CN105047624B - Igbt chip heat conducting module and preparation method thereof - Google Patents
Igbt chip heat conducting module and preparation method thereof Download PDFInfo
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- CN105047624B CN105047624B CN201510376026.0A CN201510376026A CN105047624B CN 105047624 B CN105047624 B CN 105047624B CN 201510376026 A CN201510376026 A CN 201510376026A CN 105047624 B CN105047624 B CN 105047624B
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- packaging body
- module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Engineering & Computer Science (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The invention discloses igbt chip heat conducting module and preparation method thereof, igbt chip heat conducting module, including IGBT module, the bottom of IGBT module is connected on heat-conducting silicone grease substrate by weld layer B, and side of the heat-conducting silicone grease substrate away from IGBT module is arranged on bottom heat spreader；Also include heat conduction packaging body, heat conduction packaging body is enclosed in IGBT module, and the left surface of heat conduction packaging body is connected with left side heat sink, and the right flank of heat conduction packaging body is connected with right side heat sink；The heat conduction packaging body is formed by material P heat injections, and the material P includes following raw material by weight：Polyphenylene sulfide, ultra-high molecular weight polyethylene, aluminium oxide ceramics powder：80 1 150 parts, heat conductive silica gel：60 1 150 parts, glass fibre, compatilizer, processing aid；The aluminium oxide ceramics powder selects 0.1mm to 0.02mm particle.
Description
Technical field
The present invention relates to igbt chip, specifically possesses igbt chip heat conducting module of heat conduction function and preparation method thereof.
Background technology
Igbt is the compound full-control type voltage driven type work(for having high input impedance and low conduction voltage drop concurrently
Rate semiconductor, it is very suitable for high-tension converter system, such as alternating current generator, frequency converter, Traction Drive field.IGBT is sealed
Package material requirement possesses excellent mechanical property, electrical insulative property, flame-retarding characteristic, anti-aging property and heat-resistant quality, to I
GBT encapsulating material does not require possess its heat conduction and heat radiation, therefore I GBT modules rely on substantially the radiator of bottom and dissipated
Heat, therefore, its radiating efficiency are very low, and the heat dissipation design main study subject to I GBT is to I in the prior art
GBT radiator is studied, and the research object of the present invention is studied for I GBT encapsulating material so that I GBT
Encapsulating material possess good heat conductivility and sealing property and insulating properties so that it is outside that I GBT may rely on it
Packaging body is radiated, and so as to increase heat dissipation region, lifts the radiating efficiency of I GBT modules.
The content of the invention
It is an object of the invention to provide a kind of igbt chip heat conducting module and preparation method thereof, it is proposed that one kind can lead to
The radiating module of I GBT outer enclosure bodies is crossed, so that the packaging body that I GBT can rely on outside I GBT is radiated, is carried
Rise its radiating efficiency.
The purpose of the present invention is achieved through the following technical solutions：
Igbt chip heat conducting module, including IGBT module, the bottom of IGBT module are connected to heat-conducting silicone grease by weld layer B
On substrate, side of the heat-conducting silicone grease substrate away from IGBT module is arranged on bottom heat spreader；Also include heat conduction packaging body, heat conduction
Packaging body is enclosed in IGBT module, and the left surface of heat conduction packaging body is connected with left side heat sink, the right flank of heat conduction packaging body
It is connected with right side heat sink；The heat conduction packaging body by material P heat injection formed, the material P include it is following by weight
The raw material of meter：Polyphenylene sulfide：100 1 300 parts, ultra-high molecular weight polyethylene：100 1 500 parts, aluminium oxide ceramics powder：80
One 150 parts, heat conductive silica gel：60 1 150 parts, glass fibre：100 1 200 parts, compatilizer：10 1 20 parts, processing
10 1 20 parts of auxiliary agent；The aluminium oxide ceramics powder selects 0.1mm to 0.02mm particle.
The present invention by the way that polyphenylene sulfide is compound with ultra-high molecular weight polyethylene, improve the impact resistance of polyphenylene sulfide with
Electrical insulation properties, while add aluminium oxide ceramics powder and heat conductive silica gel and form thermal conduction characteristic, and with glass fiber reinforcement, obtain
Possess excellent mechanical performance, fire resistance, weathering performance, electrical insulation properties, the composite of heat conductivility, expanded polyphenyl
The use range of sulfide material, its application in high-power IGBT encapsulating material is especially expanded.The present invention utilizes aluminum oxide
The thermal conductivity of ceramic powder, utilize the stickiness and thermal conductivity of heat conductive silica gel so that heat conduction packaging body of the invention possesses superpower lead
Hot property, then heat sink and right side heat sink on the left of setting outside the heat conduction packaging body so that the area of dissipation of heat conduction packaging body
Increase, improves excellent radiating effect.Meanwhile the present invention especially employs the aluminum oxide of 0.1mm to 0.02mm particle shape
Ceramic powder, the big heat exchange of the temperature difference can be formed with heat conductive silica gel, so as to increase heat transfer efficiency.
Preferably, the IGBT module includes igbt chip, weld layer A, copper coin A, the ceramics stacked gradually from top to bottom
Substrate, copper coin C, copper coin C are connected on heat-conducting silicone grease substrate by weld layer B, in addition to set copper coin on a ceramic substrate
B, copper coin B are connected by binding line with igbt chip, and the pin of IGBT module passes at the top of heat conduction packaging body.
Preferably, the left side heat sink and right side heat sink are aluminium base, and the surface and right side of left side heat sink dissipate
The surface of hot plate is provided with some projections.
Preferably, described polyphenylene sulfide is injection grade PPS resins, and weight average molecular weight is more than 4.5 ten thousand.
Preferably, described ultra-high molecular weight polyethylene is injection grade UHMWPE resins, and molecular weight is 100 1 300
Ten thousand.
Preferably, described glass fibre is alkali-free, without length of lay fibre, is used after Silane coupling agent KH550 is handled.
Preferably, described compatilizer matches somebody with somebody grafted polyethylene for maleic acid, maleic acid matches somebody with somebody grafting Ethylene propylene copolymer,
Maleic acid matches somebody with somebody one or more of mixtures of the octene copolymer of grafted ethene one.
Preferably, described processing aid is that the weight ratio of organosilane stabilising agent and organo-silicic oil is 1:2 mixing
Thing, preferably described organosilane stabilising agent are that dimethyl is double（4 one phenyl amino phenoxy groups）Silane, dimethyl it is double 4 one "（Cai Ji
One 2）Amino) phenoxy group one or both of silane mixture, preferably described organo-silicic oil is contains superelevation
The third generation silicone plasties lubricant of molal weight organosilicon polymer.
Preferably, the preparation method of described igbt chip heat conducting module, material P preparation manipulation, material P system are included
It is for operation：By described polyphenylene sulfide, ultra-high molecular weight polyethylene, aluminium oxide ceramics powder, heat conductive silica gel, compatilizer and processing
Auxiliary agent is well mixed, then the melt blending extruding pelletization together with glass fibre；Then granulation is heated to molten condition, by band
The IGBT module for having heat-conducting silicone grease substrate is put into mould, and the material P of molten condition is poured into mould, IGBT module is coated, cold
Bottom heat spreader, left side heat sink and right side heat sink are but installed afterwards.
The present invention has the advantages that compared to prior art：So that IGBT module possesses heat conductivility, it is improved
Heat-conducting effect, obtain possessing excellent mechanical performance, fire resistance, weathering performance, electrical insulation properties, the IGBT moulds of heat conductivility
Block.
Brief description of the drawings
Fig. 1 is sectional view of the present invention.
Fig. 2 is overlooking structure figure of the present invention.
