CN105006253B - A kind of flash memory chip data retention inspection method and system - Google Patents
A kind of flash memory chip data retention inspection method and system Download PDFInfo
- Publication number
- CN105006253B CN105006253B CN201510490959.2A CN201510490959A CN105006253B CN 105006253 B CN105006253 B CN 105006253B CN 201510490959 A CN201510490959 A CN 201510490959A CN 105006253 B CN105006253 B CN 105006253B
- Authority
- CN
- China
- Prior art keywords
- data
- bad sector
- sector
- total number
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
A kind of flash memory chip data retention inspection method of present invention offer and system, it can be to checking that the bad sector come is marked for the first time, and by the label total quantity for checking the bad sector total quantity come for the second time and wherein also having compared with the bad sector total quantity that first time checks, so as to quickly determine whether flash chip is checked by data retention, avoid the trouble for checking that the bad sector address come compares one by one twice in the prior art, the thus flash memory chip data retention inspection method of the present invention, it is relatively easy, quickly, effectively, more sectors suitable for flash chip are repaired and read-write management.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of flash memory chip data retention inspection method and
System.
Background technology
Currently, with the continuous development of electronic technology, embedded system is more and more in control class, consumer, communication
The electronic products extensive use such as class, embedded technology are also increasingly combined closely with people’s lives.Flush memory device (Flash
Memory) it is a kind of non-volatile solid state memory, it is complete nonvolatile memory, can provide reliable data power down and protect
Shield；And it can be written online, and access speed is fast, is a kind of high reliability, highdensity solid storage device, currently, respectively
Kind Flash has been increasingly becoming most important storage device in embedded system.Meanwhile flush memory device also has its inherent limitations.It is first
First, the flash cell programmed has to pass through erasing and could be programmed again, and flash cell only has limited service life；
That is, flash cell can only carry out the erasing operation of finite number of time before failure.For example, the typical maximum erasing of nand flash memory cell
Number is 1,000,000 times.The characteristics of accordingly, due to " erasing before write-in ", flash memory access speed is slower, and erasing repeatedly
Operation will defective flash memory unit.Thereby it is ensured that data access procedure can keep its reliability (i.e. data retention,
Data Retention), it is the considerable ring of current storage device dealer.Its most important consideration is data in access
In the process, it is possible to because itself or external factor of flush memory device cause the integrality of data impacted.
In order to reduce the probability for being possible to occur data retention fault, the storage unit of current flush memory device to the greatest extent
Array is generally made of typical basic structure, that is, is divided into " sector (Sector) " or " page (page) ", and by " sector " or
" page " composition " block (block) ".One sector includes that the data segment of X byte adds the dead section of Y byte
(Spare), in general, a sector constitutes a data by 512 bytes (small block format) or 2048 bytes (big block format)
Section, constitutes a dead section, for storing bug patch code (Error Correction by 16 bytes or 64 bytes
Code；ECC coding), ECC is encoded so that flush memory device not only has the function of detecing mistake, and can repair the data money of mistake
Material.Part multilevel-cell (Multi-Level-Cell, MLC) flash memory includes 2048 bytes and the dead section more than 64 bytes,
One sector may also have 4096 bytes (or more) data byte.One block is made of one group of sector, such as：4,16,32,64 or
More sectors, number of sectors determine as the case may be.If wherein some sector includes one or more invalid storage units
(that is, during programming or erasing operation, one or more storage units cannot achieve set minimum operation state), then it is assumed that
This is " bad " sector.
Embedded flash memory device is the memory that embedded chip carries (embedded).Such as identification card chip (SIM card
Chip), often carry embedded flash in the embedded chips such as singlechip chip (MCU chip) or system-on-a-chip (SOC)
Memory.It after the completion of embedded chip is through manufacture, needs to check its data retention property before manufacture, if a block
Whole storage units all functions it is intact and have enough reliabilitys, then it is assumed that this is " good " block, without into row block interior wing
Area is repaired, conversely, this block is bad block, needs to carry out data reparation to the bad sector using the ECC codings of each bad sector, with
Promote the reliability and stability of product.
