and the exhausting system that comprise corresponding setting up and down, described spray system comprises intake interface, spray head, is located at the side air draft passage outside spray head and is communicated with the exhausting interface one of side air draft passage, described exhausting system comprises the exhausting groove, the exhausting interface two being communicated with exhausting groove and the air blast that are communicated with described spray system side air draft passage, and air blast is connected respectively with exhausting interface one, exhausting interface two.
2. gas shower device according to claim 1, is characterized in that: described spray head comprises the current-sharing pipe be connected with described intake interface and the spray panel be located at below current-sharing pipe.
3. gas shower device according to claim 1, is characterized in that: described side air draft passage is inverse u shape passage, is made up of outer U-shaped plate and interior U-shaped plate; Described exhausting groove is " U " type passage, is made up of outer U-type groove and interior U-type groove.
4. gas shower device according to claim 3, is characterized in that: the distance between described outer U-shaped plate and described interior U plate is 3-10cm.
5. gas shower device according to claim 1, is characterized in that: described air blast is connected with described spray system exhausting interface one, described exhausting system exhausting interface two with air draft pipe one, air draft pipe two respectively by threeway.
6. gas shower device according to claim 1, is characterized in that: described intake interface is the fast interface of multiple caliber or hose connection.
7. gas shower device according to claim 2, is characterized in that: described current-sharing pipe is connected with described intake interface by connecting line, and connecting line is the gas pipeline that in PU, PVC, silica gel, arbitrary material is made.
8. gas shower device according to claim 2, is characterized in that: described spray panel is made up of the sieve aperture evenly distributed by matrix, and the diameter of sieve aperture is 0.5-1.5mm.
9. gas shower device according to claim 2, is characterized in that: the distance between described spray panel and described current-sharing pipe is 1-5cm.
10. gas shower device according to claim 1, is characterized in that: described spray system both sides are extended with wing plate, wing plate is provided with the nut one regulating height distance, and described exhausting system is provided with the nut two regulating height distance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420627197.7U CN204118047U (en) | 2014-10-27 | 2014-10-27 | A kind of gas shower device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420627197.7U CN204118047U (en) | 2014-10-27 | 2014-10-27 | A kind of gas shower device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204118047U true CN204118047U (en) | 2015-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420627197.7U Active CN204118047U (en) | 2014-10-27 | 2014-10-27 | A kind of gas shower device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105839194A (en) * | 2016-05-20 | 2016-08-10 | 苏州中世太新能源科技有限公司 | Passivation gas spraying assembly for silicon wafer surface of photovoltaic cell and gas passivation equipment |
| CN109830573A (en) * | 2019-03-22 | 2019-05-31 | 南京林业大学 | A kind of improved slot type ozone treating system for solar cell silicon wafer processing |
-
2014
- 2014-10-27 CN CN201420627197.7U patent/CN204118047U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105839194A (en) * | 2016-05-20 | 2016-08-10 | 苏州中世太新能源科技有限公司 | Passivation gas spraying assembly for silicon wafer surface of photovoltaic cell and gas passivation equipment |
| CN109830573A (en) * | 2019-03-22 | 2019-05-31 | 南京林业大学 | A kind of improved slot type ozone treating system for solar cell silicon wafer processing |
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| GR01 | Patent grant |