CN104932204A - Obtaining method of photo-etching machine exposure parameters - Google Patents

Abstract

The invention provides an obtaining method of photo-etching machine exposure parameters. The obtaining method comprises the following steps: analyzing a received parameter input command to obtain a first expected step length in the horizontal direction and a second expected step length in the vertical direction on a silicon chip; and calculating the exposure parameters of a corresponding photo-etching machine according to the first expected step length and second expected step length. Through the provided technical scheme, the exposure parameters of a photo-etching machine can be calculated according to the actual photo-etching needs on various complicated photo-etching editions (masks); a universal and precise exposure parameter calculation formula is provided, and the calculation of exposure parameters is simplified.

Description

The acquisition methods of photo-etching machine exposal parameter

Technical field

The present invention relates to technical field of lithography, in particular to a kind of acquisition methods of photo-etching machine exposal parameter.

Background technology

Be illustrated in figure 1 the schematic diagram of lithographic processes, wherein, the figure in reticle 102, after the exposure-processed of litho machine 104, is displayed on silicon chip 106.Because semicon industry (and other are if LED, photovoltaic cell, LCD, PCB etc. are about the manufacture field of photoetching process) adopts planar light carving technology, successively operation from level to level, operation just may find the mistake of the first level later to the second layer, thus the parameter of exposure program calculates most important, and requirement can not go out any mistake, otherwise will directly cause scrapping of product.

Litho machine itself can only support a kind of exposure operation mode, namely to the simple exposure of the reticle of single edition form; In practice process, by constantly groping in industry, find a kind of setting passed through exposure parameter gradually, litho machine is still worked in mode originally, but can support as complex light is cut blocks for printing and the Exposure mode of particular design, such as flower arrangement design etc.

But due to various exposure status numerous and complicated, make the setting for exposure parameter in correlation technique, in a kind of situation, the experience mainly based on technician is arranged, and the requirement for technician is higher; In another kind of situation, be then need exploration repeatedly, practice, easily cause large number quipments, material, artificial waste, and inefficiency, effect differ.

Therefore, how to propose a kind of general, simple exposure parameter set-up mode, make to increase work efficiency and calculate accuracy, become the technical matters that industry is urgently to be resolved hurrily at present.

Summary of the invention

The present invention is just based on the problems referred to above, propose a kind of new technical scheme, according to user for the actual photoetching demand on silicon chip, can calculate that the exposure parameter for litho machine is arranged, thus a kind of general, exposure parameter account form is accurately provided, simplify the computation process of exposure parameter.

In view of this, the present invention proposes a kind of acquisition methods of photo-etching machine exposal parameter, comprising: resolve the parameters input instruction that receives, with to obtain on silicon chip in the horizontal direction first expect stepping length and the second expectation stepping length vertically; Expect that stepping length and described second expects stepping length according to described first, calculate corresponding photo-etching machine exposal parameter.

In this technical scheme, in view of the result of the optimum configurations to reticle and silicon chip, need to embody on silicon chip, thus direct according to technician for the stepping demand on silicon chip, extrapolate the exposure parameter of litho machine, meet user demand and the applied mental of technician on the one hand, on the other hand can calculation exposure parameter exactly, there is no the requirement of experience aspect, do not need repeatedly heuristically to perform lithography operations yet, what contribute to raising parameter arranges efficiency, causes board, material, artificial waste in photoetching process when avoiding exploration to operate.

In technique scheme, preferably, described photo-etching machine exposal parameter comprises: the first order number in the horizontal direction of the exposure area on described silicon chip and the second order number of in the vertical direction.

In this technical scheme, first expects that stepping length and second expects stepping length, corresponding to the length of each exposure area on silicon chip (horizontal direction) and width (vertical direction) situation, which kind of namely in fact reacted technician to wish, with concrete figure (figure in reticle chooses all or silicon chip is transferred in part exposure) and layout (practical layout of the figure on silicon chip), to carry out photoetching treatment to the figure in reticle and silicon chip.Thus, based on the actual size of the step distance desired by technician and silicon chip, the quantity of the exposure area on silicon chip can be determined.Wherein, litho machine operates in units of each exposure area, is created in each exposure area by the graph exposure in reticle.

In technique scheme, preferably, described first order number described second order number wherein, Φ is the diameter length of described reticle, and Px is described first expectation stepping length, and Py is described second expectation stepping length.

In this technical scheme, shape due to silicon chip is that (a flat limit is arranged circle at bottom, be equivalent to clip a part in the bottom of whole circle), make in horizontal/vertical distance, to be less than the first/the second in the region of marginal position and expect stepping length, but will this region as an exposure area.

In technique scheme, preferably, described photo-etching machine exposal parameter comprises: bias compensation value (Map offset) vertically on described silicon chip:

$M=\left\{\begin{array}{c}\mathrm{INT}\left\{\right[\mathrm{INT}\left(\frac{c}{\mathrm{Py}}\right)+0.5]\×\mathrm{Py}-c\},\frac{Y}{2}-\mathrm{INT}\left(\frac{Y}{2}\right)>0;\\ \mathrm{INT}\left\{\right[\mathrm{INT}\left(\frac{c}{\mathrm{Py}}\right)+1]\×\mathrm{Py}-c-2000\},\frac{Y}{2}-\mathrm{INT}\left(\frac{Y}{2}\right)=0\end{array}\right.$

Wherein, for intermediate value, Y is the arrangement number of the in the vertical direction of exposure area on described silicon chip, Py is described second expectation stepping length, Φ is the diameter length of described silicon chip, l is the flat edge lengths in described reticle, h is the Laser Jet height in described reticle, and INT (a) is for being less than or equal to the maximum integer of a.

In this technical scheme, propose in the identical situation of all exposure figures of whole silicon chip surface, for the computing formula of bias compensation value.Wherein, the flat edge of silicon chip is divided and be there is Laser Jet, and h is specially the peak of the laser code stamped and the distance on flat limit.

In above-mentioned arbitrary technical scheme, preferably, also comprise: resolve described parameters input instruction, obtain the true altitude of the resolution chart in the vertical direction in the figure to be exposed in reticle; Expect that stepping length, described second expects stepping length and described true altitude according to described first, calculate described photo-etching machine exposal parameter.

In this technical scheme, under more Exposure mode, all can there is resolution chart and main graph in reticle simultaneously, then need further according to the true altitude of resolution chart, thus realize the accurate calculating of exposure parameter in these cases.

In technique scheme, preferably, described photo-etching machine exposal parameter comprises: bias compensation value (Map offset) vertically in described reticle:

$M=\left\{\begin{array}{c}\mathrm{INT}\left\{\right[\mathrm{INT}\left(\frac{c}{\mathrm{Py}}\right)+0.5]\×\mathrm{Py}-c\},\frac{Y}{2}-\mathrm{INT}\left(\frac{Y}{2}\right)>0;\\ \mathrm{INT}\left\{\right[\mathrm{INT}\left(\frac{c}{\mathrm{Py}}\right)+1]\×\mathrm{Py}-c-2000+f\},\frac{Y}{2}-\mathrm{INT}\left(\frac{Y}{2}\right)=0\end{array}\right.,$

$f=\left\{\begin{array}{cc}\frac{t_1}{2},& t_1>0;\\ 0,& t_1=0\end{array}\right.,$

$c=\frac{\sqrt{{\mathrm{\Φ}}^2-l^2}}{2}-h,$

Wherein, c and f is intermediate value, Y is the arrangement number of the in the vertical direction of exposure area on described silicon chip, Py is described second expectation stepping length, Φ is the diameter length of described silicon chip, and l is the flat edge lengths in described reticle, and h is the Laser Jet height in described reticle, INT (a) for being less than or equal to the maximum integer of a, t ₁for the true altitude of the resolution chart in the vertical direction in the figure to be exposed in described reticle.

Particularly, t ₁for during only to expose the main graph in described figure to be exposed or the main graph exposed in described figure to be exposed and resolution chart without the form of flower arrangement simultaneously, or when exposing all or part of and described resolution chart of described main graph with flower arrangement form, the true altitude of the resolution chart in the vertical direction in described figure to be exposed.

In this technical scheme, propose for silicon chip surface all exposing units figure not necessarily identical (if having not identical, then called after " flower arrangement ") when (situation as " only expose to Main and do not arrange flowers " and " flower arrangement "), for the computing formula of bias compensation value, calculate to realize parameter more accurately.

In technique scheme, preferably, the process calculating described photo-etching machine exposal parameter comprises: set up with the first rectangular coordinate system that the central point of reticle is initial point, described horizontal direction is the first axle, described vertical direction is the second axle; Set up with the second rectangular coordinate system that the central point of silicon chip is initial point, described horizontal direction is the first axle, described vertical direction is the second axle; According to the positional information of the region each to be exposed in the arbitrary full graphics in described reticle in described first rectangular coordinate system and described second rectangular coordinate system, determine described photo-etching machine exposal parameter.

In this technical scheme, reticle can be single edition or compound version, each space of a whole page then in compound version or this single edition are a full graphics (i.e. a frame), by obtaining the positional information in region to be exposed, namely the current pattern needing to be exposed in reticle is determined, and this pattern is relative to the drift condition of the initial point of rectangular coordinate system, thus realize photoetching treatment exactly.

For the lithographic processes of single edition, the present invention proposes following processing mode:

Preferably, described photo-etching machine exposal parameter comprises: shading coordinate and central transformation value; When described reticle only comprising a full graphics, calculate described photo-etching machine exposal parameter in the following manner:

When described full graphics only comprises main graph, the shading coordinate points of this main graph is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=-(Py-b)/2, Yp=(Py+b)/2, and central transformation value is X=0, Y=0;

When described full graphics comprises main graph and resolution chart, if with the form without flower arrangement, only expose main graph, then the shading coordinate points of this main graph is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1-b)/2, Yp=(Py+t+d1+b)/2-t-d1, and central transformation value is X=0, Y=0;

When described full graphics comprises main graph and resolution chart, if with the form without flower arrangement, exposure main graph and resolution chart, then the shading coordinate points of this main graph is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=-(Py+d1-b)/2, Yp=(Py+d1+b)/2-t-d1, and central transformation value is X=0, Y=0; And the shading coordinate points of corresponding resolution chart is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=(Py+d1+b)/2-t, Yp=(Py+d1+b)/2, and central transformation value is X=0, Y=-d1;

When described full graphics comprises main graph and resolution chart, if with the form of flower arrangement, only expose main graph, then the shading coordinate points of this main graph is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1-b)/2, Yp=(Py+t+d1+b)/2-t-d1, and central transformation value is X=0, Y=0;

When described full graphics comprises main graph and resolution chart, if with the form of flower arrangement, exposure main graph and resolution chart, then the shading coordinate points of this main graph is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1-b)/2, Yp=(Py+t+d1+b)/2-t-d1-t-d4, and central transformation value is X=0, Y=0; And, the shading coordinate points of corresponding resolution chart is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=(Py+t+d1+b)/2-t, Yp=(Py+t+d1+b)/2, and central transformation value is X=0, Y=-t-d1;

Wherein, (Xm, Ym) be the first shading coordinate points, (Xp, Yp) be the second shading coordinate points, Xm and Xp is the parameter value corresponding to described first axle, Ym and Yp is the parameter value corresponding to described second axle, X is along described first transformation of axis value, Y is along described second transformation of axis value, Px is described first expectation stepping length, Py is described second expectation stepping length, a is the width of buffer zone, left side on described first direction of principal axis on a described full graphics, b is the height of buffer zone, downside on described second direction of principal axis on a described full graphics, t is described true altitude, d1 is described main graph and the spacing of described resolution chart in described reticle, d4 is described resolution chart and the spacing of the described main graph of part in described reticle.

For the lithographic processes of two-in-one version, the present invention proposes following processing mode:

Preferably, described photo-etching machine exposal parameter comprises: shading coordinate and central transformation value; If described reticle comprises along described first axisymmetric two full graphics, and the below that the first figure is positioned at the top of described first axle, second graph is positioned at described first axle, then calculate described photo-etching machine exposal parameter in the following manner:

When described full graphics only comprises main graph, the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=d3/2, Yp=(Py+b)+d3/2, and central transformation value is X=0, Y=-(Py+b+d3)/2; And, the shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+b)-d3/2, Yp=-d3/2, and central transformation value is X=0, Y=(Py+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if only to expose main graph without the form of flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=d3/2, Yp=(Py+b)+d3/2, and central transformation value is X=0, Y=-(Py+t+d1+b+d3)/2; And, the shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=0, Y=(Py+t+d1+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if expose main graph and resolution chart with the form without flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=d3/2, Yp=(Py+b)+d3/2, and central transformation value is X=0, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+d1+b)-t+d3/2, Yp=(Py+d1+b)+d3/2, and central transformation value is X=0, Y=-d1-(Py+d1+b+d3)/2; And, the shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=0, Y=(Py+d1+b+d3)/2; The shading coordinate points of the resolution chart of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-t-d3/2, Yp=-d3/2, and central transformation value is X=0, Y=-d1+ (Py+d1+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if only expose main graph with the form of flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=d3/2, Yp=(Py+b)+d3/2, and central transformation value is X=0, Y=-(Py+t+d1+b+d3)/2; And, the shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=0, Y=(Py+t+d1+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if with the form of flower arrangement exposure main graph and resolution chart, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=d3/2, Yp=(Py+b)-t-d4+d3/2, and central transformation value is X=0, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+d1+b)+d3/2, Yp=(Py+t+d1+b)+d3/2, and central transformation value is X=0, Y=-t-d1-(Py+t+d1+b+d3)/2; And, the shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-t-d4-d3/2, and central transformation value is X=0, Y=(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-t-d3/2, Yp=-d3/2, and central transformation value is X=0, Y=-t-d1+ (Py+t+d1+b+d3)/2;

Wherein, (Xm, Ym) be the first shading coordinate points, (Xp, Yp) be the second shading coordinate points, Xm and Xp is the parameter value corresponding to described first axle, Ym and Yp is the parameter value corresponding to described second axle, X is along described first transformation of axis value, Y is along described second transformation of axis value, Px is described first expectation stepping length, Py is described second expectation stepping length, a is the width of buffer zone, left side on described first direction of principal axis on a described full graphics, b is the height of buffer zone, downside on described second direction of principal axis on a described full graphics, t is described true altitude, d1 is described main graph and the spacing of described resolution chart in described reticle, d3 is described first figure and the spacing of described second graph on described second direction of principal axis, d4 is described resolution chart and the spacing of the described main graph of part in described reticle.

For the lithographic processes of three-in-one version, the present invention proposes following processing mode:

Preferably, described photo-etching machine exposal parameter comprises: shading coordinate and central transformation value; If described reticle comprises three full graphics, first figure and the 3rd figure are along described first rotational symmetry, second graph between described first figure and described 3rd figure and the central point of second graph overlap with described initial point, then calculate described photo-etching machine exposal parameter in the following manner:

When described full graphics only comprises main graph, the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+b)/2+d3, Yp=(Py+b)/2+ (Py+b+d3), and central transformation value is X=0, Y=-(Py+b+d3); The shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+b)/2, Yp=(Py+b)/2, and central transformation value is X=0, Y=0; And, the shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+b)/2-(Py+b+d3), Yp=(Py+b)/2-(Py+b+d3), and central transformation value is X=0, Y=Py+b+d3;

When described full graphics comprises main graph and resolution chart, if only to expose main graph without the form of flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+t+d1+b)/2+d3, Yp=(Py+t+d1+b)/2+ (Py+b+d3), and central transformation value is X=0, Y=-(Py+t+d1+b+d3); The shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2, Yp=(Py+t+d1+b)/2-t-d1, and central transformation value is X=0, Y=0; And, the shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2-(Py+t+d1+b+d3), Yp=-(Py+t+d1+b)/2-t-d1-d3, and central transformation value is X=0, Y=Py+t+d1+b+d3;

When described full graphics comprises main graph and resolution chart, if expose main graph and resolution chart with the form without flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+d1+b)/2+d3, Yp=(Py+d1+b)/2-t+ (Py+b+d3), and central transformation value is X=0, Y=-(Py+d1+b+d3); The shading coordinate points of the resolution chart of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+d1+b)/2-t+ (Py+d1+b+d3), Yp=(Py+d1+b)/2+ (Py+d1+b+d3), and central transformation value is X=0, Y=-d1-(Py+d1+b+d3); The shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+d1+b)/2, Yp=(Py+d1+b)/2-t-d1, and central transformation value is X=0, Y=0; The shading coordinate points of the resolution chart of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+d1+b)/2-t, Yp=(Py+d1+b)/2, and central transformation value is X=0, Y=-d1; And, the shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+d1+b)/2-(Py+d1+b+d3), Yp=-(Py+d1+b)/2-t-d1-d3, and central transformation value is X=0, Y=Py+d1+b+d3; The shading coordinate points of the resolution chart of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+d1+b)/2-t-d3, Yp=-(Py+d1+b)/2-d3, and central transformation value is X=0, Y=-d1+ (Py+d1+b+d3);

When described full graphics comprises main graph and resolution chart, if only expose main graph with the form of flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+t+d1+b)/2+d3, Yp=(Py+t+d1+b)/2+ (Py+b+d3), and central transformation value is X=0, Y=-(Py+t+d1+b+d3); The shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2, Yp=(Py+t+d1+b)/2-t-d1, and central transformation value is X=0, Y=0; And, the shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2-(Py+t+d1+b+d3), Yp=(Py+t+d1+b)/2-(Py+b+d3), and central transformation value is X=0, Y=Py+t+d1+b+d3;

When described full graphics comprises main graph and resolution chart, if with the form of flower arrangement exposure main graph and resolution chart, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+t+d1+b)/2+d3, Yp=(Py+t+d1+b)/2-t-d4+ (Py+b+d3), and central transformation value is X=0, Y=-(Py+t+d1+b+d3); The shading coordinate points of the resolution chart of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+t+d1+b)/2+ (Py+d1+b+d3), Yp=(Py+t+d1+b)/2+ (Py+t+d1+b+d3), and central transformation value is X=0, Y=-t-d1-(Py+t+d1+b+d3); The shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2, Yp=(Py+t+d1+b)/2-t-d1-t-d4, and central transformation value is X=0, Y=0; The shading coordinate points of the resolution chart of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+t+d1+b)/2-t, Yp=(Py+t+d1+b)/2, and central transformation value is X=0, Y=-t-d1; And, the shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2-(Py+t+d1+b+d3), Yp=(Py+t+d1+b)/2-t-d1-t-d4-(Py+t+d1+b+d3), and central transformation value is X=0, Y=Py+t+d1+b+d3; The shading coordinate points of the resolution chart of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2-t-d3, Yp=-(Py+t+d1+b)/2-d3, and central transformation value is X=0, Y=Py+b+d3;

Wherein, (Xm, Ym) be the first shading coordinate points, (Xp, Yp) be the second shading coordinate points, Xm and Xp is the parameter value corresponding to described first axle, Ym and Yp is the parameter value corresponding to described second axle, X is along described first transformation of axis value, Y is along described second transformation of axis value, Px is described first expectation stepping length, Py is described second expectation stepping length, a is the width of buffer zone, left side on described first direction of principal axis on a described full graphics, b is the height of buffer zone, downside on described second direction of principal axis on a described full graphics, t is described true altitude, d1 is described main graph and the spacing of described resolution chart in described reticle, d3 is described first figure and described second graph, described second graph and the spacing of described 3rd figure on described second direction of principal axis, d4 is described resolution chart and the spacing of the described main graph of part in described reticle.

For the lithographic processes of four-in-one version, the present invention proposes following processing mode:

Preferably, described photo-etching machine exposal parameter comprises: shading coordinate and central transformation value; If described reticle comprises four full graphics, first figure is positioned at first quartile, second graph is positioned at the second quadrant, the 3rd figure is positioned at third quadrant, the 4th figure is positioned at fourth quadrant, and the first figure and the 4th figure, second graph and the 3rd figure are respectively along described first rotational symmetry, first figure and second graph, the 3rd figure and the 4th figure respectively along described second rotational symmetry, then calculate described photo-etching machine exposal parameter in the following manner:

When described full graphics only comprises main graph, the shading coordinate points of the main graph of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=d3/2, Yp=Py+b+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-(Py+b+d3)/2; The shading coordinate points of the main graph of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=d3/2, Yp=Py+b+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-(Py+b+d3)/2; The shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-(Py+b)-d3/2, Yp=-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=(Py+b+d3)/2; And the shading coordinate points of the main graph of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-(Py+b)-d3/2, Yp=-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=(Py+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if only to expose main graph without the form of flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=d3/2, Yp=Py+b+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the main graph of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=d3/2, Yp=Py+b+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=(Py+t+d1+b+d3)/2; And, the shading coordinate points of the main graph of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=(Py+t+d1+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if expose main graph and resolution chart with the form without flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=d3/2, Yp=Py+b-t+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-(Py+d1+b+d3)/2; The shading coordinate points of the resolution chart of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=Py+d1+b-t+d3/2, Yp=Py+d1+b+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-d1-(Py+d1+b+d3)/2; The shading coordinate points of the main graph of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=d3/2, Yp=Py+b-t+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-(Py+d1+b+d3)/2; The shading coordinate points of the resolution chart of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=Py+d1+b-t+d3/2, Yp=Py+d1+b+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-d1-(Py+d1+b+d3)/2; The shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-(Py+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=(Py+d1+b+d3)/2; The shading coordinate points of the resolution chart of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-t-d3/2, Yp=-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-d1+ (Py+d1+b+d3)/2; And, the shading coordinate points of the main graph of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-(Py+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=(Py+d1+b+d3)/2; The shading coordinate points of the resolution chart of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-t-d3/2, Yp=-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-d1+ (Py+d1+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if only expose main graph with the form of flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=d3/2, Yp=Py+b+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the main graph of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=d3/2, Yp=Py+b+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=(Py+t+d1+b+d3)/2; And, the shading coordinate points of the main graph of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=(Py+t+d1+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if with the form of flower arrangement exposure main graph and resolution chart, then the shading coordinate points of the main graph of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=d3/2, Yp=Py+b-t-d4+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=Py+d1+b+d3/2, Yp=Py+t+b+d1+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-t-d1-(Py+t+d1+b+d3)/2; The shading coordinate points of the main graph of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=d3/2, Yp=Py+b-t-d4+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=Py+d1+b+d3/2, Yp=Py+t+b+d1+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-t-d1-(Py+t+d1+b+d3)/2; The shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-t-d4-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-t-d3/2, Yp=-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-t-d1+ (Py+t+d1+b+d3)/2; And, the shading coordinate points of the main graph of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-t-d4-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-t-d3/2, Yp=-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-t-d1+ (Py+t+d1+b+d3)/2;

Wherein, (Xm, Ym) be the first shading coordinate points, (Xp, Yp) be the second shading coordinate points, Xm and Xp is the parameter value corresponding to described first axle, Ym and Yp is the parameter value corresponding to described second axle, X is along described first transformation of axis value, Y is along described second transformation of axis value, Px is described first expectation stepping length, Py is described second expectation stepping length, a is the width of buffer zone, left side on described first direction of principal axis on a described full graphics, b is the height of buffer zone, downside on described second direction of principal axis on a described full graphics, t is described true altitude, d1 is described main graph and the spacing of described resolution chart in described reticle, d2 is described first figure and described second graph, described 3rd figure and the spacing of described 4th figure on described first direction of principal axis, d3 is described first figure and described 4th figure, described second graph and the spacing of described 3rd figure on described second direction of principal axis, d4 is described resolution chart and the spacing of the described main graph of part in described reticle.

By above technical scheme, according to user for the actual photoetching demand on silicon chip, can calculate that the exposure parameter for litho machine is arranged, thus a kind of general, exposure parameter account form is accurately provided, simplify the computation process of exposure parameter.

Accompanying drawing explanation

Fig. 1 shows the schematic diagram of the photoetching treatment in correlation technique;

Fig. 2 shows the schematic diagram of the silicon chip in correlation technique;

Fig. 3 shows the schematic diagram of the exposure area on silicon chip according to an embodiment of the invention;

Fig. 4 shows the schematic diagram of the Region dividing of each according to an embodiment of the invention space of a whole page;

Fig. 5 shows the schematic diagram setting up rectangular coordinate system according to an embodiment of the invention based on single edition;

Fig. 6 shows the schematic diagram setting up rectangular coordinate system according to an embodiment of the invention based on two-in-one version;

Fig. 7 shows the schematic diagram setting up rectangular coordinate system according to an embodiment of the invention based on three-in-one version;

Fig. 8 shows the schematic diagram setting up rectangular coordinate system according to an embodiment of the invention based on four-in-one version;

Fig. 9 shows the schematic flow diagram of the acquisition methods of photo-etching machine exposal parameter according to an embodiment of the invention.

Embodiment

In order to more clearly understand above-mentioned purpose of the present invention, feature and advantage, below in conjunction with the drawings and specific embodiments, the present invention is further described in detail.It should be noted that, when not conflicting, the feature in the embodiment of the application and embodiment can combine mutually.

Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from other modes described here and implement, and therefore, the present invention is not limited to the restriction of following public specific embodiment.

One, term definition

First, some terms used for program composition carry out strict difinition:

Reticle (Mask or Reticle; Or name " mask plate "): square, concrete size is not etc.; It is manufactured with figure, and as mother matrix, in semiconductor lithography process, figure is transferred on silicon chip (reticle).

Silicon chip (Wafer): circular, concrete size is not etc.As shown in Figure 2, cut flat limit 106A to locate for 8inch with lower silicon slice (i.e. reticle 106), simultaneously at 106A place, flat limit Laser Jet, the extreme higher position of stamp and the distance of dull and stereotyped 106A are Laser Jet height h.Semiconductor product is fabricated on silicon chip.In a photolithographic process, the figure in reticle is transferred on silicon chip.

Single edition: in one piece of reticle, only make single-layer lithography figure, be called single edition.Such as can single edition shown in reference diagram 5, its concrete situation will be described in detail below.

Compound version: make multilayer litho pattern by certain specification in one piece of reticle, be called compound version.Such as can reference diagram 6, Fig. 7 and Fig. 8, be respectively two-in-one version, three-in-one version and four-in-one version.

Litho pattern (Frame): be produced on the litho pattern on Mask, single edition has 1, and two-in-one, three-in-one, four-in-one compound version has 2,3,4 respectively, and (be positioned at the diverse location of compound version, coordinate is different; But structure, measure-alike), in Frame, figure exposes to the sun on silicon chip according to certain Exposure mode, realizes the transfer to figure.

Exposure area (Shot): after stepper litho exposure, as shown in Figure 3, silicon chip (i.e. reticle 106) is formed size, measure-alike multiple independent drawings, and each is called a Shot(and exposure area 106B).Wherein, the figure (Frame from Mask) in different Shot can be different.

Resolution chart (Test): if the figure in Frame is divided into 2 parts, then upper section is resolution chart, is called Test.

Main graph (Main): if the figure in Frame is divided into 2 parts, then inferior portion is main graph, is called Main.Or in another case, only have main graph and do not have resolution chart, then Frame entirety is called Main.Such as Fig. 4 shows the areal distribution schematic diagram in a Frame, wherein, for the first above-mentioned situation, then with A, B rectangle that is diagonal line end points for main graph, the rectangle being diagonal line end points with C, D is for resolution chart; For above-mentioned the second situation, then with A, D rectangle that is diagonal line end points for main graph.

It should be noted that: although in specific embodiment provided by the present invention, Test part up, Main part in below, but in fact the definition of the two is relative, the derivation of formula is made also to comprise Test part in below, Main part situation up, namely the present invention is actual includes two kinds of situations; Wherein, only need part corresponding for Main, the Test in all formula directly to exchange namely be applicable to Test part in below, Main part situation up, do not affect any calculating and actually to use.

Buffer area (Buffer): for avoiding stepping defect, adds white space on the Frame figure left side of reality and below, is called Buffer.Particularly, left side width to be the region of " a " and below height be " b " region and buffer area in Fig. 4.

Exposure mode: because whether single edition have Test figure, concrete exposed portion on silicon chip can not factor on an equal basis with compound version, graph area, different reticle, same reticle etc. can have multiple exposure combination, and each is called a kind of Exposure mode.

Table 1

Particularly, 5 kinds of Exposure modes that the reticle of every type that the present invention defines is corresponding have been shown in upper table 1; And comprise single edition and three kinds of compound versions due to reticle, then one co-exist in 20 kinds of concrete Exposure modes.

Two, basic parameter definition

Table 2

As schematically, table 2 gives based on a kind of concrete parameter definition mode of the present invention, certainly, can have different agreement numerical value for different Design Service and FAB.

Three, calculation exposure parameter

Fig. 9 shows the schematic flow diagram of the acquisition methods of photo-etching machine exposal parameter according to an embodiment of the invention.

As shown in Figure 9, the acquisition methods of photo-etching machine exposal parameter according to an embodiment of the invention, comprising:

Step 902, resolves the parameters input instruction that receives, with to obtain on silicon chip in the horizontal direction first expect stepping length and the second expectation stepping length vertically;

According to described first, step 904, expects that stepping length and described second expects stepping length, calculates corresponding photo-etching machine exposal parameter.

In this technical scheme, in view of the result of the optimum configurations to reticle and silicon chip, need to embody on silicon chip, thus direct according to technician for the stepping demand on silicon chip, extrapolate the exposure parameter of photoetching, meet user demand and the applied mental of technician on the one hand, on the other hand can calculation exposure parameter exactly, there is no the requirement of experience aspect, do not need repeatedly heuristically to perform lithography operations yet, what contribute to raising parameter arranges efficiency, causes the waste to reticle when avoiding exploration to operate.

Therefore, in technical scheme of the present invention, for the calculating of exposure parameter, proposing based on the stepping length on silicon chip is benchmark, derives the thinking of concrete exposure parameter.Be described in detail based on this thinking below.

1, the definition of stepped parameter

Table 3

Wherein, with reference to the rectangular coordinate system shown in figure 5 to Fig. 8, then Px is namely along the stepping length of X-direction, and Py is namely along the stepping length of Y direction.

It is to be noted that t1 and t2 selects input, wherein, for comprising Main and Test figure in Frame, but when (comprising the situation of arranging flowers or not arranging flowers) when only exposing Main or expose Main and Test simultaneously and arrange flowers, should choose or input t1; For when exposing Main and Test but do not arrange flowers simultaneously, then should choose or input t2.Therefore, herein by t1 and t2, have expressed under different situations, the height in Test region should be distinguished and treat.

For convenience of description, then in technical scheme herein, the height only using " t " as Test region, for different situations, it, based on foregoing description, specifically composes as t1 or t2 by those skilled in the art.

2, computing formula

1) columns (Column) and line number (Row)

Columns X/ line number Y is the integral multiple that silicon chip diameter holds " the actual stepping in the X/Y direction of the upper Shot of Wafer ", then adds left and right/upper and lower 2 imperfect Shot numbers.

Be expressed as formula:

$X=\frac{\mathrm{\Φ}}{\mathrm{Px}}+2,Y=\frac{\mathrm{\Φ}}{\mathrm{Py}}+2;$

Wherein, Φ is the diameter length of reticle, and Px is the actual stepping of the X-direction of Shot on Wafer, and Py is the actual stepping of the Y-direction of Shot on Wafer.

2）Map offset

Map offset value comprises numerical value in the X-axis direction and numerical value in the Y-axis direction.Wherein, be symmetrical owing to being exposed on silicon chip surface, then X (Map offset)=0; Then there is the computing formula that can be applied to all types of Exposure mode in Y (Mapoffset): Y (Mapoffset):

$M=\left\{\begin{array}{c}\mathrm{INT}\left\{\right[\mathrm{INT}\left(\frac{c}{\mathrm{Py}}\right)+0.5]\×\mathrm{Py}-c\},\frac{Y}{2}-\mathrm{INT}\left(\frac{Y}{2}\right)>0;\\ \mathrm{INT}\left\{\right[\mathrm{INT}\left(\frac{c}{\mathrm{Py}}\right)+1]\×\mathrm{Py}-c-2000+f\},\frac{Y}{2}-\mathrm{INT}\left(\frac{Y}{2}\right)=0\end{array}\right.,$

$f=\left\{\begin{array}{cc}\frac{t_1}{2},& t_1>0;\\ 0,& t_1=0\end{array}\right.,$

$c=\frac{\sqrt{{\mathrm{\Φ}}^2-l^2}}{2}-h.$

Wherein, c and f is intermediate value, Y is the arrangement number of the in the vertical direction of exposure area on described silicon chip, Py is described second expectation stepping length, Φ is the diameter length of described silicon chip, and l is the flat edge lengths in described reticle, and h is the Laser Jet height in described reticle, INT (a) for being less than or equal to the maximum integer of a, t ₁for the height of Test figure in the reticle of (table 1 has explanation) when " Main that only exposes to the sun does not arrange flowers " and " flower arrangement " two kinds of situations.

3) Blind coordinate and Center Shift

First, corresponding to the definition of above-mentioned all kinds of parameters etc., then each Frame in reticle can be expressed as follows in coordinate system as shown in figures 5-8:

Table 4

Based on table 4, then for single edition situation shown in Fig. 5, the coordinate figure of each end points in the Frame shown in Fig. 4 can be obtained, shown in table 5 specific as follows:

Table 5

According to shown in table 5, then according to the dissimilar coordinate choosing difference, be the result of required Blind coordinate; And Center Shift is the negative value of the Mask the center displacement of respective type.

So, for the situation of single edition as shown in Figure 5, can obtain as shown in table 6 below correspond to various Exposure mode under, for the specific formula for calculation of Blind or Center Shift value.

Table 6

Certainly, table 5 illustrate only the situation of single edition corresponding to Fig. 5; And for the situation of the compound version shown in Fig. 6-Fig. 8, then the specification due to each Frame is identical, according to its change in location in a coordinate system, can carry out coordinate conversion and obtain by table 5, repeats no more herein.

So, based on the extreme coordinates shown in the similar table 5 after coordinate conversion, the exposure parameter computing formula corresponding to two-in-one version, three-in-one version and four-in-one version can be obtained respectively, schematically illustrate with table 7, table 8 and table 9 respectively below.

Table 7

Table 8

Table 9

The numerical value of all kinds of exposure parameters that above-mentioned formulae discovery according to the present invention goes out, directly can quote when exposure program is programmed, without the need to other any operation.

More than be described with reference to the accompanying drawings technical scheme of the present invention, considered that the exposure parameter in correlation technique needs rely on artificial experience and heuristically test, inefficiency.Therefore, the present invention proposes a kind of acquisition methods of photoetching process exposure parameter, can according to user for the actual photoetching demand on silicon chip, calculate that the exposure parameter for litho machine is arranged, thus a kind of general, exposure parameter account form is accurately provided, simplify the computation process of exposure parameter.