Reference in figure is expressed as：1st, heat conduction packaging body；11st, left side heat sink；12nd, right side heat sink；2、
Igbt chip；21st, weld layer A；22nd, binding line；23rd, copper coin A；24th, copper coin B；25th, ceramic substrate；26th, copper coin C；27th, weld
Layer B；28th, heat-conducting silicone grease substrate；29th, bottom heat spreader；3rd, pin.
Embodiment
With reference to embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are unlimited
In this.
Embodiment 1：
As shown in Figure 1 and Figure 2, igbt chip heat conducting module and preparation method thereof, including with lower component：
Igbt chip heat conducting module and preparation method thereof, it is characterised in that：Including IGBT module, the bottom of IGBT module leads to
Cross weld layer B27 to be connected on heat-conducting silicone grease substrate 28, side of the heat-conducting silicone grease substrate 28 away from IGBT module is arranged on bottom
On radiator 29；Also include heat conduction packaging body 1, heat conduction packaging body 1 is enclosed in IGBT module, the left surface of heat conduction packaging body 1
Left side heat sink 11 is connected with, the right flank of heat conduction packaging body 1 is connected with right side heat sink 11；The heat conduction packaging body 1 passes through
Material P heat injections are formed, and the material P includes following raw material by weight：Polyphenylene sulfide：100 1 300 parts, superelevation
Molecular weight polyethylene：100 1 500 parts, aluminium oxide ceramics powder：80 1 150 parts, heat conductive silica gel：60 1 150 parts, glass
Fiber：100 1 200 parts, compatilizer：10 1 20 parts, 10 1 20 parts of processing aid；The aluminium oxide ceramics powder is selected
0.1mm to 0.02mm particle.
The present invention by the way that polyphenylene sulfide is compound with ultra-high molecular weight polyethylene, improve the impact resistance of polyphenylene sulfide with
Electrical insulation properties, while add aluminium oxide ceramics powder and heat conductive silica gel and form thermal conduction characteristic, and with glass fiber reinforcement, obtain
Possess excellent mechanical performance, fire resistance, weathering performance, electrical insulation properties, the composite of heat conductivility, expanded polyphenyl
The use range of sulfide material, its application in high-power IGBT encapsulating material is especially expanded.The present invention utilizes aluminum oxide
The thermal conductivity of ceramic powder, utilize the stickiness and thermal conductivity of heat conductive silica gel so that heat conduction packaging body 1 of the invention possesses superpower lead
Hot property, then heat sink 11 and right side heat sink 12 on the left of setting outside the heat conduction packaging body 1 so that heat conduction packaging body 1 dissipates
Hot area increase, improves excellent radiating effect.Meanwhile the present invention especially employs 0.1mm to 0.02mm particle shape
Aluminium oxide ceramics powder, the big heat exchange of the temperature difference can be formed with heat conductive silica gel, so as to increase heat transfer efficiency.
The heat transfer efficiency of said structure can reach 85%, i.e., can have from heat caused by igbt chip 85% heat from
Distributed at heat conduction packaging body 1, and the packaging body of traditional structure, do not possess heat dispersion.The structure of the present invention can be in length
Kept under the conditions of time service below 50 degree of temperature, and traditional structure IGBT needs to radiate by outer fan, can just be maintained at
Low-temperature condition, while uncontrollable to less than 50 degree of its temperature, general temperature is up to 70 degree.
Preferably, the IGBT module include stack gradually from top to bottom igbt chip 2, weld layer A21, copper coin A23,
Ceramic substrate 25, copper coin C26, copper coin C26 are connected on heat-conducting silicone grease substrate 28 by weld layer B27, in addition to are arranged on pottery
Copper coin B24 on ceramic chip 25, copper coin B24 are connected by binding line 22 with igbt chip 2, and the pin 3 of IGBT module is from heat conduction
The top of packaging body 1 passes.
Preferably, the left side heat sink 11 and right side heat sink 12 are aluminium base, the surface of left side heat sink 11 and
The surface of right side heat sink 12 is provided with some projections, increases the structural strength and radiating effect of aluminium base.
Preferably, described polyphenylene sulfide is injection grade PPS resins, and weight average molecular weight is more than 4,50,000.
Preferably, described ultra-high molecular weight polyethylene is injection grade UHMWPE resins, and molecular weight is 100 1 300
Ten thousand.
Preferably, described glass fibre is alkali-free, without length of lay fibre, is used after Silane coupling agent KH550 is handled.
Preferably, described compatilizer matches somebody with somebody grafted polyethylene for maleic acid, maleic acid matches somebody with somebody grafting Ethylene propylene copolymer,
Maleic acid matches somebody with somebody one or more of mixtures of the octene copolymer of grafted ethene one.
Preferably, described processing aid is that the weight ratio of organosilane stabilising agent and organo-silicic oil is 1:2 mixing
Thing, preferably described organosilane stabilising agent are that dimethyl is double（4 one phenyl amino phenoxy groups）Silane, dimethyl it is double 4 one "（Cai Ji
One 2）Amino) phenoxy group one or both of silane mixture, preferably described organo-silicic oil is contains superelevation
The third generation silicone plasties lubricant of molal weight organosilicon polymer.
Preferably, the preparation method of described igbt chip heat conducting module, material P preparation manipulation, material P system are included
It is for operation：By described polyphenylene sulfide, ultra-high molecular weight polyethylene, aluminium oxide ceramics powder, heat conductive silica gel, compatilizer and processing
Auxiliary agent is well mixed, then the melt blending extruding pelletization together with glass fibre；Then granulation is heated to molten condition, by band
The IGBT module for having heat-conducting silicone grease substrate 28 is put into mould, and the material P of molten condition is poured into mould, IGBT module is coated,
Bottom heat spreader 29, left side heat sink 11 and right side heat sink 12 are installed after cooling.
As described above, the present invention can be then realized well.
Claims (8)
1.IGBT chip heat conducting modules, it is characterised in that：Including IGBT module, the bottom of IGBT module passes through weld layer B（27）
It is connected to heat-conducting silicone grease substrate（28）On, heat-conducting silicone grease substrate（28）Side away from IGBT module is arranged on bottom heat spreader
（29）On；Also include heat conduction packaging body（1）, heat conduction packaging body（1）It is enclosed in IGBT module, heat conduction packaging body（1）Left side
Face is connected with left side heat sink（11）, heat conduction packaging body（1）Right flank be connected with right side heat sink（11）；The heat conduction encapsulation
Body（1）Formed by material P heat injections, the material P includes following raw material by weight：Polyphenylene sulfide：100 1
300 parts, ultra-high molecular weight polyethylene：100 1 500 parts, aluminium oxide ceramics powder：80 1 150 parts, heat conductive silica gel：60 1
150 parts, glass fibre：100 1 200 parts, compatilizer：10 1 20 parts, 10 1 20 parts of processing aid；The oxidation
Aluminium ceramic powder selects 0.1mm to 0.02mm particle；Described ultra-high molecular weight polyethylene is injection grade UHMWPE resins, point
Son amount is 100 1 300 ten thousand.
2. igbt chip heat conducting module according to claim 1, it is characterised in that：The IGBT module is included from top to bottom
The igbt chip stacked gradually（2）, weld layer A（21）, copper coin A（23）, ceramic substrate（25）, copper coin C（26）, copper coin C（26）
Pass through weld layer B（27）It is connected to heat-conducting silicone grease substrate（28）On, in addition to it is arranged on ceramic substrate（25）On copper coin B
（24）, copper coin B（24）Pass through binding line（22）With igbt chip（2）Connection, the pin of IGBT module（3）From heat conduction packaging body
（1）Top pass.
3. igbt chip heat conducting module according to claim 1, it is characterised in that：The left side heat sink（11）And right side
Heat sink（12）It is aluminium base, left side heat sink（11）Surface and right side heat sink（12）Surface be provided with it is some convex
Rise.
4. igbt chip heat conducting module according to claim 1, it is characterised in that：Described polyphenylene sulfide is injection grade
PPS resins, weight average molecular weight are more than 4,50,000.