The inspection of data retention (data retention check, DR inspection) method of conventional embedded flash memory chip
General process is as follows：
Data are written：In blocks, each memory block of embedded flash memory chip is scanned, is deposited toward each
Data are written in storage block, and high-temperature pressurizing baking is carried out to flash memory module, to simulate flush memory device through using after a period of time
Situation afterwards；
Check (CP1) for the first time：In blocks, each memory block of embedded flash memory chip is scanned, just
It is secondary to read each storage data in the block, and the data read in each piece are compared with the data being written before, it finds out
Each bad sector in the block；
Second of inspection (CP2)：In blocks, each block of embedded flash memory chip is scanned, is read again
Each data in the block is taken, the data read again are compared with the data of said write, finds out each bad fan in the block
Area, and each bad sector that each piece is found out in CP2 is compared with each bad sector found out in CP1 into row address one by one
(as shown in Figure 1, for example by the address of the bad sector Sector 1 ' of CP2 with 1~SectorN's of each bad sector Sector of CP1
Whether address compares one by one, to confirm Sector 1 ' very for bad sector), it does quantity and specific sevtor address compares, if final hair
Bad sector address that existing CP1 and CP2 is found out is not exactly the same (to please refer to Fig.2 A, bad sector address and the CP1 which is CP2
Bad sector address the case where being intersection, CP2 is found out at this time bad sector quantity likely to be less than, be equal to or more than CP1), then
Judgement embedded flash memory chip is not checked by DR；If CP1 with the quantity of the CP2 bad sector found out is identical with address (asks
With reference to figure 2B), then judge that embedded flash memory chip is checked by DR, all bad sector found out are genuine bad sector, subsequently
These bad sector can be handled (such as reparation)；If it was found that the bad sector that CP2 is found out is included in the bad sector that CP1 is found out
(C is please referred to Fig.2 in range), then judges that embedded flash memory chip is checked by DR, and all bad sector that CP2 is found out are genuine
Bad sector can subsequently handle these bad sector (such as reparation) and then judge that embedded flash memory chip is not protected by data
The property stayed inspection.
In the above method, due to carry out ground by each bad sector that CP2 is found out and all bad sector that CP1 is found out successively
Location compares, so when bad sector quantity is more than 4, this poll comparison process becomes quite cumbersome, influences DR and checks efficiency.
Invention content
The purpose of the present invention is to provide a kind of flash memory chip data retention inspection method and systems, can be simple, fast
Speed effectively implements data retention inspection to flash chip.
To solve the above problems, the present invention proposes a kind of flash memory chip data retention inspection method, including：
Data are written：Data are written into each memory block of flash chip, data are stored to each memory block of composition
In sector；
It checks for the first time：All storage data in the block are read for the first time, and it is compared with the data of said write,
Each storage bad sector in the block is found out, and is each bad sector setting flag；
Simulate aging：Simulate situation of the flash chip after use after a period of time；
Second of inspection：Each storage data in the block are read again, and the data of itself and said write are compared again,
Each storage bad sector in the block is found out again, and is checked for relatively second and checked found out bad sector total number for the first time
Judge the flash memory core when checking that the bad sector total number found out and label total number are consistent twice with label total number
Piece is checked by data retention.
Further, it is each bad by the way that the data that can distinguish bad sector and normal sector are written into bad sector
Sector setting flag.
Further, the label of each bad sector is identical, is 1 bit 0；The data of each normal sector are identical,
It is 1 bit 1.
Further, it checks and checks found out bad sector total number and label total number for the first time for relatively second
When, including：
If checking twice, the bad sector total number found out is equal, but the total number of the label checked twice is inconsistent,
Then memory block is not checked by data retention；
If checking twice, the bad sector total number found out is equal, and the total number of the label checked twice is consistent, then
Memory block is checked by data retention；
If checking twice, the bad sector total number found out is inconsistent, and memory block is not checked by data retention.
Further, the simulation Aging Step is realized by carrying out high-temperature pressurizing baking to flash chip.
Further, it is realized using memory built in self test of sram mode.
Further, after flash chip is checked by data retention, output checks all bad fans found out for the first time
The address in area generates bad block table, to carry out sector reparation and read-write management to flash chip.
The present invention also provides a kind of flash memory chip data retentions to check system, including Data write. module, the first inspection
Module, simulation ageing module, second check module, wherein
The Data write. module, connection carry out the flash chip of data retention inspections, and to connection flash chip
Data are written in each memory block, the data of write-in are stored into the sector for constituting each memory block；
Described first checks module connection Data write. module and the flash chip, and is carried out for the first time to flash chip
It checks, including sequentially connected first reading unit, the first comparing unit, bad sector marking unit and the first statistic unit,
First reading unit reads each storage data in the block of flash chip after the completion of Data write. module write-in, and first compares
The data that first reading unit is read are compared by unit with the data that Data write. module is written, and it is inconsistent to find out data
Bad sector, bad sector marking unit are each bad sector setting flag that the first comparing unit is found out, the first statistic unit statistics
The label total number for bad sector total number and bad sector the marking unit setting that first comparing unit is found out；
The simulation ageing module connection first checks module and the flash chip, and the complete institute of resume module is checked first
After stating flash chip, situation of the flash chip after use after a period of time is simulated；
Described second checks that module connection Data write. module, first check module, simulation ageing module and the flash memory
Chip, and second is carried out to flash chip and is checked, including sequentially connected second reading unit, the second comparing unit, second
Statistic unit and result judging unit, the second reading unit read flash chip after the completion of simulating ageing module simulated operation
Each storage data in the block, data that the second comparing unit reads the second reading unit and Data write. module write-in
Data are compared, and find out the label in data inconsistent bad sector and bad sector, the second ratio of the second statistic unit statistics
The bad sector total number and label total number found out compared with unit, as a result judging unit is single by the second statistic unit and the first statistics
The bad sector total number and label total number of member statistics are compared, and judge whether the flash chip is retained by data
Property inspection.
Further, the Data write. module writes 1 bit 1, the bad sector marking unit into each sector
Label for the setting of each bad sector is identical, is 1 bit 0.
Further, the result judging unit is after judging that the flash chip is checked by data retention, output
The address for all bad sector that the first inspection module is found out generates bad block table.
Compared with prior art, flash memory chip data retention inspection method and system of the invention check first time
Bad sector out is marked, and by check for the second time come bad sector total quantity and wherein also have label total quantity and
The bad sector total quantity checked for the first time compares, so as to quickly determine whether flash chip is examined by data retention
It looks into, avoids the trouble for checking that the bad sector address come compares one by one twice in the prior art, thus the flash memory core of the present invention
Sheet data retention inspection method and system, relatively easy, quick, effective, the more sectors for being suitable for flash chip are repaired and are read
Write management.
Description of the drawings
The schematic diagram of CP1 and CP2 results contrasts when Fig. 1 is flash memory chip data retention inspection in the prior art；
Fig. 2A to 2C is judgment basis schematic diagram when whether flash chip is checked by data retention in the prior art；
Fig. 3 is the flow chart of the flash memory chip data retention inspection method of the specific embodiment of the invention；
Fig. 4 A to 4B be the specific embodiment of the invention flash chip whether the basis for estimation checked by data retention
Schematic diagram
Fig. 5 is that the flash memory chip data retention of the specific embodiment of the invention checks system block diagram.
Specific implementation mode
To make the purpose of the present invention, feature be clearer and more comprehensible, the specific implementation mode of the present invention is made below in conjunction with the accompanying drawings
Further instruction, however, the present invention can be realized with different forms, should not be to be confined to the embodiment described.
The flash memory chip data retention inspection method and system of the present invention, to checking that the bad sector come carries out for the first time
Label, and the label total quantity for checking next bad sector total quantity for the second time and wherein also having badly is fanned with what is checked for the first time
Area's total quantity compares, so as to quickly determine whether flash chip is checked by data retention.The technical side of the present invention
Case can realize selftest by memory built in self test of sram technology (Memory Built-in Self Test, MBIST),
To reduce the demand to automatic test equipment.Therefore the present invention flash memory chip data retention inspection method as shown in figure 3,
When checking twice, built-in self-test system reads the entire storage array of flash chip automatically, and it is logical to export each sector
The information crossed/do not checked by (pass/fail) DR, while the bad sector total number that statistics is found out when checking first time is simultaneously
Each bad sector is marked, when checking for second, the total number of statistics bad sector and label total number, realize and examine twice
Come to an end fruit bad sector total number and label total number compare, thus judge whether flash chip is checked by DR.
With reference to Fig. 3 and Fig. 4 A to 4B to the flash memory chip data retention inspection method of built-in self-test mode of the present invention
It is described in detail.
Referring to FIG. 3, the present invention proposes a kind of flash memory chip data retention inspection method, including：
Data are written in S31：In blocks, data are written into each memory block of flash chip, data are stored to structure
In sector at each memory block；
S32 checks (CP1) for the first time：Read each storage data in the block for the first time, and by the data of itself and said write
It is compared, finds out bad sector all in flash chip, and be each bad sector setting flag；
S33 simulates aging：High-temperature pressurizing baking is carried out to flash chip, simulates flash chip through making after a period of time
Situation (such as simulating the state that flash chip reaches its 10% service life) after；
S34, second of inspection (CP2)：Read again each storage data in the block, and by the data of itself and said write
It compares again, finds out each storage bad sector in the block in flash chip again, that is, find out bad sector all in flash chip,
And compare CP1 and CP2 and check the bad sector total number found out and label total number twice, when checking that the bad sector found out is total twice
When number and consistent label total number, judge that the flash chip is checked by data retention, it subsequently can be according to data
The result of retention inspection carries out sector reparation to the flash chip.
The flash memory chip data retention inspection method of the present embodiment, substantially in step S31 in blocks, according to
Memory block puts in order (i.e. sequence of addresses), and data are sequentially written in each memory block of flash chip, thus to flash memory core
Data are written in all sectors of piece, in step S32 and S34 in blocks, according to (the i.e. address that puts in order of memory block
Sequentially), each storage data in the block of flash chip are successively read, to read flash chip all sectors data,
And data are read out one by one to each sector and the comparison of data is written, it finds out all bad sector and (is written and reads
The inconsistent sector of data), for example, (being counted to each memory block write-in 1, normal sector in the write-in data step of S31
According to the good sector of retention, good sector) 1 bit 1 will be stored, bad sector (is caused mainly due to manufacturing process defect
The sector of failure) in data write error miss the data of (such as becoming 0) or bad sector and can not subsequently be read, step at this time
In S32 checking steps, first with block unit, the data in all sectors are had read, then the data by reading each sector
Compare with the data of each sector write-in, it can be found that the data of good sector can be verified as correctly, the data of bad sector can quilt
It is verified as mistake, the data even read from certain sector are inconsistent with the data that the sector is written before, then judge the sector
For bad sector, and in step s 32, checked for the first time no matter which kind of situation is the storage data of the bad sector read be, it is unified will
Each bad sector carries out same tag, i.e., the data of 1 bit 0 is written in bad sector, at this time the sector in flash chip
Only two class data, by find out data not be 1 sector；After the simulation Aging Step of S33, some normal sectors have can
Its service life can be reached and failing becomes bad sector, the bad sector quantity found out in the CP2 checking steps of S34 may wait
In or more than the bad sector quantity found out in the CP1 checking steps of step S32.Therefore it is examined twice using step S32 and step S34
The difference of the bad sector total number and label total number that find out, can quickly judge whether the flash chip passes through data
Retention inspection, specifically：
If checking twice, the bad sector total number found out is equal, but the total number of the label checked twice is inconsistent,
Then flash chip does not pass through data retention inspection (not shown)；
If checking twice, the bad sector total number found out is equal, and the total number of the label checked twice is equal, then
Flash chip passes through data retention inspection (please referring to Fig.4 A)；
If checking twice, the bad sector total number found out is inconsistent, and flash chip (is not asked by data retention inspection
With reference to figure 4B).
When judge flash chip checked by DR after, built-in self-test system can export all bad sector address or
Bad block table is generated, to carry out sector reparation and read-write management to flash chip.
The flash chip DR inspection methods of the present embodiment, checking will lack in flash chip mainly due to manufacturing process for the first time
All bad sector for falling into and failing are marked, second of sum for checking the total quantity and label that can rely solely on bad sector
It measures the result to check first time to verify, quickly judges whether flash chip can be checked by data retention, keep away
The cumbersome logic that the sevtor address using inspection result twice compares to be verified one by one in the prior art is exempted from, therefore has calculated
Amount substantially reduces, and compares rate and greatly improves, and can save the testing time of flash chip.
Referring to FIG. 5, the present invention also provides a kind of flash memory chip data retention inspections based on built-in self-test formula mode
System, including Data write. module 51, first check that module 52, simulation ageing module 53, second check module 54, data write-in
Module 51, first checks that module 52 and second checks that module 54 can be embedded in the memory test for flash chip functional test
It is realized in machine, simulation ageing module 53 can be based on existing including heater, the isostructural memory burn-in test of cooler
Device is realized, wherein
The Data write. module 51, connection carry out data retention inspection flash chip 10, and to connection flash memory core
Data are written in each memory block of piece 10, the data of write-in are stored into the sector for constituting each memory block；
Described first checks that module 52 connects Data write. module 51 and the flash chip 10, including sequentially connected the
One reading unit 521, the first comparing unit 522, bad sector marking unit 523 and the first statistic unit 524, first reads list
The first each storage data in the block for reading flash chip 10 after the completion of the write-in of Data write. module 51 of member 521, the first ratio
The data that first reading unit 521 is read are compared with the data that Data write. module 51 is written compared with unit 522, find out number
According to inconsistent bad sector, bad sector marking unit 523 is each bad sector setting flag that the first comparing unit 522 is found out,
First statistic unit 524 counts the bad sector total number that the first comparing unit 522 is found out and bad sector marking unit 523 is arranged
Label total number；
The connection of simulation ageing module 53 first checks module 52 and the flash chip 10, and module 52 is checked first
After having handled the flash chip, flash chip 10 is placed in high-temperature pressurizing curing environment, simulates the flash chip warp
Situation after use after a period of time；
Described second checks that module 54 connects Data write. module 51, first and checks module 52,53 and of simulation ageing module
The flash chip 10, including sequentially connected second reading unit 541, the second comparing unit 542, the second statistic unit 543
And result judging unit 544, the second reading unit 541 read again flash memory after the completion of simulating 53 simulated operation of ageing module
Each storage data in the block of chip 10, the second comparing unit 542 write the data that the second reading unit 541 is read with data
The data for entering the write-in of module 51 are compared, and find out the label in data inconsistent bad sector and bad sector, the second statistics
Unit 543 counts the bad sector total number that the second comparing unit 542 is found out and label total number, and as a result judging unit 544 will
The bad sector total number and label total number of second statistic unit 543 and the first statistic unit 524 statistics are compared, and are judged
Go out whether the flash chip is checked by data retention.
Wherein, the Data write. module 51, it is in blocks, suitable according to memory block arrangement/address of flash chip 10
Sequence writes 1 bit 1 into each sector, and the bad sector marking unit is that the label of each bad sector setting is identical, is
1 bit 0；First reading unit 521 and the second reading unit 541, in blocks, according to the memory block of flash chip 10
Arrangement/sequence of addresses, the data being successively read into each sector；First comparing unit 522 and the second comparing unit 542 can be with
Data comparison is carried out in blocks, can also obtain the storage battle array of flash chip reading as unit of entire flash chip
After the overall data of row, the comparison of entire storage array data is carried out.
Further, the result judging unit 544 is after judging that the flash chip 10 is checked by data retention,
It exports the address for all bad sector that the first inspection module 52 is found out or generates bad block table.
The flash memory chip data retention of the present invention checks system, can be realized based on memory built in self test of sram mode,
First checks that module carries out first time inspection to flash chip, will fail mainly due to manufacturing process defect in flash chip
All bad sector are found out and are marked automatically, second checks that module carries out second and checks, and can rely solely on and find out
The total quantity of bad sector and the total quantity of label are verified automatically come the result checked first time, quickly judge flash memory core
Whether piece can be checked by data retention, avoided and compared one by one using the sevtor address of inspection result twice in the prior art
Come the cumbersome logic verified, therefore calculation amount substantially reduces, and compares rate and greatly improves, and can save the survey of flash chip
Try the time.
Obviously, those skilled in the art can carry out invention spirit of the various modification and variations without departing from the present invention
And range.If in this way, these modifications and changes of the present invention belong to the claims in the present invention and its equivalent technologies range it
Interior, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of flash memory chip data retention inspection method, which is characterized in that including：
Data are written：Data are written into each memory block of flash chip, data are stored to the sector for constituting each memory block
In；
It checks for the first time：All storage data in the block are read for the first time, and it is compared with the data of said write, are found out
Each storage bad sector in the block, and be each bad sector setting flag, it counts in bad sector total number and bad sector and marks always
Number；
Simulate aging：Simulate situation of the flash chip after use after a period of time；
Second of inspection：Each storage data in the block are read again, and the data of itself and said write are compared again, again
Each storage bad sector in the block is found out, counts and marks total number in bad sector total number and bad sector, and relatively second is examined
Look into and check found out bad sector total number and label total number for the first time, when check twice the bad sector total number found out with
When marking total number consistent, judge that the flash chip is checked by data retention.
