CN104932045A - Transparent substrate - Google Patents
Transparent substrate Download PDFInfo
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- CN104932045A CN104932045A CN201510120728.2A CN201510120728A CN104932045A CN 104932045 A CN104932045 A CN 104932045A CN 201510120728 A CN201510120728 A CN 201510120728A CN 104932045 A CN104932045 A CN 104932045A
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- Prior art keywords
- transparency carrier
- optical element
- light
- index
- transparency
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- 239000000758 substrate Substances 0.000 title claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 57
- 230000003287 optical effect Effects 0.000 claims abstract description 53
- 239000010408 film Substances 0.000 claims description 24
- 238000004806 packaging method and process Methods 0.000 claims description 10
- 238000002834 transmittance Methods 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- DWYMPOCYEZONEA-UHFFFAOYSA-L fluoridophosphate Chemical compound [O-]P([O-])(F)=O DWYMPOCYEZONEA-UHFFFAOYSA-L 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 5
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 239000000969 carrier Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 26
- 238000000034 method Methods 0.000 description 23
- 239000011651 chromium Substances 0.000 description 15
- 239000010949 copper Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000013523 data management Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- -1 and more preferably Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Abstract
The invention provides a transparent substrate. The transparent substrate enables small protective glass and near infrared ray stop light filters with good connection sealing property to be easily made. The transparent substrate comprises an incident surface which light enters and an emitting surface for penetrating and emitting of the light reaching the incident surface on the front surface and the rear surface, and is characterized by combining a plurality of optical elements. Each optical element comprises a transmitting part through which light can penetrate, and a shading part formed on at least one of the incident surface and the emitting surface, surrounding the periphery of the transmitting part as a frame and blocking part of the light. The transparent substrate is easy to manufacture, so that the production efficiency is improved; the connection sealing property of the shading part and the transparent substrate is good and the optical path blockage caused by double images can be prevented.
Description
Technical field
The present invention relates to a kind of transparency carrier be configured in before solid-state imager, particularly protect and the transparency carrier used in the optical elements such as the cover plate as light inlet window, the near infrared cut-off filters for the visibility correction of solid-state imager before the packaging being installed on storage solid-state imager, to solid-state imager.
Background technology
In recent years, the camera assembly built with solid-state imagers such as CCD (Charge-Coupled Device), CMOS (Complementary Metal OxideSemiconductor) is used to mobile phone, portable information terminal device etc.Such camera assembly possesses pottery, the resin-made packaging of protection solid-state imager and is arranged on the cover plate sealed before it and to solid-state imager.
In addition, generally speaking, because solid-state imager has spectral sensitivity near ultraviolet ray region near infrared range, so camera assembly possesses the near infrared cut-off filters that the near infrared ray part being undertaken by the mode of the visibility close to people that blocks incident light is revised, in order to reduce the size of camera assembly entirety, the near infrared cut-off filters (such as, patent documentation 1) having the formation of near infrared cut-off filters and cover plate concurrently is proposed.
The near infrared cut-off filters recorded in patent documentation 1 has: the transparent base (such as infrared absorbing glass) of tabular, the ultraviolet infrared light reflecting film be made up of dielectric multilayer-film being formed in the one side of transparent base, the antireflection film of another side being formed in transparent base.
In addition, if the opticses such as such near infrared cut-off filters are configured in (namely in light path) before solid-state imager, the light then reflected in the side of near infrared cut-off filters etc. incides the imaging surface of solid-state imager, cause the problem occurring flare, ghost image etc. thus, so in the near infrared cut-off filters recorded in patent documentation 1, the light shield layer that ultraviolet infrared light reflecting film is formed frame-shaped is further proposed, by the countermeasure that the light path becoming the light of the reason of ghost image etc. blocks.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2013-068688 publication
Summary of the invention
Thus, according to the near infrared cut-off filters recorded in patent documentation 1, the near infrared ray part of incident light can be cut off, and the light path becoming the light of the reason of ghost image etc. is blocked.
But, because the light shield layer of the near infrared cut-off filters recorded in patent documentation 1 is coated with light-cured resin on ultraviolet infrared light reflecting film,, so strong with the adhesion of transparent base, there is the problem peeled off because of used environment in the metal of the black such as evaporation Cr and being formed.