5. igbt chip heat conducting module according to claim 1, it is characterised in that：Described glass fibre is alkali-free, nothing
The length of lay is fine, is used after Silane coupling agent KH550 is handled.
6. igbt chip heat conducting module according to claim 1, it is characterised in that：Described compatilizer is coupled for maleic acid
Branch polyethylene, maleic acid match somebody with somebody one kind or several of the octene copolymer of grafted ethene one with grafting Ethylene propylene copolymer, maleic acid
The mixture of kind.
7. igbt chip heat conducting module according to claim 1, it is characterised in that：Described processing aid is stable for silane
The weight of agent and organo-silicic oil ratio is 1:2 mixture, the organosilane stabilising agent are that dimethyl is double（4 one phenylaminos
Phenoxyl）Silane, dimethyl it is double 4 one "（Cai Ji 1）Amino) phenoxy group one or both of silane it is mixed
Compound, the organo-silicic oil are the third generation silicone plasties lubricant containing ultra-high molar mass organosilicon polymer.
8. the preparation method based on the igbt chip heat conducting module described in any one in claim 1-7, it is characterised in that：Bag
Material P preparation manipulation is included, material P preparation manipulation is：By described polyphenylene sulfide, ultra-high molecular weight polyethylene, aluminum oxide
Ceramic powder, heat conductive silica gel, compatilizer and processing aid are well mixed, then the melt blending extruding pelletization together with glass fibre；
Then granulation is heated to molten condition, heat-conducting silicone grease substrate will be carried（28）IGBT module be put into mould, by molten condition
Material P pour into mould, IGBT module is coated, bottom heat spreader is installed after cooling（29）, left side heat sink（11）And right side
Heat sink（12）.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510376026.0A CN105047624B (en) | 2015-07-01 | 2015-07-01 | Igbt chip heat conducting module and preparation method thereof |
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| CN201510376026.0A CN105047624B (en) | 2015-07-01 | 2015-07-01 | Igbt chip heat conducting module and preparation method thereof |
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| CN105047624B true CN105047624B (en) | 2017-11-24 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205282468U (en) * | 2015-11-30 | 2016-06-01 | 比亚迪股份有限公司 | IGBT heat dissipation module and have its IGBT module |
| CN105552049A (en) * | 2016-01-29 | 2016-05-04 | 南京银茂微电子制造有限公司 | Integrated liquid cooling heat sink device of power module and bottom plate used by power module |
| CN106590550A (en) * | 2016-12-15 | 2017-04-26 | 深圳德邦界面材料有限公司 | Heat conduction silicone grease and preparation method thereof |
| TWI693684B (en) * | 2018-11-26 | 2020-05-11 | 艾姆勒車電股份有限公司 | Igbt module with improved heat dissipation structure |
| CN112530888A (en) * | 2019-09-17 | 2021-03-19 | 珠海格力电器股份有限公司 | Power module and manufacturing method thereof |
| CN111525228B (en) * | 2020-05-18 | 2021-08-13 | Oppo广东移动通信有限公司 | Antenna module and electronic device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101933139A (en) * | 2007-12-20 | 2010-12-29 | 爱信艾达株式会社 | Semiconductor device and method for fabricating the same |
| CN103525089A (en) * | 2013-10-18 | 2014-01-22 | 株洲时代新材料科技股份有限公司 | Special packaging material for insulated gate bipolar transistor (IGBT) and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4073559B2 (en) * | 1998-10-30 | 2008-04-09 | 三菱電機株式会社 | Semiconductor device |
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2015
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101933139A (en) * | 2007-12-20 | 2010-12-29 | 爱信艾达株式会社 | Semiconductor device and method for fabricating the same |
| CN103525089A (en) * | 2013-10-18 | 2014-01-22 | 株洲时代新材料科技股份有限公司 | Special packaging material for insulated gate bipolar transistor (IGBT) and preparation method thereof |
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