CN104952872A - Single-chip integrated circuit - Google Patents
Single-chip integrated circuit Download PDFInfo
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- CN104952872A CN104952872A CN201510244422.8A CN201510244422A CN104952872A CN 104952872 A CN104952872 A CN 104952872A CN 201510244422 A CN201510244422 A CN 201510244422A CN 104952872 A CN104952872 A CN 104952872A
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- field effect
- oxide semiconductor
- metal oxide
- semiconductor field
- effect tube
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Abstract
The invention relates to a single-chip integrated circuit which comprises a device body. A terminal ring structure wraps the periphery of the device body. A metal electrode is fixed at the bottom end of the device body. The device body comprises a first metal oxide semiconductor field effect tube, a second metal oxide semiconductor field effect tube and a diode, wherein the first metal oxide semiconductor field effect tube and the second metal oxide semiconductor field effect tube are parallel, the diode is integrated in the first metal oxide semiconductor field effect tube or the second metal oxide semiconductor field effect tube, and the first metal oxide semiconductor field effect tube and the second metal oxide semiconductor field effect tube are connected with the metal electrode. By the single-chip integrated circuit, encapsulation cost can be lowered, and circuit stability and reliability can be increased.
Description
Technical field
The present invention relates to technical field of semiconductor device, particularly a kind of circuit of single-chip integrated.
Background technology
VDMOS (metal oxide semiconductor field effect tube) is exhausted inside traditional circuit, enhancement mode VDMOS and Diode (diode) is independent or partly integrated, then by the realizing circuit function that is packaged together, such device and packaging cost higher, three kinds of individual devices carry out realizing circuit function by the method for multi-chip package, although multi-chip package technically can realize, employing multi-chip package technical costs will far above the cost adopting Single-Chip Integration.And the less stable of multi-chip package, process complexity is higher, and cost performance is lower.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of circuit of single-chip integrated that can reduce packaging cost, improve circuit stability and reliability.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of circuit of single-chip integrated, comprises device body, and the periphery of described device body is enclosed with end ring structure, and the bottom of described device body is fixed with metal electrode;
Described device body comprises the first metal oxide semiconductor field effect tube, the second metal oxide semiconductor field effect tube and diode, described first metal oxide semiconductor field effect tube and described second metal oxide semiconductor field effect tube laid out in parallel, described diode is integrated on described first metal oxide semiconductor field effect tube, and described first metal oxide semiconductor field effect tube is all connected with described metal electrode with described second metal oxide semiconductor field effect tube.
Further, the drain D of described first metal oxide semiconductor field effect tube and the drain D of described second metal oxide semiconductor field effect tube by connection to the lower end of described metal electrode.
Further, the source terminal of described second metal oxide semiconductor field effect tube and grid terminal are all placed in the top of described second metal oxide semiconductor field effect tube.
Further, the source S of described first metal oxide semiconductor field effect tube and grid G are by connection to the positive pole of described diode, and the negative terminals of described diode is placed in the top of described first metal oxide semiconductor field effect tube.
Further, described first metal oxide semiconductor field effect tube is depletion MOS's field effect transistor.
Further, described second metal oxide semiconductor field effect tube is enhancement MOSFET.
The invention has the beneficial effects as follows: by by the first metal oxide semiconductor field effect tube, the second metal oxide semiconductor field effect tube and diode package in one chip, can effectively saving components and packaging cost, and circuit stability and reliability are provided.
Accompanying drawing explanation
Fig. 1 is the front view of the device of a kind of circuit of single-chip integrated of the present invention;
Fig. 2 is the AA cutaway view of Fig. 1;
Fig. 3 is the circuit theory diagrams of the device of a kind of circuit of single-chip integrated of the present invention.
In accompanying drawing, the list of parts representated by each label is as follows:
1, device body, 2, end ring structure, 3, metal electrode, the 4, first metal oxide semiconductor field effect tube, the 5, second metal oxide semiconductor field effect tube, 6, source terminal, 7, grid terminal, 8, negative terminals.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1 to Figure 3, a kind of circuit of single-chip integrated, comprises device body 1, and the periphery of described device body 1 is enclosed with end ring structure 2, and the bottom of described device body 1 is fixed with metal electrode 3;
Described device body 1 comprises the first metal oxide semiconductor field effect tube 4, second metal oxide semiconductor field effect tube 5 and diode, described first metal oxide semiconductor field effect tube 4 is placed in described second metal oxide semiconductor field effect tube 5 laid out in parallel, described diode is integrated on described first metal oxide semiconductor field effect tube 4, and described first metal oxide semiconductor field effect tube 4 is all connected with described metal electrode 3 with described second metal oxide semiconductor field effect tube 5.
The drain D of described first metal oxide semiconductor field effect tube 4 and the drain D of described second metal oxide semiconductor field effect tube 5 by connection to the lower end of described metal electrode 3.
The source terminal 6 of described second metal oxide semiconductor field effect tube 5 and grid terminal 7 are all placed in the top of described second metal oxide semiconductor field effect tube 5.
The source S of described first metal oxide semiconductor field effect tube 4 and grid G are by connection to the positive pole of described diode, and the negative terminals 8 of described diode is placed in the top of described first metal oxide semiconductor field effect tube 4.
Described first metal oxide semiconductor field effect tube 4 is depletion MOS's field effect transistor.
Described second metal oxide semiconductor field effect tube 5 is enhancement MOSFET.
By by the first metal oxide semiconductor field effect tube 4, second metal oxide semiconductor field effect tube 5 and diode package in one chip, can effectively saving components and packaging cost, and circuit stability and reliability are provided.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a circuit of single-chip integrated, comprise device body (1), it is characterized in that: the periphery of described device body (1) is enclosed with end ring structure (2), the bottom of described device body (1) is fixed with metal electrode (3);
Described device body (1) comprises the first metal oxide semiconductor field effect tube (4), second metal oxide semiconductor field effect tube (5) and diode, described first metal oxide semiconductor field effect tube (4) is placed in described second metal oxide semiconductor field effect tube (5) laid out in parallel, described diode is integrated on described first metal oxide semiconductor field effect tube (4), described first metal oxide semiconductor field effect tube (4) is all connected with described metal electrode (3) with described second metal oxide semiconductor field effect tube (5).
2. a kind of circuit of single-chip integrated according to claim 1, is characterized in that: the drain D of described first metal oxide semiconductor field effect tube (4) and the drain D of described second metal oxide semiconductor field effect tube (5) by connection to the lower end of described metal electrode (3).
3. a kind of circuit of single-chip integrated according to claim 1 or 2, is characterized in that: the source terminal (6) of described second metal oxide semiconductor field effect tube (5) and grid terminal (7) are all placed in the top of described second metal oxide semiconductor field effect tube (5).
4. a kind of circuit of single-chip integrated according to claim 3, it is characterized in that: the source S of described first metal oxide semiconductor field effect tube (4) and grid G are by connection to the positive pole of described diode, and the negative terminals (8) of described diode is placed in the top of described first metal oxide semiconductor field effect tube (4).
5. a kind of circuit of single-chip integrated according to claim 4, is characterized in that: described first metal oxide semiconductor field effect tube (4) is depletion MOS's field effect transistor.
6. a kind of circuit of single-chip integrated according to claim 4, is characterized in that: described second metal oxide semiconductor field effect tube (5) is enhancement MOSFET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510244422.8A CN104952872A (en) | 2015-05-13 | 2015-05-13 | Single-chip integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510244422.8A CN104952872A (en) | 2015-05-13 | 2015-05-13 | Single-chip integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104952872A true CN104952872A (en) | 2015-09-30 |
Family
ID=54167417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510244422.8A Pending CN104952872A (en) | 2015-05-13 | 2015-05-13 | Single-chip integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104952872A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0044066A2 (en) * | 1980-07-16 | 1982-01-20 | Siemens Aktiengesellschaft | Driver stage in MOS integrated circuit technology with large output signal ratio |
| JPH03272221A (en) * | 1990-03-20 | 1991-12-03 | Fujitsu Ltd | Chemical compound semiconductor integrated circuit |
| JPH07264043A (en) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | Semiconductor integrated circuit device |
| JPH0879034A (en) * | 1994-08-18 | 1996-03-22 | Siemens Ag | Driving circuit device of semiconductor device for electric power |
| CN101924482A (en) * | 2009-05-28 | 2010-12-22 | 成都芯源系统有限公司 | Power integrated circuit for power converter and manufacturing method |
| CN102394237A (en) * | 2011-12-06 | 2012-03-28 | 电子科技大学 | Composite VDMOS device possessing temperature sampling and over-temperature protection function |
| CN103367361A (en) * | 2012-03-26 | 2013-10-23 | 英飞凌科技奥地利有限公司 | Semiconductor arrangement with a power transistor and a high voltage device |
| CN103928464A (en) * | 2014-04-18 | 2014-07-16 | 杭州士兰微电子股份有限公司 | Composite device and switching power supply |
| CN106614633A (en) * | 2016-12-11 | 2017-05-10 | 广东中迅农科股份有限公司 | Weeding composition |
-
2015
- 2015-05-13 CN CN201510244422.8A patent/CN104952872A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0044066A2 (en) * | 1980-07-16 | 1982-01-20 | Siemens Aktiengesellschaft | Driver stage in MOS integrated circuit technology with large output signal ratio |
| JPH03272221A (en) * | 1990-03-20 | 1991-12-03 | Fujitsu Ltd | Chemical compound semiconductor integrated circuit |
| JPH07264043A (en) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | Semiconductor integrated circuit device |
| JPH0879034A (en) * | 1994-08-18 | 1996-03-22 | Siemens Ag | Driving circuit device of semiconductor device for electric power |
| CN101924482A (en) * | 2009-05-28 | 2010-12-22 | 成都芯源系统有限公司 | Power integrated circuit for power converter and manufacturing method |
| CN102394237A (en) * | 2011-12-06 | 2012-03-28 | 电子科技大学 | Composite VDMOS device possessing temperature sampling and over-temperature protection function |
| CN103367361A (en) * | 2012-03-26 | 2013-10-23 | 英飞凌科技奥地利有限公司 | Semiconductor arrangement with a power transistor and a high voltage device |
| CN103928464A (en) * | 2014-04-18 | 2014-07-16 | 杭州士兰微电子股份有限公司 | Composite device and switching power supply |
| CN106614633A (en) * | 2016-12-11 | 2017-05-10 | 广东中迅农科股份有限公司 | Weeding composition |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150930 |