CN105025802B - 具有穿透基板通孔(tsv)的电容式微加工超声换能器(cmut)器件 - Google Patents
具有穿透基板通孔(tsv)的电容式微加工超声换能器(cmut)器件 Download PDFInfo
- Publication number
- CN105025802B CN105025802B CN201480010856.5A CN201480010856A CN105025802B CN 105025802 B CN105025802 B CN 105025802B CN 201480010856 A CN201480010856 A CN 201480010856A CN 105025802 B CN105025802 B CN 105025802B
- Authority
- CN
- China
- Prior art keywords
- cmut
- substrate
- layer
- tsv
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
- H02N1/006—Electrostatic motors of the gap-closing type
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
- H02N1/006—Electrostatic motors of the gap-closing type
- H02N1/008—Laterally driven motors, e.g. of the comb-drive type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B2201/00—Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
- B06B2201/70—Specific application
- B06B2201/76—Medical, dental
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Biomedical Technology (AREA)
- Medical Informatics (AREA)
- Gynecology & Obstetrics (AREA)
- Biophysics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Pathology (AREA)
- Radiology & Medical Imaging (AREA)
- Mechanical Engineering (AREA)
- Heart & Thoracic Surgery (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Surgery (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Pressure Sensors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Micromachines (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/779,376 | 2013-02-27 | ||
| US13/779,376 US9520811B2 (en) | 2013-02-27 | 2013-02-27 | Capacitive micromachined ultrasonic transducer (CMUT) device with through-substrate via (TSV) |
| PCT/US2014/019011 WO2014134301A1 (en) | 2013-02-27 | 2014-02-27 | Capacitive micromachined ultrasonic transducer (cmut) device with through-substrate via (tsv) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105025802A CN105025802A (zh) | 2015-11-04 |
| CN105025802B true CN105025802B (zh) | 2018-01-05 |
Family
ID=51387424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480010856.5A Active CN105025802B (zh) | 2013-02-27 | 2014-02-27 | 具有穿透基板通孔(tsv)的电容式微加工超声换能器(cmut)器件 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9520811B2 (enExample) |
| JP (1) | JP6337026B2 (enExample) |
| CN (1) | CN105025802B (enExample) |
| WO (1) | WO2014134301A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9351081B2 (en) * | 2013-02-27 | 2016-05-24 | Texas Instruments Incorporated | Capacitive micromachined ultrasonic transducer (CMUT) with through-substrate via (TSV) substrate plug |
| US9520811B2 (en) * | 2013-02-27 | 2016-12-13 | Texas Instruments Incorporated | Capacitive micromachined ultrasonic transducer (CMUT) device with through-substrate via (TSV) |
| US9470710B2 (en) * | 2013-02-27 | 2016-10-18 | Texas Instruments Incorporated | Capacitive MEMS sensor devices |
| JP6221582B2 (ja) * | 2013-09-30 | 2017-11-01 | セイコーエプソン株式会社 | 超音波デバイスおよびプローブ並びに電子機器および超音波画像装置 |
| US9761509B2 (en) * | 2015-12-29 | 2017-09-12 | United Microelectronics Corp. | Semiconductor device with throgh-substrate via and method for fabrication the semiconductor device |
| EP3586093A4 (en) * | 2017-02-27 | 2021-01-06 | Butterfly Network, Inc. | CAPACITIVE MICRO-MACHINED ULTRASONIC TRANSDUCERS (CMUT), EQUIPMENT AND ASSOCIATED PROCESSES |
| US10662055B2 (en) | 2017-04-27 | 2020-05-26 | Seiko Epson Corporation | MEMS element, sealing structure, electronic device, electronic apparatus, and vehicle |
| KR102450580B1 (ko) | 2017-12-22 | 2022-10-07 | 삼성전자주식회사 | 금속 배선 하부의 절연층 구조를 갖는 반도체 장치 |
| WO2019173694A1 (en) * | 2018-03-09 | 2019-09-12 | Butterfly Network, Inc. | Ultrasound transducer devices and methods for fabricating ultrasound transducer devices |
| WO2020100112A1 (en) * | 2018-11-16 | 2020-05-22 | Vermon S.A. | Capacitive micromachined ultrasonic transducer and method of manufacturing the same |
| KR102244601B1 (ko) * | 2019-05-29 | 2021-04-26 | 인하대학교 산학협력단 | 정전용량형 미세가공 초음파 트랜스듀서 및 그 제조방법 |
| WO2021019296A1 (en) * | 2019-07-26 | 2021-02-04 | Vermon Sa | Cmut transducer and method for manufacturing |
| EP4021649A1 (en) * | 2019-08-30 | 2022-07-06 | Vermon S.A. | Cmut transducer |
| WO2021142554A1 (en) * | 2020-01-17 | 2021-07-22 | The University Of British Columbia | Flexible capacitive micromachined ultrasonic transducer arrays |
| US11440051B2 (en) | 2020-02-26 | 2022-09-13 | General Electric Company | Capacitive micromachined ultrasonic transducer (CMUT) devices and methods of manufacturing |
| US11587865B2 (en) * | 2020-06-15 | 2023-02-21 | Semiconductor Device Including Capacitor And Resistor | Semiconductor device including capacitor and resistor |
| CN111889341B (zh) * | 2020-07-30 | 2021-07-13 | 中国兵器工业集团第二一四研究所苏州研发中心 | 一种超薄柔性硅基电容式微机械超声波换能器及加工方法 |
| EP4059440A1 (en) | 2021-03-15 | 2022-09-21 | Pulsify Medical | Ultrasound system |
| WO2025117580A1 (en) * | 2023-11-27 | 2025-06-05 | The Penn State Research Foundation | Photoacoustic transducer array and methods of making the same |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6312581B1 (en) * | 1999-11-30 | 2001-11-06 | Agere Systems Optoelectronics Guardian Corp. | Process for fabricating an optical device |
| TWI221343B (en) | 2003-10-21 | 2004-09-21 | Advanced Semiconductor Eng | Wafer structure for preventing contamination of bond pads during SMT process and process for the same |
| JP4347885B2 (ja) * | 2004-06-03 | 2009-10-21 | オリンパス株式会社 | 静電容量型超音波振動子の製造方法、当該製造方法によって製造された静電容量型超音波振動子を備えた超音波内視鏡装置、静電容量型超音波プローブおよび静電容量型超音波振動子 |
| WO2005120360A1 (ja) * | 2004-06-10 | 2005-12-22 | Olympus Corporation | 静電容量型超音波プローブ装置 |
| US7405637B1 (en) * | 2004-06-29 | 2008-07-29 | Hrl Laboratories, Llc | Miniature tunable filter having an electrostatically adjustable membrane |
| WO2006046471A1 (ja) * | 2004-10-27 | 2006-05-04 | Olympus Corporation | 静電容量型超音波振動子及びその体腔内超音波診断システム |
| CA2607918A1 (en) * | 2005-05-18 | 2006-11-23 | Kolo Technologies, Inc. | Micro-electro-mechanical transducers |
| EP1883956A4 (en) * | 2005-05-18 | 2011-03-23 | Kolo Technologies Inc | BY-THE-WAFER CONNECTION |
| US8007167B2 (en) | 2005-09-30 | 2011-08-30 | Silicon Laboratories Inc. | Integrated electronic sensor |
| DE102005058977A1 (de) | 2005-12-09 | 2007-06-14 | Atmel Germany Gmbh | Transpondereinrichtung mit Mega-Pads |
| US7741686B2 (en) * | 2006-07-20 | 2010-06-22 | The Board Of Trustees Of The Leland Stanford Junior University | Trench isolated capacitive micromachined ultrasonic transducer arrays with a supporting frame |
| JP4891182B2 (ja) * | 2007-08-28 | 2012-03-07 | オリンパスメディカルシステムズ株式会社 | 超音波トランスデューサ、超音波診断装置及び超音波顕微鏡 |
| US7843022B2 (en) * | 2007-10-18 | 2010-11-30 | The Board Of Trustees Of The Leland Stanford Junior University | High-temperature electrostatic transducers and fabrication method |
| US7799678B2 (en) * | 2008-01-30 | 2010-09-21 | Freescale Semiconductor, Inc. | Method for forming a through silicon via layout |
| US7943514B2 (en) * | 2009-09-03 | 2011-05-17 | Texas Instruments Incorporated | Integrated circuits having TSVs including metal gettering dielectric liners |
| US8563345B2 (en) * | 2009-10-02 | 2013-10-22 | National Semiconductor Corporated | Integration of structurally-stable isolated capacitive micromachined ultrasonic transducer (CMUT) array cells and array elements |
| US8143704B2 (en) * | 2009-10-02 | 2012-03-27 | Texas Instruments Incorporated | Electronic assemblies including mechanically secured protruding bonding conductor joints |
| US8324006B1 (en) * | 2009-10-28 | 2012-12-04 | National Semiconductor Corporation | Method of forming a capacitive micromachined ultrasonic transducer (CMUT) |
| US7969013B2 (en) * | 2009-10-22 | 2011-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through silicon via with dummy structure and method for forming the same |
| JP5404335B2 (ja) * | 2009-11-17 | 2014-01-29 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
| DE102010045649A1 (de) | 2010-09-17 | 2012-03-22 | Texas Instruments Deutschland Gmbh | Elektronische Vorrichtung und Verfahren zum direkten Montieren passiver Komponenten |
| US20140187957A1 (en) * | 2012-12-31 | 2014-07-03 | Volcano Corporation | Ultrasonic Transducer Electrode Assembly |
| US9351081B2 (en) * | 2013-02-27 | 2016-05-24 | Texas Instruments Incorporated | Capacitive micromachined ultrasonic transducer (CMUT) with through-substrate via (TSV) substrate plug |
| US9520811B2 (en) * | 2013-02-27 | 2016-12-13 | Texas Instruments Incorporated | Capacitive micromachined ultrasonic transducer (CMUT) device with through-substrate via (TSV) |
| KR102176584B1 (ko) * | 2013-11-20 | 2020-11-09 | 삼성전자주식회사 | 정전용량 미세가공 초음파 변환기 및 그 제조방법 |
-
2013
- 2013-02-27 US US13/779,376 patent/US9520811B2/en active Active
-
2014
- 2014-02-27 WO PCT/US2014/019011 patent/WO2014134301A1/en not_active Ceased
- 2014-02-27 JP JP2015560307A patent/JP6337026B2/ja active Active
- 2014-02-27 CN CN201480010856.5A patent/CN105025802B/zh active Active
-
2016
- 2016-11-08 US US15/345,741 patent/US10335827B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6337026B2 (ja) | 2018-06-06 |
| CN105025802A (zh) | 2015-11-04 |
| WO2014134301A1 (en) | 2014-09-04 |
| JP2016511607A (ja) | 2016-04-14 |
| US20170050217A1 (en) | 2017-02-23 |
| US10335827B2 (en) | 2019-07-02 |
| US9520811B2 (en) | 2016-12-13 |
| US20140239769A1 (en) | 2014-08-28 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |