CN112130414B - Calibration method for feeding position of photolithography mask and exposure machine - Google Patents
Calibration method for feeding position of photolithography mask and exposure machine Download PDFInfo
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- CN112130414B CN112130414B CN202011348942.0A CN202011348942A CN112130414B CN 112130414 B CN112130414 B CN 112130414B CN 202011348942 A CN202011348942 A CN 202011348942A CN 112130414 B CN112130414 B CN 112130414B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7019—Calibration
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
Abstract
The invention relates to a calibration method for a loading position of a photoetching plate and an exposure machine, which comprises a marking pattern for carrying out loading position calibration on a calibration wafer, wherein the marking pattern comprises the following components: a plurality of columns of first patterns along a first direction; a plurality of rows of the first pattern along a second direction, the second direction being perpendicular to the first direction; at least one of the four corners of the mark pattern has no first pattern, and the length M of the mark pattern along the first direction and the length N of the mark pattern along the second direction can be evenly divided by the radius of the calibration wafer. And forming a photoetching pattern corresponding to the mark pattern inwards from the edge of the calibration wafer along the radius of the calibration wafer parallel to the first direction and the second direction respectively through the mark pattern on the photoetching plate, and correcting the position according to the deviation of the actual position and the preset position of the photoetching pattern in the first direction and the second direction, so as to achieve the purpose of reducing the product scrappage caused by the position deviation of the wafer.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a calibration method for a photoetching plate and a feeding position of an exposure machine.
Background
In the semiconductor manufacturing process, the photolithography process is always very important, and the precision thereof directly or indirectly affects the accuracy of the subsequent process. The traditional Canon exposure machine carries out calibration of an exposure position according to a calibration sheet (gold wafer) carried by the exposure machine to obtain a reference feeding parameter, after a V groove of a process wafer is aligned at the feeding position, the wafer is conveyed into the exposure machine according to the reference feeding parameter, the wafer cannot be accurately placed at a standard position on a bearing table, so that a large difference exists between an actual coordinate of a photoetching pattern formed on the wafer after exposure and a theoretical coordinate of the photoetching pattern, and further a product is scrapped.
Disclosure of Invention
Therefore, it is necessary to provide a photolithography mask and a method for calibrating a loading position of an exposure machine, which are directed to the problem that a wafer cannot be accurately placed at a standard position on a susceptor after the wafer is transferred to the exposure machine according to the reference loading parameters.
A reticle comprising a marking pattern for loading position calibration of a calibration wafer, the marking pattern comprising:
a plurality of columns of first patterns along a first direction;
a plurality of rows of a first pattern along a second direction, the second direction being mutually perpendicular to the first direction;
at least one of four corners of the mark pattern has no first pattern, and the length M of the mark pattern along the first direction and the length N of the mark pattern along the second direction can be evenly divided by the radius of the calibration wafer.
In one embodiment, the first pattern is absent from each of the four corners of the pattern of marks.
In one embodiment, the first pattern includes at least one of a rectangle, a triangle, a circle, and an oval.
In one embodiment, neither M nor N is less than 10 millimeters.
In one embodiment, the width of the first pattern in the first direction is L1, the distance between two adjacent columns of the first patterns is D1, the width of the first pattern in the second direction is L2, the distance between two adjacent rows of the first patterns is D2, and the widths L1 and L2 and the distances D1 and D2 are all less than or equal to a preset precision;
wherein the length M of the mark pattern along the first direction is an integral multiple of the sum of the width L1 and the distance D1, and the length N of the mark pattern along the second direction is an integral multiple of the sum of the width L2 and the distance D2.
In one embodiment, the widths L1 and L2 are equal, the spacings D1 and D2 are equal, and the marking pattern is square.
The photoetching plate comprises a mark pattern for carrying out loading position calibration on a calibration wafer, wherein the mark pattern comprises a plurality of columns of first patterns along a first direction and a plurality of rows of first patterns along a second direction, at least one of four corners of the mark pattern has no first pattern, the first direction and the second direction are mutually vertical, and the length M of the mark pattern along the first direction and the length N of the mark pattern along the second direction can be evenly divided by the radius of the calibration wafer. The method comprises the steps of forming a photoetching pattern corresponding to the marking pattern from the edge of a calibration wafer inwards along the radius of the calibration wafer parallel to a first direction and a second direction along the marking pattern of a plurality of lines of the first pattern along the first direction and a plurality of lines of the first pattern along the second direction vertical to the first direction on a photoetching plate, wherein the length M of the marking pattern along the first direction and the length N of the marking pattern along the second direction can be known by the radius of the calibration wafer, an integral number of photoetching patterns can be formed on the radius of the calibration wafer, the boundary of the photoetching pattern can be obtained according to at least one corner of the four corners of the marking pattern without the first pattern, and the position offset of the calibration wafer in the first direction and the second direction can be obtained according to the distance between the actual position and the preset position (the position of the edge of the calibration wafer) of the photoetching pattern formed on the radius of the calibration wafer in the first direction and the second direction, and further carrying out position correction to enable the photoetching pattern formed on the radius of the calibration wafer to be aligned with the edge of the calibration wafer in the first direction and the second direction, eliminating the difference between the actual position of the photoetching pattern formed on the calibration wafer after exposure and the theoretical position of the photoetching pattern (namely the edge of the calibration wafer), and achieving the purpose of reducing product scrappage caused by wafer position offset.
A calibration method of a loading position of an exposure machine, which uses the lithographic plate of any one of the above claims, comprising:
obtaining a calibration wafer with photoresist;
aligning and placing the calibration wafer in an exposure machine according to the feeding parameters;
exposing the photoresist in the edge area of the calibration wafer by using the photoetching plate, and forming a plurality of photoetching patterns on the calibration wafer after developing;
and acquiring the position offset of the calibration wafer according to the position relation between the photoetching pattern and the edge of the calibration wafer.
In one embodiment, the calibration method for the loading position of the exposure machine further comprises the following steps: and calibrating the feeding parameters according to the position deviation to obtain standard feeding parameters for feeding the process wafers.
In one embodiment, the step of obtaining the position offset of the calibration wafer according to the position relationship between the lithography pattern and the edge of the calibration wafer includes:
acquiring a second photoetching pattern X1 in the photoetching pattern at the junction of the X axis and the calibration wafer;
acquiring the position offset of the calibration wafer in the X-axis direction according to the distance between the second photoetching pattern X1 and the edge of the calibration wafer in the X-axis direction;
and the connecting line of the X axis and the center of the calibration wafer and the center of the wafer mark is vertically intersected at the center of the calibration wafer.
In one embodiment, the step of obtaining the position offset of the calibration wafer according to the position relationship between the lithography pattern and the edge of the calibration wafer further includes:
acquiring a second photoetching pattern Y1 in the photoetching patterns at the junction of the Y axis and the calibration wafer;
acquiring the position offset of the calibration wafer in the Y-axis direction according to the distance between the second photoetching pattern Y1 and the edge of the calibration wafer in the Y-axis direction;
and the Y axis is a connecting line of the center of the calibration wafer and the center of the wafer mark.
In one embodiment, the lithography patterns are respectively located on two sides of the X axis and/or two sides of the Y axis.
In one embodiment, the second direction is parallel to the Y-axis or the second direction is parallel to the X-axis.
The calibration method of the loading position of the exposure machine uses the photoetching plate comprising the marking pattern for carrying out loading position calibration on the calibration wafer, and comprises the following steps: obtaining a calibration wafer with photoresist; aligning and placing the calibration wafer in an exposure machine according to the feeding parameters; exposing the photoresist in the edge area of the calibration wafer by using the photoetching plate, and forming a plurality of photoetching patterns on the calibration wafer after developing; and acquiring the position offset of the calibration wafer according to the position relation between the photoetching pattern and the edge of the calibration wafer. According to the method, after exposure development is carried out on photoresist in the edge area of the calibration wafer by using the photoetching plate, a plurality of photoetching patterns are formed on the calibration wafer, the position offset of the calibration wafer can be obtained according to the position relation between the photoetching patterns and the edge of the calibration wafer, and then the position correction of the feeding position of the exposure machine is carried out, so that the photoetching patterns formed on the radius of the calibration wafer are aligned with the edge of the calibration wafer in the first direction and the second direction, the difference between the actual position of the photoetching patterns formed on the calibration wafer after exposure and the theoretical position of the photoetching patterns (namely the edge of the calibration wafer) is eliminated, and product scrapping caused by wafer position offset is reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a pattern of marks on a reticle provided in one embodiment;
FIG. 2 is a schematic view of a pattern of marks on a reticle provided in another embodiment;
FIG. 3 is a schematic flowchart illustrating a method for calibrating a loading position of an exposure machine according to an embodiment;
FIG. 4 is a schematic flow chart illustrating an embodiment of obtaining the position offset of the calibration wafer according to the position relationship between the lithographic pattern and the edge of the calibration wafer;
FIG. 5 is a schematic diagram illustrating a top view of a calibration wafer after forming a lithographic pattern thereon in one embodiment;
FIG. 6 is a partially enlarged view of the edge portion of the calibration wafer and the lithographic pattern 202 of FIG. 5;
FIG. 7 is a partially enlarged view of the edge portion of the calibration wafer and the lithographic pattern 204 of FIG. 5.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and/or sections, these elements, components, regions, layers, doping types and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or section from another element, component, region, layer, doping type or section. Thus, a first element, component, region, layer, doping type or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention; for example, the first doping type may be made the second doping type, and similarly, the second doping type may be made the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.
Spatial relational terms, such as "under," "below," "under," "over," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, in this specification, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention, such that variations from the shapes shown are to be expected, for example, due to manufacturing techniques and/or tolerances. Thus, embodiments of the invention should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing techniques. For example, an implanted region shown as a rectangle will typically have rounded or curved features and/or implant concentration gradients at its edges rather than a binary change from implanted to non-implanted region. Also, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is performed. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present invention.
In a conventional Canon exposure machine, a calibration sheet (gold wafer) of the exposure machine is used to calibrate an exposure position, specifically: after the position of the loading position is corrected by a V-shaped groove (Nocth) on the goldenwafer, the goldenwafer is conveyed to a bearing table, then the position of the wafer on the bearing table is adjusted according to the deviation between the actual coordinate and the preset coordinate of the calibration photoetching pattern on the goldenwafer, namely the loading position of an exposure machine is adjusted until the actual coordinate of the calibration photoetching pattern on the goldenwafer is equal to the preset coordinate, the position of the goldenwafer on the bearing table is the exposure position of the exposure process, the loading position of the exposure machine is the actual loading position of the exposure process, and the corresponding loading parameter is a standard loading parameter. When the exposure process of the calibration wafer is carried out, after the position correction is carried out on a V-shaped groove (Nocth) on the calibration wafer at the loading position, the calibration wafer is transmitted to a bearing platform by standard loading parameters to carry out the exposure process to form a photoetching pattern.
The position of the calibration photoetching pattern on the gold wafer directly influences the acquired standard feeding parameters, and further influences the actual position of the photoetching pattern formed on the calibration wafer, when the position of the standard photoetching pattern is abnormal, an accurate exposure position cannot be obtained, the actual position of the photoetching pattern formed on the calibration wafer deviates from the preset position, and further the product is scrapped.
As shown in fig. 1, in one embodiment, a reticle is provided, including a marking pattern 100 for loading position calibration on a calibration wafer, comprising:
a plurality of columns of first patterns 102 along a first direction;
a plurality of rows of first patterns 102 along a second direction, the second direction being mutually perpendicular to the first direction;
at least one of the four corners 104 of the mark pattern 100 has no first pattern 102, and the length M of the mark pattern 100 along the first direction and the length N of the mark pattern 100 along the second direction are both divisible by the radius of the calibration wafer.
More than 2 lithographic patterns, such as 8, 10, 12, etc., may be formed on the diameter of the calibration wafer using the mark pattern 100 on the reticle.
In one embodiment, the four corners 104 of the marking pattern 100 are devoid of the first pattern 102. That is, the first pattern 102 is not disposed at the four corners 104 of the mark pattern 100, the boundary of the lithography pattern formed on the calibration wafer by the mark pattern can be directly obtained by the corners 104 without the first pattern 102 on the mark pattern 100, the position offset of the calibration wafer in the first direction and the second direction can be obtained according to the distance between the lithography pattern formed on the diameter of the calibration wafer in the first direction and the second direction and the edge of the calibration wafer, the position of the calibration wafer is corrected by the obtained position offset, the difference between the actual position of the lithography pattern formed on the wafer after exposure and the theoretical position of the lithography pattern is eliminated, and the rejection of the product caused by the position offset of the wafer is reduced.
In one embodiment, at least two corners 104 of the four corners 104 of the marking pattern 100 are free of the first pattern 102, wherein at least two corners 104 free of the first pattern 102 are opposite corners of the marking pattern 100.
In one embodiment, the first pattern 102 comprises at least one of a rectangle, a triangle, a circle, and an oval. For example, the first graphic 102 may be a square, rectangle, right triangle, equilateral triangle, and the like. In practical application, the shape of the first pattern on the reticle can be set according to requirements.
In one embodiment, M is not less than 10 mm and not more than 26 mm, and N is not less than 10 mm and not more than 33 mm.
In one embodiment, M is not less than 10 mm and not more than 33 mm, and N is not less than 10 mm and not more than 26 mm.
In one embodiment, neither M nor N is less than 10 millimeters. The numerical values of M and N are related to the size of the calibration wafer, when the M and N are too large, the photoetching pattern formed on the radius of the calibration wafer is too small, the distance between the photoetching pattern and the edge of the calibration wafer cannot be accurately judged, when the M and N are too small, the photoetching pattern located at the diameter of the notch of the calibration wafer cannot be accurately judged, the judgment of the distance between the photoetching pattern and the edge of the calibration wafer is further influenced, and the test calibration precision is further influenced. In practical application, the values of M and N can be adjusted according to the requirements of the radius size and the test precision of the calibration wafer, and the total number of the lithography patterns formed on the radius of the calibration wafer by the reticle can be adjusted by adjusting the values of M and N.
In one embodiment, M and N are equal. For example, the calibration wafer is an 8-inch wafer, and M and N are both 20 mm or M and N are both 10 mm.
In one embodiment, the width of the first pattern 102 in the first direction is L1, the distance between two adjacent columns of the first patterns 102 is D1, the width of the first pattern 102 in the second direction is L2, the distance between two adjacent rows of the first patterns 102 is D2, and the widths L1 and L2 and the distances D1 and D2 are all less than or equal to a preset precision;
wherein, the length M of the mark pattern 100 along the first direction is an integral multiple of the sum of the width L1 and the distance D1, and the length N of the mark pattern 100 along the second direction is an integral multiple of the sum of the width L2 and the distance D2.
The widths L1 and L2 of the first patterns 102 in the mark pattern 100 on the reticle and the distances D1 and D2 between adjacent first patterns are all less than or equal to a preset precision, where the preset precision refers to a calibration precision that can be obtained when a calibration wafer is used for exposure calibration, that is, a deviation between an actual position of the acceptable calibration wafer and a preset position.
In one embodiment, as shown in fig. 2, the widths L1 and L2 are equal, the distances D1 and D2 are equal, the mark patterns 100 are square, i.e., the first pattern 102 is square, and the number of rows and columns of the mark patterns 100 are the same.
In one embodiment, the widths L1 and L2 are not equal, and/or the spacings D1 and D2 are not equal, and the indicia graphic 100 is rectangular.
Taking the mark pattern 100 in fig. 2 as an example, a manner of obtaining a deviation between an actual position and a preset position of a calibration wafer by a reticle in the present application is described, assuming that the mark pattern 100 on the reticle includes a row a and a column a of first patterns 102, distances D1 and D2 between adjacent first patterns 102 are both B, a width L1 of the first pattern 102 along a first direction is L, a width L2 of the first pattern 102 along a second direction is L ', preferably, L is equal to L ', assuming that after exposure is performed with standard coordinates, the mark pattern 100 forms a plurality of lithography patterns on the calibration wafer, the lithography patterns are distributed from an edge to a center along a radius R of the calibration wafer in the first direction, and the lithography patterns are distributed from an edge to a center along a radius R ' of the calibration wafer in the second direction; forming a plurality of photoetching patterns corresponding to the mark patterns 100 on the calibration wafer through the mark patterns 100 on the photoetching plate, wherein the photoetching patterns are formed by a plurality of first photoetching patterns, the first photoetching patterns are not formed at four corners of the photoetching patterns, the first photoetching patterns correspond to the first patterns 102 in the mark patterns 100, the first photoetching patterns formed near the edge position of the calibration wafer corresponding to the first direction radius R and the second direction radius R' are respectively confirmed, and then the position relation between the photoetching patterns near the edge position of the calibration wafer and the edge position of the calibration wafer is obtained, and then the position offset between the actual position of the calibration wafer and the preset position (namely the position of the edge of the calibration wafer) is obtained according to the position relation between the photoetching patterns near the edge position of the calibration wafer and the edge position of the calibration wafer. In