CN104955787B - 发光陶瓷、发光元件及发光器件 - Google Patents

发光陶瓷、发光元件及发光器件 Download PDF

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CN104955787B
CN104955787B CN201480006328.2A CN201480006328A CN104955787B CN 104955787 B CN104955787 B CN 104955787B CN 201480006328 A CN201480006328 A CN 201480006328A CN 104955787 B CN104955787 B CN 104955787B
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light
luminescent ceramic
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wavelength conversion
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CN104955787A (zh
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吴竹悟志
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Murata Manufacturing Co Ltd
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Abstract

本发明提供一种发光的量子产率较高的发光陶瓷。该发光陶瓷通过在还原气氛中对以ABOW(其中,A包含从La、Y、Gd、Yb及Lu构成的组中选择的至少一种元素,B包含从Zr、Sn及Hf构成的组中选择的至少一种元素和Bi,W是用于保持电中性的正数。)所表示的烧绿石型化合物作为主要成分的陶瓷进行热处理而形成。

Description

发光陶瓷、发光元件及发光器件
技术领域
本发明涉及发光陶瓷、发光元件及发光器件。
背景技术
以往,已知有一种发光陶瓷,该发光陶瓷在射入激励光时,射出波长与激励光不同的光。例如专利文献1中,作为该发光陶瓷的一个示例,记载了将以ABOW(其中,A由从La、Y、Gd、Yb及Lu构成的组中选择的至少一种元素与0~5摩尔%的Bi构成,B是从Sn、Zr及Hf构成的组中选择的至少一种元素,W是用于保持电中性的正数。)所表示的烧绿石型化合物作为主要成分的陶瓷在还原气氛中进行热处理而形成的发光陶瓷。
现有技术文献
专利文献
专利文献1:WO2011/158580A1号公报
发明内容
发明所要解决的技术问题
对于发光陶瓷,存在希望提高发光的量子效率的要求。
本发明的主要目的在于,提供一种发光的量子产率较高的发光陶瓷。
解决技术问题所采用的技术手段
本发明所涉及的发光陶瓷通过在还原气氛中对以ABOW(其中,A包含从La、Y、Gd、Yb及Lu构成的组中选择的至少一种元素,B包含从Zr、Sn及Hf构成的组中选择的至少一种元素和Bi,W是用于保持电中性的正数。)所表示的烧绿石型化合物作为主要成分的陶瓷进行热处理而形成。
本发明所涉及的发光陶瓷的某个特定的方面中,B包含0.001摩尔%~5摩尔%范围的Bi。
本发明所涉及的发光陶瓷的其他特定的方面中,厚度为1mm时,波长450nm~800nm的光透过率为50%以上。
本发明所涉及的发光陶瓷的其他特定的方面中,照射激励光时获得的发光量子产率为40%以上。
本发明所涉及的发光陶瓷的另一其他特定的方面中,A不包含Bi。
本发明所涉及的发光元件包括波长变换部。波长变换部包含本发明所涉及的发光陶瓷。
本发明所涉及的发光元件的某个特定的方面中,发光元件还包括发光波长与波长变换部的发光波长不同的其他的波长变换部。
本发明所涉及的发光元件的其他特定的方面中,其他的波长变换部包含本发明所涉及的发光陶瓷。
本发明所涉及的发光器件包括本发明所涉及的发光元件以及光源。光源对发光元件照射发光元件的激励光。
发明效果
根据本发明,能提供一种发光的量子产率较高的发光陶瓷。
附图说明
图1是实施方式1中的发光器件的示意性侧视图。
图2是实施方式2中的发光器件的示意性侧视图。
图3是实施方式3中的发光器件的简要剖视图。
图4是实施方式4中的发光器件的简要剖视图。
图5是实施方式5中的发光器件的简要剖视图。
图6是实施方式6中的发光器件的简要剖视图。
图7是表示与组成8相对应的样品的XRD分析结果的曲线图。
图8是样品2、8的Bi的L3端的XANES光谱。
图9是通过样品2、8的EXAFS光谱获得的径向分布函数。
图10是实验例2中制作得到的评价样品、实验例1中制作得到的具有组成8的热处理后的样品、具有组成2的热处理后的样品各自的发光光谱。
具体实施方式
下面,对实施本发明的优选方式的一个示例进行说明。然而,下述实施方式仅仅是例示。本发明不限于下述任一实施方式。
此外,在实施方式等所参照的各附图中,以相同的标号来参照实质上具有相同功能的构件。另外,实施方式等中参照的附图是示意性的记载。附图中绘制的物体的尺寸比例等有时与现实物体的尺寸比例等不同。附图相互间的物体的尺寸比例等也可能不同。具体的物体的尺寸比例等应当参考以下的说明来判断。
(实施方式1)
图1是实施方式1中的发光器件的示意性侧视图。如图1所示,发光器件1包括光源30和发光元件11。本实施方式中,发光元件11由一个波长变换部11a构成。波长变换部11a包含发光陶瓷。发光陶瓷在射入激励光L1时射出荧光L2。因此,若激励光L1入射到波长变换部11a,则从波长变换部11a射出荧光L2。光源30对发光元件11的波长变换部11a照射激励光L1。光源30能由例如LED(Light Emitting Diode:发光二极管)、激光光源等构成。
波长变换部11a所包含的发光陶瓷通过在还原气氛中对以ABOW(其中,A包含从La、Y、Gd、Yb及Lu构成的组中选择的至少一种元素,B包含从Zr、Sn及Hf构成的组中选择的至少一种元素和Bi,W是用于保持电中性的正数。)所表示的烧绿石型化合物作为主要成分的陶瓷进行热处理而形成。因此,与例如专利文献1所记载的那样的在还原气氛中对以在A位包含Bi,在B位不包含Bi的烧绿石型化合物作为主要成分的陶瓷进行热处理而形成的发光陶瓷相比,能获得较高的发光的量子产率。
从获得更高的发光的量子产率的观点出发,B优选包含0.001摩尔%~5摩尔%范围的Bi,更优选包含0.01摩尔%~3摩尔%范围的Bi,进一步优选包含0.05摩尔%~1摩尔%的范围的Bi。对于发光陶瓷,在厚度为1mm时的波长450nm~800nm的光透过率优选为50%以上,光透过率更优选为60%以上,光透过率进一步优选为70%以上。A优选为不包含Bi。对于发光陶瓷,对发光陶瓷照射激励光时所获得的发光量子产率优选为40%以上,发光量子产率更优选为50%以上,发光量子产率进一步优选为60%以上。
在以ABOW所表示的烧绿石型化合物作为主要成分的陶瓷中,A可以由从La、Y、Gd、Yb及Lu构成的组中选择的至少一种元素形成,B可以由从Zr、Sn及Hf构成的组中选择的至少一种元素和Bi形成。A优选为包含La。B优选为包含Zr。作为以ABOW所表示的烧绿石型化合物作为主要成分的陶瓷,优选使用La(Zr(1-x)Bix)OW。La(ZrxBi(1-x))OW中,x优选为0.0001~0.01,更优选为0.0005~0.005。
为了获得以A位由Bi置换后的ABOW所表示的烧绿石型化合物作为主要成分的陶瓷,例如,作为Bi源优选使用Bi2O3。另一方面,为了获得以B位由Bi置换后的ABOW所表示的烧绿石型化合物作为主要成分的陶瓷,例如,作为Bi源优选使用NaBiO3。由此,通过例如适当选择Bi源,能控制将Bi导入至A位还是导入至B位。
另外,波长变换部11a可以包含多种陶瓷。
以ABOW表示的陶瓷除了A、B、O成分以外,可以包含不可避免地混入的杂质(以下作为“不可避免杂质”)。作为不可避免杂质的具体例,可举出SiO2、B2O3、Al2O3
下面,对于本发明的优选实施方式的其他示例进行说明。以下的说明中,用共同的标号参照具有与上述实施方式1实质上共通的功能的构件,并省略说明。
(实施方式2)
图2是实施方式2中的发光器件的示意性侧视图。图2所示的发光器件1a中,发光元件11具有波长变换部11a和另一波长变换部11b。即,发光元件11具有多个波长变换部11a、11b。
波长变换部11b包含与波长变换部11a所包含的发光陶瓷不同的发光陶瓷,因此波长变换部11a和波长变换部11b的发光波长不同。因此,利用发光器件1a,能获得宽频带的发光。例如,能获得白色的发光。另外,波长变换部11a的激励波长和波长变换部11b的激励波长可以相同,也可以不同。波长变换部11a和波长变换部11b的至少一方包含多种发光陶瓷,同种发光陶瓷可以包含在波长变换部11a和波长变换部11b的双方中。
从获得较高的发光量子产率的观点出发,波长变换部11b所包含的发光陶瓷也通过在还原气氛中对以ABOW(其中,A包含从La、Y、Gd、Yb及Lu构成的组中选择的至少一种元素,B包含从Zr、Sn及Hf构成的组中选择的至少一种元素和Bi,W是用于保持电中性的正数。)所表示的烧绿石型化合物作为主要成分的陶瓷进行热处理而形成。
此外,将以ABOW(其中,A包含从La、Y、Gd、Yb及Lu构成的组中选择的至少一种元素,B包含从Zr、Sn及Hf构成的组中选择的至少一种元素和Bi,W是用于保持电中性的正数。)所表示的烧绿石型化合物作为主要成分的陶瓷在还原气氛中进行热处理而形成发光陶瓷与例如Ce:YAG荧光体等代表性的白色LED用荧光体相比,产生较宽波长频带的发光。因此,通过使波长变换部11a、11b的至少一方含有在还原气氛中对以ABOW所表示的烧绿石型化合物作为主要成分的陶瓷进行热处理而形成的发光陶瓷,易于获得更宽频带的发光。
(实施方式3~6)
图3~图6示出具体的发光器件的结构例。
图3所示的发光器件1c中,在基板12上设有光源30。此外,基板12上设有反射镜13。反射镜13设有贯通孔13a,光源30配置于贯通孔13a内。利用反射镜13将发光元件11支承为与光源30相隔离。如发光器件1c那样,通过设置反射镜13,能提高从光源30射出的激励光射入发光元件11的入射效率。并且,也能提高来自发光元件11的发光的出射效率。从进一步提高入射效率的观点出发,可以将发光元件11的光源30侧的表面的至少一部分加工成透镜形状、蛾眼结构。从进一步提高出射效率的观点出发,可以将与发光元件11的光源30侧的相反侧的表面的至少一部分加工成透镜形状、蛾眼结构。
图4所示的发光器件1d中,发光元件11和光源30经由外延片14相连接。发光元件11和外延片14可以例如利用粘接剂相粘结,也可以通过热扩散相接合。外延片14能例如由蓝宝石、碳化硅、硅、氮化铝、氮化镓等构成。
发光器件1d中,光源30由将阳极电极31、p型层32、发光层33、及n型层34以该顺序层叠而成的层叠体构成。p型层32与阳极电极31电连接。n型层34与阴极电极35电连接。
图5所示的发光器件1e中,发光元件11和光源30不经由外延片14而直接连接。
图6所示的发光器件1f中,与发光器件1c不同,发光元件11和光源30设置为相接触。
(实验例1)
首先,作为原料,准备高纯度的La(OH)3、Gd2O3、Y2O3、Yb2O3、ZrO2、HfO2、SnO2、Bi2O3、NaBiO3。对这些原料进行称量,使其成为下述表1所示的组成1~40,并利用球磨机进行20小时的湿式混合。此处,对于作为贫A位(A site poor)的组成1、2、11、16、21、26、31(标注有“*”的组成),使用Bi2O3作为Bi原料,除此以外的组成中使用NaBiO3。在使获得的混合物干燥后,在1300℃下进行3小时的预烧,从而获得预烧物。将该预烧物与水、有机分散剂、有机粘合剂一起放入球磨机中,进行12小时的湿式粉碎。接着,使用获得的粉碎物,通过湿式成形,获得直径为30mm、厚度为5mm的圆板状成形体。将该成形体埋设于具有和成形体实质相同的组成的粉体中,在氧气气氛下(约98%的氧浓度),以1700℃的温度进行20小时的烧成,从而获得烧结体。对所获得的烧结体的两面进行镜面研磨,以成为厚度为1.0mm的基板。之后,将基板一分为二,对于其中一个不实施热处理,对于另一个,在N2/H2/H2O混合气体的还原气氛(氧分压:1×10-13MPa)中实施热处理。将热处理的最高温度设为1000℃,将1000℃下的保持时间设为3小时。
[表1]
图7示出了表示与组成8相对应的样品(以下作为“样品8”)的XRD分析结果的曲线图。根据图7的衍射图案可知,所获得的陶瓷是具有由La2Zr2O7构成的烧绿石结构的单相的陶瓷。对样品8进行发光分光分析,其主要成分仅为La、Zr、Bi。
接着,对于利用贫A位的组成制作得到的与组成2相对应的样品(以下作为“样品2”)和利用贫B位的组成制作得到样品8,将具有组成2的预烧物用作为组成的基准来进行XRF组成分析。其结果如表2所示。
[表2]
La Zr Bi
样品2 0.995 1.000 0.008
样品8 1.000 0.992 0.007
根据表2所示的结果确认到可获得大致符合目标组成的烧结体。
接着,为了对添加的Bi的化合价(valence)、置换位进行调查,分别对样品2及样品8进行X射线吸收精细结构(XAFS)光谱分析。利用高能加速器研究机构的放射光科学研究设施来进行分析。图8中示出了Bi的L3端的XANES光谱。图9示出了通过EXAFS光谱获得的径向分布函数。在图8及图9中,标注“热处理前”的是没有实施热处理的样品数据,未标注“热处理前”的是实施了热处理的样品数据。
根据图8所示的结果可知,样品2和样品8的吸收的上升形状不同。样品2的光谱形状与Bi2O3的光谱形状相近,样品8的光谱形状与NaBiO3的光谱形状相近。
根据图9所示的结果可观察到样品2和样品8中的径向分布函数的形状也不同,且可知样品2的Bi的径向分布函数的形状与作为A位离子的La的径向分布函数的形状相近,样品8的Bi的径向分布函数的形状与作为B位离子的Zr的径向分布函数的形状相近。
根据这些结果可知,样品2中,Bi被导入至A位,样品8中,Bi被导入至B位。
此外,根据图8及图9的结果可知,通过实施热处理,XANES光谱及径向分布函数的形状发生变化。由此,认为通过热处理,会发生Bi离子的向低化合价侧变化的化合价变化,以及产生B离子周围的局部结构的变化等。
(直线透过率测定)
对于具有组成1~40并实施了热处理的样品,利用岛津制作所公司生产的紫外可见分光光度计UV-2500PC,进行可视光区域内的直线透过率的测定。在表1中示出波长700nm下的结果。
(发光量子产率测定)
利用浜松光子学有限公司生产的绝对PL量子产率测定装置(C9920-02)测定具有组成1~40的样品在进行波长340nm的紫外线照射时的发光量子产率。另外,对于各组成,对没有实施热处理的样品和实施了热处理的样品双方测定发光量子产率。表1示出了其结果。
根据表1所示的结构可知,没有实施热处理的样品在组成1~40的任一种下均基本不发光。另一方面,实施了热处理的样品在组成1~40的任一种下均可发光。然而,具有将Bi导入至A位的组成1、2、11、16、21、26、31的样品的发光量子产率较低。可知对于具有将Bi导入至B位的其他组成的样品,即使Bi的添加量相同,也示出了比具有将Bi导入至A位的组成1、2、11、16、21、26、31的样品要高的发光量子产率。
(实验例2)
将表1所示的组成8和组成34的预烧物分别与水、有机分散剂及有机粘合剂一起放入球磨机中,进行12小时的湿式粉碎。使用该粉碎物,对厚度60μm的生片进行成形。将获得的生片切割成边长10mm的正方形,重叠15片切割得到的生片并以2t/cm2的压力进行加压,从而获得边长10mm的正方形、厚度约为0.8mm的层叠成形体。
接着,将具有组成8的层叠成形体和具有组成34的层叠成形体重叠并以2t/cm2的压力进行加压,从而获得边长10mm、厚度约为1.5mm的层叠成形体。将获得的层叠成形体在氧气气氛下(约98%氧浓度)、以1700℃的温度进行20小时的烧成,从而获得烧结体。将获得的烧结体在N2/H2/H2O混合气体还原气氛下(氧分压:1×10-13MPa)、以1000℃的温度进行3小时的热处理。接着,将获得的还原热处理后的烧结体完成为厚度1.0mm的两面镜面基板,从而获得评价样品。另外,厚度加工时,从烧结体的两侧磨削均等的量。制作得到的评价样品是图2所示的发光元件11,与波长变换部11a具有组成8、波长变换部11b具有组成34的发光元件实质上相同。
对于实验例2中制作得到的评价样品、实验例1中制作得到的具有组成8的热处理后的样品、具有组成34的热处理后的样品,分别利用浜松光子学有限公司生产的多信道分光器(PMA-12),进行照射波长360nm的紫外线时的荧光分光测定。将结果示于图10。
根据图10所示的结果可知,从实验例2中制作得到的评价样品可获得宽频带的发光。表3中示出了实验例2中制作得到的评价样品的相关色温(K)、duv值、平均显色评价指数Ra、特殊显色评价指数R9~R15。此处,“相关色温”表示在CIE1960uv色度图中,位于距离发光的色度坐标最近位置的黑体辐射轨道上的点的黑体的温度,“duv”表示它们的距离。“显色评价指数”是以指数表示怎样忠实地再现了照射基准光源时获得的物体的色彩,判断为越接近100显色性越好。另外,“平均显色评价指数”是JISZ8726所规定的试验色No.1~No.8的显色评价指数的平均值。“特殊显色评价指数”表示试验色No.9~No.15的显色评价指数。
[表3]
根据表3所示的结果可知,实验例2中制作得到的评价样品的大多数的显色评价指数在95以上,可获得显色性极其优异的白色光。
标号说明
1、1a~1f 发光器件
11 发光元件
11a、11b 波长变换部
12 基板
13 反射镜
13a 贯通孔
14 外延片
30 光源
31 阳极电极
32 p型层
33 发光层
34 n型层
35 阴极电极

Claims (10)

1.一种发光陶瓷,其特征在于,
该发光陶瓷通过在还原气氛中对以ABOW所表示的烧绿石型化合物作为主要成分的陶瓷进行热处理而形成,其中,A包含从La、Y、Gd、Yb及Lu构成的组中选择的至少一种元素,B包含从Zr、Sn及Hf构成的组中选择的至少一种元素和Bi,W是用于保持电中性的正数,所述B包含0.001摩尔%~5摩尔%范围的Bi。
2.如权利要求1所述的发光陶瓷,其特征在于,
所述B包含0.01摩尔%~3摩尔%范围的Bi。
3.如权利要求1或2所述的发光陶瓷,其特征在于,
厚度为1mm时,波长450nm~800nm的光透过率为50%以上。
4.如权利要求1或2所述的发光陶瓷,其特征在于,
照射激励光时获得的发光量子产率为40%以上。
5.如权利要求1或2所述的发光陶瓷,其特征在于,
所述A不包含Bi。
6.如权利要求1或2所述的发光陶瓷,其特征在于,
与所述A包含所述Bi的情况相比,照射激励光时获得的发光量子产率较高。
7.一种发光元件,其特征在于,
包括波长变换部,该波长变换部包含权利要求1至5的任一项所述的发光陶瓷。
8.如权利要求7所述的发光元件,其特征在于,
还包括发光波长与所述波长变换部的发光波长不同的其他的波长变换部。
9.如权利要求8所述的发光元件,其特征在于,
所述其他的波长变换部包含所述权利要求1至5的任一项所述的发光陶瓷。
10.一种发光器件,其特征在于,包括:
权利要求7至9的任一项所述的发光元件;以及
对所述发光元件照射激励光的光源。
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