2. flash memory chip data retention inspection method as described in claim 1, which is characterized in that by being write into bad sector
The data that bad sector and normal sector distinguish can be carried out for each bad sector setting flag by entering.
3. flash memory chip data retention inspection method as claimed in claim 2, which is characterized in that the label of each bad sector
It is identical, it is 1 bit 0；The data of each normal sector are identical, are 1 bit 1.
4. flash memory chip data retention inspection method as described in claim 1, which is characterized in that relatively second check with
When checking found out bad sector total number and label total number for the first time, including：
If checking twice, the bad sector total number found out is equal, but the total number of the label checked twice is inconsistent, then deposits
Storage block is not checked by data retention；
If checking twice, the bad sector total number found out is equal, and the total number of the label checked twice is consistent, then stores
Block is checked by data retention；
If checking twice, the bad sector total number found out is inconsistent, and memory block is not checked by data retention.
5. flash memory chip data retention inspection method as described in claim 1, which is characterized in that by flash chip into
Row high-temperature pressurizing toasts to realize the simulation Aging Step.
6. flash memory chip data retention inspection method as described in claim 1, which is characterized in that certainly using memory built
Test mode is realized.
7. flash memory chip data retention inspection method as claimed in claim 6, which is characterized in that when flash chip passes through number
After being checked according to retention, output checks the address for all bad sector found out or generates bad block table for the first time, with to flash memory core
Piece carries out sector reparation and read-write management.
8. a kind of flash memory chip data retention checks system, which is characterized in that check mould including Data write. module, first
Block, simulation ageing module, second check module, wherein
The Data write. module, connection carry out data retention inspection flash chip, and to connection flash chip it is each
Data are written in memory block, the data of write-in are stored into the sector for constituting each memory block；
Described first checks module connection Data write. module and the flash chip, and carries out first time inspection to flash chip
It looks into, including sequentially connected first reading unit, the first comparing unit, bad sector marking unit and the first statistic unit, the
One reading unit reads each storage data in the block of flash chip after the completion of Data write. module write-in, and first is relatively more single
The data that first reading unit is read are compared by member with the data that Data write. module is written, and find out inconsistent bad of data
Sector, bad sector marking unit are each bad sector setting flag for finding out of the first comparing unit, the first statistic unit statistics the
The label total number for bad sector total number and bad sector the marking unit setting that one comparing unit is found out；
The simulation ageing module connection first checks module and the flash chip, and the complete sudden strain of a muscle of resume module is checked first
After depositing chip, situation of the flash chip after use after a period of time is simulated；
Described second checks that module connection Data write. module, first check module, simulation ageing module and the flash chip,
And second is carried out to flash chip and is checked, including sequentially connected second reading unit, the second comparing unit, the second statistics are single
Member and result judging unit, the second reading unit read each of flash chip after the completion of simulating ageing module simulated operation
Store data in the block, the data of the data that the second comparing unit reads the second reading unit and Data write. module write-in into
Row compares, and finds out the label in data inconsistent bad sector and bad sector, and the second statistic unit counts the second comparing unit
The bad sector total number found out and label total number, as a result judging unit the second statistic unit and the first statistic unit are counted
Bad sector total number and label total number be compared, judge whether the flash chip is examined by data retention
It looks into, if bad sector total number and label total number that two statistic units are found out are consistent, the flash chip passes through data
Retention inspection, otherwise the flash chip do not checked by data retention.
9. flash memory chip data retention as claimed in claim 8 checks system, which is characterized in that the Data write. module
1 bit 1 is write into each sector, the bad sector marking unit is that the label of each bad sector setting is identical, is 1
Bit 0.