practical applications, the position offset between the actual position of the calibration wafer and the preset position (i.e., the position of the edge of the calibration wafer) can be obtained in various different manners, for example, according to the position relationship between the actual position of the lithographic pattern on the edge of the calibration wafer and the edge of the calibration wafer on the first direction radius R and the second direction radius R', the position offset of the lithographic pattern in the first direction and the position offset of the lithographic pattern in the second direction are respectively obtained. For example, the number of missing spaces D1 and the number of missing first lithography patterns of the lithography pattern between the actual position of the lithography pattern on the radius R in the first direction and the edge of the calibration wafer, the number of missing spaces D2 and the number of missing first lithography patterns of the lithography pattern between the actual position of the lithography pattern on the radius R' in the second direction and the edge of the calibration wafer may be estimated, and further, the positional deviation between the actual position of the lithography pattern in the first direction and the second direction of the edge of the calibration wafer, that is, the positional deviation between the actual position of the calibration wafer and the preset position may be estimated based on the number of missing spaces D1 and D2, the number of missing first lithography patterns, the width L of the first pattern 102 in the first direction, the width L of the first pattern 102 in the second direction, and the space B between the first patterns 102.
The photoetching plate comprises a mark pattern for carrying out loading position calibration on a calibration wafer, wherein the mark pattern comprises a plurality of columns of first patterns along a first direction and a plurality of rows of first patterns along a second direction, at least one of four corners of the mark pattern has no first pattern, the first direction and the second direction are mutually vertical, and the length M of the mark pattern along the first direction and the length N of the mark pattern along the second direction can be evenly divided by the radius of the calibration wafer. The method comprises the steps of forming a photoetching pattern corresponding to the marking pattern from the edge of a calibration wafer inwards along the radius parallel to the first direction and the second direction on the calibration wafer through the marking pattern comprising a plurality of columns of first patterns along the first direction and a plurality of rows of first patterns along the second direction vertical to the first direction on the photoetching plate, wherein the length M of the marking pattern along the first direction and the length N of the marking pattern along the second direction can be known by the radius of the calibration wafer, an integral number of photoetching patterns can be formed on the radius of the calibration wafer, the boundary of the photoetching pattern can be obtained according to at least one corner of the four corners of the marking pattern without the first pattern, and the position deviation of the calibration wafer in the first direction and the second direction can be obtained according to the distance between the actual position and the preset position (the position of the edge of the calibration wafer) of the photoetching pattern formed on the radius of the calibration wafer in the first direction and the second direction, and further carrying out position correction to enable the photoetching pattern formed on the radius of the calibration wafer to be aligned with the edge of the calibration wafer in the first direction and the second direction, eliminating the difference between the actual position of the photoetching pattern formed on the calibration wafer after exposure and the theoretical position of the photoetching pattern (namely the edge of the calibration wafer), and achieving the purpose of reducing product scrappage caused by wafer position offset.
In one embodiment, as shown in fig. 3, there is provided a calibration method for a loading position of an exposure machine, the calibration method using the reticle set according to any one of the above, comprising:
and S102, acquiring the calibration wafer with the photoresist.
In one embodiment, the calibration wafer comprises one of a silicon wafer, a germanium-silicon wafer, a silicon carbide wafer, and a gallium arsenide wafer. In other embodiments, the calibration wafer may also be a wafer made of other semiconductor materials, which is not illustrated here.
In one embodiment, the calibration wafer comprises one of an 8-inch wafer and a 12-inch wafer.
And S104, aligning and placing the calibration wafer in an exposure machine according to the loading parameters.
The exposure machine aligns and places the calibration wafer on the loading position in the exposure machine (a bearing table of the exposure machine) according to loading parameters, wherein the loading parameters refer to parameters related to the exposure position for placing the wafer in the exposure machine from the loading position, the loading action of the wafer is carried out according to the parameters, and after the loading position is aligned according to a wafer notch (notch), the wafer is placed on the exposure position in the exposure machine through the loading parameters.
And S106, forming a plurality of photoetching patterns on the calibration wafer.
And exposing the photoresist in the edge area of the calibration wafer by using the photoetching plate according to the standard coordinates, and forming a plurality of photoetching patterns on the calibration wafer after developing. Or using the photoetching plate to carry out whole-wafer exposure on the calibration wafer, namely, exposing all the photoresist on the calibration wafer, and forming a plurality of photoetching patterns on the calibration wafer after developing.
And S108, acquiring the position offset of the calibration wafer according to the position relation between the photoetching pattern and the edge of the calibration wafer.
In one embodiment, step S108 is followed by: and calibrating the feeding parameters according to the position deviation to obtain standard feeding parameters for feeding the process wafer. Through the calibration of the feeding parameters, the process wafer can be adjusted from the feeding position to the actual exposure position in the exposure machine, so that the purposes of eliminating the difference between the actual position and the theoretical position of the photoetching pattern formed on the calibration wafer after exposure and reducing product scrap caused by wafer position offset are achieved. The process wafer refers to a wafer actually used for preparing a product.
After forming a photoetching pattern on the calibration wafer through the photoetching plate, the photoetching pattern comprises a first photoetching pattern formed by the first pattern and a second photoetching pattern formed by the corner without the first pattern.
As shown in fig. 4 and 5, in one embodiment, step S108 includes:
s202, a second photoetching pattern X1 in the photoetching patterns at the junction of the X axis and the calibration wafer is obtained.
The photoetching patterns formed on the calibration wafer through the photoetching plate comprise first photoetching patterns corresponding to the first patterns in the marking patterns and second photoetching patterns corresponding to corners of the marking patterns, wherein the first patterns are not arranged. The boundaries of the respective lithographic patterns formed on the calibration wafer may be determined from the second lithographic pattern, the position of the X-axis may be determined from the lithographic patterns formed on the calibration wafer, e.g., the position of the lithographic pattern furthest from the edge of the calibration wafer is on the X-axis, the lithographic pattern is symmetrical about the X-axis in a direction perpendicular to the X-axis, etc. A first lithographic pattern 202 is acquired near the interface of the X-axis and the calibration wafer, and then a second lithographic pattern X1 is acquired in the first lithographic pattern 202.
S204, acquiring the position offset of the calibration wafer in the X-axis direction according to the distance between the second photoetching pattern X1 and the edge of the calibration wafer in the X-axis direction.
Specifically, the position offset of the calibration wafer in the X-axis direction is obtained according to the distance between the second lithography pattern X1 in the lithography pattern 202 and the edge of the calibration wafer in the X-axis direction. And the connecting line of the X axis and the center of the calibration wafer and the center of the wafer mark is vertically intersected at the center of the calibration wafer. The wafer mark center refers to a center point of a wafer mark of the calibration wafer, and the wafer mark refers to a mark indicating a crystal direction on the calibration wafer, i.e., a Flat groove (Flat) or a V groove (Notch) at an edge of the wafer.
In another embodiment, the X-axis is the line connecting the center of the calibration wafer and the center of the wafer mark, and is identified by the Y-axis in fig. 5 and 7. Specifically, a first lithography pattern 204 located near the intersection of the Y-axis and the calibration wafer is acquired, and then a second lithography pattern Y1 in the lithography pattern 204 is acquired. And acquiring the position offset of the calibration wafer in the Y-axis direction according to the distance between the second photoetching pattern Y1 in the photoetching pattern 204 and the edge of the calibration wafer in the Y-axis direction.
The edges of the calibration wafer corresponding to the lithography patterns 202 and 204 in fig. 6 and 7 are shown as straight lines, but actually, the edges of the calibration wafer are circular arc-shaped and are enlarged to be close to straight lines. If the offset of the calibration wafer in the X direction and the Y direction is zero, the X axis and the Y axis are both located on the middle line of the two second photoetching patterns, G and G 'are coincident, H and H' are coincident, the boundary of the second photoetching pattern in the X/Y axis direction is parallel to the tangent of the nearest calibration wafer edge, and the boundary of the second photoetching pattern in the rest position is not parallel to the tangent of the nearest calibration wafer edge, so that the second photoetching pattern can be quickly positioned to the X/Y axis. If the position in the X direction is deviated, the distance between H and H' is the deviation amount in the X-axis direction, at this time, the boundary of the second photoetching pattern which should be in the Y-axis direction is not parallel to the tangent line of the edge of the nearest calibration wafer due to deviation, but can be regarded as almost parallel in the normal deviation range, so that the second photoetching pattern which is nearest to the Y-axis can be quickly found; if the Y-direction position is shifted, the same is true.