Those skilled in the art should understand, embodiments of the invention can be provided as method, system or computer program.Therefore, the present invention can adopt the form of complete hardware embodiment, completely software implementation or the embodiment in conjunction with software and hardware aspect.And the present invention can adopt in one or more form wherein including the upper computer program implemented of computer-usable storage medium (including but not limited to magnetic disk memory, CD-ROM, optical memory etc.) of computer usable program code.

The present invention describes with reference to according to the process flow diagram of the method for the embodiment of the present invention, equipment (system) and computer program and/or block scheme.Should understand can by the combination of the flow process in each flow process in computer program instructions realization flow figure and/or block scheme and/or square frame and process flow diagram and/or block scheme and/or square frame.These computer program instructions can being provided to the processor of multi-purpose computer, special purpose computer, Embedded Processor or other programmable data processing device to produce a machine, making the instruction performed by the processor of computing machine or other programmable data processing device produce device for realizing the function of specifying in process flow diagram flow process or multiple flow process and/or block scheme square frame or multiple square frame.

These computer program instructions also can be stored in can in the computer-readable memory that works in a specific way of vectoring computer or other programmable data processing device, the instruction making to be stored in this computer-readable memory produces the manufacture comprising command device, and this command device realizes the function of specifying in process flow diagram flow process or multiple flow process and/or block scheme square frame or multiple square frame.

These computer program instructions also can be loaded in computing machine or other programmable data processing device, make on computing machine or other programmable devices, to perform sequence of operations step to produce computer implemented process, thus the instruction performed on computing machine or other programmable devices is provided for the step realizing the function of specifying in process flow diagram flow process or multiple flow process and/or block scheme square frame or multiple square frame.

The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (11)

1. an acquisition methods for photo-etching machine exposal parameter, is characterized in that, comprising:

Resolve the parameters input instruction that receives, with to obtain on silicon chip in the horizontal direction first expect stepping length and the second expectation stepping length vertically;

Expect that stepping length and described second expects stepping length according to described first, calculate corresponding photo-etching machine exposal parameter.

2. the acquisition methods of photo-etching machine exposal parameter according to claim 1, it is characterized in that, described photo-etching machine exposal parameter comprises: the first order number in the horizontal direction of the exposure area of described reticle on silicon chip and the second order number of in the vertical direction.

3. the acquisition methods of photo-etching machine exposal parameter according to claim 2, is characterized in that, described first order number described second order number

Wherein, Φ is the diameter length of described silicon chip, and Px is described first expectation stepping length, and Py is described second expectation stepping length.

4. the acquisition methods of photo-etching machine exposal parameter according to any one of claim 1 to 3, is characterized in that, also comprise:

Resolve described parameters input instruction, obtain the true altitude of the resolution chart in the vertical direction in the figure to be exposed in reticle;

Expect that stepping length, described second expects stepping length and described true altitude according to described first, calculate described photo-etching machine exposal parameter.

5. the acquisition methods of photo-etching machine exposal parameter according to claim 4, is characterized in that, described in the figure to be exposed in reticle, photo-etching machine exposal parameter comprises:

Bias compensation value vertically on described silicon chip

$M=\left\{\begin{array}{c}\mathrm{INT}\left\{\right[\mathrm{INT}\left(\frac{c}{\mathrm{Py}}\right)+0.5]\×\mathrm{Py}-c\},\frac{Y}{2}-\mathrm{INT}\left(\frac{Y}{2}\right)>0;\\ \mathrm{INT}\left\{\right[\mathrm{INT}\left(\frac{c}{\mathrm{Py}}\right)+1]\×\mathrm{Py}-c-2000+f\},\frac{Y}{2}-\mathrm{INT}\left(\frac{Y}{2}\right)=0\end{array}\right.,$

$f=\left\{\begin{array}{cc}\frac{t_1}{2},& t_1>0;\\ 0,& t_1=0\end{array}\right.,$

$c=\frac{\sqrt{{\mathrm{\Φ}}^2-l^2}}{2}-h,$

Wherein, c and f is intermediate value, Y is the arrangement number of the in the vertical direction of exposure area on described silicon chip, Py is described second expectation stepping length, Φ is the diameter length of described silicon chip, and l is the flat edge lengths in described reticle, and h is the Laser Jet height in described reticle, INT (a) for being less than or equal to the maximum integer of a, t ₁for the true altitude of the resolution chart in the vertical direction in the figure to be exposed in described reticle.

6. the acquisition methods of photo-etching machine exposal parameter according to claim 5, is characterized in that, t ₁for during only to expose the main graph in described figure to be exposed or the main graph exposed in described figure to be exposed and resolution chart without the form of flower arrangement simultaneously, or when exposing all or part of of described main graph and described resolution chart with flower arrangement form, the true altitude of the resolution chart in the vertical direction in described figure to be exposed.

7. the acquisition methods of photo-etching machine exposal parameter according to claim 5, is characterized in that, the process calculating described photo-etching machine exposal parameter comprises:

Set up with the first rectangular coordinate system that the central point of reticle is initial point, described horizontal direction is the first axle, described vertical direction is the second axle;

Set up with the second rectangular coordinate system that the central point of silicon chip is initial point, described horizontal direction is the first axle, described vertical direction is the second axle;

According to the positional information of the region each to be exposed in the arbitrary full graphics in described reticle in described first rectangular coordinate system and described second rectangular coordinate system, determine described photo-etching machine exposal parameter.

8. the acquisition methods of photo-etching machine exposal parameter according to claim 7, is characterized in that, described photo-etching machine exposal parameter comprises: shading coordinate and central transformation value;

When described reticle only comprising a full graphics, calculate described photo-etching machine exposal parameter in the following manner:

When described full graphics only comprises main graph, the shading coordinate points of this main graph is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=-(Py-b)/2, Yp=(Py+b)/2, and central transformation value is X=0, Y=0;

When described full graphics comprises main graph and resolution chart, if with the form without flower arrangement, only expose main graph, then the shading coordinate points of this main graph is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1-b)/2, Yp=(Py+t+d1+b)/2-t-d1, and central transformation value is X=0, Y=0;

When described full graphics comprises main graph and resolution chart, if with the form without flower arrangement, exposure main graph and resolution chart, then the shading coordinate points of this main graph is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=-(Py+d1-b)/2, Yp=(Py+d1+b)/2-t-d1, and central transformation value is X=0, Y=0; And the shading coordinate points of corresponding resolution chart is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=(Py+d1+b)/2-t, Yp=(Py+d1+b)/2, and central transformation value is X=0, Y=-d1;

When described full graphics comprises main graph and resolution chart, if with the form of flower arrangement, only expose main graph, then the shading coordinate points of this main graph is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1-b)/2, Yp=(Py+t+d1+b)/2-t-d1, and central transformation value is X=0, Y=0;

When described full graphics comprises main graph and resolution chart, if with the form of flower arrangement, exposure main graph and resolution chart, then the shading coordinate points of this main graph is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1-b)/2, Yp=(Py+t+d1+b)/2-t-d1-t-d4, and central transformation value is X=0, Y=0; And, the shading coordinate points of corresponding resolution chart is Xm=(a-Px)/2, Xp=(Px+a)/2, Ym=(Py+t+d1+b)/2-t, Yp=(Py+t+d1+b)/2, and central transformation value is X=0, Y=-t-d1;

Wherein, (Xm, Ym) be the first shading coordinate points, (Xp, Yp) be the second shading coordinate points, Xm and Xp is the parameter value corresponding to described first axle, Ym and Yp is the parameter value corresponding to described second axle, X is along described first transformation of axis value, Y is along described second transformation of axis value, Px is described first expectation stepping length, Py is described second expectation stepping length, a is the width of buffer zone, left side on described first direction of principal axis on a described full graphics, b is the height of buffer zone, downside on described second direction of principal axis on a described full graphics, t is described true altitude, d1 is described main graph and the spacing of described resolution chart in described reticle, d4 is described resolution chart and the spacing of the described main graph of part in described reticle.

9. the acquisition methods of photo-etching machine exposal parameter according to claim 7, is characterized in that, described photo-etching machine exposal parameter comprises: shading coordinate and central transformation value;

If described reticle comprises along described first axisymmetric two full graphics, and the below that the first figure is positioned at the top of described first axle, second graph is positioned at described first axle, then calculate described photo-etching machine exposal parameter in the following manner:

When described full graphics only comprises main graph, the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=d3/2, Yp=(Py+b)+d3/2, and central transformation value is X=0, Y=-(Py+b+d3)/2; And, the shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+b)-d3/2, Yp=-d3/2, and central transformation value is X=0, Y=(Py+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if only to expose main graph without the form of flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=d3/2, Yp=(Py+b)+d3/2, and central transformation value is X=0, Y=-(Py+t+d1+b+d3)/2; And, the shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=0, Y=(Py+t+d1+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if expose main graph and resolution chart with the form without flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=d3/2, Yp=(Py+b)+d3/2, and central transformation value is X=0, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+d1+b)-t+d3/2, Yp=(Py+d1+b)+d3/2, and central transformation value is X=0, Y=-d1-(Py+d1+b+d3)/2; And, the shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=0, Y=(Py+d1+b+d3)/2; The shading coordinate points of the resolution chart of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-t-d3/2, Yp=-d3/2, and central transformation value is X=0, Y=-d1+ (Py+d1+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if only expose main graph with the form of flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=d3/2, Yp=(Py+b)+d3/2, and central transformation value is X=0, Y=-(Py+t+d1+b+d3)/2; And, the shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=0, Y=(Py+t+d1+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if with the form of flower arrangement exposure main graph and resolution chart, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=d3/2, Yp=(Py+b)-t-d4+d3/2, and central transformation value is X=0, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+d1+b)+d3/2, Yp=(Py+t+d1+b)+d3/2, and central transformation value is X=0, Y=-t-d1-(Py+t+d1+b+d3)/2; And, the shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-t-d4-d3/2, and central transformation value is X=0, Y=(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-t-d3/2, Yp=-d3/2, and central transformation value is X=0, Y=-t-d1+ (Py+t+d1+b+d3)/2;

Wherein, (Xm, Ym) be the first shading coordinate points, (Xp, Yp) be the second shading coordinate points, Xm and Xp is the parameter value corresponding to described first axle, Ym and Yp is the parameter value corresponding to described second axle, X is along described first transformation of axis value, Y is along described second transformation of axis value, Px is described first expectation stepping length, Py is described second expectation stepping length, a is the width of buffer zone, left side on described first direction of principal axis on a described full graphics, b is the height of buffer zone, downside on described second direction of principal axis on a described full graphics, t is described true altitude, d1 is described main graph and the spacing of described resolution chart in described reticle, d3 is described first figure and the spacing of described second graph on described second direction of principal axis, d4 is described resolution chart and the spacing of the described main graph of part in described reticle.

10. the acquisition methods of photo-etching machine exposal parameter according to claim 7, is characterized in that, described photo-etching machine exposal parameter comprises: shading coordinate and central transformation value;

If described reticle comprises three full graphics, first figure and the 3rd figure are along described first rotational symmetry, second graph between described first figure and described 3rd figure and the central point of second graph overlap with described initial point, then calculate described photo-etching machine exposal parameter in the following manner:

When described full graphics only comprises main graph, the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+b)/2+d3, Yp=(Py+b)/2+ (Py+b+d3), and central transformation value is X=0, Y=-(Py+b+d3); The shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+b)/2, Yp=(Py+b)/2, and central transformation value is X=0, Y=0; And, the shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+b)/2-(Py+b+d3), Yp=(Py+b)/2-(Py+b+d3), and central transformation value is X=0, Y=Py+b+d3;

When described full graphics comprises main graph and resolution chart, if only to expose main graph without the form of flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+t+d1+b)/2+d3, Yp=(Py+t+d1+b)/2+ (Py+b+d3), and central transformation value is X=0, Y=-(Py+t+d1+b+d3); The shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2, Yp=(Py+t+d1+b)/2-t-d1, and central transformation value is X=0, Y=0; And, the shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2-(Py+t+d1+b+d3), Yp=-(Py+t+d1+b)/2-t-d1-d3, and central transformation value is X=0, Y=Py+t+d1+b+d3;

When described full graphics comprises main graph and resolution chart, if expose main graph and resolution chart with the form without flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+d1+b)/2+d3, Yp=(Py+d1+b)/2-t+ (Py+b+d3), and central transformation value is X=0, Y=-(Py+d1+b+d3); The shading coordinate points of the resolution chart of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+d1+b)/2-t+ (Py+d1+b+d3), Yp=(Py+d1+b)/2+ (Py+d1+b+d3), and central transformation value is X=0, Y=-d1-(Py+d1+b+d3); The shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+d1+b)/2, Yp=(Py+d1+b)/2-t-d1, and central transformation value is X=0, Y=0; The shading coordinate points of the resolution chart of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+d1+b)/2-t, Yp=(Py+d1+b)/2, and central transformation value is X=0, Y=-d1; And, the shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+d1+b)/2-(Py+d1+b+d3), Yp=-(Py+d1+b)/2-t-d1-d3, and central transformation value is X=0, Y=Py+d1+b+d3; The shading coordinate points of the resolution chart of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+d1+b)/2-t-d3, Yp=-(Py+d1+b)/2-d3, and central transformation value is X=0, Y=-d1+ (Py+d1+b+d3);

When described full graphics comprises main graph and resolution chart, if only expose main graph with the form of flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+t+d1+b)/2+d3, Yp=(Py+t+d1+b)/2+ (Py+b+d3), and central transformation value is X=0, Y=-(Py+t+d1+b+d3); The shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2, Yp=(Py+t+d1+b)/2-t-d1, and central transformation value is X=0, Y=0; And, the shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2-(Py+t+d1+b+d3), Yp=(Py+t+d1+b)/2-(Py+b+d3), and central transformation value is X=0, Y=Py+t+d1+b+d3;

When described full graphics comprises main graph and resolution chart, if with the form of flower arrangement exposure main graph and resolution chart, then the shading coordinate points of the main graph of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+t+d1+b)/2+d3, Yp=(Py+t+d1+b)/2-t-d4+ (Py+b+d3), and central transformation value is X=0, Y=-(Py+t+d1+b+d3); The shading coordinate points of the resolution chart of the first figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+t+d1+b)/2+ (Py+d1+b+d3), Yp=(Py+t+d1+b)/2+ (Py+t+d1+b+d3), and central transformation value is X=0, Y=-t-d1-(Py+t+d1+b+d3); The shading coordinate points of the main graph of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2, Yp=(Py+t+d1+b)/2-t-d1-t-d4, and central transformation value is X=0, Y=0; The shading coordinate points of the resolution chart of second graph is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=(Py+t+d1+b)/2-t, Yp=(Py+t+d1+b)/2, and central transformation value is X=0, Y=-t-d1; And, the shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2-(Py+t+d1+b+d3), Yp=(Py+t+d1+b)/2-t-d1-t-d4-(Py+t+d1+b+d3), and central transformation value is X=0, Y=Py+t+d1+b+d3; The shading coordinate points of the resolution chart of the 3rd figure is Xm=-(Px+a)/2, Xp=(Px+a)/2, Ym=-(Py+t+d1+b)/2-t-d3, Yp=-(Py+t+d1+b)/2-d3, and central transformation value is X=0, Y=Py+b+d3;

Wherein, (Xm, Ym) be the first shading coordinate points, (Xp, Yp) be the second shading coordinate points, Xm and Xp is the parameter value corresponding to described first axle, Ym and Yp is the parameter value corresponding to described second axle, X is along described first transformation of axis value, Y is along described second transformation of axis value, Px is described first expectation stepping length, Py is described second expectation stepping length, a is the width of buffer zone, left side on described first direction of principal axis on a described full graphics, b is the height of buffer zone, downside on described second direction of principal axis on a described full graphics, t is described true altitude, d1 is described main graph and the spacing of described resolution chart in described reticle, d3 is described first figure and described second graph, described second graph and the spacing of described 3rd figure on described second direction of principal axis, d4 is described resolution chart and the spacing of the described main graph of part in described reticle.

The acquisition methods of 11. photo-etching machine exposal parameters according to claim 7, is characterized in that, described photo-etching machine exposal parameter comprises: shading coordinate and central transformation value;

If described reticle comprises four full graphics, first figure is positioned at first quartile, second graph is positioned at the second quadrant, the 3rd figure is positioned at third quadrant, the 4th figure is positioned at fourth quadrant, and the first figure and the 4th figure, second graph and the 3rd figure are respectively along described first rotational symmetry, first figure and second graph, the 3rd figure and the 4th figure respectively along described second rotational symmetry, then calculate described photo-etching machine exposal parameter in the following manner:

When described full graphics only comprises main graph, the shading coordinate points of the main graph of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=d3/2, Yp=Py+b+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-(Py+b+d3)/2; The shading coordinate points of the main graph of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=d3/2, Yp=Py+b+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-(Py+b+d3)/2; The shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-(Py+b)-d3/2, Yp=-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=(Py+b+d3)/2; And the shading coordinate points of the main graph of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-(Py+b)-d3/2, Yp=-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=(Py+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if only to expose main graph without the form of flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=d3/2, Yp=Py+b+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the main graph of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=d3/2, Yp=Py+b+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=(Py+t+d1+b+d3)/2; And, the shading coordinate points of the main graph of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=(Py+t+d1+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if expose main graph and resolution chart with the form without flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=d3/2, Yp=Py+b-t+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-(Py+d1+b+d3)/2; The shading coordinate points of the resolution chart of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=Py+d1+b-t+d3/2, Yp=Py+d1+b+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-d1-(Py+d1+b+d3)/2; The shading coordinate points of the main graph of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=d3/2, Yp=Py+b-t+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-(Py+d1+b+d3)/2; The shading coordinate points of the resolution chart of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=Py+d1+b-t+d3/2, Yp=Py+d1+b+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-d1-(Py+d1+b+d3)/2; The shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-(Py+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=(Py+d1+b+d3)/2; The shading coordinate points of the resolution chart of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-t-d3/2, Yp=-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-d1+ (Py+d1+b+d3)/2; And, the shading coordinate points of the main graph of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-(Py+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=(Py+d1+b+d3)/2; The shading coordinate points of the resolution chart of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-t-d3/2, Yp=-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-d1+ (Py+d1+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if only expose main graph with the form of flower arrangement, then the shading coordinate points of the main graph of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=d3/2, Yp=Py+b+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the main graph of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=d3/2, Yp=Py+b+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=(Py+t+d1+b+d3)/2; And, the shading coordinate points of the main graph of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=(Py+t+d1+b+d3)/2;

When described full graphics comprises main graph and resolution chart, if with the form of flower arrangement exposure main graph and resolution chart, then the shading coordinate points of the main graph of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=d3/2, Yp=Py+b-t-d4+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of the first figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=Py+d1+b+d3/2, Yp=Py+t+b+d1+d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-t-d1-(Py+t+d1+b+d3)/2; The shading coordinate points of the main graph of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=d3/2, Yp=Py+b-t-d4+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of second graph is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=Py+d1+b+d3/2, Yp=Py+t+b+d1+d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-t-d1-(Py+t+d1+b+d3)/2; The shading coordinate points of the main graph of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-t-d4-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of the 3rd figure is Xm=-(Px+a)-d2/2, Xp=-d2/2, Ym=-t-d3/2, Yp=-d3/2, and central transformation value is X=(Px+a+d2)/2, Y=-t-d1+ (Py+t+d1+b+d3)/2; And, the shading coordinate points of the main graph of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-(Py+t+d1+b)-d3/2, Yp=-t-d1-t-d4-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=(Py+t+d1+b+d3)/2; The shading coordinate points of the resolution chart of the 4th figure is Xm=d2/2, Xp=Px+a+d2/2, Ym=-t-d3/2, Yp=-d3/2, and central transformation value is X=-(Px+a+d2)/2, Y=-t-d1+ (Py+t+d1+b+d3)/2;

Wherein, (Xm, Ym) be the first shading coordinate points, (Xp, Yp) be the second shading coordinate points, Xm and Xp is the parameter value corresponding to described first axle, Ym and Yp is the parameter value corresponding to described second axle, X is along described first transformation of axis value, Y is along described second transformation of axis value, Px is described first expectation stepping length, Py is described second expectation stepping length, a is the width of buffer zone, left side on described first direction of principal axis on a described full graphics, b is the height of buffer zone, downside on described second direction of principal axis on a described full graphics, t is described true altitude, d1 is described main graph and the spacing of described resolution chart in described reticle, d2 is described first figure and described second graph, described 3rd figure and the spacing of described 4th figure on described first direction of principal axis, d3 is described first figure and described 4th figure, described second graph and the spacing of described 3rd figure on described second direction of principal axis, d4 is described resolution chart and the spacing of the described main graph of part in described reticle.