In addition, as the near infrared cut-off filters recorded in patent documentation 1, when than large-size (40mm × 40mm × 0.3mm), than being easier to be formed accurately light shield layer, if but as the camera assembly used in nearest mobile phone, portable information terminal device etc., size reduces, then be necessary for the near infrared cut-off filters of small-sized (such as 5mm × 5mm × 0.2mm), operation becomes difficult, so form light shield layer with being difficult to the good and high productivity of precision thereon.
The present invention completes in view of such situation, and its object is to provides a kind of transparency carrier, is the transparency carrier that can make the optical elements such as small-sized cover plate, near infrared cut-off filters, has the light shield layer strong with the adhesion of transparency carrier.
In order to achieve the above object, a kind of transparency carrier, the transparency carrier of multiple optical element for layout, described optical element possesses the plane of incidence of light incidence and incides the exit facet of light transmission of this plane of incidence; Described each optical element possesses: described light can through transmittance section, and by light shielding part that a part for described light covers; Described light shielding part, at least one side of the plane of incidence and exit facet is formed, and surrounds the periphery of described transmittance section in frame shape.
According to such formation, because the multiple optical element of layout on the transparent substrate, even if so be small-sized optical element, also handled easily, on optical element, the good and high productivity of precision light shielding part can be formed.In addition, because light shielding part is formed directly on transparency carrier, so the adhesion of light shielding part and transparency carrier can be improved.
Preferably, multiple optical element is configured to two-dimensional lattice shape.According to such formation, easily multiple optical element can be separated, can manufacture on high productivity ground.
Further, light shielding part can be formed by the film of metal or resin.According to such formation, the high light shielding part of light-proofness easily can be formed.
Preferably, optical element is the parts be configured in the light path of solid-state imager, and the area of the sensitive surface of the area ratio solid-state imager of transmittance section is large.In addition, in this case, preferred optical element be configured in storage solid-state imager packaging cover plate above, from the light inciding solid-state imager, remove near infrared near infrared cut-off filters or removing comprises the optical low-pass filter of the light of high spatial frequency from the light inciding solid-state imager.
Preferably, transparency carrier is the glass substrate of glass, and more preferably, glass substrate is by containing Cu
2+fluorophosphate system glass or containing Cu
2+the near-infrared ray absorption glass that forms of phosphate-based glass.According to such formation, because near infrared ray can be removed from the light inciding solid-state imager, so revise close to the mode of the visibility of people by the spectral sensitivity of solid-state imager.
Preferably, the frame portion that the mode that transparency carrier has the element forming part defining multiple optical element and the periphery proportionately surrounding to frame-shaped this element forming part is formed, is provided with the first index for being separated one by one by multiple optical element in frame portion.According to such formation, by cutting out based on the first index, can easily each optical element be separated from transparency carrier.
Preferably, each optical element is vacated specified gap and is configured between adjacent optical element, and the first index should be configured in the position in gap.
Preferably, second index that the position of each optical element in element forming part can be represented with two-dimensional coordinate is set in frame portion.In addition, in this case, preferably the second index is made up of the index of position of line direction and the index of the position of expression column direction representing each optical element.According to such formation, easily can determine the position of multiple ground layout optical element on the transparent substrate, such as, easily can carry out data management to the check result of each optical element.
Preferably, the 3rd index that can identify transparency carrier is one by one provided with in frame portion.In addition, in this case, preferably the 3rd index is the intrinsic sequence number of each transparency carrier.
Preferably, transparency carrier has non-point-symmetric shape when overlooking.According to such formation, can with the profile of transparency carrier for benchmark easily determines the position of multiple ground layout optical element on the transparent substrate.
Further, transparency carrier can possess the functional membrane covering multiple optical element.In addition, in this case, preferred function film is the optical thin film possessing antireflection, cut off infrared ray, cut off more than at least 1 function in ultraviolet.
As mentioned above, according to the present invention, provide the transparency carrier that easily can make the optical element such as small-sized cover plate, near infrared cut-off filters with the strong photomask of adhesion.
Accompanying drawing explanation
Fig. 1 is the planimetric map of the transparency carrier involved by the embodiment of the present invention 1;
Fig. 2 is the key diagram of the formation of the cover plate of layout on the transparency carrier involved by embodiments of the invention 1;
Fig. 3 illustrates the cover plate of layout on the transparency carrier involved by embodiments of the invention 1 to be separated and the longitudinal section of the formation of the solid-state image pickup device carried;
Fig. 4 is the enlarged drawing cut out with mark be arranged on the transparency carrier involved by embodiments of the invention 1;
Fig. 5 is the process flow diagram of the manufacture method of the transparency carrier represented involved by embodiments of the invention 1;
Fig. 6 is embodiment 2 planimetric map of transparency carrier involved in the present invention;
Fig. 7 is embodiment 3 planimetric map of transparency carrier involved in the present invention;
Fig. 8 is embodiment 4 planimetric map of transparency carrier involved in the present invention;
Wherein, 1, solid-state image pickup device;
10,10A, 10B, 10C transparency carrier;
100 cover plates;
101,101A, 101B, 101C glass baseplate;
The 101a plane of incidence;
101b exit facet;
102 photomasks;
103 cut out with mark;
104a, 104b, 104c, 104d, 104e, 104f index;
105a, 105b, 105c, 105d, 105e, 105f index;
110A notch;
110B location panel;
110C recess;
200 solid-state imagers;
300 packagings.
Embodiment
Be further explained the present invention below in conjunction with embodiment and accompanying drawing, in figure, identical or corresponding part is with same-sign, not repeat specification.
Embodiment 1
Fig. 1 is the planimetric map of the transparency carrier 10 involved by embodiments of the present invention.The transparency carrier 10 of present embodiment is the so-called working substrate that layout has multiple cover plate 100 (optical element); cover plate 100 (optical element) be arranged on storage solid-state imager 200 packaging 300 before (Fig. 3); solid-state imager 200 is protected, and is used as light inlet window.Fig. 2 is the key diagram of the formation of the cover plate 100 of multiple ground layout on the transparency carrier 10 of present embodiment, and Fig. 2 (a) is planimetric map, and Fig. 2 (b) is longitudinal section.In addition, Fig. 3 is the longitudinal section of the formation of the solid-state image pickup device 1 that the peristome of the packaging 300 that solid-state imager 200 is described is sealed by the cover plate 100 of present embodiment.
As shown in Figure 1 and Figure 2, the transparency carrier 10 of present embodiment is made up of the glass baseplate 101 of the outward appearance of orthogonal tabular, form in substantially central portion rectangle plate making area Z (element forming part) that plate-making has cover plate 100, be formed with frame portion OF in the edge surrounding plate making area Z.At plate making area Z, to make a plate cover plate 100 in the mode of 6 (transverse direction) × 6 (longitudinal direction).Should illustrate, the cover plate 100 of present embodiment is configured to: the size with 6mm (transverse direction) × 5mm (longitudinal direction), in the longitudinal and horizontal gap d vacating 0.2mm, be configured to two-dimensional lattice shape, cut out along gap d, finally can obtain 36 cover plates 100 thus.Thus, in the transparency carrier 10 of present embodiment, each cover plate 100 of plate-making is separated by gap d, and gap d works as the index be separated one by one cover plate 100, and becomes so-called cut-out amplitude.
As shown in Figure 2, the orthogonal tabular outward appearance of each cover plate 100, is made up of glass baseplate 101, the photomask 102 be formed on glass baseplate 101.In addition, the one side (surface on the upside of in Fig. 2 (b)) of glass baseplate 101 is when cover plate 100 is installed in packaging 300, become towards the plane of incidence 101a of the light incidence of solid-state imager 200, the another side (surface on the downside of in Fig. 2 (b)) of glass baseplate 101 becomes the exit facet 101b of the light outgoing inciding plane of incidence 101a.
The glass baseplate 101 of present embodiment is containing Cu
2+infrared absorbing glass (containing Cu
2+fluorophosphate system glass or containing Cu
2+phosphate-based glass).Generally speaking, fluorophosphate system glass has excellent against weather, by adding Cu in glass
2+, can at the simultaneously stability near infrared ray of the high permeability of maintenance visible domain.So, if glass baseplate 101 is configured in the light path of the incident light inciding solid-state imager 200, then work as a kind of low-pass filter, revise close to the mode of the visibility of people by the spectral sensitivity of solid-state imager 200.Should illustrate, the fluorophosphate system glass used in the glass baseplate 101 of present embodiment can use known glass to form, but is particularly preferably containing Li
+, alkaline-earth metal ion (such as Ca
2+, Ba
2+deng), rare earth element ion (Y
3+, La
3+deng) composition.In addition, the thickness of the glass baseplate 101 of present embodiment is not particularly limited, and from the viewpoint of realizing small, light, is preferably the scope of 0.1 ~ 1.5mm.
Photomask 102 is films of Cr (chromium), has the function of the unnecessary light removing covering a part for the incident light inciding plane of incidence 101a, will become the reason of ghost image etc.Photomask 102 when overlooking cover plate 100, along glass baseplate 101 outer formation frame-shaped formed.Namely, in the cover plate 100 of present embodiment, be formed: central portion rectangular in form formed, transmittance section T from the light transmission of plane of incidence 101a incidence to exit facet 101b, and the light shielding part S proportionately surrounding to frame-shaped transmittance section T, the light inciding plane of incidence 101a is covered.
As shown in Figure 3, before the packaging 300 that each cover plate 100 is installed in solid-state imagers 200 such as storage CCD, CMOS etc. (in Fig. 3 upside), fixed by bonding agent (not shown).If cover plate 100 is arranged in packaging 300, then be configured in the light path of the incident light inciding solid-state imager 200, but as mentioned above, light shielding part S (namely, photomask 102) is formed in cover plate 100, so to the incident unnecessary light of solid-state imager, ghost image, flare can not can not be there is.Should illustrate, the size of transmittance section T and light shielding part S suitably determines according to optical element, the size of solid-state imager 200 and the size of cover plate 100 such as lens in the outside being configured in solid-state image pickup device 1, but forms by the mode that the area of at least sensitive surface of the area ratio solid-state imager 200 of transmittance section T is large.
As mentioned above, on the transparency carrier 10 of present embodiment, layout has 36 small-sized cover plates 100 defining the photomask 102 of frame-shaped.So in the present embodiment, by being manufactured as work unit by transparency carrier 10, even small-sized cover plate 100, also can improve operation, precision is good and high productivity ground forms photomask 102 on the transparent substrate 10.In addition, because the photomask of present embodiment 102 is formed directly on glass baseplate 101, so become strong with the adhesion of glass baseplate 101, be difficult to the formation peeled off.
Should illustrate, as shown in Figure 1, in the transparency carrier 10 of present embodiment, on the extended line of each gap d each limit of (namely, on frame portion OF) and plate making area Z extended line on (namely, on frame portion OF), clip plate making area Z, formed respectively and cut out for a pair with mark 103 (the first index).Fig. 4 is the enlarged drawing cut out with mark 103 shown in Fig. 1.As shown in Fig. 1 and Fig. 4, present embodiment cut out with mark 103 to be criss-cross black marks that formed by the technique the same with photomask 102 film of Cr (namely), that be made up of ordinate and the horizontal line of length 0.2mm, width 0.02mm, to be respectively formed at the position leaving plate making area Z 1mm.Thus, on the transparency carrier 10 of present embodiment, each limit formation along each gap d and plate making area Z is cut out with mark 103, so when cutting out each cover plate 100, cut out with mark 103 by the blade of cutter is aimed at, each cover plate 100 can be cut out exactly.
In addition, in the transparency carrier 10 of present embodiment, frame portion OF is provided with index 104a ~ 104f and the index 105a ~ 105f (the second index) of the plate-making position (namely, two-dimensional coordinate) representing cover plate 100.As shown in Figure 1, in present embodiment, index 104a ~ 104f is the index of the position (namely, coordinate) of the column direction representing each cover plate 100, and index 105a ~ 105f is the index of the position (namely, coordinate) of the line direction representing each cover plate 100.In addition, the intrinsic sequence number SN of each transparency carrier 10 (the 3rd index) is marked in the bottom right of transparency carrier 10.Index 104a ~ 104f, index 105a ~ 105f and sequence number SN is used for the data management of the cover plate 100 being judged as non-defective unit or difference product in inspection operation described later.Should illustrate, in the present embodiment, index 104a ~ 104f is letter " A " ~ " F " formed by the method (namely, the film of Cr) same with photomask 102, index 105a ~ 105f is numeral " 1 " ~ " 6 " formed by the method (namely, the film of Cr) same with photomask 102, but in transparency carrier 10 (namely, plate making area Z in) if in can be determined by two-dimensional coordinate the position of each cover plate 100 also can use other indexs.In addition, the sequence number SN of present embodiment is by time shaping for glass baseplate 101 in order to manage each transparency carrier 10, direct marking on glass baseplate 101, but as long as one by one can identify each transparency carrier 10, also can use the index beyond sequence number SN.
