CN212542436U - Packaging structure of cascode GaN field effect transistor - Google Patents
Packaging structure of cascode GaN field effect transistor Download PDFInfo
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- CN212542436U CN212542436U CN202021334329.9U CN202021334329U CN212542436U CN 212542436 U CN212542436 U CN 212542436U CN 202021334329 U CN202021334329 U CN 202021334329U CN 212542436 U CN212542436 U CN 212542436U
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- field effect
- effect transistor
- lead frame
- drain
- gan field
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Abstract
A package structure of cascode GaN field effect transistor includes a lead frame, on which a GaN field effect transistor and a metal oxide semiconductor are directly disposed. The GaN field effect transistor includes a first substrate directly disposed on the lead frame, the first substrate having a first drain, a first gate and a first source on a surface side thereof, wherein the first drain and the first gate are electrically connected to the lead frame, respectively. The metal oxide semiconductor comprises a second substrate directly arranged on the lead frame, wherein the surface side of the second substrate is provided with a second drain electrode, a second grid electrode and a second source electrode, the second drain electrode is directly electrically connected with the first source electrode, and the second grid electrode and the second source electrode are respectively electrically connected with the lead frame. The utility model uses the horizontal semiconductor to electrically connect the drain electrode of the semiconductor with the source electrode of the gallium nitride transistor, thereby simplifying the structure.
Description
Technical Field
The present invention relates to semiconductor transistors, and more particularly, to a cascode GaN field effect transistor package structure.
Background
FIG. 2 shows a conventional package structure of a cascode GaN field effect transistor, which includes a lead frame 5, and a vertical metal oxide semiconductor 7 and a GaN field effect transistor 6 are disposed on the lead frame 5. The GaN field effect transistor 6 has a drain 61, a gate 62 and a source 63, and the metal oxide semiconductor 7 has a drain 71, a gate 72 and a source 73, wherein the drain 71 of the vertical metal oxide semiconductor 7 is located at the bottom, and in order to connect electrically with the source 63 of the GaN field effect transistor 6, a metal plating film 81 with a larger area is disposed under the drain 71 of the semiconductor 7, and an insulating ceramic substrate 82 is further disposed on the lead frame 5 to separate the metal plating film 81 from the lead frame 5. Therefore, the structure and process of the conventional cascode GaN field effect transistor are complicated, and the cost is high.
SUMMERY OF THE UTILITY MODEL
The present invention is directed to a cascode gan field effect transistor package structure, which uses a horizontal semiconductor to electrically connect the drain of the semiconductor to the source of the gan transistor, thereby simplifying the structure.
To achieve the aforesaid objective, the present invention provides a package structure of a cascode gan field effect transistor, which comprises:
a lead frame;
a GaN field effect transistor including a first substrate directly disposed on the lead frame, the first substrate having a first drain, a first gate and a first source on a surface thereof, wherein the first drain and the first gate are electrically connected to the lead frame respectively;
and the metal oxide semiconductor comprises a second substrate directly arranged on the lead frame, wherein the surface side of the second substrate is provided with a second drain electrode, a second grid electrode and a second source electrode, the second drain electrode is directly electrically connected with the first source electrode, and the second grid electrode and the second source electrode are respectively electrically connected with the lead frame.
In one embodiment, the leadframe, the GaN field effect transistor, and the MOS are encapsulated by a package.
Preferably, the lead frame is provided with a pin extending out of the package body.
The utility model has the advantages that:
the utility model provides a cascode gallium nitride field effect transistor's packaging structure, it uses horizontal semiconductor, makes the direct electric connection of drain electrode of semiconductor and gallium nitride transistor's source electrode, has the efficiency of simplified structure.
Drawings
FIG. 1 is a schematic view of the present invention;
FIG. 2 is a schematic structural diagram of a conventional structure.
Detailed Description
Referring to fig. 1, a package structure of a cascode GaN field effect transistor according to the present invention is shown, which includes a lead frame 1, a GaN field effect transistor 2(GaN FET) and a horizontal metal oxide semiconductor 3(MOS) are directly disposed on the lead frame 1, wherein the GaN field effect transistor 2 has a first base 21 directly connected to the lead frame 1, a first drain 22, a first gate 23 and a first source 24 are disposed on a surface side of the first base 21, and the first drain 22 and the first gate 23 are electrically connected to the lead frame 1 respectively; the metal oxide semiconductor 3 has a second substrate 31 directly bonded to the leadframe 1, a second drain 32, a second gate 33 and a second source 34 are disposed on a surface of the second substrate 31, and the second gate 33 and the second source 34 are electrically connected to the leadframe 1 respectively.
Accordingly, the first source 24 of the gan field effect transistor 2 is directly electrically connected to the second drain 32 of the mos 3 to form a cascode configuration. Then, a package 4 is used to encapsulate the lead frame 1, the GaN field effect transistor 2 and the metal oxide semiconductor 3, and a lead 11 extending out of the package 4 is extended from the lead frame 1.
With the above structure, the present invention electrically connects the first source 24 of the GaN field effect transistor 2 and the second drain 32 of the metal oxide semiconductor 3 directly, thereby omitting the structure of the metal coating and the ceramic substrate in the conventional transistor, achieving the purpose of simplifying the structure and the manufacturing process, and further reducing the cost.
The above description is the preferred embodiment of the present invention and the technical principle applied by the same, and for those skilled in the art, without departing from the spirit and scope of the present invention, any obvious changes such as equivalent transformation, simple replacement, etc. based on the technical solution of the present invention all belong to the protection scope of the present invention.
Claims (3)
1. A package structure of a cascode GaN field effect transistor, comprising:
a lead frame;
a GaN field effect transistor including a first substrate directly disposed on the lead frame, the first substrate having a first drain, a first gate and a first source on a surface thereof, wherein the first drain and the first gate are electrically connected to the lead frame respectively;
and the metal oxide semiconductor comprises a second substrate directly arranged on the lead frame, wherein the surface side of the second substrate is provided with a second drain electrode, a second grid electrode and a second source electrode, the second drain electrode is directly electrically connected with the first source electrode, and the second grid electrode and the second source electrode are respectively electrically connected with the lead frame.
2. The cascode GaN field effect transistor package structure of claim 1, wherein the leadframe, the GaN field effect transistor and the metal oxide semiconductor are encapsulated by a package body.
3. The package of cascode GaN field effect transistor as claimed in claim 2, wherein the lead frame is provided with a pin extending outside the package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021334329.9U CN212542436U (en) | 2020-07-09 | 2020-07-09 | Packaging structure of cascode GaN field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021334329.9U CN212542436U (en) | 2020-07-09 | 2020-07-09 | Packaging structure of cascode GaN field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212542436U true CN212542436U (en) | 2021-02-12 |
Family
ID=74522361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021334329.9U Active CN212542436U (en) | 2020-07-09 | 2020-07-09 | Packaging structure of cascode GaN field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212542436U (en) |
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2020
- 2020-07-09 CN CN202021334329.9U patent/CN212542436U/en active Active
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