As illustrated below with the mark pattern of fig. 2 on the reticle, the lithography pattern formed on the calibration wafer by the mark pattern 100 after exposure development includes: a first lithography pattern formed on the calibration wafer by the first pattern 102 and a second lithography pattern formed on the calibration wafer by the four corners 104 of the marker pattern 100 where the first pattern 102 is not disposed, wherein either one of the first lithography pattern and the second lithography pattern is a pattern formed by a resist-remaining region and the other is a pattern formed by a resist-removed region.
As shown in fig. 5, the following steps of obtaining the position offset of the calibration wafer are illustrated, where the wafer mark of the calibration wafer faces upward, and assuming that, in two boundary points G and I between the X axis and the calibration wafer, no lithographic pattern is distributed in a partial area near the boundary point G on the left side of the center of the circle of the calibration wafer, the distance between the boundary point G and the lithographic pattern is longest, and an incomplete lithographic pattern is distributed near the boundary point I on the right side of the center of the circle of the calibration wafer; in two boundary points H and J of the Y axis and the calibration wafer, photoetching graphs are not distributed in a partial area near the boundary point H of the wafer mark position of the calibration wafer, the distance between the boundary point H and the photoetching graphs is longest, and incomplete photoetching graphs are distributed near the boundary point J of the calibration wafer. In fig. 5, the first complete lithography pattern 202 and lithography pattern 204 of the calibration wafer on both sides of the X-axis and Y-axis near the intersection point G and the intersection point H are shown. As shown in fig. 6, in the X-axis direction, the intersection point G is an intersection point of the X-axis and the calibration wafer boundary, and the lithography pattern 202 located at the intersection of the X-axis and the calibration wafer includes: a first lithographic pattern 302 and a second lithographic pattern 304, the lithographic pattern 204 at the intersection of the Y-axis and the calibration wafer comprising: a first lithographic pattern 402 and a second lithographic pattern 404. As shown in fig. 6, the position offset of the calibration wafer in the X-axis direction (i.e. the distance E) is obtained as the position offset of the calibration wafer in the X-axis direction according to the distance between the second lithography pattern 304 and the edge G' of the calibration wafer in the X-axis direction. According to the distance between the second lithography pattern 404 and the edge H' of the calibration wafer in the Y-axis direction, the position offset (i.e., the distance F) of the calibration wafer in the Y-axis direction is obtained, i.e., the position offset of the calibration wafer in the Y-axis direction is obtained.
In one embodiment, the second direction is parallel to the Y-axis.
In one embodiment, the second direction is parallel to the X-axis.
In one embodiment, the lithography patterns are respectively located on two sides of the X-axis and two sides of the Y-axis. At this time, the position of the lithography pattern formed on the calibration wafer in both the X-axis direction and the Y-axis direction is not shifted.
In one embodiment, the calibration wafer is an 8-inch wafer, 10 lithography patterns are distributed on the radius of the calibration wafer, and the lengths M and N of the mark patterns on the lithography plate forming the lithography patterns are both 10 millimeters.
In one embodiment, the lithographic pattern is located on both sides of the X-axis. At this time, the position of the lithography pattern formed on the calibration wafer in the Y-axis direction is not shifted.
In one embodiment, the lithographic pattern is located on both sides of the Y-axis. At this time, the position of the lithography pattern formed on the calibration wafer in the X-axis direction is not shifted.
The calibration method for the loading position of the exposure machine uses the photoetching plate comprising the mark pattern for carrying out exposure calibration on the calibration wafer, and comprises the following steps: obtaining a calibration wafer with photoresist; exposing and developing the photoresist on the edge of the calibration wafer by using the photoetching plate, and forming a plurality of photoetching patterns on the calibration wafer; and acquiring the position offset of the calibration wafer according to the position relation between the photoetching pattern and the edge of the calibration wafer. According to the method, after exposure development is carried out on photoresist in the edge area of the calibration wafer by using the photoetching plate, a plurality of photoetching patterns are formed on the calibration wafer, the position offset of the calibration wafer can be obtained according to the position relation between the photoetching patterns and the edge of the calibration wafer, and then the position correction of the feeding position of the exposure machine is carried out, so that the photoetching patterns formed on the radius of the calibration wafer are aligned with the edge of the calibration wafer in the first direction and the second direction, the difference between the actual position and the theoretical position of the photoetching patterns formed on the calibration wafer after exposure is eliminated, and the purpose of reducing product scrapping caused by wafer position offset is achieved.
It should be understood that, although the steps in the flowchart of fig. 4 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a portion of the steps in fig. 4 may include multiple steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, which are not necessarily performed in sequence, but may be performed in turn or alternately with other steps or at least a portion of the other steps or stages.
In the description herein, references to the description of "some embodiments," "other embodiments," "desired embodiments," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, a schematic description of the above terminology may not necessarily refer to the same embodiment or example.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features of the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (11)
1. A reticle comprising a marking pattern for loading position calibration of a calibration wafer, the marking pattern comprising:
a plurality of columns of first patterns along a first direction;
a plurality of rows of a first pattern along a second direction, the second direction being mutually perpendicular to the first direction;
at least one of four corners of the mark pattern has no first pattern, the length M of the mark pattern along the first direction and the length N of the mark pattern along the second direction can be evenly divided by the radius of the calibration wafer, the width of the first pattern along the first direction is L1, the distance between two adjacent columns of first patterns is D1, the width of the first pattern along the second direction is L2, the distance between two adjacent rows of first patterns is D2, the widths L1 and L2, and the distances D1 and D2 are all smaller than or equal to a preset precision, the length M of the mark pattern along the first direction is an integral multiple of the sum of the width L1 and the distance D1, and the length N of the mark pattern along the second direction is an integral multiple of the sum of the width L2 and the distance D2.
2. The reticle of claim 1, wherein none of the four corners of the pattern of marks comprises the first pattern.
3. The reticle of claim 1, wherein the first pattern comprises at least one of a rectangle, a triangle, a circle, and an oval.
4. The reticle of claim 1, wherein neither M nor N is less than 10 millimeters.
5. The reticle of claim 1, wherein the widths L1 and L2 are equal, the spacings D1 and D2 are equal, and the mark patterns are square.
6. A calibration method for a loading position of an exposure machine, wherein the calibration method uses the reticle set according to any one of claims 1 to 5, the calibration method comprising:
obtaining a calibration wafer with photoresist;
aligning and placing the calibration wafer in an exposure machine according to the feeding parameters;
exposing the photoresist in the edge area of the calibration wafer by using the photoetching plate, and forming a plurality of photoetching patterns on the calibration wafer after developing;
and acquiring the position offset of the calibration wafer according to the position relation between the photoetching pattern and the edge of the calibration wafer.
7. The calibration method of claim 6, further comprising:
and calibrating the feeding parameters according to the position deviation to obtain standard feeding parameters for feeding the process wafer.
8. The calibration method according to claim 6, wherein the lithography patterns include a first lithography pattern formed by a first pattern and a second lithography pattern formed by a corner where the first pattern is not provided, and the step of acquiring the positional deviation of the calibration wafer according to the positional relationship between the lithography pattern and the edge of the calibration wafer includes:
acquiring a second photoetching pattern X1 in the photoetching pattern at the junction of the X axis and the calibration wafer;
acquiring the position offset of the calibration wafer in the X-axis direction according to the distance between the second photoetching pattern X1 and the edge of the calibration wafer in the X-axis direction;
and the connecting line of the X axis and the center of the calibration wafer and the center of the wafer mark is vertically intersected at the center of the calibration wafer.
9. The calibration method according to claim 8, wherein the step of obtaining the position offset of the calibration wafer according to the position relationship between the lithography pattern and the edge of the calibration wafer further comprises:
acquiring a second photoetching pattern Y1 in the photoetching patterns at the junction of the Y axis and the calibration wafer;
acquiring the position offset of the calibration wafer in the Y-axis direction according to the distance between the second photoetching pattern Y1 and the edge of the calibration wafer in the Y-axis direction;
and the Y axis is a connecting line of the center of the calibration wafer and the center of the wafer mark.
10. The calibration method according to claim 9, wherein the lithography pattern is located on both sides of the X-axis and/or on both sides of the Y-axis, respectively.
11. The calibration method according to claim 9, wherein the second direction is parallel to the Y-axis or the second direction is parallel to the X-axis.
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