Next the manufacture method of the transparency carrier 10 of present embodiment is described.Fig. 5 is the process flow diagram of the manufacture method of the transparency carrier 10 represented involved by present embodiment.Fig. 5 (a) is the process flow diagram of the manufacturing process representing transparency carrier 10, Fig. 5 (b) is the enlarged plan view of the transparency carrier 10 corresponding to each manufacturing process, and Fig. 5 (c) is the enlarged section of the transparency carrier 10 corresponding to each manufacturing process.Should illustrate, in Fig. 5 (b) and Fig. 5 (c), for convenience of explanation, only provide a part of the plate making area Z of transparency carrier 10.In addition, in order to easy understand, in Fig. 5 (b), apply deep or light to a part for inscape, in Fig. 5 (c), a part for inscape is shown emphatically.
(1) glass substrate is shaping: in the molding procedure of glass substrate, prepare to form by the glass possessing desired optical characteristics the glass plate formed, the mode roughly the same with net shape (namely, the shape of transparency carrier 10) by physical dimension is cut off by known cutting-off method.Cutting-off method have by diamond cutter carve establish cutting line after the method that fractures, carried out the method cut off by cutter sweep.Should illustrate, the glass plate used in this operation can use the glass plate being processed into the thickness of slab size close to net shape by rough lappings such as grindings.After glass plate is cut-off, implements cleaning, obtain glass baseplate 101.
(2) formation of Cr film: in the formation process of Cr film, be formed on glass baseplate 101 by sputtering method, vacuum vapour deposition etc. the substrate of photomask 102, the Cr film of about 0.1 μm of thickness.
(3) resist coating baking: be coated with at resist. in roasting procedure, at the surface of Cr film coating photoresist, the baking stipulated time.As long as photoresist dissolubility under the effect of the light of ultraviolet wavelength region or infrared wavelength region changes, material is not particularly limited.In addition, as the coating process of photoresist, well-known spin-coating method, dip coating etc. can be suitable for.
(4) resist development is exposed: in exposure resist development operation, first, across by photomask 102, cut out with mark 103, index 104a ~ 104f, index 105a ~ 105f patterning photomask (not shown) to photoresist irradiate light.Then, use the developer solution corresponding to photoresist, by photoresist developing, form the resist corresponding to photomask 102, cut out the pattern with mark 103, index 104a ~ 104f, index 105a ~ 105f.
(5) patterning: in patterning operation, be immersed in Cr remover, the Cr film of the part not forming resist etched, forms photomask 102 by Cr film, cut out the pattern using mark 103, index 104a ~ 104f, index 105a ~ 105f.
(6) resist is peeled off: in resist stripping process, be immersed in the corrosion inhibitor strippers such as alcohol, peeled off by resist.Thus, glass baseplate 101 is formed photomask 102, cuts out with mark 103, index 104a ~ 104f, index 105a ~ 105f, form the product that layout has multiple cover plate 100.
(7) check operation: in inspection operation, for each cover plate 100 of layout on glass baseplate 101, check the various project such as thickness, shape of photomask 102, carry out the judgement of non-defective unit or difference product.The address information of judged result and the cover plate 100 determined by index 104a ~ 104f and index 105a ~ 105f of non-defective unit and difference product (namely, two-dimensional coordinate), mark on glass baseplate 101 sequence number SN together with carry out data management, be judged as that the cover plate 100 of the product that differ from can not be used after cutting out.Should illustrating, for checking the cover plate 100 being judged as difference product in operation, also can be marked by stamped signature, marking etc., in order to avoid use by mistake.
As mentioned above, the manufacture method of transparency carrier 10 according to the present embodiment, forms 36 photomasks 102 corresponding to cover plate 100 on the transparent substrate 10 simultaneously, is made a plate by cover plate 100.Therefore, compared with the existing method forming photomask 102 on each cover plate 100, processing ease, can form high-precision photomask 102 in addition.
The present invention is not limited to the formation of above-mentioned embodiment, can carry out various distortion in the scope of its technical conceive.Such as, in the present embodiment, glass baseplate 101 is containing Cu
2+infrared absorbing glass (containing Cu
2+fluorophosphate system glass or containing Cu
2+phosphate-based glass), also can select in visible wavelength region is transparent material, such as, can use pyrex, crystal, vibrin, polyolefin resin, acryl resin etc.
In addition, 6 (transverse direction) × 6 (longitudinal direction) cover plates 100 that the transparency carrier 10 of present embodiment is made a plate, but be not limited to such formation, plate-making number corresponds to the size of cover plate 100 etc. and suitably changes.
In addition, the formation of the transparency carrier 10 of present embodiment multiple cover plate 100 that has been layout, but also similarly can make that layout is multiple removes near infrared near infrared cut-off filters or removing comprises the optical low-pass filter of the high light of spatial frequency from the light inciding solid-state imager 200 formation from the light inciding solid-state imager 200.Should illustrate, when forming near infrared cut-off filters, can use the glass baseplate 101 same with the transparency carrier 10 of present embodiment, preferably its thickness is the scope of 0.1 ~ 1.5mm.In addition, when forming optical low-pass filter, as long as use the transparency carrier 10 formed by crystal, pyrex, preferably its thickness is the scope of 0.1 ~ 3.0mm.
In addition, in the present embodiment, the product forming photomask 102 in the plane of incidence 101a side of glass baseplate 101 is illustrated, but photomask 102 also can be formed in exit facet 101b side, can also be formed in the two sides of plane of incidence 101a and exit facet 101b.
In addition, the product only forming photomask 102 in the cover plate 100 of present embodiment is illustrated, but be not limited to such formation, also can form the optical thin film of more than at least a kind function had in antireflection film, infrared ray barrier film, ultraviolet blocking film in the mode covering photomask 102.In addition, also upper formation the optical thin film of more than at least a kind function in antireflection film, infrared ray barrier film, ultraviolet blocking film can be had in the face (namely, exit facet 101b) not forming photomask 102 side of cover plate 100.Such functional membrane can after above-mentioned resist stripping process, disposable to be formed transparency carrier 10 entirety (namely by whole cover plates 100 of making a plate) is upper by such as sputtering method, vacuum vapour deposition, so the good and functional membrane that performance is uneven few of efficiency can be formed.
In addition, in the present embodiment, be illustrated by the product of the Cr film of the formation such as sputtering method, vacuum vapour deposition to photomask 102, but be not limited to such formation.As photomask 102, except Cr, the metal materials such as Ta (tantalum), Mo (molybdenum), Ni (nickel), Ti (titanium), Cu (copper), Al (aluminium) can be used, be dispersed with the resin material of the black pigments such as carbon or, the stacked resin material with the dyed layer of the polychrome of photopermeability.Should illustrating, when using resin material, photomask 102 can be formed by known screen printing etc., not need above-mentioned resist coating roasting procedure, exposure resist development operation, patterning operation, resist stripping process.
In addition, cutting out of present embodiment uses mark 103 for criss-cross black mark, as long as but the centre of figure of mark point or centre of figure line can be seen or carry out image recognition, such as, can use the mark of the various shapes such as T-shaped, L-shaped, I shape, toroidal (●), quadrilateral shape (■), diamond shaped (◆).
In addition, the situation that the transparency carrier 10 of present embodiment is made up of the glass baseplate 101 of rectangular plate-like is illustrated, but is not limited to such formation.Embodiment 2 ~ 4 (Fig. 6 ~ Fig. 8) represents three kinds of differences of transparency carrier 10 of the present invention and the transparency carrier of embodiment 1 and planimetric map thereof respectively.
Embodiment 2
As shown in Figure 6, the upper left corner of the glass baseplate 101A of the transparency carrier 10A of the present embodiment cuts out otch sideling, is formed with notch 110A.In addition, in the transparency carrier 10A of the present embodiment, do not represent index 104a ~ 104f and the index 105a ~ 105f of the plate-making position (namely, two-dimensional coordinate) of cover plate 100, these are different from the transparency carrier 10 of embodiment 1.
Thus, if arrange notch 110A on transparency carrier 10A, then because transparency carrier 10A becomes non-point-symmetric shape, so transparency carrier 10A has directivity.So, as long as such as formed two-dimensional coordinate with the cover plate 100 closest to notch 110A for benchmark, index 104a ~ 104f and the index 105a ~ 105f of plate-making position (namely, two-dimensional coordinate) just can determine the position of each cover plate 100, so need not be represented as that arrangement of sample plot of transparency carrier 10 of embodiment 1.
Embodiment 3
As shown in Figure 7, the transparency carrier 10B of the present embodiment example is made up of the roughly discoid glass baseplate 101B defining the location panel 110B parallel with the line direction of cover plate 100, and layout has 48 cover plates 100.In addition, in the transparency carrier 10B of the present embodiment, do not arrange index 104a ~ 104f and the index 105a ~ 105f of the plate-making position (namely, two-dimensional coordinate) representing cover plate 100 in the same manner as the transparency carrier 10A of embodiment 2, these are different from the transparency carrier 10 of embodiment 1.
Thus, if arrange location panel 110B on roughly discoid transparency carrier 10B, then transparency carrier 10B becomes non-point-symmetric shape, so transparency carrier 10B has directivity.Therefore, as long as such as with location panel 110B down time be positioned at cover plate 100 on the left of most higher level for benchmark (, number one), each cover plate 100 is counted to prescribed direction, give the address of regulation successively, just can determine the position of each cover plate 100 in transparency carrier 10B.Therefore, in the transparency carrier 10B of the present embodiment, also same with the transparency carrier 10A of the first variation, as the transparency carrier 10 of embodiment 1, the index 104a ~ 104f and index 105a ~ 105f that represent plate-making position (namely, two-dimensional coordinate) need not be set.
Embodiment 4
As shown in Figure 8, the transparency carrier 10C of the present embodiment replaces the location panel 110B of embodiment 3, forms the recess 110C of the column direction representing cover plate 100, and this point is different from the transparency carrier 10B of embodiment 3.
Even if arrange recess 110C like this on roughly discoid transparency carrier 10C, transparency carrier 10C also becomes non-point-symmetric shape, and transparency carrier 10C has directivity.Therefore, in the transparency carrier 10C of the present embodiment, also can determine the position of each cover plate 100 in the same manner as the transparency carrier 10B of embodiment 3 example, and the index 104a ~ 104f and index 105a ~ 105f that represent plate-making position (namely, two-dimensional coordinate) need not be set as the transparency carrier 10 of embodiment 1 in transparency carrier 10C.
Should illustrate, what will be understood that embodiment of disclosure is citing a little, and non-limiting.Scope of the present invention is not by above-mentioned explanation but is provided by claims, is intended to comprise and the whole changes in claims equivalents and scope.
Claims (16)
1. a transparency carrier, the transparency carrier of multiple optical element for layout, described optical element possesses the plane of incidence of light incidence and incides the exit facet of light transmission of this plane of incidence, it is characterized in that,
Described each optical element possesses: described light can through transmittance section, and by light shielding part that a part for described light covers;
Described light shielding part, at least one side of the plane of incidence and exit facet is formed, and surrounds the periphery of described transmittance section in frame shape.
2. transparency carrier according to claim 1, is characterized in that, described multiple optical element becomes two-dimensional lattice shape to configure.
3. transparency carrier according to claim 1 and 2, is characterized in that, described light shielding part is formed by the film of metal or resin.
4. the transparency carrier according to any one in claim 1 or 2, is characterized in that,
Described optical element is the parts be configured in the light path of solid-state imager,
Described in the area ratio of described transmittance section, the area of the sensitive surface of solid-state imager is large.
5. transparency carrier according to claim 4, it is characterized in that, described optical element be configured in receive described solid-state imager packaging cover plate above, from the light inciding described solid-state imager, remove near infrared near infrared cut-off filters or removing comprises the optical low-pass filter of the light of high spatial frequency from the light inciding described solid-state imager.
6. transparency carrier according to claim 1 and 2, is characterized in that, described transparency carrier is the glass substrate of glass.
7. transparency carrier according to claim 6, is characterized in that, described glass substrate is by containing Cu
2+fluorophosphate system glass or containing Cu
2+the near-infrared ray absorption glass that forms of phosphate-based glass.
8. transparency carrier according to claim 1 and 2, is characterized in that,
Described transparency carrier has: element forming part, defines described multiple optical element; Frame portion, proportionately the mode of the periphery of the described element forming part of frame-shaped ground encirclement is formed,
The first index for being separated one by one by described multiple optical element is provided with in described frame portion.
9. transparency carrier according to claim 8, is characterized in that,
Described each optical element is configured to vacate specified gap between adjacent optical element,
The position that described first index corresponds to described gap is configured.
10. transparency carrier according to claim 8, is characterized in that, described frame portion is provided with second index that the position of the described each optical element in described optical element forming portion can be represented with two-dimensional coordinate.
11. transparency carriers according to claim 10, is characterized in that, described second index is made up of the index of position of line direction and the index of the position of expression column direction representing described each optical element.
12. transparency carriers according to claim 8, is characterized in that, arrange the 3rd index that can identify described transparency carrier one by one in described frame portion.
13. transparency carriers according to claim 12, is characterized in that, described 3rd index is the intrinsic sequence number of described each transparency carrier.
14. transparency carriers according to claim 1 and 2, is characterized in that, described transparency carrier has non-point-symmetric shape when overlooking.
15. transparency carriers according to claim 1 and 2, is characterized in that, described transparency carrier has the functional membrane covering described multiple optical element further.
16. transparency carriers according to claim 15, is characterized in that, described functional membrane is the optical thin film possessing antireflection, cut off infrared ray, cut off more than at least 1 function in ultraviolet.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-057286 | 2014-03-19 | ||
| JP2014057286A JP6312241B2 (en) | 2014-03-19 | 2014-03-19 | Transparent substrate |
Publications (1)
| Publication Number | Publication Date |
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| CN104932045A true CN104932045A (en) | 2015-09-23 |
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ID=53750566
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520157146.7U Active CN204536580U (en) | 2014-03-19 | 2015-03-19 | Transparency carrier |
| CN201510120728.2A Pending CN104932045A (en) | 2014-03-19 | 2015-03-19 | Transparent substrate |
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| CN201520157146.7U Active CN204536580U (en) | 2014-03-19 | 2015-03-19 | Transparency carrier |
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| JP (1) | JP6312241B2 (en) |
| KR (1) | KR101908541B1 (en) |
| CN (2) | CN204536580U (en) |
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| CN105511201A (en) * | 2016-02-29 | 2016-04-20 | 联想(北京)有限公司 | Camera module and electronic equipment |
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| JP6312241B2 (en) * | 2014-03-19 | 2018-04-18 | Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 | Transparent substrate |
| WO2017071649A1 (en) * | 2015-10-29 | 2017-05-04 | 苏州晶方半导体科技股份有限公司 | Photosensitive chip packaging structure and packaging method thereof |
| TWI597481B (en) * | 2015-12-22 | 2017-09-01 | 閤康生物科技股份有限公司 | Sample collection component and manufacturing method thereof |
| KR101990865B1 (en) * | 2017-01-09 | 2019-06-19 | (주)에이피텍 | Ir filtering apparatus |
| JP2018200980A (en) | 2017-05-29 | 2018-12-20 | ソニーセミコンダクタソリューションズ株式会社 | Imaging apparatus, solid-state imaging device, and electronic equipment |
| CN108254930A (en) * | 2018-03-19 | 2018-07-06 | 谱诉光电科技（苏州）有限公司 | Dispersion light splitting type filtering method and device |
| WO2023002656A1 (en) * | 2021-07-21 | 2023-01-26 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor package |
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| JP2015179788A (en) | 2015-10-08 |
| JP6312241B2 (en) | 2018-04-18 |
| CN204536580U (en) | 2015-08-05 |
| KR101908541B1 (en) | 2018-12-18 |
| KR20150109277A (en) | 2015-10-01 |
| TWI608256B (en) | 2017-12-11 |
| TW201539053A (en) | 2015-10-16 |
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