CN104923504A - Chip cleaning method and device - Google Patents
Chip cleaning method and device Download PDFInfo
- Publication number
- CN104923504A CN104923504A CN201410106301.2A CN201410106301A CN104923504A CN 104923504 A CN104923504 A CN 104923504A CN 201410106301 A CN201410106301 A CN 201410106301A CN 104923504 A CN104923504 A CN 104923504A
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- chip
- introduction part
- cleaning method
- carbon dioxide
- deionized water
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a chip cleaning method and device, and the method at least comprises an atomizing spraying and washing step. In the atomizing spraying and washing step, an atomizing spraying and washing device is used for enabling a cleaning agent to be sprayed on the surface of a chip to be cleaned. The cleaning agent is a gas-liquid mixture containing nitrogen, ammonia gas, carbon dioxide, and deionized water. The water resistance value of mixed liquid of the gas-liquid mixture is from 50 kilohm*cm to 80 kilohm*cm. According to the invention, the carbon dioxide and the ammonia gas are added into the cleaning agent, and are quickly acted in water, thereby generating a large number of positive negative ions: HCO3- and NH4+, enabling the water resistance value of the deionized water to be reduced, and enabling the static electricity of the surface of the chip to be discharged more easily.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of chip cleaning method and device.
Background technology
Along with integrated circuit feature size enters into the deep-submicron stage, the cleanliness factor of chip surface required in IC chip manufacturing process is more and more higher, in order to ensure the cleanliness factor on chip material surface, seek in the manufacturing process of integrated circuit in hundreds of roads cleaning, matting account for 30% of whole manufacture process.
Traditional cleaning way utilizes deionized water rinsing chip, and in this mode, the impurity on chip and pollutant, with very high flow attack chip, wash away, thus reach cleaning performance by deionized water.But the impulsive force of this cleaning method to chip is excessive, easily cause the damage of element pattern, and the utilization rate of the deionized water of this cleaning way is low, causes the wasting of resources.According to statistics, the bulk silicon die of every sheet 200mm diameter, needs consumption 5 tons of high purity deionized water, adds the expense of other various consumptive material in cleaning in whole manufacture, will be a very high numeral.
At present, the method for conventional cleaning chip changes atomizing spraying into, and the cleaning fluid namely ejected is vaporific, and as shown in Figure 1, be prior art chips cleaning schematic diagram, the method mainly utilizes nitrogen to spray water smoke to clean chip 10A.Water is the salt ion conduction by being dissolved in water, and water its water resistance value (resistivity of water) purer is higher, and it is poorer to conduct electricity, and easily produces electrostatic under high speed impact.And chip is mainly the silicon chip of pure silicon substrate and the silicon chip with metal interconnect structure, discharges not in time if produce electrostatic during cleaning between metal interconnect structure, then can cause bridge joint short circuit between metal interconnecting wires, cause chip failure, increase manufacturing cost.
Therefore, when providing a kind of chip cleaning method of improvement and device, those skilled in the art need the problem solved.
Atomizing spraying technique of the prior art only adopts nitrogen and deionized water as cleaning agent, the water resistance value of pure deionized water is greatly about 18 ~ 18.2M Ω about .CM, the deionized water of high like this water resistance value often makes to produce electrostatic in chip in hydro-peening process, cause and be electrically connected between the metal interconnect structure in chip and lost efficacy, cause the loss that cannot retrieve to enterprise.
In order to discharge these electrostatic, the cleaning agent provided in chip cleaning method of the present invention is nitrogen, ammonia, carbon dioxide and deionized water.Wherein, add carbon dioxide and can produce more cation and anion, the chemical equation that carbonoxide dissolves in deionized water is:
, these cations and anion can reduce the water resistance value in deionized water, and the electrostatic in chip is easily discharged, but because the solubility of carbon dioxide in water is very little, be about 1:0.759(volume ratio), therefore, if only add carbon dioxide, the effect of Electro-static Driven Comb is not good.