10. flash memory chip data retention as claimed in claim 8 checks system, which is characterized in that the result judges single
For member after judging that the flash chip is checked by data retention, output described first checks all bad sector that module is found out
Address or generate bad block table.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510490959.2A CN105006253B (en) | 2015-08-11 | 2015-08-11 | A kind of flash memory chip data retention inspection method and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510490959.2A CN105006253B (en) | 2015-08-11 | 2015-08-11 | A kind of flash memory chip data retention inspection method and system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105006253A CN105006253A (en) | 2015-10-28 |
| CN105006253B true CN105006253B (en) | 2018-10-16 |
Family
ID=54378890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510490959.2A Active CN105006253B (en) | 2015-08-11 | 2015-08-11 | A kind of flash memory chip data retention inspection method and system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105006253B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108242252B (en) * | 2016-12-27 | 2023-10-10 | 兆易创新科技集团股份有限公司 | Test sample of NAND flash memory chip |
| CN106951297B (en) * | 2017-04-06 | 2020-07-28 | 惠州佰维存储科技有限公司 | Method and system for producing embedded multimedia card |
| CN108133732B (en) * | 2017-12-20 | 2021-05-25 | 北京兆易创新科技股份有限公司 | Performance test method, device and equipment of flash memory chip and storage medium |
| CN109545265B (en) * | 2018-11-13 | 2020-07-07 | 深圳忆联信息系统有限公司 | Method and system for discovering weak block in real time by solid state disk device |
| CN109979518B (en) * | 2019-03-07 | 2021-04-20 | 深圳警翼智能科技股份有限公司 | Bad area identification method and system for storage medium of law enforcement recorder |
| CN112151106B (en) * | 2020-09-09 | 2023-07-11 | 深圳佰维存储科技股份有限公司 | SSD aging test method and device, storage medium and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6477672B1 (en) * | 1998-09-21 | 2002-11-05 | Advantest Corporation | Memory testing apparatus |
| CN101826368A (en) * | 2009-04-08 | 2010-09-08 | 深圳市朗科科技股份有限公司 | Data scanning method and scanning device |
| CN102420017A (en) * | 2011-09-28 | 2012-04-18 | 上海宏力半导体制造有限公司 | Method of detecting memory ability of memory |
| CN103366831A (en) * | 2013-07-25 | 2013-10-23 | 上海宏力半导体制造有限公司 | Detection method for memory |
-
2015
- 2015-08-11 CN CN201510490959.2A patent/CN105006253B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6477672B1 (en) * | 1998-09-21 | 2002-11-05 | Advantest Corporation | Memory testing apparatus |
| CN101826368A (en) * | 2009-04-08 | 2010-09-08 | 深圳市朗科科技股份有限公司 | Data scanning method and scanning device |
| CN102420017A (en) * | 2011-09-28 | 2012-04-18 | 上海宏力半导体制造有限公司 | Method of detecting memory ability of memory |
| CN103366831A (en) * | 2013-07-25 | 2013-10-23 | 上海宏力半导体制造有限公司 | Detection method for memory |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105006253A (en) | 2015-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105006253B (en) | A kind of flash memory chip data retention inspection method and system | |
| KR101498009B1 (en) | Defective block isolation in a non-volatile memory system | |
| JP3888631B2 (en) | Semiconductor memory, semiconductor memory inspection method, and manufacturing method | |
| JP5442789B2 (en) | Method, system, and computer readable code for testing flash memory | |
| US5895443A (en) | Testable non-volatile memory device | |
| US8953398B2 (en) | Block level grading for reliability and yield improvement | |
| US11221933B2 (en) | Holdup self-tests for power loss operations on memory systems | |
| US10242751B2 (en) | Method and apparatus for providing preloaded non-volatile memory content | |
| CN101529518B (en) | Method, system and computer-readable code for testing of flash memory | |
| CN106526454A (en) | ATE-based method for testing FPGA configuration chip | |
| CN107632778B (en) | Nand Flash scanning detection method and system | |
| CN108345752B (en) | Method for evaluating life characteristic of wafer-level nonvolatile memory | |
| CN105551528A (en) | Testing apparatus and method of high-speed large-capacity multi-chip Flash module based on ATE | |
| US20040221210A1 (en) | Method and apparatus for masking known fails during memory tests readouts | |
| CN112233718B (en) | Fault location analysis method and device for storage unit, storage medium and terminal | |
| CN101763902A (en) | Method and device thereof for measuring storage device | |
| CN112530508B (en) | NAND FLASH memory parallel test and bad block write-back method | |
| CN115602242B (en) | Storage device and test method thereof | |
| CN109215724A (en) | The method and device of memory automatic detection and rehabilitation | |
| CN104575614A (en) | Invalid screening method of memory units | |
| CN110444244A (en) | Store the test device of equipment read error error correcting capability | |
| CN109817270A (en) | A kind of test method of 8 MCU chips of embedded OTP | |
| CN112397136B (en) | Parameter testing method and device for semiconductor memory testing software | |
| CN108573735A (en) | A kind of the block restorative procedure and device of NAND-FLASH | |
| US8923083B2 (en) | Method of identifying damaged bitline address in non-volatile |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |