CN202989274U - Magnetron sputtering plane target shielding case - Google Patents

Magnetron sputtering plane target shielding case Download PDF

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Publication number
CN202989274U
CN202989274U CN 201220665987 CN201220665987U CN202989274U CN 202989274 U CN202989274 U CN 202989274U CN 201220665987 CN201220665987 CN 201220665987 CN 201220665987 U CN201220665987 U CN 201220665987U CN 202989274 U CN202989274 U CN 202989274U
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China
Prior art keywords
shielding case
magnetron sputtering
side shield
target
surrounding side
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Expired - Fee Related
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CN 201220665987
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Chinese (zh)
Inventor
彭春超
何保军
赵跃林
高文波
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XUCHANG TIANDIHE SOLAR ENERGY CO Ltd
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XUCHANG TIANDIHE SOLAR ENERGY CO Ltd
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Priority to CN 201220665987 priority Critical patent/CN202989274U/en
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Publication of CN202989274U publication Critical patent/CN202989274U/en
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Abstract

The utility model relates to a magnetron sputtering plane target shielding case which comprises a target back plate, a shielding case, a four-side baffle, an upper cover plate and a fastening screw, wherein the four-side baffle is of a whole structure; the upper cover plate is also of a whole structure; the four-side baffle is fixed on the target back plate by the screw; and a notch is reserved in the upper side of the four-side baffle to ensure that the particle impurities generated in a sputtering process are drained. The improved magnetron sputtering plane target shielding case provided by the utility model can reduce deformation in the mounting and practical coating heating process, so that the distance from a target base is kept stable and the occurrence frequency of the spark striking phenomenon caused by the extremely short distance between a cathode and an anode is reduced.

Description

Magnetron sputtering planar targets shielding case
Technical field:
The utility model relates to a kind of shielding case, particularly relates to a kind of remodeling magnetron sputtering planar targets shielding case, is applied to the Magnetron Sputtering Thin Film deposition, relates to the magnetron sputtering equipment technical field.
Background technology:
In the vacuum magnetic-control sputtering process, electronics movement locus anode with trochoid under the effect of electromagnetic field is close, and with Ar atom generation ionizing collision, the Ar ion of generation clashes into target and then the sputter effect occurs under electric field action in this migration.Wherein the spinning roller radius of the trochoidal track of electronics is
Figure 360012DEST_PATH_IMAGE001
For guaranteeing the purity of deposit film in magnetron sputtering process, need in the non-target of planar targets side surrounding and target surface zone interpolation shielding case, the distance between shielding case and cathode targets
Figure 214836DEST_PATH_IMAGE002
, namely
Figure 181524DEST_PATH_IMAGE003
(U is the voltage of magnetron sputtering, ), if U=500 is V, B=0.03 T,
Traditional shielding case is Split type structure in the application of large-scale planar targets, target side surrounding directly is fixed on the target backboard by screw for four baffle plates that separate, the non-target of target marginal surface surrounding zone is by the cover plate shade that is fixed on side shield, in the use of large-scale planar target, the side shield of this kind isolating construction causes part side plate distance and cathode targets side excessively near because deformation easily occurs in heating because length is long in process of production, is easier to occur sparking or short circuit phenomenon.
The utility model content:
The utility model is exactly the deficiency that exists in order to overcome prior art, and traditional target shielding case is made corresponding improvement, designs a kind of remodeling magnetron sputtering planar targets shielding case.
technical scheme: a kind of magnetron sputtering planar targets shielding case, comprise the target backboard, shielding case, the surrounding side shield, upper cover plate, set screw forms, described surrounding side shield is one-piece construction, upper cover plate is also one-piece construction, described surrounding side shield is fixed on the target backboard by screw, the leaving certain gaps uncovered by the economic plan of described surrounding side shield upside, the granule foreign that produces in the assurance sputter procedure is missed, edge and the cathode target upper surface maintenance sustained height that is positioned at surrounding side shield inside under described breach, described surrounding side shield should guarantee that itself and its inner cathode target lateral distance is 0.1~0.5cm after installing, preferred 0.2cm, described upper cover plate is fixed on the surrounding side shield by screw, upper cover plate and distance parallel with the cathode target upper surface that is positioned at surrounding side shield inside guarantees to be 0.1~0.5cm, preferred 0.2cm, align with outer, cathode target upper surface target zone in the inside edge of upper cover plate, guarantee that non-target zone blocked shielding fully.
The beneficial effects of the utility model: remodeling magnetron sputtering planar targets shielding case of the present utility model, can reduce the deformation in installation and actual plated film heat-processed, make that between itself and target pedestal, distance keeps stable, reduce hypotelorism between anode and cathode and produce the occurrence frequency of spark phenomenon.
Description of drawings:
Fig. 1 is the front view of remodeling planar targets shielding case surrounding side plate;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is the left view of Fig. 1;
Fig. 4 is the vertical view of remodeling planar targets shielding case upper cover plate;
Fig. 5 is remodeling planar targets shielding case wiring layout.
Number in the figure is 1 for the target backboard, and 2 is the surrounding side shield, and 3 is upper cover plate; 4 is set screw, and 5 is breach.
Embodiment:
Referring to Fig. 1-Fig. 5, magnetron sputtering planar targets shielding case comprises target backboard 1, surrounding side shield 2 and upper cover plate 3, and set screw 4.Wherein, described surrounding side shield 2 is one-piece construction, and the four edges frame of surrounding side shield 2 can support mutually, guarantees that its deformation is minimum in installation and heat-processed.The below of described surrounding side shield 2 is respectively arranged with outside flange, be provided with open holes on flange, utilize set screw 4 that described surrounding side shield 2 is fixed on target backboard 1, should guarantee after installation that described surrounding side shield 2 and cathode target side are the 0.2cm left and right.Described surrounding side shield 2 upside leaving certain gaps uncovered by the economic plans 5, the granule foreign that produces in the assurance sputter procedure is missed.Simultaneously, 5 times edges of described breach are in a level attitude with the cathode target upper surface that is positioned at surrounding side shield 2 inside, after installing, described surrounding side shield 2 should guarantee that itself and cathode target lateral distance are the 0.2cm left and right, upper cover plate 3 is also one-piece construction, described upper cover plate 3 is fixed on surrounding side shield 2 by set screw 4, and distance parallel with the target upper surface guarantees the left and right for 0.2cm, should align with outer, cathode target upper surface target zone in upper cover plate 3 inside edges, guarantee that non-target zone blocked shielding fully.

Claims (7)

1. magnetron sputtering planar targets shielding case, comprise target backboard (1), surrounding side shield (2), upper cover plate (3), set screw (4), described upper cover plate (3) is fixed on surrounding side shield (2) by set screw (4), it is characterized in that, described surrounding side shield (2) is one-piece construction, and upper cover plate (3) is also one-piece construction, and described surrounding side shield (2) is fixed on target backboard (1) by set screw (4).
2. magnetron sputtering planar targets shielding case according to claim 1, is characterized in that described surrounding side shield (2) upside leaving certain gaps uncovered by the economic plan (5).
3. magnetron sputtering planar targets shielding case according to claim 2, is characterized in that, described breach (5) is lower keeps sustained height along the cathode target upper surface inner with being positioned at surrounding side shield (2).
4. magnetron sputtering planar targets shielding case according to claim 1, is characterized in that, described surrounding side shield (2) the cathode target lateral distance inner with it is 0.1~0.5cm.
5. magnetron sputtering planar targets shielding case according to claim 4, is characterized in that, described surrounding side shield (2) is 0.20cm with the cathode target lateral distance.
6. magnetron sputtering planar targets shielding case according to claim 1, it is characterized in that, parallel and the distance of described upper cover plate (3) the cathode target upper surface inner with being positioned at surrounding side shield (2) guarantees to be 0.1~0.5cm, aligns with cathode target upper surface target regional outer in the inside edge of upper cover plate.
7. magnetron sputtering planar targets shielding case according to claim 6, is characterized in that, described upper cover plate (3) is parallel with the cathode target upper surface and be 0.20cm apart from assurance.
CN 201220665987 2012-12-06 2012-12-06 Magnetron sputtering plane target shielding case Expired - Fee Related CN202989274U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220665987 CN202989274U (en) 2012-12-06 2012-12-06 Magnetron sputtering plane target shielding case

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Application Number Priority Date Filing Date Title
CN 201220665987 CN202989274U (en) 2012-12-06 2012-12-06 Magnetron sputtering plane target shielding case

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CN202989274U true CN202989274U (en) 2013-06-12

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106011770A (en) * 2016-08-02 2016-10-12 江苏宇天港玻新材料有限公司 Magnetron sputtering planar target material shield cover
CN111519144A (en) * 2020-05-19 2020-08-11 河南大学 Target holder applied to pulse laser codeposition and mounting method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106011770A (en) * 2016-08-02 2016-10-12 江苏宇天港玻新材料有限公司 Magnetron sputtering planar target material shield cover
CN111519144A (en) * 2020-05-19 2020-08-11 河南大学 Target holder applied to pulse laser codeposition and mounting method
CN111519144B (en) * 2020-05-19 2021-04-09 河南大学 Target holder applied to pulse laser codeposition and mounting method

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130612

Termination date: 20141206

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