CN104988465B - Magnetic control sputtering device anode component - Google Patents
Magnetic control sputtering device anode component Download PDFInfo
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- CN104988465B CN104988465B CN201510373209.7A CN201510373209A CN104988465B CN 104988465 B CN104988465 B CN 104988465B CN 201510373209 A CN201510373209 A CN 201510373209A CN 104988465 B CN104988465 B CN 104988465B
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Abstract
The invention discloses a kind of magnetic control sputtering device anode component, including：Anode module, power supply link block, first to fourth insulation module, water cooling module, and the first to the second block module；The anode module is rectangular configuration, and center is provided with opening；The power supply link block is frame-shaped construction, connects the edge of the anode module；First insulation module is arranged at the opening of the anode module, and module is blocked in connection described first；Second insulation module is arranged on the lower section of the anode module and first insulation module；The water cooling module is arranged on the lower section of second insulation module；Second insulation module and the water cooling module centers also are provided with opening, and opening blocks module close to described first, and described first blocks Module-embedding in the gap of the water cooling module；3rd insulation module is arranged on the lower section of the water cooling module close to the side of opening；The 4th insulation module insertion described second is blocked in module, and connects the 3rd insulation module.This programme reduces maintenance cost using modular design, and can improve target utilization and into film uniformity.
Description
Technical field
The present invention relates to DC magnetron sputtering device technical field, more particularly to a kind of magnetic control sputtering device anode portion
Part.
Background technology
Sputtering method plated film is to utilize the energy between the cation produced during gas glow discharge and target material surface atom
Amount and momentum-exchange, target atom are transferred on substrate to be coated.Magnetron sputtering method is on the basis of sputtering method, to utilize
Magnetic field extends the motion path of electronics, improves the probability of electron collision gas atom, and then improve sputtering raste.Magnetron sputtering is penetrated
Point of frequency magnetron sputtering and magnetically controlled DC sputtering, the electric field arrangement that DC magnetron sputtering device need not be expensive is adapted to sputtering gold
Belong to the application scenarios of conductor or semi-conducting material, industrially largely use.The electric field arrangement of DC magnetron sputtering device
It is relatively easy, for example just electronics can just be accelerated using the electric field between parallel-plate, so that gas produces brightness
Light discharges.Parallel-plate is anode and negative electrode.
The integrated structure of magnetically controlled DC sputtering device anode component in conventional art, is provided with the center of positive plate
Opening, to the target atom by sputtering, there are the shutter of an integrally connected positive plate, shutter connection in the edge of opening
Anode supply.This integrated structural maintenance cost is high, integrally can only be arranged in magnetic control sputtering device, or one
Change ground to disassemble from device, secondly the Electric Field Distribution of this integrated structure formation can cause target utilization it is not high,
Into film uniformity it is not high the problem of.
The content of the invention
Based on this, it is necessary to provide a kind of magnetic control sputtering device anode component, maintenance is reduced using modular design
Cost, and target utilization can be improved and into film uniformity.
A kind of magnetic control sputtering device anode component, including：Anode module, power supply link block, first to fourth insulator die
Block, water cooling module, and the first to the second block module；
The anode module is rectangular configuration, and center is provided with opening；The power supply link block is frame-shaped construction, connects institute
State the edge of anode module；First insulation module is arranged at the opening of the anode module, and connects first screening
Keep off module；Second insulation module is arranged on the lower section of the anode module and first insulation module；The water cooled mo(u)ld
Block is arranged on the lower section of second insulation module；Second insulation module and the water cooling module centers also are provided with opening,
Opening blocks module close to described first, and described first blocks Module-embedding in the gap of the water cooling module；Described
Three insulation modules are arranged on the lower section of the water cooling module close to the side of opening；The 4th insulation module insertion described second
Block in module, and connect the 3rd insulation module；Described second blocks module below the 3rd insulation module.
In one embodiment, the upper surface of the anode module is designed using ripple type.
In one embodiment, the anode module, described first block module and described second and block module and connected
Supply voltage increase successively.
In one embodiment, the anode module and described first blocks first and second insulation module between module
The equivalent resistance formed is not less than 40K Ω；Described first block module and described second block between module the 3rd and
The equivalent resistance that four insulation modules are formed is not less than 40K Ω.
In one embodiment, described first block module and described second and block and be also associated with voltmeter between module.
In one embodiment, the anode module is connected with second insulation module by special nut, screw；
The special nut is hollow, internal, outside to have screw thread, adjust the screw be screwed into depth can adjust the anode module with
The spacing of second insulation module.
In one embodiment, the power supply link block is the structure for the screw hole that corner is equipped with diverse location,
The screw hole of different positions can adjust the anode module and the electricity by anode module described in nut and screw connection
Spacing between the link block of source.
In one embodiment, fixture is provided between the water cooling module and the 3rd insulation module；The fixation
The outer surface of upper of part is provided with screw thread, is fixed in the water cooling module；It is exhausted that the bottom of the fixture is embedded in the described 3rd
In edge module, the inner surface of bottom is provided with screw thread, by set screw be screwed into depth can adjust the water cooling module with it is described
Spacing between 3rd insulation module.
Above-mentioned magnetic control sputtering device anode component, including anode module, power supply link block, first to fourth insulator die
Block, water cooling module, and the first to the second block module, and maintenance cost is reduced using modular design, and relative to biography
Integrated design in system technology, module is blocked by setting two, and anode module, first is blocked module, second blocked
Insulation module is provided between module, so changes electric field form, raising target utilization and the effect into film uniformity is finally reached
Really.
Brief description of the drawings
Figure 1A be one embodiment in magnetic control sputtering device anode component side sectional view；
Figure 1B be one embodiment in magnetic control sputtering device anode component plan view；
The schematic diagram that Fig. 2 designs for the external waviness type of one embodiment Anodic module；
Fig. 3 A are the schematic diagram of parallel-plate electric field；
Fig. 3 B are the schematic diagram of Non-parallel Plate electric field；
Fig. 3 C are parallel-plate, Non-parallel Plate and the corresponding plasma profiles versus signal of structure of the embodiment of the present invention
Figure；
Fig. 4 A are the structural representation of special nut in one embodiment；
Fig. 4 B are the schematic diagram of spacing between regulation anode module and the second insulation module；
Fig. 5 A are the schematic diagram of power supply link block；
Fig. 5 B are the schematic diagram of spacing between regulation anode module and power supply link block；
Fig. 6 A are the structural representation of fixture；
Fig. 6 B are the schematic diagram of spacing between regulation water cooling module and the 3rd insulation module.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Referring to Figure 1A and Figure 1B, a kind of magnetic control sputtering device anode component (abbreviation anode component), including：Anode module
10th, power supply link block 20, first to fourth insulation module (31~34), water cooling module 40, and the first to the second block mould
Block (51,52).Wherein, anode module 10 is rectangular configuration, and center is provided with opening.Power supply link block 20 is frame-shaped construction, even
Connect the edge of anode module 10.First insulation module 31 is arranged at the opening of anode module 10, and module is blocked in connection first
51.Second insulation module 32 is arranged on the lower section of the insulation module 31 of anode module 10 and first.Water cooling module 40 is arranged on second
The lower section of insulation module 32.Second insulation module 32 and the center of water cooling module 40 also are provided with opening, and opening blocks mould close to first
Block 51, and first block module 51 and be embedded in the gap of water cooling module 40.3rd insulation module 33 is arranged on water cooling module 40
Lower section close to the side of opening.4th insulation module 34 insertion second is blocked in module 52, and the 3rd insulation module 33 of connection.
Second blocks module 52 positioned at the lower section of the 3rd insulation module 33.It should be pointed out that " top " mentioned here and " lower section ",
When magnetic control sputtering device is in running order, " top " is closer to target, and " lower section " off-target material is relatively farther.
Specifically, in Figure 1A and Figure 1B embodiments, anode module 10, power supply link block 20, first block module 51
Blocking module 52 with second can be with the conductive material of the good conductivities such as aluminium and cheap, easy processing.First to fourth insulator die
Block is from the high material of high temperature resistant, intensity.Water cooling module 40 is hollow structure, water that can be to be equipped with external magnetic control sputtering device
Cool equipment, when wherein by cooling water, can cool to anode component.
Referring to Fig. 2, in one embodiment, optionally, the upper surface of anode module is designed using ripple type, increases surface
Product, prevents that film layer from coming off caused short circuit..
In one embodiment, anode module 10, first block module 51 and 52 second and block the power supply that module is connected
Voltage increases successively.Specifically, anode module 10 can be connected to 0V voltage sources by power supply link block 20.And first blocks
Module 51 is connected to 2V voltage sources, and second, which blocks module 52, is connected to 4V voltage sources.Anode module 10 and first blocks module 51
Between the equivalent resistance that is formed of first and second insulation module be not less than 40K Ω, first, which blocks mould 51 and second, blocks mould
The equivalent resistance that the 3rd and the 4th insulation module between block 52 is formed is not less than 40K Ω, and module 51 and the are blocked first
Two block and are also associated with voltmeter between module 52, for detecting first and second block between module whether have short circuit, if having
Short circuit occurs, and first, which blocks module and second, blocks module module is blocked equivalent to one, and film-formation result blocks mould not as good as two
Block.It is usually the structure of one in conventional art, equivalent to comprising only an anode module and one blocks module, and anode mold
Block and to block module be equipotential, and be that an anode module and two block module in the present embodiment, and potential is differed,
The difference of the present embodiment film-formation result and conventional art can be illustrated with Fig. 3 A to Fig. 3 C, specific as follows：
Fig. 3 A are parallel-plate Electric Field Distribution, and electric field line points to negative electrode by anode, and electric field wire shaped is parallel perpendicular to two
Gaussian Profile is presented in plate.
It is the parallel-plate electrode filled with rare gas such as argon gas for inside, its electric field is equal to the electric field that free charge is produced
The additional electric field sum (vector) produced with polarization charge：Excited for free charge, i.e., under vacuum
Parallel-plate electric field,Produced for bound charge, i.e. dielectric polarization electric field.
Again according to the relation between electrical potential difference and electric field：
U0=E0D, U=Ed,
Obtain,Due to εr＞ 1, illustrates that dielectric polarization electric field has weakening effect for field strength, then has：
E=E0- E ',
If free charge surface density is ± σ on pole plate0, the polarization charge surface density on dielectric surface is ± σ '.
Then have：
Then field strength is：
Wherein it is uniformly filled in permittivity ε=ε in the parallel-plate electric field after dielectricrε0, εrFor dielectric Constant,
ε0For permittivity of vacuum.
For Fig. 3 B, a length of L (L=R of pole plate of Non-parallel Plate electric field2-R1), thickness for/, the extended line of two-plate meets at 0
Point, angle is θ.
Pole plate is divided into many preferable small fillet dr, it is non-parallel according to the relation between parallel-plate electric-field intensity and electrical potential difference
The electric-field intensity E of battery lead plate is approximately：
Using plane-parallel capacitor capacitance equation, then have：
Because whole pole plate is divided into multiple preferable small fillet dr, then nonstationary demand i.e. can obtain to dC integrations
Electric capacity：
ByW is capacitor energy storage, then has：
By W=(U1-U2) ' × I × T, I are output current intensity, and T is electrode conduction time.
Then non-parallel Electrode Field intensity is：
Electric field in conventional art is superimposed for a parallel-plate electric field and a shutter electric field, and the electricity of the embodiment of the present invention
Being superimposed for a parallel-plate electric field and two shutter electric fields.
Such as Fig. 3 C, point solid line region 81 is the corresponding plasma distribution of anode component for comprising only anode module.Dotted line
Region 82 is that the plasma distribution corresponding to the anode component (conventional art) of module is blocked containing anode module and first.Solid line
Region 83 is distributed to install anode module, first and second corresponding plasma of anode component for blocking module.90 are in figure
Target.Anode is close or away from negative electrode, can weaken the electric-field intensity between anode module and cathode module.Again due to charged particle
The power being subject on target surface is relevant with electric-field intensity, and electric-field intensity weakens, and charged particle is also reduced for the etching of target, subtracted
The etching depth of the main etch areas of few target, increases target use time.Because first, second blocks module current potential successively
Increase, plasma can be concentrated to film-forming region, the etching depth increase in the middle of target effectively improves the utilization rate of target.And
And, first and second, which blocks module, can make the plasma of film-forming region close to its, make the plasma point of intermediate region
Cloth trend tends towards stability, and the target atom number that plasma is got within this range is generally equalized, therefore is deposited on the film on substrate
Thickness degree there will not be compared with macrorelief, good into film uniformity.
Referring to Fig. 4 A, in one embodiment, anode module is connected with the second insulation module by special nut, screw
Connect.Wherein, special nut is hollow, internal, outside to have screw thread, and the depth that is screwed into of set screw can adjust anode module and second
The spacing of insulation module.Specifically, special nut is fixed on inside anode module, passed through by screw inside it.Spacing regulation
Schematic diagram such as Fig. 4 B.This fine adjustment is carried out, anode module can be increased or decreased to the distance of target material surface.When downward regulation
When, the distance of increase anode module to target material surface reduces electric-field intensity, can reduce the corresponding target location of anode module
Etching, increases target utilization；When being adjusted up, anode module is reduced to the distance of target material surface, strengthens electric-field intensity, energy
It is enough to accelerate to etch and improve productivity ratio.
Referring to Fig. 5 A, in one embodiment, power supply link block is the knot for the screw hole that corner is equipped with diverse location
Structure, different positions screw hole by nut and screw connection anode module, can adjust anode module and power supply connection
Spacing between module, schematic diagram such as Fig. 5 B.This fine adjustment is carried out, this module application can be made to the film forming of different metal.By
In metallic atom without free path, this regulation can prevent target atom from flying into the chamber of magnetic control sputtering device.
