CN216237253U - Magnetron sputtering device with variable resistance active anode - Google Patents
Magnetron sputtering device with variable resistance active anode Download PDFInfo
- Publication number
- CN216237253U CN216237253U CN202122770234.2U CN202122770234U CN216237253U CN 216237253 U CN216237253 U CN 216237253U CN 202122770234 U CN202122770234 U CN 202122770234U CN 216237253 U CN216237253 U CN 216237253U
- Authority
- CN
- China
- Prior art keywords
- anode
- cathode
- magnetron sputtering
- mounting plate
- anode assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The utility model discloses a magnetron sputtering device with a variable resistance active anode, which comprises a sputtering power supply, a variable resistor, an anode assembly and a cathode body, wherein a cathode electric connection post is connected between the anode assembly and the cathode body, an anode electric connection pressing sheet and an electric connection block are also installed inside the anode assembly, the anode of the sputtering power supply is electrically connected to the anode electric connection pressing sheet, the cathode of the sputtering power supply is electrically connected to the cathode electric connection post, the variable resistor is provided with two resistor connection ends, the two resistor connection ends are respectively connected to the electric connection block and the anode electric connection pressing sheet, the variable resistor is provided with an adjusting key, the adjusting key slides on the variable resistor, and the outer sides of the two ends of the anode assembly are provided with water connectors. The variable resistor is added between the anode and the ground potential, when the conductive performance of the coating is poor, the resistance value of the resistor is adjusted through the adjusting key, the accumulation of charges is reduced, the phenomenon that the charges are ignited to drop slag on the surface of the substrate is prevented, and the quality of the film layer of the substrate is effectively improved.
Description
Technical Field
The utility model relates to the technical field of magnetron sputtering, in particular to a magnetron sputtering device with a variable resistance active anode.
Background
Magnetron sputtering is one type of Physical Vapor Deposition (PVD). Magnetron sputtering increases the sputtering rate by introducing a magnetic field at the surface of the target cathode, using the confinement of the magnetic field to charged particles to increase the plasma density. Under the action of the electric field, free electrons or field emission electrons move towards a cathode under the action of electric field force, collide with atoms in the movement process to generate ions and secondary electrons, under the action of the magnetic field, the electrons move along a spiral track, the movement track of the electrons is increased, the collision times with the atoms are increased, the ions move towards the cathode under the action of the electric field to bombard the surface of a target material, target material particles are sputtered, and most of the particles finally reach the surface of a substrate and are deposited into a film.
In a conventional magnetron sputtering apparatus, an anode cover used for a planar cathode is generally grounded (connected to a ground potential of a cavity or the cathode), and actually, in a sputtering process, due to possible coating pollution on the anode, when the conductivity of a coating is poor, charge accumulation can be caused, a sparking phenomenon occurs, so that slag on a target material falls onto a film layer of a substrate, and the film layer generates defects.
SUMMERY OF THE UTILITY MODEL
One object of the present invention is: provides a magnetron sputtering device with a variable resistance active anode, which is used for solving the problems in the prior art.
In order to achieve the purpose, the utility model adopts the following technical scheme:
a magnetron sputtering device with a variable resistance active anode comprises a sputtering power supply, a variable resistance, an anode component and a cathode body, the anode assembly is positioned above the cathode body, a cathode connecting post is connected between the anode assembly and the cathode body, an anode connecting pressing sheet and a connecting block are also arranged in the anode assembly, the anode of the sputtering power supply is electrically connected to the anode connecting pressing sheet, the cathode of the sputtering power supply is electrically connected to the cathode connecting post, the variable resistor is provided with two resistor connecting ends which are respectively connected to the power connecting block and the anode connecting voltage sheet, the variable resistor is provided with an adjusting key, the adjusting key slides on the variable resistor, water connectors are arranged on the outer sides of two ends of the anode assembly, and the water connectors are communicated to the inside of the anode assembly.
As an optimal technical scheme, the anode assembly and the mounting plate is installed between the cathode bodies, an upper insulating cushion block and a lower insulating cushion block are arranged in the middle of the mounting plate, the upper insulating cushion block penetrates through the mounting plate, the lower insulating cushion block penetrates through the cathode bodies, and the cathode electric connecting columns sequentially penetrate through the upper insulating cushion block and the lower insulating cushion block.
As a preferred technical scheme, one end of the anode assembly is provided with a socket, the socket is connected with a connector, and the anode of the sputtering power supply and the cathode of the sputtering power supply both penetrate through the connector.
As a preferred technical scheme, be provided with the safety cover on the mounting panel, the lower extreme border of safety cover with the mounting panel passes through screw fixed connection.
As a preferred technical scheme, long vertical plates are arranged below two sides of the mounting plate, the lower ends of the long vertical plates are connected with guard plates, and the cathode body is located between the two guard plates.
As a preferred technical scheme, the side of the anode assembly is provided with a sealing seat, the electricity connection block is installed on the sealing seat, a water connection block is further arranged on the sealing seat, an in-plate flow channel is arranged inside the long vertical plate, and the water connection block is communicated with the in-plate flow channel.
As a preferable technical solution, a fixing groove is provided on an outer side of the long vertical plate, and a fixing screw connected to the mounting plate is installed in the fixing groove.
As a preferable technical scheme, a water guide pipe is arranged on the anode contact wafer, and the water guide pipe penetrates through the lower end of the anode assembly and the upper end of the cathode body and then extends into the cathode body.
As a preferred technical scheme, cathode insulating cushion blocks are arranged at two ends of the mounting plate, and the water guide pipe penetrates through the cathode insulating cushion blocks.
As an optimal technical scheme, the upper insulating cushion block and the lower insulating cushion block are both provided with sealing grooves, the sealing grooves are annular, and sealing rings are sleeved in the sealing grooves.
The utility model has the beneficial effects that: the magnetron sputtering device with the variable resistance active anode is provided, the variable resistance is added between the anode and the ground potential, when the electric conductivity of a coating is poor (the process for sputtering the coating with the poor electric conductivity comprises ITO, Si and the like), the resistance value of the resistance is adjusted through the adjusting key, the accumulation of electric charges is reduced, the electric charges are prevented from being ignited and the slag is prevented from falling onto the surface of a substrate, and the quality of the substrate coating is effectively improved.
Drawings
The utility model is explained in more detail below with reference to the figures and examples.
FIG. 1 is a schematic diagram of a first overall structure of a magnetron sputtering apparatus with a variable resistance active anode according to an embodiment;
FIG. 2 is a schematic diagram of a second overall structure of a magnetron sputtering apparatus with a variable resistance active anode according to an embodiment;
FIG. 3 is an assembly diagram of the mounting plate, sputtering power supply and variable resistor according to an embodiment;
FIG. 4 is a bottom schematic view of an embodiment of a mounting plate;
FIG. 5 is a schematic internal view of a magnetron sputtering apparatus with a variable resistance active anode according to an embodiment.
In fig. 1 to 5:
1. a sputtering power supply; 2. a variable resistor; 3. an anode assembly; 4. a cathode body; 5. the cathode is connected with the electric pole; 6. connecting the anode with a pressing sheet; 7. a power connection block; 8. a water joint; 9. mounting a plate; 10. an upper insulating cushion block; 11. a lower insulating cushion block; 12. a water conduit; 13. a cathode insulating cushion block; 14. a long vertical plate; 15. a guard plate; 16. a sealing seat; 17. water jointing blocks; 18. a plug; 19. an in-board flow channel; 20. fixing grooves; 21. a set screw; 22. a seal ring; 23. a connecting screw; 24. a hoisting ring; 25. an adjustment key; 26. a connector is provided.
Detailed Description
The technical scheme of the utility model is further explained by the specific implementation mode in combination with the attached drawings.