And ammonia is very easily water-soluble, its reaction equation is:
, after cleaning agent adds ammonia, the anion concentration in deionized water can rise sharply, and whole solution presents alkalescence, the reaction equation right direction of carbon dioxide in gas-liquid mixture is significantly carried out, produces more HCO
3 -, increase the solubility of carbon dioxide further.Comprehensively above-mentioned two reaction equations, can find out, only need the ammonia of trace, ammonia just can react rapidly with carbon dioxide, forms a large amount of negative ions, i.e. HCO
3 -and NH
4 +ion, greatly reduces the water resistance value of deionized water, and the electrostatic surface of chip surface is more easily discharged.
Further, nitrogen and carbon dioxide mix are first formed mist by described atomizing spraying device, ammonia is passed in deionized water simultaneously and form ammoniacal liquor, afterwards the mist of described nitrogen and carbon dioxide and ammoniacal liquor are mixed to form gas-liquid mixture and spray in chip surface to be cleaned.Such technique when ammonia consumption is minimum, can make the dissolving that carbon dioxide reaches maximum.
The concentration range of the described ammoniacal liquor formed is in 0.1 ~ 0.3% scope.The concentration of ammoniacal liquor described in the present embodiment elects 0.2% as temporarily.
Further, after the atomizing spraying step completing chip, also comprise the step of chip surface being cleaned by soft deionized water, the negative ions produced during to remove atomizing spraying, guarantee that chip surface does not have negative ions to remain.The flow of this deionized water can be selected within the scope of 40 ~ 60 liters/min.
As the preferred scheme of one of the present invention, the flow passing into the described nitrogen of atomizing spraying device is selected within the scope of 70 ~ 80 liters/min.
As the preferred scheme of one of the present invention, select within the scope of the flow 0.5 ~ 1.0 liter/min passing into the described carbon dioxide of atomizing spraying device.
As the preferred scheme of one of the present invention, select within the scope of the range of flow 0.1 ~ 0.3 liter/min passing into the described ammonia of atomizing spraying device.
As the preferred scheme of one of the present invention, select within the scope of the range of flow 75 ~ 85 liters/min passing into the described deionized water of atomizing spraying device.
In one embodiment, select the flow of described nitrogen to be 80 liters/min, the flow of described carbon dioxide is 0.5 liter/min; The range of flow of described ammonia is 0.2 liter/min; The flow of described deionized water is 85 liters/min; In described gas-liquid mixture, the water resistance value of mixed liquor is 50K Ω CM.
Exemplarily, under above-mentioned concrete technological parameter condition, test five chips, after atomizing spraying chip, the average electricity of the electrostatic produced in described chip is as shown in the table.
Table 1
| Flow process | Chip-count altogether | The electrostatic mean charge amount (C) produced |
| Existing technique | 5 | -18.8752 |
| Present invention process | 5 | 4.85014 |
As can be seen from the above table, compared with prior art, the electrostatic produced in the chip adopting cleaning process flow of the present invention to clean is released substantially, and stay mean charge amount in the chips significantly to reduce, wafer damage is minimum.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of chip cleaning method and device, causes chip internal to produce the problem of electrostatic for solving atomizing spraying in prior art.
For achieving the above object and other relevant objects, the invention provides a chip cleaning method, described chip cleaning method at least comprises atomizing spraying step, sprays in chip surface to be cleaned in described atomizing spraying step by atomizing spraying device by cleaning agent; Cleaning agent comprises the gas-liquid mixture of nitrogen, ammonia, carbon dioxide and deionized water; In described gas-liquid mixture, the water resistance value of mixed liquor is 50 ~ 80K Ω CM.
As the scheme of a kind of optimization of chip cleaning method of the present invention, the range of flow of described nitrogen is 70 ~ 80 liters/min.
As the scheme of a kind of optimization of chip cleaning method of the present invention, the range of flow of described carbon dioxide is 0.5 ~ 1.0 liter/min.
As the scheme of a kind of optimization of chip cleaning method of the present invention, the range of flow of described ammonia is 0.1 ~ 0.3 liter/min.
As the scheme of a kind of optimization of chip cleaning method of the present invention, the range of flow of described deionized water is 75 ~ 85 liters/min.
As the scheme of a kind of optimization of chip cleaning method of the present invention, first by described atomizing spraying device nitrogen and carbon dioxide mix formation mist, ammonia are passed in deionized water and forms ammoniacal liquor, afterwards described mist and ammoniacal liquor are mixed to form gas-liquid mixture and spray in chip surface to be cleaned.
As the scheme of a kind of optimization of chip cleaning method of the present invention, the concentration range of described ammoniacal liquor is 0.1 ~ 0.3%.
As the scheme of a kind of optimization of chip cleaning method of the present invention, after carrying out atomizing spraying step, also comprise with flow the step of the washed with de-ionized water chip being 40 ~ 60 liters/min.
The present invention also provides a kind of device for cleaning chip, described device for cleaning chip at least comprises atomizing spraying device, described atomizing spraying device comprises nitrogen introduction part, ammonia introduction part, carbon dioxide introduction part and deionized water introduction part, the outlet of the outlet of described nitrogen introduction part, the outlet of ammonia introduction part, carbon dioxide introduction part is communicated with a connection piece with the outlet of deionized water introduction part, and described connector is also provided with nozzle.
As the scheme of a kind of optimization of device for cleaning chip of the present invention, described nitrogen introduction part, carbon dioxide introduction part are communicated with described connector by the first conduit; Described ammonia introduction part, deionized water introduction part are connected with described connector by the second conduit.
As the scheme of a kind of optimization of device for cleaning chip of the present invention, described ammonia introduction part is equiped with valve and flow regulator.
As the scheme of a kind of optimization of device for cleaning chip of the present invention, the scope of the distance of chip to be cleaned described in described nozzle distance is 1 ~ 3cm.
As mentioned above, chip cleaning method of the present invention and device, at least comprise atomizing spraying step, sprays in chip surface to be cleaned in described atomizing spraying step by atomizing spraying device by cleaning agent; Cleaning agent comprises the gas-liquid mixture of nitrogen, ammonia, carbon dioxide and deionized water; In described gas-liquid mixture, the water resistance value of mixed liquor is 50 ~ 80K Ω CM.The present invention passes through in cleaning agent, adding carbon dioxide and ammonia, the negative ions HCO that generation is a large amount of and carbon dioxide and ammonia react rapidly in water
3 -and NH
4 +, the water resistance value of deionized water is reduced, and then the electrostatic of chip surface is more easily discharged.
Accompanying drawing explanation
Fig. 1 is the device for cleaning chip schematic diagram of prior art.
Fig. 2 is device for cleaning chip schematic diagram of the present invention.
Element numbers explanation
100 atomizing spraying devices
1 nitrogen introduction part
2 carbon dioxide introduction part
3 ammonia introduction part
31 valves
32 flow regulators
4 deionized water introduction part
5 first conduits
6 second conduits
7 connectors
8 nozzles
9 gas-liquid mixtures
10,10A chip
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this description can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by detailed description of the invention different in addition, and the every details in this description also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to accompanying drawing.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Embodiment one
The invention provides a kind of chip cleaning method, described chip cleaning method at least comprises atomizing spraying step, sprays in chip surface to be cleaned in described atomizing spraying step by atomizing spraying device by cleaning agent; Cleaning agent comprises the gas-liquid mixture of nitrogen, ammonia, carbon dioxide and deionized water (deionized water, DI); In described gas-liquid mixture, the water resistance value of mixed liquor is 50 ~ 80K Ω CM.Described atomization cleaner as shown in Figure 2.
Particularly, described chip comprises Semiconductor substrate and the device architecture that is made in described Semiconductor substrate and metal interconnect structure.
When using chip cleaning method provided by the invention, first the cleaning agent including nitrogen, ammonia, carbon dioxide and deionized water is passed into in described atomizing spraying device 100 by the entrance of each correspondence, by the shower nozzle 8 of atomizing spraying device 100, mixed gas-liquid mixture 9 is injected in chip 10 surface to be cleaned again, and drive described atomizing spraying device mobile on chip 100 surface, until the whole surface of chip 100 is cleaned fully by mechanical scanner.
Embodiment two
The present invention also provides a kind of device for cleaning chip, for the chip cleaning method of embodiment one, as shown in Figure 2, described device for cleaning chip at least comprises atomizing spraying device 100, described atomizing spraying device 100 comprises nitrogen introduction part 1, ammonia introduction part 3, carbon dioxide introduction part 2 and deionized water introduction part 4, the outlet of described nitrogen introduction part 1, the outlet 3 of ammonia introduction part, the outlet of carbon dioxide introduction part 2 are communicated with a connection piece 7 with the outlet of deionized water introduction part 4, and described connector 7 is also provided with nozzle 8.
Further, described nitrogen introduction part 1, carbon dioxide introduction part 3 are communicated with described connector 7 by the first conduit 5, and the nitrogen passed into and carbon dioxide are introduced into the first conduit 5 to carry out being mixed to form mist.Described nitrogen is as the pressure source of follow-up gas-liquid mixture.
Described ammonia introduction part 3, deionized water introduction part 4 are connected with described connector 7 by the second conduit 6.Preferably, described ammonia introduction part 3 is also equiped with valve 31 and flow regulator 32, the ammonia passed into and deionized water enter the second conduit 6 and carry out being mixed to form ammoniacal liquor, and the concentration range of the described ammoniacal liquor of formation is in 0.1 ~ 0.3% scope.In the present embodiment, the concentration of described ammoniacal liquor elects 0.2% as temporarily.
The admixture of gas exported from the first conduit 5 and the second conduit 6 and ammoniacal liquor, mix further in connector 7, react chemistry.Final under the pressure of nitrogen, liquid sprays from nozzle 8, forms water smoke, thus reaches the object of cleaning chip.
In sum, the invention provides a kind of chip cleaning method and device, described chip cleaning method comprises atomizing spraying step, sprays in chip surface to be cleaned in described atomizing spraying step by atomizing spraying device by cleaning agent; Cleaning agent comprises the gas-liquid mixture of nitrogen, ammonia, carbon dioxide and deionized water; In described gas-liquid mixture, the water resistance value of mixed liquor is 50 ~ 80K Ω CM.The present invention passes through in cleaning agent, adding carbon dioxide and ammonia, the negative ions HCO that generation is a large amount of and carbon dioxide and ammonia react rapidly in water
3 -and NH
4 +, the water resistance value of deionized water is reduced, and then the electrostatic of chip surface is more easily discharged.
So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (12)
1. a chip cleaning method, is characterized in that, described chip cleaning method at least comprises atomizing spraying step, sprays in chip surface to be cleaned in described atomizing spraying step by atomizing spraying device by cleaning agent; Described cleaning agent comprises the gas-liquid mixture of nitrogen, ammonia, carbon dioxide and deionized water; In described gas-liquid mixture, the water resistance value of mixed liquor is 50 ~ 80K Ω CM.
2. chip cleaning method according to claim 1, is characterized in that: the range of flow of described nitrogen is 70 ~ 80 liters/min.
3. chip cleaning method according to claim 1, is characterized in that: the range of flow of described carbon dioxide is 0.5 ~ 1.0 liter/min.
4. chip cleaning method according to claim 1, is characterized in that: the range of flow of described ammonia is 0.1 ~ 0.3 liter/min.
5. chip cleaning method according to claim 1, is characterized in that: the range of flow of described deionized water is 75 ~ 85 liters/min.
6. chip cleaning method according to claim 1, it is characterized in that: first by described atomizing spraying device nitrogen and carbon dioxide mix formation mist, ammonia are passed in deionized water and forms ammoniacal liquor, afterwards described mist and ammoniacal liquor are mixed to form gas-liquid mixture and spray in chip surface to be cleaned.
7. chip cleaning method according to claim 6, is characterized in that: the concentration range of described ammoniacal liquor is 0.1 ~ 0.3%.
8. chip cleaning method according to claim 1, is characterized in that: the step also comprising with flow the washed with de-ionized water chip being 40 ~ 60 liters/min after carrying out atomizing spraying step.
9. the device for cleaning chip of the chip cleaning method as described in any one of claim 1 ~ 8, it is characterized in that, described device for cleaning chip at least comprises atomizing spraying device, described atomizing spraying device comprises nitrogen introduction part, ammonia introduction part, carbon dioxide introduction part and deionized water introduction part, the outlet of the outlet of described nitrogen introduction part, the outlet of ammonia introduction part, carbon dioxide introduction part is communicated with a connection piece with the outlet of deionized water introduction part, and described connector is also provided with nozzle.
