CN104988348A - Ultra-fine platinum-rhodium flat wire and fabrication method thereof - Google Patents
Ultra-fine platinum-rhodium flat wire and fabrication method thereof Download PDFInfo
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- CN104988348A CN104988348A CN201510278402.2A CN201510278402A CN104988348A CN 104988348 A CN104988348 A CN 104988348A CN 201510278402 A CN201510278402 A CN 201510278402A CN 104988348 A CN104988348 A CN 104988348A
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- rhodium
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- platinum rhodium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45169—Platinum (Pt) as principal constituent
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses an ultra-fine platinum-rhodium flat wire, and relates to the technical field of production of bonding wires. The ultra-fine platinum-rhodium flat wire is characterized in that the ultra-fine platinum-rhodium flat wire is mainly formed by platinum-rhodium and auxiliary materials according to the proportion of 99.9:0.1, and the auxiliary materials comprise the following raw materials in parts by weight: 20-22 parts of iron, 30-34 parts of copper, 21-32 parts of manganese, 32-43 parts of magnesium, 12-14 parts of chromium, 43-84 parts of titanium, 42-94 parts of beryllium, 53-85 parts of aluminum and 24-55 parts of zinc. The ultra-fine platinum-rhodium flat wire has the benefits that a technological process is concise; a raw material ratio is reasonable, and after platinum-rhodium and other mixed auxiliary materials are matched at the reasonable ratio, and then processed by scientific ordered steps, the prepared bonding wire is high in product quality and higherin fineness, is more suitable for the requirements of the electronics industry at the present stage, is applied to various precision electronic equipment, and is good in using effect and convenient to popularize and use.
Description
Technical field
The present invention relates to bonding wire production technical field, be specifically related to a kind of super thin platinum rhodium flat filament band and preparation method thereof.
Background technology
Intelligence lead-in wire is widely used in large server, motor, intelligent instrument instrument, holder, the chips such as medical apparatus and instruments, and photovoltaic, the Electronic Packaging such as diode triode.
Along with the development of market and technology, chip intelligent instrument function constantly strengthens, lead-in wire is more and more, and volume is more and more less, intelligent instrument instrument, holder, the chips such as medical apparatus and instruments, shared area ratio constantly rises, therefore, Studies of The Superfine spacing bonding techniques is the gordian technique that the miniaturization of solution chip must solve, but the performance of the bonding wire produced in the market still compares poor, and it is when preparation, selected batching is also unreasonable, the mode of simultaneously processing is short of, be easy to cause lead-in wire even not, result of use is also not obvious, the demand of people can not be met.
Summary of the invention:
It is reasonable that technical problem to be solved by this invention is to provide a kind of formulation ratio, and preparation technology is super thin platinum rhodium flat filament band and preparation method thereof simply and easily.
Technical problem to be solved by this invention realizes by the following technical solutions:
A kind of super thin platinum rhodium flat filament band, it is characterized in that: make primarily of platinum rhodium and auxiliary material, described platinum rhodium and the ratio of auxiliary material are 99.9:0.1;
Described auxiliary material comprises the raw material of following weight part: iron 20-22 part, copper 30-34 part, manganese 21-32 part, magnesium 32-43 part, chromium 12-14 part, titanium 43-84 part, beryllium 42-94 part, aluminium 53-85 part, zinc 24-55 part.
The preferred weight part of described auxiliary material is: iron 21 parts, copper 32 parts, 25 parts, manganese, 36 parts, magnesium, chromium 13 parts, titanium 61 parts, beryllium 74 parts, 77 parts, aluminium, 46 parts, zinc.
Another object of the present invention is to provide a kind of method preparing super of the present invention thin platinum rhodium flat filament band, it is characterized in that comprising the following steps:
A, select a vacuum melting furnace, put in vacuum melting furnace by the platinum rhodium in raw material, adjustment in-furnace temperature is 1000-1800 DEG C, carries out high melt;
B, after the complete melting of platinum rhodium, added successively by auxiliary material in raw material and enter smelting furnace, controlling rotating speed is that the speed of 2500-3000r/min carries out high-speed stirring, after stirring, leaves standstill 45 minutes;
C, by the raw material in above-mentioned steps b by casting die, cast out the platinum rhodium bar that diameter is 8mm, then naturally cooling;
D, the platinum rhodium bar mould of 8mm is drawn into thick 3mm platinum-rhodium wire material, by thick for 3mm platinum-rhodium wire with the high temperature annealing 65 minutes of 1000-1200 DEG C, after then carrying out cold extrusion 8-10 time, obtains the platinum-rhodium wire material of required fineness;
E, by the platinum-rhodium wire after steps d process with the high temperature annealing 45 minutes of 400-500 DEG C to eliminate machining stress, furnace cooling, be then cold drawn to required diameter;
F, by the platinum-rhodium wire in step e after the flat mould heart is worked into required specification, finally namely can be made into super thin platinum rhodium flat filament band after naturally cooling again.
The invention has the beneficial effects as follows: present invention process flow process is succinct, reasonable raw material proportioning, after carrying out rational proportion by platinum rhodium and other mixed accessories, processed by the step of scientific order, the bonding wire of making not only quality product is excellent, the fineness of making more refinement, be applicable to the demand of present stage electron trade, be applicable to various sophisticated electronics, result of use is good, is convenient to promote and use.
Embodiment
The technique means realized to make the present invention, creation characteristic, reaching object and effect is easy to understand, below in conjunction with specific embodiment, setting forth the present invention further.
Embodiment 1
Take the platinum rhodium of 999g and the auxiliary material of 1g, (auxiliary material is according to iron 20 parts, copper 30 parts, 21 parts, manganese, 32 parts, magnesium, chromium 12 parts, titanium 43 parts, beryllium 42 parts, 53 parts, aluminium, the component that zinc is 24 parts is configured), then a vacuum melting furnace is selected, platinum rhodium in raw material is put in vacuum melting furnace, in-furnace temperature is regulated to be 1000 DEG C, carry out high melt, after the complete melting of platinum rhodium, auxiliary material in raw material is added successively and enters smelting furnace, control rotating speed is that the speed of 2500r/min carries out high-speed stirring, after stirring, leave standstill after 45 minutes, pass through casting die, cast out the platinum rhodium bar that diameter is 8mm, then naturally cooling, the platinum rhodium bar mould of 8mm is drawn into thick 3mm platinum-rhodium wire material, by thick for 3mm platinum-rhodium wire with the high temperature annealing 65 minutes of 1000 DEG C, then the platinum-rhodium wire material of required fineness is obtained after carrying out cold extrusion 8-10 time, and then with the high temperature annealing 45 minutes of 400 DEG C to eliminate machining stress, furnace cooling, then after being cold drawn to required diameter, after the flat mould heart is worked into required specification, namely super thin platinum rhodium flat filament band is can be made into after last naturally cooling again.
Embodiment 2
Take the platinum rhodium of 99.9g and the auxiliary material of 0.1g, (auxiliary material is according to iron 21 parts, copper 32 parts, 25 parts, manganese, 36 parts, magnesium, chromium 13 parts, titanium 61 parts, beryllium 74 parts, 77 parts, aluminium, the component that zinc is 46 parts is configured), then a vacuum melting furnace is selected, platinum rhodium in raw material is put in vacuum melting furnace, in-furnace temperature is regulated to be 1400 DEG C, carry out high melt, after the complete melting of platinum rhodium, auxiliary material in raw material is added successively and enters smelting furnace, control rotating speed is that the speed of 2750r/min carries out high-speed stirring, after stirring, leave standstill after 45 minutes, pass through casting die, cast out the platinum rhodium bar that diameter is 8mm, then naturally cooling, the platinum rhodium bar mould of 8mm is drawn into thick 3mm platinum-rhodium wire material, by thick for 3mm platinum-rhodium wire with the high temperature annealing 65 minutes of 1100 DEG C, then the platinum-rhodium wire material of required fineness is obtained after carrying out cold extrusion 8-10 time, and then with the high temperature annealing 45 minutes of 450 DEG C to eliminate machining stress, furnace cooling, then after being cold drawn to required diameter, after the flat mould heart is worked into required specification, namely super thin platinum rhodium flat filament band is can be made into after last naturally cooling again.
More than show and describe ultimate principle of the present invention and principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification sheets just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection domain is defined by appending claims and equivalent thereof.
Claims (3)
1. a super thin platinum rhodium flat filament band, is characterized in that: make primarily of platinum rhodium and auxiliary material, and described platinum rhodium and the ratio of auxiliary material are 99.9:0.1;
Described auxiliary material comprises the raw material of following weight part: iron 20-22 part, copper 30-34 part, manganese 21-32 part, magnesium 32-43 part, chromium 12-14 part, titanium 43-84 part, beryllium 42-94 part, aluminium 53-85 part, zinc 24-55 part.
2. a kind of super according to claim 1 thin platinum rhodium flat filament band, it is characterized in that, the preferred weight part of described auxiliary material is: iron 21 parts, copper 32 parts, 25 parts, manganese, 36 parts, magnesium, chromium 13 parts, titanium 61 parts, beryllium 74 parts, 77 parts, aluminium, 46 parts, zinc.
3. prepare a method for super of the present invention thin platinum rhodium flat filament band, it is characterized in that, comprise the following steps:
A, select a vacuum melting furnace, put in vacuum melting furnace by the platinum rhodium in raw material, adjustment in-furnace temperature is 1000-1800 DEG C, carries out high melt;
B, after the complete melting of platinum rhodium, added successively by auxiliary material in raw material and enter smelting furnace, controlling rotating speed is that the speed of 2500-3000r/min carries out high-speed stirring, after stirring, leaves standstill 45 minutes;
C, by the raw material in above-mentioned steps b by casting die, cast out the platinum rhodium bar that diameter is 8mm, then naturally cooling;
D, the platinum rhodium bar mould of 8mm is drawn into thick 3mm platinum-rhodium wire material, by thick for 3mm platinum-rhodium wire with the high temperature annealing 65 minutes of 1000-1200 DEG C, after then carrying out cold extrusion 8-10 time, obtains the platinum-rhodium wire material of required fineness;
E, by the platinum-rhodium wire after steps d process with the high temperature annealing 45 minutes of 400-500 DEG C to eliminate machining stress, furnace cooling, be then cold drawn to required diameter;
F, by the platinum-rhodium wire in step e after the flat mould heart is worked into required specification, finally namely can be made into super thin platinum rhodium flat filament band after naturally cooling again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510278402.2A CN104988348A (en) | 2015-05-27 | 2015-05-27 | Ultra-fine platinum-rhodium flat wire and fabrication method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510278402.2A CN104988348A (en) | 2015-05-27 | 2015-05-27 | Ultra-fine platinum-rhodium flat wire and fabrication method thereof |
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| CN104988348A true CN104988348A (en) | 2015-10-21 |
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| CN201510278402.2A Pending CN104988348A (en) | 2015-05-27 | 2015-05-27 | Ultra-fine platinum-rhodium flat wire and fabrication method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3194657A (en) * | 1963-03-13 | 1965-07-13 | Int Nickel Co | Process for making workable ruthenium and product thereof |
| US3357825A (en) * | 1965-01-11 | 1967-12-12 | Nat Res Corp | Production of metals |
| CN101561322A (en) * | 2009-05-18 | 2009-10-21 | 无锡英特派金属制品有限公司 | Dispersion strengthening platinum/rhodium13-platinum thermocouple wires and production method thereof |
| CN103715111A (en) * | 2012-10-03 | 2014-04-09 | 田中电子工业株式会社 | Copper-platinum alloy wire for connecting in semiconductor apparatus |
| CN103952584A (en) * | 2014-05-20 | 2014-07-30 | 重庆材料研究院有限公司 | Platinum-rhodium thermocouple fine wire material for measuring temperature of molten steel and preparation method thereof |
-
2015
- 2015-05-27 CN CN201510278402.2A patent/CN104988348A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3194657A (en) * | 1963-03-13 | 1965-07-13 | Int Nickel Co | Process for making workable ruthenium and product thereof |
| US3357825A (en) * | 1965-01-11 | 1967-12-12 | Nat Res Corp | Production of metals |
| CN101561322A (en) * | 2009-05-18 | 2009-10-21 | 无锡英特派金属制品有限公司 | Dispersion strengthening platinum/rhodium13-platinum thermocouple wires and production method thereof |
| CN103715111A (en) * | 2012-10-03 | 2014-04-09 | 田中电子工业株式会社 | Copper-platinum alloy wire for connecting in semiconductor apparatus |
| CN103952584A (en) * | 2014-05-20 | 2014-07-30 | 重庆材料研究院有限公司 | Platinum-rhodium thermocouple fine wire material for measuring temperature of molten steel and preparation method thereof |
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Application publication date: 20151021 |