As shown in fig. 1 to 5, in this embodiment, a magnetron sputtering apparatus with a variable resistance active anode includes a sputtering power supply 1, a variable resistor 2, an anode assembly 3 and a cathode body 4, the anode assembly 3 is located above the cathode body 4, a cathode connecting post 5 is connected between the anode assembly 3 and the cathode body 4, an anode connecting tab 6 and a connecting block 7 are further installed inside the anode assembly 3, an anode of the sputtering power supply 1 is electrically connected to the anode connecting tab 6, a cathode of the sputtering power supply 1 is electrically connected to the cathode connecting post 5, the variable resistor 2 has two resistor connecting ends, the two resistor connecting ends are respectively connected to the connecting block 7 and the anode connecting tab 6, an adjusting key 25 is disposed on the variable resistor 2, the adjusting key 25 slides on the variable resistor 2, and water joints 8 are arranged on the outer sides of two ends of the anode assembly 3, and the water joints 8 are communicated to the inside of the anode assembly 3.
When the magnetron sputtering device with the variable-resistance active anode works, electrons are released by the work of the anode assembly 3 and the cathode body 4 to bombard a target material, and a coating process is formed when target material particles fall onto a substrate. In actual sputtering process, there can be the cladding material pollution on the positive pole subassembly 3 with the negative pole body 4 during operation, electric conductivity can present the not good condition, and then produces the problem of electric charge accumulation, when electric charge accumulation to certain degree, the target produces the phenomenon of striking sparks, the residue that appears of striking sparks can drop to the substrate surface of coating film on, the rete can form the defect because of the residue, and when not good appears in electric conductivity, can be according to particular case, artificial regulation the position in adjust key 25 will the resistance of variable resistance 2 changes, adjusts the electric current in the return circuit to change magnetic field and sputtering rate, avoid the emergence of the phenomenon of striking sparks.
The utility model discloses a cathode assembly, including anode assembly 3, cathode body 4, mounting panel 9, the middle part of mounting panel 9 is provided with insulating cushion 10 and lower insulating cushion 11, it passes to go up insulating cushion 10 mounting panel 9, lower insulating cushion 11 passes cathode body 4, cathode electricity post 5 passes in proper order go up insulating cushion 10 with lower insulating cushion 11.
The anode assembly 3 and the cathode body 4 are combined together under the action of the mounting plate 9, so that the structural stability is better.
The one end of positive pole subassembly 3 is provided with the socket, it has connector 26 to connect on the socket, sputter power 1 the positive pole with sputter power 1's negative pole all passes connector 26, according to the demand of reality, can pull out on the positive pole subassembly 3 connector 26 moves to suitable position work or keeps in, need not because sputter power 1 with variable resistance 2's position and influenced.
Specifically, be provided with the safety cover on the mounting panel 9, the lower extreme border of safety cover with mounting panel 9 passes through screw fixed connection, the safety cover can effectively protect and be in each spare part of positive pole subassembly 3 further reduces the emergence probability of the phenomenon of striking sparks.
The long vertical plates 14 are arranged below two sides of the mounting plate 9, the lower ends of the long vertical plates 14 are connected with guard plates 15, the cathode bodies 4 are located between the two guard plates 15, the sealing seat 16 is arranged on the side edge of the anode assembly 3, the power connection block 7 is mounted on the sealing seat 16, the sealing seat 16 is further provided with a water connection block 17, an in-plate flow passage 19 is arranged inside the long vertical plates 14, and the water connection block 17 is communicated with the in-plate flow passage 19.
The long vertical plate 14 and the guard plate 15 on two sides form a cavity for placing the cathode body 4, the water connecting block 17 is communicated to the in-plate flow channel 19 in the long vertical plate 14 to form a water cooling loop, and a plug 18 is arranged outside the in-plate flow channel 19 communicated to the long vertical plate 14 to plug.