10. device for cleaning chip according to claim 9, is characterized in that: described nitrogen introduction part, carbon dioxide introduction part are communicated with described connector by the first conduit; Described ammonia introduction part, deionized water introduction part are connected with described connector by the second conduit.
11. device for cleaning chips according to claim 10, is characterized in that: described ammonia introduction part is equiped with valve and flow regulator.
12. device for cleaning chips according to claim 9, is characterized in that: the scope of the distance of chip to be cleaned described in described nozzle distance is 1 ~ 3cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410106301.2A CN104923504A (en) | 2014-03-20 | 2014-03-20 | Chip cleaning method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410106301.2A CN104923504A (en) | 2014-03-20 | 2014-03-20 | Chip cleaning method and device |
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| Publication Number | Publication Date |
|---|---|
| CN104923504A true CN104923504A (en) | 2015-09-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410106301.2A Pending CN104923504A (en) | 2014-03-20 | 2014-03-20 | Chip cleaning method and device |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112084A (en) * | 2019-05-22 | 2019-08-09 | 长江存储科技有限责任公司 | Semicoductor device washing apparatus |
| CN110687752A (en) * | 2018-07-05 | 2020-01-14 | 上海微电子装备（集团）股份有限公司 | Humid air preparation device, humid air preparation method and photoetching device |
| CN113140445A (en) * | 2021-03-18 | 2021-07-20 | 上海华力集成电路制造有限公司 | Cleaning method after back-end etching |
| CN114247685A (en) * | 2021-12-17 | 2022-03-29 | 张家港声芯电子科技有限公司 | Chip cleaning device and cleaning method |
| CN114669529A (en) * | 2022-03-01 | 2022-06-28 | 安徽科技学院 | Three-fluidization-based bacterial inhibition type fine selection device for fermenting ganoderma lucidum powder |
| CN115055435A (en) * | 2022-07-08 | 2022-09-16 | 南京华易泰电子科技有限公司 | Water jet cleaning system utilizing ultrahigh water pressure and carbon dioxide |
| US11691111B2 (en) * | 2019-04-08 | 2023-07-04 | Mks Instruments, Inc. | Systems and methods for generating a dissolved ammonia solution with reduced dissolved carrier gas and oxygen content |
-
2014
- 2014-03-20 CN CN201410106301.2A patent/CN104923504A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110687752A (en) * | 2018-07-05 | 2020-01-14 | 上海微电子装备（集团）股份有限公司 | Humid air preparation device, humid air preparation method and photoetching device |
| US11691111B2 (en) * | 2019-04-08 | 2023-07-04 | Mks Instruments, Inc. | Systems and methods for generating a dissolved ammonia solution with reduced dissolved carrier gas and oxygen content |
| CN110112084A (en) * | 2019-05-22 | 2019-08-09 | 长江存储科技有限责任公司 | Semicoductor device washing apparatus |
| CN113140445A (en) * | 2021-03-18 | 2021-07-20 | 上海华力集成电路制造有限公司 | Cleaning method after back-end etching |
| CN114247685A (en) * | 2021-12-17 | 2022-03-29 | 张家港声芯电子科技有限公司 | Chip cleaning device and cleaning method |
| CN114247685B (en) * | 2021-12-17 | 2022-12-20 | 张家港声芯电子科技有限公司 | Chip cleaning device and cleaning method |
| CN114669529A (en) * | 2022-03-01 | 2022-06-28 | 安徽科技学院 | Three-fluidization-based bacterial inhibition type fine selection device for fermenting ganoderma lucidum powder |
| CN114669529B (en) * | 2022-03-01 | 2022-11-11 | 安徽科技学院 | Three-fluidization-based bacterial inhibition type fine selection device for fermenting ganoderma lucidum powder |
| CN115055435A (en) * | 2022-07-08 | 2022-09-16 | 南京华易泰电子科技有限公司 | Water jet cleaning system utilizing ultrahigh water pressure and carbon dioxide |
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