In Fig. 6 A, one embodiment, fixture is provided between water cooling module and the 3rd insulation module.Fixture point top and
Bottom.The outer surface of upper of fixture is provided with screw thread, is threadedly secured in by this in water cooling module.The bottom of fixture is embedded in
In 3rd insulation module, the inner surface of bottom is provided with screw thread, and depth adjustable water-cooling module is screwed into by set screw
With the spacing between the 3rd insulation module, regulation schematic diagram such as Fig. 6 B.This fine adjustment is carried out, main regulation plasma distribution,
And enhancing is to the adhesion effect of particulate, dust etc..
Magnetic control sputtering device anode component in above-described embodiment, including anode module, power supply link block, first to
Four insulation modules, water cooling module, and the first to the second block module, and maintenance cost is reduced using modular design, and
Relative to the integrated design in conventional art, module is blocked by setting two, and anode module, first block module,
Second blocks insulation module is provided between module, so changes electric field form, is finally reached and improves target utilization and film forming is equal
The effect of even property.
Embodiment described above only expresses the several embodiments of the present invention, and it describes more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (7)
1. a kind of magnetic control sputtering device anode component, it is characterised in that the part includes：Anode module, power supply link block,
First to fourth insulation module, water cooling module, and the first to the second block module；
The anode module is rectangular configuration, and center is provided with opening；The power supply link block is frame-shaped construction, connects the sun
The edge of pole module；First insulation module is arranged at the opening of the anode module, and mould is blocked in connection described first
Block；Second insulation module is arranged on the lower section of the anode module and first insulation module；The water cooling module is set
Put in the lower section of second insulation module；Second insulation module and the water cooling module centers also are provided with opening, opening
Module is blocked close to described first, and described first blocks Module-embedding in the gap of the water cooling module；Described 3rd is exhausted
Edge module is arranged on the lower section of the water cooling module close to the side of opening；The 4th insulation module insertion described second is blocked
In module, and connect the 3rd insulation module；Described second blocks module below the 3rd insulation module；
The anode module, described first block module and described second and block the supply voltage that module connected and increase successively.
2. part according to claim 1, it is characterised in that designed using ripple type the upper surface of the anode module.
3. part according to claim 1, it is characterised in that the anode module and described first is blocked between module
The equivalent resistance that first and second insulation module is formed is not less than 40K Ω；Described first blocks module blocks with described second
The equivalent resistance that the 3rd and the 4th insulation module between module is formed is not less than 40K Ω.
4. part according to claim 1, it is characterised in that described first block module and described second block module it
Between be also associated with voltmeter.
5. part according to claim 1, it is characterised in that the anode module and second insulation module pass through spy
Nut processed, screw are connected；The special nut is hollow, and internal, outside to have screw thread, the depth that is screwed into for adjusting the screw can
Adjust the spacing of the anode module and second insulation module.
6. part according to claim 1, it is characterised in that the power supply link block is that corner is equipped with diverse location
Screw hole structure, different positions screw hole by anode module described in nut and screw connection, institute can be adjusted
State the spacing between anode module and the power supply link block.
7. part according to claim 1, it is characterised in that set between the water cooling module and the 3rd insulation module
There is fixture；The outer surface of upper of the fixture is provided with screw thread, is fixed in the water cooling module；The bottom of the fixture
It is embedded in the 3rd insulation module, the inner surface of bottom is provided with screw thread, institute can adjust by the depth that is screwed into of set screw
State the spacing between water cooling module and the 3rd insulation module.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510373209.7A CN104988465B (en) | 2015-06-29 | 2015-06-29 | Magnetic control sputtering device anode component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510373209.7A CN104988465B (en) | 2015-06-29 | 2015-06-29 | Magnetic control sputtering device anode component |
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| Publication Number | Publication Date |
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| CN104988465A CN104988465A (en) | 2015-10-21 |
| CN104988465B true CN104988465B (en) | 2017-10-13 |
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Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02182879A (en) * | 1989-01-06 | 1990-07-17 | Hitachi Ltd | Method and device for sputtering |
| US7879209B2 (en) * | 2004-08-20 | 2011-02-01 | Jds Uniphase Corporation | Cathode for sputter coating |
| US20080308417A1 (en) * | 2005-03-14 | 2008-12-18 | Toyoaki Hirata | Sputtering Apparatus |
| CN201534876U (en) * | 2009-09-27 | 2010-07-28 | 北京京东方光电科技有限公司 | Planar magnetic control sputtering device |
| US20140262749A1 (en) * | 2013-03-14 | 2014-09-18 | Intermolecular, Inc. | Methods of Plasma Surface Treatment in a PVD Chamber |
| CN104099575B (en) * | 2014-07-11 | 2016-08-03 | 京东方科技集团股份有限公司 | A kind of magnetic control sputtering device |
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