A fixing groove 20 is arranged on the outer side of the long vertical plate 14, a fixing screw 21 connected to the mounting plate 9 is installed in the fixing groove 20, and the mounting plate 9 and the long vertical plate 14 are combined together under the action of the fixing screw 21.
The anode contact wafer 6 is provided with a water guide pipe 12, the water guide pipe 12 penetrates through the lower end of the anode assembly 3 and the upper end of the cathode body 4 and then extends into the cathode body 4, cathode insulating cushion blocks 13 are arranged at two ends of the mounting plate 9, the water guide pipe 12 penetrates through the cathode insulating cushion blocks 13, the water guide pipe 12 is added, water-cooling treatment is carried out on the anode and the cathode, the integral temperature is reduced, and in order to guarantee safety, the upper insulating cushion block 10, the lower insulating cushion block 11 and the cathode insulating cushion blocks 13 are separated.
The upper insulating cushion block 10 and the lower insulating cushion block 11 are both provided with sealing grooves, the sealing grooves are annular, sealing rings 22 are sleeved in the sealing grooves, connecting screws 23 are arranged on the upper insulating cushion block 10, and the connecting screws 23 penetrate through the upper insulating cushion block 10 and then are in threaded connection with the lower insulating cushion block 11.
In the aspect of sealing performance, except for the adoption of an insulating cushion block, the sealing ring 22 is additionally arranged in the sealing groove, and when the upper insulating cushion block 10 and the lower insulating cushion block 11 are locked together through the connecting screw 23, the sealing ring 22 is extruded to form a sealing layer, so that the working states of an anode and a cathode are effectively protected.
The border of mounting panel 9 is provided with rings 24, rings 24 threaded connection is in on the mounting panel 9, because the weight of integrated device is great, in order to facilitate the transport and remove to suitable position, can adopt rings 24 carry out hoist and mount processing, safe and reliable.
It should be noted that the above-mentioned embodiments are only preferred embodiments of the present invention and the technical principles used, and any changes or substitutions which can be easily conceived by those skilled in the art within the technical scope of the present invention disclosed herein should be covered within the protective scope of the present invention.
Claims (10)
1. A magnetron sputtering device with a variable resistance active anode is characterized by comprising a sputtering power supply, a variable resistance, an anode component and a cathode body, the anode assembly is positioned above the cathode body, a cathode connecting post is connected between the anode assembly and the cathode body, an anode connecting pressing sheet and a connecting block are also arranged in the anode assembly, the anode of the sputtering power supply is electrically connected to the anode connecting pressing sheet, the cathode of the sputtering power supply is electrically connected to the cathode connecting post, the variable resistor is provided with two resistor connecting ends which are respectively connected to the power connecting block and the anode connecting voltage sheet, the variable resistor is provided with an adjusting key, the adjusting key slides on the variable resistor, water connectors are arranged on the outer sides of two ends of the anode assembly, and the water connectors are communicated to the inside of the anode assembly.
2. The magnetron sputtering device as claimed in claim 1, wherein a mounting plate is installed between the anode assembly and the cathode body, an upper insulating pad and a lower insulating pad are installed in the middle of the mounting plate, the upper insulating pad passes through the mounting plate, the lower insulating pad passes through the cathode body, and the cathode contact pin passes through the upper insulating pad and the lower insulating pad in sequence.
3. The magnetron sputtering device with a variable resistance active anode of claim 1 wherein one end of the anode assembly is provided with a socket, the socket is connected with a connector, and the anode of the sputtering power supply and the cathode of the sputtering power supply both pass through the connector.
4. The magnetron sputtering apparatus with a variable resistance active anode according to claim 2, wherein a protective cover is disposed on the mounting plate, and a lower end edge of the protective cover is fixedly connected to the mounting plate by a screw.
5. The magnetron sputtering device with the variable-resistance active anode as claimed in claim 2, wherein long vertical plates are arranged below two sides of the mounting plate, the lower ends of the long vertical plates are connected with guard plates, and the cathode body is located between the two guard plates.
