CN104932048A - Optical element - Google Patents
Optical element Download PDFInfo
- Publication number
- CN104932048A CN104932048A CN201510121666.7A CN201510121666A CN104932048A CN 104932048 A CN104932048 A CN 104932048A CN 201510121666 A CN201510121666 A CN 201510121666A CN 104932048 A CN104932048 A CN 104932048A
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- China
- Prior art keywords
- film
- photomask
- light
- optical element
- glass baseplate
- Prior art date
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- 230000003287 optical effect Effects 0.000 title claims abstract description 41
- 239000011521 glass Substances 0.000 claims abstract description 98
- 238000005530 etching Methods 0.000 claims description 21
- 238000004806 packaging method and process Methods 0.000 claims description 15
- 238000002834 transmittance Methods 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- DWYMPOCYEZONEA-UHFFFAOYSA-L fluoridophosphate Chemical compound [O-]P([O-])(F)=O DWYMPOCYEZONEA-UHFFFAOYSA-L 0.000 claims description 6
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 abstract description 20
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 5
- 239000007787 solid Substances 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 230000000452 restraining effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 158
- 239000011651 chromium Substances 0.000 description 59
- 238000000034 method Methods 0.000 description 40
- 230000015572 biosynthetic process Effects 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 22
- 239000010949 copper Substances 0.000 description 11
- 238000000059 patterning Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000008676 import Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000005457 optimization Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910019923 CrOx Inorganic materials 0.000 description 1
- 229910019966 CrOxNy Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical class [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
- G02B5/282—Interference filters designed for the infrared light reflecting for infrared and transparent for visible light, e.g. heat reflectors, laser protection
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
Abstract
The invention provides an optical element and belongs to the field of optical elements. The invention mainly solves the technical problem of poor connection sealing property between a transparent substrate and a shading part. The optical element is used for a camera device internally provided with a solid image pickup element. The optical element comprises a glass base material, a shading film and an anti-reflection film. The glass base material comprises an incident surface which light enters and an emitting surface through which light reaching the incident surface passes; light is emitted to the solid image pickup element after passing through the emitting surface. The frame-shaped shading film blocking part of the light is formed on at least one of the incident surface and the emitting surface. The anti-reflection film is formed in a manner of covering the shading film and the opening portion of the shading film. The anti-reflection film is used for restraining the reflection of incident light and/or emitted light. The anti-reflection film comprises a transmitting part covering the opening portion of the shading film and a shading part covering the frame-shaped periphery of the shading film. The connection sealing property of the optical element and the transparent substrate is good and the reflectivity is low.
Description
Technical field
The present invention relates to a kind of optical element; be the optical element be configured in before solid-state imager, before the packaging being particularly installed on storage solid-state imager, solid-state imager protected and is used as the cover plate of light inlet window, the optical element such as near infrared cut-off filters for the visibility correction of solid-state imager.
Background technology
In recent years, the camera assembly built with solid-state imagers such as CCD, CMOS is used to mobile phone, portable information terminal device etc.Such camera assembly possesses the pottery system of storage solid-state imager, resinous bucket shape packaging and is attached to the circumference of packaging and the cover plate sealed solid-state imager by ultraviolet-curing adhesive.
In addition, generally speaking, because solid-state imager has spectral sensitivity near ultraviolet ray region near infrared range, so possess the near infrared part of blocking-up incident light and carry out the camera assembly of the near infrared cut-off filters revised also for actual by the mode of the visibility close to people.In order to reduce the size of camera assembly entirety, also proposed the cover plate (such as, patent documentation 1) of the function and service of cover plate and near infrared cut-off filters.
The near infrared cut-off filters recorded in patent documentation 1 has: the transparent base (such as infrared absorbing glass) of tabular, the ultraviolet infrared light reflecting film be made up of dielectric multilayer-film being formed in the one side of transparent base, the antireflection film of another side being formed in transparent base.
In addition, if the opticses such as such near infrared cut-off filters are configured in (namely in light path) before solid-state imager, the light then reflected in the side of near infrared cut-off filters etc. incides the imaging surface of solid-state imager, cause the problem occurring flare, ghost image etc. thus, so in the near infrared cut-off filters recorded in patent documentation 1, propose the light shield layer (photomask) forming frame-shaped on ultraviolet infrared light reflecting film further, block the countermeasure of the light path of the light of the reason becoming ghost image etc.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2013-068688 publication
Summary of the invention
Invent problem to be solved
Thus, according to the near infrared cut-off filters recorded in patent documentation 1, the near infrared ray part of incident light can be cut off, and the light path becoming the light of the reason of ghost image etc. is blocked.
But, because the photomask of the near infrared cut-off filters recorded in patent documentation 1 is coated with light-cured resin on ultraviolet infrared light reflecting film,, so strong with the adhesion of transparent base, there is the problem peeled off because of used environment in the metal of the black such as evaporation Cr and being formed.
In addition, if the metal of the black such as evaporation Cr and form photomask, then can form very thin photomask, but cannot suppress the reflection at photomask place on the other hand, the light that photomask reflects becomes ghost image light, also occurs the problem of image quality deterioration.
The present invention implements in view of such problem, its object is to provide the optical element possessing light shielding part, and described light shielding part has the photomask high with the adhesion of transparency carrier, and reflectivity is extremely low.
To achieve these goals, optical element of the present invention is the optical element used in the camera head built with solid-state imager, comprise glass baseplate (transparency carrier), described glass baseplate possesses the exit facet towards the plane of incidence of the light incidence of solid-state imager and the light transmission inciding this plane of incidence towards solid-state imager outgoing, at least one side in the plane of incidence and exit facet is formed as frame-shaped and a photomask part for light covered, and with the antireflection film that the mode of the peristome covering photomask and photomask is formed; Described antireflection film is formed: limit suppresses that the light inciding the region of the peristome of photomask reflects, limit make its through transmittance section, and the light shielding part that light reflects, shading is carried out on limit to it in photomask region is incided in limit suppression.
According to such formation, photomask is formed directly on transparency carrier, so the adhesion of photomask is high.In addition, because photomask is covered by antireflection film, so extremely low at the reflectivity of light shielding part.
In addition, photomask is preferably formed by the film at least comprising Cr.In addition, in this case, photomask is preferably configured to comprise: the first film formed by Cr, by Cr
2o
3formed, be formed in the second film between the first film and transparency carrier, by Cr
2o
3formed, be formed in the 3rd film between the first film and antireflection film.In addition, in this case, the 3rd film is preferably connected with antireflection film, and the 3rd film thickness is 55 ~ 63nm.
In addition, the area of the sensitive surface of the area ratio solid-state imager of the transmittance section of preferred antireflection film is large.
In addition, described optical element be arranged on receive described solid-state imager packaging before, as cover plate.
In addition, transparency carrier is preferably the near-infrared ray absorption glass of the light of the wavelength in absorption near infrared ray region.In addition, in this case, preferred near-infrared ray absorption glass is by containing Cu
2+fluorophosphate system glass or containing Cu
2+phosphate-based glass to form.According to such formation, can revise by the mode of the spectral sensitivity of solid-state imager close to the visibility of people.
In addition, photomask is formed by etching.In addition, in this situation, between photomask and transparency carrier, preferably possesses the etch stop layer worked as the stop etched.According to such formation, form etch stop layer on the transparent substrate, so when the patterning techniques of the etchant that utilize lithographically, screen printing etc. is formed forms light shielding part, stop etching by etch stop layer, the surface of transparency carrier can not be carved by etching liquid corrosion.Therefore, the surface of transparency carrier can not be roughened, can prevent the at random of the light on the surface inciding transparency carrier, can obtain the high image of exploring degree by solid-state imager.In addition, because positively etching can be stoped by etch stop layer, so longly can be immersed in overall for optical element temporally in etching solution, can be formed without etch residue, light shielding part that edge is neat.
In addition, etch stop layer is preferably by SiO
2, Al
2o
3or ZrO
2film formed.
In addition, with light with reference to wavelength for λ time, the blooming of preferred etch stop layer is roughly λ/2.According to such formation, etch stop layer can not affect the performance of antireflection film, and the film design of antireflection film becomes easy.
In addition, the physical film thickness that can be configured to etch stop layer is 0.3 ~ 200.0ppm relative to the thickness of slab of transparency carrier.According to such formation, the membrane stress of etch stop layer can be suppressed to cause transparency carrier warpage.
In addition, the thickness of slab of preferably clear substrate is 0.1 ~ 1.0mm, and the physical film thickness of etch stop layer is 0.3 ~ 20.0nm.
As mentioned above, according to the present invention, realize the optical element possessing light shielding part, described light shielding part has the photomask high with the adhesion of transparency carrier and reflectivity is extremely low.
Accompanying drawing explanation
Fig. 1 is the key diagram of the formation of cover plate involved by the first embodiment of the present invention.
Fig. 2 is the longitudinal section of the formation of the solid-state image pickup device that the cover plate carried involved by embodiments of the invention 1 is described.
Fig. 3 is the figure of the wavelength characteristic of the reflectivity of the light shielding part of the cover plate represented involved by embodiments of the invention 1.
Fig. 4 is the process flow diagram of the manufacture method of the cover plate represented involved by embodiments of the invention 1.
Fig. 5 is the cover plate longitudinal section representing that embodiments of the invention 2 relate to.
Fig. 6 is the cover plate longitudinal section representing that embodiments of the invention 3 relate to.
Fig. 7 is the cover plate longitudinal section representing that embodiments of the invention 4 relate to.
Fig. 8 is the key diagram of the formation of the cover plate represented involved by embodiments of the invention 5.
Fig. 9 is the process flow diagram of the manufacture method of the cover plate represented involved by embodiments of the invention 5.
Figure 10 is the cover plate longitudinal section represented involved by embodiments of the invention 6.
Figure 11 is the cover plate longitudinal section represented involved by embodiments of the invention 7.
Figure 12 is the cover plate longitudinal section represented involved by embodiments of the invention 8.
Wherein, 1 solid-state image pickup device
100,100A cover plate
101 glass baseplates
The 101a plane of incidence
101b exit facet
103,106 etch stop layers
105,107 photomasks
105a, 105c Cr
2o
3film
105b Cr film
110,120 antireflection films
110a Al
2o
3film
110b ZrO
2film
110c MgF
2film
200 solid-state imagers
300 packagings
Embodiment
Referring to accompanying drawing, embodiments of the present invention are described in detail.Should illustrate, in figure, identical or corresponding part with identical symbol, not repeat specification.
Embodiment 1
Fig. 1 is the key diagram of the formation of cover plate 100 (optical element) involved by embodiments of the invention 1, Fig. 1 (a) is the planimetric map of cover plate 100, Fig. 1 (b) is longitudinal section, and Fig. 1 (c) is the key diagram that the film of the photomask 105 and antireflection film 110 formed on cover plate 100 is formed.In addition, Fig. 2 is the longitudinal section illustrating that in present embodiment, solid-state image pickup device 1 is formed, and the peristome of the packaging 300 of solid-state imager 200 is sealed by cover plate 100.(i.e. peristome) (Fig. 2) before the packaging 300 that the cover plate 100 of present embodiment is mounted in storage solid-state imager 200, protects solid-state imager 200, and as the optical element of light inlet window.
As shown in Figure 1, the rectangular tabular outward appearance of cover plate 100 of present embodiment, is made up of glass baseplate 101 (transparency carrier), the photomask 105 being formed in the frame-shaped on glass baseplate 101, the antireflection film 110 that formed in the mode of the peristome covering photomask 105 and photomask 105.Should illustrate, in the present embodiment, photomask 105 and antireflection film 110 are formed in the one side (surface on the upside of in Fig. 1 (b)) of glass baseplate 101, when cover plate 100 is installed in packaging 300, this face becomes the plane of incidence 101a towards the light incidence of solid-state imager 200, and another side (surface on the downside of in Fig. 1 (the b)) side of glass baseplate 101 becomes the exit facet 101b of the light outgoing inciding plane of incidence 101a.Should illustrate, the size of cover plate 100 suitably sets according to the size of the packaging 300 of installation cover plate 100, is set to 6mm (transverse direction) × 5mm (longitudinal direction) in the present embodiment.
The glass baseplate 101 of present embodiment is containing Cu
2+infrared absorbing glass (containing Cu
2+fluorophosphate system glass or containing Cu
2+phosphate-based glass).Generally speaking, fluorophosphate system glass has excellent against weather, by adding Cu in glass
2+, can at the simultaneously stability near infrared ray of the high permeability of maintenance visible domain.So, if glass baseplate 101 is configured in the light path of the incident light of solid-state imager 200, then work as a kind of low-pass filter, revise close to the mode of the visibility of people by the spectral sensitivity of solid-state imager 200.Should illustrate, the fluorophosphate system glass used in the glass baseplate 101 of present embodiment can use known glass to form, but is particularly preferably containing Li
+, alkaline-earth metal ion (such as Ca
2+, Ba
2+deng), rare earth element ion (Y
3+, La
3+deng) composition.In addition, the thickness of the glass baseplate 101 of present embodiment is not particularly limited, and from the viewpoint of realizing small, light, is preferably the scope of 0.1 ~ 1.0mm.
Photomask 105 is evaporation Cr on glass baseplate 101 (chromium) and Cr
2o
3the multilayer film of (chromium oxide) is (below also by Cr and Cr
2o
3multilayer film be called " Cr multilayer film "), there is the function of the unnecessary light removing covering a part for the incident light inciding plane of incidence 101a, will become the reason of ghost image etc.When vertical transparency base material 101, photomask 105 along glass baseplate 101 outer formation frame-shaped formed.Should illustrate, the photomask 105 (namely, Cr multilayer film) of present embodiment is designed to have at least the incident light efficient covering wavelength 420 ~ 680nm, as shown in Fig. 1 (c), the Cr of blooming roughly λ/4 (λ be with reference to wavelength: 520nm)
2o
3the Cr of film 105a, blooming roughly the Cr film 105b of λ/2, blooming roughly λ/4 (physical film thickness: 55 ~ 63nm)
2o
3photomask 105 patterning, on glass baseplate 101, is only formed (details are aftermentioned) by follow-up photoetching process by film 105c stacked above one another.
Antireflection film 110 is optical thin films that the mode of the peristome covering photomask 105 and photomask 105 is formed, and has the reflection that suppresses to be incided the incident light of the wavelength 420 ~ 680nm of the plane of incidence 101a of glass baseplate 101 by the peristome of photomask 105 and suppresses to incide the function of the reflection of the incident light of the wavelength 420 ~ 680nm of photomask 105.As shown in Fig. 1 (c), the antireflection film 110 of present embodiment is by the Al of blooming roughly λ/4
2o
3the ZrO of film 110a, blooming roughly λ/2 (λ be with reference to wavelength: 520nm)
2the MgF of film 110b, blooming roughly λ/4
2film 110c is formed, and each film is formed by the stacked above one another such as sputtering method, vacuum vapour deposition.Thus, if Al
2o
3film 110a, ZrO
2film 110b, MgF
2film 110c is formed on photomask 105 in turn, then from the reflected light at the interface of each film with (be specifically Cr film 105b and Cr from photomask 105
2o
3film 105c) reflected light interfere and cancel each other out, so the reflection of incident light is suppressed.In addition, if Al
2o
3film 110a, ZrO
2film 110b, MgF
2film 110c is formed in the peristome of photomask 105 in turn, then from the interface of each film reflected light and interfere from the reflected light of the plane of incidence 101a of glass baseplate 101 and cancel each other out, so the reflection of incident light is suppressed.
If antireflection film 110 is formed in the mode of the peristome covering photomask 105 and photomask 105, then as shown in Figure 1, in the region of the peristome of photomask 105, form the transmittance section T that inhibitory reflex limit, limit makes incident light transmission, in the region of photomask 105, form the light shielding part S that the light of incidence covers by inhibitory reflex limit, limit.If arrange antireflection film 110 on cover plate 100, then suppressed in the reflection of transmittance section T, so the importing efficiency of light raises in solid-state imager 200.In addition, because suppressed in the reflection of light shielding part S, so it is also suppressed to result from the appearance of ghost image light of reflected light.
Thus, the antireflection film 110 of present embodiment has the function suppressing to incide the reflection of the incident light of the wavelength 420 ~ 680nm of transmittance section T and the function suppressing to incide the reflection of the incident light of the wavelength 420 ~ 680nm of light shielding part S concurrently, but because the refractive index of glass baseplate 101 is different with the refractive index of photomask 105, so be antireflection film 110 and the photomask 105 of simple combinatorial optimization, be difficult to realize two kinds of functions simultaneously.In the present embodiment, by the Cr using the superiors' (layer namely, connected with antireflection film 110) as photomask 105
2o
3the thickness of film 105c coordinates antireflection film 110 optimization, realizes two functions simultaneously.
Fig. 3 is the analog result of the wavelength characteristic of the reflectivity R of the light shielding part S representing present embodiment, by the superiors of photomask 105, i.e. Cr
2o
3the thickness t (physical film thickness) of film 105c changes in the scope of 48 ~ 69nm, provides the wavelength characteristic of the reflectivity R at each thickness t place in the lump.Should illustrate, in Fig. 3, transverse axis represents wavelength (nm), and the longitudinal axis represents reflectivity R (%).
As shown in Figure 3, the wavelength characteristic of the reflectivity R of light shielding part S and the Cr as the superiors of photomask 105
2o
3the thickness t of film 105c is different, the reflectivity R at each thickness t place shows at low wavelength domain (wavelength is lower than the wavelength domain of 520nm) and high wavelength domain (wavelength is higher than the wavelength domain of 570nm) tendency uprised, in addition, known wavelength characteristic is that reflectivity R is lower at high wavelength domain the higher person of low wavelength domain, and at high wavelength domain, higher person is lower at low wavelength domain.Herein, the curve of the desired wavelength characteristic of the reflectivity R of light shielding part S is preferably smooth in the scope of wavelength 420 ~ 680nm, and mean value is low.The present inventor etc. obtain the slope s of the average reflectance Rm of the reflectivity R within the scope of wavelength 420 ~ 680nm, standard deviation, regression straight line, and evaluate them, obtain the Cr of the most applicable present embodiment thus
2o
3the thickness t of film 105c.
Table 1 provides the wavelength characteristic of the reflectivity R at each thickness t place for Fig. 3, obtains the average reflectance Rm of wavelength 420 ~ 680nm, standard deviation, the result of slope s of regression straight line and the result evaluated this three parameters.
Table 1
| Cr 2O 3The thickness t (nm) of film 105c | Average reflectance Rm (%) | Standard deviation | The slope s of regression straight line | Evaluate |
| 48 | 3.82 | 3.13 | 0.040 | × |
| 49 | 3.36 | 2.84 | 0.036 | × |
| 50 | 2.95 | 2.55 | 0.032 | × |
| 51 | 2.59 | 2.27 | 0.028 | × |
| 52 | 2.27 | 1.99 | 0.024 | × |
| 53 | 2.00 | 1.73 | 0.020 | × |
| 54 | 1.78 | 1.48 | 0.016 | × |
| 55 | 1.60 | 1.25 | 0.013 | ○ |
| 56 | 1.45 | 1.05 | 0.009 | ◎ |
| 57 | 1.35 | 0.91 | 0.005 | ◎ |
| 58 | 1.28 | 0.83 | 0.002 | ◎ |
| 59 | 1.25 | 0.83 | -0.001 | ◎ |
| 60 | 1.25 | 0.91 | -0.005 | ◎ |
| 61 | 1.29 | 1.03 | -0.008 | ◎ |
| 62 | 1.35 | 1.19 | -0.011 | ○ |
| 63 | 1.44 | 1.35 | -0.014 | ○ |
| 64 | 1.55 | 1.52 | -0.016 | × |
| 65 | 1.69 | 1.68 | -0.019 | × |
| 66 | 1.85 | 1.84 | -0.021 | × |
| 67 | 2.04 | 2.00 | -0.023 | × |
| 68 | 2.24 | 2.14 | -0.026 | × |
| 69 | 2.45 | 2.28 | -0.027 | × |
Average reflectance Rm is the parameter of the average characteristics of the reflectivity R evaluated in wavelength 420 ~ 680nm scope, and its value is more little more preferred.In addition, standard deviation is the parameter of the difference of the reflectivity R evaluated in wavelength 420 ~ 680nm scope, and its value is more little more preferred.In addition, the slope s of regression straight line is the parameter of the flatness of the reflectivity R evaluated in wavelength 420 ~ 680nm scope, and its absolute value is more little more preferred.As the evaluation in present embodiment, by average reflectance Rm be less than 2%, standard deviation is less than 1.5, the slope s of regression straight line for less than ± 0.015 being preferably carry out evaluating (representing with " 〇 " mark in table 1), by average reflectance Rm be less than 1.5%, standard deviation is less than 1.2, the slope s of regression straight line be less than ± 0.01 is that preferred carrying out is evaluated (mark with " ◎ " in table 1 and represent).By the Cr of this result the most applicable known present embodiment
2o
3the thickness t of film 105c is 55 ~ 63nm, is more preferably 56 ~ 61nm.
Therefore, in present embodiment, as the Cr of the superiors of photomask 105
2o
3the thickness t of film 105c is set as 55 ~ 63nm, relative to antireflection film 110 optimization.
As shown in Figure 2, cover plate 100 is installed in the mode of the peristome clogging the bucket shape packaging 300 of the solid-state imagers 200 such as storage CCD (Charge-Coupled Device), CMOS (Complementary Metal Oxide Semiconductor), is fixed by bonding agent (not shown).If cover plate 100 is arranged in packaging 300, then be configured in the light path of the incident light inciding solid-state imager 200, but as mentioned above, cover plate 100 is formed light shielding part S, so to the incident unnecessary light of solid-state imager 200, ghost image, flare can not can not be there is.Should illustrate, the size of transmittance section T and light shielding part S suitably determines according to optical element, the size of solid-state imager 200 and the size of cover plate 100 such as lens in the outside being configured in solid-state image pickup device 1, but in order to allow the light through transmittance section T be accepted at the sensitive surface of solid-state imager 200, then the area of transmittance section T is at least configured to larger than the area of the sensitive surface of solid-state imager 200.
Next, the manufacture method of the cover plate 100 of present embodiment is described.Fig. 4 is the flow process of the manufacture method of the cover plate 100 represented involved by present embodiment.Fig. 4 (a) is the process flow diagram of the manufacturing process representing cover plate 100, Fig. 4 (b) is the enlarged plan view of the cover plate 100 corresponding to each manufacturing process, and Fig. 4 (c) is the enlarged section of the cover plate 100 corresponding to each manufacturing process.Should illustrate, in order to easy understand, in Fig. 4 (b), apply deep or light to each constituent element, in Fig. 4 (c), each constituent element is shown emphatically.
(1) glass substrate is shaping: in the molding procedure of glass substrate, prepare to form by the glass possessing desired optical characteristics the glass plate formed, the mode roughly the same with net shape (namely, the shape of cover plate 100) by physical dimension is cut off by known cutting-off method.Cutting-off method have by diamond cutter carve establish cutting line after the method that fractures, carried out the method cut off by cutter sweep.Should illustrate, the glass plate used in this operation can use the glass plate being processed into the thickness of slab size close to net shape by rough lappings such as grindings.After glass plate is cut-off, implements cleaning, obtain glass baseplate 101.
(2) formation of Cr multilayer film: next, in the formation process of Cr multilayer film, on the plane of incidence 101a of glass baseplate 101, formed the Cr of the blooming roughly λ/4 (such as physical film thickness: 58.8nm) forming photomask 105 in turn by sputtering method, vacuum vapour deposition etc.
2o
3the Cr of film 105a, blooming roughly the Cr film 105b of λ/2 (such as physical film thickness: 91.6nm), blooming roughly λ/4 (physical film thickness: 55 ~ 63nm)
2o
3film 105a.Specifically, limit imports oxygen limit by Cr
2o
3film 105a film forming, following limit imports oxygen limit by Cr film 105b film forming, and following limit imports oxygen limit by Cr
2o
3film 105c film forming.
(3) resist coating baking: in resist coating roasting procedure, at the surface of Cr multilayer film coating photoresist, the baking stipulated time.As long as photoresist dissolubility under the effect of the light of ultraviolet wavelength region or infrared wavelength region changes, material is not particularly limited.In addition, as the coating process of photoresist, well-known spin-coating method, dip coating etc. can be suitable for.
(4) exposure resist development: in exposure resist development operation, first, across the photomask of photomask 105 patterning is irradiated light to photoresist.Then, use the developer solution corresponding to photoresist, by photoresist developing, form the resist of the pattern corresponding to photomask 105.
(5) patterning: in patterning operation, is immersed in glass baseplate 101 in Cr etching solution, etches the Cr multilayer film of the part not forming resist.Should illustrate, as Cr etching solution, such as, use cerous nitrate salt: 10 ~ 20%, perchloric acid: 5 ~ 10%, water: the mixed solution of 70 ~ 85%.
(6) resist is peeled off: in resist stripping process, be immersed in the corrosion inhibitor strippers such as alcohol, peeled off by resist.Thus, glass baseplate 101 forms photomask 105.Thus, the photomask 105 of present embodiment is formed by so-called photoetching process.
(7) formation of antireflection film: in the formation process of antireflection film, on photomask 105, by sputtering method, vacuum vapour deposition etc., forms the Al of blooming roughly λ/4 (such as physical film thickness: 78.8nm) in turn
2o
3the ZrO of film 110a, blooming roughly λ/2 (such as physical film thickness: 124.9nm)
2the MgF of film 110b, blooming roughly λ/4 (such as physical film thickness: 93.4nm)
2film 110c, forms antireflection film 110.Complete the cover plate 100 of present embodiment thus.
As mentioned above, the manufacture method of cover plate 100 according to the present embodiment, glass baseplate 100 directly forms photomask 105.Therefore, the adhesion of photomask 105 is higher than existing formation (namely forming the formation of photomask 105 on ultraviolet infrared light reflecting film).In addition, because form the antireflection film 110 (namely, photomask 105 covered by antireflection film 110) of regulation thickness on photomask 105, so extremely low in the light reflectance of light shielding part S.
Be more than the explanation of the first embodiment of the present invention, but the present invention is not limited to the formation of above-mentioned embodiment, can various distortion be carried out in the scope of its technical conceive.Such as, in the present embodiment, glass baseplate 101 is containing Cu
2+infrared absorbing glass (containing Cu
2+fluorophosphate system glass or containing Cu
2+phosphate-based glass), also can select from the transparent material of visible wavelength region, such as, can use pyrex, crystal, vibrin, polyolefin resin, acryl resin etc.
In addition, in the present embodiment, be illustrated by the situation of the Cr multilayer film of the formation such as sputtering method, vacuum vapour deposition to photomask 105, but be not limited to such formation.As photomask 105, except Cr, the metal materials such as Ta (tantalum), Mo (molybdenum), Ni (nickel), Ti (titanium), Cu (copper), Al (aluminium) can be used.Should illustrate, even if when using the metal material outside Cr, as long as also the same with present embodiment, evaluate from the viewpoint of the slope s of the average reflectance Rm of the reflectivity R wavelength 420 ~ 680nm scope, standard deviation, regression straight line, obtain the thickness of the dielectric film of the superiors of photomask 105.
In addition, the photomask 105 of present embodiment is with by Cr
2o
3film 105a, Cr film 105b, Cr
2o
3the situation of 3 layers of Cr multilayer film that film 105c is formed is illustrated, but is not limited to 3 layers of formation, can be made up of more multi-layered, such as, by Cr
2o
3film 105c is configured to the Cr of multiple very thin (such as 2nm)
2o
3the dielectric layer etc. that the Cr film of film and multiple very thin (such as 1nm) is alternately laminated.Should illustrate, in this case, as long as also evaluate from the viewpoint of the slope s of the average reflectance Rm of the reflectivity R wavelength 420 ~ 680nm scope, standard deviation, regression straight line, obtain the thickness of each layer of the upper dielectric layer group of photomask 105, just can be same with present embodiment, realize the function suppressing to incide the reflection of the incident light of transmittance section T and the function suppressing to incide the reflection of the incident light of light shielding part S simultaneously.
In addition, with regard to the Cr of the photomask 105 of present embodiment
2o
3film 105c is that limit imports the situation of 1 layer film that oxygen limit formed and is illustrated, but is not limited to such formation, such as, can be the formation of the different multiple CrOx films (x is the arbitrary ratio of 0 ~ 10) of stacked oxygen import volume.In order to improve the wavelength characteristic of reflectivity further, can use the film having imported nitrogen, also can be by formation stacked for multiple CrOxNy films (x, y are the arbitrary ratio of 0 ~ 10) different with the import volume of nitrogen for oxygen.
In addition, in the present embodiment, be illustrated for the cover plate 100 that the packaging 300 of solid-state imager 200 is sealed, but the present invention similarly also can be applicable to from the light inciding solid-state imager 200, remove near infrared near infrared cut-off filters or from the light inciding solid-state imager 200, remove the optical low-pass filter comprising the light of high spatial frequency.Should illustrate, when being applicable near infrared cut-off filters, can use the glass baseplate 101 same with present embodiment, preferably its thickness is the scope of 0.1 ~ 1.0mm.In addition, when being applicable to optical low-pass filter, as long as use the glass baseplate 101 formed by crystal, pyrex, preferably its thickness is the scope of 0.1 ~ 3.0mm.
In addition, in the manufacture method of the cover plate 100 of present embodiment, be configured to manufacture 1 cover plate 100 by 1 glass baseplate 101, but be not limited to such formation, such as can use large-sized glass baseplate, the multiple cover plate 100 of layout on this glass baseplate and manufacturing.According to such formation, even small-sized cover plate 100 also easily operates, and can manufacture with high productivity.
In addition, in the manufacture method of the cover plate 100 of present embodiment, bake exposure resist development operation (that is, photoetching process) by resist coating, form the resist of the pattern corresponding to photomask 105, but such method might not be defined in.Such as, resist also can be replaced to be coated with and to bake exposure resist development operation, by printing technologies such as screen printings, form the resist of the pattern corresponding to photomask 105.
Embodiment 2
The present embodiment place following characteristics is outer identical with embodiment 1 structure:
In addition, the situation being formed in the plane of incidence 101a side of glass baseplate 101 with regard to the photomask 105 of present embodiment and antireflection film 110 is illustrated, but when the reflected light at the exit facet 101b place of many, the glass baseplate 101 of back light from solid photographic element 200, packaging 300 causes ghost image, flare, also as shown in Figure 5, the antireflection film 120 the same with antireflection film 110 can be formed in the exit facet 101b side of glass baseplate 101.
Embodiment 3
The present embodiment place following characteristics is outer identical with embodiment 1 structure:
In addition, compare the reflected light of the plane of incidence 101a side at glass baseplate 101, because when the reflected light at the exit facet 101b place of glass baseplate 101 causes ghost image, flare, also as shown in Figure 6, photomask 107 and antireflection film 120 can be formed in the exit facet 101b side of glass baseplate 101.
Embodiment 4
The present embodiment place following characteristics is outer identical with embodiment 1 structure:
In addition, for solving Problems existing in embodiment 3, as shown in Figure 7, also can form photomask 105 and antireflection film 110 in the plane of incidence 101a side of glass baseplate 101, form photomask 107 and antireflection film 120 in the exit facet 101b side of glass baseplate 101.
Embodiment 5
Fig. 8 is the longitudinal section of the formation of cover plate 100A involved by embodiments of the invention 5.As shown in Figure 8, the cover plate 100A of present embodiment possesses etch stop layer 103 between glass baseplate 101 and photomask 105, and this point is different from the cover plate 100 involved by embodiments of the invention 1-4.
As mentioned above, the photomask 105 lithographically patterning of the cover plate 100 involved by embodiments of the invention 1-4, but in patterning operation, when Cr multilayer film is etched, according to etching condition, sometimes cause the plane of incidence 101a of glass baseplate 101 roughened by etching.Therefore, in order to this problem anti-is in possible trouble, the cover plate 100A of present embodiment possesses etch stop layer 103 between glass baseplate 101 and photomask 105.
The etch stop layer 103 of present embodiment is the SiO with light transmission
2film, as described later, be formed on the plane of incidence 101a of glass baseplate 101 by sputtering method, vacuum vapour deposition etc.Should illustrate, as etch stop layer 103, the preferably at least film of light transmission rate high (namely transparent) in the wavelength domain of visible ray, as material, such as, can replace SiO
2use Al
2o
3or ZrO
2.In addition, the thickness of etch stop layer 103 can stopping free setting in the scope worked as etching, not have influential mode to the performance of the antireflection film 110 that cover plate 100A is formed, in the present embodiment, be set to the blooming of λ/2.
Fig. 9 is the flow process of the manufacture method of the cover plate 100A represented involved by present embodiment.In the same manner as Fig. 4, Fig. 9 (a) is the process flow diagram of the manufacturing process representing cover plate 100A, Fig. 9 (b) is the enlarged plan view of the cover plate 100A corresponding to each manufacturing process, and Fig. 9 (c) is the enlarged section of the cover plate 100A corresponding to each manufacturing process.Should illustrate, in the same manner as Fig. 4, in order to easy understand, in Fig. 9 (b), apply deep or light to each constituent element, in Fig. 9 (c), each constituent element is shown emphatically.
As shown in Figure 9, the manufacture method of the cover plate 100A involved by present embodiment has SiO between the molding procedure and the formation process of Cr multilayer film of glass substrate
2the formation process of film, the manufacture method (that is, the manufacture method shown in Fig. 4) of this point and the cover plate involved by the first embodiment 100 is different.
At SiO
2in the formation process of film, on the plane of incidence 101a of the glass baseplate 101 obtained in the molding procedure of glass substrate, formed the SiO of blooming roughly λ/2 by sputtering method, vacuum vapour deposition etc.
2film (namely, etch stop layer 103).Should illustrate, in the present embodiment, making with reference to wavelength X is 520nm, SiO
2refractive index be 1.45, as design load, form physical film thickness and be about the SiO of 179nm
2film, but in the manufacturing process of reality, there are differences in the margin tolerance of ± 10% degree, form the SiO of 179nm ± 10%
2film.
Then, by the technique same with the technique shown in Fig. 4, at SiO
2film (that is, etch stop layer 103) is upper forms Cr multilayer film, by etching (that is, patterning operation) by photomask 105 patterning, and then forms antireflection film 110 in the mode of the peristome covering photomask 105 and photomask 105.
Should illustrate, if in patterning operation, glass baseplate 101 is immersed in Cr etching solution, then along with the carrying out of etching, the Cr multilayer film not forming the part of resist is eluted in etching solution, but because in the present embodiment, is formed with etch stop layer 103 in the downside (namely, between Cr multilayer film and glass baseplate 101) of Cr multilayer film, so block etching thus, the plane of incidence 101a of glass baseplate 101 can not be carved by etching liquid corrosion.Therefore, in the present embodiment, the plane of incidence 101a of glass baseplate 101 can not be roughened, and the light inciding the plane of incidence 101a of glass baseplate 101 can not be at random but be imported in glass baseplate 101, and from exit facet 101b outgoing.In addition, formation according to the present embodiment, because positively etching can be stoped by etch stop layer 103, so longly can be immersed in overall for glass baseplate 101 temporally in etching solution, can be formed without the etch residue of Cr multilayer film, photomask 105 that edge is neat.
Be more than the explanation of embodiments of the present invention, but same with embodiment 1-4, and the present invention is not limited to the formation of above-mentioned embodiment, can carry out various distortion in the scope of its technical conceive.
Such as, the blooming describing the etch stop layer 103 of present embodiment is the situation of roughly λ/2, but as long as work as etching stop, can be suitable for any thickness.But, when film forming etch stop layer 103, the difference (error) in the general manufacture producing ± 10% degree.Therefore, the error manufactured from the viewpoint of compression, the thickness of preferred etch stop layer 103 gets over Bao Yuehao.In addition, if the thickness of etch stop layer 103 is thick, then worry following problem: its membrane stress causes glass baseplate 101 warpage, make glass baseplate 101 damaged, the fraction defective in subsequent handling (formation process of such as antireflection film) raises.Therefore, from the viewpoint of mitigation membrane stress, also preferably the thickness of etch stop layer 103 is thin, is preferably the physical film thickness (i.e. glass baseplate 101 thickness of slab × 0.3 ~ 200.0ppm=etch stop layer 103 physical film thickness) of 0.3 ~ 200.0ppm relative to the thickness of slab of glass baseplate 101.More specifically, the such as glass baseplate 101 of the preferred thickness of slab relative to 0.1 ~ 1.0mm, form the etch stop layer 103 of the physical film thickness of 0.3 ~ 20.0nm, more preferably relative to the glass baseplate 101 of the thickness of slab of 0.1 ~ 0.3mm, the etch stop layer 103 of the physical film thickness of 1.0 ~ 10.0nm (namely, 3.3 ~ 100.0ppm) is formed.Should illustrate, when the thickness of etch stop layer 103 be roughly λ/2, thinner, preferably correspond to this, using the Al of the inscape as antireflection film 110
2o
3film 110a, ZrO
2film 110b, MgF
2each thickness optimization of film 110c, in this case, also same with the cover plate 100 involved by the first embodiment, as long as coordinate antireflection film 110, make the Cr of the superiors' (that is, layer connected with antireflection film 110) as photomask 105
2o
3the thickness optimization of film 105c, to have the function suppressing to incide the reflection of the incident light of the wavelength 420 ~ 680nm of transmittance section T and the function suppressing to incide the reflection of the incident light of the wavelength 420 ~ 680nm of light shielding part S concurrently.
Embodiment 6
The present embodiment is except following characteristics, identical with embodiment 5 structure:
In addition, the situation etch stop layer 103 of present embodiment, photomask 105 and antireflection film 110 being formed in the plane of incidence 101a side of glass baseplate 101 is illustrated, but it is many from the light of turning back of solid photographic element 200, packaging 300, when the reflected light of the outgoing plane 101b of glass baseplate 101 causes ghost image, flare occur, as shown in Figure 10, the antireflection film 120 same with antireflection film 110 can be formed in the outgoing plane 101b side of glass baseplate 101.
Embodiment 7
The present embodiment is except following characteristics, identical with embodiment 5 structure:
In addition, compare the reflected light of the plane of incidence 101a side at glass baseplate 101, because of when reflected light generation ghost image, the flare of the outgoing plane 101b of glass baseplate 101, as shown in figure 11, etch stop layer 106, photomask 107 and antireflection film 120 can be formed in the outgoing plane 101b side of glass baseplate 101.
Embodiment 8
The present embodiment is except following characteristics, identical with embodiment 5 structure:
In addition, for solving Problems existing in embodiment 7, can be as shown in figure 12, form etch stop layer 103, photomask 105 and antireflection film 110 in the plane of incidence 101a side of glass baseplate 101, form etch stop layer 106, photomask 107 and antireflection film 120 in the outgoing plane 101b side of glass baseplate 101.
Should illustrate, what will be understood that embodiment of disclosure is citing a little, and non-limiting.Scope of the present invention is not by above-mentioned explanation but is provided by claims, is intended to comprise and the whole changes in claims equivalents and scope.
Claims (15)
1. an optical element, for built with the optical element used in the camera head of solid-state imager, it is characterized in that, described optical element comprises:
Glass baseplate, the plane of incidence possessing light incidence and the exit facet of the light transmission inciding this plane of incidence, incide on solid-state imager after described light transmission exit facet,
At least one side in the described plane of incidence and described exit facet is formed as frame-shaped and a photomask part for described light covered,
With the antireflection film that the mode of the peristome covering described photomask and described photomask is formed; Be formed: limit suppresses the light reflection limit inciding the region of the peristome of described photomask to make the transmittance section of the light transmission in the region of the peristome inciding described photomask, the light shielding part that limit suppresses the light reflection limit inciding the region of described photomask to be covered by the light in the region inciding described photomask.
2. optical element according to claim 1, is characterized in that, described photomask is formed by the film at least comprising Cr.
3. optical element according to claim 2, is characterized in that, described photomask comprises: the first film formed by Cr, by Cr
2o
3formed, be formed in the second film between described the first film and described glass baseplate, by Cr
2o
3formed, be formed in the 3rd film between described the first film and described antireflection film.
4. optical element according to claim 3, is characterized in that, described 3rd film is connected with described antireflection film, and the 3rd film thickness is 55 ~ 63nm.
5. the optical element according to any one in Claims 1 to 4, is characterized in that, described antireflection film is Al
2o
3, ZrO
2, MgF
2stacked above one another is formed.
6. the optical element according to any one in Claims 1 to 5, is characterized in that, described in the area ratio of described transmittance section, the area of the sensitive surface of solid-state imager is large.
7. the optical element according to any one in claim 1 ~ 6, is characterized in that, described optical element be arranged on receive described solid-state imager packaging before, as cover plate.
8. the optical element according to any one in claim 1 ~ 7, is characterized in that, described glass baseplate is the near-infrared ray absorption glass of the light of the wavelength in absorption near infrared ray region.
9. optical element according to claim 8, is characterized in that, described near-infrared ray absorption glass is by containing Cu
2 +fluorophosphate system glass or containing Cu
2+phosphate-based glass to form.
10. the optical element according to any one in claim 1 ~ 9, is characterized in that, described photomask is formed by etching.
11. optical elements according to claim 10, is characterized in that, between described photomask and described transparency carrier, be provided with etch stop layer, for the protection of glass baseplate in described etch stop layer etching.
12., according to optical element described in claim 11, is characterized in that, described etch stop layer is by SiO
2, Al
2o
3or ZrO
2film formed.
13. optical elements according to claim 11 or 12, is characterized in that, with described light with reference to wavelength for λ time, the blooming of described etch stop layer is λ/2.
14. optical elements according to any one in claim 11 ~ 13, it is characterized in that, the physical film thickness of described etch stop layer is 0.3 ~ 200.0ppm relative to the thickness of slab of described glass baseplate.
15. optical elements according to any one in claim 11 ~ 14, it is characterized in that, the thickness of slab of described glass baseplate is 0.1 ~ 1.0mm, and the physical film thickness of described etch stop layer is 0.3 ~ 20.0nm.
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| JP2014157237A JP6272175B2 (en) | 2014-07-31 | 2014-07-31 | Optical element |
| JP2014-223852 | 2014-11-02 | ||
| JP2014223852 | 2014-11-02 | ||
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| JP7380117B2 (en) | 2019-11-18 | 2023-11-15 | 豊田合成株式会社 | Near infrared sensor cover |
Also Published As
| Publication number | Publication date |
|---|---|
| CN204666855U (en) | 2015-09-23 |
| KR101988934B1 (en) | 2019-06-13 |
| TW201543066A (en) | 2015-11-16 |
| KR20150109295A (en) | 2015-10-01 |
| TWI682190B (en) | 2020-01-11 |
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Application publication date: 20150923 |