6. The magnetron sputtering device with the variable-resistance active anode according to claim 5, wherein a sealing seat is arranged on a side edge of the anode assembly, the power connection block is mounted on the sealing seat, a water connection block is further arranged on the sealing seat, an in-plate flow channel is arranged inside the long vertical plate, and the water connection block is communicated with the in-plate flow channel.
7. The magnetron sputtering apparatus with a variable resistance active anode according to claim 5 wherein the outside of the long vertical plate is provided with a fixing groove in which a fixing screw connected to the mounting plate is installed.
8. The magnetron sputtering device as claimed in claim 2, wherein a water guiding pipe is disposed on the anode contact wafer, and the water guiding pipe passes through the lower end of the anode assembly and the upper end of the cathode body and extends into the cathode body.
9. The magnetron sputtering apparatus with a variable resistance active anode according to claim 8 wherein the mounting plate is provided with cathode insulating blocks at both ends, and the water conduit passes through the cathode insulating blocks.
10. The magnetron sputtering device according to claim 2, wherein the upper insulating pad and the lower insulating pad are each provided with a sealing groove, the sealing grooves are annular, and a sealing ring is sleeved in each sealing groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122770234.2U CN216237253U (en) | 2021-11-12 | 2021-11-12 | Magnetron sputtering device with variable resistance active anode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122770234.2U CN216237253U (en) | 2021-11-12 | 2021-11-12 | Magnetron sputtering device with variable resistance active anode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216237253U true CN216237253U (en) | 2022-04-08 |
Family
ID=80995298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122770234.2U Active CN216237253U (en) | 2021-11-12 | 2021-11-12 | Magnetron sputtering device with variable resistance active anode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216237253U (en) |
-
2021
- 2021-11-12 CN CN202122770234.2U patent/CN216237253U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101641765A (en) | Deposition system with electrically isolated pallet and anode assemblies | |
| CN1123052C (en) | Method and apparatus for ionized physical vapor deposition | |
| EP0225680B1 (en) | Improved electric arc vapor deposition method | |
| CN1322617C (en) | Carbon coated battery electrodes | |
| WO2012169747A2 (en) | Plasma-generating source comprising a belt-type magnet, and thin-film deposition system using same | |
| US5334298A (en) | Sputtering cathode | |
| US20020121436A1 (en) | Target sidewall design to reduce particle generation during magnetron sputtering | |
| KR20100109497A (en) | Plasma processing apparatus and plasma processing method | |
| TW201214522A (en) | Sputtering chamber, pre-clean chamber and plasma processing apparatus | |
| JP2016528677A (en) | Substrate processing system, ion implantation system, and beamline ion implantation system | |
| CN101694852B (en) | Solar battery and manufacturing method | |
| CN216237253U (en) | Magnetron sputtering device with variable resistance active anode | |
| CN201512578U (en) | Target structure of magnetron sputtering coating equipment | |
| EP0544831B1 (en) | Sputtering apparatus and sputtering method of improving ion flux distribution uniformity on a substrate | |
| JPH11302843A (en) | Method for depositing zinc oxide film, apparatus therefor and photovoltaic element | |
| CN105506568B (en) | A kind of new twin external rotating cathode | |
| CN201690672U (en) | Atmospheric pressure direct current arc electric discharge plasma generating device | |
| CN106884150B (en) | Suspension anode and magnetron sputtering device with same | |
| JP2954885B2 (en) | Faraday cup assembly of semiconductor ion implantation facility | |
| CN216550672U (en) | Magnetron sputtering device with bias active anode | |
| JP3686540B2 (en) | Manufacturing method of electronic device | |
| CN201301339Y (en) | High-power planar magnetic control spluttering cathode | |
| JP5213739B2 (en) | Equipment for processing substrates | |
| KR20110046074A (en) | Magnetic field control cathode gun of sputtering deposition system | |
| CN220202022U (en) | Auxiliary anode device of roll-to-roll magnetron sputtering vacuum coating machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |